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CN106876330A - A kind of array base palte and preparation method thereof, display panel and display device - Google Patents

A kind of array base palte and preparation method thereof, display panel and display device Download PDF

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Publication number
CN106876330A
CN106876330A CN201710111183.8A CN201710111183A CN106876330A CN 106876330 A CN106876330 A CN 106876330A CN 201710111183 A CN201710111183 A CN 201710111183A CN 106876330 A CN106876330 A CN 106876330A
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layer
metal layer
touch
electrode
array base
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金慧俊
张敏
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Shanghai AVIC Optoelectronics Co Ltd
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Shanghai AVIC Optoelectronics Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

本发明实施例提供了一种阵列基板及其制备方法、显示面板及显示装置,通过将漏极、源极、数据线和触控走线同层设置,从而避免单独设置触控走线所在膜层,从而无需使用单独的掩膜版通过相应的构图工艺来制作触控走线层;以及,还通过将像素电极与漏极在不通过过孔的情况下直接电性连接,从而无需通过掩膜版的构图工艺来进行孔刻;进而省去了两次掩膜版构图工艺。因此,本发明实施例提供的技术方案能够简化阵列基板的制作过程,降低工艺流程复杂程度,减少掩膜版使用数量,生产成本低。

Embodiments of the present invention provide an array substrate and its preparation method, a display panel, and a display device. By arranging the drain, the source, the data line, and the touch wiring on the same layer, it is avoided to separately arrange the film where the touch wiring is located. layer, so that there is no need to use a separate mask to make the touch wiring layer through the corresponding patterning process; and, by directly electrically connecting the pixel electrode and the drain without passing through the via The patterning process of the stencil is used to carry out hole engraving; thus eliminating the need for two mask patterning processes. Therefore, the technical solution provided by the embodiments of the present invention can simplify the manufacturing process of the array substrate, reduce the complexity of the process flow, reduce the number of masks used, and reduce the production cost.

Description

一种阵列基板及其制备方法、显示面板及显示装置A kind of array substrate and its preparation method, display panel and display device

【技术领域】【Technical field】

本发明涉及触控技术领域,尤其涉及一种阵列基板及其制备方法、显示面板及显示装置。The present invention relates to the field of touch technology, in particular to an array substrate and a preparation method thereof, a display panel and a display device.

【背景技术】【Background technique】

随着触控技术领域的发展,具有触控功能的显示面板已经越来越成为主流显示产品。现有的显示面板和触控面板的集成方式一般分为in-cell(内嵌式)和on-cell(盒外式)两种方式,in-cell触摸屏相较于on-cell触摸屏来说更为轻薄。目前,现有技术的in-cell触摸屏的阵列基板至少包括栅极金属层、半导体层、源漏极金属层、第一氮化硅层、像素电极、触控金属层、第二氮化硅层和公共电极。With the development of the field of touch technology, display panels with touch functions have increasingly become mainstream display products. The existing integration methods of display panels and touch panels are generally divided into two methods: in-cell (embedded) and on-cell (outside the box). Compared with on-cell touch screens, in-cell touch screens are more For thin and light. At present, the array substrate of the in-cell touch screen in the prior art at least includes a gate metal layer, a semiconductor layer, a source-drain metal layer, a first silicon nitride layer, a pixel electrode, a touch metal layer, and a second silicon nitride layer. and common electrodes.

发明人发现现有技术中至少存在如下问题:The inventor finds that there are at least the following problems in the prior art:

现有技术中阵列基板的制备过程中,在形成上述栅极金属层、半导体层、源漏极金属层、第一绝缘层、像素电极、触控金属层、第二绝缘层和公共电极时,每层均需要使用单独的掩膜版通过相应的构图工艺来制作,工艺流程较为复杂,需要使用数量较多的掩膜版,生产成本高。In the preparation process of the array substrate in the prior art, when forming the above-mentioned gate metal layer, semiconductor layer, source-drain metal layer, first insulating layer, pixel electrode, touch metal layer, second insulating layer and common electrode, Each layer needs to be produced by using a separate mask plate through a corresponding patterning process, the process flow is relatively complicated, a large number of mask plates are required, and the production cost is high.

【发明内容】【Content of invention】

有鉴于此,本发明实施例提供了一种阵列基板及其制备方法、显示面板及显示装置,能够减少掩膜版的使用数量,简化阵列基板的制作过程。In view of this, embodiments of the present invention provide an array substrate and a manufacturing method thereof, a display panel and a display device, which can reduce the number of masks used and simplify the manufacturing process of the array substrate.

一方面,本发明实施例提供了一种阵列基板,包括:In one aspect, an embodiment of the present invention provides an array substrate, including:

衬底基板;Substrate substrate;

位于所述衬底基板上的第一金属层,所述第一金属层包括栅极和栅线;a first metal layer on the base substrate, the first metal layer includes a gate and a gate line;

位于所述第一金属层上的有源层;an active layer on the first metal layer;

位于所述栅极和栅线所在膜层上的像素电极;a pixel electrode located on the film layer where the gate and gate line are located;

位于所述有源层和所述像素电极上的第二金属层,所述第二金属层包括漏极、源极和数据线,其中,所述漏极与所述像素电极电性连接;a second metal layer located on the active layer and the pixel electrode, the second metal layer includes a drain electrode, a source electrode and a data line, wherein the drain electrode is electrically connected to the pixel electrode;

位于所述第二金属层上的公共电极层,所述公共电极层包括多个以阵列方式设置的公共电极块,所述公共电极块复用为触控电极;所述阵列基板还包括:A common electrode layer located on the second metal layer, the common electrode layer includes a plurality of common electrode blocks arranged in an array, and the common electrode blocks are multiplexed as touch electrodes; the array substrate further includes:

触控走线,位于所述第二金属层;所述触控走线与所述漏极、源极、数据线和像素电极电性绝缘,且通过过孔与所述公共电极层的公共电极块电性连接。The touch wiring is located on the second metal layer; the touch wiring is electrically insulated from the drain, source, data line and pixel electrode, and is connected to the common electrode of the common electrode layer through a via hole block electrical connections.

具体地,所述阵列基板还包括:Specifically, the array substrate also includes:

第一绝缘层,位于所述第一金属层和所述有源层之间。The first insulating layer is located between the first metal layer and the active layer.

具体地,所述阵列基板还包括:Specifically, the array substrate also includes:

第二绝缘层,位于所述公共电极层和所述第二金属层之间;所述第二绝缘层上设有过孔。The second insulating layer is located between the common electrode layer and the second metal layer; the second insulating layer is provided with via holes.

具体地,所述漏极与所述像素电极直接电性连接。Specifically, the drain is directly electrically connected to the pixel electrode.

具体地,所述触控走线与所述数据线相邻设置,且所述触控走线与所述数据线平行。Specifically, the touch wiring is arranged adjacent to the data line, and the touch wiring is parallel to the data line.

