CN106787683A - A kind of self-adaptive current voltage conversion circuit - Google Patents
A kind of self-adaptive current voltage conversion circuit Download PDFInfo
- Publication number
- CN106787683A CN106787683A CN201611050506.9A CN201611050506A CN106787683A CN 106787683 A CN106787683 A CN 106787683A CN 201611050506 A CN201611050506 A CN 201611050506A CN 106787683 A CN106787683 A CN 106787683A
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- Prior art keywords
- resistance
- self
- voltage conversion
- conversion circuit
- current voltage
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The invention discloses a kind of self-adaptive current voltage conversion circuit, it is provided with multiple resistant series, and R1 R2 Rn R (n+1), each resistance connects a metal-oxide-semiconductor respectively, using the on state characteristic of metal-oxide-semiconductor threshold voltage, make it have the function of automatic switch, when current signal is stronger, corresponding metal-oxide-semiconductor conducting, its resistive short for being connected, all-in resistance reduces, it is to avoid saturation distortion occurs in subordinate's amplifier；When current signal is weaker, corresponding metal-oxide-semiconductor disconnects, its resistance access circuit for being connected, all-in resistance increase, it is ensured that output voltage signal is enough big；The drawbacks of present invention can overcome traditional circuit, realizes self-adaptive current voltage conversion, and current signal is at times strong and at other times weak also to make output voltage stabilization within the specific limits.
Description
Technical field
The present invention relates to current/voltage-converted technical field, more particularly to a kind of self-adaptive current voltage conversion circuit.
Background technology
In nature, nearly all amount that can represent information is all analog quantity, in the signal processing, it is necessary to carry out signal
Conversion, converts analog signals into data signal or the amount beneficial to subsequent treatment, and such as pressure sensor is exactly to turn pressure
Electric signal is turned to, photodiode is exactly that optical signal is converted into electric signal, and camera is exactly to convert image information into numeral
Array etc. is just.
With the development of science and technology microelectronic component is increasingly paid close attention to by people, each class of electronic devices is prevalent in
In.Such as, wearable device popular at present, exactly gathers the faint sign of inside of human body, then by algorithm to signal
Digitization is carried out, and internal components pursuit is low-power consumption, super low-power consumption etc. is so accomplished by faint sign to carry out
Amplify., it is necessary to the amount of simulation arrives the conversion of electric signal before signal amplification is carried out, change-over circuit is to carry out signal transacting
Cornerstone.It is at times strong and at other times weak but small-signal is in itself and unstable, this to circuit design this results in certain difficulty, how
Design one is simple and efficient adaptive change-over circuit, be many designers it is urgently to be resolved hurrily.
By taking photoelectric switching circuit as an example, existing common photoelectric switching circuit as shown in figure 1, from outside input optical signal to
Photodiode（Photo-Diode）, according to the intensity of illumination generation photoelectric current Ipd of input, photoelectric current is by electricity for photodiode
Current signal is converted to voltage signal by resistance R, and the size of voltage is V=Vdd-Ipd*R, and the sensitivity of opto-electronic conversion is by resistance R's
Resistance determines that the resistance of R is bigger, and sensitivity is higher.This traditional circuit has Railway Project, if supply voltage Vdd becomes
During change, the output valve of Vout can have a direct impact, next to that the size of the photoelectric current of photodiode generation and optical signal
It is strong and weak consistent, because the value of resistance R is fixed and larger, make the amplitude of oscillation of output voltage signal excessive, then putting by late-class circuit
Greatly, saturation distortion is susceptible to, it is inaccurate that such signal process, then needs special circuit or structure external
Portion's signal is changed, and makes output voltage stabilization within the specific limits, facilitates treatment of the late-class circuit to signal.
The content of the invention
A kind of shortcoming it is an object of the invention to overcome prior art, there is provided self-adaptive current voltage conversion circuit, makes
The voltage signal control that must be exported is within the specific limits, it is to avoid excessive signal causes the saturation distortion of subordinate's circuit amplifier,
Realize adaptation function.
