CN106903979B - Plane transfer printing device - Google Patents
Plane transfer printing device Download PDFInfo
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- CN106903979B CN106903979B CN201710144646.0A CN201710144646A CN106903979B CN 106903979 B CN106903979 B CN 106903979B CN 201710144646 A CN201710144646 A CN 201710144646A CN 106903979 B CN106903979 B CN 106903979B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F16/00—Transfer printing apparatus
- B41F16/0006—Transfer printing apparatus for printing from an inked or preprinted foil or band
- B41F16/004—Presses of the reciprocating type
- B41F16/0046—Presses of the reciprocating type with means for applying print under heat and pressure, e.g. using heat activable adhesive
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41P—INDEXING SCHEME RELATING TO PRINTING, LINING MACHINES, TYPEWRITERS, AND TO STAMPS
- B41P2217/00—Printing machines of special types or for particular purposes
- B41P2217/50—Printing presses for particular purposes
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Abstract
本发明涉及热转印技术领域,公开了一种平面转印装置。包括上台面、下台面、活动式支撑杆、第一高频震荡电路、第二高频震荡电路和支撑台,所述上台面设置在支撑台上,所述上台面和下台面平行并通过活动式支撑杆连接,所述上台面和下台面压合时相互重叠,所述第一高频震荡电路和第二高频震荡电路设置在支撑台内,所述第一高频震荡电路的谐振线圈设置在下台面,所述第二高频震荡电路的谐振线圈设置在上台面,所述上台面和下台面压合时所述第一谐振线圈和第二谐振线圈重叠。转印时上下台面间放置的覆铜板形成涡流产热,覆铜板的温度稳定,一次完成转印。
The invention relates to the technical field of heat transfer printing, and discloses a planar transfer printing device. It includes an upper table, a lower table, a movable support rod, a first high-frequency oscillating circuit, a second high-frequency oscillating circuit and a support platform, the upper table is set on the support platform, and the upper table and the lower table are parallel and passed through the movable The upper table and the lower table overlap each other when they are pressed together, the first high-frequency oscillating circuit and the second high-frequency oscillating circuit are arranged in the support platform, and the resonant coil of the first high-frequency oscillating circuit It is arranged on the lower table, and the resonant coil of the second high-frequency oscillating circuit is arranged on the upper table, and the first resonant coil and the second resonant coil overlap when the upper table and the lower table are pressed together. When transferring, the copper clad laminates placed between the upper and lower tables form eddy currents to generate heat, the temperature of the copper clad laminates is stable, and the transfer is completed at one time.
Description
技术领域technical field
本发明涉及热转印技术领域,特别是一种平面转印装置。The invention relates to the technical field of heat transfer printing, in particular to a planar transfer printing device.
背景技术Background technique
胶轴式转印机是目前各种实验室普遍采用的转印设备,其通过电热辐射原件以及反射装置向胶轴空隙方向发射主拨段为2.5~15μm的红外线辐射实现传热。利用胶轴的转动实现大面积的转印需求,利用该方法转印需要高温高压力才能转印完全转印,但是由于胶轴上的温度分布不均匀,转印过程中覆铜板的温度容易变化,致使图案转印不完全,需要二次转印;另外,胶轴转印机只要打开设备便会升温从而产生大量能耗,而且升温过程需要导热介质也会引起能量损耗;其次,通过介质导热也会使转印效率较低。因此,其能量传递方式就限制了其效率以及加热面积。如果能提供一种小型的加热面积可控、能量传递过程中损耗少的加热设备,将解决上述困扰,给人们生活带来便利。Rubber shaft transfer printing machine is a transfer printing equipment commonly used in various laboratories at present. It emits infrared radiation with a main dial of 2.5-15 μm in the direction of the gap of the rubber shaft through the electrothermal radiation element and the reflection device to achieve heat transfer. Use the rotation of the rubber shaft to achieve large-area transfer printing requirements. Using this method to transfer printing requires high temperature and high pressure to transfer completely. However, due to the uneven temperature distribution on the rubber shaft, the temperature of the copper clad laminate is easy to change during the transfer process. , resulting in incomplete pattern transfer, requiring secondary transfer; in addition, as long as the rubber shaft transfer machine is turned on, it will heat up and generate a lot of energy consumption, and the heating process requires a heat-conducting medium that will also cause energy loss; secondly, heat conduction through the medium It also makes the transfer efficiency lower. Therefore, its energy transfer method limits its efficiency and heating area. If a small-scale heating device with controllable heating area and less loss in the energy transfer process can be provided, the above problems will be solved and convenience will be brought to people's lives.
发明内容Contents of the invention
本发明所要解决的技术问题是:针对上述存在的问题,提供了一种平面转印装置。The technical problem to be solved by the present invention is to provide a planar transfer printing device for the above existing problems.
