CN106800270B - Plate structure, electrostatic drive structure using the same, and manufacturing method thereof - Google Patents
Plate structure, electrostatic drive structure using the same, and manufacturing method thereof Download PDFInfo
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- CN106800270B CN106800270B CN201510844166.6A CN201510844166A CN106800270B CN 106800270 B CN106800270 B CN 106800270B CN 201510844166 A CN201510844166 A CN 201510844166A CN 106800270 B CN106800270 B CN 106800270B
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000013016 damping Methods 0.000 claims abstract description 87
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 230000007246 mechanism Effects 0.000 abstract description 16
- 230000033001 locomotion Effects 0.000 abstract description 14
- 238000010586 diagram Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00166—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Micromachines (AREA)
Abstract
A kind of electrode plate structure of the present invention, using electro-static driving mechanism of the electrode plate structure and preparation method thereof, the one side of the electrode plate structure is equipped at least one damping hole for running through the electrode plate structure up and down, wherein, the upper opening area of the damping hole or under shed area are greater than the area of side opening.Damping hole of the invention can be prepared easily with state of the art, simultaneously, using the electrode plate structure of this damping hole in the movable member being used as in face, when relative motion occurs for movable member, air between two movable members by constraint no longer because being squeezed, but damping hole is entered by the lesser air inlet of area and is released rapidly by the biggish upper opening of area or under shed, to reduce damping force.Simultaneously as the side opening area of damping hole is smaller, makes polar plate area loss will not be excessive, electrostatic force will not be substantially reduced, enable and biggish electrostatic force/damping force ratio is obtained using the electro-static driving mechanism of the electrode plate structure.
Description
Technical field
The invention belongs to MEMS actuator field, it is related to a kind of electrode plate structure, the electrostatic using the electrode plate structure
Driving structure and preparation method thereof.
Background technique
It in macro-mechanical, due to air damping very little, does not consider generally, but with the diminution of device dimension, air
The influence of damping becomes significantly, in order to improve device performance, it is necessary to try to reduce the effect of air damping.Usually, it utilizes
Vacuum Package can be with effective solution this problem, but Vacuum Package will lead to manufacturing process complexity, at high cost and flexible
Therefore the problems such as property is poor finds a kind of method for effectively reducing air damping except Vacuum Package and solves at a urgent need
The problem of.
Press-filming damping is a kind of damping common in MEMS, and in the case where no Vacuum Package, it is to gap
The dynamic characteristic of variable micro-structure has a great impact.When the spacing of two movable members is in micron dimension, fluid is (usually
It is air) it is bound, the effect of power will be damped when their relative motions.Damping force has the non-linear of height, and
And depend on ambient gas medium, the geometry of component and the movement of device.In inertial MEMS, damping force is not only
Decide that the dynamic response of device has an effect on the background noise of system.
When designing movable capacitance type structure (sensing, electrostatic drive or both are had both), press-filming damping is in the performance of system
It plays a crucial role.Therefore, the design of damper would generally be responded and be traded off between noise in sensitivity.It is right
In the device (such as gyroscope) for needing high q-factor, Vacuum Package can only be used.
So far, to the most of the press-filming damping of plate electrode research, also most typically.It is common in order to reduce damping
Way is that some damping holes are etched on pole plate, to accelerate the release of air-flow in pole plate relative motion, to reduce resistance.
But this method is only applicable to two pole plates (as shown in Figure 1) outside face, and the pole plate in opposite, since technical level can not be
The damping hole of horizontal direction is etched on side wall, it is therefore desirable to solution in addition.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of electrode plate structure, using the pole
The electro-static driving mechanism and preparation method thereof of hardened structure, it is larger for solving to damp between the pole plate of in-plane moving in the prior art
The problem of.
In order to achieve the above objects and other related objects, the present invention provides a kind of electrode plate structure, and the one of the electrode plate structure
Side is equipped at least one damping hole for running through the electrode plate structure up and down, wherein the damping hole is in the electrode plate structure
The side, the upper surface and the lower surface opening be respectively side opening, upper opening and under shed, and the area of the upper opening or
The area of under shed is greater than the area of the side opening.
Optionally, the profile of the upper opening or under shed is surrounded by least three sections of straight lines.
Optionally, the upper opening or the shape of under shed include T-type or trapezoidal.