In order to solve the above technical problems, present invention employs following technical measures：Including n+1 resistance R1, R2 ... Rn, R
And n NMOS tube N1, N2 ... Nn (n+1)；The n+1 resistant series, and R1 R2 Rn R (n+1)；The n
NMOS tube connection corresponding with preceding n resistance respectively, the first end of the grid connection correspondence resistance of the NMOS tube, source electrode connection is right
The second end of resistance is answered, drain electrode is connected with supply voltage；The first end of the R1 is connected with the positive pole of DC offset voltage；It is described
The ends of R (n+1) second connection first is loaded, the first load output low current signal；Described R1 first ends and the R (n
+ 1) the second end connects an electric capacity respectively, and the electric capacity is connected with Full differential operational amplifier circuit.
The present invention can also be further perfect by following technical measures：
As a further improvement, also including supply voltage calibration module, its input is connected with supply voltage, output end and institute
State the n drain electrode connection of NMOS tube.
As a further improvement, first load is photodiode.
As a further improvement, first load is pressure sensor.
As a further improvement, the resistance number is 3, the number of the NMOS tube is 2；The grid of the N1 connects
The first end of R1 is connect, source electrode connects second end of R1；The grid of the N2 connects the first end of R2, the second of source electrode connection R2
End.
Also provide and employ another technical measures, including n+1 resistance R1', R2' ... Rn', R (n+1) ' and n PMOS
P1、P2…Pn；The n+1 resistant series, and R1'R2'Rn'R (n+1) '；The n PMOS difference
Connection corresponding with preceding n resistance, the first end of the grid connection correspondence resistance of the PMOS, the of source electrode connection correspondence resistance
Two ends, drain electrode is connected with the positive pole of DC offset voltage；The first end ground connection of the R1'；R (n+1) ' second end connection the
Two loads, the second load output low current signal；The first end of the R1' and the R (n+1) ' second end connect respectively
An electric capacity is connect, the electric capacity is connected with Full differential operational amplifier circuit.
As a further improvement, second load is photodiode.
As a further improvement, second load is pressure sensor.
As a further improvement, the resistance number is 3, the number of the PMOS is 2；The grid of the P1 connects
The first end of R1' is connect, source electrode connects second end of R1'；The grid of the P2 connects the first end of R2', and the of source electrode connection R2'
Two ends.
Compared with prior art, the present invention has advantages below：It is provided with multiple resistant series, and R1 R2
Rn R (n+1), each resistance connects a metal-oxide-semiconductor respectively, using the on state characteristic of metal-oxide-semiconductor threshold voltage, makes it have automatic
The function of switch, when current signal is stronger, corresponding metal-oxide-semiconductor conducting, its resistive short for being connected, all-in resistance reduces, keeps away
Exempt from subordinate's amplifier and saturation distortion occur；When current signal is weaker, corresponding metal-oxide-semiconductor is disconnected, and the resistance that it is connected is accessed
Circuit, all-in resistance increase, it is ensured that output voltage signal is enough big；The drawbacks of present invention can overcome traditional circuit, realizes self adaptation electricity
Stream voltage conversion, current signal is at times strong and at other times weak also to make output voltage stabilization within the specific limits.
Brief description of the drawings
Fig. 1 is prior art photoelectric switching circuit figure.
Fig. 2 is self-adaptive current voltage conversion circuit first scheme circuit diagram of the present invention.
Fig. 3 is the wherein embodiment circuit diagram in first scheme.
Fig. 4 is an embodiment circuit diagram in self-adaptive current voltage conversion circuit alternative plan of the present invention.
Specific embodiment
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings.
