CN106849828A - A kind of MOSFET parallel current-equalizing circuits based on fault diagnosis - Google Patents
A kind of MOSFET parallel current-equalizing circuits based on fault diagnosis Download PDFInfo
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Abstract
A kind of MOSFET parallel current-equalizing circuits based on fault diagnosis, including main control unit and at least two-way MOSFET parallel branches, main control unit and are attached per between the MOSFET parallel branches of road by fault detection unit；The signal acquisition of each branch road is respectively completed per road MOSFET parallel branches, main control unit judges whether branch road work is normal, and respectively each branch road sends corresponding drive signal according to the signal of collection；Fault detection unit carries out excessively stream judgement according to the road current signal for receiving, and the drive signal of final output is determined according to excessively stream judged result, the under-voltage signal of driving for receiving and drive signal integrity detection signal；Each MOSFET parallel branch has an independent drive signal in the present invention, independent fault detection unit, can with detection branch electric current, temperature, whether gate-drive under-voltage and whether drive signal complete.The present invention also achieves the fault detect to parallel branch while realizing parallel branch and flowing, it is ensured that reliability is higher when multiple branch circuit parallel connections work.
Description
Technical field
The present invention relates to electric and electronic technical field, and in particular to a kind of parallel current-sharing electricity comprising fault detection unit
Road.
Background technology
Parallel current-equalizing circuit is mainly used in motor driver.Current motor driver mainly using IGBT or
MOSFET makees main power device, and MOSFET has the advantages that less expensive, small volume compared with IGBT, especially low in constant power
Under voltage regime, MOSFET realizes the power drive mode of low-voltage and high-current compared with IGBT more easily by parallel way.
While many MOSFET parallel connections meet high current power drive, the stream of parallel branch is also particularly important.It is existing
Some parallel current-equalizing circuit major parts are passively to flow mode, i.e., the drive signal in each loop in parallel is shared, according to power
Itself control characteristic and corresponding circuit of device reach and flow effect, but due to power device inherent parameters and circuit parameter
Otherness, can cause the uneven problem of electric current distribution occur when device is in parallel to be applied.And when parallel branch breaks down, nothing
Method is judged and is isolated in time, when serious, relevant parallel power device can be made to overload and damage.
The content of the invention
Technology solve problem of the invention is：Overcome the deficiencies in the prior art, there is provided a kind of based on fault diagnosis
MOSFET parallel current-equalizing circuits.
Technical solution of the invention is：A kind of MOSFET parallel current-equalizing circuits based on fault diagnosis, including master control
Unit and at least two-way MOSFET parallel branches, fault detection unit is passed through between main control unit and every road MOSFET parallel branches
It is attached；
Include fault collection unit and the driver element comprising MOSFET per road MOSFET parallel branches；Per road MOSFET
The electric current that temperature and MOSFET when fault collection unit collection MOSFET in parallel branch works pass through when opening, will adopt
The under-voltage signal of the driving of above-mentioned signal and driver element of collection is sent to main control unit；It is above-mentioned in addition to temperature signal by what is gathered
The under-voltage signal of the driving of all signals and driver element send to fault detection unit；
Drive signal integrity detection signal and MOSFET of the main control unit collection per the transmission of road fault detection unit are simultaneously
The signal that connection branch road sends, and judge whether normal per road MOSFET parallel branches working condition according to the signal of collection；According to
Judged result, sends the fault detection unit of isolation drive signal to the abnormal branch road of correspondence, respectively to all normal MOSFET
Parallel branch produces consistent drive signal, with reference to the current signal of the normal MOSFET parallel branches of collection, respectively to normal
The drive signal level width of MOSFET parallel branches is adjusted compensation, obtains the regulation of the normal MOSFET parallel branches in every road
Drive signal is simultaneously sent to corresponding fault detection unit；
Excessively stream is carried out per the corresponding fault detection unit of road MOSFET parallel branches according to the road current signal for receiving to sentence
It is disconnected, final output is determined according to excessively stream judged result, the under-voltage signal of driving for receiving and drive signal integrity detection signal
Drive signal；Described drive signal integrity detection signal is the isolation drive signal or product sent according to main control unit
Raw consistent drive signal and the drive signal of the final output for being currently able to collect carry out what is produced after uniformity judgement
Signal, the initial value of drive signal integrity detection signal is high level；
Driver element comprising MOSFET is operated according to the final drive signal for receiving.
