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CN106910762B - Organic light emitting diode display device - Google Patents

Organic light emitting diode display device Download PDF

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CN106910762B
CN106910762B CN201510979808.3A CN201510979808A CN106910762B CN 106910762 B CN106910762 B CN 106910762B CN 201510979808 A CN201510979808 A CN 201510979808A CN 106910762 B CN106910762 B CN 106910762B
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electrode
emitting diode
light emitting
organic light
protective cover
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CN106910762A (en
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刘振宇
苏信远
林熙乾
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TPK Touch Solutions Inc
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/841Self-supporting sealing arrangements

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种有机发光二极管显示装置,包含一驱动基板、至少一有机发光二极管结构、至少一覆盖电极、至少一像素定义结构以及一保护盖。驱动基板包含至少一像素电极。有机发光二极管结构是设置于像素电极上。有机发光二极管结构是位于像素电极与覆盖电极之间。像素定义结构是设置于驱动基板上。像素定义结构具有一容置空间。有机发光二极管结构与覆盖电极是位于容置空间中。保护盖覆盖驱动基板、有机发光二极管结构、覆盖电极与像素定义结构。像素定义结构抵顶保护盖。通过上述配置,有机发光二极管显示装置可有效地防止湿气及/或氧气损害保护盖下方的有机发光二极管结构。

An organic light emitting diode display device includes a driving substrate, at least one organic light emitting diode structure, at least one covering electrode, at least one pixel definition structure and a protective cover. The driving substrate includes at least one pixel electrode. The organic light emitting diode structure is disposed on the pixel electrode. The organic light emitting diode structure is located between the pixel electrode and the covering electrode. The pixel definition structure is disposed on the driving substrate. The pixel definition structure has a housing space. The organic light emitting diode structure and the covering electrode are located in the housing space. The protective cover covers the driving substrate, the organic light emitting diode structure, the covering electrode and the pixel definition structure. The pixel definition structure abuts the protective cover. Through the above configuration, the organic light emitting diode display device can effectively prevent moisture and/or oxygen from damaging the organic light emitting diode structure under the protective cover.

Description

有机发光二极管显示装置Organic Light Emitting Diode Display Device

技术领域technical field

本发明是关于显示技术,特别是关于一种有机发光二极管显示装置。The invention relates to display technology, in particular to an organic light emitting diode display device.

背景技术Background technique

由于有机发光二极管具有诸如自发光性、高操作速度、低操作电压与薄元件层等优点,故为显示技术的主流之一。Organic light-emitting diodes are one of the mainstream display technologies due to their advantages such as self-luminescence, high operating speed, low operating voltage, and thin device layers.

一般来说,彩色式的有机发光二极管显示装置通常会在不同像素区中,采用不同类型的有机材料。当电子与空穴在不同类型的有机材料层中结合时,可发出不同颜色的光,从而显示彩色影像。彩色式有机发光二极管显示装置的制作过程中,通常会将不同像素区的材料(包含有机材料与电极材料等等)蒸镀在基板上。为了利于将材料蒸镀在所需区域上,制造者通常会利用张网(tension mask)做为遮蔽,以遮蔽无需蒸镀的区域,并露出欲蒸镀的区域。在蒸镀过程中,由于张网无法紧密地贴合于基板上,故蒸镀于像素区边缘的材料容易发生膜厚不均的现象。这样的现象容易导致上、下两电极的短路或产生漏电流。Generally speaking, in a color OLED display device, different types of organic materials are usually used in different pixel regions. When electrons and holes combine in layers of different types of organic materials, different colors of light can be emitted, thereby displaying colored images. During the manufacturing process of the color organic light emitting diode display device, materials (including organic materials and electrode materials, etc.) of different pixel regions are usually vapor-deposited on the substrate. In order to facilitate evaporation of materials on desired areas, manufacturers usually use a tension mask as a shield to cover areas that do not need to be evaporated and expose areas to be evaporated. During the evaporation process, since the stretched mesh cannot be closely attached to the substrate, the material evaporated on the edge of the pixel area is prone to uneven film thickness. Such a phenomenon easily leads to a short circuit between the upper and lower electrodes or leakage current.

为了克服这样的问题,可在基板上先沉积一层像素定义层(pixel define layer;PDL),并露出基板的欲蒸镀的区域,再进行蒸镀作业。In order to overcome this problem, a pixel define layer (PDL) can be deposited on the substrate first, and the area to be evaporated on the substrate is exposed, and then the evaporation operation is performed.

当有机材料与电极材料蒸镀完成后,会通过框胶贴合于保护盖下方。然而,由于保护盖下表面仅贴合着框胶,故湿气或氧气容易从保护盖与框胶之间的空隙渗入保护盖下方,而可能损害保护盖下方的有机材料与电极材料。After the evaporation of the organic material and the electrode material is completed, it will be pasted under the protective cover through the frame glue. However, since the lower surface of the protective cover is only bonded with frame glue, moisture or oxygen can easily penetrate into the bottom of the protective cover from the gap between the protective cover and the frame glue, which may damage the organic materials and electrode materials under the protective cover.

发明内容Contents of the invention

于本发明的多个实施方式中,有机发光二极管显示装置可有效地防止湿气及/或氧气损害保护盖下方的有机材料与电极材料。In various embodiments of the present invention, the organic light emitting diode display device can effectively prevent moisture and/or oxygen from damaging organic materials and electrode materials under the protective cover.

