CN106929835A - Chemical plating fluid and use its method to SiC particulate Surface coating Ni P - Google Patents
Chemical plating fluid and use its method to SiC particulate Surface coating Ni P Download PDFInfo
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- 238000007747 plating Methods 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000011248 coating agent Substances 0.000 title claims abstract description 22
- 238000000576 coating method Methods 0.000 title claims abstract description 22
- 239000000126 substance Substances 0.000 title claims abstract description 19
- 239000012530 fluid Substances 0.000 title 1
- 239000002245 particle Substances 0.000 claims abstract description 159
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 67
- 230000004913 activation Effects 0.000 claims abstract description 32
- 206010070834 Sensitisation Diseases 0.000 claims abstract description 31
- 230000008313 sensitization Effects 0.000 claims abstract description 31
- 238000007772 electroless plating Methods 0.000 claims abstract description 29
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 24
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910018104 Ni-P Inorganic materials 0.000 claims abstract description 19
- 229910018536 Ni—P Inorganic materials 0.000 claims abstract description 19
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000004310 lactic acid Substances 0.000 claims abstract description 12
- 235000014655 lactic acid Nutrition 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 42
- 238000006243 chemical reaction Methods 0.000 claims description 34
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 29
- 239000008367 deionised water Substances 0.000 claims description 26
- 229910021641 deionized water Inorganic materials 0.000 claims description 26
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 13
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 12
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 12
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 12
- RRIWRJBSCGCBID-UHFFFAOYSA-L nickel sulfate hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-]S([O-])(=O)=O RRIWRJBSCGCBID-UHFFFAOYSA-L 0.000 claims description 12
- 229940116202 nickel sulfate hexahydrate Drugs 0.000 claims description 12
- 239000001509 sodium citrate Substances 0.000 claims description 12
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 12
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 claims description 12
- 229940038773 trisodium citrate Drugs 0.000 claims description 12
- 238000007788 roughening Methods 0.000 claims description 11
- 238000003760 magnetic stirring Methods 0.000 claims description 9
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002244 precipitate Substances 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 239000011780 sodium chloride Substances 0.000 claims description 4
- FWPIDFUJEMBDLS-UHFFFAOYSA-L tin(II) chloride dihydrate Chemical compound O.O.Cl[Sn]Cl FWPIDFUJEMBDLS-UHFFFAOYSA-L 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims description 2
- 238000005554 pickling Methods 0.000 claims description 2
- 229960000935 dehydrated alcohol Drugs 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 8
- 239000007788 liquid Substances 0.000 abstract description 5
- 238000012423 maintenance Methods 0.000 abstract description 3
- 238000013329 compounding Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 94
- 238000001514 detection method Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 238000001035 drying Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910000601 superalloy Inorganic materials 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000004584 weight gain Effects 0.000 description 3
- 235000019786 weight gain Nutrition 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005844 autocatalytic reaction Methods 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001804 chlorine Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000013401 experimental design Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- AQSJGOWTSHOLKH-UHFFFAOYSA-N phosphite(3-) Chemical compound [O-]P([O-])[O-] AQSJGOWTSHOLKH-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/17—Metallic particles coated with metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
本发明涉及一种化学镀液,其用于对SiC颗粒表面包覆Ni‑P,本发明还涉及采用该化学镀液对SiC颗粒表面包覆Ni‑P的方法,其包括如下步骤:1)SiC表面清洁处理;2)SiC颗粒粗化;3)SiC颗粒活化敏化;4)配制化学镀液并施镀;5)化学镀后处理。当化学镀液中[Ni2+]浓度为0.25mol/L、[NH4 +]浓度为0.6mol/L,[Ni2+]/[H2PO2 ‑]浓度之比为0.4、柠檬酸浓度为0.1mol/L,以及痕量的乳酸和硫脲时SiC表面包裹效果最好。本发明通过化学镀镍溶液对SiC颗粒实施全面包覆镍,解决了SiC颗粒低润湿性,难与金属液复合的问题,且该化学镀液维护成本低,使用寿命长。
The present invention relates to a kind of electroless plating liquid, and it is used for coating Ni-P to the surface of SiC particle, and the present invention also relates to adopting this electroless plating liquid to the method for SiC particle surface coating Ni-P, and it comprises the following steps: 1) SiC surface cleaning treatment; 2) coarsening of SiC particles; 3) activation and sensitization of SiC particles; 4) preparation of chemical plating solution and plating; 5) post-chemical plating treatment. When the concentration of [Ni 2+ ] in the electroless plating solution is 0.25mol/L, the concentration of [NH 4 + ] is 0.6mol/L, the ratio of the concentration of [Ni 2+ ]/[H 2 PO 2 ‑ ] is 0.4, citric acid The SiC surface wrapping effect is the best when the concentration is 0.1mol/L, and trace amounts of lactic acid and thiourea. The invention fully coats SiC particles with nickel by electroless nickel plating solution, which solves the problems of low wettability of SiC particles and difficulty in compounding with metal liquid, and the chemical plating solution has low maintenance cost and long service life.
Description
技术领域technical field
本发明属于微米粒子表面处理技术领域,具体涉及一种化学镀液,其用于对SiC颗粒表面包覆Ni-P,本发明还涉及采用该化学镀液对SiC颗粒表面包覆Ni-P的方法及由此获得的SiC颗粒。The invention belongs to the technical field of surface treatment of micron particles, and in particular relates to an electroless plating solution for coating Ni-P on the surface of SiC particles. Method and SiC particles obtained therefrom.
背景技术Background technique
传统高温合金要求有大的晶粒尺寸甚至单晶,这是因为合金材料的晶粒越小,晶界面积越大,原子扩散越容易,所以在高温和应力的作用下通过晶粒的倾转和变形发生塑性变形,从而使合金材料蠕变速度加快,缩短了其高温持久性。而分布在晶界的高熔点的陶瓷颗粒有明显的晶界钉扎作用,使金属原子沿晶界扩散速度大大降低,同时晶界对位错的移动起到有效的阻碍作用,提高了合金材料的高温屈服应力,故相比于传统粗晶高温合金材料具有更好的高温强度,稳定性和持久性能。因此,提出了将大尺寸晶粒与陶瓷颗粒的优点结合到高温合金中。Traditional superalloys require a large grain size or even a single crystal. This is because the smaller the grain size of the alloy material, the larger the grain boundary area, and the easier the diffusion of atoms. Therefore, under the action of high temperature and stress, through the tilting of the grain Plastic deformation occurs with deformation, which accelerates the creep rate of the alloy material and shortens its high temperature durability. The ceramic particles with high melting point distributed in the grain boundary have obvious grain boundary pinning effect, which greatly reduces the diffusion speed of metal atoms along the grain boundary. At the same time, the grain boundary effectively hinders the movement of dislocations, improving the alloy material Compared with traditional coarse-grained superalloy materials, it has better high-temperature strength, stability and durability. Therefore, it has been proposed to combine the advantages of large-sized grains with ceramic particles into superalloys.
