CN106835065A - A kind of Nano diamond silane surface vacuum pyrolysis depositing device - Google Patents
A kind of Nano diamond silane surface vacuum pyrolysis depositing device Download PDFInfo
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- 239000002113 nanodiamond Substances 0.000 title claims abstract description 55
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910000077 silane Inorganic materials 0.000 title claims abstract description 47
- 238000007158 vacuum pyrolysis Methods 0.000 title claims abstract description 13
- 238000000151 deposition Methods 0.000 title abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 37
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000010453 quartz Substances 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052786 argon Inorganic materials 0.000 claims abstract description 17
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000011248 coating agent Substances 0.000 abstract description 11
- 238000000576 coating method Methods 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 9
- 125000000524 functional group Chemical group 0.000 abstract description 6
- 239000000843 powder Substances 0.000 abstract description 6
- 238000001179 sorption measurement Methods 0.000 abstract description 6
- 238000000197 pyrolysis Methods 0.000 abstract description 5
- 239000002156 adsorbate Substances 0.000 abstract description 4
- 238000011065 in-situ storage Methods 0.000 abstract description 4
- 238000007747 plating Methods 0.000 abstract description 4
- 238000000746 purification Methods 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 239000003708 ampul Substances 0.000 abstract 1
- 238000005253 cladding Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005474 detonation Methods 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 238000005273 aeration Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
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Abstract
Description
技术领域technical field
本申请涉及PDC刀具材料制造领域,特别涉及一种纳米金刚石表面硅烷真空热解沉积设备。The application relates to the field of PDC tool material manufacturing, in particular to a vacuum pyrolysis deposition device for silane on the surface of nano-diamond.
背景技术Background technique
目前国内外所使用的纳米金刚石多是由爆轰法制备。纳米金刚石不仅具有金刚石的一般特性,同时还有纳米材料的小尺寸效应及极大的比表面,特别是爆轰法合成的纳米金刚石含有较多的位错和晶格畸变,因此爆轰法制得的纳米金刚石具有很高的表面活性,其表面吸附有大量含氧官能团,主要有羟基、羧基、羰基、醚基、酯基,以及一些含氮的基团。所以纳米金刚石表面的净化问题以及净化后的保存问题成为了纳米金刚石下游应用需要解决的关键技术问题。At present, most of the nano-diamonds used at home and abroad are prepared by the detonation method. Nano-diamond not only has the general characteristics of diamond, but also has the small size effect of nano-materials and a large specific surface, especially the nano-diamond synthesized by the detonation method contains more dislocations and lattice distortions, so the detonation method is produced The nano-diamond has a high surface activity, and a large number of oxygen-containing functional groups are adsorbed on its surface, mainly including hydroxyl, carboxyl, carbonyl, ether, ester, and some nitrogen-containing groups. Therefore, the purification of the surface of nano-diamonds and the storage after purification have become the key technical issues to be solved in the downstream application of nano-diamonds.
为解决上述问题,首先在高真空状态下净化处理纳米金刚石,使其表面吸附的大量含氧、含氮、含Cl官能团解吸。冷却至室温后向反应室中导入硅烷气体,在负压下充分渗入堆积的纳米金刚石粉体之间。部分前驱体分子与纳米金刚石表面悬键反应形成单分子或多分子饱和吸附层,多余的气体分子均匀地弥散于纳米金刚石周围。然后通入惰性保护气体使得吸附物能在一定温度条件下原位热解沉积。由于上述吸附-热解反应是受表面吸附层通入的气体总量控制的自限制反应,因而可促使硅镀层沿着表面二维生长,形成准原子级镀层。In order to solve the above problems, firstly, the nano-diamond is purified under a high vacuum state to desorb a large amount of oxygen-containing, nitrogen-containing, and Cl-containing functional groups adsorbed on the surface. After cooling to room temperature, introduce silane gas into the reaction chamber, and fully infiltrate between the stacked nano-diamond powder under negative pressure. Part of the precursor molecules react with the dangling bonds on the surface of the nano-diamond to form a monomolecular or multi-molecular saturated adsorption layer, and the excess gas molecules are uniformly dispersed around the nano-diamond. Then an inert protective gas is introduced to allow the adsorbate to be pyrolytically deposited in situ at a certain temperature. Since the above-mentioned adsorption-pyrolysis reaction is a self-limiting reaction controlled by the total amount of gas introduced into the surface adsorption layer, it can promote the two-dimensional growth of the silicon coating along the surface to form a quasi-atomic coating.