另一方面,本发明实施例提供了一种显示面板,包括:上述的阵列基板。On the other hand, an embodiment of the present invention provides a display panel, including: the above-mentioned array substrate.

另一方面,本发明实施例提供了一种显示装置,包括:上述的显示面板。On the other hand, an embodiment of the present invention provides a display device, including: the above-mentioned display panel.

另一方面,本发明实施例提供了一种阵列基板的制作方法,包括:On the other hand, an embodiment of the present invention provides a method for manufacturing an array substrate, including:

在衬底基板形成第一金属层,所述第一金属层包括栅极和栅线;forming a first metal layer on the base substrate, the first metal layer including a gate and a gate line;

在所述第一金属层上形成有源层;forming an active layer on the first metal layer;

在所述栅极和栅线所在膜层上形成像素电极;,forming a pixel electrode on the film layer where the gate and the gate line are located;

在所述有源层和所述像素电极上形成第二金属层和触控走线,其中,所述第二金属层以及包括所述漏极、源极和数据线所在的第二金属层,其中,所述漏极与所述像素电极电性连接;Forming a second metal layer and a touch control line on the active layer and the pixel electrode, wherein the second metal layer and the second metal layer including the drain electrode, the source electrode and the data line are located, Wherein, the drain is electrically connected to the pixel electrode;

形成覆盖第二金属层的第二绝缘层,在所述第二绝缘层上形成过孔;在所述第二金属层上形成公共电极层,其中,所述公共电极层包括多个以阵列方式设置的公共电极块,所述公共电极块复用为触控电极,所述公共电极块通过所述过孔与所述触控走线电性连接。forming a second insulating layer covering the second metal layer, forming via holes on the second insulating layer; forming a common electrode layer on the second metal layer, wherein the common electrode layer includes a plurality of The provided common electrode block is multiplexed as a touch electrode, and the common electrode block is electrically connected to the touch trace through the via hole.

具体地,所述方法还包括:Specifically, the method also includes:

在所述第一金属层和所述有源层之间形成第一绝缘层。A first insulating layer is formed between the first metal layer and the active layer.

具体地,所述方法还包括:Specifically, the method also includes:

在所述公共电极层和所述第二金属层之间形成第二绝缘层,并在所述第二绝缘层上形成过孔。A second insulating layer is formed between the common electrode layer and the second metal layer, and a via hole is formed on the second insulating layer.

具体地,所述漏极与所述像素电极直接电性连接。Specifically, the drain is directly electrically connected to the pixel electrode.

具体地,所述触控走线与所述数据线相邻设置,且所述触控走线与所述数据线平行。Specifically, the touch wiring is arranged adjacent to the data line, and the touch wiring is parallel to the data line.

上述技术方案中的一个技术方案具有如下有益效果:One of the above technical solutions has the following beneficial effects:

本发明实施例提供了一种阵列基板及其制备方法、显示面板及显示装置,通过将漏极、源极、数据线和触控走线同层设置,避免单独设置触控走线所在膜层,故无需使用单独的掩膜版并通过相应的构图工艺来制作触控走线层,能够简化阵列基板的制作过程,降低工艺流程复杂程度,减少掩膜版使用数量,生产成本低。Embodiments of the present invention provide an array substrate and its preparation method, a display panel, and a display device. By arranging drains, sources, data lines, and touch lines on the same layer, it is avoided to separately set the film layer where the touch lines are located. , so there is no need to use a separate mask and use a corresponding patterning process to manufacture the touch wiring layer, which can simplify the manufacturing process of the array substrate, reduce the complexity of the process flow, reduce the number of masks used, and reduce the production cost.

【附图说明】【Description of drawings】

为了更清楚地说明本发明实施例的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其它的附图。In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. Those of ordinary skill in the art can also obtain other drawings based on these drawings without paying creative labor.

图1是本发明实施例所提供的一种阵列基板上一种像素单元的结构示意图;FIG. 1 is a schematic structural diagram of a pixel unit on an array substrate provided by an embodiment of the present invention;

图2是图1中AA’向的剖面结构示意图;Fig. 2 is the schematic diagram of the sectional structure of AA' direction in Fig. 1;

图3是本发明实施例所提供的一种阵列基板上另一种像素单元的结构示意图;3 is a schematic structural diagram of another pixel unit on an array substrate provided by an embodiment of the present invention;

图4为本发明实施例所提供的一种阵列基板的制备方法的步骤示意图;4 is a schematic diagram of the steps of a method for preparing an array substrate provided by an embodiment of the present invention;

图5为本发明实施例所提供的一种阵列基板的制备方法的步骤示意图;5 is a schematic diagram of the steps of a method for preparing an array substrate provided by an embodiment of the present invention;

图6为本发明实施例所提供的一种显示面板的结构示意图;FIG. 6 is a schematic structural diagram of a display panel provided by an embodiment of the present invention;

图7为本发明实施例所提供的一种显示装置的结构示意图。FIG. 7 is a schematic structural diagram of a display device provided by an embodiment of the present invention.

【具体实施方式】【detailed description】

为了更好的理解本发明的技术方案,下面结合附图对本发明实施例进行详细描述。In order to better understand the technical solutions of the present invention, the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

应当明确,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。It should be clear that the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

在本发明实施例中使用的术语是仅仅出于描述特定实施例的目的,而非旨在限制本发明。在本发明实施例和所附权利要求书中所使用的单数形式的“一种”、“所述”和“该”也旨在包括多数形式,除非上下文清楚地表示其他含义。Terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. As used in the embodiments of the present invention and the appended claims, the singular forms "a", "said" and "the" are also intended to include the plural forms unless the context clearly indicates otherwise.

应当理解,尽管在本发明实施例中可能采用术语第一、第二、第三等来描述绝缘层,但这些绝缘层不应限于这些术语。这些术语仅用来将绝缘层彼此区分开。例如,在不脱离本发明实施例范围的情况下,第一绝缘层也可以被称为第二绝缘层,类似地,第二绝缘层也可以被称为第一绝缘层。It should be understood that although the terms first, second, third, etc. may be used to describe insulating layers in the embodiments of the present invention, these insulating layers should not be limited to these terms. These terms are only used to distinguish insulating layers from one another. For example, without departing from the scope of the embodiments of the present invention, a first insulating layer may also be called a second insulating layer, and similarly, a second insulating layer may also be called a first insulating layer.