然而,陶瓷颗粒和金属材料之间的润湿性不好,为解决这一问题,通常采取对陶瓷颗粒表面沉积镍层的方法。目前,在陶瓷颗粒表面沉积金属有电镀和化学镀两种主要方法,其中电镀需要外加直流电源设备,成本较高,化学镀镍则不需要外加直流电源设备,是一种优良的表面处理技术,在很多工业部门都得到了一定范围的应用。However, the wettability between ceramic particles and metal materials is not good. In order to solve this problem, a method of depositing a nickel layer on the surface of ceramic particles is usually adopted. At present, there are two main methods of depositing metal on the surface of ceramic particles, electroplating and electroless plating. Among them, electroplating requires an external DC power supply, which is expensive, while electroless nickel plating does not require an external DC power supply. It is an excellent surface treatment technology. It has been used in a certain range in many industrial sectors.
具体地,化学镀法是指利用金属盐溶液在还原剂的作用下使金属离子还原成金属,在具有催化表面的镀件上获得金属沉积层的方法。化学镀镍具有非常好的均镀能力,结合力高,工艺简单,成本低廉,能对非导电基体进行金属化处理,而且化学镀镍层具有硬度高、耐磨、耐腐蚀等性能。金属包覆型陶瓷颗粒是指在陶瓷颗粒表面包覆一层异相金属构成的复合陶瓷颗粒,兼有包覆层金属和芯核陶瓷的优良性能,可将金属材料的强韧性、易加工性等特点和陶瓷材料的耐高温、耐磨损和耐腐蚀等性能结合起来。Specifically, the electroless plating method refers to the method of using a metal salt solution to reduce metal ions to metal under the action of a reducing agent to obtain a metal deposition layer on a plated piece with a catalytic surface. Electroless nickel plating has very good throwing ability, high binding force, simple process, low cost, and can metallize non-conductive substrates, and the electroless nickel plating layer has high hardness, wear resistance, corrosion resistance and other properties. Metal-coated ceramic particles refer to composite ceramic particles composed of a layer of heterogeneous metal coated on the surface of ceramic particles, which combines the excellent properties of the coating metal and core ceramics, and can combine the strength, toughness, and ease of processing of metal materials. and other characteristics combined with the high temperature resistance, wear resistance and corrosion resistance of ceramic materials.
在化学镀Ni-P合金的沉积机理方面有四种假说,即原子氢理论、氢化物传输理论、电化学理论及轻基一镍离子配位理论。其中认可度比较高的是原子氢理论,根据该理论,在化学镀Ni-P合金过程中,发生如下过程:There are four hypotheses on the deposition mechanism of electroless Ni-P alloys, namely atomic hydrogen theory, hydride transport theory, electrochemical theory and light base-nickel ion coordination theory. Among them, the theory of atomic hydrogen is highly recognized. According to this theory, in the process of electroless Ni-P alloy plating, the following process occurs:
第一步:溶液中的次磷酸根在溶液中脱氢生成亚磷酸根离子,同时放出初生态的原子氢,初生态原子氢吸附在催化表面从而使之活化,镀液中的阳离子镍被还原,并在催化表面上沉积出金属镍,其反应式如下:The first step: the hypophosphite in the solution is dehydrogenated in the solution to generate phosphite ion, and at the same time, the nascent atomic hydrogen is released. The nascent atomic hydrogen is adsorbed on the catalytic surface to activate it, and the cationic nickel in the plating solution is reduced. , and deposit metallic nickel on the catalytic surface, the reaction formula is as follows:
H2PO2 -+H2O→HPO3 2-+2H++[H]- H 2 PO 2 - +H 2 O→HPO 3 2- +2H + +[H] -
Ni2++2[H]-→Ni+H2↑(析氢反应)。Ni 2+ +2[H] - →Ni+H 2 ↑ (hydrogen evolution reaction).
第二步:部分次磷酸根被氢化物还原成单质磷,同时进入镀层,其反应式如下:Step 2: Part of the hypophosphite is reduced to elemental phosphorus by the hydride and enters the coating at the same time. The reaction formula is as follows:
2H2PO2 -+6[H]-+4H2O→2P+8OH-+5H2↑。2H 2 PO 2 - +6[H] - +4H 2 O→2P+8OH - +5H 2 ↑.
但是,化学镀镍溶液与电镀溶液相比存在如下问题:条件要求精准度更高,各项化学成分的平衡、工艺参数的可操作范围比较狭窄;对于污染物的耐受能力比较差,甚至ppm级的重金属离子就可能造成镀层性能恶化或漏镀、停镀;考虑到化学镀液的寿命,比较电镀液而言,化学镀镍的混合溶液的稳定性很差,还需要对溶液进行维护和调整的工作,比较麻烦。之所以会有这种问题,主要是因为化学镀镍无外力启动和帮助克服任何表面缺陷,反应是靠表面条件启动的,即异相表面自催化反应,与此不同,电镀则由外界提供电力来驱动反应的进行。However, compared with the electroplating solution, the electroless nickel plating solution has the following problems: the conditions require higher precision, the balance of various chemical components, and the operable range of the process parameters are relatively narrow; the tolerance to pollutants is relatively poor, even ppm Level of heavy metal ions may cause coating performance deterioration or missing plating, stop plating; Considering the life of the electroless plating solution, compared with the electroplating solution, the stability of the mixed solution of electroless nickel plating is very poor, and the solution needs to be maintained and repaired. The adjustment work is more troublesome. This problem arises mainly because electroless nickel has no external force to initiate and help overcome any surface defects, the reaction is initiated by the surface conditions, i.e. heterogeneous surface autocatalytic reaction, unlike electroplating, which is powered by the outside world to drive the reaction.
发明内容Contents of the invention
鉴于此,本发明的发明人希望提供一种新化学镀液,其使用过程中的无需复杂的维护工艺且使用寿命长,另外,本发明的发明人还旨在提供一种对SiC颗粒表面进行活化和敏化预处理的活化敏化液,以解决SiC颗粒低润湿性,难于与金属液复合的问题,并实现对SiC颗粒全面包覆镍-磷。In view of this, the inventor of the present invention wishes to provide a kind of new electroless plating solution, does not need complex maintenance technology and long service life in its use process, in addition, the inventor of the present invention also aims to provide a kind of SiC particle surface Activation and sensitization pretreatment activation and sensitization solution to solve the problem of low wettability of SiC particles and difficulty in compounding with metal liquid, and to achieve full coating of SiC particles with nickel-phosphorus.
