CN106784321A - A kind of single-unit perovskite solar cell and its perovskite solar module - Google Patents
A kind of single-unit perovskite solar cell and its perovskite solar module Download PDFInfo
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- CN106784321A CN106784321A CN201611128686.8A CN201611128686A CN106784321A CN 106784321 A CN106784321 A CN 106784321A CN 201611128686 A CN201611128686 A CN 201611128686A CN 106784321 A CN106784321 A CN 106784321A
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- 230000006870 function Effects 0.000 claims description 14
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
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- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052804 chromium Inorganic materials 0.000 claims description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 2
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- 239000011737 fluorine Substances 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052745 lead Inorganic materials 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
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- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/162—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using laser ablation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
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- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The invention provides a kind of single-unit perovskite solar cell and its perovskite solar module, at least one open end of single-unit perovskite solar cell conductive layer has a first slope structure, and the first slope structure has first domatic into 110 170 ° with substrate.The perovskite solar module includes two or more single-unit perovskite solar cell；Each single-unit perovskite solar cell is placed on one block of overall base material.The open end of the conductive layer of perovskite solar cell is designed as ramp structure by the scheme that the present invention is provided, and the special construction can enable the universalities such as the factor of influence of perovskite solar module, photoelectricity transfer efficient stability significantly improve.
Description
Technical field
The invention belongs to technical field of solar batteries, and in particular to a kind of single-unit perovskite solar cell and its calcium titanium
Ore deposit solar module.
Background technology
Solar energy power generating is a kind of effective means of the energy and environment for solving the problems, such as increasingly serious at present.By number
The development of 10 years, the species of battery develops into all kinds of novel solar batteries from traditional monocrystalline silicon battery, including inorganic partly leads
Body thin film battery, organic semiconductor thin-film battery, dye-sensitized cell and perovskite thin film battery etc..In the dye sensitization sun
The perovskite solar cell grown up on energy cell basis, realizes rising violently for photoelectric transformation efficiency in recent years,
It is chosen as one of " ten big sciences are broken through within 2013 " by Science.Perovskite photoelectric conversion efficiency of the solar battery is in a few years
Efficiency is so rapidly lifted, and this is beyond example, to have caused both at home and abroad in solar cell research field
Art circle and industrial quarters extensive concern and interest.
This novel solar battery includes electrically conducting transparent substrate (conductive layer is deposited in transparent substrates), in the conductive substrates
The photoproduction electric unit of upper formation is (for example, the photoproduction electricity formed by electron transfer layer, perovskite photoelectric conversion layer and hole transmission layer
Unit), and to electrode layer.Perovskite solar cell can be divided into formal and trans two kinds, and formal solar cell is basic
Structure is that FTO/ electron transfer layers (such as titanium dioxide)// metal electrode is (such as perovskite/hole transmission layer (such as Spiro-MeTAD)
Au)；Transoid perovskite battery basic structure is ITO or FTO/ hole transmission layers (such as PEDOT:PSS)/perovskite/electric transmission
Layer (such as PCBM)/metal electrode (such as Ag).
Compared to other solar cells, as the hybrid inorganic-organic perovskite of photoelectric conversion layer there is big light to inhale
Coefficient, carrier mobility high and the low feature of valence band are received, is a kind of very good light absorbing material., Japan in 2006
Miyasaka seminars report CH first3NH3PbX3Type perovskite is used for solar cell, and photoelectric transformation efficiency is only 3%.
2011, South Korea Park etc. reported out that such battery efficiency is promoted to 6.5%.2013, Britain Snaith etc. by perovskite too
Positive energy battery brings up to 9%, and the at this moment research of perovskite battery causes the highest attention in solar energy research field.2014,
Seok seminars of South Korea are greatly improved efficiency by improving perovskite pattern and regulation perovskite constituent, obtain
Certification effect more than 20%.2015, Han Liyuan etc. was greatly improved the electric conductivity of boundary layer by optimizing boundary layer, enters
And the battery of large area can be prepared, and inorganic boundary layer is employed while improve the stability of device.This is certification first
More than 1cm2Perovskite solar cell device, obtain 15% photoelectric transformation efficiency.
Perovskite solar cell has rapid progress and development in battery efficiency, device architecture and preparation method.But
It is the relatively small (0.2cm of effective area of the perovskite battery of present report2Below) and device stability is poor, therefore
This kind of solar cell industry shoulders heavy responsibilities.At present, as a kind of still more novel solar cell, researcher couple
Research in terms of device stability is concentrated mainly on the aspect of performance for improving material layer, but, it is this that material property is changed
Enter and be usually associated with process complications, and the problem that cost is significantly increased.Therefore, in perovskite area of solar cell, still
Lack the simple and easy to do and lower-cost technological design improved in terms of device stability.