如图1和图2所示,图1为本发明实施例所提供的一种阵列基板上一种像素单元的结构示意图、图2为图1中AA’向的剖面结构示意图、图3为发明实施例所提供的一种阵列基板上另一种像素单元的结构示意图,本发明提供一种阵列基板,包括:衬底基板1;位于衬底基板1上的第一金属层2,第一金属层包括栅极21和栅线22;位于第一金属层2上的有源层3;位于栅极21和栅线22所在膜层上的像素电极4;位于有源层3和像素电极4上的第二金属层5,第二金属层5包括漏极51、源极52和数据线53,其中,漏极51与像素电极4电性连接;位于第二金属层5上的公共电极层6,公共电极层6包括多个以阵列方式设置的公共电极块,公共电极块复用为触控电极;触控走线7,位于第二金属层5;触控走线7与漏极51、源极52、数据线53和像素电极4电性绝缘,且通过过孔91与公共电极层6的公共电极块电性连接。其中,阵列基板包括由多行栅线和多列数据线交叉限定的多个子像素单元,在每个子像素单元中,源极和漏极分别位于有源层的两侧,栅极与有源层的沟道区域相对设置,源极、漏极、有源层和栅极形成阵列基板中的薄膜晶体管(Thin Film Transistor,TFT)。As shown in Figures 1 and 2, Figure 1 is a schematic structural view of a pixel unit on an array substrate provided by an embodiment of the present invention; The embodiment provides a schematic structural diagram of another pixel unit on an array substrate. The present invention provides an array substrate, including: a base substrate 1; a first metal layer 2 located on the base substrate 1, the first metal Layers include gate 21 and gate line 22; active layer 3 on the first metal layer 2; pixel electrode 4 on the film layer where gate 21 and gate line 22 are located; active layer 3 and pixel electrode 4 The second metal layer 5, the second metal layer 5 includes a drain 51, a source 52 and a data line 53, wherein the drain 51 is electrically connected to the pixel electrode 4; the common electrode layer 6 on the second metal layer 5 The common electrode layer 6 includes a plurality of common electrode blocks arranged in an array, and the common electrode blocks are multiplexed as touch electrodes; the touch trace 7 is located on the second metal layer 5; the touch trace 7 is connected to the drain 51, The source electrode 52 , the data line 53 and the pixel electrode 4 are electrically insulated, and are electrically connected to the common electrode block of the common electrode layer 6 through the via hole 91 . Wherein, the array substrate includes a plurality of sub-pixel units defined by intersections of multiple rows of gate lines and multiple columns of data lines. In each sub-pixel unit, the source and drain are respectively located on both sides of the active layer, and the gate and the active layer The channel regions of the array substrates are arranged oppositely, and the source, drain, active layer and gate form a thin film transistor (Thin Film Transistor, TFT) in the array substrate.

需要说明的是,图1和图3中每个公共电极分别对应一条触控走线,在实际过程中,对于触控精度的要求是远远小于显示精度的,故一个公共电极会对应有多个子像素,每个公共电极通过过孔与一条触控走线电连接。图1所示的实施例中,相邻的两条数据线53和相邻的两条栅线22交叉围成一个子像素。相邻的多个不同颜色的子像素单元可以构成一个像素单元,例如,在行方向上相邻的一个红色子像素,一个绿色子像素和一个蓝色子像素可以构成一个像素,一个像素中的多个子像素根据灰阶的不同,可以进行不同颜色的显示。生产中,针对不同的设计要求,公共电极的数量是可以调整的,相同情形下,公共电极的数量越多,每个公共电极对应的子像素数量越少,由于每个公共电极仍然对应一条触控走线,所以触控走线和过孔的数量也会相应增加。It should be noted that each common electrode in Figure 1 and Figure 3 corresponds to a touch trace. In the actual process, the requirements for touch accuracy are far less than the display accuracy, so one common electrode corresponds to how many sub-pixels, and each common electrode is electrically connected to a touch trace through a via hole. In the embodiment shown in FIG. 1 , two adjacent data lines 53 and two adjacent gate lines 22 intersect to form a sub-pixel. Adjacent sub-pixel units of different colors can form a pixel unit, for example, a red sub-pixel, a green sub-pixel and a blue sub-pixel adjacent in the row direction can form a pixel, and multiple Each sub-pixel can display different colors according to different gray levels. In production, the number of common electrodes can be adjusted according to different design requirements. In the same situation, the more the number of common electrodes, the fewer the number of sub-pixels corresponding to each common electrode. Since each common electrode still corresponds to one contact Control wiring, so the number of touch wiring and vias will increase accordingly.

参考图1和图3,可以看出,在其他结构均相同的情形下,图1实施方式中,每个子像素对应设置一个公共电极,而图3中,每个像素,即每三个子像素,对应设置一个公共电极,图1实施方式中的公共电极数量大于图3实施方式中的公共电极数量,相应地,图1实施方式中触控走线和过孔的数量也大于图3实施方式中触控走线和过孔的数量。图3中的每个像素单元对应一条触控走线,相应地,每个像素单元对应一个用于连接触控走线和公共电极块的过孔,像素单元包括行方向上的三个不同颜色的子像素,减少过孔的数量,以简化制作阵列基板工艺的复杂度。Referring to FIG. 1 and FIG. 3, it can be seen that, under the condition that other structures are the same, in the embodiment of FIG. 1, each sub-pixel is correspondingly provided with a common electrode, while in FIG. Correspondingly, one common electrode is provided, and the number of common electrodes in the embodiment shown in FIG. 1 is greater than that in the embodiment shown in FIG. 3 . Correspondingly, the number of touch traces and vias in the embodiment shown in FIG. Number of touch traces and vias. Each pixel unit in Figure 3 corresponds to a touch trace. Correspondingly, each pixel unit corresponds to a via hole used to connect the touch trace and the common electrode block. The pixel unit includes three different colors in the row direction. Sub-pixels reduce the number of via holes to simplify the complexity of the array substrate manufacturing process.

需要说明的是,本实施例仅是示意性说明,在实际实施过程中,在一个阵列基板中,可以包括呈m*n的矩阵排列的块状公共电极,其中m>2,n>2,且m、n均为自然数,且该块状公共电极优选为矩形。每个块状公共电极可以对应覆盖i*j个子像素区域,其中i>2,j>2,且i、j均为自然数。由于在显示阶段,每个公共电极需要和像素电极之间形成电场,因此,每个公共电极需要覆盖各个子像素的开口区域,即,相邻两个公共电极之间形成的狭缝,在垂直于阵列基板所在平面的方向上,与扫描线或者数据线重叠。每个公共电极块通过一条触控走线连接到驱动芯片,在显示阶段,驱动芯片向每个公共电极输入公共电极信号,以此和各个像素电极之间形成电场。在触控阶段,驱动芯片向各个公共电极同时或者分时输入触控信号,通过检测每个公共电极,也即触控电极上的自电容变化,来检测触控位置。由于各个公共电极呈矩阵排列,且每个公共电极分别通过对应的触控走线连接到驱动芯片,可以同时检测各个公共电极上的自电容变化,以此实现多点触控检测。It should be noted that this embodiment is only a schematic illustration. In an actual implementation process, an array substrate may include block-shaped common electrodes arranged in a matrix of m*n, where m>2, n>2, In addition, both m and n are natural numbers, and the block-shaped common electrode is preferably rectangular. Each block-shaped common electrode can cover i*j sub-pixel areas correspondingly, where i>2, j>2, and both i and j are natural numbers. Since in the display phase, each common electrode needs to form an electric field with the pixel electrode, therefore, each common electrode needs to cover the opening area of each sub-pixel, that is, the slit formed between two adjacent common electrodes, in the vertical In the direction of the plane where the array substrate is located, it overlaps with the scanning line or the data line. Each common electrode block is connected to the driver chip through a touch wire. In the display stage, the driver chip inputs a common electrode signal to each common electrode to form an electric field with each pixel electrode. In the touch stage, the driver chip inputs touch signals to each common electrode at the same time or time-divisionally, and detects the touch position by detecting the self-capacitance change on each common electrode, that is, the touch electrode. Since each common electrode is arranged in a matrix, and each common electrode is connected to the driving chip through a corresponding touch trace, the self-capacitance change on each common electrode can be detected simultaneously, thereby realizing multi-touch detection.

