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CN106887787B - A large channel semiconductor laser liquid cooling sheet and laser thereof - Google Patents

A large channel semiconductor laser liquid cooling sheet and laser thereof Download PDF

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Publication number
CN106887787B
CN106887787B CN201510934991.5A CN201510934991A CN106887787B CN 106887787 B CN106887787 B CN 106887787B CN 201510934991 A CN201510934991 A CN 201510934991A CN 106887787 B CN106887787 B CN 106887787B
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liquid
semiconductor laser
channel
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refrigerating sheet
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CN106887787A (en
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梁雪杰
于冬杉
刘兴胜
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Focuslight Technologies Inc
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Focuslight Technologies Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02407Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423Liquid cooling, e.g. a liquid cools a mount of the laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本发明提出了一种大通道半导体激光器液体制冷片及采用了该液体制冷片的半导体激光器叠阵,该大通道半导体激光器液体制冷片包括设有入液孔和出液孔的制冷片主体,制冷片主体内设有管状液体制冷通道,用于连通入液孔和出液孔。本发明的大通道半导体激光器液体制冷片中的液体制冷通道不易堵塞,提高了器件的可靠性和寿命,并且在同等流量的条件下散热效果与微通道制冷片相当;相比传统的宏通道液体制冷片,本发明的液体制冷片增加了制冷面积,缩短了热传导路径,提高了散热效率。

The present invention proposes a large-channel semiconductor laser liquid cooling plate and a semiconductor laser stack using the liquid cooling plate. The large-channel semiconductor laser liquid cooling plate includes a cooling plate body provided with a liquid inlet hole and a liquid outlet hole, and a tubular liquid cooling channel is provided in the cooling plate body for connecting the liquid inlet hole and the liquid outlet hole. The liquid cooling channel in the large-channel semiconductor laser liquid cooling plate of the present invention is not easy to be blocked, which improves the reliability and life of the device, and the heat dissipation effect is equivalent to that of the microchannel cooling plate under the condition of the same flow rate; compared with the traditional macro-channel liquid cooling plate, the liquid cooling plate of the present invention increases the cooling area, shortens the heat conduction path, and improves the heat dissipation efficiency.

Description

一种大通道半导体激光器液体制冷片及其激光器A large channel semiconductor laser liquid cooling sheet and laser thereof

技术领域Technical Field

本发明属于半导体激光器技术领域,具体涉及一种大通道半导体激光器液体制冷片及采用了该液体制冷片的半导体激光器叠阵。The invention belongs to the technical field of semiconductor lasers, and in particular relates to a large-channel semiconductor laser liquid cooling plate and a semiconductor laser stack using the liquid cooling plate.

背景技术Background technique

半导体激光器具有体积小、重量轻、可靠性高、使用寿命长、成本低的优点,目前已经广泛应用于国民经济的各个领域,比如激光泵浦,医疗以及工业加工领域。Semiconductor lasers have the advantages of small size, light weight, high reliability, long service life and low cost. They have been widely used in various fields of the national economy, such as laser pumping, medical treatment and industrial processing.

现有技术中,功率类电子器件的封装形式有传导冷却型、微通道液体制冷型及宏通道液体制冷型(200910023753.3)。对于高功率半导体激光器而言,采用传导冷却的方式,散热效率较低,会导致器件寿命和可靠性下降,一般只能达到几十瓦的输出功率;若采用微通道液体制冷的方式,制冷液体需采用高质量的去离子水,成本较高,并且长时间使用会导致微通道管壁腐蚀或者堵塞,严重影响了半导体激光器的可靠性。In the prior art, the packaging forms of power electronic devices include conduction cooling, microchannel liquid cooling and macrochannel liquid cooling (200910023753.3). For high-power semiconductor lasers, the conduction cooling method has low heat dissipation efficiency, which will lead to a decrease in device life and reliability, and generally only achieve an output power of tens of watts; if the microchannel liquid cooling method is used, the cooling liquid needs to be high-quality deionized water, which is expensive, and long-term use will cause corrosion or blockage of the microchannel tube wall, seriously affecting the reliability of the semiconductor laser.

