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CN106920781A - 半导体封装体和用于形成半导体封装体的方法 - Google Patents

半导体封装体和用于形成半导体封装体的方法 Download PDF

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Publication number
CN106920781A
CN106920781A CN201511001298.9A CN201511001298A CN106920781A CN 106920781 A CN106920781 A CN 106920781A CN 201511001298 A CN201511001298 A CN 201511001298A CN 106920781 A CN106920781 A CN 106920781A
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CN
China
Prior art keywords
fin
die pad
die
semiconductor
semiconductor package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
CN201511001298.9A
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English (en)
Inventor
栾竟恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
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STMicroelectronics SA
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Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to CN201511001298.9A priority Critical patent/CN106920781A/zh
Priority to US15/019,617 priority patent/US20170186674A1/en
Publication of CN106920781A publication Critical patent/CN106920781A/zh
Priority to US15/858,999 priority patent/US20180122728A1/en
Pending legal-status Critical Current

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Abstract

本申请涉及半导体封装体和用于形成半导体封装体的方法。一个或多个实施例涉及一种包括集成散热片的半导体封装体以及形成半导体封装体的方法。在一个实施例中，该半导体封装体包括耦接至裸片焊盘的第一表面的半导体裸片。散热片耦接至该裸片焊盘的第二表面。包封材料包围该裸片和该裸片焊盘且在该散热片的一部分之上而定位。该散热片的底部部分可以保持从该包封材料露出。此外，该散热片的一部分可以从该包封材料的一侧延伸。

Description

半导体封装体和用于形成半导体封装体的方法
技术领域
本披露涉及半导体封装体和用于形成半导体封装体的方法。
背景技术
半导体封装体在操作期间受到相当大的热量。功率器件封装体情况尤其如此，这些封装体包括以高电流和/或电压电平操作的功率器件，从而产生显著量的热量。
为了帮助从封装体本体移除热量，功率器件封装体通常耦接至外部散热器。然而，外部散热器在可以移除的热量的量上是有限的。也就是，散热器仅能够移除它从封装体接收的热量。因此，期望封装体内的改进以将由封装体产生的热量充分传递至散热器。
