CN106824903A - The Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting and the ultrasonic tank for using - Google Patents
The Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting and the ultrasonic tank for using Download PDFInfo
- Publication number
- CN106824903A CN106824903A CN201611207156.2A CN201611207156A CN106824903A CN 106824903 A CN106824903 A CN 106824903A CN 201611207156 A CN201611207156 A CN 201611207156A CN 106824903 A CN106824903 A CN 106824903A
- Authority
- CN
- China
- Prior art keywords
- ultrasonic
- tank
- transonic
- ultrasonic tank
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- 239000013078 crystal Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000005520 cutting process Methods 0.000 title claims abstract description 29
- 238000002604 ultrasonography Methods 0.000 claims abstract description 25
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 235000013312 flour Nutrition 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 239000007921 spray Substances 0.000 claims description 20
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 239000004310 lactic acid Substances 0.000 claims description 6
- 235000014655 lactic acid Nutrition 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000004506 ultrasonic cleaning Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000006185 dispersion Substances 0.000 abstract description 2
- 238000004299 exfoliation Methods 0.000 abstract description 2
- 238000009736 wetting Methods 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 10
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 240000008005 Crotalaria incana Species 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 210000000481 breast Anatomy 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a kind of Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting, methods described comprises the following steps：(1) prerinse；(2) once it is cleaned by ultrasonic；(3) ultrasonic degumming；(4) ultrasound rinsing；The ultrasonic wave formed in first ultrasonic tank, the second ultrasonic tank, the 3rd ultrasonic tank separately at least has the first transonic direction, the second transonic direction in opposite direction with the first transonic, and with the 3rd vertical transonic direction of the first transonic direction and the second transonic direction.The present invention is designed to three directions of propagation with specific direction by by the ultrasonic wave in ultrasonic tank, realize ultrasonic wave being uniformly distributed in ultrasonic tank, improve the degree of wetting of crystal silicon chip slit reclaimed water, improve dispersion rate of the degumming agent in slit, improve the exfoliation rates of silica flour in slit, the usually time of the crystal silicon chip of Buddha's warrior attendant wire cutting is shortened, production efficiency is improve.
Description
Technical field
The invention belongs to polysilicon processing technique field, more particularly to a kind of cleaning side of the polysilicon of Buddha's warrior attendant wire cutting
Method.
Background technology
Diamond fretsaw cutting technique is current most potential silicon chip cutting technique.With mortar wire sawing technology phase
Than high with rate of cutting；Environmental pollution is small；Saw kerf is narrow, silicon loss is few；Cutting gained damaged layer on surface of silicon slice is thin, metal is dirty
The advantages of dye is small, thickness distribution is uniform；Especially silicon loss aspect can be such that diamond fretsaw cutting technique is cut than mortar scroll saw
Cut technology and obtain bigger cost advantage.
The process of Buddha's warrior attendant wire cutting is：Silicon casting is bonded on substrate by adhesive surely, workpiece is formed, afterwards using solid
Surely workpiece described in having the saw blade cutting of diamond wire, obtains polysilicon chip.The workpiece has the structure shown in Fig. 1, with base
Plate 100, tack coat 200 is bonded in the crystal silicon chip 300 on substrate 100 by tack coat 200, each crystal silicon chip 300 it
Between there is saw kerf 400, the inside of saw kerf 400 is full of the tiny silicon powder particle after cutting.
Degumming tech seeks to, by the binding agent removing on the workpiece, crystal silicon chip be peeled off from substrate.Diamond wire
The crystal silicon chip saw kerf 400 of cutting is narrow, and the degumming for silicon chip after cutting is very unfavorable.Degumming agent is difficult to rapidly enter and is full of
The purpose for reaching degumming is contacted in the saw kerf of silica flour with glue-line.It is more than 2 times of equal piece think gauge sand line piece that degumming takes, with
Upstream diamond wire cutting action speed is high, and production capacity is difficult to match greatly；
This area needs a kind of Degumming method matched with Buddha's warrior attendant wire cutting polysilicon chip technique of exploitation, improves diamond wire
Cut the production efficiency of polysilicon.