本实施例中的阵列基板中,将漏极、源极、数据线和触控走线同层设置,通过一次掩膜版的构图工艺即可形成包括漏极、源极、数据线和触控走线的第二金属层,避免单独设置触控走线所在膜层,无需使用单独的掩膜版通过相应的构图工艺来制作触控走线层,能够简化阵列基板的制作过程,降低工艺流程复杂程度,减少掩膜版使用数量,生产成本低。In the array substrate in this embodiment, the drain, source, data lines, and touch wiring are arranged on the same layer, and the drain, source, data line, and touch wiring can be formed through a mask patterning process. The second metal layer of the wiring avoids separately setting the film layer where the touch wiring is located, and does not need to use a separate mask to make the touch wiring layer through the corresponding patterning process, which can simplify the manufacturing process of the array substrate and reduce the process flow The degree of complexity reduces the number of masks used, and the production cost is low.

可选地,如图1-图3所示,上述阵列基板还包括:第一绝缘层8,位于所述第一金属层2和所述有源层3之间。第一绝缘层用于隔绝栅极和半导体层以及第二金属层,本发明实施例的第一绝缘层无需使用掩膜版的构图工艺来形成图案,在实际过程中,若需要在第一绝缘层形成相应地图案也可通过额外的掩膜版来进行构图,以上均不限制本发明的保护范围。Optionally, as shown in FIGS. 1-3 , the above-mentioned array substrate further includes: a first insulating layer 8 located between the first metal layer 2 and the active layer 3 . The first insulating layer is used to isolate the gate, the semiconductor layer and the second metal layer. The first insulating layer in the embodiment of the present invention does not need to use a patterning process of a mask to form a pattern. In the actual process, if necessary, the first insulating layer The corresponding pattern of the layer formation can also be patterned through an additional mask, and the above does not limit the protection scope of the present invention.

其中,由于本实施例中阵列基板的第一绝缘层未设置过孔,故无需通过掩膜版的构图工艺来进行孔刻,从而减少了一次构图工艺,能够简化阵列基板的制作过程,降低工艺流程复杂程度,减少掩膜版使用数量,生产成本低。Wherein, since the first insulating layer of the array substrate in this embodiment is not provided with via holes, it is not necessary to carry out the hole engraving through the patterning process of the mask plate, thereby reducing one patterning process, which can simplify the manufacturing process of the array substrate and reduce the process cost. The complexity of the process reduces the number of masks used and the production cost is low.

可选地,如图1-图3所示,上述阵列基板还包括:第二绝缘层9,位于所述公共电极层6和所述第二金属层5之间;第二绝缘层9上设有过孔91。第二绝缘层用于隔绝第二金属层和公共电极层,第二金属层的触控走线需要连接公共电极层的公共电极块,第二绝缘层上设置有过孔,故第二绝缘层需要通过掩膜版的构图工艺来进行孔刻。Optionally, as shown in FIGS. 1-3 , the above-mentioned array substrate further includes: a second insulating layer 9 located between the common electrode layer 6 and the second metal layer 5 ; There are vias 91 . The second insulating layer is used to isolate the second metal layer and the common electrode layer. The touch traces of the second metal layer need to be connected to the common electrode block of the common electrode layer. The second insulating layer is provided with via holes, so the second insulating layer It is necessary to carry out the hole carving through the patterning process of the mask plate.

在实际生产过程中,在包围显示区的外围区域,往往设置有各种走线,例如,栅极驱动电路走线、连接驱动芯片和数据线的信号走线,连接触控走线和驱动芯片的走线。在非显示区布线的时候,往往会将第一金属层和第二金属层换线电连接,来实现不同的信号传输功能。由于第一绝缘层在涂布后,没有进行过孔刻蚀,此时,若要连接第一金属层和第二金属层,可以通过增加一次构图工艺来实现。也可以共同在第二绝缘层9上进行过孔91的构图工艺的步骤中,同时形成贯穿第一绝缘层8和第二绝缘层9的深过孔,此时,该深过孔暴露部分需要实现换线的第一金属层,在第二绝缘层形成和过孔91同层浅过孔,以暴露部分需要实现换线的第二金属层,在该深过孔和浅过孔中沉积和公共电极同层的连接电极,第一金属层和第二金属层通过贯穿深过孔和浅过孔的连接电极实现电连接。此时,不增加构图工艺,不增加工艺时间。In the actual production process, various traces are often provided in the peripheral area surrounding the display area, such as gate drive circuit traces, signal traces connecting the driver chip and data lines, and touch traces and driver chips. the routing. When wiring in the non-display area, the first metal layer and the second metal layer are often switched and electrically connected to realize different signal transmission functions. Since the first insulating layer is not etched via holes after coating, at this time, if the first metal layer and the second metal layer are to be connected, it can be realized by adding a patterning process. It is also possible to jointly form a deep via hole through the first insulating layer 8 and the second insulating layer 9 in the step of patterning the via hole 91 on the second insulating layer 9. At this time, the exposed part of the deep via hole needs to be To realize the first metal layer for changing the line, form a shallow via hole on the same layer as the via hole 91 in the second insulating layer, so as to expose the second metal layer that needs to realize the line changing, deposit and deposit in the deep via hole and the shallow via hole The common electrode is connected to the connecting electrode on the same layer, and the first metal layer and the second metal layer are electrically connected through the connecting electrodes passing through the deep via hole and the shallow via hole. At this time, the patterning process is not increased, and the process time is not increased.

需要说明的是,第一绝缘层和/或第二绝缘层的材料为氮化硅(SiNx)和氧化硅(SiOx)中的任意一种。It should be noted that the material of the first insulating layer and/or the second insulating layer is any one of silicon nitride (SiNx) and silicon oxide (SiOx).

