CN106785920B - Mechanically connected semiconductor laser stacked array - Google Patents

Abstract

The invention provides a mechanically connected semiconductor laser stacked array, which is composed of a plurality of semiconductor laser units. The semiconductor laser units are provided with protrusions and grooves, and the protrusions and grooves match each other, so that The protrusions and grooves of adjacent semiconductor laser units are connected in a plug-in manner to form a stacked array structure. The semiconductor laser unit of the present invention is assembled using an interference fit plug-in method, which not only enables lossless disassembly and assembly of the semiconductor laser unit, but also achieves a smaller volume, which is beneficial to product heat dissipation.

Description

A mechanically connected semiconductor laser array

Technical field

The invention relates to a semiconductor laser, specifically a packaging structure of a mechanically connected semiconductor laser stack.

Background technique

Figure 1 shows the packaging structure of an existing high-power semiconductor laser stack: after multiple laser chips 1 and multiple heat-dissipating conductive substrates 2 are bonded into a bar group, they are integrally bonded to the insulating structure 4, and then The module is then bonded to the heat sink; or the laser chip is bonded to the conductive substrate to form a light-emitting unit, and multiple light-emitting units are bonded to the insulating substrate and heat sink in sequence.

In the semiconductor laser stack structure of the above package structure, the laser chip, the conductive substrate, the insulating substrate and the heat sink all use a mutual bonding process. If one chip burns out, the entire stack will fail; and the structure The later maintenance of semiconductor lasers is complicated. In long-term use, the failure of a single chip is difficult to repair and replace separately, which in turn affects the reliability of the entire semiconductor laser.

Contents of the invention

In order to solve the shortcomings of the existing technology, the present invention proposes a mechanically connected semiconductor laser stack array.

The technical solution of the present invention is as follows:

A mechanically connected semiconductor laser stacked array, including a plurality of semiconductor laser units, characterized in that: the semiconductor laser unit is provided with a convex part and a groove part, and the convex part and the groove part match each other so that they match each other. The protrusions and grooves of adjacent semiconductor laser units are connected in a plug-in manner to form a stacked array structure.

The semiconductor laser unit structure is divided into the following two types:

1) The semiconductor laser unit includes a conductive substrate and a laser chip bonded to the conductive substrate; the convex portion and the groove portion are respectively provided on two sides of the conductive substrate, and the convex portion is in contact with the adjacent semiconductor laser unit The groove part of the plug is insulated.

The outer part of the protruding part is wrapped with an insulating sleeve.

2) The semiconductor laser unit includes a conductive substrate, a laser chip bonded to the conductive substrate, and a heat sink block; the conductive substrate is arranged on the heat sink block and is insulated between the conductive substrate and the heat sink block; the aforementioned protrusions The portions and groove portions are respectively provided on the two sides of the heat sink block corresponding to the mounting surface of the conductive substrate, so that the protruding portions and groove portions of the adjacent semiconductor laser unit heat sink blocks are connected in a plug-in manner and form a stack. array structure.

The semiconductor laser unit also includes a positive connecting piece, a negative connecting piece and an insulating buffer block for electrical connection between adjacent semiconductor laser units; the positive connecting piece is bonded to the conductive substrate, or the positive connecting piece is connected to the conductive substrate. The conductive substrate has an integrated structure, and the negative connecting piece is bonded to the laser chip and connected to the positive connecting piece of the adjacent semiconductor laser unit; the insulating buffer block is provided between the negative connecting piece and the conductive lining of the semiconductor laser unit. between the bottoms, and the thickness is greater than the thickness of the laser chip.

The protruding part is a hollow structure and serves as the liquid refrigeration channel of the stacked structure.

The conductive substrate or heat sink block is trapezoidal, so that a plurality of semiconductor laser units are assembled in sequence to form a circular or semicircular array, and the laser beams emitted by the plurality of semiconductor laser units have a common convergence area.