为实现上述发明目的,本发明采用如下技术方案:In order to realize the above-mentioned purpose of the invention, the present invention adopts following technical scheme:
根据本发明的一个具体实施方式,提供了一种化学镀液,其用于对SiC颗粒进行Ni-P的表面包覆,其包含以下成分:六水合硫酸镍、次亚磷酸钠、硫酸铵、柠檬酸三钠、以及乳酸和硫脲。According to a specific embodiment of the present invention, an electroless plating solution is provided, which is used to coat the surface of SiC particles with Ni-P, which includes the following components: nickel sulfate hexahydrate, sodium hypophosphite, ammonium sulfate, Trisodium Citrate, as well as Lactic Acid and Thiourea.
根据本发明的一个实施例的化学镀液,其中,所述六水合硫酸镍浓度为0.05-0.25mol/L,所述次亚磷酸钠的浓度为0.08-1.25mol/L,所述硫酸铵浓度为0.5-0.9mol/L,所述柠檬酸三钠的含量为0.1-0.5mol/L,所述乳酸和硫脲为痕量。The electroless plating solution according to an embodiment of the present invention, wherein, the concentration of the nickel sulfate hexahydrate is 0.05-0.25mol/L, the concentration of the sodium hypophosphite is 0.08-1.25mol/L, and the concentration of the ammonium sulfate 0.5-0.9 mol/L, the content of the trisodium citrate is 0.1-0.5 mol/L, and the lactic acid and thiourea are trace amounts.
根据本发明的一个实施例的化学镀液,其中,调节所述化学镀液的pH为8-10,温度为30-50摄氏度。The electroless plating solution according to an embodiment of the present invention, wherein the pH of the electroless plating solution is adjusted to be 8-10, and the temperature is 30-50 degrees Celsius.
根据本发明的一个实施例的化学镀液,其中,所述六水合硫酸镍浓度为0.25mol/L,所述次亚磷酸钠的浓度为0.625mol/L,所述硫酸铵浓度为0.6mol/L,所述柠檬酸三钠的含量为0.1mol/L。The electroless plating solution according to an embodiment of the present invention, wherein, the concentration of the nickel sulfate hexahydrate is 0.25mol/L, the concentration of the sodium hypophosphite is 0.625mol/L, and the concentration of the ammonium sulfate is 0.6mol/L L, the content of the trisodium citrate is 0.1mol/L.
根据本发明的一个实施例无活化敏化预处理,其中,所述的活化敏化过程不实施,作为对比实例,证明活化敏化液的良好效果。According to an embodiment of the present invention, there is no activation sensitization pretreatment, wherein the activation sensitization process is not implemented, as a comparative example, it proves the good effect of the activation sensitization solution.
根据本发明的一个具体实施方式,提供了一种采用如上所述的任一化学镀液对SiC颗粒表面包覆Ni-P的方法,其包括如下步骤。According to a specific embodiment of the present invention, there is provided a method for coating the surface of SiC particles with Ni-P by using any one of the above-mentioned electroless plating solutions, which includes the following steps.
步骤一:SiC颗粒清洁处理Step 1: SiC particle cleaning treatment
对SiC颗粒清洗依次进行无水乙醇、NaOH溶液和盐酸溶液超声清洗,然后用去离子水清洗SiC颗粒至中性,过滤烘干后得到经预处理的SiC颗粒。The SiC particles were cleaned by ultrasonic cleaning with anhydrous ethanol, NaOH solution and hydrochloric acid solution in sequence, and then the SiC particles were cleaned with deionized water to neutrality, and the pretreated SiC particles were obtained after filtration and drying.
步骤二:SiC颗粒粗化处理Step 2: Coarsening treatment of SiC particles
将经所述步骤一处理所得的SiC颗粒放入到粗化液中,并施加磁力搅拌,得到粗化后的SiC颗粒。Put the SiC particles obtained through the treatment in the first step into the roughening solution, and apply magnetic stirring to obtain the roughened SiC particles.
步骤三:SiC颗粒活化敏化处理Step 3: SiC particle activation and sensitization treatment
将通过所述步骤二所得的粗化后的SiC颗粒置于活化敏化液中,并将反应体系置于30-40℃水浴槽中,施加超声波作用,之后静置、沉淀、去离子水洗涤并过滤烘干,得到活化敏化的SiC颗粒。Place the coarsened SiC particles obtained in step 2 in the activation and sensitization solution, place the reaction system in a water bath at 30-40°C, apply ultrasonic waves, and then let stand, precipitate, and wash with deionized water and filtered and dried to obtain activated and sensitized SiC particles.
步骤四:对SiC颗粒进行化学施镀Step 4: Electroless plating of SiC particles
将经所述步骤三活化敏化的SiC颗粒5g加入到250mL根据权利要求1~4的任一项所述的化学镀液中,将反应体系置于水浴槽中30-50℃恒温水浴,并施加磁力搅拌。Add 5 g of SiC particles activated and sensitized by step three into 250 mL of the electroless plating solution according to any one of claims 1 to 4, place the reaction system in a water bath at a constant temperature of 30-50 °C, and Apply magnetic stirring.
5)后续处理5) Subsequent processing
将所述步骤四处理的反应液静置沉淀、过滤,置于80-90℃下烘干10h以上,得到表面被镍包覆的SiC颗粒。The reaction solution treated in the step 4 is left to settle, filtered, and dried at 80-90° C. for more than 10 hours to obtain SiC particles whose surface is coated with nickel.
根据本发明的一个实施例的对SiC颗粒表面包覆Ni-P的方法,其中,在所述步骤一中,所述无水乙醇的超声清洗时间为5-10min;所述NaOH溶液为5质量%的NaOH溶液,超声清洗5-10min;所述盐酸为37质量%的纯盐酸溶液,超声清洗5-10min,将碱洗和酸洗处理之后的所述SiC颗粒沉淀并过滤后再用去离子水清洗至SiC颗粒呈中性,之后沉淀得SiC颗粒,将所述SiC颗粒置于80-90℃下烘干10h以上。The method for coating Ni-P on the surface of SiC particles according to an embodiment of the present invention, wherein, in the first step, the ultrasonic cleaning time of the absolute ethanol is 5-10min; the NaOH solution is 5 mass % NaOH solution, ultrasonic cleaning for 5-10min; the hydrochloric acid is 37% by mass of pure hydrochloric acid solution, ultrasonic cleaning for 5-10min, the SiC particles after alkali washing and acid washing are precipitated and filtered before deionized Washing with water until the SiC particles are neutral, and then precipitating to obtain SiC particles, and drying the SiC particles at 80-90° C. for more than 10 hours.