Further, described main control unit is adjusted to the drive signal level width of normal MOSFET parallel branches
The step of compensation, is as follows：
Assuming that currently having m MOSFET parallel branch normal work, m parallel branch electric current is respectively Ii (i=1~m),
Electric current arithmetic mean of instantaneous value is I, then Ii-I is the difference of each parallel branch electric current and current average, therefore, take-t* (Ii-
I)/Ii is the time to the adjustment of each parallel branch drive signal high level, and t is the cycle of drive signal；As Ii ＞ I, Ying Jiang
The branch road drive signal high level lasting time adjusts-t* (Ii-I)/Ii, that is, reduce t* (Ii-I)/Ii, low duration
Increase t* (Ii-I)/Ii；Work as Ii<During I, the branch road drive signal high level lasting time should be adjusted-t* (Ii-I)/Ii, i.e.,
Increase t* (I-Ii)/Ii, low duration reduces t* (Ii-I)/Ii.
Further, the determination step of described drive signal integrity detection signal is as follows：
By main control unit send isolation drive signal or generation consistent drive signal be currently able to collect
The drive signal of final output carry out XOR treatment, when two different times of signal exceed threshold time, be output as height
Level, then export low level through not gate；Otherwise, high level is exported through not gate；The signal exported by not gate is drive signal
Integrity detection signal.
Further, described threshold time is isolation drive signal or the consistent drive of generation of main control unit output
The 4-6% of dynamic signal period.
Further, RC filter circuits are increased after threshold time in XOR by processing to be adjusted.
Further, fault detection unit is realized by the way of hardware.
Further, whether main control unit judges normal per road MOSFET parallel branches working condition according to the signal of collection
Implementation it is as follows：
(1) whether the drive signal integrity detection signal for judging certain branch road for collecting is high level, if high level,
Step (2) is then performed, otherwise, assert that the branch road is abnormal；
(2) whether the under-voltage signal of driving for judging certain branch road for collecting is high level, if high level, then performs step
(3), otherwise, assert that the branch road is abnormal；
(3) judge there are a few road MOSFET parallel branches, when 2 road MOSFET parallel branches are only existed, main control unit is straight
Connect identification two-way working condition normal；When more than two-way, go to step (3)；
(4) the electric current baseline for comparing is determined, described electric current baseline is that the current signal of all branch roads of collection is removed most
Greatly, the average after minimum two values, goes to step (4)；
(5) current signal of all branch roads for gathering make the difference comparing with the baseline for determining, when difference is more than selected
With the 20% of the rated current of MOSFET, assert that the branch road is abnormal, otherwise go to step (5)；
(6) temperature baselines for comparing are determined, described electric current baseline is that the temperature signal of all branch roads of collection is removed most
Greatly, the average after minimum two values, goes to step (6)；
(7) temperature signal of all branch roads for gathering make the difference comparing with the temperature baselines for determining, when difference is more than A
When, assert that the branch road is abnormal, otherwise normally；The scope of A is 20 degree~50 degree.
Further, the excessively stream of described fault detection unit judges the volume that the threshold current for using is selected MOSFET
Determine the 90% of electric current.
The present invention has the beneficial effect that compared with prior art：
Each MOSFET parallel branch has independent drive signal, independent fault detection unit, Ke Yijian in the present invention
Survey branch current, temperature, whether gate-drive is under-voltage and whether drive signal is complete.
The present invention also achieves the fault detect to parallel branch, it is ensured that many while realizing parallel branch and flowing
Reliability is higher when individual branch circuit parallel connection works.
The present invention employs soft and hardware classification failure handling mechanisms, the software processing machine for hardware for failure
System is tighter.For emergency (being presented as that parallel branch electric current increases to a predetermined value suddenly), hardware is directly isolated.
For non-emergent failure, hardware, software classification treatment mechanism are taken, main control chip gathers electric current, temperature by signal sampling unit
Degree and fault-signal, are comprehensively judged by electric current, temperature and fault-signal and are predicted parallel branch working condition, to having
The parallel branch of potential faults is isolated.
Fault detection part of the present invention is detected that drive signal integrality is judged in electric power to drive signal integrality
Electronic applications application is also less.
Brief description of the drawings
Fig. 1 is MOSFET parallel branches schematic diagram of the present invention；
Fig. 2 is main control unit of the present invention and fault detection unit schematic diagram all the way；
Fig. 3 is the corresponding fault detection unit schematic diagram of one MOSFET parallel branch of the present invention；
Fig. 4 is that drive signal integrity detection threshold time of the present invention sets schematic diagram.
