CN106856202A - One kind buries type metal grate generation method and method for making image sensor - Google Patents
One kind buries type metal grate generation method and method for making image sensor Download PDFInfo
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- CN106856202A CN106856202A CN201611217440.8A CN201611217440A CN106856202A CN 106856202 A CN106856202 A CN 106856202A CN 201611217440 A CN201611217440 A CN 201611217440A CN 106856202 A CN106856202 A CN 106856202A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 91
- 239000002184 metal Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000206 photolithography Methods 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 238000005019 vapor deposition process Methods 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- 239000007787 solid Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
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Abstract
本发明涉及一种埋藏型金属栅格生成方法及图像传感器制造方法，包括对半导体基底上部待生成金属栅格区进行光刻，以在所述待生成金属栅格区形成基底层材质栅格；在所述基底层材质栅格的侧壁生成金属膜层，以生成金属栅格。本发明的有益效果是：本发明金属膜层的金属栅格与现有技术中的实心金属栅格在挡光性上具有完全相同的等效性；与现有技术相比，其只需进行一次光刻，且无需生成金属层，有效简化制程流程，降低制程成本；且对半导体基底上部待生成金属栅格区进行光刻时，可直接在平坦化的半导体基底的上表面进行抗反射层和光阻层的涂覆，提高涂覆均匀性，进一步提高光刻效果，提高生成的金属栅格的精度。
The invention relates to a method for generating a buried metal grid and a method for manufacturing an image sensor, comprising performing photolithography on a metal grid region to be generated on the upper part of a semiconductor substrate, so as to form a material grid of a base layer in the metal grid region to be generated; A metal film layer is formed on the sidewall of the material grid of the base layer to form a metal grid. The beneficial effects of the present invention are: the metal grid of the metal film layer of the present invention and the solid metal grid of the prior art have exactly the same equivalence on the light-shielding property; Compared with the prior art, it only needs to carry out One-time photolithography without the need to generate a metal layer, which effectively simplifies the process flow and reduces the process cost; and when performing photolithography on the upper part of the semiconductor substrate to be formed with a metal grid area, the anti-reflection layer can be directly formed on the upper surface of the planarized semiconductor substrate And the coating of the photoresist layer improves the coating uniformity, further improves the photolithography effect, and improves the precision of the generated metal grid.
Description
技术领域technical field
本发明涉及半导体制造技术领域，特别涉及一种埋藏型金属栅格生成方法及图像传感器制造方法。The invention relates to the technical field of semiconductor manufacturing, in particular to a method for generating a buried metal grid and a method for manufacturing an image sensor.
背景技术Background technique
现有图像传感器的像素阵列区的埋藏型金属栅格的生成方法为：采用光刻完全去除半导体基底的像素阵列区的待生成金属栅格区基底层，然后在半导体基底上沉积金属层，最后对金属层进行光刻，以在像素阵列区形成金属栅格。The generation method of the buried metal grid in the pixel array area of the existing image sensor is: using photolithography to completely remove the base layer of the metal grid area to be generated in the pixel array area of the semiconductor substrate, then depositing a metal layer on the semiconductor substrate, and finally Photolithography is performed on the metal layer to form a metal grid in the pixel array area.
但是，由于光刻完全去除半导体基底的像素阵列区的待生成金属栅格区基底层后，半导体基底的像素阵列区和非像素阵列区存在高度差，其易导致对金属层进行光刻过程中，抗反射层和光阻层的涂覆不均匀，进一步影响光刻效果，降低生成的金属栅格的精度，导致图像传感器色彩失真。However, after photolithography completely removes the base layer of the metal grid region to be generated in the pixel array region of the semiconductor substrate, there is a height difference between the pixel array region and the non-pixel array region of the semiconductor substrate, which easily leads to the process of photolithography on the metal layer. , the anti-reflection layer and the photoresist layer are not uniformly coated, which further affects the photolithography effect, reduces the precision of the generated metal grid, and causes color distortion of the image sensor.
