CN106841791B - Silicon-based slot-coupled direct millimeter-wave phase detector with unknown frequency - Google Patents
Silicon-based slot-coupled direct millimeter-wave phase detector with unknown frequency Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000002955 isolation Methods 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 230000005611 electricity Effects 0.000 claims abstract description 4
- 238000001514 detection method Methods 0.000 claims description 19
- 244000144983 clutch Species 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000004873 anchoring Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 abstract description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
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- 230000005672 electromagnetic field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
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- 230000011664 signaling Effects 0.000 description 2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
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Abstract
Silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention are made of co-planar waveguide, slot-coupled structure, phase shifter, single-pole double-throw switch (SPDT), Wilkinson power splitter, Wilkinson function clutch and direct-type thermoelectric (al) type power sensor, total is made based on high resistant Si substrate, there are four slot-coupled structures for setting altogether, two slot-coupled structures of top realize the frequency measurement of signal, two slot-coupled structures of lower section realize the phase measurement of signal, and one section of phase shifter is provided between the gap of front and back；Wilkinson power splitter and Wilkinson function clutch are made of co-planar waveguide, asymmetrical coplanar stripline and an isolation resistance；Direct-type thermoelectric (al) type power sensor is mainly made of co-planar waveguide, two thermocouples and a capacitance, and thermocouple is composed in series by metal arm and semiconductor arm, it is able to carry out self-heating and completes heat to electricity conversion.These structures simply and efficiently realize the phase measurement of millimeter wave under unknown frequency, substantially increase the efficiency of signal detector.
Description
Technical field
The invention proposes silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors, belong to microelectronics machine
The technical field of tool system (MEMS).
Background technique
With the sustainable development of electronic information electronic science and technology, people have had come to the very diversification of an information
Epoch are all flooded with various information communication devices around people, say after all, almost all of communication information is set
The standby detection and processing all be unableing to do without to signal, thus the detection of signal be also always people increasingly constantly study it is important in
Hold.Currently, most of signals of people's research are concentrated mainly on low frequency and certain high frequency bands, the signal of extremely high frequency is studied
Less, millimeter-wave signal is a kind of extremely high frequency signal positioned at microwave and far infrared wave overlapping region, with to the resource of frequency range
It continually develops, the signal detection technique of millimeter wave has also been put on epoch wonderful stage.It is well known that three big parameters of a signal
For frequency, phase and power, wherein the phase-detection of millimeter-wave signal is very important a part of content, however current phase
Usually structure is complicated for bit detector, is not easy to integrate, and frequency is also unable to reach extremely high frequency, the phase-detection of usual millimeter wave
It is divided into the detection under given frequency and under unknown frequency, in practical situations, the frequency of a unknown signaling is also that can not know
, therefore the phase detectors under unknown frequency must first measure its frequency, determine the frequency of reference signal, finally measure phase again
Position.
In co-planar waveguide slot-coupled structure, Wilkinson power splitter, Wilkinson function clutch and direct-type thermoelectricity
On the Research foundation of formula power sensor, the present invention devises a kind of millimeter wave under unknown frequency on high resistant Si substrate and exists
Phase of line detector, present invention utilizes co-planar waveguide slot-coupled structures to be integrated in one for the frequency of millimeter wave and phase-detection
It rises, potential value with higher.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phases
Detector, present invention employs simple and novel co-planar waveguide slot-coupled structures, in terms of power distribution and power combing then
Using common Wilkinson power splitter and Wilkinson function clutch structure, then used in terms of the measurement of composite signal
Direct-type thermoelectric (al) type power sensor.