First scheme
As shown in Figures 2 and 3, n+1 resistance R1, R2 ... Rn, R (n+1) and n NMOS tube N1, N2 ... Nn, wherein n+ are included
1 resistant series, and R1 R2 Rn R (n+1).Wherein in a preferred embodiment, n is 2, that is, be provided with 3 resistance simultaneously
Connection.The breadth length ratio of NMOS tube can be actually needed rationally setting according to circuit, to adjust optimal threshold voltage.2 NMOS tubes
N1, N2 connection corresponding with preceding 2 resistance R1, R2 respectively；The grid of N1 connects the first end of R1, and source electrode connects second end of R1；
The grid of N2 connects the first end of R2, and source electrode connects second end of R2；The drain electrode of N1, N2 is connected with supply voltage.It is preferred that
The drain electrode of N1, N2 can be connected with supply voltage calibration module.The fluctuation that supply voltage calibration module is avoided that supply voltage is set
To the influence that integrated circuit brings so that the output level value that can be stablized.The first end of R1 and a DC offset voltage
Positive pole be connected, be used to provide fixed level for the first node of circuit.
When photoelectric current I is smaller, the gate source voltage of N1, N2 is less than its threshold voltage, i.e. I1*R1<V (GS1)-V (TH) and
I2*R2<V (GS2)-V (TH), NMOS tube N1, N2 cut-off, all photoelectric currents flow through resistance, then introduce the equivalent resistance of circuit
R'=R1+R2+R3, Vout=V1-V2, now export larger voltage；When photoelectric current I increases, I1 also increases immediately, increases to N1
Gate source voltage be more than its threshold voltage, i.e. I1*R1>V (GS1)-V (TH), N1 begins to turn on, and R1 is short-circuit by N1, due to R1
R2, now N1 still end, introduce circuit equivalent resistance R'=R2+R3, with the increase of photoelectric current I, the amplification of output voltage is bright
It is aobvious to slow down；When photoelectric current I continues to increase, I2 also increases immediately, and the gate source voltage for increasing to N2 is more than its threshold voltage, i.e. I2*
R2>V (GS2)-V (TH), N2 begins to turn on, and due to R1 R2 R3, now N1, N2 are in saturation conduction state, R1, R2 quilt
Short circuit, introduces the equivalent resistance R'=R3 of circuit, and with the increase of photoelectric current I, the amplification of output voltage linearly increases, slope
It is the resistance of equivalent resistance, now the amplification of output voltage is very slow.The design of the circuit, can make output voltage stabilization one
Determine in scope, realize self-adaptive current voltage conversion.The gradient of the current signal change of input changes with the change of series, n
Bigger, series is more, and the process of quantization is more accurate so that output voltage can more accurately react the variable quantity of input current.
The first end of R1 and the ends of R3 second connect an electric capacity respectively, and electric capacity is connected with Full differential operational amplifier circuit.If
On the one hand put electric capacity can effectively completely cut off the dc noise that higher level's circuit brings, and on the other hand can be constituted with the resistance of higher level's circuit low
Bandpass filter, and high-pass filter is constituted with the resistance Rf of subordinate electronic feedback branch road, bandpass filter is integrally formed, so as to filter
Noise in addition to effective signal area, the centre frequency of wave filter is determined by resistance and electric capacity.Signal after electric capacity by entering
Method and the treatment of subordinate are carried out in Full differential operational amplifier circuit.
The ends of R (n+1) second connection first is loaded, and the first load can be any sensor or detector, as long as output is micro-
Weak current signal be applicable.In the present embodiment, the first load is photodiode.Infrared remote control letter is carried out in photodiode
During number detection, the present invention can be according to the strong and weak equivalent resistance that accesses circuit of effectively changing of the infrared signal that receives so that defeated
Go out voltage control within the specific limits, be prevented effectively from the situation of loss of data.
Alternative plan
As shown in figure 4, including n+1 resistance R1', R2' ... Rn', R (n+1) ' and n PMOS P1, P2 ... Pn, wherein n+1
Individual resistant series, and R1'R2'Rn'R (n+1) '.Wherein in a preferred embodiment, n is 2, that is, be provided with 3
Resistor coupled in parallel.The breadth length ratio of PMOS can be actually needed rationally setting according to circuit, to adjust optimal threshold voltage.2
The connection corresponding with preceding 2 resistance R1', R2' respectively of PMOS P1, P2；The grid of P1 connects the first end of R1', source electrode connection R1'
The second end；The grid of P2 connects the first end of R2', and source electrode connects second end of R2'；The drain electrode of P1, P2 and a bias voltage
Positive pole connection, for providing fixed level.The first end ground connection of R1'.