由于硅烷属于易燃危险气体,要在纳米金刚石表面实现硅烷热解沉积准原子硅镀层,其设备沉积条件和安全使用条件较为苛刻,一般化学气相沉积设备无法实现。因此,需要研制一种专用的纳米金刚石真空硅烷热解沉积设备。Since silane is a flammable and dangerous gas, to realize silane pyrolytic deposition of quasi-atomic silicon coating on the surface of nano-diamond, the equipment deposition conditions and safe use conditions are relatively harsh, which cannot be achieved by general chemical vapor deposition equipment. Therefore, it is necessary to develop a dedicated nano-diamond vacuum silane pyrolysis deposition equipment.
发明内容Contents of the invention
本发明提供了一种纳米金刚石表面净化、实现准原子级硅镀层的真空热解沉积设备。具体的,作为优选,所述设备包括:机械泵、扩散泵、四通阀、真空管式炉、石英管、载物台、硅烷进气口、氩气进气口、流量计、复合真空计、放气阀;所述机械泵和所述扩散泵连接;所述的扩散泵与所述的四通阀的第一通相连;所述的复合真空计与所述的四通阀的第一通连接,所述的四通阀的第三通和所述的硅烷进气口相连,所述的四通阀的第二通和所述的氩气进气口相连,四通阀的第四通和所述的真空管式炉内的石英管的一端相连;所述的石英管另一端与外界用放气阀连接;石英管内设置有能够盛放纳米金刚石的载物台;The invention provides a vacuum pyrolysis deposition device for purifying the nano-diamond surface and realizing quasi-atomic silicon coating. Specifically, preferably, the equipment includes: a mechanical pump, a diffusion pump, a four-way valve, a vacuum tube furnace, a quartz tube, a stage, a silane gas inlet, an argon gas gas inlet, a flow meter, a composite vacuum gauge, Air release valve; the mechanical pump is connected to the diffusion pump; the diffusion pump is connected to the first pass of the four-way valve; the composite vacuum gauge is connected to the first pass of the four-way valve connected, the third port of the four-way valve is connected to the silane gas inlet, the second port of the four-way valve is connected to the argon gas inlet, and the fourth port of the four-way valve Link to one end of the quartz tube in the vacuum tube furnace; the other end of the quartz tube is connected to the outside with a vent valve; the quartz tube is provided with a stage capable of holding nano-diamonds;
其有益效果是,在负压下充分渗入堆积的纳米金刚石粉体之间,实现吸附-热解反应,该反应受表面吸附层通入的气体总量控制的自限制反应,因而可促使硅镀层沿着表面二维生长,形成准原子级镀层。Its beneficial effect is that it fully infiltrates between the stacked nano-diamond powder under negative pressure to realize the adsorption-pyrolysis reaction, which is a self-limiting reaction controlled by the total amount of gas introduced into the surface adsorption layer, thus promoting silicon coating. Two-dimensional growth along the surface forms a quasi-atomic coating.
所述机械泵与扩散泵用低真空管连接,其有益效果是先抽低真空。The mechanical pump is connected with the diffusion pump by a low vacuum tube, and the beneficial effect is that the low vacuum is drawn first.
所述复合真空计与四通阀的第一通连接处,复合真空计与四通阀第一通之间设有抽真空阀;四通阀的第二通和硅烷气瓶用高真空管用硅烷阀控制,四通阀的第二通与硅烷气瓶之间设有流量计,四通阀的第三通和氩气气瓶用DN8的真空胶管相连,之间设有氩气阀,四通阀的第四通和所述的真空管式炉内的石英试管用高真空管相连,四通阀的第四通与石英试管之间设有反应阀。其有益效果是,在高真空状态下净化处理纳米金刚石,使其表面吸附的大量含氧、含氮、含Cl官能团解吸。冷却至室温后向反应室中导入硅烷气体,在负压下充分渗入堆积的纳米金刚石粉体之间。The joint of the composite vacuum gauge and the first pass of the four-way valve is provided with a vacuum valve between the composite vacuum gauge and the first pass of the four-way valve; Valve control, there is a flow meter between the second port of the four-way valve and the silane gas cylinder, the third port of the four-way valve is connected to the argon gas cylinder with a DN8 vacuum hose, and an argon valve is arranged between, and the four-way The fourth pass of the valve is connected with the quartz test tube in the vacuum tube furnace with a high vacuum tube, and a reaction valve is arranged between the fourth pass of the four-way valve and the quartz test tube. The beneficial effect is that the nano-diamond is purified and treated in a high vacuum state to desorb a large amount of oxygen-containing, nitrogen-containing and Cl-containing functional groups adsorbed on the surface. After cooling to room temperature, introduce silane gas into the reaction chamber, and fully infiltrate between the stacked nano-diamond powder under negative pressure.