依据本发明的一实施方式,一种有机发光二极管显示装置包含一驱动基板、至少一有机发光二极管结构、至少一覆盖电极、至少一像素定义结构以及一保护盖。驱动基板包含至少一像素电极。有机发光二极管结构是设置于像素电极上。有机发光二极管结构是位于像素电极与覆盖电极之间。像素定义结构是设置于驱动基板上。像素定义结构具有一容置空间。有机发光二极管结构与覆盖电极是位于容置空间中。保护盖覆盖驱动基板、有机发光二极管结构、覆盖电极与像素定义结构。像素定义结构抵顶保护盖。According to an embodiment of the present invention, an organic light emitting diode display device includes a driving substrate, at least one organic light emitting diode structure, at least one covering electrode, at least one pixel defining structure and a protective cover. The driving substrate includes at least one pixel electrode. The organic light emitting diode structure is arranged on the pixel electrode. The OLED structure is located between the pixel electrode and the cover electrode. The pixel definition structure is arranged on the driving substrate. The pixel definition structure has an accommodating space. The organic light emitting diode structure and the covering electrode are located in the accommodation space. The protective cover covers the driving substrate, the organic light emitting diode structure, the covering electrode and the pixel definition structure. The pixel definition structure rests against the protective cover.

于上述实施方式中,由于有机发光二极管结构与覆盖电极均位于像素定义结构的容置空间中,且像素定义结构抵顶保护盖,因此,像素定义结构可防止湿气及/或氧气渗入像素定义结构的容置空间中,从而防止湿气及/或氧气损害有机发光二极管结构。In the above embodiments, since the organic light emitting diode structure and the cover electrode are located in the accommodating space of the pixel definition structure, and the pixel definition structure touches the protective cover, the pixel definition structure can prevent moisture and/or oxygen from penetrating into the pixel definition In the accommodating space of the structure, moisture and/or oxygen are prevented from damaging the organic light emitting diode structure.

以上所述仅是用以阐述本发明所欲解决的问题、解决问题的技术手段、及其产生的功效等等,本发明的具体细节将在下文的实施方式及相关附图中详细介绍。The above description is only used to illustrate the problem to be solved by the present invention, the technical means for solving the problem, and the effects thereof.

附图说明Description of drawings

为让本发明的实施方式更明显易懂,所附附图的说明如下:In order to make the embodiments of the present invention more obvious and understandable, the description of the accompanying drawings is as follows:

图1绘示依据本发明一实施方式的有机发光二极管显示装置的剖面示意图;1 shows a schematic cross-sectional view of an organic light emitting diode display device according to an embodiment of the present invention;

图2绘示依据本发明一实施方式的有机发光二极管显示装置的剖面示意图;以及2 shows a schematic cross-sectional view of an OLED display device according to an embodiment of the present invention; and

图3绘示依据本发明一实施方式的有机发光二极管显示装置的剖面示意图。FIG. 3 is a schematic cross-sectional view of an OLED display device according to an embodiment of the present invention.

具体实施方式Detailed ways

以下将以附图揭露本发明的多个实施方式,为明确说明起见,许多实务上的细节将在以下叙述中一并说明。然而,熟悉本领域的技术人员应当了解到,在本发明另一实施例中,这些实务上的细节并非必要的,因此不应用以限制本发明。此外,为简化附图起见,一些已知惯用的结构与元件在附图中将以简单示意的方式绘示。A number of embodiments of the present invention will be disclosed below with the accompanying drawings. For the sake of clarity, many practical details will be described together in the following description. However, those skilled in the art should understand that in another embodiment of the present invention, these practical details are not necessary and thus should not be used to limit the present invention. In addition, for the sake of simplifying the drawings, some known and conventional structures and elements will be shown in a simple and schematic manner in the drawings.

图1绘示依据本发明一实施方式的有机发光二极管显示装置的剖面示意图。如图1所示,于本实施方式中,有机发光二极管显示装置包含驱动基板100、有机发光二极管结构200、覆盖电极300、像素定义结构400以及保护盖500。驱动基板100包含像素电极110。有机发光二极管结构200是设置于像素电极110上。覆盖电极300是设置于有机发光二极管结构200上。换句话说,有机发光二极管结构200是位于像素电极110与覆盖电极300之间,且可受像素电极110与覆盖电极300所驱动而发光。像素定义结构400是设置于驱动基板100上。像素定义结构400具有容置空间S。像素电极110是部分裸露于容置空间S的底部开口。有机发光二极管结构200与覆盖电极300是位于容置空间S中。保护盖500覆盖驱动基板100、有机发光二极管结构200。像素定义结构400抵顶保护盖500。FIG. 1 is a schematic cross-sectional view of an OLED display device according to an embodiment of the present invention. As shown in FIG. 1 , in this embodiment, an OLED display device includes a driving substrate 100 , an OLED structure 200 , a cover electrode 300 , a pixel definition structure 400 and a protective cover 500 . The driving substrate 100 includes a pixel electrode 110 . The OLED structure 200 is disposed on the pixel electrode 110 . The cover electrode 300 is disposed on the OLED structure 200 . In other words, the OLED structure 200 is located between the pixel electrode 110 and the cover electrode 300 , and can be driven by the pixel electrode 110 and the cover electrode 300 to emit light. The pixel definition structure 400 is disposed on the driving substrate 100 . The pixel definition structure 400 has an accommodating space S. The bottom opening of the pixel electrode 110 is partially exposed in the accommodating space S. As shown in FIG. The OLED structure 200 and the cover electrode 300 are located in the containing space S. Referring to FIG. The protective cover 500 covers the driving substrate 100 and the OLED structure 200 . The pixel definition structure 400 abuts against the protective cover 500 .