根据本发明的一个实施例的对SiC颗粒表面包覆Ni-P的方法,其中,在所述步骤二中,所述粗化液为将37质量%的纯盐酸和去离子水以体积比1:1配制而成,所述磁力搅拌时间为20min,搅拌结束后,将反应液静置、沉淀并过滤得到SiC颗粒,用去离子水清洗过滤所得SiC颗粒3次,得到粗化的SiC颗粒。The method for coating Ni-P on the surface of SiC particles according to an embodiment of the present invention, wherein, in the second step, the roughening solution is 37% by mass of pure hydrochloric acid and deionized water in a volume ratio of 1 :1 prepared, the magnetic stirring time is 20min, after the stirring is completed, the reaction solution is left to stand, precipitated and filtered to obtain SiC particles, and the obtained SiC particles are washed and filtered with deionized water for 3 times to obtain coarse SiC particles.
根据本发明的一个实施例的对SiC颗粒表面包覆Ni-P的方法,其中,在所述步骤二中,对应于所述粗化液300mL添加的SiC颗粒为10-40g。According to the method of coating Ni-P on the surface of SiC particles according to an embodiment of the present invention, in the second step, 10-40 g of SiC particles are added corresponding to 300 mL of the roughening solution.
根据本发明的一个实施例的对SiC颗粒表面包覆Ni-P的方法,其中,在所述步骤三中,所述超声波的作用时间为20min,反应结束后,将反应液静置、沉淀、并过滤,用去离子水对过滤所得的SiC颗粒清洗3次,将清洗之后的SiC颗粒置于80-90℃下烘干10h以上,得到活化的SiC颗粒。According to the method of coating Ni-P on the surface of SiC particles according to an embodiment of the present invention, in the step 3, the action time of the ultrasonic wave is 20 minutes, and after the reaction is completed, the reaction solution is left to stand, precipitated, and filtered, and the filtered SiC particles were washed three times with deionized water, and the cleaned SiC particles were dried at 80-90° C. for more than 10 hours to obtain activated SiC particles.
根据本发明的一个实施例的对SiC颗粒表面包覆Ni-P的方法,其中,所述活化敏化液由以下组成:According to a method of coating Ni-P on the surface of SiC particles according to an embodiment of the present invention, the activation sensitization solution consists of the following:
二氯化钯0.5g/L,二水合氯化亚锡30g/L,氯化钠160g/L,37质量%HCl 60mL/L。Palladium dichloride 0.5g/L, stannous chloride dihydrate 30g/L, sodium chloride 160g/L, 37% by mass HCl 60mL/L.
通过以上技术方案,本发明主要取得了如下技术效果:Through the above technical solutions, the present invention mainly achieves the following technical effects:
(1)与电镀相比,不需要外加直流电源设备,所得镀层致密,孔隙少;可实现在金属、非金属、半导体等各种不同基材上镀覆;可以通过在脆性的陶瓷中引入分布均匀的金属相以提高其断裂韧性;均镀能力强,可以使包覆后的粉体的金属相相互联成网状。(1) Compared with electroplating, no external DC power supply equipment is required, and the resulting coating is dense and has less pores; it can be plated on various substrates such as metals, non-metals, and semiconductors; it can be distributed by introducing distribution into brittle ceramics. Uniform metal phase to improve its fracture toughness; strong throwing ability, which can make the metal phase of the coated powder interconnected into a network.
(2)与其他化学镀法相比,本工艺具有以下优点:1)对SiC表面处理采用活化敏化一步法,与目前广泛采用的活化敏化两步法相比步骤简化。传统的敏化活化两步法处理后,残余在粉体中的亚锡离子很难除去,常常给粉体的性能带来不利的影响,其工艺繁琐,操作复杂,维护困难。与此不同,本发明的活化敏化一步法成本低,原料配制容易,同时,在活化敏化液中包含氯盐(NaCl为例)作为液稳定剂;2)传统工艺忽略了选用的镀液成分在水解的过程中产生的氢离子和氢氧根离子对镀液的pH造成的影响,而且对于化学镀液的组成表述不一,本工艺充分针对于在碱性低温的条件下对SiC表面化学镀Ni-P时化学镀液的各个成分的选择,针对性强。(2) Compared with other electroless plating methods, this process has the following advantages: 1) The one-step activation and sensitization method is adopted for SiC surface treatment, which is simplified compared with the two-step activation and sensitization method widely used at present. After the traditional two-step process of sensitization and activation, it is difficult to remove the stannous ions remaining in the powder, which often has an adverse effect on the performance of the powder. The process is cumbersome, the operation is complicated, and the maintenance is difficult. Different from this, the activation and sensitization one-step method of the present invention has low cost and is easy to prepare raw materials. At the same time, the activation and sensitization solution contains chlorine salt (NaCl is an example) as a liquid stabilizer; 2) the traditional process ignores the selected plating solution The influence of hydrogen ions and hydroxide ions generated during the hydrolysis of the components on the pH of the plating solution, and the composition of the chemical plating solution is different. This process is fully aimed at the SiC surface under the condition of alkaline low temperature. The selection of each component of the electroless plating solution during electroless Ni-P plating is highly targeted.
附图说明Description of drawings
图1(a)和图1(b)分别是粗化后的SiC颗粒的SEM照片和EDS分析结果;Figure 1(a) and Figure 1(b) are the SEM photos and EDS analysis results of the roughened SiC particles, respectively;
图2(a)和图2(b)分别是活化敏化后的SiC颗粒的SEM照片和EDS分析;Figure 2(a) and Figure 2(b) are the SEM photos and EDS analysis of the activated and sensitized SiC particles, respectively;
图3是各组实验的增重百分率变化;Fig. 3 is the weight gain percentage change of each group of experiments;
图4是实施例1中所得SiC颗粒的SEM照片;Fig. 4 is the SEM photograph of SiC particle obtained in embodiment 1;
图5是随机选取实施例1中所得的SiC的颗粒的EDS的检测结果;Fig. 5 is the detection result of the EDS of the particle that randomly selects SiC obtained in embodiment 1;
图6是实施例2中所得的SiC颗粒的SEM照片;Fig. 6 is the SEM photograph of the SiC particle obtained in embodiment 2;
图7是随机选取实施例2中所得的SiC颗粒的EDS检测结果;Fig. 7 is the EDS detection result of randomly selecting SiC particles obtained in Example 2;
图8是实施例3中所得的SiC颗粒SEM照片;Fig. 8 is the SEM photograph of the SiC particle obtained in embodiment 3;
图9是随机选取实施例3中所得的SiC颗粒的EDS检测结果;Fig. 9 is the EDS detection result of randomly selecting SiC particles obtained in Example 3;
图10是比较例3中所得的SiC颗粒SEM照片;Fig. 10 is the SEM photo of the SiC particles obtained in Comparative Example 3;
图11是随机选取比较例3中所得的SiC颗粒的EDS检测结果。FIG. 11 is the EDS detection result of randomly selected SiC particles obtained in Comparative Example 3.