所述所述的复合真空计的量程为0-10-6Pa,其有益效果是,测得高真空系统中的真空度,极限真空≤1x10-6Pa。The measuring range of the composite vacuum gauge is 0-10-6Pa, and its beneficial effect is that the vacuum degree in the high vacuum system is measured, and the ultimate vacuum is ≤1x10-6Pa.
所述高真空管与石英试管以环槽面法兰连接相连;石英试管与放气阀用密封套装结构连接,其有益效果是,通过几道密封圈的密封,其密封性可以得到有效保障,保证沉积时所需的高真空环境,有效避免硅烷气体使用时的安全隐患问题。设计了活动卡箍结构,卸物和置物时只需拧开卡箍,移开端盖,便可以将石英载物台取出或内置。这样既方便样品的放置和取出,也同时保证了纳米金刚石粉能平整均匀地铺开。The high-vacuum tube is connected to the quartz test tube with a ring groove surface flange connection; the quartz test tube is connected to the vent valve with a sealed sleeve structure, and its beneficial effect is that its sealing performance can be effectively guaranteed through the sealing of several sealing rings. The high-vacuum environment required for deposition effectively avoids potential safety hazards when using silane gas. The movable clamp structure is designed. When unloading and placing objects, you only need to unscrew the clamp and remove the end cover, then the quartz stage can be taken out or built in. This not only facilitates the placement and removal of samples, but also ensures that the nano-diamond powder can be spread evenly and evenly.
所述抽真空阀、硅烷阀、氩气阀、反应阀与四通阀连接,连接方式相同,采用不锈钢真空卡箍连接,其有益效果是,保证沉积时所需的高真空环境。其有益效果是,部分前驱体分子与纳米金刚石表面悬键反应形成单分子或多分子饱和吸附层,多余的气体分子均匀地弥散于纳米金刚石周围。然后通入惰性保护气 体并在一定温度条件下使得吸附物原位热解在纳米金刚石表面形成硅镀层。准原子硅烷镀覆层均匀镀覆,且厚度约为0.5nm~10nm。The vacuum valve, silane valve, argon valve, and reaction valve are connected to the four-way valve in the same way, and are connected by stainless steel vacuum clamps. The beneficial effect is to ensure the high vacuum environment required for deposition. The beneficial effect is that some precursor molecules react with dangling bonds on the surface of the nano-diamond to form a monomolecular or multi-molecular saturated adsorption layer, and redundant gas molecules are evenly dispersed around the nano-diamond. Then the inert protective gas is introduced and under certain temperature conditions, the adsorbate is pyrolyzed in situ to form a silicon coating on the surface of the nano-diamond. The quasi-atomic silane coating layer is uniformly coated, and the thickness is about 0.5nm-10nm.
所述放气阀与环槽面法兰连接,用焊接方式连接,其有益效果是,保证沉积时所需的高真空环境,有效避免硅烷气体使用时的安全隐患问题。The venting valve is connected to the flange of the ring groove surface by welding, which has the beneficial effect of ensuring the high vacuum environment required for deposition and effectively avoiding potential safety hazards in the use of silane gas.
所述的石英试管尺寸为它作为硅烷热解沉积的反应室,其有益效果是,保证纳米金刚石均匀受热,沉积温度约为300℃~650℃连续可调,温区稳定性为±1℃。The size of the quartz test tube is As a reaction chamber for pyrolytic deposition of silane, the beneficial effect is to ensure that the nano-diamond is heated evenly, the deposition temperature is continuously adjustable from about 300°C to 650°C, and the stability of the temperature zone is ±1°C.