The content of the invention
In view of the shortcomings of the prior art, an object of the present invention is to provide a kind of crystal silicon chip of Buddha's warrior attendant wire cutting
Degumming method, methods described comprises the following steps：
(1) prerinse：The crystal silicon chip is carried out into prerinse, the loose silica flour formed in cutting process is removed；
(2) once it is cleaned by ultrasonic：Crystal silicon chip is placed in the first ultrasonic tank, is cleaned by ultrasonic；
(3) ultrasonic degumming：Crystal silicon chip is placed in the second ultrasonic tank containing degumming agent, ultrasonic degumming is carried out；
(4) ultrasound rinsing：Crystal silicon chip is placed in the 3rd ultrasonic tank, ultrasonic rinsing is carried out；
The ultrasonic wave formed in first ultrasonic tank, the second ultrasonic tank, the 3rd ultrasonic tank is separately extremely
Less have the first transonic direction, the second transonic direction in opposite direction with the first transonic, and with the first surpass
The 3rd vertical transonic direction of acoustic propagation direction and the second transonic direction.
Direction by designing transonic in ultrasonic tank of the invention, improves distribution of the ultrasonic wave in ultrasonic tank
Uniformity, increased the removal efficiency of silica flour, improve distribution speed of the degumming agent to slit, improve the degumming of crystal silicon chip
Speed.
Preferably, first ultrasonic tank, the second ultrasonic tank, the 3rd ultrasonic tank are respectively provided with perpendicular to the first ultrasound
First shake plate of the direction of propagation, with the second shake plate perpendicular to the second transonic direction, and passes perpendicular to the 3rd ultrasound
Broadcast the 3rd shake plate in direction.
Preferably, first ultrasonic tank, the second ultrasonic tank, the 3rd ultrasonic tank are cuboid tank, described the
One shake plate and the second shake plate are individually fixed on the cuboid tank length two sides more long, and the 3rd shake plate is fixed on institute
State on the bottom surface of cuboid tank.
The size of the shake plate is not limited, and the exemplary shake plate accounts for the 0.5~0.9 of the face area, for example
0.6th, 0.7,0.8 etc..
Ultrasonic tank (including the first ultrasonic tank, the second ultrasonic tank, the 3rd ultrasonic tank) of the present invention has bottom
Face, relative first side, second side, threeth side and fourth side vertical with first side, second side and bottom surface
Face；First side and second side are bigger than the 3rd side and the 4th side, and the first side and second side are length
Side more long, the 3rd side and the 4th side are the shorter side of length.
Preferably, the first shake plate is fixed in first side, and the second shake plate is fixed in second side, the 3rd shake plate
It is fixed on bottom surface.
Preferably, in first ultrasonic tank, the second ultrasonic tank, the 3rd ultrasonic tank, each transonic direction
The ultrasonic power of supersonic source be each independently selected from 800~1500W, such as 820W, 840W, 850W, 870W, 890W,
920W、940W、950W、970W、990W、1020W、1040W、1050W、1070W、1090W、1120W、1140W、1150W、
1170W、1190W、1220W、1240W、1250W、1270W、1290W、1320W、1340W、1350W、1370W、1390W、
1420W, 1440W, 1450W, 1470W, 1490W etc..
Preferably, the degumming agent includes lactic acid and/or citric acid.
Preferably, in second ultrasonic tank, the concentration of degumming agent is 60~80wt%, such as 62wt%, 65wt%,
68wt%, 72wt%, 75wt%, 78wt% etc..
Preferably, the water temperature of second ultrasonic tank be 60~75 DEG C, such as 62 DEG C, 65 DEG C, 67 DEG C, 70 DEG C, 72 DEG C,
73 DEG C etc..
Used as preferred embodiment, second ultrasonic tank is cuboid tank, wherein the first shake plate, the second shake
The ultrasonic power of plate and the 3rd shake plate is 1000W.
Preferably, ultrasonic time of the crystal silicon chip in the second ultrasonic tank be 500~700s, such as 520s,
550s, 600s, 650s, 670s, 680s etc..
Used as preferred embodiment, first ultrasonic tank is cuboid tank, wherein the first shake plate, the second shake
The ultrasonic power of plate and the 3rd shake plate is 1000W.
Preferably, ultrasonic time of the crystal silicon chip in the first ultrasonic tank be 300~500s, such as 320s,
350s, 400s, 450s, 470s, 480s etc..
Preferably, the water temperature of first ultrasonic tank is 35~45 DEG C, such as 37 DEG C, 39 DEG C, 42 DEG C, 43 DEG C etc..