于此实施方式中,由于像素定义结构400抵顶保护盖500,且有机发光二极管结构200与覆盖电极300均位于像素定义结构400的容置空间S中,且像素电极110是部分裸露于容置空间S的底部开口,因此,抵顶着保护盖500的像素定义结构400可防止湿气及/或氧气渗入像素定义结构400的容置空间S中,从而防止湿气及/或氧气损害覆盖电极300、有机发光二极管结构200、与像素电极110。换句话说,于此实施方式中,可利用像素定义结构400来实现阻隔湿气及/或氧气的效果。In this embodiment, since the pixel defining structure 400 is against the protective cover 500, and the organic light emitting diode structure 200 and the cover electrode 300 are located in the accommodation space S of the pixel defining structure 400, and the pixel electrode 110 is partially exposed in the accommodation space S. The bottom of the space S is open, therefore, the pixel definition structure 400 against the protective cover 500 can prevent moisture and/or oxygen from penetrating into the accommodating space S of the pixel definition structure 400, thereby preventing moisture and/or oxygen from damaging the covering electrodes 300 . The OLED structure 200 and the pixel electrode 110 . In other words, in this embodiment, the effect of blocking moisture and/or oxygen can be achieved by utilizing the pixel defining structure 400 .

于部分实施方式中,像素定义结构400与保护盖500可相抵压或粘合。这两者的抵压力量或粘合强度是足够强到能够防止气体及/或液体渗入像素定义结构400的容置空间S中,以进一步地阻隔湿气及/或氧气。举例来说,于部分实施方式中,像素定义结构400与保护盖500是以防水胶粘合在一起的,以阻隔湿气及/或氧气。In some implementations, the pixel defining structure 400 and the protective cover 500 can be pressed against or bonded together. The resistive force or adhesive strength of the two is strong enough to prevent gas and/or liquid from penetrating into the accommodating space S of the pixel defining structure 400 to further block moisture and/or oxygen. For example, in some implementations, the pixel defining structure 400 and the protective cover 500 are glued together with waterproof glue to block moisture and/or oxygen.

于部分实施方式中,有机发光二极管结构200与覆盖电极300紧密地接触像素定义结构400的容置空间S的内壁。进一步来说,在制作有机发光二极管结构200与覆盖电极300之前,可先在驱动基板100上形成像素定义结构400。接着,可在像素定义结构400的容置空间S中,沉积有机发光二极管结构200的材料与覆盖电极300的材料。通过上述方式所形成的有机发光二极管结构200与覆盖电极300,可紧密地接触像素定义结构400的容置空间S的内壁。于部分实施方式中,有机发光二极管结构200与覆盖电极300的材料的沉积方式可包含物理气相沉积(如蒸镀或溅镀)或化学气相沉积,但本发明不以此为限。In some implementations, the OLED structure 200 and the cover electrode 300 are in close contact with the inner wall of the accommodating space S of the pixel defining structure 400 . Further, before fabricating the OLED structure 200 and the cover electrode 300 , the pixel definition structure 400 can be formed on the driving substrate 100 first. Next, the material of the OLED structure 200 and the material of the covering electrode 300 can be deposited in the accommodating space S of the pixel definition structure 400 . The organic light emitting diode structure 200 and the covering electrode 300 formed in the above manner can closely contact the inner wall of the accommodating space S of the pixel defining structure 400 . In some embodiments, the deposition method of the OLED structure 200 and the material covering the electrode 300 may include physical vapor deposition (such as evaporation or sputtering) or chemical vapor deposition, but the invention is not limited thereto.

于部分实施方式中,像素定义结构400可用以将有机发光二极管结构200所发出的光线反射回容置空间S中。如此一来,即便有机发光二极管结构200可能发出侧向光线而使光线进入像素定义结构400中,像素定义结构400亦可将光线反射回容置空间S中,以提升有机发光二极管结构200上方的亮度。于部分实施方式中,覆盖电极300与保护盖500相隔一间隙,此间隙中的介质(如氮气等气体)与覆盖电极300的材质的折射率不同。倘若覆盖电极300的材质与覆盖电极300上方的介质(如氮气等气体)的折射率差异过大,导致光线在覆盖电极300的上表面发生全反射而进入像素定义结构400中,像素定义结构400亦可将此光线反射回容置空间S中,以提升有机发光二极管结构200上方的亮度。In some implementations, the pixel definition structure 400 can be used to reflect the light emitted by the OLED structure 200 back into the accommodating space S. Referring to FIG. In this way, even though the OLED structure 200 may emit lateral light and cause the light to enter the pixel definition structure 400, the pixel definition structure 400 can also reflect the light back into the accommodating space S, so as to improve the light intensity above the OLED structure 200. brightness. In some implementations, the cover electrode 300 is separated from the protective cover 500 by a gap, and the medium (such as nitrogen gas) in the gap has a different refractive index from the material of the cover electrode 300 . If the refractive index difference between the material of the covering electrode 300 and the medium above the covering electrode 300 (such as nitrogen and other gases) is too large, resulting in total reflection of light on the upper surface of the covering electrode 300 and entering the pixel definition structure 400, the pixel definition structure 400 The light can also be reflected back into the accommodating space S to enhance the brightness above the OLED structure 200 .