When photoelectric current I is smaller, the gate source voltage of P1, P2 is less than its threshold voltage, i.e. I1'*R1'<Shu V (GS1) '-V
(TH) ' Shu and I2'*R2'<Shu V (GS2) '-V (TH) ' Shu, PMOS P1, P2 cut-off, all photoelectric currents flow through resistance, then draw
Enter equivalent resistance R''=R1'+R2'+R3', the Vout'=V1-V2 of circuit, now export larger voltage；When photoelectric current I increases,
I1' also increases immediately, and the gate source voltage for increasing to P1 is more than its threshold voltage, i.e. I1'*R1'>Shu V (GS1) '-V (TH) ' Shu, P1
Begin to turn on, by P1 short circuits, due to R1'R2', now P2 still ends R1', introduces the equivalent resistance R''=R2'+ of circuit
R3', with the increase of photoelectric current I, the amplification of output voltage substantially slows down；When photoelectric current I continues to increase, I2' also increases immediately,
The gate source voltage for increasing to P2 is more than its threshold voltage, i.e. I2'*R2'>Shu V (GS2) '-V (TH) ' Shu, P2 begin to turn on, due to
R1'R2'R3', now P1, P2 be in saturation conduction state, R1', R2' are shorted, introduce circuit equivalent resistance R''
=R3', with the increase of photoelectric current I, the amplification of output voltage linearly increases, and slope is the resistance of equivalent resistance, is now exported
The amplification of voltage is very slow.
Other non-description technique features are identical with first scheme in alternative plan, are not repeated.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the invention, it is all in essence of the invention
Within god and principle, any modification, equivalent substitution and improvements done etc. should be included within the scope of protection of the invention.
Claims (9)
1. a kind of self-adaptive current voltage conversion circuit, it is characterised in that：Including n+1 resistance R1, R2 ... Rn, R (n+1) and n
Individual NMOS tube N1, N2 ... Nn；The n+1 resistant series, and R1 R2 Rn R (n+1)；The n NMOS tube difference
Connection corresponding with preceding n resistance, the first end of the grid connection correspondence resistance of the NMOS tube, the of source electrode connection correspondence resistance
Two ends, drain electrode is connected with supply voltage；The first end of the R1 is connected with the positive pole of DC offset voltage；The R (n+1) second
End connection first is loaded, the first load output low current signal；Described R1 first ends and the ends of the R (n+1) second
An electric capacity is connected respectively, and the electric capacity is connected with Full differential operational amplifier circuit.
2. self-adaptive current voltage conversion circuit according to claim 1, it is characterised in that：Also include supply voltage school
Quasi-mode block, its input is connected with supply voltage, and output end is connected with the drain electrode of the n NMOS tube.
3. self-adaptive current voltage conversion circuit according to claim 2, it is characterised in that：First load is photoelectricity
Diode.
4. self-adaptive current voltage conversion circuit according to claim 2, it is characterised in that：First load is pressure
Sensor.
5. the self-adaptive current voltage conversion circuit according to claim 3 or 4, it is characterised in that：The resistance number is 3
Individual, the number of the NMOS tube is 2；The grid of the N1 connects the first end of R1, and source electrode connects second end of R1；The N2
Grid connect R2 first end, source electrode connect R2 the second end.