The content of the invention
To solve the above problems, it is an object of the invention to provide a kind of single-unit perovskite solar cell.The battery is adopted
With special structure design so that device stability is improved.
It is a further object of the present invention to provide a kind of perovskite solar energy including above-mentioned single-unit perovskite solar cell
Battery module.
It is yet another object of the invention to provide a kind of continuous in substrate in perovskite solar cell for disconnecting
The cut-off raceway groove of conductive layer.
To reach above-mentioned purpose, the invention provides a kind of single-unit perovskite solar cell, the single-unit perovskite sun
At least one open end of energy battery conductive layer has first slope structure, and the first slope structure has and substrate into 110-
The first of 170 ° is domatic.
For in the prior art to device efficiency and stability in terms of improvement inapplicable industrialized production mostly problem,
The present invention proposes the scheme for improving device efficiency and stability from structure design aspect, and the program employs a kind of by conductive layer
Open end be set to the design of ramp structure.This design will not increase the cost of existing process substantially, can but obtain compared with
Good factor of influence and stability.Applicant is based on the further investigation to perovskite solar battery structure in the prior art, warp
Numerous studies discovery is crossed, battery device stability difference also has material layer in addition to perovskite holds labile problem in itself
Open end easily produces the defects such as excessively thin or local disconnection, therefore, the stability that improve device is more reasonably tied, it is necessary to design
Structure, to reduce the generation of drawbacks described above.Now (Fig. 2 and Fig. 4 is referred to) by taking a kind of structure of battery module in the prior art as an example to say
The reason for bright drawbacks described above is formed.The raceway groove side wall for being used to isolate single battery in the conductive layer of Fig. 2 is rectangular, after this will cause
The material layer of continuous covering easily forms one section of thin layer section in the top half of vertical side wall (can produce hole even disconnected when serious
Open)；For the material layer prepared especially for evaporation and sputtering technology, this phenomenon is then clearly.It is being deposited with and is sputtering
In technique, material layer is that progressively superposition is formed, and is deposited with and the material that sputters carries out attachment on the side wall of perpendicular type and is
It is more difficult, this allow for material layer the top half (near perpendicular corners) of vertical side wall deposit it is less, can not can keep away
One section of thin layer section of the formation exempted from.Due to the presence of thin layer section, the layer material easily disconnects herein, and material layer is excessively thin or disconnected
Meeting influences the function of the layer material (especially for the material layer for also needing to undertake cut-off effect, to considerably increase upper and lower two
The contact probability of layer, easily forms charge recombination), seriously reduce the factor of influence and stability of device.Based on to above-mentioned original
The heightened awareness of cause, the present invention proposes the design (referring to Fig. 1 and Fig. 3) that the section beginning of conductive layer is set to ramp structure,
Allow that the material for being deposited with and sputtering smoothly adheres on inclined side wall, and the material layer for being formed at first on the electrically conductive
Also this slope trend that can postpone is grown, and the material layer of subsequent deposition is likely to continue this slope trend, it is seen then that be only
The problem for producing thin layer section can just be greatly reduced by the ramp structure of conductive layer, so that perovskite solar cell
The performances such as the component influences factor, stability, photoelectricity transfer efficient are significantly improved.And, various forms of the prior art
Perovskite solar cell in conductive layer disconnection section substantially can using the present invention provide ramp structure design, therefore,
The program have be widely applied very much scope.
In the scheme that the present invention is provided, the ramp structure of conductive layer can be obtained by conventional dry etching or wet etch methods
, therefore, process costs are not increased substantially.In a kind of preferred embodiment that the present invention is provided, using laser-induced thermal etching legal system
Standby ramp structure.
In the scheme that the present invention is provided, can by the first of ramp structure the domatic angle for being set to be in 110-170 ° with substrate
Battery device stability aspect is preferably improved with obtaining；On this basis, angle can be preferably 120-160 °, further
Preferably 130-155 °, more elect 140-150 ° as.
In above-mentioned single-unit perovskite solar cell, it is preferable that described first is domatic for plane domatic or stepped
It is domatic.It is further preferred that it is described it is stepped it is domatic be made up of some step units, the corner angle of the step unit is more than
90°.When first it is domatic with stairstepping when, by the reasonable design to shoulder height (for example, making the highly small of step unit
In the minimum altitude of the easy lodgment of material), the formation of thin layer can be avoided, this structure is applicable not only to be deposited with, sputters preparation
The technique of material layer, but also suitable for techniques such as spraying, spin coatings, the material layer of liquid can form stagnant on stepped ramp type is domatic
Stay, so as to prepare the continuous material layer with the first slope structure.