Used as preferred embodiment, the 3rd ultrasonic tank is cuboid tank, wherein the first shake plate, the second shake
The ultrasonic power of plate and the 3rd shake plate is 1000W.
Preferably, ultrasonic time of the crystal silicon chip in the 3rd ultrasonic tank be 100-300s, such as 220s,
230s, 240s, 250s, 270s, 280s etc..
Preferably, the water temperature of the 3rd ultrasonic tank is 35~45 DEG C, such as 37 DEG C, 39 DEG C, 42 DEG C, 43 DEG C etc..
Used as preferred embodiment, the prerinse includes spray prerinse at least one times and ultrasound is pre- at least one times
Cleaning, preferably includes first time spray prerinse, for the first time ultrasonic prerinse and the prerinse of second spray for carrying out successively.
Preferably, the prerinse of first time spray, for the first time ultrasonic prerinse and prewashed temperature is sprayed for the second time
It is 20~30 DEG C, such as 23 DEG C, preferably 26 DEG C, 27 DEG C etc., 25 DEG C；
Preferably, spray prerinse time first time is 100~300s, such as 120s, 130s, 140s, 150s,
170s, 180s, 220s, 230s, 240s, 250s, 270s, 280s etc..
Preferably, ultrasound prerinse time first time is 100~300s, such as 120s, 130s, 140s, 150s,
170s, 180s, 220s, 230s, 240s, 250s, 270s, 280s etc..
Preferably, the second spray prerinse time is 100~300s, such as 120s, 130s, 140s, 150s,
170s, 180s, 220s, 230s, 240s, 250s, 270s, 280s etc..
Preferably, in the Degumming method, the temperature difference between adjacent tank is below 25 DEG C.
The temperature difference between adjacent tank can reduce the loss of silicon chip processing procedure below 25 DEG C.
Used as preferred embodiment, the Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting of the present invention is including as follows
Step：
(1) prerinse：The crystal silicon chip is carried out the first time spray prerinse 100~300s at 25 DEG C, 25 successively
Second 100~300s of spray prerinse at first time ultrasound 100~300s of prerinse and 25 DEG C at DEG C；
(2) once it is cleaned by ultrasonic：Crystal silicon chip is placed in 35~45 DEG C of the first ultrasonic tank, is cleaned by ultrasonic
300~500s, first ultrasonic tank has and three surpasses in the first transonic direction, the second transonic direction and the respectively
The ultrasonic power of 1000W on acoustic propagation direction；
(3) ultrasonic degumming：Crystal silicon chip is placed in 60~75 DEG C containing degumming agent of the second ultrasonic tank, is surpassed
500~700s of sound degumming, second ultrasonic tank have respectively the first transonic direction, the second transonic direction and
The ultrasonic power of 1000W on 3rd transonic direction；
(4) ultrasound rinsing：Crystal silicon chip is placed in 35~50 DEG C of the 3rd ultrasonic tank, carry out ultrasound rinsing 200~
300s, second ultrasonic tank has respectively in the first transonic direction, the second transonic direction and the 3rd ultrasound biography
Broadcast the ultrasonic power of 1000W on direction.
The two of the object of the invention are to provide a kind of ultrasonic tank of the crystal silicon chip Degumming method for Buddha's warrior attendant wire cutting, institute
The ultrasonic wave for stating ultrasonic tank formation at least has the first transonic direction, and in opposite direction with the first transonic the second surpasses
Acoustic propagation direction, and with the 3rd vertical transonic direction of the first transonic direction and the second transonic direction.
Preferably, the ultrasonic tank has and shakes plate perpendicular to the first of the first transonic direction, with perpendicular to the
The second shake plate in two transonic directions, and shake plate perpendicular to the 3rd of the 3rd transonic direction.
Preferably, the ultrasonic tank is cuboid tank, and the first shake plate and the second shake plate are individually fixed in described
On cuboid tank length two sides more long, the 3rd shake plate is fixed on the bottom surface of the cuboid tank.
Preferably, in the ultrasonic tank, the ultrasonic power of the supersonic source in each transonic direction is independently of one another
Selected from 800~1500W.
Preferably, the ultrasonic tank is used for the crystal silicon chip Degumming method of Buddha's warrior attendant wire cutting as claimed in claim 1.