中国专利200910023753.3提出了一种液体制冷片结构,虽然解决了微通道液体制冷的管壁堵塞问题,但是散热效果有待提高,制约了半导体激光器的功率的进一步提高和应用领域。Chinese patent 200910023753.3 proposes a liquid cooling sheet structure, which solves the tube wall blockage problem of microchannel liquid cooling, but the heat dissipation effect needs to be improved, which restricts the further improvement of the power and application field of semiconductor lasers.

发明内容Summary of the invention

为了克服现有技术的不足,本发明提出了一种大通道半导体激光器液体制冷片及采用了该液体制冷片的半导体激光器叠阵,避免了微通道堵塞的问题,并且相比宏通道液体制冷片提高了散热效果,具体的技术方案为:In order to overcome the shortcomings of the prior art, the present invention proposes a large-channel semiconductor laser liquid cooling sheet and a semiconductor laser stack using the liquid cooling sheet, which avoids the problem of microchannel blockage and improves the heat dissipation effect compared with the macro-channel liquid cooling sheet. The specific technical solution is as follows:

一种大通道半导体激光器液体制冷片,包括片状制冷片主体。所述的制冷片主体上设置入液孔和出液孔,所述的入液孔和出液孔均贯通制冷片主体的上表面和下表面;制冷片主体上靠近入液孔的一端设置芯片安装区,用于安装激光芯片;所述的入液孔的内壁上设有入水口,出液孔的内壁上设有出水口,所述的制冷片主体内设有管状液体制冷通道,用于将入水口和出水口连通,且液体制冷通道以入水口为起点,路径经芯片安装区与入液孔之间的区域,以出水口为终点。A large-channel semiconductor laser liquid cooling plate comprises a sheet-shaped cooling plate body. A liquid inlet and a liquid outlet are arranged on the cooling plate body, and the liquid inlet and the liquid outlet both penetrate the upper surface and the lower surface of the cooling plate body; a chip mounting area is arranged at one end of the cooling plate body close to the liquid inlet, for mounting a laser chip; a water inlet is arranged on the inner wall of the liquid inlet, and a water outlet is arranged on the inner wall of the liquid outlet; a tubular liquid cooling channel is arranged in the cooling plate body, for connecting the water inlet and the water outlet, and the liquid cooling channel starts from the water inlet, passes through the area between the chip mounting area and the liquid inlet, and ends at the water outlet.

本发明的大通道半导体激光器液体制冷片还有这样的结构:包括片状制冷片主体,制冷片主体上设置通液孔,通液孔贯通制冷片主体的上表面和下表面,在制冷片主体的一端设置芯片安装区,所述的制冷片主体的侧面设置入水口,所述通液孔的内壁上设置出水口,制冷片主体内设有管状液体制冷通道,用于将入水口和出水口连通,管状液体制冷通道水流路径经芯片安装区与通液孔之间的区域,以达到最优的散热效果。这种结构也可以将入水口设置于通液孔的内壁,出水口设置于制冷片主体的侧壁上。The large channel semiconductor laser liquid cooling plate of the present invention also has such a structure: it includes a sheet cooling plate body, a liquid through hole is arranged on the cooling plate body, the liquid through hole passes through the upper surface and the lower surface of the cooling plate body, a chip mounting area is arranged at one end of the cooling plate body, a water inlet is arranged on the side of the cooling plate body, a water outlet is arranged on the inner wall of the liquid through hole, a tubular liquid cooling channel is arranged in the cooling plate body, which is used to connect the water inlet and the water outlet, and the water flow path of the tubular liquid cooling channel passes through the area between the chip mounting area and the liquid through hole to achieve the best heat dissipation effect. This structure can also set the water inlet on the inner wall of the liquid through hole, and the water outlet on the side wall of the cooling plate body.

所述制冷片主体内的液体制冷通道的直径为0.5mm-3mm。The diameter of the liquid refrigeration channel in the refrigeration plate body is 0.5mm-3mm.

所述的制冷片主体为金属,比如铜或者铜-金刚石的混合材料。The cooling plate body is made of metal, such as copper or a copper-diamond mixed material.