可选地,所述漏极51与所述像素电极4直接电性连接。具体如图1-图3所示,像素电极位于栅极和栅线所在膜层的上方,像素电极与漏极之间通过搭接方式直接电性连接,而无需通过另设过孔的方式以导线连接,能够简化阵列基板的制作过程,降低工艺流程复杂程度。Optionally, the drain 51 is directly electrically connected to the pixel electrode 4 . Specifically, as shown in Figures 1-3, the pixel electrode is located above the film layer where the gate and gate line are located, and the pixel electrode and the drain are directly electrically connected by overlapping, without the need to set up additional via holes to The wire connection can simplify the manufacturing process of the array substrate and reduce the complexity of the process flow.

下面通过对触控走线与数据线的相对位置关系,对本发明实施例的触控走线位置的实施方式进行说明。The implementation manner of the position of the touch wiring in the embodiment of the present invention will be described below through the relative positional relationship between the touch wiring and the data line.

可选地,所述触控走线7与数据线53相邻设置,且触控走线7与所述数据线53平行。具体如图1-图3所示,所述触控走线7与数据线53相邻设置且相互平行,同时二者位于同一膜层,简化了制作阵列基板工艺的复杂度。并且由于两者平行设置,可以在阵列基板的对置基板上形成同时覆盖数据线和触控走线的遮光结构,将触控走线对显示透过率的影响降至最小。Optionally, the touch wiring 7 is arranged adjacent to the data line 53 , and the touch wiring 7 is parallel to the data line 53 . Specifically, as shown in FIGS. 1-3 , the touch wires 7 and the data wires 53 are arranged adjacent to each other and parallel to each other, and they are located in the same film layer, which simplifies the complexity of the manufacturing process of the array substrate. And because the two are arranged in parallel, a light-shielding structure covering both the data lines and the touch wiring can be formed on the opposite substrate of the array substrate, so as to minimize the influence of the touch wiring on the display transmittance.

本发明实施例中的阵列基板,通过将漏极、源极、数据线和触控走线同层设置,避免单独设置触控走线所在膜层,故无需使用单独的掩膜版并通过相应的构图工艺来制作触控走线层,减少一次掩膜版构图工艺;同时,通过将像素电极与漏极在不通过过孔的情况下直接电性连接,无需通过掩膜版的构图工艺来进行孔刻,再次减少一次掩膜版构图工艺;从而,能够简化阵列基板的制作过程,降低工艺流程复杂程度,减少掩膜版使用数量,生产成本低。In the array substrate in the embodiment of the present invention, by arranging the drain, the source, the data line and the touch line on the same layer, it is avoided to separately set the film layer where the touch line is located, so there is no need to use a separate mask and pass the corresponding The patterning process is used to make the touch wiring layer, which reduces the patterning process of a mask plate; at the same time, by directly electrically connecting the pixel electrode and the drain without passing through the via hole, there is no need to pass through the patterning process of the mask plate. Carrying out hole engraving reduces one mask patterning process again; thus, the manufacturing process of the array substrate can be simplified, the complexity of the process flow can be reduced, the number of masks used can be reduced, and the production cost is low.

另一方面,如图4所示,基于同一发明构思,本发明实施例提供了一种阵列基板的制作方法,包括:On the other hand, as shown in FIG. 4, based on the same inventive concept, an embodiment of the present invention provides a method for manufacturing an array substrate, including:

步骤410、在衬底基板上形成第一金属层,所述第一金属层包括栅极和栅线。Step 410 , forming a first metal layer on the substrate, the first metal layer including gates and gate lines.

具体地,步骤410通过第一道掩膜版构图工艺在衬底基板上第一金属层,然后在第一金属层覆盖第一绝缘层,由于第一绝缘层无需进行孔刻蚀,故无需使用掩膜版构图工艺,第一绝缘层位于第一金属层和有源层之间,保证栅极和源漏极之间电性绝缘。Specifically, in step 410, the first metal layer is formed on the base substrate through the first mask patterning process, and then the first metal layer is covered with the first insulating layer. Since the first insulating layer does not need to be etched, there is no need to use In the mask patterning process, the first insulating layer is located between the first metal layer and the active layer to ensure electrical insulation between the gate and the source and drain.

步骤420、在所述第一金属层上形成有源层。Step 420, forming an active layer on the first metal layer.

具体地,步骤420通过第二道掩膜版构图工艺在第一金属层上形成有源层,有源层即半导体层,其位于第一金属层上,同时亦位于第一绝缘层上,有源层基于对应栅极电压的大小选择导通或者断开源漏极。Specifically, in step 420, an active layer is formed on the first metal layer through the second mask patterning process, and the active layer is a semiconductor layer, which is located on the first metal layer and also on the first insulating layer. The source layer selectively turns on or turns off the source and drain based on the magnitude of the corresponding gate voltage.

步骤430、在所述栅极和栅线所在膜层上形成像素电极。Step 430 , forming pixel electrodes on the film layer where the gates and gate lines are located.

具体地,步骤430通过第三道掩膜版构图工艺在所述栅极和栅线所在膜层上形成像素电极,像素电极位于第一绝缘层上。步骤440、在所述有源层和所述像素电极上形成第二金属层和触控走线,其中,所述第二金属层包括漏极、源极和数据线,所述漏极与所述像素电极电性连接。Specifically, in step 430, a pixel electrode is formed on the film layer where the gate and the gate line are located through a third mask patterning process, and the pixel electrode is located on the first insulating layer. Step 440, forming a second metal layer and a touch wire on the active layer and the pixel electrode, wherein the second metal layer includes a drain, a source, and a data line, and the drain and the The pixel electrodes are electrically connected.

具体地,步骤440通过第四道掩膜版构图工艺在所述有源层和所述像素电极上形成第二金属层和触控走线,触控走线与漏极、源极、数据线和像素电极电性绝缘,触控走线和第二金属层同层设置,故省去了一道掩膜版构图工艺,漏极与像素电极之间以搭接的方式直接电性连接。另外,触控走线与数据线相邻设置,且触控走线与数据线平行。Specifically, in step 440, a second metal layer and touch wiring are formed on the active layer and the pixel electrode through the fourth mask patterning process, and the touch wiring is connected with the drain, source, and data lines. It is electrically insulated from the pixel electrode, and the touch trace is arranged on the same layer as the second metal layer, so a mask patterning process is omitted, and the drain electrode and the pixel electrode are directly electrically connected in an overlapping manner. In addition, the touch traces are arranged adjacent to the data lines, and the touch traces are parallel to the data lines.

步骤450、形成覆盖第二金属层的第二绝缘层,在所述第二绝缘层上形成过孔。Step 450 , forming a second insulating layer covering the second metal layer, and forming via holes on the second insulating layer.