于部分实施方式中,如图1所示,像素定义结构400可包含透光体410以及反射体420。透光体410位于驱动基板100上并定义容置空间S,并接触有机发光二极管结构200与覆盖电极300。透光体410抵顶保护盖500。反射体420是位于驱动基板100上,并被透光体410所覆盖。如此一来,当在覆盖电极300上表面发生全反射的光线及/或有机发光二极管结构200发出的侧向光线抵达像素定义结构400时,这些光线可进入透光体410中而抵达反射体420。当这些光线抵达反射体420时,反射体420可将这些光线反射回容置空间S中,以提升有机发光二极管结构200上方的亮度。In some implementations, as shown in FIG. 1 , the pixel definition structure 400 may include a transparent body 410 and a reflector 420 . The transparent body 410 is located on the driving substrate 100 and defines the accommodating space S, and contacts the OLED structure 200 and the covering electrode 300 . The transparent body 410 is against the protective cover 500 . The reflector 420 is located on the driving substrate 100 and covered by the transparent body 410 . In this way, when the light totally reflected on the upper surface of the cover electrode 300 and/or the side light emitted by the OLED structure 200 reaches the pixel definition structure 400 , these light rays can enter the light-transmitting body 410 and reach the reflector 420 . When the light reaches the reflector 420 , the reflector 420 can reflect the light back into the accommodating space S to increase the brightness above the OLED structure 200 .

于部分实施方式中,反射体420至保护盖500的最短距离是小于有机发光二极管结构200至保护盖500的最短距离。换句话说,反射体420的最高位置P1的高度是高于有机发光二极管结构200的最高位置P2的高度。如此一来,当在覆盖电极300上表面发生全反射的光线及/或有机发光二极管结构200发出的侧向光线进入像素定义结构400时,可较佳地确保这些光线能够遭遇到反射体420,而被反射体420所反射。应了解到,反射体420的最高位置P1为反射体420上最靠近保护盖500的位置。有机发光二极管结构200的最高位置P2为有机发光二极管结构200上最靠近保护盖500的位置。In some embodiments, the shortest distance from the reflector 420 to the protective cover 500 is smaller than the shortest distance from the OLED structure 200 to the protective cover 500 . In other words, the height of the highest position P1 of the reflector 420 is higher than the height of the highest position P2 of the OLED structure 200 . In this way, when the light totally reflected on the upper surface of the covering electrode 300 and/or the side light emitted by the OLED structure 200 enters the pixel definition structure 400 , it can be preferably ensured that the light can encounter the reflector 420 , and is reflected by the reflector 420 . It should be understood that the highest position P1 of the reflector 420 is the position on the reflector 420 closest to the protective cover 500 . The highest position P2 of the OLED structure 200 is the position closest to the protective cover 500 on the OLED structure 200 .

于部分实施方式中,反射体420具有厚度T1,有机发光二极管结构200具有厚度T2。反射体420的厚度T1是大于有机发光二极管结构200的厚度T2。如此一来,当在覆盖电极300上表面发生全反射的光线及/或有机发光二极管结构200发出的侧向光线进入像素定义结构400时,可较佳地确保这些光线能够遭遇到反射体420,而被反射体420所反射。In some embodiments, the reflector 420 has a thickness T1, and the OLED structure 200 has a thickness T2. The thickness T1 of the reflector 420 is greater than the thickness T2 of the OLED structure 200 . In this way, when the light totally reflected on the upper surface of the covering electrode 300 and/or the side light emitted by the OLED structure 200 enters the pixel definition structure 400 , it can be preferably ensured that the light can encounter the reflector 420 , and is reflected by the reflector 420 .

于部分实施方式中,反射体420是沿着朝向保护盖500的方向呈渐缩状的,如此可利于将有机发光二极管结构200发出的侧向光线朝保护盖500反射,以提升有机发光二极管结构200上方的亮度。举例来说,反射体420可为锥台状结构,而具有相对的顶面421与底面422。底面422比顶面421更靠近驱动基板100,亦即,顶面421比底面422更靠近保护盖500。底面422的面积是大于顶面421的面积,以利反射体420沿着朝向保护盖500的方向呈渐缩状。In some embodiments, the reflector 420 is tapered along the direction toward the protective cover 500 , which is beneficial to reflect the side light emitted by the OLED structure 200 toward the protective cover 500 to improve the OLED structure. Brightness above 200. For example, the reflector 420 can be a truncated cone structure with opposite top surface 421 and bottom surface 422 . The bottom surface 422 is closer to the driving substrate 100 than the top surface 421 , that is, the top surface 421 is closer to the protective cover 500 than the bottom surface 422 . The area of the bottom surface 422 is greater than that of the top surface 421 , so that the reflector 420 is tapered along the direction toward the protective cover 500 .