采用了上述大通道的半导体激光器液体制冷片的半导体激光器叠阵,自下而上依次为通水块,正电极片,至少一个半导体激光器单元,负电极片。所述的半导体激光器单元包括本发明的大通道半导体激光器液体制冷片,激光芯片,负极连接片;所述的激光芯片正极键合于液体制冷片的芯片安装区,激光芯片的负极与负极连接片直接连接,或者激光芯片的负极通过金线与负极连接片连接,负极连接片与液体制冷片之间设有绝缘层,用于使液体制冷片和负极连接片之间绝缘。所述的通水块设有进水管和出水管,与上述液体制冷片内的液体制冷通道连通,构成制冷水路。The semiconductor laser stack array using the above-mentioned large-channel semiconductor laser liquid cooling plate includes, from bottom to top, a water block, a positive electrode plate, at least one semiconductor laser unit, and a negative electrode plate. The semiconductor laser unit includes the large-channel semiconductor laser liquid cooling plate of the present invention, a laser chip, and a negative electrode connecting plate; the positive electrode of the laser chip is bonded to the chip mounting area of the liquid cooling plate, the negative electrode of the laser chip is directly connected to the negative electrode connecting plate, or the negative electrode of the laser chip is connected to the negative electrode connecting plate through a gold wire, and an insulating layer is provided between the negative electrode connecting plate and the liquid cooling plate to insulate the liquid cooling plate from the negative electrode connecting plate. The water block is provided with a water inlet pipe and a water outlet pipe, which are connected to the liquid cooling channel in the above-mentioned liquid cooling plate to form a cooling water circuit.

所述的半导体激光器叠阵的两侧分别各设有一块侧板,半导体激光器叠阵的负电极片上设置固定块,两块侧板和固定块用于固定半导体激光器叠阵;所述的半导体激光器叠阵的背部安装有绝缘块,绝缘块上覆有正电极片的引出电极和负电极片的引出电极。A side plate is provided on each side of the semiconductor laser stack, and a fixing block is provided on the negative electrode sheet of the semiconductor laser stack. The two side plates and the fixing block are used to fix the semiconductor laser stack; an insulating block is installed on the back of the semiconductor laser stack, and the insulating block is covered with the lead-out electrode of the positive electrode sheet and the lead-out electrode of the negative electrode sheet.

所述的半导体激光器单元的激光芯片和芯片安装区之间设有应力缓释层,激光芯片的正极焊接或者金属键合在应力缓释层上,应力缓释层焊接或者金属键合在芯片安装区上;所述的应力缓释层材料为铜钨。A stress relief layer is provided between the laser chip and the chip mounting area of the semiconductor laser unit, the positive electrode of the laser chip is welded or metal-bonded to the stress relief layer, and the stress relief layer is welded or metal-bonded to the chip mounting area; the material of the stress relief layer is copper tungsten.

本发明具有以下优点:The present invention has the following advantages:

本发明的大通道半导体激光器液体制冷片中的液体制冷通道不易堵塞,提高了器件的可靠性和寿命,并且在同等流量的条件下散热效果与微通道制冷片相当。相比传统的宏通道液体制冷片,本发明的大通道半导体激光器液体制冷片增加了制冷面积,缩短了热传导路径,提高了散热效率。The liquid cooling channel in the large-channel semiconductor laser liquid cooling sheet of the present invention is not easy to be blocked, which improves the reliability and life of the device, and the heat dissipation effect is equivalent to that of the microchannel cooling sheet under the condition of the same flow rate. Compared with the traditional macro-channel liquid cooling sheet, the large-channel semiconductor laser liquid cooling sheet of the present invention increases the cooling area, shortens the heat conduction path, and improves the heat dissipation efficiency.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1为本发明的大通道半导体激光器的液体制冷片。FIG. 1 is a liquid cooling plate of a large channel semiconductor laser of the present invention.

图2为本发明的大通道半导体激光器的液体制冷片的内部结构透视图。FIG. 2 is a perspective view of the internal structure of the liquid cooling plate of the large channel semiconductor laser of the present invention.