Specific embodiment
Below in conjunction with the accompanying drawings and example elaborates to the present invention.
As shown in figure 1, a kind of MOSFET parallel current-equalizing circuits based on fault diagnosis, including main control unit and at least two-way
MOSFET parallel branches, are attached between main control unit and every road MOSFET parallel branches by fault detection unit；Below
Every part is described in detail respectively.
(1) MOSFET parallel branches
Include fault collection unit and the driver element comprising MOSFET per road MOSFET parallel branches；Per road MOSFET
The electric current that temperature and MOSFET when fault collection unit collection MOSFET in parallel branch works pass through when opening, will adopt
The under-voltage signal of the driving of above-mentioned signal and driver element of collection is sent to main control unit；It is above-mentioned in addition to temperature signal by what is gathered
The under-voltage signal of the driving of all signals and driver element send to fault detection unit；
It should be noted that drive under-voltage signal independently to be sent by driving chip in this example, signal during normal work
It is height, when gate-drive is under-voltage, the signal is low level.If the driving chip in driver element can not independently send the signal
When, using circuit is increased can measure gate drive voltage value and obtain the signal by the way of carrying out multilevel iudge.
(2) main control unit
As shown in Fig. 2 main control unit includes signal gathering unit, main control chip DSP and adjustment unit in this example.Signal is adopted
Collection unit completes the Signals collecting function in main control unit.Main control chip DSP is judged per road MOSFET simultaneously according to the signal of collection
Whether connection branch road working condition is normal；According to judged result, the failure inspection of isolation drive signal to the abnormal branch road of correspondence is sent
Unit is surveyed, consistent drive signal is produced to all normal MOSFET parallel branches respectively；Adjustment unit receives master control DSP signals
Produce all drive signals, with reference to collection normal MOSFET parallel branches current signal, respectively to normal MOSFET simultaneously
The drive signal level width for joining branch road is adjusted compensation, obtains the regulation drive signal of the normal MOSFET parallel branches in every road
And send to corresponding fault detection unit.
1st, main control chip DSP
Whether main control chip DSP judges normally realize per road MOSFET parallel branches working condition according to the signal of collection
Mode is as follows：
(1) whether the drive signal integrity detection signal for judging certain branch road for collecting is high level, if high level,
Step (2) is then performed, otherwise, assert that the branch road is abnormal；
(2) whether the under-voltage signal of driving for judging certain branch road for collecting is high level, if high level, then performs step
(3), otherwise, assert that the branch road is abnormal；
(3) judge there are a few road MOSFET parallel branches, when 2 road MOSFET parallel branches are only existed, main control unit is straight
Connect identification two-way working condition normal；When more than two-way, go to step (3)；
(4) the electric current baseline for comparing is determined, described electric current baseline is that the current signal of all branch roads of collection is removed most
Greatly, the average after minimum two values, goes to step (4)；
(5) current signal of all branch roads for gathering make the difference comparing with the baseline for determining, when difference is more than selected
With the 20% of the rated current of MOSFET, assert that the branch road is abnormal, otherwise go to step (5)；
(6) temperature baselines for comparing are determined, described electric current baseline is that the temperature signal of all branch roads of collection is removed most
Greatly, the average after minimum two values, goes to step (6)；
(7) temperature signal of all branch roads for gathering make the difference comparing with the temperature baselines for determining, when difference is more than A
When (scope of A be 20 degree~50 degree), assert that the branch road is abnormal, otherwise normally.
2nd, adjustment unit
Adjustment unit gathers parallel branch current signal, runs equal flow algorithm wide to the high level of parallel branch drive signal
Degree (high level correspondence MOSFET service times) is adjusted, compensates, and reaches each parallel branch electric current and flows effect.
Adjustment unit uses CPLD hardware controls modes, the electric current of each parallel branch, fault output signal, master in this example
The drive signal that control chip DSP sends is input into adjustment unit, and adjustment unit is adjusted often according to the electric current of each parallel branch
The MOSFET service times of individual parallel branch, comprise the steps of：
Assuming that current have the (drive that total failare output signal sends for low level or main control chip DSP of m branch road normal work
Dynamic signal is normal), the m parallel branch of normal work is taken to be adjusted, m parallel branch electric current be respectively Ii (i=1~
M), electric current arithmetic mean of instantaneous value is I, then Ii-I is the difference of each parallel branch electric current and current average, therefore, take-t*
(Ii-I)/Ii is the time to the adjustment of each parallel branch drive signal high level, and t is the cycle of drive signal.As Ii ＞ I,
The branch road drive signal high level lasting time should be adjusted-t* (Ii-I)/Ii, that is, reduce t* (Ii-I)/Ii, low level is lasting
Time increases t* (Ii-I)/Ii；Work as Ii<During I, should by the branch road drive signal high level lasting time adjust-t* (Ii-I)/
Ii, that is, increase t* (I-Ii)/Ii, and low duration reduces t* (Ii-I)/Ii.