于部分实施方式中,像素定义结构400的制作方法如下。首先,可沉积反射体420的材料于驱动基板100上,以形成反射体420。接着,可沉积透光体410的材料于驱动基板100与反射体420上,以形成透光体410。于部分实施方式中,上述沉积方式可包含物理气相沉积(如蒸镀或溅镀)或化学气相沉积或是湿式印刷涂布的方式沉积,但本发明不以此为限。In some embodiments, the fabrication method of the pixel definition structure 400 is as follows. Firstly, the material of the reflector 420 can be deposited on the driving substrate 100 to form the reflector 420 . Then, the material of the transparent body 410 can be deposited on the driving substrate 100 and the reflector 420 to form the transparent body 410 . In some embodiments, the above-mentioned deposition methods may include physical vapor deposition (such as evaporation or sputtering), chemical vapor deposition, or wet printing coating deposition, but the present invention is not limited thereto.

于部分实施方式中,如图1所示,有机发光二极管显示装置还包含偏振片600。像素定义结构400的反射体420是位于偏振片600与驱动基板100之间。进一步来说,偏振片600是设置于保护盖500上。借此,偏振片600可使环境光偏振后再进入像素定义结构400中,故较不易被反射体420所反射。如此一来,偏振片600可降低环境光的反射,以提升有机发光二极管显示装置的视觉品味。举例来说,偏振片600可为圆偏振片,但本发明不以此为限。In some implementations, as shown in FIG. 1 , the OLED display device further includes a polarizer 600 . The reflector 420 of the pixel definition structure 400 is located between the polarizer 600 and the driving substrate 100 . Further, the polarizer 600 is disposed on the protective cover 500 . In this way, the polarizer 600 can polarize ambient light and then enter the pixel definition structure 400 , so it is less likely to be reflected by the reflector 420 . In this way, the polarizer 600 can reduce the reflection of ambient light, so as to improve the visual taste of the OLED display device. For example, the polarizer 600 can be a circular polarizer, but the invention is not limited thereto.

于部分实施方式中,有机发光二极管显示装置还可包含框体700。框体700是抵顶于驱动基板100与保护盖500之间,且框体700是位于像素定义结构400的外侧。换句话说,框体700围绕像素定义结构400。如此一来,框体700可进一步地防止湿气及/或氧气渗入像素定义结构400。于部分实施方式中,框体700可为框胶,但本发明不以此为限。In some implementations, the OLED display device may further include a frame body 700 . The frame body 700 is against between the driving substrate 100 and the protective cover 500 , and the frame body 700 is located outside the pixel defining structure 400 . In other words, box 700 defines structure 400 around pixels. In this way, the frame body 700 can further prevent moisture and/or oxygen from penetrating into the pixel defining structure 400 . In some embodiments, the frame body 700 can be a sealant, but the present invention is not limited thereto.

于部分实施方式中,驱动基板100可为薄膜晶体管阵列(TFT array)基板。进一步来说,如图1所示,驱动基板100可包含承载基板120、栅极电极130、源极电极140、漏极电极150、以及主动层160。栅极电极130、源极电极140与漏极电极150均是位于承载基板120上方,而被承载基板120所承载。栅极电极130、源极电极140与漏极电极150是相互分隔的。主动层160覆盖栅极电极130。源极电极140覆盖部分的主动层160,漏极电极150覆盖另一部分的主动层160。如此一来,栅极电极130、源极电极140、漏极电极150、以及主动层160可共同构成薄膜晶体管。像素电极110可电性连接漏极电极150,故有机发光二极管结构200可受薄膜晶体管所控制。于部分实施方式中,像素电极110可电性连接源极电极140,而非电性连接漏极电极150。In some implementations, the driving substrate 100 may be a thin film transistor array (TFT array) substrate. Further, as shown in FIG. 1 , the driving substrate 100 may include a carrier substrate 120 , a gate electrode 130 , a source electrode 140 , a drain electrode 150 , and an active layer 160 . The gate electrode 130 , the source electrode 140 and the drain electrode 150 are located above the carrier substrate 120 and are carried by the carrier substrate 120 . The gate electrode 130 , the source electrode 140 and the drain electrode 150 are separated from each other. The active layer 160 covers the gate electrode 130 . The source electrode 140 covers a part of the active layer 160 , and the drain electrode 150 covers another part of the active layer 160 . In this way, the gate electrode 130 , the source electrode 140 , the drain electrode 150 , and the active layer 160 can jointly form a thin film transistor. The pixel electrode 110 can be electrically connected to the drain electrode 150, so the OLED structure 200 can be controlled by a thin film transistor. In some embodiments, the pixel electrode 110 may be electrically connected to the source electrode 140 instead of electrically connected to the drain electrode 150 .

于部分实施方式中,驱动基板100包含多个薄膜晶体管与对应的多个像素电极110,有机发光二极管结构200与覆盖电极300的数量则与像素电极110相同。如此一来,有机发光二极管显示装置可利用多个有机发光二极管结构200来做为多个像素,以利画面的显示。In some embodiments, the driving substrate 100 includes a plurality of thin film transistors and corresponding plurality of pixel electrodes 110 , and the number of the OLED structures 200 and the cover electrodes 300 is the same as that of the pixel electrodes 110 . In this way, the organic light emitting diode display device can use a plurality of organic light emitting diode structures 200 as a plurality of pixels to facilitate image display.