图3为本发明的大通道半导体激光器的液体制冷片的实施例二。FIG. 3 is a second embodiment of the liquid cooling plate of the large channel semiconductor laser of the present invention.

图4为采用了本发明的大通道的液体制冷片的半导体激光器叠阵。FIG. 4 is a semiconductor laser stack using the large-channel liquid cooling plate of the present invention.

图5为半导体激光器叠阵中的半导体激光器单元。FIG. 5 shows a semiconductor laser unit in a semiconductor laser stack.

图6为半导体激光器叠阵的制冷水路示意图。FIG. 6 is a schematic diagram of the cooling water circuit of the semiconductor laser stack.

附图标号说明:1 为入液孔,2为出液孔,3为入水口,4为出水口,5为芯片安装区,6为管状液体制冷通道,7为通液孔,8为固定块,9为通水块,10为半导体激光器单元,11为制冷片主体,12为激光芯片,13为半导体激光器单元的负极连接片,14为应力缓释层,15为进水管,16为出水管。Explanation of the accompanying numbers: 1 is the liquid inlet, 2 is the liquid outlet, 3 is the water inlet, 4 is the water outlet, 5 is the chip mounting area, 6 is the tubular liquid cooling channel, 7 is the liquid through hole, 8 is the fixing block, 9 is the water through block, 10 is the semiconductor laser unit, 11 is the cooling plate body, 12 is the laser chip, 13 is the negative electrode connecting plate of the semiconductor laser unit, 14 is the stress relief layer, 15 is the water inlet pipe, and 16 is the water outlet pipe.

具体实施方式Detailed ways

如图1为本发明的大通道半导体激光器的液体制冷片,包括片状制冷片主体11;所述的制冷片主体11上设置入液孔1和出液孔2,所述的入液孔1和出液孔2均贯通制冷片主体11的上表面和下表面;制冷片主体11上靠近入液孔1的一端设置芯片安装区5,用于安装激光芯片;所述的入液孔1的内壁上设有入水口3,出液孔2的内壁上设有出水口4,所述的制冷片主体11内设有管状液体制冷通道6,用于将入水口3和出水口4连通,且液体制冷通道6以入水口3为起点,路径经过芯片安装区5与入液孔之间的区域,以出水口4为终点,具体结构可参考图2的内部结构透视图。As shown in Figure 1, the liquid cooling plate of the large channel semiconductor laser of the present invention includes a sheet-like cooling plate body 11; a liquid inlet hole 1 and a liquid outlet hole 2 are arranged on the cooling plate body 11, and the liquid inlet hole 1 and the liquid outlet hole 2 both pass through the upper surface and the lower surface of the cooling plate body 11; a chip mounting area 5 is arranged at one end of the cooling plate body 11 close to the liquid inlet hole 1, for mounting a laser chip; a water inlet 3 is arranged on the inner wall of the liquid inlet hole 1, and a water outlet 4 is arranged on the inner wall of the liquid outlet hole 2; a tubular liquid cooling channel 6 is arranged in the cooling plate body 11, for connecting the water inlet 3 and the water outlet 4, and the liquid cooling channel 6 takes the water inlet 3 as the starting point, passes through the area between the chip mounting area 5 and the liquid inlet, and ends at the water outlet 4. For the specific structure, please refer to the internal structure perspective view of Figure 2.

图3为本发明的大通道半导体激光器的液体制冷片的实施例二:制冷片主体11上设置通液孔7,通液孔7贯通制冷片主体11的上表面和下表面,在制冷片主体11的一端设置芯片安装区5,所述的制冷片主体11的侧面设置入水口3,所述通液孔7的内壁上设置出水口4,制冷片主体内设有管状液体制冷通道6,用于将入水口3和出水口4连通,管状液体制冷通道6水流路径经过芯片安装区5与通液孔之间的区域,以达到最优的散热效果。FIG3 is a second embodiment of the liquid cooling plate of the large-channel semiconductor laser of the present invention: a liquid through hole 7 is arranged on the cooling plate body 11, and the liquid through hole 7 passes through the upper surface and the lower surface of the cooling plate body 11; a chip mounting area 5 is arranged at one end of the cooling plate body 11; a water inlet 3 is arranged on the side of the cooling plate body 11; a water outlet 4 is arranged on the inner wall of the liquid through hole 7; a tubular liquid cooling channel 6 is arranged in the cooling plate body for connecting the water inlet 3 and the water outlet 4; the water flow path of the tubular liquid cooling channel 6 passes through the area between the chip mounting area 5 and the liquid through hole to achieve the best heat dissipation effect.