Optionally, by least one section of straight line and at least one section of camber line surrounds the profile of the upper opening or under shed.
Optionally, the electrode plate structure another side opposite with the side also is provided with the damping hole.
The present invention also provides a kind of production methods of electrode plate structure, include the following steps:
S1: providing a substrate, etches curved cavity in the substrate, and form one absolutely on the curved cavity surface
Edge layer；
S2: a structure piece is provided by the structure piece and the substrate bonding and closes the curved cavity；
S3: thickness needed for the structure piece is thinned to production electrode plate structure；
S4: the structure piece is etched, obtains electrode plate structure above the curved cavity；The one side of the electrode plate structure
Run through the damping hole of the electrode plate structure up and down equipped at least one, wherein the damping hole is described in the electrode plate structure
Side, the upper surface and the lower surface opening be respectively side opening, upper opening and under shed, and the area of the upper opening or under open
The area of mouth is greater than the area of the side opening.
Optionally, in Yu Suoshu step S4, the damping hole is obtained using dry etching.
Optionally, the electrode plate structure another side opposite with the side also is provided with the damping hole.
The present invention also provides a kind of electro-static driving mechanisms using electrode plate structure described in above-mentioned any one.
Optionally, the electro-static driving mechanism includes movable electrode and fixed electrode；The movable electrode and the fixation
Electrode performs relative motion in the same plane.
Optionally, at least one in the movable electrode and the fixed electrode uses the electrode plate structure.
Optionally, the movable electrode and fixed electrode are interdigital electrode, and the interdigital of the interdigital electrode uses institute
State electrode plate structure.
As described above, electrode plate structure of the invention, using electro-static driving mechanism of the electrode plate structure and preparation method thereof, tool
Have following the utility model has the advantages that damping hole runs through electrode plate structure up and down, and has in electrode plate structure side wall in electrode plate structure of the invention
Side opening, and the area of the area of the upper opening of the damping hole or under shed is greater than the area of the side opening.This damping
Hole can prepare easily with state of the art, meanwhile, using the electrode plate structure of this damping hole in the movable part being used as in face
When part, the side opening can be used as air inlet, the upper opening or under shed as exhaust outlet, when opposite fortune occurs for movable member
When dynamic, the air between two movable members passes through the lesser air inlet of area no longer because being squeezed by constraint
Mouth enters damping hole and is released rapidly by the biggish upper opening of area or under shed, to reduce damping force.Meanwhile
Since the side opening area of damping hole is smaller, makes polar plate area loss will not be excessive, electrostatic force will not be substantially reduced, so that using
The electro-static driving mechanism of the electrode plate structure can obtain biggish electrostatic force/damping force ratio, can effectively improve system
Dynamic characteristic and the background noise for reducing system.
Detailed description of the invention
Fig. 1 is shown as the schematic diagram of two pole plate relative motions outside face in the prior art.
Fig. 2 is shown as the top view of electrode plate structure of the invention
Fig. 3 is shown as the perspective view of electrode plate structure of the invention.
Fig. 4 is shown as the schematic diagram of two movable member relative motions in face using electrode plate structure of the invention.
Fig. 5 is shown as the perspective view of structure shown in Fig. 4.
Fig. 6 is shown as directly making the schematic diagram of a biggish damping hole in electrode plate structure side.
Fig. 7 to Fig. 9 is shown as the schematic diagrames of several damping pore structures in electrode plate structure of the invention.
Figure 10 is shown as the schematic diagram that the opposite side of electrode plate structure a pair of the invention is equipped with the damping hole.
The production method that Figure 11 is shown as electrode plate structure of the invention etches curved cavity in the substrate, and described recessed
Cavity configuration surface forms the schematic diagram of an insulating layer.
The production method that Figure 12 is shown as electrode plate structure of the invention provides a structure piece, by the structure piece and the lining
Bottom bonding, closes the schematic diagram of curved cavity.
The structure piece is thinned to production electrode plate structure institute by the production method that Figure 13 is shown as electrode plate structure of the invention
The schematic diagram of the thickness needed.
The production method that Figure 14 is shown as electrode plate structure of the invention etches the structure piece, above the curved cavity
Obtain the schematic diagram of electrode plate structure.