本发明采用的技术方案如下:一种平面转印装置,具体包括上台面、下台面、活动式支撑杆、第一高频震荡电路、第二高频震荡电路和支撑台,所述上台面设置在支撑台上,所述上台面和下台面平行设置,所述上台面和下台面之间通过活动式支撑杆连接,所述上台面和下台面压合时相互重叠,所述第一高频震荡电路和第二高频震荡电路设置在支撑台内,所述第一高频震荡电路的第一谐振线圈设置在下台面,所述第二高频震荡电路的第二谐振线圈设置在上台面,所述上台面和下台面压合时所述第一谐振线圈和第二谐振线圈重叠。所述上台面和下台面距离最远时,所述上台面和下台面部分重叠,此时上台面和下台面处于分离状态。The technical scheme adopted by the present invention is as follows: a planar transfer printing device, which specifically includes an upper table, a lower table, a movable support rod, a first high-frequency oscillation circuit, a second high-frequency oscillation circuit and a support platform, and the upper table is set On the support table, the upper table and the lower table are arranged in parallel, and the upper table and the lower table are connected by movable support rods. When the upper table and the lower table are pressed together, they overlap each other. The first high-frequency The oscillating circuit and the second high-frequency oscillating circuit are arranged in the support platform, the first resonant coil of the first high-frequency oscillating circuit is arranged on the lower table, and the second resonant coil of the second high-frequency oscillating circuit is arranged on the upper table, The first resonant coil and the second resonant coil overlap when the upper table and the lower table are pressed together. When the distance between the upper table and the lower table is the farthest, the upper table and the lower table partially overlap, and at this time the upper table and the lower table are in a separated state.
进一步的,所述活动式支撑杆包括相互平行的第一支撑轴、第二支撑轴、第三支撑轴和第四支撑轴,所述第一支撑轴、第二支撑轴、第三支撑轴和第四支撑轴与上台面和下台面的两条对侧边连接,所述上台面和下台面距离最远时,所述第一支撑轴、第二支撑轴、第三支撑轴和第四支撑轴垂直于上台面。Further, the movable support rod includes a first support shaft, a second support shaft, a third support shaft and a fourth support shaft parallel to each other, the first support shaft, the second support shaft, the third support shaft and the The fourth support shaft is connected to two opposite sides of the upper table and the lower table. When the distance between the upper table and the lower table is the farthest, the first support shaft, the second support shaft, the third support shaft and the fourth support shaft The axis is perpendicular to the upper table.
进一步的,所述第一支撑轴和第二支撑轴的一端分别铰接在上台面的两条对侧边的一端,所述第一支撑轴和第二支撑轴的另一端分别铰接在下台面的两条对侧边的非端部,所述第三支撑轴和第四支撑轴的一端分别铰接在上台面的两条对侧边的非端部,所述第三支撑轴和第四支撑轴的另一端分别铰接在下台面的两条对侧边的一部,所述第一支撑轴、第二支撑轴、第三支撑轴和第四支撑轴均可以沿着铰接处的铰接点在90°范围内活动。Further, one end of the first support shaft and the second support shaft are respectively hinged to one end of two opposite sides of the upper table, and the other ends of the first support shaft and the second support shaft are respectively hinged to two ends of the lower table. The non-ends of the opposite sides of the bar, one end of the third support shaft and the fourth support shaft are respectively hinged on the non-ends of the two opposite sides of the upper table, the third support shaft and the fourth support shaft The other ends are respectively hinged on one part of the two opposite sides of the lower table, and the first support shaft, the second support shaft, the third support shaft and the fourth support shaft can all be within a range of 90° along the hinge point at the hinge. internal activities.
进一步的,所述下台面的上表面具有第一凹槽,所述第一谐振线圈设置在第一凹槽内,所述上台面的下表面具有第二凹槽,所述第二谐振线圈设置在第二凹槽内。Further, the upper surface of the lower table has a first groove, the first resonant coil is arranged in the first groove, the lower surface of the upper table has a second groove, and the second resonant coil is arranged in the second groove.
进一步的,所述第一谐振线圈和第二谐振线圈分别粘附于所述下台面的上表面和所述上台面的下表面。Further, the first resonant coil and the second resonant coil are respectively adhered to the upper surface of the lower table and the lower surface of the upper table.
进一步的,所述第一高频震荡电路和第二高频震荡电路均采用零电压开关电路(ZVS)。Further, both the first high-frequency oscillation circuit and the second high-frequency oscillation circuit adopt a zero-voltage switching circuit (ZVS).
进一步的,所述零电压开关电路包括电源、第一电阻、第二电阻、第三电阻、第四电阻、第一电容、第一高频线圈、第一晶体管、第二晶体管、第三二极管、第四二极管、第一二极管、第六二极管、第二电感、第三电感;所述第一电阻的第一端与第二电感的第一端、第四电阻的第一端以及电源正极连接,所述第一电阻的第二端与第二电阻的第一端、第一二极管第二端、第三二极管的第一端、第一晶体管的G极连接,所述第二电感的第二端与第一高频线圈的第一端、第三电感的第一端连接,所述第四电阻的第二端与第三电阻的第二端、第六二极管的第一端、第四二极管的第二端、第二晶体管的G极连接,所述第一二极管的第一端与第三电感的第一端、第一电容的第二端、第一高频线圈的第二端、第二晶体管的D极连接,所述第六二极管的第二端与第二电感下端、第一电容的第一端、第一高频线圈的第一端、第一晶体管的D极连接,所述第二电阻的第二端、第三二极管的第二端、第一晶体管的S极、第二二极管的第二端、第三电阻的第一端、第四二极管的第一端、第二晶体管的S极、第五二极管的第一端接入电源地,其中第二电感和第三电感为续流电感,所述第一高频线圈为谐振线圈。Further, the zero-voltage switching circuit includes a power supply, a first resistor, a second resistor, a third resistor, a fourth resistor, a first capacitor, a first high-frequency coil, a first transistor, a second transistor, and a third diode Tube, fourth diode, first diode, sixth diode, second inductance, third inductance; the first end of the first resistor and the first end of the second inductance, the fourth resistor The first end is connected to the positive pole of the power supply, the second end of the first resistor is connected to the first end of the second resistor, the second end of the first diode, the first end of the third diode, and the G of the first transistor. pole connection, the second end of the second inductance is connected with the first end of the first high-frequency coil and the first end of the third inductance, the second end of the fourth resistor is connected with the second end of the third resistor, The first end of the sixth diode, the second end of the fourth diode, and the G pole of the second transistor are connected, and the first end of the first diode is connected to the first end of the third inductor, the first The second end of the capacitor, the second end of the first high-frequency coil, and the D pole of the second transistor are connected, and the second end of the sixth diode is connected to the lower end of the second inductor, the first end of the first capacitor, and the second end of the second transistor. The first end of a high-frequency coil is connected to the D pole of the first transistor, the second end of the second resistor, the second end of the third diode, the S pole of the first transistor, and the second diode The second end, the first end of the third resistor, the first end of the fourth diode, the S pole of the second transistor, and the first end of the fifth diode are connected to the power ground, wherein the second inductor and the third The inductance is a freewheeling inductance, and the first high frequency coil is a resonant coil.