The protruding part is a pin, and the groove part is a pin hole; or the groove part is a dovetail groove, and the protruding part is a structure matching the dovetail groove.

The following is another mechanically connected semiconductor laser stack of the present invention, which includes a plurality of semiconductor laser units installed in a heat sink in a plug-in manner, wherein the semiconductor laser unit includes a conductive substrate and a conductive substrate bonded to a conductive substrate. The laser chip on the substrate; the semiconductor laser unit is provided with a convex portion at the bottom, and the heat sink block is provided with a groove portion that matches the aforementioned convex portion, so that multiple semiconductor laser units are plugged and installed to the heat sink The blocks form a stacked array, and the conductive substrate is insulated from the heat sink blocks.

The heat sink block is made of insulating material, and the aforementioned protruding portion is provided at the bottom of the conductive substrate; or the heat sink block is made of conductive material, and the semiconductor laser unit further includes an insulating structure provided at the bottom of the conductive substrate, and the bottom of the insulating structure is provided with The bulge or the insulating structure itself serves as the bulge.

The plurality of semiconductor laser units are closely connected, and their convex portions form a whole, and the heat sink block is provided with only one groove portion, and the aforementioned convex portion is plugged and installed on the heat sink block as a whole; or the heat sink block The sinker is provided with a number of grooves equal to the number of semiconductor laser units, and the plurality of semiconductor laser units are plugged into the heat sink one by one and tightly connected.

The semiconductor laser unit also includes a positive connecting piece, a negative connecting piece and an insulating buffer block for electrical connection between adjacent semiconductor laser units; the positive connecting piece is bonded to the conductive substrate, or the positive connecting piece is bonded to the conductive substrate. The conductive substrate has an integrated structure, and the negative connecting piece is bonded to the laser chip and connected to the positive connecting piece of the adjacent semiconductor laser unit; the insulating buffer block is provided between the negative connecting piece and the conductive lining of the semiconductor laser unit. between the bottoms, and the thickness is greater than the thickness of the laser chip.

The conductive substrate is provided with second protrusions and second grooves on two sides corresponding to the installation direction of the heat sink block, and the second protrusions and the second grooves match each other so that a plurality of semiconductors When the laser unit is plugged and installed on the heat sink block, the adjacent semiconductor laser units are tightly fixed in the form of plugging, and the second protruding portion is insulated from the second groove portion of the adjacent semiconductor laser unit.

The invention has the following advantages:

1) Semiconductor laser units can achieve independent testing, screening, and aging, which improves the qualification rate after product assembly; adjacent semiconductor laser units are connected through mechanical connection such as plugging, and a single semiconductor laser can be inspected during use and later maintenance. The unit can be disassembled and replaced without causing damage to the laser chip.

2) The plug-in method of the present invention can adopt the form of interference fit or dovetail groove. Specifically, it can adopt the structure of pins and pin holes, which can achieve smaller volume and small gaps, which is beneficial to product heat dissipation.

3) The present invention can be assembled into a semiconductor laser of any length, thereby realizing the assembly of a long-emitting area semiconductor laser with higher flexibility.

Description of the drawings

Figure 1 shows the existing packaging form.

Figures 2 and 3 respectively show the semiconductor laser unit and the corresponding stacked array structure according to Embodiment 1 of the present invention.

4 and 5 are respectively schematic diagrams of the semiconductor laser unit and the corresponding stacked array structure corresponding to Embodiment 2 of the present invention.

FIG. 6 is an exploded view of the structure of the semiconductor laser unit of Embodiment 2.

Figure 7 is a structural diagram of Embodiment 2.

Figure 8 is Embodiment 3 of the present invention.

Figure 9 is a semiconductor laser unit corresponding to Embodiment 4 of the present invention.

Figure 10 is a schematic structural diagram of Embodiment 4 of the present invention.

Figures 11 and 12 are Embodiment 5 and alternatives to Embodiment 5 respectively.