Figure 15 is shown as a kind of electro-static driving mechanism using interdigital electrode, interdigital electrode it is interdigital using of the invention
Electrode plate structure.
Component label instructions
1 electrode plate structure
101 damping holes
1011 side openings
1012 upper openings
1013 under sheds
201 substrates
202 curved cavities
203 insulating layers
204 structure pieces
3 electro-static driving mechanisms
301 is movable interdigital
302 fixations are interdigital
303 mass blocks
304 supporting beams
305 anchor points
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 2 is please referred to Figure 15.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment one
The present invention provides a kind of electrode plate structure, and please refer to figs. 2 and 3, be respectively indicated as the electrode plate structure 1 top view and
Perspective view, as shown, the one side of the electrode plate structure 1 is equipped at least one damping for running through the electrode plate structure 1 up and down
Hole 101, wherein the damping hole 101 is respectively side in the side of the electrode plate structure, the opening of the upper surface and the lower surface
Opening 1011, upper opening 1012 and under shed 1013, and the area of the area of the upper opening 1012 or under shed 1013 is greater than
The area of the side opening 1011.
Show as shown in figure 4, being shown as the relative motion in face of two movable members using electrode plate structure of the invention
It is intended to.Relative motion refers to that two movable members perform relative motion in the same plane in face herein.Fig. 5 is shown as shown in Fig. 4
The perspective view of structure.
When no damping hole, when movable member makees relative motion in face, due to the extruding of air between pole plate, so that
Pole plate is by biggish press-filming damping.It is characteristic of the invention that being equipped with the damping for running through electrode plate structure up and down in electrode plate structure side
Hole can reduce damping force with the extruded air of quick release.
Importantly, in electrode plate structure of the invention, the area or under shed of the upper opening 1012 of the damping hole
1013 area is greater than the area of the side opening 1011.As shown in fig. 6, being shown as directly making one in electrode plate structure side
The schematic diagram of biggish damping hole, although damping force can be effectively reduced in this case, due to electrostatic force and damping force
Size it is directly proportional to the area of pole plate, the biggish damping hole in electrode plate structure side also result in electrostatic force reduction, can not obtain
Obtain bigger electrostatic force/damping force ratio.And as shown in fig. 7, the area or under shed of the upper opening of damping hole of the invention
Area is greater than the area of the side opening, described using the electrode plate structure of this damping hole in the movable member being used as in face
Side opening can be used as air inlet, the upper opening or under shed as exhaust outlet and be located at when relative motion occurs for movable member
Air between two movable members enters damping by the lesser air inlet of area no longer because being squeezed by constraint
Hole is simultaneously released rapidly by the biggish upper opening of area or under shed, to reduce damping force.Simultaneously as damping hole
Side opening area it is smaller, make polar plate area loss will not be excessive, electrostatic force will not be substantially reduced, so that using the pole plate knot
The electro-static driving mechanism of structure can obtain biggish electrostatic force/damping force ratio, can effectively improve the dynamic characteristic of system simultaneously
The background noise of reduction system.
For example, when the area of the side opening of the damping hole accounts for the 10% of its place electrode plate structure side gross area, resistance
Buddhist nun's power can reduce 40% or so (for damping hole shape situation as shown in Figure 2, be changed to other shapes this numerical value and have floating,
Range is between 30%~50%), electrostatic force reduces 10%, it is assumed that electrostatic force/damping force ratio isDescribed in then increasing
After damping hole, new electrostatic force/damping force ratio isIt can be seen that can be by electrostatic force/damping force
Ratio improve 1.5 times.
As an example, the profile of the upper opening 1012 or under shed 1013 is surrounded by least three sections of straight lines.Such as Fig. 7 and figure
Shown in 8, the shape for being respectively indicated as the upper opening or under shed is T-type or trapezoidal schematic diagram.Certainly, the upper opening or
The profile of under shed can also be by least one section of straight line and at least one section of camber line surrounds.As shown in figure 9, be shown as the upper opening or
The schematic diagram that under shed is surrounded by one section of straight line and one section of circular arc.
Certainly, in other embodiments, the upper opening 1012 or under shed 1013 can be also other shapes, as long as meeting
The area of the upper opening 1012 or the area of under shed 1013 are greater than the area of the side opening 1011, herein should not mistake
Divide and limits the scope of the invention.