(3) fault detection unit
Excessively stream is carried out per the corresponding fault detection unit of road MOSFET parallel branches according to the road current signal for receiving to sentence
It is disconnected, final output is determined according to excessively stream judged result, the under-voltage signal of driving for receiving and drive signal integrity detection signal
Drive signal；Driver element comprising MOSFET is operated according to the final drive signal for receiving.
Excessively stream in this example judges to be accomplished in the following manner：Each parallel branch carries out electricity by current sensor
After stream sampling, the voltage corresponding with electric current is exported, (threshold value is selected to the voltage threshold that magnitude of voltage sets with comparator
90% corresponding voltage of the rated current of MOSFET) it is compared, output overcurrent comparison signal, if more than the threshold value of setting
Excessively stream comparison signal is low level, otherwise is high level.
Excessively stream judges the 90% of the rated current that the threshold current for using is selected MOSFET.
Above-mentioned drive signal integrity detection signal is the isolation drive signal or generation sent according to main control unit
Consistent drive signal carries out the signal of generation after uniformity judgement with the drive signal of the final output for being currently able to collect,
Drive signal integrity detection signal is initially high level, specially：
By main control unit send isolation drive signal or generation consistent drive signal be currently able to collect
The drive signal of final output carry out XOR treatment, when two different times of signal exceed threshold time, be output as height
Level, then export low level through not gate；Otherwise, high level is exported through not gate；The signal exported by not gate is drive signal
Integrity detection signal.
Above-mentioned threshold time is isolation drive signal or the consistent drive signal cycle of generation of main control unit output
4-6%, fairly simple implementation, threshold time by being processed in XOR after increase RC filter circuits be adjusted.
As shown in figure 4, the minimum high level selection that the charge characteristic according to RC circuits can recognize that with logic non-device is crucial
Property control allow signal different time R, C value.
Assuming that the drive signal cycle is 100us, the drive signal integrality judgment threshold time takes 4us
The time constant of RC circuits is τ=RC, it is assumed that the recognizable minimum high level of logic non-device is 2V, by RC circuits
Charge characteristic, when t be equal to 0.9 τ when, RC circuit outputs 2V.That is 0.9 τ=4us
Can be calculated
τ=RC=4.44us
R, C value are chosen according to the formula, such as：R=2K Ω, C=2.2nF.
As shown in figure 3, excessively stream comparison signal, under-voltage signal, drive signal integrity detection signal are driven, while input one
Individual logical AND gate, output signal is total failare output signal.Total failare output signal delivers to signal output unit Enable Pin to control
The enable output of the drive signal of adjustment unit output processed.Excessively stream comparison signal, drive under-voltage signal, the inspection of drive signal integrality
It is low level to survey any one fault-signal in signal, and total failare output signal is low level, and signal output unit is forbidden
Output, so as to realize the isolation of corresponding parallel branch.
In this example, signal output unit includes an electric pressure converter, the drive signal (+3.3V) that can be sent DSP
Drive signal (+5V) needed for being converted to driving chip is simultaneously exported, and the chip has an Enable Pin, is enabled and is terminated each parallel branch
Total failare output resultant signal.When Enable Pin input is for high level, the drive signal that DSP sends after conversion by exporting；Enable
When end input is for low level, signal-inhibiting output.
Unspecified part of the present invention belongs to general knowledge as well known to those skilled in the art.