具体地,第二金属层和触控走线所在膜层上覆盖有第二绝缘层,步骤450通过第五道掩膜版构图工艺在第二绝缘层上孔刻蚀形成过孔,该过孔位于触控走线上方。Specifically, the film layer where the second metal layer and the touch traces are located is covered with a second insulating layer. In step 450, vias are etched on the second insulating layer through the fifth mask patterning process. The via holes Located above the touch trace.

步骤460、在所述第二金属层上形成公共电极层,其中,所述公共电极层包括多个以阵列方式设置的公共电极块,所述公共电极块复用为触控电极,所述公共电极块通过所述过孔与所述触控走线电性连接。具体地,该公共电极层与所属第二金属层之间设置有第二绝缘层,该公共电极块通过位于第二绝缘层中的过孔与触控走线电性连接。Step 460, forming a common electrode layer on the second metal layer, wherein the common electrode layer includes a plurality of common electrode blocks arranged in an array, the common electrode blocks are multiplexed as touch electrodes, and the common electrode blocks are multiplexed as touch electrodes. The electrode block is electrically connected with the touch trace through the via hole. Specifically, a second insulating layer is disposed between the common electrode layer and the second metal layer, and the common electrode block is electrically connected to the touch wiring through a via hole in the second insulating layer.

在基于上述阵列基板的制备方法的基础上,下面对阵列基板的制备方法进行详细说明。具体如图5所述,上述制备方法的详细步骤具体如下:On the basis of the above-mentioned method for preparing the array substrate, the method for preparing the array substrate will be described in detail below. Specifically as shown in Figure 5, the detailed steps of the above preparation method are as follows:

步骤1、在衬底基板1上形成包括栅极和栅线的第一金属层2;Step 1, forming a first metal layer 2 including gates and gate lines on the base substrate 1;

其中,通过第一次掩膜版构图工艺,在衬底基板1上形成包括栅极和栅线的第一金属层2,栅极和栅线电性连接。形成第一金属层的工艺可以是先在衬底基板上沉积一层第一金属材料层,第一金属材料层的沉积方法可以是溅射等方法,可以和现有技术中沉积金属层的方法相同,在此不再赘述。然后在第一金属材料层上涂覆光刻胶,采用第一道掩膜版对光刻胶进行曝光。在曝光结束后,进行显影过程,显影过程中,曝光部分的光刻胶被洗去,未曝光部分的光刻胶仍旧保留在第一金属材料层上方。显影后对暴露出的第一金属材料层进行湿法刻蚀,未被刻蚀的部分即为被光刻胶保护的部分,该部分图案进行第一金属层。最后进行光刻胶剥离,第一金属层的构图过程即结束。Wherein, through the first mask patterning process, the first metal layer 2 including the gate and the gate line is formed on the base substrate 1, and the gate and the gate line are electrically connected. The process of forming the first metal layer can be to first deposit a layer of the first metal material layer on the base substrate, the deposition method of the first metal material layer can be methods such as sputtering, which can be compared with the method of depositing the metal layer in the prior art Same, no more details here. Then coat a photoresist on the first metal material layer, and use a first mask to expose the photoresist. After the exposure is finished, a developing process is carried out. During the developing process, the photoresist in the exposed part is washed away, and the photoresist in the unexposed part remains on the first metal material layer. After developing, perform wet etching on the exposed first metal material layer, and the unetched part is the part protected by the photoresist, and the first metal layer is patterned on this part. Finally, the photoresist is stripped, and the patterning process of the first metal layer is completed.

步骤2、在栅极和栅线所在的第一金属层2上形成第一绝缘层8;Step 2, forming a first insulating layer 8 on the first metal layer 2 where the gate and gate lines are located;

其中,第一绝缘层8未设置过孔,故无需通过掩膜版构图工艺来进行孔刻。Wherein, the first insulating layer 8 is not provided with a via hole, so there is no need to perform hole engraving through a mask patterning process.

步骤3、在第一绝缘层8上形成有源层3;Step 3, forming an active layer 3 on the first insulating layer 8;

其中,通过第二次掩膜版构图工艺,在第一绝缘层8上形成有源层3。同样的,有源层的形成也需要经过涂覆半导体材料层,如图光刻胶,光刻胶曝光显影,刻蚀,剥离光刻胶等过程。与形成第一金属层不同的是,半导体材料层的刻蚀一般采用干法刻蚀。其刻蚀工艺和刻蚀用材料和现有技术相同,在此不再赘述。Wherein, the active layer 3 is formed on the first insulating layer 8 through the second mask patterning process. Similarly, the formation of the active layer also needs to go through processes such as coating a semiconductor material layer, such as photoresist, exposing and developing the photoresist, etching, and stripping the photoresist. Different from forming the first metal layer, the etching of the semiconductor material layer generally adopts dry etching. The etching process and etching materials are the same as those in the prior art, and will not be repeated here.

步骤4、在栅极和栅线所在的第一金属层2上形成像素电极4;Step 4, forming a pixel electrode 4 on the first metal layer 2 where the gate and the gate line are located;

其中,通过第三次掩膜版构图工艺,在在栅极和栅线所在的第一金属层2上形成像素电极4。像素电极4和有源层3均位于第一绝缘8的上方,像素电极的形成过程和第一金属层的形成过程类似,在此不再赘述。Wherein, through the third mask patterning process, the pixel electrodes 4 are formed on the first metal layer 2 where the gates and gate lines are located. Both the pixel electrode 4 and the active layer 3 are located above the first insulating layer 8 , and the formation process of the pixel electrode is similar to the formation process of the first metal layer, which will not be repeated here.

步骤5、在有源层3和像素电极4上形成第二金属层5和触控走线7,第二金属层5包括漏极51、源极52和数据线;Step 5, forming a second metal layer 5 and a touch wire 7 on the active layer 3 and the pixel electrode 4, the second metal layer 5 includes a drain 51, a source 52 and a data line;

其中,通过第四次掩膜版构图工艺,在有源层3和像素电极4上形成第二金属层5和触控走线7,第二金属层5包括漏极51、源极52和数据线,触控走线与数据线相邻设置,且触控走线与所述数据线平行,第二金属层5和触控走线7同层设置,可以减少一次掩膜版使用次数;漏极51与像素电极4之间通过搭接方式直接电性连接,从而又减少了一次掩膜版使用次数。第二金属层和触控走线的形成过程和第一金属层的形成过程类似,在此不再赘述。Wherein, through the fourth mask patterning process, the second metal layer 5 and the touch wire 7 are formed on the active layer 3 and the pixel electrode 4, and the second metal layer 5 includes the drain electrode 51, the source electrode 52 and the data line, the touch line is arranged adjacent to the data line, and the touch line is parallel to the data line, and the second metal layer 5 and the touch line 7 are set on the same layer, which can reduce the number of times a mask is used; The electrodes 51 and the pixel electrodes 4 are directly electrically connected by overlapping, thereby reducing the number of times of using a mask. The formation process of the second metal layer and the touch wiring is similar to the formation process of the first metal layer, and will not be repeated here.