Figures 13 and 14 respectively show the semiconductor laser unit with the optimized structure and the corresponding stacked array structure in Embodiment 5.

Explanation of reference numbers: 1-laser chip, 2-conductive substrate, 3-heat sink block, 4-insulation structure, 5-convex part, 6-groove part, 7-insulating buffer block, 8-negative electrode connecting piece , 9-positive connecting piece, 10-water block, 11-water hole, 12-insulating layer, 13-insulating sleeve, 201-conductive layer of conductive substrate, 202-insulating base of conductive substrate.

Detailed ways

Figures 2 and 3 respectively show Embodiment 1 of the present invention and the semiconductor laser unit corresponding to this embodiment. The semiconductor laser unit in Figure 2 includes a conductive substrate 2, a laser chip 1 bonded to the conductive substrate, and a heat sink block 3; the conductive substrate 2 is disposed on the heat sink block 3, and the conductive substrate 2 and the heat sink block 3 3 are insulated. When the heat sink block is made of conductive material (such as copper, copper tungsten, etc.), an insulation structure 4 is provided between the conductive substrate 2 and the heat sink block 3. Specifically, the conductive substrate 2 is copper tungsten. and other metal materials, the insulating structure 4 is aluminum nitride ceramics or an insulating film covering the bottom of the conductive substrate 2; when the heat sink block is made of insulating materials (such as ceramics), the aforementioned insulating structure 4 can be omitted.

The two sides of the above-mentioned heat sink block 3 (corresponding to the mounting surface for mounting the conductive substrate 2) are respectively provided with a protruding portion 5 and a groove portion 6, and the protruding portion and the groove portion match each other so that they are adjacent to each other. The convex portion and the groove portion of the heat sink block of the semiconductor laser unit are connected in a plug-in manner to form a stacked array structure.

The convex portion and the groove portion of the heat sink block can be specifically pins and pin holes, or dovetail grooves and matching convex portions, which are mechanically connected together in an interference fit manner.

Figures 5 and 4 respectively show Embodiment 2 of the present invention and the semiconductor laser unit corresponding to this embodiment. Embodiment 2 realizes the optimization of the electrical connection structure and performance of Embodiment 1. The semiconductor laser unit in Figure 4 also includes an anode connecting piece 9, a negative electrode connecting piece 8 and an insulating buffer block 7. The anode connecting piece 9 is bonded to the conductive substrate 2; in order to achieve a simpler structure, the anode connecting piece 9 can be The connecting piece 9 and the conductive substrate 2 form an integrated structure. The negative electrode connecting piece 8 is bonded to the laser chip 1 and connected to the positive electrode connecting piece of the adjacent semiconductor laser unit.

The insulating buffer block 7 is thicker than the thickness of the laser chip and is disposed between the negative connecting piece 8 and the conductive substrate 2 of the semiconductor laser unit, or between the negative connecting piece 8 and the insulating structure 4 of the semiconductor laser unit. . After the insulating buffer block 7 is installed and fixed, its installation edge exceeds the edge of the heat sink block 3, so that the adjacent semiconductor laser units are connected in a plug-in manner and exert pressure on the insulating buffer block and elastically deform the insulating buffer block 7 to ensure that the negative electrode The connecting piece 8 is closely connected to the positive connecting piece of the adjacent semiconductor laser unit.

In order to match the shape of the insulating buffer block, the negative electrode connecting piece 8 includes a straight area and a bent area. The straight area corresponds to the bonding area of the laser chip, and the bent area corresponds to the installation area of the insulating buffer block.

It should be noted that the negative electrode connecting piece 8 and the positive electrode connecting piece 9 are both insulated from the heat sink block 3. The specific implementation method is that the negative electrode connecting piece 8 and the positive electrode connecting piece 9 maintain a safe distance from the heat sink block 3, or when the heat sink is heated, The mounting surface of sinker 3 is covered with an insulating film to optimize the insulation effect.