Technical solution: silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention are by coplanar
Waveguide, No.1 slot-coupled structure, No. two slot-coupled structures, No. three slot-coupled structures, No. four slot-coupled structures, phase shifts
Device, No.1 single-pole double-throw switch (SPDT), No. two single-pole double-throw switch (SPDT)s, a Wilkinson power splitter, three Wilkinson function clutchs
And five direct-type thermoelectric (al) type power sensors are constituted, the connection relationship of specific structure is as follows: first port is that signal is defeated
Enter end, No.1 slot-coupled structure and No. two slot-coupled structures are located at ground wire on the upside of co-planar waveguide, No. three slot-coupled structures
Then it is located at ground wire on the downside of co-planar waveguide with No. four slot-coupled structures, these two pair gap is symmetrical about center signal line, they it
Between separated by a phase shifter, look first at frequency detection module, No.1 slot-coupled structure is connected to second port, second end
Mouth is connected with the input terminal of No.1 single-pole double-throw switch (SPDT), and the output end of No.1 single-pole double-throw switch (SPDT) is connected respectively to No.1
Wilkinson function clutch and No.1 direct-type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structures are connected to third
Port, third port are connected with the input terminal of No. two single-pole double-throw switch (SPDT)s, and the output end of No. two single-pole double-throw switch (SPDT)s is separately connected
To No.1 Wilkinson function clutch and No. two direct-type thermoelectric (al) type power sensors, and the output of No.1 Wilkinson function clutch
End is connected to No. three direct-type thermoelectric (al) type power sensors；Phase detecting module, No. three slot-coupled structures and the 4th end are seen again
Mouth is connected, and the 4th port is connected to No. two Wilkinson function clutchs, and No. four slot-coupled structures are connected with fifth port, and the 5th
Port is connected to No. three Wilkinson function clutchs, and reference signal is inputted by the input terminal of No. four Wilkinson power splitters, and four
The output end of number Wilkinson power splitter is connected respectively to No. two Wilkinson function clutchs and No. three Wilkinson function clutchs,
Then, the output end of No. two Wilkinson function clutchs connects No. four direct-type thermoelectric (al) type power sensors, No. three Wilkinson
The output end of function clutch connects No. five direct-type thermoelectric (al) type power sensors, is connected to subsequent process circuit at the 6th port.
Firstly, for the frequency detection module of millimeter wave, it mainly by two slot-coupled structures, one section of phase shifter,
Two single-pole double-throw switch (SPDT)s, a Wilkinson function clutch and a direct-type function thermoelectric (al) type rate sensor are constituted, millimeter
Wave signal first passes around the signal P that first slot-coupled structure Coupling goes out fraction1, then after one section of phase shifter again
Go out the signal P of part by another slot-coupled structure Coupling2, certain phase is just produced between two such coupled signal
DifferenceActually this section of phase shifter is exactly one section of coplanar waveguide transmission line, its length is set as with centre frequency f0For 35GHz
Locate the 1/4 of wavelength, at this time phase differenceIt is exactly 90 °, but when frequency f variation, phase differenceIt is the function of frequency f:
Wherein f is the frequency of millimeter-wave signal, and c is the light velocity, εerFor the relative dielectric constant of transmission line, Δ L is phase shifter
Length, as long as therefore measuringValue, the size of frequency f can be obtained.Then by two coupled signal P1、P2By
Wilkinson function clutch is synthesized, then goes detection composite signal power P with direct-type thermoelectric (al) type power sensorsSize,
The power P of composite signalsIt is about phase differenceTrigonometric function relationship:
Due to coupled signal P1、P2Size it is unknown, therefore two single-pole double-throw switch (SPDT)s are employed herein and are coupled out two
The small signaling rate come first carries out power detection, obtains its watt level, then carries out power conjunction by Wilkinson function clutch again
At can then calculate the size of frequency f by formula (2).Pay attention to phase difference hereOnly between two small signals of coupling
Phase difference, be not the phase Φ of former millimeter-wave signal, it is also necessary to which former millimeter wave is determined come accurate by phase detecting module
The phase Φ of signal.
Secondly, similarly and by two slot-coupled structure Couplings going out part for the phase detecting module of millimeter wave
Small signal P3And P4, since gap size is identical, so the small signal P of coupling that their watt level measures before being equal to1With
P2, their initial phase is all Φ, and only wherein second slot-coupled signal has propagated phase moreReference signal PcBy
Wilkinson power splitter resolves into the signal of left and right two-way striking resemblances, the left side signal and first slot-coupled signal all the way
Power combing is carried out, synthesis power P is obtainedL, it is the trigonometric function relationship about phase Φ；And the right signal and second all the way
A slot-coupled signal carries out power combing, obtains synthesis power PR, it is about phaseTrigonometric function relationship；
Wherein P3=P1、P4=P2, in conjunction with the two relational expressions, not only the size of available phase Φ, can also be obtained
The advanced or lagged relationship of phase.
The utility model has the advantages that in the present invention, taking simple and novel slot-coupled structure, this slot-coupled structure can
The energy of electromagnetic field propagated in co-planar waveguide is coupled out fraction, detects former millimeter wave using the small signal that this is coupled out
The frequency and phase size of signal, simultaneously because the signal energy being coupled out is very small, therefore almost to former millimeter-wave signal shadow
It rings less, former millimeter-wave signal can continue back-propagation, the very effective phase for realizing millimeter-wave signal under unknown frequency
Position detection, substantially increases the efficiency of signal detector, potential using value with higher.