可选地,所述触控走线7与数据线53相邻设置,且触控走线7与所述数据线53平行。具体如图1-图3所示,所述触控走线7与数据线53相邻设置且相互平行,同时二者位于同一膜层,简化了制作阵列基板工艺的复杂度。并且由于两者平行设置,可以在阵列基板的对置基板上形成同时覆盖数据线和触控走线的遮光结构,将触控走线对显示透过率的影响降至最小。步骤6、在第二金属层5和触控走线7上形成包含漏出触控走线7的过孔91的第二绝缘层9;Optionally, the touch wiring 7 is arranged adjacent to the data line 53 , and the touch wiring 7 is parallel to the data line 53 . Specifically, as shown in FIGS. 1-3 , the touch wires 7 and the data wires 53 are arranged adjacent to each other and parallel to each other, and they are located in the same film layer, which simplifies the complexity of the manufacturing process of the array substrate. And because the two are arranged in parallel, a light-shielding structure covering both the data lines and the touch wiring can be formed on the opposite substrate of the array substrate, so as to minimize the influence of the touch wiring on the display transmittance. Step 6, forming a second insulating layer 9 including a via hole 91 leaking out of the touch wiring 7 on the second metal layer 5 and the touch wiring 7;

其中,通过第五次掩膜版构图工艺,在第二绝缘层9中形成漏出触控走线7的过孔91。第二绝缘层9的形成方法和有源层的形成方法相同,在此不再赘述。Wherein, through the fifth mask patterning process, a via hole 91 for leaking the touch trace 7 is formed in the second insulating layer 9 . The method for forming the second insulating layer 9 is the same as the method for forming the active layer, and will not be repeated here.

在实际生产过程中,在包围显示区的外围区域,往往设置有各种走线,例如,栅极驱动电路走线、连接驱动芯片和数据线的信号走线,连接触控走线和驱动芯片的走线。在非显示区布线的时候,往往会将第一金属层和第二金属层换线电连接,来实现不同的信号传输功能。由于第一绝缘层在涂布后,没有进行过孔刻蚀,此时,若要连接第一金属层和第二金属层,可以通过增加一次构图工艺来实现。也可以共同在第二绝缘层9上进行过孔91的构图工艺的步骤中,同时形成贯穿第一绝缘层8和第二绝缘层9的深过孔,此时,该深过孔暴露部分需要实现换线的第一金属层,在第二绝缘层形成和过孔91同层浅过孔,以暴露部分需要实现换线的第二金属层,在该深过孔和浅过孔中沉积和公共电极同层的连接电极,第一金属层和第二金属层通过贯穿深过孔和浅过孔的连接电极实现电连接。此时,不增加构图工艺,不增加工艺时间。In the actual production process, various traces are often provided in the peripheral area surrounding the display area, such as gate drive circuit traces, signal traces connecting the driver chip and data lines, and touch traces and driver chips. the routing. When wiring in the non-display area, the first metal layer and the second metal layer are often switched and electrically connected to realize different signal transmission functions. Since the first insulating layer is not etched via holes after coating, at this time, if the first metal layer and the second metal layer are to be connected, it can be realized by adding a patterning process. It is also possible to jointly form a deep via hole through the first insulating layer 8 and the second insulating layer 9 in the step of patterning the via hole 91 on the second insulating layer 9. At this time, the exposed part of the deep via hole needs to be To realize the first metal layer for changing the line, form a shallow via hole on the same layer as the via hole 91 in the second insulating layer, so as to expose the second metal layer that needs to realize the line changing, deposit and deposit in the deep via hole and the shallow via hole The common electrode is connected to the connecting electrode on the same layer, and the first metal layer and the second metal layer are electrically connected through the connecting electrodes passing through the deep via hole and the shallow via hole. At this time, the patterning process is not increased, and the process time is not increased.

步骤7、在第二金属层5上形成公共电极层6;Step 7, forming a common electrode layer 6 on the second metal layer 5;

其中,通过第六次掩膜版构图工艺,在第二金属层5上形成公共电极层6,公共电极层包括多个以阵列方式设置的公共电极块,公共电极块复用为触控电极,公共电极层6的公共电极块通过过孔91与触控走线7电性连接。Among them, through the sixth mask patterning process, a common electrode layer 6 is formed on the second metal layer 5. The common electrode layer includes a plurality of common electrode blocks arranged in an array, and the common electrode blocks are multiplexed as touch electrodes. The common electrode block of the common electrode layer 6 is electrically connected to the touch wire 7 through the via hole 91 .

综上,在本发明实施例中阵列基板的制备方法中,只需使用6次掩膜版构图工艺,和现有技术制备方法中需要8-10次掩膜版构图工艺相比,减少了掩膜版使用数量,简化了阵列基板的制作过程,降低了工艺流程复杂程度。To sum up, in the method for preparing the array substrate in the embodiment of the present invention, only 6 mask patterning processes are needed, which reduces the number of mask patterning processes compared with 8-10 mask patterning processes in the prior art preparation method. The number of stencils used simplifies the manufacturing process of the array substrate and reduces the complexity of the process flow.

如图6所示,本发明实施例还提供一种液晶显示面板,包括上述的阵列基板610、彩膜基板620和液晶层630。As shown in FIG. 6 , an embodiment of the present invention also provides a liquid crystal display panel, including the above-mentioned array substrate 610 , a color filter substrate 620 and a liquid crystal layer 630 .

其中,阵列基板610的具体结构和原理与上述实施例相同,在此不再赘述。Wherein, the specific structure and principle of the array substrate 610 are the same as those of the above-mentioned embodiments, and will not be repeated here.

本实施例中的液晶显示面板,通过在液晶显示面板中阵列基板的漏极、源极、数据线和触控走线同层设置,从而避免单独设置触控走线所在膜层;以及,像素电极与漏极在不通过过孔的情况下直接电性连接,从而无需通过掩膜版的构图工艺来进行孔刻;进而省去了两次掩膜版构图工艺,因此能够简化阵列基板的制作过程,降低工艺流程复杂程度,减少掩膜版使用数量,生产成本低。In the liquid crystal display panel in this embodiment, the drain electrode, the source electrode, the data line and the touch wiring line of the array substrate are arranged on the same layer in the liquid crystal display panel, so as to avoid separately setting the film layer where the touch wiring line is located; and, the pixel The electrode and the drain are directly electrically connected without passing through holes, so that there is no need to go through the patterning process of the mask plate for hole engraving; thus eliminating the need for two patterning processes of the mask plate, thus simplifying the fabrication of the array substrate process, reduce the complexity of the process, reduce the number of masks used, and reduce production costs.