进一步的,所述零电压开关电路还包括保护电路,所述保护电路耦接于供电端和第一高频线圈的第一端之间,包括基准电压产生电路和反馈环路,所述基准电压产生电路包括并联电路和第七电阻,所述并联电路包括并联的第七齐纳二极管、第八电阻和第二电容,所述并联电路的第一端接地,所述并联电路的第二端耦接第七电阻的第一端,所述反馈环路包括第三晶体管、第一放大器、第二放大器和第九电阻,所述第三晶体管的第一端耦接供电端,所述第三晶体管的第二端耦接第一高频线圈的第一端,所述第三晶体管的控制端耦接第一放大器的输出端,所述第一放大器的第二输入端耦接并联电路的第二端,所述第一放大器的第一输入端耦接第二放大器的输出端,所述第二放大器的输入端耦接第一高频线圈的第一端,所述第二放大器的输出端耦接第九电阻后耦接地,所述第三晶体管为场效应晶体管或者MOS晶体管或者三极管。Further, the zero-voltage switching circuit further includes a protection circuit, the protection circuit is coupled between the power supply end and the first end of the first high-frequency coil, and includes a reference voltage generation circuit and a feedback loop, the reference voltage The generating circuit includes a parallel circuit and a seventh resistor, the parallel circuit includes a seventh Zener diode, an eighth resistor and a second capacitor connected in parallel, the first end of the parallel circuit is grounded, and the second end of the parallel circuit is coupled to connected to the first end of the seventh resistor, the feedback loop includes a third transistor, a first amplifier, a second amplifier and a ninth resistor, the first end of the third transistor is coupled to the power supply end, and the third transistor The second terminal of the third transistor is coupled to the first terminal of the first high-frequency coil, the control terminal of the third transistor is coupled to the output terminal of the first amplifier, and the second input terminal of the first amplifier is coupled to the second terminal of the parallel circuit. end, the first input end of the first amplifier is coupled to the output end of the second amplifier, the input end of the second amplifier is coupled to the first end of the first high frequency coil, and the output end of the second amplifier is coupled The ninth resistor is coupled to ground, and the third transistor is a field effect transistor or a MOS transistor or a triode.
进一步的,所述保护电路还包括电阻网络、比较器和放电通路,所述电阻网络包括第十电阻、第十一电阻、第十二电阻和第十三电阻,所述第十电阻的第一端耦接供电端,所述第十电阻的第二端耦接第十一电阻后耦接地,所述第十二电阻的第一端耦接供电端,所述第十二电阻的第二端耦接第十三电阻后耦接地,所述第十电阻的第二端耦接比较器的第一输入端,所述第十二电阻的第二端耦接比较器的第二输入端,放电通路包括串联的N-MOS晶体管和第十四电阻,所述比较器的输出端连接N-MOS晶体管的控制端,所述N-MOS晶体管的第二端耦接地,所述N-MOS晶体管的第一端耦接地十四电阻的第一端,所述第十四电阻的第二端耦接第一放大器的第二输入端。Further, the protection circuit further includes a resistor network, a comparator, and a discharge path, the resistor network includes a tenth resistor, an eleventh resistor, a twelfth resistor, and a thirteenth resistor, and the first resistor of the tenth resistor terminal is coupled to the power supply terminal, the second terminal of the tenth resistor is coupled to the eleventh resistor and then grounded, the first terminal of the twelfth resistor is coupled to the power supply terminal, and the second terminal of the twelfth resistor After being coupled to the thirteenth resistor, it is coupled to ground, the second end of the tenth resistor is coupled to the first input end of the comparator, the second end of the twelfth resistor is coupled to the second input end of the comparator, and the discharge The path includes an N-MOS transistor connected in series and a fourteenth resistor, the output end of the comparator is connected to the control end of the N-MOS transistor, the second end of the N-MOS transistor is coupled to ground, and the N-MOS transistor The first end is coupled to the first end of the fourteenth resistor, and the second end of the fourteenth resistor is coupled to the second input end of the first amplifier.
进一步的,所述第十电阻和第十二电阻均为匹配电阻,第十一电阻的温度系数大于第十三电阻的温度系数,常温下第十一电阻的阻值小于第十三电阻的阻值。Further, the tenth resistor and the twelfth resistor are matching resistors, the temperature coefficient of the eleventh resistor is greater than the temperature coefficient of the thirteenth resistor, and the resistance value of the eleventh resistor is smaller than that of the thirteenth resistor at normal temperature. value.