As shown in Figure 10, in another embodiment, the electrode plate structure 1 another side opposite with the side also is provided with
The damping hole 101.The electrode plate structure 1 that opposite two sides all have the damping hole 101 is suitable for its two sides and all has phase
To the situation of moving component.
Embodiment two
The present invention also provides a kind of production methods of electrode plate structure, include the following steps:
As shown in figure 11, it executes step S1: a substrate 201 being provided, etches curved cavity 203 in the substrate 201,
And an insulating layer 202 is formed on 203 surface of curved cavity.
Specifically, the substrate 201 includes but is not limited to the conventional semiconductor materials such as Si, Ge, SiGe.The insulating layer
202 include but is not limited to the compound-materials such as silica, silicon nitride.In the present embodiment, the substrate 201 by taking Si substrate as an example,
The insulating layer 202 is by taking silica as an example.
The curved cavity 203 can be used dry or wet etch and obtain.The effect of the curved cavity 203 be subsequent
It forms hanging electrode plate structure and one Serpentine Gallery Pavilion is provided, shape is unrestricted.
As shown in figure 12, it executes step S2: a structure piece 204 is provided, by the structure piece 204 and 201 key of substrate
It closes, closes the curved cavity 203.
Specifically, the structure piece 204 includes but is not limited to the conventional semiconductor materials such as Si, Ge, SiGe.The present embodiment
In, the structure piece 204 preferably uses Si structure piece, is bonded by Si-Si bonding process with the substrate 201.
As shown in figure 13, step S3 is executed: thickness needed for the structure piece 204 is thinned to production electrode plate structure.
Specifically, the structure piece 204 can be thinned by grinding, wet etching or chemically mechanical polishing.
As shown in figure 14, it executes step S4: etching the structure piece 204, obtain pole plate above the curved cavity 203
Structure 1.
It is preparatory due to having below electrode plate structure 1 by structure piece 204 described in dry etching figure in the present embodiment
The curved cavity 203 etched, therefore while etched electrode plate structure, also achieve the release of electrode plate structure 1.
As shown in Figures 2 and 3, the one side of the electrode plate structure 1, which is equipped with above and below at least one, runs through the electrode plate structure 1
Damping hole 101, wherein the damping hole 101 is in the side of the electrode plate structure, the opening point of the upper surface and the lower surface
Not Wei side opening 1011, upper opening 1012 and under shed 1013, and the face of the area of the upper opening 1012 or under shed 1013
Product is greater than the area of the side opening 1011.In another embodiment, as shown in Figure 10, the electrode plate structure and the side phase
Pair another side also be provided with the damping hole 101.
For the production method of electrode plate structure of the invention using mature semiconductor technology, simple process is easy to implement.Together
When, due to cleverly designing, so that damping hole can also effectively reduce damping force through electrode plate structure without horizontal, meanwhile, damping
The lesser lateral opening hole in hole will not be substantially reduced pole plate lateral area.
Embodiment three
The present invention also provides a kind of electro-static driving mechanisms using electrode plate structure described in a kind of any one of embodiment.
Specifically, the electro-static driving mechanism includes movable electrode and fixed electrode, the movable electrode and fixed electrode
Both plate electrode can be used, interdigital electrode can also be used.
As an example, the movable electrode performs relative motion in the same plane with the fixed electrode, and described movable
At least one in electrode and the fixed electrode uses the electrode plate structure, it can only movable electrode is using of the invention
Electrode plate structure, or only fixed electrode use electrode plate structure of the invention, can also the movable electrode and fixed electrode it is equal
Using electrode plate structure of the invention.
As an example, as shown in figure 15, being shown as a kind of electro-static driving mechanism 3 using interdigital electrode, interdigital electrode
It is interdigital using electrode plate structure of the invention.As shown, the electro-static driving mechanism 3 includes that movable interdigital 301, fixation is interdigital
302, mass block 303, supporting beam 304 and anchor point 305, wherein the mass block 303 is formed in what a pair was fixed by anchor point 305
Between supporting beam, described movable interdigital 301 are distributed in the two sides of the mass block 303, and the multiple fixations interdigital 302 are by anchor
Point is supported, and is alternately distributed with described movable interdigital 301.
In the present embodiment, described movable interdigital 301, fixed interdigital 302 use the electrode plate structure, can utmostly subtract
Small damping force.