具体实施方式detailed description
为了使本发明的目的、技术方案及优点更加清楚明白,下面结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本发明,并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
本发明中对SiC颗粒表面包覆Ni-P的具体实施步骤包括SiC颗粒的清洁处理、SiC颗粒的粗化处理、SiC颗粒的活化敏化处理、及化学施镀和化学施镀后处理。The specific implementation steps of coating Ni-P on the surface of SiC particles in the present invention include cleaning treatment of SiC particles, roughening treatment of SiC particles, activation and sensitization treatment of SiC particles, chemical plating and post-chemical plating treatment.
1)SiC颗粒的清洁处理1) Cleaning treatment of SiC particles
采用酸洗+碱洗对原始SiC颗粒清洗去油除污,然后用去离子水清洗SiC颗粒至中性,过滤烘干后得到预处理过的SiC颗粒,具体过程如下:Use pickling + alkali washing to clean the original SiC particles to remove oil and dirt, then wash the SiC particles with deionized water to neutrality, filter and dry to obtain pretreated SiC particles, the specific process is as follows:
取定量SiC颗粒,置于无水乙醇中超声清洗5min,过滤之后置于5质量%的NaOH溶液中超声清洗5min,过滤,置于37质量%的纯盐酸溶液中超声清洗5min,过滤,用去离子水清洗至中性,置于鼓风干燥箱中,80℃下烘干备用;Quantitative SiC particles were taken, placed in absolute ethanol for ultrasonic cleaning for 5 min, filtered, placed in 5 mass % NaOH solution for ultrasonic cleaning for 5 min, filtered, placed in 37 mass % pure hydrochloric acid solution for ultrasonic cleaning for 5 min, filtered, and used Wash with ionized water until neutral, place in a blast drying oven, and dry at 80°C for later use;
2)SiC颗粒的粗化处理2) Coarsening treatment of SiC particles
采用盐酸和去离子水配成粗化液,再将经清洁处理的SiC粉体10-40g放入到300mL粗化液中磁力搅拌,得到粗化后的SiC颗粒,其具体过程如下:Use hydrochloric acid and deionized water to make a roughening solution, then put 10-40g of cleaned SiC powder into 300mL roughening solution and magnetically stir to obtain roughened SiC particles. The specific process is as follows:
取20g清洁处理之后的SiC颗粒,置于37质量%的纯盐酸和去离子水按体积比1:1制备而成的300mL粗化液中;在磁力搅拌下反应20nin,待反应结束后,静置,沉淀过滤,置于鼓风干燥箱中80℃,10h烘干待用;图1(a)和图1(b)分别是粗化后的SiC颗粒SEM照片和EDS分析,表1则是粗化后的SiC颗粒的EDS分析结果,从粗化之后的图片可以看出,SiC颗粒表面比较光滑。Take 20g of SiC particles after cleaning treatment, put them in 300mL roughening solution prepared by 37% by mass of pure hydrochloric acid and deionized water at a volume ratio of 1:1; place, precipitate and filter, place in a blast drying oven at 80°C, and dry for 10 hours for use; Figure 1(a) and Figure 1(b) are the SEM photos and EDS analysis of SiC particles after coarsening, and Table 1 is The EDS analysis results of the roughened SiC particles show that the surface of the SiC particles is relatively smooth from the picture after roughening.
表1:粗化后的SiC颗粒的EDS分析结果Table 1: EDS analysis results of coarsened SiC particles
3)SiC颗粒的活化敏化处理3) Activation and sensitization treatment of SiC particles
采用活化敏化一步法对粗化后的SiC颗粒进行活化敏化。The roughened SiC particles were activated and sensitized by one-step activation and sensitization method.
配制活化敏化具体过程为:将0.25g PdCl2加入到30mL的37质量%的HCl溶液中,用去离子水定容至50mL左右得到溶液A;再将80g NaCl溶于250mL去离子水中,得到溶液B;再将溶液A与B混合,用玻璃棒搅拌5min,得到溶液C;再将15g SnCl2·2H2O溶于150mL的去离子水中,得到溶液D;再把溶液D一边搅拌一边加入到溶液C中,得到深绿色的溶液E;最后加入去离子水,用容量瓶定容到500mL,即得到深绿色的活化液。取清洁和粗化后的SiC颗粒置于该活化敏化液中,添加量为20-40g/L,并将反应体系置于30-40℃水浴槽中,加以超声波作用20min,反应结束后,将反应液静置、沉淀、用去离子水清洗3次,过滤后,置于烘箱中在80-90℃烘干10h以上,得到活化敏化的SiC颗粒。 The specific process of preparing activation and sensitization is as follows: 0.25g PdCl is added to 30mL of 37 mass% HCl solution, and the volume is adjusted to about 50mL with deionized water to obtain solution A; then 80g NaCl is dissolved in 250mL deionized water to obtain Solution B; then mix solution A and B, and stir with a glass rod for 5 minutes to obtain solution C; then dissolve 15g SnCl 2 ·2H 2 O in 150mL deionized water to obtain solution D; then add solution D while stirring Add solution C to obtain dark green solution E; finally add deionized water and use a volumetric flask to set the volume to 500mL to obtain a dark green activation solution. Take the cleaned and coarsened SiC particles and place them in the activation sensitization solution, the addition amount is 20-40g/L, and put the reaction system in a water bath at 30-40°C, and apply ultrasonic waves for 20min. After the reaction, The reaction solution was left to stand, precipitated, washed three times with deionized water, filtered, and dried in an oven at 80-90° C. for more than 10 hours to obtain activated and sensitized SiC particles.
图2(a)和图2(b)分别是活化敏化后的SiC颗粒SEM照片和EDS分析,表2是活化敏化后的SiC颗粒的EDS分析结果,从图2可见,SiC颗粒表面比较粗糙,同时含有钯离子,其具体各元素含量参见表2。Figure 2(a) and Figure 2(b) are the SEM photos and EDS analysis of SiC particles after activation and sensitization, respectively. Table 2 is the EDS analysis results of SiC particles after activation and sensitization. As can be seen from Figure 2, the SiC particle surface comparison It is rough and contains palladium ions at the same time. See Table 2 for the specific content of each element.