发明内容Contents of the invention
本发明目的是提供一种埋藏型金属栅格生成方法及图像传感器制造方法，解决现有技术中存在的上述问题。The object of the present invention is to provide a method for generating a buried metal grid and a method for manufacturing an image sensor, so as to solve the above-mentioned problems in the prior art.
本发明解决上述技术问题的技术方案如下：The technical scheme that the present invention solves the problems of the technologies described above is as follows:
一种埋藏型金属栅格生成方法，包括如下步骤：A method for generating a buried metal grid, comprising the steps of:
步骤1，对半导体基底上部待生成金属栅格区进行光刻，以在所述待生成金属栅格区形成基底层材质栅格；Step 1, performing photolithography on the metal grid area to be formed on the upper part of the semiconductor substrate, so as to form a material grid of the base layer in the metal grid area to be formed;
步骤2，在所述基底层材质栅格的侧壁生成金属膜层，以生成金属栅格。Step 2, forming a metal film layer on the sidewall of the material grid of the base layer to form a metal grid.
本发明的有益效果是：本发明金属膜层的金属栅格与现有技术中的实心金属栅格在挡光性上具有完全相同的等效性；与现有技术相比，其只需进行一次光刻，且无需生成金属层，有效简化制程流程，降低制程成本；且对半导体基底上部待生成金属栅格区进行光刻时，可直接在平坦化的半导体基底的上表面进行抗反射层和光阻层的涂覆，提高涂覆均匀性，进一步提高光刻效果，提高生成的金属栅格的精度。The beneficial effect of the present invention is: the metal grid of the metal film layer of the present invention and the solid metal grid in the prior art have exactly the same equivalence on the light-shielding property; Compared with the prior art, it only needs to carry out One-time photolithography, without the need to generate metal layers, effectively simplifies the process flow and reduces process costs; and when performing photolithography on the upper part of the semiconductor substrate to be formed with a metal grid area, the anti-reflection layer can be directly formed on the upper surface of the planarized semiconductor substrate And the coating of the photoresist layer improves the coating uniformity, further improves the photolithography effect, and improves the precision of the generated metal grid.
在上述技术方案的基础上，本发明还可以做如下改进。On the basis of the above technical solutions, the present invention can also be improved as follows.
进一步，所述步骤2包括如下步骤：Further, said step 2 includes the following steps:
步骤21，在光刻后的半导体基底的上表面使用汽相沉积工艺生成金属膜层；Step 21, using a vapor deposition process to form a metal film layer on the upper surface of the semiconductor substrate after photolithography;
步骤22，将具有所述金属膜层的半导体基底的上表面暴露于蚀刻剂下，以去除所述基底层材质栅格的侧壁以外的其它部位处的所述金属膜层，保留所述基底层材质栅格的侧壁处的所述金属膜层，以生成金属栅格。Step 22, exposing the upper surface of the semiconductor substrate with the metal film layer to an etchant, so as to remove the metal film layer at other positions other than the sidewalls of the material grid of the base layer, and retain the base layer. The metal film layer at the sidewall of the underlying material grid to generate a metal grid.
采用上述进一步方案的有益效果是，有效利用汽相沉积工艺中，侧壁处沉积厚度大于水平面处沉积厚度，以及蚀刻工艺中侧壁处和水平面处蚀刻速度一样的原理，在基底层材质栅格的侧壁生成金属膜层，工艺简单，且金属膜层均匀性好。The beneficial effect of adopting the above further scheme is that, in the vapor deposition process, the deposition thickness at the side wall is greater than that at the horizontal plane, and the principle that the etching rate at the side wall is the same as at the horizontal plane in the etching process, the material grid of the base layer The metal film layer is formed on the side wall, the process is simple, and the uniformity of the metal film layer is good.
进一步，所述汽相沉积工艺为化学汽相沉积或物理汽相沉积。Further, the vapor deposition process is chemical vapor deposition or physical vapor deposition.