Compared with prior art, the present invention has the advantages that：
The present invention is designed to three directions of propagation with specific direction by by the ultrasonic wave in ultrasonic tank, realizes
Ultrasonic wave being uniformly distributed in ultrasonic tank, improves the degree of wetting of crystal silicon chip slit reclaimed water, improves degumming agent narrow
Dispersion rate in seam, improves the exfoliation rates of silica flour in slit, during the degumming of the crystal silicon chip for shortening Buddha's warrior attendant wire cutting
Between, improve production efficiency.
Brief description of the drawings
The structural representation of workpiece after Fig. 1 Buddha's warrior attendant wire cuttings；
The structural representation of Fig. 2 ultrasonic tanks S1；
Fig. 3 ultrasonic tanks S1 along A faces cross-sectional view.
Specific embodiment
For ease of understanding the present invention, it is as follows that the present invention enumerates embodiment.Those skilled in the art are it will be clearly understood that the implementation
Example is only to aid in understanding the present invention, is not construed as to concrete restriction of the invention.
Fig. 2~Fig. 3 gives a kind of ultrasonic tank S1, with rectangular structure, with bottom surface 5, relative first side
1st, second side 2, threeth side 3 and fourth side 4 vertical with first side 1, second side 2 and bottom surface；First side 1
Bigger than the 3rd side 3 and the 4th side 4 with the face of the second side 2, the first side 1 and second side 2 are length side more long
Face, the 3rd side 3 and the 4th side 4 are the shorter side of length；The first shake plate 11 is fixed in first side 1, the
Two shake plates 21 are fixed in second side 2, and the first shake shake plate 21 of plate 11 and second is relative；The 3rd shake plate 31 is fixed on bottom
On face 5, and the first shake shake plate 21 and the 3rd of plate 11, second shakes plate 31 to tank internal emission ultrasonic wave.Fig. 2 ultrasonic tanks S1
Structural representation；Fig. 3 ultrasonic tanks S1 along A faces cross-sectional view.
The size of the shake plate is not limited, and the exemplary shake plate accounts for the 0.5~0.9 of the face area, for example
0.6th, 0.7,0.8 etc..
Embodiment 1~3
There is provided a kind of Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting, treatment silicon chip quantity is 2500, the side
Method comprises the following steps：
(1) prerinse：The crystal silicon chip is carried out the first time spray prerinse 100~300s at 25 DEG C, 25 successively
Second 100~300s of spray prerinse at first time ultrasound 100~300s of prerinse and 25 DEG C at DEG C；
(2) once it is cleaned by ultrasonic：Crystal silicon chip is placed in 35~45 DEG C of the first ultrasonic tank, is cleaned by ultrasonic
300~500s, first ultrasonic tank has and three surpasses in the first transonic direction, the second transonic direction and the respectively
The ultrasonic power of 1000W on acoustic propagation direction；
(3) ultrasonic degumming：Crystal silicon chip is placed in 60~75 DEG C containing degumming agent of the second ultrasonic tank, is surpassed
500~700s of sound degumming, second ultrasonic tank have respectively the first transonic direction, the second transonic direction and
The ultrasonic power of 1000W on 3rd transonic direction；
(4) ultrasound rinsing：Crystal silicon chip is placed in 35~50 DEG C of the 3rd ultrasonic tank, carry out ultrasound rinsing 200~
300s, second ultrasonic tank has respectively in the first transonic direction, the second transonic direction and the 3rd ultrasound biography
Broadcast the ultrasonic power of 1000W on direction.
The concrete technology condition of embodiment 1 such as table 1：
Table 1
Wherein, the ultrasonic tank that 4# grooves and 6# grooves are provided using Fig. 2~3, is added with the lactic acid of 70wt% in 5# grooves.
The concrete technology condition of embodiment 2 such as table 2：
Table 2
Wherein, the ultrasonic tank that 4# grooves and 6# grooves are provided using Fig. 2~3, is added with the lactic acid of 60wt% in 5# grooves.
The concrete technology condition of embodiment 3 such as table 3：
Table 3
Wherein, the ultrasonic tank that 2# grooves, 4# grooves and 6# grooves are provided using Fig. 2~3, is added with the breast of 80wt% in 5# grooves
Acid.
Comparative example 1
Difference with embodiment 1 is, 4# grooves and 5# grooves do not use the ultrasonic tank that Fig. 2~3 provide, only use ultrasonic water
Groove A1, the ultrasonic tank A1 only have the 3rd shake plate without the first shake plate and the second shake plate in bottom surface.Degumming 5# grooves take
It is 2000s.