Figure 6 is a structural disassembly view of the semiconductor laser unit in Figure 4. Figure 7 is a structural disassembly view of the second embodiment in Figure 5. In order to improve the heat dissipation efficiency of the semiconductor laser stack, a liquid cooling channel can be provided in the heat sink block. Furthermore, the protruding portion can be configured as a hollow structure to serve as a liquid refrigeration channel. In Figure 7, water passage blocks 10 are provided on both sides of the semiconductor laser stack. The water passage blocks are provided with water passage holes 11 connected to the liquid refrigeration channel for external connection of liquid refrigeration equipment.

The semiconductor laser unit forming a stacked structure can also have a structure that includes a conductive substrate 2 and a laser chip 1 bonded to the conductive substrate. The protruding portion 5 and the groove portion 6 are respectively provided on the conductive substrate. Two sides. Specifically, it includes the following two optional implementations: 1) As shown in Figure 8, the conductive substrate includes an insulating base 202 and a conductive layer 201 disposed on the surface of the insulating base 202. The protruding portion 5 and the groove portion 6 are respectively Disposed on both sides of the insulating base of the conductive substrate, the protruding portion is insulated from the groove portion of the adjacent semiconductor laser unit; the laser chip is bonded to the conductive layer 201 and is connected to the conductive portion of the adjacent semiconductor laser unit. layer connection. 2) The conductive substrate is made of conductive material, specifically copper tungsten, etc. The convex part and the groove part are directly arranged on the two sides of the copper tungsten, and an insulating sleeve is set outside the convex part to realize the connection between the convex part and the adjacent part. For the insulation between the groove parts of the semiconductor laser unit, you can refer to the schematic structures in Figures 13 and 14. At this time, the convex part and the groove part are equivalent to the second convex part and the second groove part in Figure 13. Location.

Figures 9 and 10 respectively show Embodiment 4 of the present invention and the semiconductor laser unit corresponding to this embodiment. The semiconductor laser unit of Embodiment 4 adopts a trapezoidal heat sink block structure, so that after adjacent semiconductor laser units are plugged into each other, a ring-shaped semiconductor laser stack can be obtained, and the laser light emitted by the semiconductor laser units has a common convergence area.

In order to optimize the electrical connection effect of the above-mentioned annular structure, the electrical connection method of Embodiment 4 is specifically as follows: the heat sink block is made of conductive material (specifically copper), and insulation is provided on the side of the heat sink block 3 that is provided with protrusions and grooves. Layer 12, the positive connecting piece 9 extends from the conductive substrate to the insulating layer 12 of the corresponding heat sink block, the negative connecting piece 8 extends from the laser chip 1 to the insulating layer 12 of the corresponding heat sink block, and the adjacent semiconductor laser After the units are plugged and connected with an interference fit, the adjacent heat sink blocks 3 are tightly connected, so that the positive electrode connecting piece and the negative electrode connecting piece of the adjacent semiconductor laser unit are closely connected to achieve electrical connection. When the heat sink block 3 is made of insulating material (such as ceramic), the above-mentioned insulating layer 12 can be omitted.

Embodiment 4 has significant advantages in the application of solid laser pumping: adjacent semiconductor laser units have been connected in a plug-in manner, which facilitates the later replacement of failed semiconductor laser units. The semiconductor laser unit as a side pump unit can also be flexibly selected. numbers to achieve different application conditions.

Figures 12 and 11 show Embodiment 5 of the present invention. A mechanically connected semiconductor laser stack includes a plurality of semiconductor laser units installed in a heat sink 3 in a plug-in manner; wherein the semiconductor laser unit includes a conductive substrate 2, and a laser beam bonded to the conductive substrate Chip 1, the semiconductor laser unit is provided with a convex portion at the bottom, and the heat sink block is provided with a groove portion that matches the aforementioned convex portion, so that multiple semiconductor laser units are plugged and installed on the heat sink block to form a stacked array. .