一般地描述，功率器件封装体通常包括安装至引线框的裸片焊盘的半导体裸片。电介质材料(如包封材料)覆盖半导体裸片和裸片焊盘。然而，通常，裸片焊盘的底部表面保持露出。裸片焊盘是接收由裸片产生的热量的导热材料。裸片焊盘的底部表面可以耦接至散热器来将热量传送离开封装体。
最近，裸片焊盘的厚度已经增加，部分为了改善封装体的热动力学。也就是，为了改善从封装体至散热器的热传送。然而，这显著增加了封装体的成本。因此，进一步的改进是期望的。
发明内容
一个或多个实施例涉及一种包括集成散热片的半导体封装体以及形成半导体封装体的方法。在一个实施例中，该半导体封装体包括耦接至裸片焊盘的第一表面的半导体裸片和耦接至该裸片焊盘的第二表面的散热片。包封材料包围该裸片和该裸片焊盘且在该散热片的一部分之上而定位。该散热片的底部部分可以保持从包封材料露出，用于耦接至另一热组件，如散热器。此外，散热片的一部分可以从包封材料的一侧延伸。
另一个实施例涉及一种方法，该方法包括将散热片耦接至引线框的裸片焊盘的第一表面并且将半导体裸片耦接至这些裸片焊盘的第二表面。这些裸片焊盘的第二表面与第一表面彼此相对。该方法进一步包括例如通过导电线将这些半导体裸片电耦接至该引线框的引线。该方法进一步包括将这些半导体裸片、这些裸片焊盘、这些引线的部分和这些散热片的部分包封于包封材料中。这些散热片中的每一个的表面中的一个保持从该包封材料露出。
附图说明
在附图中，完全相同的参考号标识类似的元件。未必按比例绘制附图中的元件的尺寸和相对位置。
图1A至图1D展示了根据一个实施例的半导体封装体的各种视图。
图2A是引线框条带的俯视图。
图2B至图2E展示了根据本披露的实施例的用于形成半导体封装体(如图1A至图1D的半导体封装体)的装配工艺的各个阶段的横截面图。
具体实施方式
应当理解的是，虽然出于说明性目的在此描述了本披露的具体实施例，但是可在不脱离本披露的精神和范围的情况下做出各种修改。
在以下说明中，陈述了某些具体细节以便提供对所披露的主题的不同方面的全面理解。然而，所披露的主题可以在没有这些具体细节的情况下实施。在一些实例中，尚未对包括在此所披露的主题的实施例的众所周知的半导体加工结构和方法(如半导体功率器件)进行详细描述以避免模糊本披露的其他方面的描述。
图1A是根据本披露的一个实施例的半导体封装体10的俯视图。图1B和图1C分别是图1A的半导体封装体10的仰视图和侧视图，并且图1D是图1A的半导体封装体10的横截面图。
半导体封装体10包括具有第一外表面14、与第一外表面相对的第二外表面16以及外侧表面的封装体本体12。如图1D最佳所示，封装体10具有引线框，该引线框包括裸片焊盘18和多条引线20。具体地，引线20包括位于封装体本体12中的第一部分20a和从封装体本体12的侧表面延伸的第二部分20b。
引线20的第二部分20b形成电极，这些电极用于例如通过焊接电耦接至印刷电路板(PCB)(未示出)的表面上的电触点，如本领域中众所周知。例如，封装体10可以是用于例如通过通孔技术(THT)安装至印刷电路板(PCB)使得封装体10的引线20形成被插入PCB的通孔中的电极的功率器件封装体。可替代地，可以将电极焊接至PCB，如本领域中众所周知。
裸片焊盘18具有第一表面30和第二表面32并且第一表面30和第二表面32之间的距离形成其间的第一厚度。引线20具有与裸片焊盘18相同的厚度。也就是，自其形成多条引线20和裸片焊盘18的引线框至少对于引线和裸片焊盘具有单一的厚度。在一个实施例中，引线20和裸片焊盘18的厚度是0.3毫米。引线框由导电材料制成并且可以是金属材料，如铜或铜合金。
通过第一粘合材料38将半导体裸片36耦接至裸片焊盘18的第一表面30。半导体裸片36包括半导体材料(诸如硅)并且集成任何电子组件。电子组件可以是功率器件，如功率二极管或功率MOSFET。第一粘合材料38可以是被配置为用于将半导体裸片36固定于裸片焊盘18的任何材料，如焊料、粘胶、膜、粘膏、胶带、环氧树脂、它们的组合或任何合适的材料。第一粘合材料38可以是导电材料和/或导热材料。在一个实施例中，第一粘合材料38是低熔融温度的焊料，如在低于185℃的温度下开始熔融的焊料，并且在一个实施例中在小于或等于183℃的温度下开始熔融。