6. a kind of self-adaptive current voltage conversion circuit, it is characterised in that：Including n+1 resistance R1', R2' ... Rn', R (n+1) '
With n PMOS P1, P2 ... Pn；The n+1 resistant series, and R1'R2'Rn'R (n+1) '；The n
PMOS connection corresponding with preceding n resistance respectively, the first end of the grid connection correspondence resistance of the PMOS, source electrode connection is right
The second end of resistance is answered, drain electrode is connected with the positive pole of DC offset voltage；The first end ground connection of the R1'；The R (n+1) '
Two ends connection second is loaded, the second load output low current signal；The first end of the R1' and the R (n+1) '
Two ends connect an electric capacity respectively, and the electric capacity is connected with Full differential operational amplifier circuit.
7. self-adaptive current voltage conversion circuit according to claim 6, it is characterised in that：Second load is photoelectricity
Diode.
8. self-adaptive current voltage conversion circuit according to claim 6, it is characterised in that：Second load is pressure
Sensor.
9. the self-adaptive current voltage conversion circuit according to claim 7 or 8, it is characterised in that：The resistance number is 3
Individual, the number of the PMOS is 2；The grid of the P1 connects the first end of R1', and source electrode connects second end of R1'；It is described
The grid of P2 connects the first end of R2', and source electrode connects second end of R2'.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611050506.9A CN106787683A (en) | 2016-11-25 | 2016-11-25 | A kind of self-adaptive current voltage conversion circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611050506.9A CN106787683A (en) | 2016-11-25 | 2016-11-25 | A kind of self-adaptive current voltage conversion circuit |
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| Publication Number | Publication Date |
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| CN106787683A true CN106787683A (en) | 2017-05-31 |
Family
ID=58910499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611050506.9A Pending CN106787683A (en) | 2016-11-25 | 2016-11-25 | A kind of self-adaptive current voltage conversion circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107979281A (en) * | 2017-12-18 | 2018-05-01 | 上海艾为电子技术股份有限公司 | A kind of input voltage division module and overvoltage protection switch |
| CN109861675A (en) * | 2019-01-09 | 2019-06-07 | 思力科（深圳）电子科技有限公司 | Digital signal burr eliminates circuit |
| CN110487424A (en) * | 2019-08-23 | 2019-11-22 | 中国电子科技集团公司第四十四研究所 | Integrating circuit for graphene near infrared detector |
| WO2023060474A1 (en) * | 2021-10-13 | 2023-04-20 | 华为技术有限公司 | Detection apparatus, shunt circuit and terminal device |
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| CN101029910A (en) * | 2007-03-22 | 2007-09-05 | 华为技术有限公司 | Current inspecting circuit and device |
| CN102571193A (en) * | 2010-12-14 | 2012-07-11 | 无锡华润矽科微电子有限公司 | Infrared receiving circuit input structure |
| CN103558439A (en) * | 2013-10-12 | 2014-02-05 | 华为技术有限公司 | Current detection circuit |
| CN105841809A (en) * | 2016-05-09 | 2016-08-10 | 河海大学常州校区 | Radiation test circuit based on silicon solar battery |
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| CN101029910A (en) * | 2007-03-22 | 2007-09-05 | 华为技术有限公司 | Current inspecting circuit and device |
| CN102571193A (en) * | 2010-12-14 | 2012-07-11 | 无锡华润矽科微电子有限公司 | Infrared receiving circuit input structure |
| CN103558439A (en) * | 2013-10-12 | 2014-02-05 | 华为技术有限公司 | Current detection circuit |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107979281A (en) * | 2017-12-18 | 2018-05-01 | 上海艾为电子技术股份有限公司 | A kind of input voltage division module and overvoltage protection switch |
| CN109861675A (en) * | 2019-01-09 | 2019-06-07 | 思力科（深圳）电子科技有限公司 | Digital signal burr eliminates circuit |
| CN109861675B (en) * | 2019-01-09 | 2023-05-02 | 莫冰 | Digital signal burr eliminating circuit |
| CN110487424A (en) * | 2019-08-23 | 2019-11-22 | 中国电子科技集团公司第四十四研究所 | Integrating circuit for graphene near infrared detector |
| WO2023060474A1 (en) * | 2021-10-13 | 2023-04-20 | 华为技术有限公司 | Detection apparatus, shunt circuit and terminal device |
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