表2:活化敏化后的SiC颗粒的EDS分析结果Table 2: EDS analysis results of SiC particles after activation and sensitization
4)化学施镀4) Chemical plating
配置化学镀液:配置六水合硫酸镍浓度为0.05-0.25mol/L,次亚磷酸钠浓度为0.08-1.25mol/L,硫酸铵浓度为0.5-0.9mol/L,柠檬酸三钠的含量为0.1-0.5mol/L,以及痕量的乳酸和硫脲,用去离子水定容至250mL溶液,然后将溶液pH调整至8-10,将经活化敏化处理的SiC颗粒5g置于化学镀液250mL中,将反应体系置于水浴槽中30-50℃恒温水浴,加以磁力搅拌60min,得到施镀后的反应液。Configure the chemical plating solution: configure the concentration of nickel sulfate hexahydrate to be 0.05-0.25mol/L, the concentration of sodium hypophosphite to be 0.08-1.25mol/L, the concentration of ammonium sulfate to be 0.5-0.9mol/L, and the content of trisodium citrate to be 0.1-0.5mol/L, and traces of lactic acid and thiourea, dilute to 250mL solution with deionized water, then adjust the pH of the solution to 8-10, and place 5g of SiC particles that have been activated and sensitized in the electroless plating Place the reaction system in a water bath with a constant temperature of 30-50°C in 250 mL of liquid solution, and stir it magnetically for 60 minutes to obtain a reaction solution after plating.
为了具体地用正交试验讨论各个组成的含量,选用选取6个因素:[Ni2+]浓度、[Ni2 +]/[H2PO2 -]浓度、[NH4 +]浓度、柠檬酸浓度、pH、温度,试验水平选择5个水平,设计正交试验设计表,如下表3所示。In order to specifically discuss the content of each component with an orthogonal test, select 6 factors: [Ni 2+ ] concentration, [Ni 2 + ]/[H 2 PO 2 - ] concentration, [NH 4 + ] concentration, citric acid Concentration, pH, temperature, and test level select 5 levels, and design an orthogonal test design table, as shown in Table 3 below.
表3:化学施镀的正交试验设计表Table 3: Orthogonal Experimental Design Table for Electroless Plating
设计正交试验25个,以化学镀前后增重百分率m%=(m-mo)/mo(m表示施镀后SiC粉体的重量,mo表示原始SiC加入的重量,5.0000g)对SiC颗粒表面镀Ni-P程度的程度进行了评价,其结果如图3所示的各组实验的增重百分率变化。Design 25 orthogonal experiments, the percentage of weight gain before and after electroless plating m%=(mm o )/m o (m represents the weight of SiC powder after plating, m o represents the weight of original SiC added, 5.0000g) to SiC The degree of Ni-P plating on the particle surface was evaluated, and the results are shown in Fig. 3 as the weight gain percentage change of each group of experiments.
实施例1(正交实验20)Embodiment 1 (orthogonal experiment 20)
配置化学镀液250mL,该化学镀液具体成分为六水合硫酸镍浓度为0.20mol/L,次亚磷酸钠的浓度为0.333mol/L,硫酸铵浓度为0.7mol/L,柠檬酸三钠的含量为0.1mol/L,以及痕量的乳酸和硫脲,用去离子水定容至250mL溶液。Configure chemical plating solution 250mL, the specific composition of this chemical plating solution is that the concentration of nickel sulfate hexahydrate is 0.20mol/L, the concentration of sodium hypophosphite is 0.333mol/L, the concentration of ammonium sulfate is 0.7mol/L, and the concentration of trisodium citrate is 0.20mol/L. The content is 0.1mol/L, and traces of lactic acid and thiourea, and dilute to 250mL solution with deionized water.
取活化敏化后的SiC颗粒5g置于该镀液中(由此,镀液中SiC颗粒的含量为20g/L),调节溶液pH至9.5,将反应体系置于水浴槽中40℃恒温水浴,磁力搅拌下反应60min,待反应结束后,将镀液静置沉淀,过滤,置于鼓风干燥箱中80℃,10h烘干,得到镍包覆的SiC颗粒;图4是实施例1中镀后的SiC颗粒SEM照片,镀后的SiC颗粒表面均匀分布有点状镍颗粒,也不能实现其对SiC颗粒的完全包覆,从图2中可以看出颗粒表面有大部分裸露。Take 5 g of activated and sensitized SiC particles and place them in the plating solution (thus, the content of SiC particles in the plating solution is 20 g/L), adjust the pH of the solution to 9.5, and place the reaction system in a water bath at a constant temperature of 40°C. , and reacted under magnetic stirring for 60 minutes. After the reaction was completed, the plating solution was left to settle, filtered, placed in a blast drying oven at 80°C, and dried for 10 hours to obtain nickel-coated SiC particles; The SEM photo of the SiC particles after plating shows that the surface of the SiC particles after plating is evenly distributed with point-shaped nickel particles, and it cannot completely cover the SiC particles. It can be seen from Figure 2 that most of the particle surfaces are exposed.
对实施例1得到的镍包覆的SiC颗粒在扫描电镜500×倍下随机选取进行能谱检测,图5和表4是实施例1施镀后的SiC颗粒的EDS检测结果,其中,除C、Si之外,有质量分数为1.36%的P存在,质量分数为34.00%的镍附着于颗粒表面。The nickel-coated SiC particles obtained in Example 1 were randomly selected under a scanning electron microscope at a magnification of 500× for energy spectrum detection. Figure 5 and Table 4 are the EDS detection results of the SiC particles after plating in Example 1, wherein, except for C , Si, P with a mass fraction of 1.36% exists, and Ni with a mass fraction of 34.00% is attached to the particle surface.
表4:实施例1施镀后的SiC颗粒的EDS检测结果Table 4: EDS detection results of SiC particles after plating in Example 1
实施例2(正交实验16)Embodiment 2 (orthogonal experiment 16)
配置化学镀液250mL,该化学镀液成分为六水合硫酸镍浓度为0.20mol/L,次亚磷酸钠的浓度为1.0mol/L,硫酸铵浓度为0.8mol/L,柠檬酸三钠的含量为0.2mol/L,以及痕量的乳酸和硫脲,用去离子水定容至250mL溶液。Configure 250mL of chemical plating solution, the composition of which is 0.20mol/L of nickel sulfate hexahydrate, 1.0mol/L of sodium hypophosphite, 0.8mol/L of ammonium sulfate, and 0.8mol/L of trisodium citrate. 0.2mol/L, and traces of lactic acid and thiourea, dilute to 250mL solution with deionized water.