Comparative example 2
Difference with embodiment 1 is, 4# grooves and 5# grooves do not use the ultrasonic tank that Fig. 2~3 provide, only use ultrasonic water
Groove A2, the ultrasonic tank A2 only have the first shake plate without the 3rd shake plate in first side, have second in second side
Shake plate.It is 1800s that degumming 5# grooves take.
Comparative example 3
Difference with comparative example 2 is, concrete technology condition such as table 4：
| Groove is numbered | 1# grooves | 2# grooves | 3# grooves | 4# grooves | 5# grooves | 6# grooves |
| Function | Spray | Ultrasound | Spray | Ultrasound | Ultrasonic degumming | It is cleaned by ultrasonic |
| Temperature/DEG C | 25 | 25 | 25 | 30 | 75 | 50 |
| Time/s | 400 | 400 | 400 | 400 | 1200 | 240 |
The lactic acid of 80wt% is added with 5# grooves.
Comparative example 4
Difference with embodiment 1 is that degumming agent is the lactic acid of 50wt%.It is 1200s that degumming takes.
Degumming takes：The actual run time of degumming 5# grooves when silicon chip is completely exfoliated.
Performance test：
The workpiece that embodiment and comparative example degumming are finished carries out the peeling of silicon chip, degumming the when statistics silicon chip is completely exfoliated
The run time statistics of five grooves is as shown in the table.
| Degumming takes, s | |
| Embodiment 1 | 550 |
| Embodiment 2 | 500 |
| Embodiment 3 | 600 |
| Comparative example 1 | 2000 |
| Comparative example 2 | 1800 |
| Comparative example 3 | 1200 |
| Comparative example 4 | 1200 |
Applicant states that the present invention illustrates detailed process equipment of the invention and technological process by above-described embodiment,
But the invention is not limited in above-mentioned detailed process equipment and technological process, that is, do not mean that the present invention has to rely on above-mentioned detailed
Process equipment and technological process could be implemented.Person of ordinary skill in the field it will be clearly understood that any improvement in the present invention,
Addition, the selection of concrete mode to the equivalence replacement and auxiliary element of each raw material of product of the present invention etc., all fall within of the invention
Within the scope of protection domain and disclosure.
Claims (10)
1. a kind of Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting, it is characterised in that methods described comprises the following steps：
(1) prerinse：The crystal silicon chip is carried out into prerinse, the loose silica flour formed in cutting process is removed；
(2) once it is cleaned by ultrasonic：Crystal silicon chip is placed in the first ultrasonic tank, is cleaned by ultrasonic；
(3) ultrasonic degumming：Crystal silicon chip is placed in the second ultrasonic tank containing degumming agent, ultrasonic degumming is carried out；
(4) ultrasound rinsing：Crystal silicon chip is placed in the 3rd ultrasonic tank, ultrasonic rinsing is carried out；
The ultrasonic wave formed in first ultrasonic tank, the second ultrasonic tank, the 3rd ultrasonic tank separately at least has
There are the first transonic direction, the second transonic direction in opposite direction with the first transonic, and passed with the first ultrasound
Broadcast the 3rd vertical transonic direction of direction and the second transonic direction.
2. Degumming method as claimed in claim 1, it is characterised in that first ultrasonic tank, the second ultrasonic tank, the 3rd
Ultrasonic tank is respectively provided with and shakes plate perpendicular to the first of the first transonic direction, with perpendicular to the of the second transonic direction
Two shake plates, and shake plate perpendicular to the 3rd of the 3rd transonic direction；
Preferably, first ultrasonic tank, the second ultrasonic tank, the 3rd ultrasonic tank are cuboid tank, first shake
Plate and the second shake plate are individually fixed on the cuboid tank length two sides more long, and the 3rd shake plate is fixed on the length
On the bottom surface of cube tank；
Preferably, in first ultrasonic tank, the second ultrasonic tank, the 3rd ultrasonic tank, each transonic direction it is super
The ultrasonic power of sound source is each independently selected from 800~1500W.
3. Degumming method as claimed in claim 1 or 2, it is characterised in that the degumming agent includes lactic acid and/or citric acid；
Preferably, in second ultrasonic tank, the concentration of degumming agent is 60~80wt%；
Preferably, the water temperature of second ultrasonic tank is 60~75 DEG C.