于部分实施方式中,有机发光二极管结构200可包含依序层叠的空穴注入层(HoleInjection Layer;HIL)、空穴传输层(Hole Transporting Layer;HTL)、电子阻挡层(Electron Blocking Layer;EBL)、发光层、空穴阻挡层(Hole Blocking Layer;HBL)、电子传输层(Electron Transporting Layer;ETL)、与电子注入层(Electron InjectionLayer;EIL)。于部分实施方式中,可根据像素所需呈现的颜色(如红色、绿色或蓝色)而采用对应的有机材料来制作发光层。于部分实施方式中,像素电极110可电性连接空穴注入层,覆盖电极300可电性连接电子注入层。于部分实施方式中,像素电极110可电性连接电子注入层。覆盖电极300可电性连接空穴注入层。In some embodiments, the OLED structure 200 may include a hole injection layer (Hole Injection Layer; HIL), a hole transport layer (Hole Transporting Layer; HTL), and an electron blocking layer (Electron Blocking Layer; EBL) stacked in sequence. , a light emitting layer, a hole blocking layer (Hole Blocking Layer; HBL), an electron transporting layer (Electron Transporting Layer; ETL), and an electron injection layer (Electron Injection Layer; EIL). In some embodiments, corresponding organic materials can be used to make the light emitting layer according to the color (such as red, green or blue) required by the pixel. In some embodiments, the pixel electrode 110 can be electrically connected to the hole injection layer, and the covering electrode 300 can be electrically connected to the electron injection layer. In some embodiments, the pixel electrode 110 can be electrically connected to the electron injection layer. The cover electrode 300 can be electrically connected to the hole injection layer.

于部分实施方式中,覆盖电极300的材质可为金属或金属氧化物,如铝、银、镁银合金、氧化铟锡(ITO)或氧化铟锌(IZO)。应了解到,当覆盖电极300的材质为不透光的金属时,其尺寸可足够小到肉眼不可见的程度。举例来说,覆盖电极300的材质可为纳米银,其虽为不透光材料,但纳米级的尺寸使得肉眼无法观之。如此一来,使用者仍可观看到覆盖电极300下方的有机发光二极管结构200的光线。In some embodiments, the covering electrode 300 can be made of metal or metal oxide, such as aluminum, silver, magnesium-silver alloy, indium tin oxide (ITO) or indium zinc oxide (IZO). It should be understood that when the material of the covering electrode 300 is opaque metal, its size can be small enough to be invisible to the naked eye. For example, the material of the covering electrode 300 can be nano-silver, although it is an opaque material, its nanoscale size makes it invisible to the naked eye. In this way, the user can still see the light covering the OLED structure 200 under the electrode 300 .

图2绘示依据本发明另一实施方式的有机发光二极管显示装置的剖面示意图。如图2所示,本实施方式与前述实施方式之间的主要差异在于像素定义结构400a与前述像素定义结构400不同。具体来说,像素定义结构400a包含透光体410、反射体420以及不透光体430。透光体410是位于驱动基板100上。透光体410定义容置空间S,并接触有机发光二极管结构200与覆盖电极300。透光体410抵顶保护盖500。反射体420是位于驱动基板100上。至少部分的不透光体430是设置于反射体420上以位于反射体420与保护盖500之间。如此一来,该部分的不透光体430可阻挡穿过保护盖500的环境光遭遇到反射体420,故可防止反射体420反射环境光。由于不透光体430可降低环境光的反射,故于本实施方式中,可无需采用图1所示的偏振片600。于其他实施方式中,有机发光二极管显示装置亦可一并包含不透光体430与偏振片600,以更佳地防止环境光的反射。于部分实施方式中,不透光体430可吸收光线而不反射光线,以免反射环境光。FIG. 2 is a schematic cross-sectional view of an OLED display device according to another embodiment of the present invention. As shown in FIG. 2 , the main difference between this embodiment and the foregoing embodiments is that the pixel definition structure 400 a is different from the foregoing pixel definition structure 400 . Specifically, the pixel definition structure 400a includes a transparent body 410 , a reflector 420 and an opaque body 430 . The transparent body 410 is located on the driving substrate 100 . The transparent body 410 defines the accommodation space S, and contacts the OLED structure 200 and the covering electrode 300 . The transparent body 410 is against the protective cover 500 . The reflector 420 is located on the driving substrate 100 . At least part of the opaque body 430 is disposed on the reflector 420 to be located between the reflector 420 and the protective cover 500 . In this way, the part of the opaque body 430 can prevent the ambient light passing through the protective cover 500 from encountering the reflector 420 , thus preventing the reflector 420 from reflecting the ambient light. Since the opaque body 430 can reduce the reflection of ambient light, the polarizer 600 shown in FIG. 1 is unnecessary in this embodiment. In other embodiments, the OLED display device may also include the opaque body 430 and the polarizer 600 to better prevent reflection of ambient light. In some embodiments, the opaque body 430 can absorb light but not reflect light, so as to avoid reflecting ambient light.

于部分实施方式中,像素定义结构400a的制作方法如下。首先,在驱动基板100上沉积反射体420的材料,以形成反射体420。接着,在驱动基板100与反射体420上,沉积不透光体430的材料,以形成不透光体430。最后,于不透光体430与反射体420上,沉积透光体410的材料,以形成透光体410。于部分实施方式中,上述沉积方式可包含物理气相沉积(如蒸镀或溅镀)或化学气相沉积或是湿式印刷涂布的方式沉积,但本发明不以此为限。In some embodiments, the fabrication method of the pixel definition structure 400a is as follows. First, the material of the reflector 420 is deposited on the driving substrate 100 to form the reflector 420 . Next, the material of the opaque body 430 is deposited on the driving substrate 100 and the reflector 420 to form the opaque body 430 . Finally, the material of the transparent body 410 is deposited on the opaque body 430 and the reflector 420 to form the transparent body 410 . In some embodiments, the above-mentioned deposition methods may include physical vapor deposition (such as evaporation or sputtering), chemical vapor deposition, or wet printing coating deposition, but the present invention is not limited thereto.