Detailed description of the invention
Fig. 1 is the top view of silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
Fig. 2 is that single-pole double throw is opened in silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The top view of pass
Fig. 3 is that single-pole double throw is opened in silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
Close the sectional view in the direction AA '
Fig. 4 is Wilkinson in silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The top view of power splitter and Wilkinson function clutch
Fig. 5 is direct-type thermoelectricity in silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The top view of formula power sensor
Fig. 6 is direct-type thermoelectricity in silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The sectional view in the direction formula power sensor AA '
Fig. 7 is direct-type thermoelectricity in silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The sectional view in the direction formula power sensor BB '
It include: co-planar waveguide 1, slot-coupled structure 2-1, slot-coupled structure 2-2, slot-coupled structure 2-3, seam in figure
Gap coupled structure 2-4, phase shifter 3, frequency detection module 4, phase detecting module 5, isolation resistance 6, asymmetrical coplanar stripline 7,
Air bridges 8, metal arm 9, P-type semiconductor arm 10, Ohmic contact 11, hot end 12, cold end 13, capacitance 14, output electrode 15,
Capacitance bottom crown 16, Si3N4Dielectric layer 17, capacitance top crown 18, substrate membrane structure 19, high resistant Si substrate 20, SiO2
Layer 21, No.1 single-pole double-throw switch (SPDT) 22, No. two single-pole double-throw switch (SPDT)s 23, switch beam 24, anchoring area 25 switch pull-down electrode plate 26,
First port 1-1, second port 1-2, third port 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6.
Specific embodiment
Silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention are based on high resistant Si substrate
20 production, be by co-planar waveguide 1, No.1 slot-coupled structure 2-1, No. two slot-coupled structure 2-2, No. three slot-coupled knots
Structure 2-3, No. four slot-coupled structure 2-4, phase shifter 3, the single-pole double-throw switch (SPDT) 23, one of No.1 single-pole double-throw switch (SPDT) 22, two
Wilkinson power splitter, three Wilkinson function clutchs and five direct-type thermoelectric (al) type power sensors are constituted.
Single-pole double-throw switch (SPDT) 22 is by co-planar waveguide 1, anchoring area 25, Si3N4Dielectric layer 17 switchs pull-down electrode plate 26 and opens
Closing what beam 24 formed, co-planar waveguide 1 is connected in anchoring area 25, and anchoring area 25 is connected with the switch beam 24 in two different branch,
Wherein a branch connects direct-type thermoelectric (al) type power sensor, and another branch connects the input terminal of Wilkinson function clutch,
There is one layer of the air gaps for 24 lower section of switch beam, and switch pull-down electrode plate 26 is mounted in this air gap, and are opening
It closes and is also covered with one layer of Si on pull-down electrode plate 263N4Dielectric layer 17.
The structure of Wilkinson power splitter and Wilkinson function clutch be it is identical, mainly by co-planar waveguide 1, asymmetric
Coplanar striplines 7 and isolation resistance 6 are constituted, and the identical asymmetrical coplanar stripline 7 of two of them length can will be on co-planar waveguide 1
Millimeter-wave signal is divided into equal two parts, and isolation resistance 6 is located at the end of two asymmetrical coplanar striplines 7.
Heat to electricity conversion is realized using direct-type thermoelectric (al) type power sensor, it is mainly by co-planar waveguide 1, metal arm 9, P
Type semiconductor arm 10 and a capacitance 14 are constituted, two thermocouples that wherein metal arm 9 and P-type semiconductor arm 10 are constituted
It is connected in parallel, and co-planar waveguide 1 is directly connected with one end of the two thermocouples.
The connection relationship of specific structure is as follows: first port 1-1 is signal input part, No.1 slot-coupled structure 2-1 and
No. two slot-coupled structure 2-2 are located at 1 upside ground wire of co-planar waveguide, No. three slot-coupled structure 2-3 and No. four slot-coupled knots
Structure 2-4 is then located at 1 downside ground wire of co-planar waveguide, and these two pair gap is symmetrical about center signal line, by a phase shift between them
Device 3 separates, and looks first at frequency detection module 4, and No.1 slot-coupled structure 2-1 is connected to second port 1-2, second port 1-
2 are connected with the input terminal of No.1 single-pole double-throw switch (SPDT) 22, and the output end of No.1 single-pole double-throw switch (SPDT) 22 is connected respectively to No.1
Wilkinson function clutch and No.1 direct-type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structure 2-2 are connected to
Third port 1-3, third port 1-3 are connected with the input terminal of No. two single-pole double-throw switch (SPDT)s 23, No. two single-pole double-throw switch (SPDT)s 23
Output end is connected respectively to No.1 Wilkinson function clutch and No. two direct-type thermoelectric (al) type power sensors, and No.1
The output end of Wilkinson function clutch is connected to No. three direct-type thermoelectric (al) type power sensors；See phase detecting module 5 again, three
Number slot-coupled structure 2-3 is connected with the 4th port 1-4, and the 4th port 1-4 is connected to No. two Wilkinson function clutchs, and No. four
Slot-coupled structure 2-4 is connected with fifth port 1-5, and fifth port 1-5 is connected to No. three Wilkinson function clutchs, with reference to letter
Number by the input terminal inputs of No. four Wilkinson power splitters, the output end of No. four Wilkinson power splitters is connected respectively to two
Number Wilkinson function clutch and No. three Wilkinson function clutchs, then, the output end connection four of No. two Wilkinson function clutchs
The output end of number direct-type thermoelectric (al) type power sensor, No. three Wilkinson function clutchs connects No. five direct-type thermoelectric (al) type power
Sensor is connected to subsequent process circuit at the 6th port 1-6.
Silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention the preparation method comprises the following steps:
1) prepare high resistant Si substrate 20 (4000 Ω cm), with a thickness of 400um；
2) one layer of SiO of thermal oxide growth2Layer 21, with a thickness of 1.2um；
3) one layer of polysilicon is deposited, P-type ion injects (doping concentration 1015cm-2), to reach production Wilkinson function
Divide the resistivity requirement of the isolation resistance 6 and thermo-electric metal arm 9 of device.
4) P-type ion injection is carried out again using place of the mask to thermocouple P-type semiconductor arm 10 to be made, reach
The resistivity requirement of P-type semiconductor arm 10；
5) photoresist is coated, photoetching is carried out to polysilicon layer, ultimately forms the metal arm 9 and P of isolation resistance 6, thermocouple
Type semiconductor arm 10；
6) Ohmic contact 11 is made in the metal arm of thermocouple 9 and 10 junction of P-type semiconductor arm；
7) photoresist, removal transmission line, capacitance 14, output electrode 15 and switch pull-down electrode plate are coated on substrate
Photoresist at 26 evaporates one layer of seed layer Ti, with a thickness ofThen first layer gold is prepared, with a thickness of 0.3um, passes through stripping
Photoresist that separating process removal retains, the metal layer in related removal face on a photoresist preliminarily form transmission line, capacitance
Bottom crown 16, output electrode 15 and switch pull-down electrode plate 26；
8) on the Si substrate that step process obtains in front, one layer is generated by PECVDThick Si3N4Dielectric layer,
Photoetching Si3N4Dielectric layer only retains the Si that make at capacitance 14, air bridges 8 and switch beam 243N4Dielectric layer 17；
9) polyimide sacrificial layer of one layer of 1.6 μ m-thick is deposited, it is desirable that fill up all pits；Photoetching polyimides sacrifice
Layer only retains the polyimide sacrificial layer of 24 lower section of air bridges 8 and switch beam；
10) photoresist is coated, preparation production transmission line, capacitance 14, output electrode 15, air bridges 8 and switch are removed
The photoresist of Liang24Chu evaporates one layer of seed layer Ti, with a thickness ofSecond layer gold is prepared, with a thickness of 2um, finally, removal is protected
The photoresist stayed forms transmission line, the top crown 18 of capacitance, output electrode 15, air bridges 8 and switch beam 24；
11) in the backside coating photoresist of substrate, removal preparation forms the photoetching in 19 place of membrane structure in substrate back
Glue etches below thermocouple intermediate region, that is, hot end 12 and Si substrate is thinned, and forms substrate membrane structure 19, and retaining is about 40 μ m-thicks
Membrane structure；
12) polyimide sacrificial layer is discharged, to remove the polyimide sacrificial layer of 24 lower section of air bridges 8 and switch beam；Most
Afterwards, it impregnates 5 minutes in deionized water, dehydrated alcohol dehydration, volatilizees, dry under room temperature.
Present invention be distinguished in that:
Present invention employs novel slot-coupled structure, this slot-coupled structure can will be propagated in co-planar waveguide
Energy of electromagnetic field be coupled out a part, to detect the frequency of former millimeter-wave signal using the small signal in part that this is coupled out
With phase size, thus the millimeter wave phase-detection under realizing unknown frequency；Power divider and power combiner all use
The structure of Wilkinson power splitter and Wilkinson function clutch realizes dividing equally or synthesizing for power；As for composite signal
Detection, then realize heat to electricity conversion using direct-type thermoelectric (al) type power sensor.These structures not only simplify circuit layout, drop
Low cost of manufacture, and the detection efficiency of millimeter-wave signal is substantially increased, simultaneously because the signal energy and original that are coupled out
Signal influences less former millimeter-wave signal compared to very small, therefore almost, former millimeter-wave signal can continue back-propagation into
The subsequent processing of circuit of row.