附图说明Description of drawings
图1为纳米金刚石表面硅烷真空热解沉积设备的装配示意图;Fig. 1 is the assembly schematic diagram of silane vacuum pyrolysis deposition equipment on nano-diamond surface;
图2为端头密封套装结构示意图;Fig. 2 is a schematic diagram of the structure of the end seal set;
图3为硅原子镀覆纳米金刚石透射电镜图;Figure 3 is a transmission electron microscope image of silicon atom-coated nano-diamonds;
具体实施方式detailed description
一种硅烷真空热解沉积设备,包括机械泵1和真空泵2,通过四通阀3将硅烷进气口7、保护气体氩气进气口8与真空管式炉4中石英管5相连,以保证硅烷镀覆时所需的高真空环境。纳米金刚石放置于石英管5里面的载物台6上,在高真空、高温环境中净化处理纳米金刚石,使其表面吸附的大量含氧、含氮、含Cl官能团解吸。冷却至室温后向反应室中导入硅烷气体,流量计9控制通入硅烷的含量,使之负压下充分渗入堆积的纳米金刚石粉体之间。部分硅烷气体与纳米金刚石表面悬键反应形成单分子或多分子饱和吸附层,并均匀地弥散于纳米金刚石周围。然后从氩气进气口8通入保护气体氩气使得吸附物原位热解在纳米金刚石表面形成硅镀层。其中,真空度通过复合真空计10测得。A silane vacuum pyrolysis deposition equipment, comprising a mechanical pump 1 and a vacuum pump 2, the silane inlet 7, the protective gas argon inlet 8 are connected to the quartz tube 5 in the vacuum tube furnace 4 through a four-way valve 3, so as to ensure High vacuum environment required for silane plating. The nano-diamonds are placed on the stage 6 inside the quartz tube 5, and the nano-diamonds are purified in a high-vacuum, high-temperature environment to desorb a large number of functional groups containing oxygen, nitrogen, and Cl that are adsorbed on the surface. After cooling to room temperature, the silane gas is introduced into the reaction chamber, and the flow meter 9 controls the content of the silane so that it can fully infiltrate between the accumulated nano-diamond powder under negative pressure. Part of the silane gas reacts with the dangling bonds on the nano-diamond surface to form a monomolecular or multi-molecular saturated adsorption layer, which is uniformly dispersed around the nano-diamond. Then, the protective gas argon is introduced from the argon gas inlet 8 so that the adsorbate is pyrolyzed in situ to form a silicon coating on the surface of the nano-diamond. Wherein, the degree of vacuum is measured by a compound vacuum gauge 10 .
工作时,体系抽真空需先进行机械泵1抽真空,待其真空度达至5Pa以下,开扩散泵2使体系达到高真空度,真空度约达到8×10-3Pa~1×10-4Pa即可开始对体系加热;加热载有纳米金刚石的钼舟及反应腔体,温度升至400℃~700℃,在高真空度及高温下使纳米金刚石表面官能团悬键断开,再将其温度降至室温;先通入硅烷气体,进气时间为1s~40s,硅烷气体的流量通过流量计9控制,流量为1sccm~1000sccm,硅烷气体在沉积室内暴露时间为1min~50min,使硅烷吸附在金刚石表面;通入氩气时间为10~80s,氩气的气体流量为1ml/min~20ml/min,通气时间为5s~40s;通气以后开始加热,加热至400℃~600℃,硅烷高温下分解,硅原子与金刚石表面悬键结合。此时纳米金刚石表面附着原子级的硅。最后打开放气阀11,将实验剩余硅烷气体利用氩气驱散排出反应腔体。When working, the system needs to be vacuumed by the mechanical pump 1 first, and when the vacuum degree reaches below 5Pa, the diffusion pump 2 is turned on to make the system reach a high vacuum degree, and the vacuum degree reaches about 8×10-3Pa~1×10-4Pa You can start heating the system; heat the molybdenum boat and the reaction chamber loaded with nano-diamonds, and the temperature rises to 400 ° C ~ 700 ° C, and the functional group dangling bonds on the surface of the nano-diamonds are broken under high vacuum and high temperature, and then the temperature Cool down to room temperature; first feed silane gas, the intake time is 1s~40s, the flow rate of silane gas is controlled by flow meter 9, the flow rate is 1sccm~1000sccm, the exposure time of silane gas in the deposition chamber is 1min~50min, so that silane is adsorbed on Diamond surface; the argon gas flow time is 10-80s, the gas flow rate of argon gas is 1ml/min-20ml/min, and the aeration time is 5s-40s; after aeration, start heating, heating to 400℃~600℃, under the high temperature of silane When decomposed, the silicon atoms bind to the diamond surface with dangling bonds. At this time, atomic-level silicon is attached to the surface of the nano-diamond. Finally, the vent valve 11 was opened, and the remaining silane gas in the experiment was dispersed out of the reaction chamber with argon gas.
图3是硅烷镀覆后的纳米金刚石透射电镜图。图中表明,纳米金刚石表面硅原子镀层为原子级别,尺寸约为5nm,实现了纳米金刚石表面硅的原子级镀覆。Fig. 3 is a transmission electron microscope image of nano-diamond after silane plating. The figure shows that the silicon atom coating on the surface of the nano-diamond is at the atomic level, with a size of about 5nm, which realizes the atomic-level coating of silicon on the surface of the nano-diamond.
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