取活化敏化后的SiC颗粒5g置于配制好的镀液中(由此,镀液中SiC颗粒的含量为20g/L),调节溶液pH至10,将反应体系置于水浴槽中40℃恒温水浴,磁力搅拌下反应60min,待反应结束后,将镀液静置沉淀,过滤,置于鼓风干燥箱中80℃下烘干10h,得到镍包覆的SiC颗粒。图6是实施例2中镀后的SiC颗粒SEM照片,镀后的SiC颗粒表面均匀分布胞状镍颗粒,较实现实现其对SiC颗粒的完全包覆。Take 5g of activated and sensitized SiC particles and place them in the prepared plating solution (thus, the content of SiC particles in the plating solution is 20g/L), adjust the pH of the solution to 10, and place the reaction system in a water bath at 40°C React in a constant temperature water bath for 60 minutes under magnetic stirring. After the reaction, the plating solution is left to settle, filtered, and dried in a blast drying oven at 80°C for 10 hours to obtain nickel-coated SiC particles. Fig. 6 is a SEM photo of SiC particles after plating in Example 2. Cellular nickel particles are evenly distributed on the surface of SiC particles after plating, which can completely cover SiC particles.
对实施例2得到的镍包覆的SiC颗粒在扫描电镜500×倍下随机选取进行能谱检测,图7和表5是实施例2施镀后的SiC颗粒的EDS检测结果,其中,除C、Si之外,有质量分数为2.16%的P存在,质量分数为36.50%的镍附着于颗粒表面。The nickel-coated SiC particles obtained in Example 2 were randomly selected under a scanning electron microscope at a power of 500× for energy spectrum detection. Figure 7 and Table 5 are the EDS detection results of the SiC particles after plating in Example 2, wherein, except C , Si, P with a mass fraction of 2.16% exists, and Ni with a mass fraction of 36.50% is attached to the particle surface.
表5:实施例2施镀后的SiC颗粒的EDS检测结果Table 5: EDS detection results of SiC particles after plating in Example 2
实施例3(正交实验23)Embodiment 3 (orthogonal experiment 23)
配置化学镀液250mL,该化学镀液的成分为六水合硫酸镍浓度为0.25mol/L,次亚磷酸钠的浓度为0.625mol/L,硫酸铵浓度为0.6mol/L,柠檬酸三钠的含量为0.1mol/L,以及痕量的乳酸和硫脲,用去离子水定容至250mL溶液。Configure chemical plating solution 250mL, the composition of this chemical plating solution is that the concentration of nickel sulfate hexahydrate is 0.25mol/L, the concentration of sodium hypophosphite is 0.625mol/L, the concentration of ammonium sulfate is 0.6mol/L, and the concentration of trisodium citrate is 0.25mol/L. The content is 0.1mol/L, and traces of lactic acid and thiourea, and dilute to 250mL solution with deionized water.
取活化敏化后的SiC颗粒5g置于配制好的镀液中(由此,镀液中SiC颗粒的含量为20g/L),调节溶液pH至10,将反应体系置于水浴槽中45℃恒温水浴,磁力搅拌下反应60min,待反应结束后,将镀液静置沉淀,过滤,置于鼓风干燥箱中80℃下烘干10h,得到镍包覆的SiC颗粒。在实验过程中,反应剧烈,有黑色的絮状Ni生成,图8是实施例3中镀后的SiC颗粒SEM照片,镀后的SiC颗粒表面均匀分布胞状镍颗粒,SiC颗粒的完全包覆。Take 5g of activated and sensitized SiC particles and place them in the prepared plating solution (thus, the content of SiC particles in the plating solution is 20g/L), adjust the pH of the solution to 10, and place the reaction system in a water bath at 45°C React in a constant temperature water bath for 60 minutes under magnetic stirring. After the reaction, the plating solution is left to settle, filtered, and dried in a blast drying oven at 80°C for 10 hours to obtain nickel-coated SiC particles. During the experiment, the reaction was violent, and black flocculent Ni was formed. Figure 8 is the SEM photo of the SiC particles after plating in Example 3. Cellular nickel particles are evenly distributed on the surface of the SiC particles after plating, and the SiC particles are completely covered.
对实施例3得到的镍包覆的SiC颗粒在扫描电镜500×倍下随机选取进行能谱检测,图9和表6是实施例3施镀后的SiC颗粒的EDS检测结果,其中,除C,Si之外,有质量分数为2.65%的P存在,质量分数为53.26%的镍附着于颗粒表面。The nickel-coated SiC particles obtained in Example 3 were randomly selected under a scanning electron microscope at a power of 500× for energy spectrum detection. Figure 9 and Table 6 are the EDS detection results of the SiC particles after plating in Example 3, wherein, except C , besides Si, there is 2.65% of P in mass fraction, and 53.26% of Ni in mass fraction is attached to the particle surface.
表6:实施例3施镀后的SiC颗粒的EDS检测结果Table 6: EDS detection results of SiC particles after plating in Example 3
另外,为了探讨活化敏化过程对化学镀效果的影响,以比较例3对无活化敏化的SiC颗粒进行化学镀Ni-P。In addition, in order to explore the influence of the activation sensitization process on the electroless plating effect, the SiC particles without activation sensitization were subjected to electroless Ni-P plating in Comparative Example 3.