4. the Degumming method as described in one of claims 1 to 3, it is characterised in that second ultrasonic tank is cuboid water
Groove, wherein the ultrasonic power of the first shake plate, the second shake plate and the 3rd shake plate is 1000W；
Preferably, ultrasonic time of the crystal silicon chip in the second ultrasonic tank is 500~700s.
5. the Degumming method as described in one of Claims 1 to 4, it is characterised in that first ultrasonic tank is cuboid water
Groove, wherein the ultrasonic power of the first shake plate, the second shake plate and the 3rd shake plate is 1000W；
Preferably, ultrasonic time of the crystal silicon chip in the first ultrasonic tank is 300~500s；
Preferably, the water temperature of first ultrasonic tank is 35~45 DEG C.
6. the Degumming method as described in one of Claims 1 to 5, it is characterised in that the 3rd ultrasonic tank is cuboid water
Groove, wherein the ultrasonic power of the first shake plate, the second shake plate and the 3rd shake plate is 1000W；
Preferably, ultrasonic time of the crystal silicon chip in the 3rd ultrasonic tank is 200~300s；
Preferably, the water temperature of the 3rd ultrasonic tank is 35~45 DEG C.
7. the Degumming method as described in one of claim 1~6, it is characterised in that the prerinse includes spraying at least one times
Prerinse and at least one times ultrasonic prerinse, for the first time the first time spray prerinse for preferably including to carry out successively, ultrasound are pre- clear
Wash and the prerinse of second spray；
Preferably, it is 20 that the first time sprays prerinse, for the first time ultrasonic prerinse and sprays prewashed temperature for the second time
~30 DEG C, preferably 25 DEG C；
Preferably, spray prerinse time first time is 100~300s；
Preferably, ultrasound prerinse time first time is 100~300s；
Preferably, the second spray prerinse time is 100~300s.
8. the Degumming method as described in one of claim 1~7, it is characterised in that in the Degumming method, between adjacent tank
The temperature difference below 25 DEG C.
9. the Degumming method as described in one of claim 1~8, it is characterised in that methods described comprises the following steps：
(1) prerinse：The crystal silicon chip is carried out the first time spray 100~300s of prerinse at 25 DEG C successively, at 25 DEG C
First time ultrasound 100~300s of prerinse and 25 DEG C at second spray prerinse 100~300s；
(2) once it is cleaned by ultrasonic：Crystal silicon chip is placed in 35~45 DEG C of the first ultrasonic tank, carry out ultrasonic cleaning 300~
500s, first ultrasonic tank has respectively in the first transonic direction, the second transonic direction and the 3rd ultrasound biography
Broadcast the ultrasonic power of 1000W on direction；
(3) ultrasonic degumming：Crystal silicon chip is placed in 60~75 DEG C containing degumming agent of the second ultrasonic tank, carries out ultrasound de-
500~700s of glue, second ultrasonic tank has respectively in the first transonic direction, the second transonic direction and the 3rd
The ultrasonic power of 1000W on transonic direction；
(4) ultrasound rinsing：Crystal silicon chip is placed in 35~45 DEG C of the 3rd ultrasonic tank, ultrasound 200~300s of rinsing is carried out,
Second ultrasonic tank has respectively in the first transonic direction, the second transonic direction and the 3rd transonic direction
The ultrasonic power of upper 1000W.