综上所述,由于采用了上述技术方案,本发明有益效果是:转印时,采用上、下台面将覆铜板夹在中间,加热过程中覆铜板的温度不会出现变化的情况,加热均匀,只需要一次就可以转印完全,避免二次转印;同时,实现了对上台面和下台面之间的覆铜板进行涡流加热,避免热传导过程中的热量耗散,提高能量转化效率。In summary, due to the adoption of the above technical solution, the beneficial effects of the present invention are: when transferring, the upper and lower tables are used to sandwich the copper clad laminate, the temperature of the copper clad laminate will not change during the heating process, and the heating is uniform , It only needs one time to complete the transfer, avoiding the second transfer; at the same time, it realizes the eddy current heating of the copper clad laminate between the upper table and the lower table, avoids heat dissipation during heat conduction, and improves energy conversion efficiency.
附图说明Description of drawings
图1是本发明平面转印装置未压合时的结构示意图。Fig. 1 is a schematic diagram of the structure of the planar transfer device of the present invention when it is not pressed.
图2是本发明平面转印装置压合时的结构示意图。Fig. 2 is a structural schematic diagram of the planar transfer printing device of the present invention during lamination.
图3是本发明零电压开关电路200的结构示意图。FIG. 3 is a schematic structural diagram of a zero voltage switching circuit 200 of the present invention.
图4是本发明具有保护电路的零电压开关电路300结构示意图。FIG. 4 is a schematic structural diagram of a zero voltage switching circuit 300 with a protection circuit according to the present invention.
图5是本发明保护电路400的结构示意图。FIG. 5 is a schematic structural diagram of a
图6是图5中保护电路进一步优化的保护电路500结构示意图。FIG. 6 is a schematic structural diagram of a further optimized
图7是本发明一个实施例的温度调节曲线。Fig. 7 is a temperature adjustment curve of an embodiment of the present invention.
附图标记:支撑台-1,轴承-2,第一谐振线圈-3,第二谐振线圈-4,上台面-5,覆铜板-6,下台面-7,第一支撑轴-8,第三支撑轴-9。Reference signs: support table-1, bearing-2, first resonant coil-3, second resonant coil-4, upper table-5, copper clad laminate-6, lower table-7, first support shaft-8, second Three supporting shafts-9.
具体实施方式Detailed ways
下面结合附图,对本发明作详细的说明。Below in conjunction with accompanying drawing, the present invention is described in detail.
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
如图1-2所示,一种平面转印装置,具体包括上台面5、下台面7、活动式支撑杆、第一高频震荡电路、第二高频震荡电路和支撑台1,所述上台面5设置在支撑台1上,所述上台面5和下台面7平行设置,所述上台面5和下台面7之间通过活动式支撑杆连接,所述上台面5和下台面7压合时相互重叠,所述上台面5和下台面7距离最远时,所述上台面5和下台面7部分重叠,所述第一高频震荡电路和第二高频震荡电路设置在支撑台1内,所述第一高频震荡电路的第一谐振线圈3设置在下台面7,所述第二高频震荡电路的第二谐振线圈4设置在上台面5,所述上台面5和下台面7压合时所述第一谐振线圈3和第二谐振线圈4重叠。需要转印时,将上台面5压合在下台面7上,并放入覆铜板6,所述第一高频震荡电路和第二高频震荡电路发生谐振使第一谐振线圈3和第二谐振线圈4的电压按正弦规律变化,放入覆铜板6时实现涡流产热,将图案转印到覆铜板6上;采用的涡流产热均匀,覆铜板6上的温度不会变化,保证一次性能够转印完全;同时涡流产热不需要导热介质,减少能力消耗。As shown in Figure 1-2, a planar transfer printing device specifically includes an upper table 5, a lower table 7, a movable support rod, a first high-frequency oscillating circuit, a second high-frequency oscillating circuit, and a support table 1. The upper table 5 is arranged on the support table 1, the upper table 5 and the lower table 7 are arranged in parallel, the upper table 5 and the lower table 7 are connected by movable support rods, and the upper table 5 and the lower table 7 are pressed When the distance between the upper table 5 and the lower table 7 is the farthest, the upper table 5 and the lower table 7 partially overlap, and the first high-frequency oscillation circuit and the second high-frequency oscillation circuit are arranged on the supporting
所述活动式支撑杆包括相互平行的第一支撑轴8、第二支撑轴、第三支撑轴9和第四支撑轴,所述第一支撑轴8、第二支撑轴、第三支撑轴9和第四支撑轴与上台面5和下台面7的两条对侧边连接,所述上台面5和下台面7距离最远时,所述第一支撑轴8、第二支撑轴、第三支撑轴9和第四支撑轴垂直于上台面。所述活动式支撑杆可以使上台面5和下台面7灵活的处于压合状态和分离的部分重合状态,仅采用四根支撑轴实现,结构简单灵活。The movable support rod comprises a
所述第一支撑轴8和第二支撑轴的一端分别铰接在上台面5的两条对侧边的一端,所述第一支撑轴8和第二支撑轴的另一端分别铰接在下台面7的两条对侧边的非端部,所述第三支撑轴9和第四支撑轴的一端分别铰接在上台面5的两条对侧边的非端部,所述第三支撑轴9和第四支撑轴的另一端分别铰接在下台面7的两条对侧边的一部,该处的铰接是通过轴承2实现,所述第一支撑轴8、第二支撑轴、第三支撑轴9和第四支撑轴均可以沿着铰接处的铰接点在90°范围内活动。本实施例的铰接是通过轴承实现,是上台面5和下台面7可以压合或者分离,在上台面5相对于下台面7移动时,所述第一支撑轴8、第二支撑轴、第三支撑轴9与上台面5或者下台面7形成0°~90°的角。One end of the
所述下台面7的上表面具有第一凹槽,所述第一谐振线圈3设置在第一凹槽内,所述上台面5的下表面具有第二凹槽,所述第二谐振线圈4设置在第二凹槽内。The upper surface of the lower table 7 has a first groove, the first resonant coil 3 is arranged in the first groove, the lower surface of the upper table 5 has a second groove, and the second resonant coil 4 set in the second groove.