The above is only examples, and in other embodiments, electrode plate structure of the invention can also be applied to other types of electrostatic
Driving structure.In addition, although electrode plate structure of the invention is especially suitable for movable member in face, for movable member outside face,
Electrode plate structure of the present invention can also be used, should not excessively limit the scope of the invention herein.
In conclusion damping hole runs through electrode plate structure up and down, and has in electrode plate structure side wall in electrode plate structure of the invention
There is side opening, and the area of the area of the upper opening of the damping hole or under shed is greater than the area of the side opening.This resistance
Buddhist nun hole can prepare easily with state of the art, meanwhile, using the electrode plate structure of this damping hole as movable in face
When component, the side opening can be used as air inlet, the upper opening or under shed as exhaust outlet, when movable member occurs relatively
When movement, air between two movable members no longer because being squeezed by constraint, but pass through area it is lesser into
Port enters damping hole and is released rapidly by the biggish upper opening of area or under shed, to reduce damping force.Together
When, since the side opening area of damping hole is smaller, makes polar plate area loss will not be excessive, electrostatic force will not be substantially reduced, so that
Biggish electrostatic force/damping force ratio can be obtained using the electro-static driving mechanism of the electrode plate structure, can effectively improve and be
The dynamic characteristic of system and the background noise for reducing system.So the present invention effectively overcome various shortcoming in the prior art and
Has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (12)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510844166.6A CN106800270B (en) | 2015-11-26 | 2015-11-26 | Plate structure, electrostatic drive structure using the same, and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510844166.6A CN106800270B (en) | 2015-11-26 | 2015-11-26 | Plate structure, electrostatic drive structure using the same, and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106800270A CN106800270A (en) | 2017-06-06 |
| CN106800270B true CN106800270B (en) | 2019-04-30 |
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| CN201510844166.6A Expired - Fee Related CN106800270B (en) | 2015-11-26 | 2015-11-26 | Plate structure, electrostatic drive structure using the same, and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4063316A1 (en) * | 2021-03-25 | 2022-09-28 | Murata Manufacturing Co., Ltd. | Channel for decreasing damping asymmetry |
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| CN101368825A (en) * | 2008-09-25 | 2009-02-18 | 中国人民解放军国防科学技术大学 | A kind of angular vibrating silicon micro gyroscope and its manufacturing method |
| CN201605163U (en) * | 2010-02-09 | 2010-10-13 | 杭州电子科技大学 | A Large Capacitance Micro-Inertial Sensor with Comb-shaped Damping Hole |
| EP2582156A2 (en) * | 2011-10-11 | 2013-04-17 | Infineon Technologies AG | Electrostatic loudspeaker with membrane performing out-of-plane displacement |
| CN103364589A (en) * | 2012-04-06 | 2013-10-23 | 精工爱普生株式会社 | Physical quantity sensor and electronic apparatus |
| CN103943420A (en) * | 2014-04-15 | 2014-07-23 | 清华大学 | MEMS relay, cantilever beam switches and forming method of cantilever beam switches |
-
2015
- 2015-11-26 CN CN201510844166.6A patent/CN106800270B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101368825A (en) * | 2008-09-25 | 2009-02-18 | 中国人民解放军国防科学技术大学 | A kind of angular vibrating silicon micro gyroscope and its manufacturing method |
| CN201605163U (en) * | 2010-02-09 | 2010-10-13 | 杭州电子科技大学 | A Large Capacitance Micro-Inertial Sensor with Comb-shaped Damping Hole |
| EP2582156A2 (en) * | 2011-10-11 | 2013-04-17 | Infineon Technologies AG | Electrostatic loudspeaker with membrane performing out-of-plane displacement |
| CN103364589A (en) * | 2012-04-06 | 2013-10-23 | 精工爱普生株式会社 | Physical quantity sensor and electronic apparatus |
| CN103943420A (en) * | 2014-04-15 | 2014-07-23 | 清华大学 | MEMS relay, cantilever beam switches and forming method of cantilever beam switches |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4063316A1 (en) * | 2021-03-25 | 2022-09-28 | Murata Manufacturing Co., Ltd. | Channel for decreasing damping asymmetry |
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| Publication number | Publication date |
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| CN106800270A (en) | 2017-06-06 |
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