进一步，所述金属膜层的材质为氮化钛、氮化钽或钨。Further, the material of the metal film layer is titanium nitride, tantalum nitride or tungsten.
进一步，所述蚀刻剂为干蚀刻剂或湿蚀刻剂。Further, the etchant is a dry etchant or a wet etchant.
进一步，所述干蚀刻剂为氧、氮、氢、氩和氟类中的一种或多种的蚀刻化学物；所述湿蚀刻剂为氟氢酸。Further, the dry etchant is one or more etching chemicals selected from oxygen, nitrogen, hydrogen, argon and fluorine; the wet etchant is hydrofluoric acid.
本发明的另一技术方案如下：Another technical solution of the present invention is as follows:
一种图像传感器制造方法，采用上述一种埋藏型金属栅格生成方法，在图像传感器的像素阵列区生成埋藏型金属栅格。A method for manufacturing an image sensor, using the method for generating a buried metal grid to generate a buried metal grid in the pixel array area of the image sensor.
本发明的有益效果是：有效简化制程流程，降低制程成本，提高生成的金属栅格的精度，进一步提高图像传感器的色彩还原性。The invention has the beneficial effects of effectively simplifying the process flow, reducing the cost of the process, improving the precision of the generated metal grid, and further improving the color reproduction of the image sensor.
附图说明Description of drawings
图1为本发明一种埋藏型金属栅格生成方法的流程图；Fig. 1 is a flow chart of a method for generating a buried metal grid of the present invention;
图2为本发明一种埋藏型金属栅格生成方法中待生成金属栅格区结构示意图；2 is a schematic diagram of the structure of the metal grid area to be generated in a method for generating a buried metal grid according to the present invention;
图3为本发明一种埋藏型金属栅格生成方法中基底层材质栅格结构示意图；Fig. 3 is a schematic diagram of the grid structure of the base layer material in a method for generating a buried metal grid according to the present invention;
图4为本发明一种埋藏型金属栅格生成方法中金属栅格结构示意图；4 is a schematic diagram of a metal grid structure in a method for generating a buried metal grid according to the present invention;
图5为本发明一种埋藏型金属栅格生成方法中汽相沉积工艺生成金属膜层结构示意图。FIG. 5 is a schematic diagram of the structure of a metal film formed by a vapor deposition process in a method for forming a buried metal grid according to the present invention.
附图中，各标号所代表的部件列表如下：In the accompanying drawings, the list of parts represented by each label is as follows:
1、半导体基底，11、待生成金属栅格区，111、基底层材质栅格，112、金属膜层，2、金属栅格。1. Semiconductor substrate, 11. Metal grid area to be generated, 111. Base layer material grid, 112. Metal film layer, 2. Metal grid.
具体实施方式detailed description
以下结合附图对本发明的原理和特征进行描述，所举实例只用于解释本发明，并非用于限定本发明的范围。The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
如图1所示，为本发明实施例1所述一种埋藏型金属栅格生成方法，包括如下步骤：As shown in Figure 1, it is a method for generating a buried metal grid according to Embodiment 1 of the present invention, which includes the following steps:
步骤1，对半导体基底1上部待生成金属栅格区11进行光刻，以在所述待生成金属栅格区11形成基底层材质栅格111，如图2和图3所示；Step 1, photolithography is performed on the metal grid area 11 to be formed on the upper part of the semiconductor substrate 1, so as to form a base layer material grid 111 in the metal grid area 11 to be formed, as shown in FIGS. 2 and 3 ;
步骤2，在所述基底层材质栅格111的侧壁生成金属膜层112，以生成金属栅格2，如图4所示。Step 2, forming a metal film layer 112 on the sidewall of the material grid 111 of the base layer to form a metal grid 2, as shown in FIG. 4 .