Figure 11 shows that the heat sink block 3 is provided with a plurality of grooves equal to and matching the number of convex portions of the semiconductor laser units. The semiconductor laser units are plugged and installed on the heat sink block in one-to-one correspondence and are tightly connected. Figure 12 shows that the heat sink block is provided with only one groove portion. Multiple semiconductor laser units in the stacked array module are closely connected, and their insulating substrates form a common convex portion. The aforementioned stacked array module is plugged and installed as a whole on the heat sink. On the sinking block.

It should be noted that the conductive substrate 2 in the semiconductor laser unit is insulated from the heat sink block 3 to ensure the electrical connection between adjacent semiconductor laser units. Specifically, the heat sink block is made of conductive material (specifically copper, etc.), and the semiconductor laser unit also includes an insulating structure provided at the bottom of the conductive substrate. The insulating structure 4 is provided with a protruding portion or the insulating structure itself serves as a protruding portion (Fig. 11 and 12), the insulating structure is aluminum nitride ceramics, etc.; or a heat sink block 3 of insulating material is used, and the convex portion is set at the bottom of the conductive substrate (as shown in Figure 13), or Insert the conductive substrate directly into the matching groove portion of the heat sink block.

In addition, the heat sink block in Embodiment 5 can also adopt an arc-shaped or semi-circular structure, so that after the semiconductor laser unit is installed into the heat sink block 3 in a plug-in manner, a ring-shaped semiconductor laser stacked array is obtained, and the semiconductor laser unit The emitted laser light has a common convergence area.

This embodiment can also be optimized as follows: As shown in Figures 13 and 14, the conductive substrate of the semiconductor laser unit is provided with second protrusions 14 and second grooves on two sides corresponding to the installation direction of the heat sink block. part 15, and the second protruding part 14 and the second groove part 15 match each other, so that when multiple semiconductor laser units are plugged and installed on the heat sink block 3, adjacent semiconductor laser units are tightly fixed in the form of plugging. , and the second protruding portion is insulated from the second groove portion of the adjacent semiconductor laser unit.

The above-mentioned insulation solution is specifically: wrapping an insulating sleeve 13 on the outside of the second protruding part, preferably an elastic insulating sleeve, so that the second protruding part is tightly connected when inserted into the second groove part of the adjacent semiconductor laser.

Claims (13)

1. A mechanically connected semiconductor laser stack comprising a plurality of semiconductor laser units, characterized in that: the semiconductor laser units are provided with protruding portions and groove portions, and the protruding portions and the groove portions are mutually matched, so that the protruding portions and the groove portions of adjacent semiconductor laser units are connected in an interference fit and insertion mode to form an array structure.

2. The mechanically connected semiconductor laser stack of claim 1, wherein: the semiconductor laser unit comprises a conductive substrate and a laser chip bonded with the conductive substrate; the protruding parts and the grooves are respectively arranged on two side surfaces of the conductive substrate, and the protruding parts are insulated from the inserting parts of the grooves of the adjacent semiconductor laser units.

3. A mechanically connected semiconductor laser stack as claimed in claim 2, wherein: the outside of the protruding part is wrapped with an insulating sleeve.

4. The mechanically connected semiconductor laser stack of claim 1, wherein: the semiconductor laser unit comprises a conductive substrate, a laser chip bonded with the conductive substrate and a heat sink block; the conductive substrate is arranged on the heat sink block and is insulated from the heat sink block; the convex parts and the concave grooves are respectively arranged on the two side surfaces of the heat sink block, which correspond to the installation surface of the conductive substrate, so that the convex parts and the concave grooves of the adjacent semiconductor laser unit heat sink blocks are connected in an interference fit and grafting mode and form a stacked array structure.