本实施方式的其他技术特征与图1所示实施方式相似,故不重复叙述。Other technical features of this embodiment are similar to those of the embodiment shown in FIG. 1 , so they will not be described repeatedly.

图3绘示依据本发明另一实施方式的有机发光二极管显示装置的剖面示意图。如图3所示,本实施方式与前述实施方式之间的主要差异在于本实施方式包含透光填充体800。透光填充体800是填充于覆盖电极300与保护盖500之间的间隙中,其可防止有机发光二极管结构200发出的光线在覆盖电极300的上表面发生全反射。举例来说,透光填充体800的材质与覆盖电极300的材质的折射率差异,可小于覆盖电极300的材质与气体(如氮气或空气)的折射率差异,以增加全反射所需的临界角,而降低全反射的发生率。于部分实施方式中,透光填充体800的材质的折射率可大于或等于覆盖电极300的材质的折射率,以更有效地防止全反射。举例来说,透光填充体800可为光学粘着剂(Optical Clear Adhesive;OCA)或光学树脂(Optical Clear Resin;OCR)或具高折射率的吸湿材料,可进一步提高元件的信赖性,但本发明不以此为限。FIG. 3 is a schematic cross-sectional view of an OLED display device according to another embodiment of the present invention. As shown in FIG. 3 , the main difference between this embodiment and the previous embodiments is that this embodiment includes a light-transmitting filling body 800 . The transparent filler 800 is filled in the gap between the cover electrode 300 and the protective cover 500 , which can prevent the light emitted from the OLED structure 200 from being totally reflected on the upper surface of the cover electrode 300 . For example, the difference in refractive index between the material of the light-transmitting filler 800 and the material covering the electrode 300 can be smaller than the difference in refractive index between the material covering the electrode 300 and the gas (such as nitrogen or air), so as to increase the threshold required for total reflection. Angle, and reduce the incidence of total reflection. In some implementations, the refractive index of the material of the transparent filler 800 may be greater than or equal to the refractive index of the material covering the electrode 300 , so as to prevent total reflection more effectively. For example, the light-transmitting filler 800 can be an optical adhesive (Optical Clear Adhesive; OCA) or an optical resin (Optical Clear Resin; OCR) or a hygroscopic material with a high refractive index, which can further improve the reliability of the element, but this The invention is not limited thereto.

于本实施方式中,像素定义结构400b可为不透光结构或反射结构。换句话说,像素定义结构400b的材质可为不透光材料或反射材料。于部分实施方式中,像素定义结构400b的制作方法可为将不透光材料与反射材料沉积于驱动基板100上。上述沉积方式可包含物理气相沉积(如蒸镀或溅镀)或化学气相沉积或是湿式印刷涂布的方式沉积,但本发明不以此为限。In this embodiment, the pixel definition structure 400b can be an opaque structure or a reflective structure. In other words, the material of the pixel defining structure 400b can be opaque material or reflective material. In some implementations, the pixel definition structure 400b is fabricated by depositing opaque material and reflective material on the driving substrate 100 . The above-mentioned deposition methods may include physical vapor deposition (such as evaporation or sputtering), chemical vapor deposition, or wet printing coating deposition, but the present invention is not limited thereto.

本实施方式的其他技术特征与图1所示实施方式相似,故不重复叙述。Other technical features of this embodiment are similar to those of the embodiment shown in FIG. 1 , so they will not be described repeatedly.

虽然本发明已以实施方式揭露如上,然其并非用以限定本发明,任何熟悉此技艺者,在不脱离本发明的精神和范围内,当可作各种的更动与润饰,因此本发明的保护范围当视所附的权利要求书所界定的范围为准。Although the present invention has been disclosed above in terms of implementation, it is not intended to limit the present invention. Any skilled person can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection should be based on the scope defined by the appended claims.

Claims (7)