通过导电线41将半导体裸片36电耦接至引线20中的至少一条引线，如图1D中所示。具体地，导电线41的第一端被耦接至裸片36的键合焊盘并且第二端被耦接至引线20的第一部分20a。导电线41可以是将半导体裸片36电耦接至引线20的任何导电材料并且可以是金属材料，如铝、金、铜及其合金。虽然在图1D的横截面图中未示出，引线20中的一条引线(如中心引线)可以耦接至裸片焊盘18或与其集成，该引线在一个实施例中形成功率MOSFET的漏极电极，而外部引线可以形成功率MOSFET的源极电极和栅极电极。
虽然在图1A中示出三条引线20，半导体封装体10可以包括任何数量的引线，如两条或更多条引线，如本领域中众所周知。
尽管未示出，引线20的表面的至少一部分可以被镀以一个或多个导电层。该一个或多个导电层是纳米层或微层，并且可以是任何导电材料制成。在一个实施例中，一个或多个导电层是多个堆叠的金属层，如Ni/Pd/Ag、Ni/Pd/Au-Ag合金或Ni/Pd/Au/Ag。该一个或多个导电层可以保护引线框材料免受腐蚀，并且可以帮助键合导电特征，如将导电线41键合到引线20。
封装体10进一步包括散热片40，该散热片由第二粘合材料42耦接至裸片焊盘18的第二表面32。优选地，第二粘合材料42导热并且也可以导电。第二粘合材料42可以是在上面参照第一粘合材料38列出的粘合材料中的任一种。第二粘合材料42可以具有比第一粘合材料38更高的熔融温度。例如，第二粘合材料42可以在大于或等于185℃的温度下开始熔融，并且在一个实施例中在大于或等于190℃的温度下开始熔融。可替代地，第二粘合材料42可以是与第一粘合材料38相同的粘合材料。
散热片40是任何导热材料。例如，散热片40可以是金属材料，如铜和铝及其合金、陶瓷或任何其他导热材料。散热片40接收半导体裸片36在操作期间产生的热量。也就是，散热片接收通过裸片焊盘18以及第一粘合材料38和第二粘合材料42从半导体裸片36接收的热量。
散热片40具有在裸片焊盘18下方并且由封装体本体12部分地覆盖的第一部分40a和延伸超出封装体本体12的第二部分40b。具体地，散热片40在第一部分40a的第一表面耦接至裸片焊盘18。散热片40的第二表面形成封装体本体12的第二外表面16的一部分。
散热片40的尺寸是允许合适地移除由半导体裸片36产生的热量中的一些热量的任何尺寸。在一个实施例中，散热片40的第一部分40a可以覆盖裸片焊盘18的整个第二表面32。在这方面，散热片40具有与裸片焊盘18配合的最大表面积，用于移除由裸片焊盘18从半导体裸片36接收的热量。在这方面，散热片40的第一部分40a可以是与裸片焊盘18相同的大小或者比裸片焊盘18大。散热片40的第二部分40b可以比散热片40的第一部分40a大。
散热片40还可以提供对半导体裸片36连同裸片焊盘18的支撑。也就是，在其中引线框材料较薄且在装配加工期间不足以支撑半导体裸片36的一些实施例中，散热片40可以提供对半导体裸片36的进一步支撑。一般地，散热片40的厚度(即，第一表面和第二表面之间的距离)是适合于将热量从半导体裸片36传送至封装体10的外部的任何厚度。在一些实施例中，散热片40具有约2至4.5毫米的厚度。
封装体本体12部分地由包围半导体裸片36、导电线41、裸片焊盘18以及引线20和散热片40的部分的包封材料46形成。具体地，半导体裸片36、导电线和裸片焊盘18被完全包封于包封材料46中。引线20的第一部分20a位于包封材料46中，而第二部分20b从包封材料46的侧表面(它形成封装体本体12的侧表面)延伸。包封材料46在散热片40的第一部分40a的第一表面之上并沿着散热片40的第一部分40a的侧表面而定位。然而，第一部分40a的第二表面保持从包封材料46露出。类似地，散热片40的第二部分40b保持从包封材料46露出。
包封材料46是电介质材料，保护半导体裸片36的电气组件和导电线41不受损坏，如腐蚀、物理损坏、湿气损坏或对电气设备和材料的损坏的其他原因。在一个实施例中，包封材料46是聚合物，如环氧树脂模。
如上所述，散热片40的第一部分的第一表面由包封材料46覆盖，而第二表面保持从包封材料46露出。也就是，散热片40的整个第二表面从包封材料46露出。散热片40的第二表面可以在封装体本体12的第二外表面16与包封材料46的表面共面。