5. The mechanically linked semiconductor laser array of claim 4, wherein: the semiconductor laser units further comprise positive electrode connecting pieces, negative electrode connecting pieces and insulating buffer blocks, and are used for electric connection between adjacent semiconductor laser units;

the positive electrode connecting sheet is bonded on the conductive substrate, or the positive electrode connecting sheet and the conductive substrate are of an integrated structure, and the negative electrode connecting sheet is bonded on the laser chip and connected with the positive electrode connecting sheet of the adjacent semiconductor laser unit; the insulating buffer block is arranged between the negative electrode connecting sheet and the conductive substrate of the semiconductor laser unit, and the thickness of the insulating buffer block is larger than that of the laser chip.

6. A mechanically linked semiconductor laser stack as claimed in any one of claims 1 to 5, wherein: the protruding part is of a hollow structure and is used as a liquid refrigeration channel of the stacked structure.

7. A mechanically linked semiconductor laser stack as claimed in any one of claims 2 to 5, wherein: the conductive substrate or the heat sink block is trapezoid, so that a plurality of semiconductor laser units are assembled in a mutual inserting mode in sequence to form a circular or semicircular array, and laser beams emitted by the semiconductor laser units have a common convergence area.

8. A mechanically linked semiconductor laser stack as claimed in any one of claims 1 to 5, wherein: the protruding part is a pin, and the groove part is a pin hole; or the groove part is a dovetail groove, and the convex part is a structure matched with the dovetail groove.

9. A mechanically connected semiconductor laser stacked array is characterized in that: the semiconductor laser device comprises a plurality of semiconductor laser units which are arranged in a heat sink block in an interference fit plug-in mode, wherein the semiconductor laser units comprise a conductive substrate and a laser chip bonded on the conductive substrate; the bottom of the semiconductor laser units is provided with a protruding portion, and the heat sink block is provided with a groove portion matched with the protruding portion, so that the semiconductor laser units are in interference fit and are inserted and mounted to the heat sink block to form a stacked array, and the conductive substrate is insulated from the heat sink block.

10. The mechanically linked semiconductor laser stack of claim 9, wherein: the heat sink block is made of insulating materials, and the convex part is arranged at the bottom of the conductive substrate;

or the heat sink block is made of conductive materials, the semiconductor laser unit further comprises an insulating structure arranged at the bottom of the conductive substrate, and a protruding part is arranged at the bottom of the insulating structure or the insulating structure is used as the protruding part.

11. The mechanically linked semiconductor laser stack of claim 10, wherein: the semiconductor laser units are tightly connected, the protruding parts of the semiconductor laser units form a whole, the heat sink block is only provided with one groove part, and the protruding parts are integrally inserted and installed on the heat sink block; or the heat sink block is provided with groove parts with the same number as the semiconductor laser units, and the semiconductor laser units are inserted into the heat sink block one by one and are tightly connected.

12. A mechanically connected semiconductor laser stack according to any of claims 9-11, characterized in that: the semiconductor laser units further comprise positive electrode connecting pieces, negative electrode connecting pieces and insulating buffer blocks, and are used for electric connection between adjacent semiconductor laser units; the positive electrode connecting sheet is bonded on the conductive substrate, or the positive electrode connecting sheet and the conductive substrate are of an integrated structure, and the negative electrode connecting sheet is bonded on the laser chip and connected with the positive electrode connecting sheet of the adjacent semiconductor laser unit; the insulating buffer block is arranged between the negative electrode connecting sheet and the conductive substrate of the semiconductor laser unit, and the thickness of the insulating buffer block is larger than that of the laser chip.

13. The mechanically linked semiconductor laser stack of claim 9, wherein: the two sides of the conductive substrate corresponding to the installation direction of the heat sink block are respectively provided with a second protruding portion and a second groove portion, the second protruding portion and the second groove portion are mutually matched, so that when a plurality of semiconductor laser units are in interference fit and plug-in connection and are installed on the heat sink block, adjacent semiconductor laser units are tightly fixed in an interference fit and plug-in connection mode, and the plug-in connection position of the second protruding portion and the second groove portion of each adjacent semiconductor laser unit is insulated.