所述制冷片主体11内的液体制冷通道6的直径为0.5mm-3mm。The diameter of the liquid cooling channel 6 in the cooling fin body 11 is 0.5 mm to 3 mm.

所述的制冷片主体11为金属,或者铜-金刚石的混合材料。The cooling plate body 11 is made of metal or a mixed material of copper and diamond.

图4为采用了本发明的大通道的液体制冷片的半导体激光器叠阵,自下而上依次为通水块9,正电极片,至少一个半导体激光器单元10,负电极片。图5为半导体激光器叠阵中的半导体激光器单元的结构,半导体激光器单元10包括本发明的大通道半导体激光器液体制冷片,激光芯片12,负极连接片13;所述的激光芯片12正极键合于液体制冷片的芯片安装区5,激光芯片12的负极与负极连接片13直接连接,或者激光芯片的负极通过金线与负极连接片连接,负极连接片与液体制冷片之间设有绝缘层,用于使液体制冷片和负极连接片之间绝缘。FIG4 is a semiconductor laser stack using the large-channel liquid cooling sheet of the present invention, which includes, from bottom to top, a water block 9, a positive electrode sheet, at least one semiconductor laser unit 10, and a negative electrode sheet. FIG5 is a structure of a semiconductor laser unit in the semiconductor laser stack, wherein the semiconductor laser unit 10 includes the large-channel semiconductor laser liquid cooling sheet of the present invention, a laser chip 12, and a negative electrode connecting sheet 13; the positive electrode of the laser chip 12 is bonded to the chip mounting area 5 of the liquid cooling sheet, the negative electrode of the laser chip 12 is directly connected to the negative electrode connecting sheet 13, or the negative electrode of the laser chip is connected to the negative electrode connecting sheet through a gold wire, and an insulating layer is provided between the negative electrode connecting sheet and the liquid cooling sheet to insulate the liquid cooling sheet and the negative electrode connecting sheet.

所述的半导体激光器叠阵的两侧分别各设有一块侧板,半导体激光器叠阵的负电极片上设置固定块8,两块侧板和固定块8用于固定半导体激光器叠阵;所述的半导体激光器叠阵的背部安装有绝缘块,绝缘块上覆有正电极片的引出电极和负电极片的引出电极。A side plate is provided on each side of the semiconductor laser stack, and a fixing block 8 is provided on the negative electrode sheet of the semiconductor laser stack. The two side plates and the fixing block 8 are used to fix the semiconductor laser stack; an insulating block is installed on the back of the semiconductor laser stack, and the insulating block is covered with the lead-out electrode of the positive electrode sheet and the lead-out electrode of the negative electrode sheet.

所述的半导体激光器单元的激光芯片12和芯片安装区5之间设有应力缓释层14,激光芯片12的正极焊接或者金属键合在应力缓释层14上,应力缓释层14焊接或者金属键合在芯片安装区5上;所述的应力缓释层材料为铜钨。A stress relief layer 14 is provided between the laser chip 12 of the semiconductor laser unit and the chip mounting area 5, the positive electrode of the laser chip 12 is welded or metal-bonded to the stress relief layer 14, and the stress relief layer 14 is welded or metal-bonded to the chip mounting area 5; the material of the stress relief layer is copper tungsten.

所述的通水块设有进水管15和出水管16,与上述液体制冷片内的液体制冷通道6连通,构成制冷水路。图6为半导体激光器叠阵的制冷水路示意图,图中箭头方向为制冷液的流向。The water block is provided with a water inlet pipe 15 and a water outlet pipe 16, which are connected to the liquid cooling channel 6 in the liquid cooling plate to form a cooling water circuit. Figure 6 is a schematic diagram of the cooling water circuit of the semiconductor laser stack, and the arrow direction in the figure is the flow direction of the cooling liquid.