所述第一谐振线圈3和第二谐振线圈4分别粘附于所述下台面7的上表面和所述上台面5的下表面。The first resonant coil 3 and the second resonant coil 4 are adhered to the upper surface of the lower table 7 and the lower surface of the upper table 5 respectively.
所述第一高频震荡电路和第二高频震荡电路采用零电压开关电路(ZVS)。The first high frequency oscillating circuit and the second high frequency oscillating circuit adopt a zero voltage switching circuit (ZVS).
所述零电压开关电路200包括电源、第一电阻R1、第二电阻R2、第三电阻R3、第四电阻R4、第一电容C1、第一高频线圈L1、第一晶体管Q1、第二晶体管Q2、第三二极管D3、第四二极管D4、第一二极管D1、第六二极管D6、第二电感L2、第三电感L3;所述第一电阻R1的第一端与第二电感L2的第一端、第四电阻R4的第一端以及电源正极连接,所述第一电阻R1的第二端与第二电阻R2的第一端、第一二极管D1第二端、第三二极管D3的第一端、第一晶体管Q1的G极连接,所述第二电感的L2第二端与第一高频线圈L1的第一端、第三电感L3的第一端连接,所述第四电阻R4的第二端与第三电阻R3的第二端、第六二极管D6的第一端、第四二极管D4的第二端、第二晶体管Q2的G极连接,所述第一二极管D1的第一端与第三电感L3的第一端、第一电容C1的第二端、第一高频线圈L1的第二端、第二晶体管Q2的D极连接,所述第六二极管D6的第二端与第二电感L2下端、第一电容C1的第一端、第一高频线圈L1的第一端、第一晶体管Q1的D极连接,所述第二电阻R2的第二端、第三二极管D3的第二端、第一晶体管Q1的S极、第二二极管D2的第二端、第三电阻R3的第一端、第四二极管D4的第一端、第二晶体管Q2的S极、第五二极管D5的第一端接入电源地,其中第二电感L2和第三电感L3为续流电感,所述第一高频线圈L1为谐振线圈。所述第三二极管D3和第四二极管D4为稳压二级管,所述第一二极管D1和第六二极管D6为快恢复二极管。当电源电压作用于VCC,电流开始同时通过两侧的初级并施加到第一晶体管Q1和第二晶体管Q2的漏极即D级上。电压会同时出现在第一晶体管Q1和第二晶体管Q2的栅极即G极上并开始将第一晶体管Q1和第二晶体管Q2开启。因为没有任何两个元件是完全一样的,其中一个晶体管例如第一晶体管Q1比另一个第二晶体管Q2开的快一些,更多的电流将流过第一晶体管Q1。通过导通侧的第二电感L2电流将另一侧第二晶体管Q2的G极电压拉低并开始关断它。而此时与第二晶体管Q2相连接的第三电感L3中存在电流,由于第三电感L3中的电流不能突变,此时将产生高电势通过第一高频线圈L1到达第一晶体管Q1的第一端,原本由于第一晶体管Q1导通被关断的第二晶体管Q2靠第三电感L3产生的高电势重新导通,而此时第一晶体管Q1则会关闭,然后第二电感L2又会产生高电势,并存在电流,如此反复则形成了高频震荡。因此,第一电容C1和第一高频线圈L1即谐振线圈发生LC谐振并使电压按正弦规律变化。The zero voltage switching circuit 200 includes a power supply, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first capacitor C1, a first high frequency coil L1, a first transistor Q1, a second transistor Q2, the third diode D3, the fourth diode D4, the first diode D1, the sixth diode D6, the second inductance L2, the third inductance L3; the first end of the first resistor R1 It is connected with the first terminal of the second inductor L2, the first terminal of the fourth resistor R4 and the positive pole of the power supply, the second terminal of the first resistor R1 is connected with the first terminal of the second resistor R2, the first terminal of the first diode D1 Two terminals, the first terminal of the third diode D3, and the G pole of the first transistor Q1 are connected, and the second terminal of the L2 of the second inductance is connected with the first terminal of the first high-frequency coil L1 and the terminal of the third inductance L3. The first end is connected, the second end of the fourth resistor R4 is connected with the second end of the third resistor R3, the first end of the sixth diode D6, the second end of the fourth diode D4, the second transistor The G pole of Q2 is connected, the first end of the first diode D1 is connected to the first end of the third inductance L3, the second end of the first capacitor C1, the second end of the first high frequency coil L1, the second The D pole of the transistor Q2 is connected, the second end of the sixth diode D6 is connected to the lower end of the second inductor L2, the first end of the first capacitor C1, the first end of the first high frequency coil L1, the first transistor Q1 The D pole of the second resistor R2 is connected, the second end of the second resistor R2, the second end of the third diode D3, the S pole of the first transistor Q1, the second end of the second diode D2, the third resistor R3 The first end of the first end of the fourth diode D4, the S pole of the second transistor Q2, and the first end of the fifth diode D5 are connected to the power ground, wherein the second inductance L2 and the third inductance L3 are The freewheeling inductor, the first high frequency coil L1 is a resonant coil. The third diode D3 and the fourth diode D4 are Zener diodes, and the first diode D1 and the