本发明实施例2所述一种埋藏型金属栅格生成方法，在实施例1的基础上，所述步骤2包括如下步骤：The method for generating a buried metal grid described in Embodiment 2 of the present invention, on the basis of Embodiment 1, the step 2 includes the following steps:
步骤21，在光刻后的半导体基底1的上表面使用汽相沉积工艺生成金属膜层112，如图5所示；Step 21, using a vapor deposition process to form a metal film layer 112 on the upper surface of the semiconductor substrate 1 after photolithography, as shown in FIG. 5 ;
步骤22，将具有所述金属膜层112的半导体基底1的上表面暴露于蚀刻剂下，以去除所述基底层材质栅格111的侧壁以外的其它部位处的所述金属膜层112，保留所述基底层材质栅格111的侧壁处的所述金属膜层112，以生成金属栅格2。Step 22, exposing the upper surface of the semiconductor substrate 1 with the metal film layer 112 to an etchant, so as to remove the metal film layer 112 at other positions other than the sidewalls of the material grid 111 of the base layer, The metal film layer 112 at the sidewall of the base layer material grid 111 is retained to form a metal grid 2 .
本发明实施例3所述一种埋藏型金属栅格生成方法，在实施例2的基础上，所述汽相沉积工艺为化学汽相沉积或物理汽相沉积。In the method for forming a buried metal grid described in Embodiment 3 of the present invention, on the basis of Embodiment 2, the vapor deposition process is chemical vapor deposition or physical vapor deposition.
本发明实施例4所述一种埋藏型金属栅格生成方法，在实施例2或3的基础上，所述金属膜层112的材质为氮化钛、氮化钽或钨。In the method for generating a buried metal grid according to Embodiment 4 of the present invention, on the basis of Embodiment 2 or 3, the material of the metal film layer 112 is titanium nitride, tantalum nitride or tungsten.
本发明实施例5所述一种埋藏型金属栅格生成方法，在实施例2至4任一实施例的基础上，所述蚀刻剂为干蚀刻剂或湿蚀刻剂。In the method for forming a buried metal grid according to Embodiment 5 of the present invention, on the basis of any one of Embodiments 2 to 4, the etchant is a dry etchant or a wet etchant.
本发明实施例6所述一种埋藏型金属栅格生成方法，在实施例5的基础上，所述干蚀刻剂为氧、氮、氢、氩和氟类中的一种或多种的蚀刻化学物；所述湿蚀刻剂为氟氢酸。A buried metal grid generation method described in Embodiment 6 of the present invention, on the basis of Embodiment 5, the dry etchant is one or more of oxygen, nitrogen, hydrogen, argon and fluorine Chemicals; the wet etchant is hydrofluoric acid.
本发明实施例7所述一种图像传感器制造方法，采用实施例1至6任一所述一种埋藏型金属栅格生成方法，在图像传感器的像素阵列区生成埋藏型金属栅格。The method for manufacturing an image sensor described in Embodiment 7 of the present invention adopts the method for generating a buried metal grid described in any one of Embodiments 1 to 6 to generate a buried metal grid in the pixel array area of the image sensor.
以上所述仅为本发明的较佳实施例，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection of the present invention. within range.
Claims (7)
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130207213A1 (en) * | 2012-02-14 | 2013-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Grids in Backside Illumination Image Sensor Chips and Methods for Forming the Same |
| CN103378111A (en) * | 2012-04-17 | 2013-10-30 | 台湾积体电路制造股份有限公司 | Metal grid in backside illumination image sensor chips and methods for forming the same |
| US9799697B2 (en) * | 2014-04-25 | 2017-10-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130207213A1 (en) * | 2012-02-14 | 2013-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Grids in Backside Illumination Image Sensor Chips and Methods for Forming the Same |
| CN103378111A (en) * | 2012-04-17 | 2013-10-30 | 台湾积体电路制造股份有限公司 | Metal grid in backside illumination image sensor chips and methods for forming the same |
| US9799697B2 (en) * | 2014-04-25 | 2017-10-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters |
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