Claims (9)

1. A large-channel semiconductor laser liquid refrigerating sheet is characterized in that: comprises a flaky refrigeration piece main body;
The refrigerating sheet main body is provided with a liquid inlet hole and a liquid outlet hole, and the liquid inlet hole and the liquid outlet hole are communicated with the upper surface and the lower surface of the refrigerating sheet main body; a chip mounting area is arranged at one end of the refrigerating sheet main body, which is close to the liquid inlet hole, and is used for mounting a laser chip; the inner wall of the liquid inlet hole is provided with a water inlet, the inner wall of the liquid outlet hole is provided with a water outlet, and the refrigerating sheet main body is internally provided with a tubular liquid refrigerating channel which is communicated with the water inlet and the water outlet.
2. The large channel semiconductor laser liquid chilling plate as defined in claim 1, wherein: the liquid refrigerating channel takes a water inlet as a starting point, and a path passes through the area between the chip mounting area and the liquid inlet and takes a water outlet as an ending point.
3. A large-channel semiconductor laser liquid refrigerating sheet is characterized in that: comprises a flaky refrigeration piece main body;
The refrigerating sheet main body is provided with a liquid through hole, the liquid through hole penetrates through the upper surface and the lower surface of the refrigerating sheet main body, and one end of the refrigerating sheet main body is provided with a chip mounting area; the side of the refrigerating sheet main body is provided with a water inlet, the inner wall of the liquid through hole is provided with a water outlet, and a tubular liquid refrigerating channel is arranged in the refrigerating sheet main body and used for communicating the water inlet with the water outlet.
4. A large channel semiconductor laser liquid chiller as set forth in claim 3 wherein: the tubular liquid refrigeration passage water flow path passes through the area between the chip mounting area and the liquid through hole.
5. A large channel semiconductor laser liquid chiller as claimed in claim 1 or 3 wherein: the diameter of the liquid refrigerating channel in the refrigerating sheet main body is 0.5mm-3mm.
6. A large channel semiconductor laser liquid chiller as claimed in claim 1 or 3 wherein: the main body of the refrigerating sheet is copper-diamond or copper.
7. A semiconductor laser stack employing a large channel semiconductor laser liquid chiller as set forth in claim 1 or 3 wherein: the device comprises a lower water block, a positive electrode plate, at least one semiconductor laser unit and a negative electrode plate from bottom to top in sequence; the semiconductor laser unit comprises the large-channel semiconductor laser liquid refrigerating sheet, a laser chip and a negative electrode connecting sheet; the laser chip positive electrode bond in the chip mounting area of liquid refrigeration piece, the negative pole of laser chip is connected with negative pole connection piece lug connection, perhaps the negative pole of laser chip passes through gold thread and is connected with the negative pole connection piece, is equipped with the insulating layer between negative pole connection piece and the liquid refrigeration piece for make insulating between liquid refrigeration piece and the negative pole connection piece.
8. The semiconductor laser stack of claim 7, wherein: two sides of the semiconductor laser stacked array are respectively provided with a side plate, a fixed block is arranged on a negative electrode plate of the semiconductor laser stacked array, and the two side plates and the fixed block are used for fixing the semiconductor laser stacked array; the back of the semiconductor laser stacked array is provided with an insulating block, and the insulating block is covered with an extraction electrode of the positive electrode plate and an extraction electrode of the negative electrode plate.
9. The semiconductor laser stack of claim 7, wherein: a stress slow-release layer is arranged between the laser chip and the chip mounting area of the semiconductor laser unit, the positive electrode of the laser chip is welded or bonded on the stress slow-release layer, and the stress slow-release layer is welded or bonded on the chip mounting area; the stress slow-release layer is made of copper tungsten.
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CN110501365A (en) * 2019-03-12 2019-11-26 厦门超新芯科技有限公司 A kind of In Situ Heating chip and preparation method thereof
CN110783811B (en) * 2019-10-29 2025-02-18 深圳市柠檬光子科技有限公司 A high-power module for surface-emitting laser chips
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