散热片40可以被配置为用于耦接至封装体外部的散热器(未示出)。也就是，散热器可以耦接至散热片的第二表面。在一些实施例中，散热片40的第二部分40b可以包括用于接纳紧固件以将散热片40耦接至散热器的开口(未示出)。可替代地，散热片40可以由夹子或粘合材料固定至散热器。散热器还有助于从封装体10移除热量。
通过具有单一量规引线框封装体或者对于引线和裸片焊盘具有单一厚度的引线框(如上文所描述)，减少了用于形成引线框的装配工艺。此外，也降低了与形成用于形成封装体的引线框相关联的成本。另外，通过具有单一量规引线框，可以减少安装至引线框的半导体裸片的开裂。特别是，由于半导体裸片和裸片焊盘之间的不同的热膨胀系数(CTE)已导致较薄的裸片(如厚度为100微米或更小的裸片)开裂。通过在封装体本身内提供具有耦接至其的散热片的薄裸片焊盘，在封装体本身内允许一些挠曲，从而减少在封装体中可能发生的应力。也就是，由于裸片焊盘的厚度减小，裸片焊盘比在较厚的裸片焊盘的情况下更能够挠曲。此外，散热片可以在挠曲期间充当用于裸片焊盘的支撑结构。在这方面，在本封装体中可以比在现有技术封装体中所提供更好地适应由于裸片和裸片焊盘之间的不同CTE导致的任何膨胀和收缩。
此外，通过形成具有集成在封装体本体中的散热片的封装体，获得了各种益处。如上所述，散热片在装配工艺期间提供了对半导体裸片的支撑。另外，散热片的大小(如厚度)可以被确定为适应封装体的需要，如将装配于封装体中的半导体裸片的类型，或者对针对封装体的应用的热要求的需要。最后，在封装体本体中具有散热片为消费者提供了简化的单个单元。
图2A是用于形成多个单独的封装体(如图1A至图1D的封装体10)的引线框条带50的部分俯视图。尽管引线框的仅两个单独的封装体部分被示出(每一个单独的封装体部分具有裸片焊盘18和与裸片焊盘18相关联的三条引线20)，但是应该理解的是，引线框条带50可以以单个条带或者矩阵的形式包括引线框的任何数量的单独的封装体部分。引线20通过连接棒耦接在一起，这些连接棒将在单独的封装体的装配后在单片化步骤中移除。
图2B至图2E展示了根据本披露的一个实施例的用于形成图1的封装体10的装配工艺的不同阶段的横截面图。如图2B中所示，引线框条带50的厚度是均匀的，这也被称为单一量规引线框。也就是，引线框条带50的裸片焊盘18和引线20具有相同的厚度。
如图2C中所示，散热片40被耦接至裸片焊盘18的第二表面32。具体地，将第二粘合材料42施加至裸片焊盘18的第二表面32和散热片40的第一部分40a中的至少一个。将散热片40的第一部分40a放置在裸片焊盘18的第二表面32上，它们通过第二粘合材料42耦接在一起。在一些实施例中，可以对散热片40和裸片焊盘18中的至少一个施加热和/或压力，以协助散热片40与裸片焊盘18的耦接。如上所述，散热片40可以在后续加工期间(如在裸片附接期间)提供对裸片焊盘18的进一步支撑，这将在下面描述。
如图2D中所示，半导体裸片36(如集成了功率器件的半导体裸片)被耦接至裸片焊盘18的第一表面30。具体地，将第一粘合材料42施加至半导体裸片36的背面侧和裸片焊盘18的第一表面30中的至少一个。将半导体裸片36放置在裸片焊盘18上。可以对半导体裸片36和裸片焊盘18中的至少一个施加热和/或压力，以协助半导体裸片36与裸片焊盘18的耦接。
将半导体裸片36电耦接至引线20的第一部分20a。也就是，导电线41的第一端被耦接至半导体裸片36的键合焊盘，并且导电线41的第二端被耦接至引线20的第一部分20a。虽然未示出，可以在半导体裸片36和引线20之间耦接一条以上的导电线。
如图2E中所示，包围半导体裸片36、导电线41、引线20的第一部分40a、裸片焊盘18和散热片40的一部分形成包封材料46。例如，可以使用模制工艺来形成包封材料46。也就是，可以将引线框条带50放置于模具中并且将包封材料46注入到模具中。包封材料46随着时间的推移可以硬化，这也可以包括固化步骤。如上所述，包封材料46可以是聚合物，如环氧树脂模。
然后将引线框条带50单片化，以形成单独的封装体10，从而形成多个单独的封装体。单片化可通过各种切割方法发生，包括锯、冲孔以及激光切割。如在本领域中很好地理解，在单片化工艺期间移除引线框条带的连接棒，从而将引线彼此电隔离。