Claims (8)
1. a kind of MOSFET parallel current-equalizing circuits based on fault diagnosis, it is characterised in that：Including main control unit and at least two-way
MOSFET parallel branches, are attached between main control unit and every road MOSFET parallel branches by fault detection unit；
Include fault collection unit and the driver element comprising MOSFET per road MOSFET parallel branches；It is in parallel per road MOSFET
The electric current that temperature and MOSFET when fault collection unit collection MOSFET in branch road works pass through when opening, by what is gathered
The under-voltage signal of driving of above-mentioned signal and driver element is sent to main control unit；The above-mentioned institute in addition to temperature signal that will be gathered
The under-voltage signal of driving for having signal and driver element is sent to fault detection unit；
Drive signal integrity detection signal and the MOSFET branch in parallel that main control unit collection sends per road fault detection unit
The signal that road sends, and judge whether normal per road MOSFET parallel branches working condition according to the signal of collection；According to judgement
As a result, the fault detection unit of isolation drive signal to the abnormal branch road of correspondence is sent, it is in parallel to all normal MOSFET respectively
Branch road produces consistent drive signal, with reference to the current signal of the normal MOSFET parallel branches of collection, respectively to normal
The drive signal level width of MOSFET parallel branches is adjusted compensation, obtains the regulation of the normal MOSFET parallel branches in every road
Drive signal is simultaneously sent to corresponding fault detection unit；
Excessively stream judgement, root are carried out according to the road current signal for receiving per road MOSFET parallel branches corresponding fault detection unit
The driving of final output is determined according to excessively stream judged result, the under-voltage signal of driving for receiving and drive signal integrity detection signal
Signal；Described drive signal integrity detection signal is the one of the isolation drive signal or generation sent according to main control unit
The drive signal of cause carries out the signal of generation after uniformity judgement with the drive signal of the final output for being currently able to collect, and drives
The initial value of dynamic signal integrity detection signal is high level；
Driver element comprising MOSFET is operated according to the final drive signal for receiving.
2. circuit according to claim 1, it is characterised in that：Described main control unit is to normal MOSFET parallel branches
The step of drive signal level width is adjusted compensation is as follows：
Assuming that currently having m MOSFET parallel branch normal work, m parallel branch electric current is respectively Ii (i=1~m), electric current
Arithmetic mean of instantaneous value is I, then Ii-I is the difference of each parallel branch electric current and current average, therefore, take-t* (Ii-I)/Ii
It it is the time to the adjustment of each parallel branch drive signal high level, t is the cycle of drive signal；As Ii ＞ I, this should be propped up
Road drive signal high level lasting time adjusts-t* (Ii-I)/Ii, that is, reduce t* (Ii-I)/Ii, low duration increase
t*(Ii-I)/Ii；Work as Ii<During I, the branch road drive signal high level lasting time should be adjusted-t* (Ii-I)/Ii, that is, increased
T* (I-Ii)/Ii, low duration reduces t* (Ii-I)/Ii.
3. circuit according to claim 1, it is characterised in that：The determination step of described drive signal integrity detection signal
It is rapid as follows：
By main control unit send isolation drive signal or generation consistent drive signal be currently able to collect most
The drive signal of output carries out XOR treatment eventually, when two different times of signal exceed threshold time, is output as high level,
Again low level is exported through not gate；Otherwise, high level is exported through not gate；The signal exported by not gate is drive signal integrality
Detection signal.
4. circuit according to claim 3, it is characterised in that：Described threshold time is that the isolation of main control unit output is driven
The 4-6% in the consistent drive signal cycle of dynamic signal or generation.
5. circuit according to claim 4, it is characterised in that：Threshold time by being processed in XOR after increase RC filtering
Circuit is adjusted.
6. circuit according to claim 1, it is characterised in that：Fault detection unit is realized by the way of hardware.
7. circuit according to claim 1, it is characterised in that：Main control unit is judged per road MOSFET according to the signal of collection
Whether normal parallel branch working condition implementation be as follows：
(1) whether the drive signal integrity detection signal for judging certain branch road for collecting is high level, if high level, is then held
Row step (2), otherwise, assert that the branch road is abnormal；
(2) whether the under-voltage signal of driving for judging certain branch road for collecting is high level, if high level, then performs step (3),
Otherwise, assert that the branch road is abnormal；
(3) judge there are a few road MOSFET parallel branches, when 2 road MOSFET parallel branches are only existed, main control unit is directly recognized
Determine two-way working condition normal；When more than two-way, go to step (3)；
(4) the electric current baseline that compares is determined, described electric current baseline is that the current signal removal of all branch roads of collection is maximum, most
Average after small two values, goes to step (4)；
(5) current signal of all branch roads for gathering make the difference comparing with the baseline for determining, when difference is more than selected
The 20% of the rated current of MOSFET, assert that the branch road is abnormal, otherwise goes to step (5)；
(6) temperature baselines that compare are determined, described electric current baseline is that the temperature signal removal of all branch roads of collection is maximum, most
Average after small two values, goes to step (6)；
(7) temperature signal of all branch roads for gathering make the difference comparing with the temperature baselines for determining, when difference is more than A,
Assert that the branch road is abnormal, otherwise normally；The scope of A is 20 degree~50 degree.