1.一种有机发光二极管显示装置,其特征在于,包含:1. An organic light emitting diode display device, characterized in that it comprises: 一驱动基板,包含至少一像素电极;A driving substrate, including at least one pixel electrode; 至少一有机发光二极管结构,设置于该像素电极上;at least one organic light emitting diode structure disposed on the pixel electrode; 至少一覆盖电极,该有机发光二极管结构是位于该像素电极与该覆盖电极之间;at least one covering electrode, the organic light emitting diode structure is located between the pixel electrode and the covering electrode; 至少一像素定义结构,设置于该驱动基板上,该像素定义结构具有一容置空间,该有机发光二极管结构与该覆盖电极是位于该容置空间中;以及At least one pixel defining structure is disposed on the driving substrate, the pixel defining structure has an accommodating space, and the organic light emitting diode structure and the cover electrode are located in the accommodating space; and 一保护盖,覆盖该驱动基板、该有机发光二极管结构、该覆盖电极与该像素定义结构,其中该像素定义结构抵顶该保护盖;a protective cover covering the driving substrate, the organic light emitting diode structure, the cover electrode and the pixel definition structure, wherein the pixel definition structure is against the protection cover; 其中,该像素定义结构是用以将该有机发光二极管结构所发出的光线反射回该容置空间中,且该像素定义结构包含:Wherein, the pixel definition structure is used to reflect the light emitted by the organic light emitting diode structure back into the accommodating space, and the pixel definition structure includes: 一透光体,位于该驱动基板上并定义该容置空间;A light-transmitting body is located on the driving substrate and defines the accommodating space; 一反射体,位于该驱动基板上;以及a reflector located on the drive substrate; and 一不透光体,至少部分的该不透光体是设置于该反射体上以位于该反射体与该保护盖之间。An opaque body, at least part of the opaque body is arranged on the reflector so as to be located between the reflector and the protective cover. 2.根据权利要求1所述的有机发光二极管显示装置,其特征在于,该反射体至该保护盖的最短距离是小于该有机发光二极管结构至该保护盖的最短距离。2 . The OLED display device according to claim 1 , wherein the shortest distance from the reflector to the protective cover is smaller than the shortest distance from the OLED structure to the protective cover. 3.根据权利要求1所述的有机发光二极管显示装置,其特征在于,还包含一偏振片,设置于该保护盖上,并且该像素定义结构的该反射体是位于该偏振片与该驱动基板之间。3. The organic light emitting diode display device according to claim 1, further comprising a polarizer disposed on the protective cover, and the reflector of the pixel definition structure is located between the polarizer and the driving substrate between. 4.根据权利要求1所述的有机发光二极管显示装置,其特征在于,还包含一透光填充体,该透光填充体是填充于该覆盖电极与该保护盖之间的一间隙中,且该透光填充体的材质与该覆盖电极的材质的折射率差异,小于该覆盖电极的材质与气体的折射率差异,其中该气体为氮气或空气。4. The organic light emitting diode display device according to claim 1, further comprising a light-transmitting filling body, the light-transmitting filling body is filled in a gap between the covering electrode and the protective cover, and The difference in refractive index between the material of the light-transmitting filler and the material covering the electrode is smaller than the difference in refractive index between the material of the covering electrode and the gas, wherein the gas is nitrogen or air. 5.根据权利要求1所述的有机发光二极管显示装置,其特征在于,还包含一透光填充体,该透光填充体是填充于该覆盖电极与该保护盖之间的一间隙中,其中该透光填充体的材质的折射率是大于或等于该覆盖电极的材质的折射率。5. The organic light emitting diode display device according to claim 1, further comprising a light-transmitting filling body, the light-transmitting filling body is filled in a gap between the covering electrode and the protective cover, wherein The refractive index of the material of the transparent filling body is greater than or equal to the refractive index of the material of the covering electrode. 6.根据权利要求1所述的有机发光二极管显示装置,其特征在于,该像素定义结构为不透光材料结构或反射材料结构。6 . The organic light emitting diode display device according to claim 1 , wherein the pixel defining structure is an opaque material structure or a reflective material structure. 7.根据权利要求1所述的有机发光二极管显示装置,其特征在于,还包含一框体,抵顶于该驱动基板与该保护盖之间,并位于该像素定义结构的外侧。7 . The organic light emitting diode display device according to claim 1 , further comprising a frame, abutted between the driving substrate and the protective cover, and located outside the pixel defining structure.
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Publication number Priority date Publication date Assignee Title
CN107885005B (en) 2016-09-30 2021-04-30 元太科技工业股份有限公司 Waterproof display device
TWI595461B (en) * 2016-09-30 2017-08-11 元太科技工業股份有限公司 Waterproof display apparatus
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US20190033658A1 (en) * 2017-07-27 2019-01-31 Advanced Optoelectronic Technology, Inc. Liquid crystal display module
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307528B1 (en) * 1997-12-08 2001-10-23 Hughes Electronics Corporation Contrast organic light-emitting display
CN1383352A (en) * 2001-04-23 2002-12-04 株式会社半导体能源研究所 Display device and its mfg. method
TW201306249A (en) * 2011-06-29 2013-02-01 Samsung Display Co Ltd Methods of forming inclined structures on insulation layers, organic light emitting display devices with the inclined structures and methods of manufacturing the organic light emitting display devices
CN103915482A (en) * 2014-03-27 2014-07-09 京东方科技集团股份有限公司 Organic electroluminescent display panel, manufacturing method thereof and display device
CN205319157U (en) * 2015-12-23 2016-06-15 宸鸿光电科技股份有限公司 Organic light emitting diode display device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307528B1 (en) * 1997-12-08 2001-10-23 Hughes Electronics Corporation Contrast organic light-emitting display
CN1383352A (en) * 2001-04-23 2002-12-04 株式会社半导体能源研究所 Display device and its mfg. method
TW201306249A (en) * 2011-06-29 2013-02-01 Samsung Display Co Ltd Methods of forming inclined structures on insulation layers, organic light emitting display devices with the inclined structures and methods of manufacturing the organic light emitting display devices
CN103915482A (en) * 2014-03-27 2014-07-09 京东方科技集团股份有限公司 Organic electroluminescent display panel, manufacturing method thereof and display device
CN205319157U (en) * 2015-12-23 2016-06-15 宸鸿光电科技股份有限公司 Organic light emitting diode display device

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