上述各实施例可以被组合以提供进一步的实施例。在本说明书中所提及的和/或在申请资料表中所列出的所有美国专利、美国专利申请出版物、美国专利申请、国外专利、国外专利申请和非专利出版物都以其全文通过引用结合在此。如有必要，可以对实施例的各方面进行修改，以利用各专利、申请和出版物的概念来提供更进一步的实施例。
鉴于以上详细描述，可以对实施例做出这些和其他变化。总之，在以下权利要求书中，所使用的术语不应当被解释为将权利要求书局限于本说明书和权利要求书中所披露的特定实施例，而是应当被解释为包括所有可能的实施例、连同这些权利要求有权获得的等效物的整个范围。因此，权利要求书不受本披露的限制。

Claims (17)

1.一种半导体封装体，包括：
裸片焊盘，所述裸片焊盘具有第一表面和与所述第一表面分开第一厚度的第二表面；
多条引线，所述多条引线具有与所述第一厚度相同的第二厚度；
第一粘合材料，所述第一粘合材料具有第一熔融温度；
第二粘合材料，所述第二粘合材料具有第二熔融温度，所述第二粘合材料的所述第二熔融温度比所述第一粘合材料的所述第一熔融温度更高；
半导体裸片，所述半导体裸片通过所述第一粘合材料耦接至所述裸片焊盘的所述第一表面，所述半导体裸片电耦接至所述多条引线；
散热片，所述散热片通过所述第二粘合材料耦接至所述裸片焊盘的所述第二表面；以及
包封材料，所述包封材料在所述半导体裸片、所述裸片焊盘之上且包围所述散热片和所述多条引线的部分。
2.如权利要求1所述的半导体封装体，其中，所述散热片从所述包封材料的侧表面向外延伸。
3.如权利要求1所述的半导体封装体，其中，所述封装体的外表面由所述包封材料的表面和所述散热片的表面形成。
4.如权利要求3所述的半导体封装体，其中，所述包封材料的所述表面和所述散热片的所述表面共面。
5.如权利要求1所述的半导体封装体，进一步包括将所述半导体裸片电耦接至所述多条引线的导电线。
6.如权利要求1所述的半导体封装体，其中，所述散热片是金属材料或陶瓷。
7.如权利要求1所述的半导体封装体，其中，所述第二粘合材料是导电粘合材料。
8.一种方法，包括：
使用具有第一熔融温度的第一粘合材料将散热片耦接至引线框的裸片焊盘的第一表面；
使用具有第二熔融温度的第二粘合材料将半导体裸片耦接至所述裸片焊盘的第二表面，所述第二熔融温度小于所述第一熔融温度，所述第二表面与所述第一表面相对；
将所述半导体裸片电耦接至所述引线框的引线；并且
将所述半导体裸片、所述裸片焊盘、所述引线的部分和所述散热片的部分包封于包封材料中，其中，所述散热片的表面从所述包封材料露出。
9.根据权利要求8所述的方法，其中，耦接所述散热片包括在所述裸片焊盘的所述表面和所述散热片的表面中的至少一者上分配所述第一粘合材料并且将所述散热片放置在所述裸片焊盘的所述第一表面上。
10.根据权利要求8所述的方法，其中，所述引线框的所述裸片焊盘具有第一厚度并且所述引线框的所述引线具有第二厚度，其中，所述第一厚度与所述第二厚度相同。
11.根据权利要求8所述的方法，其中，将散热片耦接至引线框的裸片焊盘的第一表面包括将所述散热片的第一部分耦接至所述裸片焊盘的所述第一表面，使得所述散热片的第二部分延伸超出所述裸片焊盘。
12.根据权利要求8所述的方法，进一步包括切割所述引线框和包封材料并且形成单独的半导体封装体。
13.根据权利要求12所述的方法，其中，所述散热片的所述露出表面与所述包封材料的表面共面。
14.一种半导体封装体，包括：
裸片焊盘，所述裸片焊盘具有第一表面和第二表面；
多条引线；
半导体裸片，所述半导体裸片耦接至所述裸片焊盘的所述第一表面且电耦接至所述多条引线；
散热片，所述散热片通过导电粘合剂耦接至所述裸片焊盘的所述第二表面；以及
包封材料，所述包封材料覆盖所述半导体裸片、所述裸片焊盘和所述散热片的一个或多个侧表面的至少一部分。
15.如权利要求14所述的半导体封装体，其中，所述包封材料覆盖所述散热片的第一部分的侧表面，其中，所述散热片的第二部分的侧表面保持从所述包封材料露出。
16.如权利要求14所述的半导体封装体，其中，所述半导体裸片通过粘合材料耦接至所述裸片焊盘的所述第一表面，所述粘合材料不同于所述导电粘合材料。
17.如权利要求16所述的半导体封装体，其中，所述粘合材料具有比所述导电粘合材料更低的熔融温度。
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