比较例3Comparative example 3
除不进行SiC预处理不进行活化敏化,进行与实施例3相同的处理,其具体步骤如下:Except not carrying out SiC pretreatment and not carrying out activation sensitization, carry out the processing identical with embodiment 3, its specific steps are as follows:
1)取定量SiC颗粒,置于无水乙醇中超声清洗10min,过滤之后置于5质量%的NaOH溶液中超声清洗10min,过滤,置于37质量%盐酸溶液中超声清洗10min,过滤,用去离子水清洗至中性,置于鼓风干燥箱中,80℃烘干备用;1) Take quantitative SiC particles, place them in absolute ethanol for ultrasonic cleaning for 10 minutes, and after filtering, place them in 5 mass % NaOH solution for ultrasonic cleaning for 10 minutes, filter, place them in 37 mass % hydrochloric acid solution for ultrasonic cleaning for 10 minutes, filter, and use Wash with ionized water until neutral, place in a blast drying oven, and dry at 80°C for later use;
2)取20g清洁之后的SiC颗粒,置于37质量%的盐酸和去离子水按体积比1:1配制而成的300mL粗化液中;在磁力搅拌下反应20nin,待反应结束后,静置,沉淀过滤,置于鼓风干燥箱中80℃下烘干10h待用;2) Take 20g of cleaned SiC particles and place them in 300mL roughening solution prepared by 37 mass% hydrochloric acid and deionized water at a volume ratio of 1:1; place, precipitate and filter, and dry in a blast drying oven at 80°C for 10 hours for later use;
3)配置化学镀液250mL,该化学镀液成分为六水合硫酸镍浓度为0.25mol/L,次亚磷酸钠的浓度为0.625mol/L,硫酸铵浓度为0.6mol/L,柠檬酸三钠的含量为0.1mol/L,以及痕量的乳酸和硫脲,用去离子水定容至250mL溶液。取未经活化敏化的SiC颗粒5g置于配制好的镀液中(即,SiC颗粒含量为20g/L),调节溶液pH至10,将反应体系置于水浴槽中45℃恒温水浴,磁力搅拌下反应60min,待反应结束后,将镀液静置沉淀,过滤,置于鼓风干燥箱中80℃,10h烘干。3) Configure 250mL of chemical plating solution, the composition of which is 0.25mol/L of nickel sulfate hexahydrate, 0.625mol/L of sodium hypophosphite, 0.6mol/L of ammonium sulfate, and 0.6mol/L of trisodium citrate. The content of 0.1mol/L, and traces of lactic acid and thiourea, dilute to 250mL solution with deionized water. Take 5g of unactivated and sensitized SiC particles and place them in the prepared plating solution (that is, the content of SiC particles is 20g/L), adjust the pH of the solution to 10, and place the reaction system in a water bath with a constant temperature of 45°C. Stir and react for 60 minutes. After the reaction is over, let the plating solution stand for precipitation, filter, and place in a blast drying oven at 80°C for 10 hours to dry.
图10是比较例3中镀后的SiC颗粒SEM照片;图11和表7是扫面电镜随机选取500×倍下比较例3中镀后SiC颗粒的EDS检测结果。比较例3中,pH为10时制备的样品,从SEM结果来看,Ni的形态发生变化,且分布不均匀,未能完全包覆SiC。随机选区的EDS结果显示,Ni的质量分数也仅有19.60%。由此可见,活化敏化是不可或缺的重要步骤,且本发明的活化敏化对化学镀镍起到了重要的促进作用。Figure 10 is the SEM photo of the SiC particles after plating in Comparative Example 3; Figure 11 and Table 7 are the EDS detection results of the SiC particles after plating in Comparative Example 3 at a random selection of 500× magnification by the scanning electron microscope. In Comparative Example 3, the sample prepared when the pH was 10, according to the SEM results, the morphology of Ni changed, and the distribution was uneven, and the SiC could not be completely coated. The EDS result of random selection shows that the mass fraction of Ni is only 19.60%. It can be seen that the activation sensitization is an indispensable important step, and the activation sensitization of the present invention plays an important role in promoting the electroless nickel plating.
表7:比较例3中镀后SiC颗粒的EDS检测结果Table 7: EDS detection results of SiC particles after plating in Comparative Example 3
结合分析实施例1~3及比较例3可知,对原始SiC进行前处理相当重要同时配制六水合硫酸镍浓度为0.25mol/L,次亚磷酸钠的浓度为0.625mol/L,硫酸铵浓度为0.6mol/L,柠檬酸三钠的含量为0.1mol/L,以及痕量的乳酸和硫脲,用去离子水定容至250mL溶液,取活化敏化后的SiC颗粒20g/L置于配制好的镀液中,调节溶液pH至10,将反应体系置于水浴槽中45℃恒温水浴,加以磁力搅拌,得到施镀后的反应液,SiC表面包裹效果最好。Combined with the analysis of Examples 1 to 3 and Comparative Example 3, it can be seen that it is very important to pre-treat the original SiC. At the same time, the concentration of nickel sulfate hexahydrate is 0.25mol/L, the concentration of sodium hypophosphite is 0.625mol/L, and the concentration of ammonium sulfate is 0.625mol/L. 0.6mol/L, the content of trisodium citrate is 0.1mol/L, and traces of lactic acid and thiourea, the volume is made to 250mL solution with deionized water, and 20g/L of activated and sensitized SiC particles are placed in the preparation In a good plating solution, adjust the pH of the solution to 10, place the reaction system in a water bath at a constant temperature of 45°C, and stir it with a magnetic force to obtain a reaction solution after plating. The coating effect on the SiC surface is the best.
即,当化学镀液中[Ni2+]浓度为0.25mol/L,[NH4 +]浓度为0.6mol/L,[Ni2+]/[H2PO2 -]浓度之比为0.4、柠檬酸浓度为0.1mol/L,以及痕量的乳酸和硫脲时,SiC表面包裹效果最好。其他条件下Ni虽然实现对SiC颗粒表面的部分包覆,但是裸露的SiC表面具有较高的表面能,仍然存在润湿性差缺点,作为强化相不能与基体金属实现很好的界面结合。同时,活化敏化对于SiC表面镀Ni-P具有重要作用。That is, when the concentration of [Ni 2+ ] in the electroless plating solution is 0.25 mol/L, the concentration of [NH 4 + ] is 0.6 mol/L, the ratio of the concentration of [Ni 2+ ]/[H 2 PO 2 - ] is 0.4, When the concentration of citric acid is 0.1mol/L, as well as trace amounts of lactic acid and thiourea, the coating effect of SiC surface is the best. Under other conditions, although Ni achieves partial coating on the surface of SiC particles, the exposed SiC surface has high surface energy and still has the disadvantage of poor wettability. As a strengthening phase, it cannot achieve a good interface bond with the matrix metal. At the same time, the activation sensitization plays an important role in the Ni-P plating on the SiC surface.
5)化学镀后处理5) Electroless plating post-treatment
将施镀后的反应液静置沉淀,过滤,置于鼓风干燥箱中80-90℃下烘干10h以上,得到表面被镍包覆的SiC颗粒。The reaction solution after plating is left to settle, filtered, and dried in a blast drying oven at 80-90° C. for more than 10 hours to obtain SiC particles whose surface is coated with nickel.
以上所述仅为本发明的较佳实施例,并非用来限定本发明的实施范围;如果不脱离本发明的精神和范围,对本发明进行修改或者等同替换,均应涵盖在本发明权利要求的保护范围当中。The above description is only a preferred embodiment of the present invention, and is not intended to limit the implementation scope of the present invention; if it does not depart from the spirit and scope of the present invention, any modification or equivalent replacement of the present invention shall be covered by the claims of the present invention. within the scope of protection.
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CN112226704A (en) * | 2020-10-19 | 2021-01-15 | 西安工程大学 | A kind of preparation method of whisker particle hybrid reinforced copper matrix composite material |
CN113000836A (en) * | 2021-03-08 | 2021-06-22 | 昆明理工大学 | Nickel coating surface treatment method for NaCl particles |
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