8. circuit according to claim 1, it is characterised in that：The excessively stream of described fault detection unit judges the threshold for using
Value electric current is the 90% of the rated current of selected MOSFET.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108616266A (en) * | 2018-05-08 | 2018-10-02 | 深圳市飞碟动力科技有限公司 | A kind of metal-oxide-semiconductor parallel current-equalizing circuit |
| CN111239635A (en) * | 2018-11-29 | 2020-06-05 | 丰田自动车株式会社 | Power Systems |
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| CN111391609A (en) * | 2020-03-25 | 2020-07-10 | 广州华凌制冷设备有限公司 | Fault detection method and device for voltage doubling circuit, air conditioner and readable storage medium |
| CN112260523A (en) * | 2020-09-17 | 2021-01-22 | 深圳市禾望电气股份有限公司 | Parallel current sharing system and method of SiC power device and power electronic equipment |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4139885A (en) * | 1977-06-20 | 1979-02-13 | Borg-Warner Corporation | Fault protection circuit |
| CN102163926A (en) * | 2010-12-31 | 2011-08-24 | 中电普瑞科技有限公司 | High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules |
| CN105406719A (en) * | 2015-12-02 | 2016-03-16 | 中国电子科技集团公司第四十一研究所 | Device applied to paralleled current sharing of programmable DC power module and paralleled current sharing method thereof |
| CN106059296A (en) * | 2016-06-08 | 2016-10-26 | 中车青岛四方车辆研究所有限公司 | Railway vehicle-oriented parallelizable double-voltage power supply module with multi-protection |
-
2017
- 2017-03-27 CN CN201710189320.XA patent/CN106849828B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4139885A (en) * | 1977-06-20 | 1979-02-13 | Borg-Warner Corporation | Fault protection circuit |
| CN102163926A (en) * | 2010-12-31 | 2011-08-24 | 中电普瑞科技有限公司 | High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules |
| CN105406719A (en) * | 2015-12-02 | 2016-03-16 | 中国电子科技集团公司第四十一研究所 | Device applied to paralleled current sharing of programmable DC power module and paralleled current sharing method thereof |
| CN106059296A (en) * | 2016-06-08 | 2016-10-26 | 中车青岛四方车辆研究所有限公司 | Railway vehicle-oriented parallelizable double-voltage power supply module with multi-protection |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108616266A (en) * | 2018-05-08 | 2018-10-02 | 深圳市飞碟动力科技有限公司 | A kind of metal-oxide-semiconductor parallel current-equalizing circuit |
| CN111239635A (en) * | 2018-11-29 | 2020-06-05 | 丰田自动车株式会社 | Power Systems |
| CN111239635B (en) * | 2018-11-29 | 2022-06-03 | 丰田自动车株式会社 | Power supply system |
| US11404897B2 (en) | 2018-11-29 | 2022-08-02 | Toyota Jidosha Kabushiki Kaisha | Power supply system |
| CN111391612A (en) * | 2020-03-25 | 2020-07-10 | 广州华凌制冷设备有限公司 | Voltage doubling circuit, fault detection method, air conditioner and readable storage medium |
| CN111391609A (en) * | 2020-03-25 | 2020-07-10 | 广州华凌制冷设备有限公司 | Fault detection method and device for voltage doubling circuit, air conditioner and readable storage medium |
| CN112260523A (en) * | 2020-09-17 | 2021-01-22 | 深圳市禾望电气股份有限公司 | Parallel current sharing system and method of SiC power device and power electronic equipment |
| CN112260523B (en) * | 2020-09-17 | 2021-08-17 | 深圳市禾望电气股份有限公司 | Parallel current sharing system and method of SiC power device and power electronic equipment |
| CN113063999A (en) * | 2021-03-11 | 2021-07-02 | 北京北方华创微电子装备有限公司 | Method and system for diagnosing heater in semiconductor process equipment |
| CN114531017A (en) * | 2022-02-21 | 2022-05-24 | 上海三菱电梯有限公司 | IGBT parallel drive detection circuit and control method thereof |
| CN116865203A (en) * | 2023-06-01 | 2023-10-10 | 湖南恩智测控技术有限公司 | Electronic load overcurrent protection method, electronic load and computer readable storage medium |
| CN116865203B (en) * | 2023-06-01 | 2024-05-07 | 湖南恩智测控技术有限公司 | Electronic load overcurrent protection method, electronic load and computer readable storage medium |
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