sixth diode D6 are fast recovery diodes. When the power supply voltage acts on VCC, the current starts to pass through the primary stages on both sides simultaneously and is applied to the drains of the first transistor Q1 and the second transistor Q2, that is, the D stage. The voltage will simultaneously appear on the gates of the first transistor Q1 and the second transistor Q2, that is, G electrodes, and start to turn on the first transistor Q1 and the second transistor Q2. Since no two components are exactly the same, one of the transistors such as the first transistor Q1 turns on faster than the other second transistor Q2, more current will flow through the first transistor Q1. The current passing through the second inductor L2 on the conduction side pulls down the G electrode voltage of the second transistor Q2 on the other side and starts to turn it off. At this time, there is a current in the third inductance L3 connected to the second transistor Q2. Since the current in the third inductance L3 cannot change abruptly, a high potential will be generated at this time and pass through the first high-frequency coil L1 to reach the first transistor of the first transistor Q1. At one end, the second transistor Q2 that was originally turned off due to the conduction of the first transistor Q1 is turned on again by the high potential generated by the third inductor L3, and at this time the first transistor Q1 will be turned off, and then the second inductor L2 will be turned on again. A high potential is generated, and there is a current, and so repeated, a high-frequency oscillation is formed. Therefore, LC resonance occurs between the first capacitor C1 and the first high-frequency coil L1, that is, the resonant coil, and makes the voltage change according to the sinusoidal law.
如图4所示出根据本发明一个实施例的零电压开关电路300结构示意图,与图3所示的零电压开关电路200相比,所述零电压开关电路200还包括保护电路400,如图5所示,所述保护电路400耦接于供电端和第一高频线圈L1的第一端之间,包括基准电压产生电路和反馈环路,所述基准电压产生电路包括并联电路和第七电阻R7,所述并联电路包括并联的第七齐纳二极管D7、第八电阻R8和第二电容C2,所述并联电路的第一端接地,所述并联电路的第二端耦接第七电阻R7的第一端,所述第七电阻R7的第二端耦接供电端VCC,所述反馈环路包括第三晶体管Q3、第一放大器AM1、第二放大器AM2和第九电阻R9,所述第三晶体管Q3的第一端耦接供电端VCC,所述第三晶体管Q3的第二端耦接第一高频线圈L1的第一端,所述第三晶体管Q3的控制端耦接第一放大器AM1的输出端,所述第一放大器AM1的第二输入端耦接并联电路的第二端,所述第一放大器AM1的第一输入端耦接第二放大器AM2的输出端,所述第二放大AM2器的输入端耦接第一高频线圈L1的第一端,所述第二放大器AM2的输出端耦接第九电阻R9后耦接地,所述第三晶体管Q3为场效应晶体管或者MOS晶体管或者三极管,其中MOS晶体管优选P沟道MOS晶体管。所述基准电压产生电路产生基准电压VREF,所述第三晶体管Q3的电流限制由基准电压VREF、第九电阻R9等所确定的电流值。所述第二放大器AM2为电流放大器,测量第三晶体管Q3的电流,放大倍数设置为A,第二放大器AM2的输出端连接第九电阻R9,则第九电阻R9一端的电压可以表示为Figure 4 shows a schematic structural diagram of a zero-voltage switch circuit 300 according to an embodiment of the present invention. Compared with the zero-voltage switch circuit 200 shown in Figure 3, the zero-voltage switch circuit 200 also includes a
VR9=A*IQ3*R9 (1)VR9=A*IQ3*R9 (1)
其中IQ3是第三晶体管Q3的电流,所述R9为第九电阻的阻值。在稳定状态下,第一放大器AM1的第二输入端的电压固定为基准电压VREF,第二放大器AM2的输入端的电压随第三晶体管Q3电流而变化并小于第一放大器AM1的第一端的基准电压VREF,第三晶体管Q3保持最小导通电阻。当电路出现故障等原因导致第三晶体管Q3的电流IQ3增大时候,根据公式(1),第一放大器AM1的第一输入端的电压也开始增大并逐渐接近基准电压VREF,第一放大器AM1的输出端电压亦随之增大第三晶体管Q3的导通电阻,进而将第三晶体管Q3的最大电流稳定在Wherein IQ3 is the current of the third transistor Q3, and the R9 is the resistance of the ninth resistor. In a steady state, the voltage at the second input terminal of the first amplifier AM1 is fixed at the reference voltage VREF, and the voltage at the input terminal of the second amplifier AM2 varies with the current of the third transistor Q3 and is smaller than the reference voltage at the first terminal of the first amplifier AM1 VREF, the third transistor Q3 maintains a minimum on-resistance. When the current IQ3 of the third transistor Q3 increases due to a circuit failure or other reasons, according to formula (1), the voltage at the first input terminal of the first amplifier AM1 also starts to increase and gradually approaches the reference voltage VREF, the voltage of the first amplifier AM1 The voltage at the output terminal also increases the on-resistance of the third transistor Q3 accordingly, thereby stabilizing the maximum current of the third transistor Q3 at