The structure for meeting conditions above is considered as silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase of the invention
Bit detector.
Claims (4)
1. a kind of silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors, which is characterized in that the phase-detection
Device is produced on high resistant Si substrate (20), is by co-planar waveguide (1), No.1 slot-coupled structure (2-1), No. two slot-coupled knots
Structure (2-2), No. three slot-coupled structures (2-3), No. four slot-coupled structures (2-4), phase shifter (3), No.1 single-pole double throw are opened
It is straight to close (22), No. two single-pole double-throw switch (SPDT)s (23), a Wilkinson power splitter, three Wilkinson function clutchs and five
Connect formula thermoelectric (al) type power sensor to be constituted, the connection relationship of specific structure is as follows: first port (1-1) is signal input part,
No.1 slot-coupled structure (2-1) and No. two slot-coupled structures (2-2) are located at ground wire on the upside of co-planar waveguide (1), No. three gaps
Coupled structure (2-3) and No. four slot-coupled structures (2-4) are then located at ground wire on the downside of co-planar waveguide (1), these two pair gap about
Center signal line is symmetrical, is separated between these two pair gap by a phase shifter (3), looks first at frequency detection module (4), No.1
Slot-coupled structure (2-1) is connected to second port (1-2), and second port (1-2) is defeated with No.1 single-pole double-throw switch (SPDT) (22)
Enter end to be connected, the output end of No.1 single-pole double-throw switch (SPDT) (22) is connected respectively to No.1 Wilkinson function clutch and No.1 is direct
Formula thermoelectric (al) type power sensor, likewise, No. two slot-coupled structures (2-2) are connected to third port (1-3), third port
(1-3) is connected with the input terminal of No. two single-pole double-throw switch (SPDT)s (23), and the output end of No. two single-pole double-throw switch (SPDT)s (23) is separately connected
To No.1 Wilkinson function clutch and No. two direct-type thermoelectric (al) type power sensors, and the output of No.1 Wilkinson function clutch
End is connected to No. three direct-type thermoelectric (al) type power sensors；It sees again phase detecting module (5), No. three slot-coupled structures (2-3)
It is connected with the 4th port (1-4), the 4th port (1-4) is connected to No. two Wilkinson function clutchs, No. four slot-coupled structures
(2-4) is connected with fifth port (1-5), and fifth port (1-5) is connected to No. three Wilkinson function clutchs, and reference signal passes through
The input terminal input of No. four Wilkinson power splitters, the output end of No. four Wilkinson power splitters are connected respectively to No. two
Wilkinson function clutch and No. three Wilkinson function clutchs, then, the output end of No. two Wilkinson function clutchs connect No. four
Direct-type thermoelectric (al) type power sensor, the output end of No. three Wilkinson function clutchs connect No. five direct-type thermoelectric (al) type power and pass
Sensor is connected to subsequent process circuit at the 6th port (1-6).
2. silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors as described in claim 1, feature exist
In No.1 single-pole double-throw switch (SPDT) (22) and No. two single-pole double-throw switch (SPDT)s (23) are by co-planar waveguide (1), anchoring area (25), Si3N4It is situated between
What matter layer (17), switch pull-down electrode plate (26) and switch beam (24) formed, co-planar waveguide (1) is connected on anchoring area (25), anchor
Area (25) is connected with the switch beam (24) in two different branch, wherein a branch connects direct-type thermoelectric (al) type power sensing
Device, the input terminal of another branch connection Wilkinson function clutch, there is one layer of the air gap below switch beam (24),
It is mounted with switch pull-down electrode plate (26) in this air gap, and is also covered with one layer on switch pull-down electrode plate (26)
Si3N4Dielectric layer (17).
3. silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors as described in claim 1, feature exist
Be in, the structure of Wilkinson power splitter and Wilkinson function clutch it is identical, mainly by co-planar waveguide (1), asymmetric total
Face band line (7) and isolation resistance (6) are constituted, and isolation resistance (6) is located at the end of two asymmetrical coplanar striplines (7).
4. silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors as described in claim 1, feature exist
In realizing heat to electricity conversion using direct-type thermoelectric (al) type power sensor, it is mainly by co-planar waveguide (1), metal arm (9), p-type
Semiconductor arm (10) and capacitance (14) are constituted, wherein two of metal arm (9) and P-type semiconductor arm (10) composition
Thermocouple is connected in parallel, and co-planar waveguide (1) is directly connected with one end of the two thermocouples.
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