10. a kind of ultrasonic tank of crystal silicon chip Degumming method for Buddha's warrior attendant wire cutting, it is characterised in that the ultrasonic tank
The ultrasonic wave of formation at least has the first transonic direction, the second transonic side in opposite direction with the first transonic
To, and with the 3rd vertical transonic direction of the first transonic direction and the second transonic direction；
Preferably, the ultrasonic tank has and shakes plate perpendicular to the first of the first transonic direction, with perpendicular to the second surpassing
The second shake plate in acoustic propagation direction, and shake plate perpendicular to the 3rd of the 3rd transonic direction；
Preferably, the ultrasonic tank be cuboid tank, it is described first shake plate and second shake plate be individually fixed in it is described rectangular
On body tank length two sides more long, the 3rd shake plate is fixed on the bottom surface of the cuboid tank；
Preferably, in the ultrasonic tank, the ultrasonic power of the supersonic source in each transonic direction is each independently selected from
800~1500W；
Preferably, the ultrasonic tank is used for the crystal silicon chip Degumming method of Buddha's warrior attendant wire cutting as claimed in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611207156.2A CN106824903A (en) | 2016-12-23 | 2016-12-23 | The Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting and the ultrasonic tank for using |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611207156.2A CN106824903A (en) | 2016-12-23 | 2016-12-23 | The Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting and the ultrasonic tank for using |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106824903A true CN106824903A (en) | 2017-06-13 |
Family
ID=59135862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611207156.2A Pending CN106824903A (en) | 2016-12-23 | 2016-12-23 | The Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting and the ultrasonic tank for using |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106824903A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107818935A (en) * | 2017-12-06 | 2018-03-20 | 常州市科沛达超声工程设备有限公司 | Wafer resist remover |
| CN108372149A (en) * | 2018-03-10 | 2018-08-07 | 中锗科技有限公司 | A kind of Degumming method of wire cutting solar energy germanium wafer |
| CN108447810A (en) * | 2018-05-17 | 2018-08-24 | 江苏高照新能源发展有限公司 | A kind of novel adamantine line silicon wafer stripping machine |
| CN109926392A (en) * | 2017-12-18 | 2019-06-25 | 隆基绿能科技股份有限公司 | Multi-panel supersonic wave cleaning machine and silicon wafer cleaning method |
| CN109979799A (en) * | 2017-12-27 | 2019-07-05 | 东莞新科技术研究开发有限公司 | The Degumming method of semiconductor wafer |
| CN112745991A (en) * | 2019-10-31 | 2021-05-04 | 洛阳阿特斯光伏科技有限公司 | Degumming agent and preparation method and application thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5505785A (en) * | 1994-07-18 | 1996-04-09 | Ferrell; Gary W. | Method and apparatus for cleaning integrated circuit wafers |
| JP2007136425A (en) * | 2005-11-22 | 2007-06-07 | Disco Abrasive Syst Ltd | Cleaning method and cleaning equipment |
| CN200970587Y (en) * | 2006-11-17 | 2007-11-07 | 燕山大学 | Ultrasonic cleaner capable of continuous discharging pollution |
| CN201728203U (en) * | 2010-06-23 | 2011-02-02 | 上海科邦医用乳胶器材有限公司 | Ultrasonic cleaning tank |
| CN102225406A (en) * | 2011-04-30 | 2011-10-26 | 常州天合光能有限公司 | A kind of cleaning method of diamond wire cutting silicon wafer |
| CN102294332A (en) * | 2011-08-08 | 2011-12-28 | 江西金葵能源科技有限公司 | Method for cleaning silicon wafer linearly cut by diamond |
| CN102327882A (en) * | 2011-08-12 | 2012-01-25 | 无锡尚品太阳能电力科技有限公司 | Cleaning process of monocrystalline silicon wafer |
| CN202555543U (en) * | 2012-05-21 | 2012-11-28 | 浙江晟辉科技有限公司 | Supersonic wave cleaning machine |
| CN203002693U (en) * | 2012-12-07 | 2013-06-19 | 西安隆基硅材料股份有限公司 | Degumming pre-washing device for diamond-wire cut monocrystalline silicon piece |
| CN103658096A (en) * | 2012-08-31 | 2014-03-26 | 浙江昱辉阳光能源有限公司 | Method for cleaning diamond wire cut silicon wafers |
-
2016
- 2016-12-23 CN CN201611207156.2A patent/CN106824903A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5505785A (en) * | 1994-07-18 | 1996-04-09 | Ferrell; Gary W. | Method and apparatus for cleaning integrated circuit wafers |