IQ3=VREF/(A*R9) (2)IQ3=VREF/(A*R9) (2)
在系统关闭过程中,第八电阻R8对第二电容C2放电,第二电容C2上的电压为0。系统上电后,供电端VCC通过第七电阻R7对第二电容C2充电,使得第二电容C2上的电压缓慢的由0逐渐升高到基准电压VREF。根据公式2,第三晶体管Q3的电流IQ3也由0逐渐增大到VREF/(A*R9)。即,图4所示的保护电路400不仅可以保护运行过程中的过电流,还可以在启动过程中对装置进行软启动。保护电路400具有软启动和过流保护功能,可以防止零电压开关电路300启动过程中或运行时电流过大导致设备烧坏。During the shutdown process of the system, the eighth resistor R8 discharges the second capacitor C2, and the voltage on the second capacitor C2 is zero. After the system is powered on, the power supply terminal VCC charges the second capacitor C2 through the seventh resistor R7, so that the voltage on the second capacitor C2 slowly increases from 0 to the reference voltage VREF. According to
所述保护电路400进一步还包括电阻网络、比较器和放电通路DS,记为保护电路500,所述电阻网络包括第十电阻R10、第十一电阻R11、第十二电阻R12和第十三电阻R13,所述第十电阻R10的第一端耦接供电端VCC,所述第十电阻R10的第二端耦接第十一电阻R11耦接地,所述第十二电阻R12的第一端耦接供电端VCC,所述第十二电阻R12的第二端耦接第十三电阻R13后耦接地,所述第十电阻R10的第二端耦接比较器CM1的第一输入端,所述第十二电阻R12的第二端耦接比较器CM1的第二输入端,所述放电通路DS包括串联的N-MOS晶体管和第十四电阻R14,所述比较器CM1的输出端连接N-MOS晶体管的控制端,所述N-MOS晶体管的第二端耦接地,所述N-MOS晶体管的第一端耦接地十四电阻R14的第一端,所述第十四电阻R14的第二端耦接第一放大器AM1的第二输入端。所述电阻网络降低了电源波动对保护电路500的影响,所述放电通路DS用以对第二电容C2放电。The
在一个实施例中,第十电阻R10和第十二电阻R12为阻值相等的匹配电阻(温度特性相同),第十一电阻R11的温度系数大于第十三电阻R13的温度系数,即温度升高时,第十一电阻R11阻值增大特性更加明显。常温下,第十一电阻R11的阻值略小于第十三电阻R13的阻值以保证比较器CM1输出低电平,放电通路DS保持关闭,即不对其它电路产生影响。当温度升高到设定温度时,由于第十一电阻R11阻值增大更多,比较器CM1的第一输入端的电压将超过其第二输入端的电压,比较器CM1将输出高电平,放电通路DS开始对第二电容C2放电,第一放大器AM1的第二输入端电压降低。In one embodiment, the tenth resistor R10 and the twelfth resistor R12 are matching resistors with equal resistance (same temperature characteristics), and the temperature coefficient of the eleventh resistor R11 is greater than that of the thirteenth resistor R13, that is, the temperature rise When the value is high, the resistance increase characteristic of the eleventh resistor R11 is more obvious. At room temperature, the resistance of the eleventh resistor R11 is slightly smaller than the resistance of the thirteenth resistor R13 to ensure that the output of the comparator CM1 is low, and the discharge path DS remains closed, that is, it does not affect other circuits. When the temperature rises to the set temperature, since the resistance value of the eleventh resistor R11 increases more, the voltage at the first input terminal of the comparator CM1 will exceed the voltage at the second input terminal of the comparator CM1, and the comparator CM1 will output a high level, The discharge path DS starts to discharge the second capacitor C2, and the voltage of the second input terminal of the first amplifier AM1 decreases.
根据公式(2),由于第一放大器AM1的第二输入端的电压降低,通过第三晶体管Q3的电流IQ3也逐渐降低,进而使得设备温度降低。随着温度降低,由于第十一电阻R11阻值降低,比较器CM1的第一输入端的电压也降低,当设备温度降低至足够低时,比较器CM1将重新翻转为低电平,放电通路DS关闭。而后,供电端VCC开始通过第七电阻R7对第二电容C2充电,第一放大器AM1的第二输入端的电压升高,通过第三晶体管Q3的电流IQ3也开始升高。其中一个实施例,比较器CM1可以选择迟滞比较器。According to formula (2), since the voltage of the second input terminal of the first amplifier AM1 decreases, the current IQ3 passing through the third transistor Q3 also decreases gradually, thereby reducing the temperature of the device. As the temperature decreases, due to the decrease in the resistance value of the eleventh resistor R11, the voltage at the first input terminal of the comparator CM1 also decreases. closure. Then, the power supply terminal VCC starts to charge the second capacitor C2 through the seventh resistor R7, the voltage of the second input terminal of the first amplifier AM1 increases, and the current IQ3 passing through the third transistor Q3 also starts to increase. In one embodiment, the comparator CM1 can be a hysteresis comparator.