如图7所示,本发明实施例还提供一种显示装置,包括上述的液晶显示面板700。As shown in FIG. 7 , an embodiment of the present invention further provides a display device, including the above-mentioned liquid crystal display panel 700 .

其中,液晶显示面板700的具体结构和原理与上述实施例相同,在此不再赘述。显示装置可以是例如触摸显示屏、手机、平板计算机、笔记本电脑、电纸书或电视机等任何具有液晶显示功能的电子设备。Wherein, the specific structure and principle of the liquid crystal display panel 700 are the same as those of the above-mentioned embodiments, and will not be repeated here. The display device may be any electronic device with a liquid crystal display function such as a touch screen, a mobile phone, a tablet computer, a notebook computer, an electronic paper book, or a television.

本实施例中的显示装置,通过在液晶显示面板中阵列基板的漏极、源极、数据线和触控走线同层设置,从而避免单独设置触控走线所在膜层;以及,像素电极与漏极在不通过过孔的情况下直接电性连接,从而无需通过掩膜版的构图工艺来进行孔刻;进而省去了两次掩膜版构图工艺,因此能够简化阵列基板的制作过程,降低工艺流程复杂程度,减少掩膜版使用数量,生产成本低。In the display device in this embodiment, the drain electrode, the source electrode, the data line and the touch wiring line of the array substrate are arranged on the same layer in the liquid crystal display panel, so as to avoid separately setting the film layer where the touch wiring line is located; and the pixel electrode It is directly electrically connected to the drain without passing through holes, so that there is no need to go through the patterning process of the mask plate to carry out the hole engraving; thus eliminating the need for two patterning processes of the mask plate, so the manufacturing process of the array substrate can be simplified , reduce the complexity of the process flow, reduce the number of masks used, and reduce the production cost.

以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明保护的范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the present invention. within the scope of protection.

Claims (12)

1. a kind of array base palte, it is characterised in that including:
Underlay substrate;
The first metal layer on the underlay substrate, the first metal layer includes grid and grid line;
Active layer on the first metal layer;
Pixel electrode in film layer where the grid and grid line;
Second metal layer on the active layer and the pixel electrode, the second metal layer include drain electrode, source electrode and Data wire, wherein, the drain electrode is electrically connected with the pixel electrode;
Common electrode layer in the second metal layer, the common electrode layer includes multiple public affairs set with array way Common electrode block, the public electrode block is multiplexed with touch control electrode;The array base palte also includes:
Touch-control cabling, positioned at the second metal layer;The touch-control cabling and the drain electrode, source electrode, data wire and pixel electrode It is electrically insulated, and is electrically connected with the public electrode block of the common electrode layer by via.
2. array base palte as claimed in claim 1, it is characterised in that the array base palte also includes:
First insulating barrier, between the first metal layer and the active layer.
3. array base palte as claimed in claim 1, it is characterised in that the array base palte also includes:
Second insulating barrier, between the common electrode layer and the second metal layer;Second insulating barrier was provided with Hole.
4. array base palte as claimed in claim 1, it is characterised in that the drain electrode directly electrically connects with the pixel electrode Connect.
5. array base palte as claimed in claim 1, it is characterised in that the touch-control cabling is disposed adjacent with the data wire, And the touch-control cabling is parallel with the data wire.
6. a kind of display panel, it is characterised in that including the array base palte as described in any one of Claims 1 to 5.
7. a kind of display device, it is characterised in that including display panel as claimed in claim 6.
8. a kind of preparation method of array base palte as claimed in claim 1, it is characterised in that including:
The first metal layer is formed on underlay substrate, the first metal layer includes grid and grid line;
Active layer is formed on the first metal layer;
Pixel electrode is formed in film layer where the grid and grid line;
Second metal layer and touch-control cabling are formed on the active layer and the pixel electrode, wherein, the second metal layer Including drain electrode, source electrode and data wire, the drain electrode is electrically connected with the pixel electrode;
The second insulating barrier of the covering second metal layer is formed, via is formed on second insulating barrier;
Common electrode layer is formed in the second metal layer, wherein, the common electrode layer includes that multiple is set with array way The public electrode block put, the public electrode block is multiplexed with touch control electrode, the public electrode block by the via with it is described Touch-control cabling is electrically connected with.
9. the preparation method of array base palte as claimed in claim 8, it is characterised in that methods described also includes:
The first insulating barrier is formed between the first metal layer and the active layer.
10. the preparation method of array base palte as claimed in claim 8, it is characterised in that methods described also includes:
The second insulating barrier, and the shape on second insulating barrier are formed between the common electrode layer and the second metal layer Into via.
The preparation method of 11. array base paltes as claimed in claim 8, it is characterised in that the drain electrode and the pixel electrode Directly it is electrically connected with.
The preparation method of 12. array base paltes as claimed in claim 8, it is characterised in that the touch-control cabling and the data Line is disposed adjacent, and the touch-control cabling is parallel with the data wire.
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CN104536632A (en) * 2015-01-26 2015-04-22 京东方科技集团股份有限公司 Embedded type touch screen and display device
CN105425490A (en) * 2016-01-04 2016-03-23 京东方科技集团股份有限公司 Array substrate and display device

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CN107505793A (en) * 2017-09-27 2017-12-22 上海天马微电子有限公司 Array substrate and display device
US10896921B2 (en) 2018-04-28 2021-01-19 Wuhan China Star Optoelectronics Technology Co., Ltd. Manufacturing method of array substrate
CN108682653A (en) * 2018-04-28 2018-10-19 武汉华星光电技术有限公司 Array substrate and preparation method thereof
CN108682653B (en) * 2018-04-28 2021-11-23 武汉华星光电技术有限公司 Array substrate and manufacturing method thereof
CN109683743A (en) * 2018-12-24 2019-04-26 武汉华星光电技术有限公司 A kind of touch-control display panel and electronic device
WO2020133808A1 (en) * 2018-12-29 2020-07-02 武汉华星光电技术有限公司 Array substrate and manufacture method therefor
CN110516637A (en) * 2019-08-30 2019-11-29 上海中航光电子有限公司 Array substrate, manufacturing method thereof, and display device
CN110516637B (en) * 2019-08-30 2021-11-26 上海中航光电子有限公司 Array substrate, manufacturing method thereof and display device
CN111367431A (en) * 2020-02-25 2020-07-03 京东方科技集团股份有限公司 Array substrate and display device
US11928273B2 (en) 2020-02-25 2024-03-12 Wuhan Boe Optoelectronics Technology Co., Ltd. Array substrate and display device
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US20240395829A1 (en) * 2022-01-28 2024-11-28 Hefei Xinsheng Optoelectronics Technology Co., Ltd. Display substrate and display device
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