| JP2007136425A (en) * | 2005-11-22 | 2007-06-07 | Disco Abrasive Syst Ltd | Cleaning method and cleaning equipment |
| CN200970587Y (en) * | 2006-11-17 | 2007-11-07 | 燕山大学 | Ultrasonic cleaner capable of continuous discharging pollution |
| CN201728203U (en) * | 2010-06-23 | 2011-02-02 | 上海科邦医用乳胶器材有限公司 | Ultrasonic cleaning tank |
| CN102225406A (en) * | 2011-04-30 | 2011-10-26 | 常州天合光能有限公司 | A kind of cleaning method of diamond wire cutting silicon wafer |
| CN102294332A (en) * | 2011-08-08 | 2011-12-28 | 江西金葵能源科技有限公司 | Method for cleaning silicon wafer linearly cut by diamond |
| CN102327882A (en) * | 2011-08-12 | 2012-01-25 | 无锡尚品太阳能电力科技有限公司 | Cleaning process of monocrystalline silicon wafer |
| CN202555543U (en) * | 2012-05-21 | 2012-11-28 | 浙江晟辉科技有限公司 | Supersonic wave cleaning machine |
| CN103658096A (en) * | 2012-08-31 | 2014-03-26 | 浙江昱辉阳光能源有限公司 | Method for cleaning diamond wire cut silicon wafers |
| CN203002693U (en) * | 2012-12-07 | 2013-06-19 | 西安隆基硅材料股份有限公司 | Degumming pre-washing device for diamond-wire cut monocrystalline silicon piece |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107818935A (en) * | 2017-12-06 | 2018-03-20 | 常州市科沛达超声工程设备有限公司 | Wafer resist remover |
| CN109926392A (en) * | 2017-12-18 | 2019-06-25 | 隆基绿能科技股份有限公司 | Multi-panel supersonic wave cleaning machine and silicon wafer cleaning method |
| CN109979799A (en) * | 2017-12-27 | 2019-07-05 | 东莞新科技术研究开发有限公司 | The Degumming method of semiconductor wafer |
| CN108372149A (en) * | 2018-03-10 | 2018-08-07 | 中锗科技有限公司 | A kind of Degumming method of wire cutting solar energy germanium wafer |
| CN108447810A (en) * | 2018-05-17 | 2018-08-24 | 江苏高照新能源发展有限公司 | A kind of novel adamantine line silicon wafer stripping machine |
| CN108447810B (en) * | 2018-05-17 | 2023-03-31 | 江苏美科太阳能科技股份有限公司 | Novel diamond wire silicon wafer degumming machine |
| CN112745991A (en) * | 2019-10-31 | 2021-05-04 | 洛阳阿特斯光伏科技有限公司 | Degumming agent and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106824903A (en) | The Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting and the ultrasonic tank for using | |
| CN105409119B (en) | Composite substrate and its manufacturing method | |
| CN104918411B (en) | A method and device for removing orifice burrs | |
| CN103035580B (en) | Temporary bonding and dissociating process method applied to thin silicon slices | |
| CN109285762A (en) | A silicon wafer edge processing technology for gallium nitride epitaxy | |
| CN108447670A (en) | A kind of preparation method of used in high-speed motor permanent magnet ndfeb composite magnetic steel | |
| CN103031012B (en) | A kind of compositions and the method for preparing diamond fretsaw thereof | |
| CN102617042A (en) | Method and equipment for etching glass | |
| CN106733876A (en) | A kind of cleaning method of the crystalline silicon of Buddha's warrior attendant wire cutting | |
| CN103579107B (en) | A kind of thin film circuit cutting-up method based on mask plating | |
| JP5495981B2 (en) | Manufacturing method of semiconductor substrate | |
| JP2018535562A (en) | Method and apparatus for manufacturing a semiconductor layer | |
| CN105762062B (en) | A kind of gallium arsenide semiconductor substrate wet-etching technology | |
| CN109016196A (en) | A kind of electroplating diamond wire saw | |
| JP6398827B2 (en) | Method for manufacturing electrode plate for plasma processing apparatus | |
| TW202327743A (en) | Device and method for washing debris and silicon wafer chamfering equipment prevent debris from remaining on silicon wafer and grinding member | |
| CN202998019U (en) | Elastic wave filter and elastic wave device with elastic wave filter | |
| JP2006286694A (en) | Dicing equipment and dicing method | |
| CN103402313B (en) | A kind of miniature thin-film circuit cutting-up method | |
| WO2014155624A1 (en) | Semiconductor-wafer manufacturing method and semiconductor wafer | |
| JP2010080829A (en) | Cleaning device, method of manufacturing substrate, and solar battery element | |
| JP5510935B2 (en) | Manufacturing method of semiconductor wafer | |
| CN102941627B (en) | Application method of micropore flat plate and preparation method of micropore glass | |
| CN107894435A (en) | A kind of preparation method of PCB half bore section | |
| CN107516698A (en) | GaAs-based flip-chip LED chip, manufacturing method thereof, and LED display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170613 |