图7示出根据本包括保护电路500的零电压开关电路实施例的温度调节曲线,其中横轴是时间(T),纵轴是电流(I)。图7中,FIG. 7 shows a temperature regulation curve according to the embodiment of the zero voltage switching circuit including the
IC2=VC2/(A*R9) (3)IC2=VC2/(A*R9) (3)
其中VC2为第二电容C2上电压。假定系统正常工作时,第三晶体管Q3的电流小于系统的最大电流(即系统电流未达到最大,VC2<VREF,IC2<VREF/(A*R9))。假定由于此时负载电流较大,设备温度持续升高,T1时刻,设备温度达到设定温度,放电通路DS开始对第二电容C2放电,第二电容C2上电压VC2开始降低。由于设备并非满载工作,即第三晶体管Q3的电流IQ3的最大值并未达到最大,T1至T2时刻,虽然第二电容C2上电压VC2逐渐降低,但第三晶体管Q3上电流IQ3并未减小。T2时刻开始,第二电容C2上电压降低至足够小,第三晶体管Q3上电流IQ3随着第二电容C2的电压VC2开始降低,系统温度开始降低。T3时刻,系统温度将至足够低的水平,比较器CM1翻转为低电平,放电通路DS停止对第二电容C2放电,供电端VCC开始通过第七电阻R7对第二电容C2充电,放大器AM1第一端电压升高,通过第三晶体管Q3的电流IQ3也开始升高。T4时刻,通过Q3的电流IQ3开始恢复至正常水平。T5时刻,第二电容C2的电压VC2恢复至最大电压VREF。需要注意的是,由于放电通路DS和第七电阻R7对第二电容C2充放电速率不一致,第三晶体Q3上电流IQ3下降和上升的速率也可能不一致。Where VC2 is the voltage on the second capacitor C2. Assume that when the system is working normally, the current of the third transistor Q3 is less than the maximum current of the system (that is, the system current does not reach the maximum, VC2<VREF, IC2<VREF/(A*R9)). Assuming that the temperature of the device continues to rise due to the large load current at this time, at time T1, the temperature of the device reaches the set temperature, the discharge path DS starts to discharge the second capacitor C2, and the voltage VC2 on the second capacitor C2 starts to decrease. Since the device is not working at full load, that is, the maximum value of the current IQ3 of the third transistor Q3 has not reached the maximum, from T1 to T2, although the voltage VC2 on the second capacitor C2 gradually decreases, the current IQ3 on the third transistor Q3 does not decrease. . From time T2, the voltage on the second capacitor C2 drops to a sufficiently small value, the current IQ3 on the third transistor Q3 starts to drop along with the voltage VC2 of the second capacitor C2, and the system temperature starts to drop. At time T3, the system temperature will reach a sufficiently low level, the comparator CM1 will switch to a low level, the discharge path DS will stop discharging the second capacitor C2, the power supply terminal VCC will start to charge the second capacitor C2 through the seventh resistor R7, and the amplifier AM1 will The voltage at the first terminal rises, and the current IQ3 passing through the third transistor Q3 also starts to rise. At time T4, the current IQ3 passing through Q3 starts to recover to the normal level. At time T5, the voltage VC2 of the second capacitor C2 recovers to the maximum voltage VREF. It should be noted that, because the discharge path DS and the seventh resistor R7 charge and discharge the second capacitor C2 at different rates, the falling and rising rates of the current IQ3 on the third crystal Q3 may also be inconsistent.
通过图7可以知道,图6所示的保护电路500可以使得温度在一定范围内平缓变化,而非频繁开关机或者忽冷忽热。因而,本技术领域的人可以通过合理设置第十电阻R10、第十一电阻R11、第十二电阻R12和第十三电阻R13的比例,对第二电容C2充放电的速率,进而将该装置的温度稳定在一定范围内,达到恒温目的。例如,稳定在280~300度之间。It can be seen from FIG. 7 that the
需要指出的是,本领域的技术人员可以根据本发明的教导,合理设置第十电阻R10、第十一电阻R11、第十二电阻R12和第十三电阻R13的阻值、比例和温度特性为以完成本发明的目的,例如将第十电阻R10的温度系数小于第十二电阻R12的温度系数,而非一定如实施例中所述将第十一电阻R11设置为温度系数高于第十三电阻R13。这些都是不脱离本发明的保护范围的。It should be pointed out that those skilled in the art can reasonably set the resistance value, ratio and temperature characteristics of the tenth resistor R10, the eleventh resistor R11, the twelfth resistor R12 and the thirteenth resistor R13 according to the teaching of the present invention. To accomplish the purpose of the present invention, for example, the temperature coefficient of the tenth resistor R10 is lower than the temperature coefficient of the twelfth resistor R12, instead of setting the eleventh resistor R11 to a temperature coefficient higher than that of the thirteenth resistor R11 as described in the embodiment. Resistor R13. These all do not depart from the protection scope of the present invention.
本发明并不局限于前述的具体实施方式。本发明扩展到任何在本说明书中披露的新特征或任何新的组合,以及披露的任一新的方法或过程的步骤或任何新的组合。如果本领域技术人员,在不脱离本发明的精神所做的非实质性改变或改进,都应该属于本发明权利要求保护的范围。The present invention is not limited to the foregoing specific embodiments. The present invention extends to any new feature or any new combination disclosed in this specification, and any new method or process step or any new combination disclosed. Any insubstantial changes or improvements made by those skilled in the art without departing from the spirit of the present invention shall all fall within the protection scope of the claims of the present invention.
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