In above-mentioned single-unit perovskite solar cell, it is preferable that the single-unit perovskite solar cell includes substrate, leads
Electric layer, to electrode, and located at the conductive layer and between electrode be used for realize electric transmission, light absorbs and hole transport work(
The photoproduction electric unit of energy；The photoproduction electric unit is made up of one or more layers functional material.The preparation technology of layers of material can be adopted
With conventional method of the prior art (spraying, spin coating, magnetron sputtering or vacuum evaporation etc.), the selection of specific material and thickness
It is isoparametric to refer to scheme of the prior art.
In above-mentioned single-unit perovskite solar cell, it is preferable that the photoproduction electric unit is made up of three layer function materials,
Concrete structure is：Perovskite light absorbing zone is intermediate layer, and electron transfer layer and hole transmission layer are placed in perovskite light absorbing zone
Both sides.
In above-mentioned single-unit perovskite solar cell, it is preferable that the substrate, conductive layer, to electrode or functional material
Between be provided with auxiliary layer, the auxiliary layer is used to improve intensity, flatness, cementability or the light transmittance of corresponding layer material.
In the above-mentioned single-unit perovskite solar cell, it is preferable that the conductive layer is selected from indium tin oxide layer, adulterated al
The stannic oxide layer of zinc oxide film or doping fluorine.
In above-mentioned single-unit perovskite solar cell, it is preferable that the material of the substrate includes glass, metal, ceramics
Or high temperature resistant organic polymer.
In above-mentioned single-unit perovskite solar cell, it is preferable that the electron transfer layer is selected from inorganic electronic and transmits material
The combination of one or more in material or Organic Electron Transport Material；Wherein, the inorganic electronic transmission material includes TiO2、
ZnO or SnO2；The Organic Electron Transport Material includes PCBM.
In above-mentioned single-unit perovskite solar cell, it is preferable that the hole transmission layer is selected from inorganic hole and transmits material
The combination of one or more in material or organic hole transport material；Wherein, the inorganic hole transporter include NiO,
Cu2O or MoO3；The organic hole transport material includes Spiro-OMeTAD, PEDOT:PSS or PTAA.
In above-mentioned single-unit perovskite solar cell, it is preferable that comprising a kind of or several in the perovskite light absorbing zone
Plant perovskite material ABX3, A is NH=CHNH3、CH3NH3Or Cs；B is Pb or Sn；X is I, Cl or Br.
In above-mentioned single-unit perovskite solar cell, it is preferable that it is described to electrode be metal electrode or non-metal electrode,
The metal electrode includes the combination of one or more in Al, Ag, Au, Mo and Cr；The non-metal electrode includes carbon electrode.
In above-mentioned single-unit perovskite solar cell, it is preferable that in the functional material that the described first domatic top is formed
One or more layers in layer, the first slope to be formed with taking advantage of a situation section (due to being the covering function material layer on oblique angle is domatic, because
This, whether the bottom surface of function material layer this section is also inclined plane shape, but for top surface also there is inclined plane shape not to be defined；It is preferred that
Situation be top surface and bottom surface all have inclined plane shape)；It is further preferred that the electron transfer layer, perovskite light absorbing zone and
Hole transmission layer has the first slope to be formed section of taking advantage of a situation；It is highly preferred that being formed above the slope section of the function material layer
To electrode layer, the first slope to be formed with taking advantage of a situation section.
In above-mentioned single-unit perovskite solar cell, the design structure of the conductive layer open end provided according to the present invention
Theory, can also be set to ramp structure by the open end of function material layer, this be beneficial to processability it is good to electrode
Layer, so as to further provide for the stability of device.Preferably, the open end of the function material layer has the second ramp structure；
Second ramp structure has with substrate into second domatic into 110-170 °；Preferably 120-160；More preferably
130-155°；More preferably 140-150 °.
Present invention also offers a kind of perovskite solar module (solar pond component), it is included in two or more
State single-unit perovskite solar cell；Each single-unit perovskite solar cell is placed on one block of overall base material.Due to
The perovskite solar module comprising some single-unit perovskite solar cells can be prepared in one piece of overall substrate, incite somebody to action this
The isolation channel design that the ramp structure of the conductive layer open end for providing is applied between single battery is invented, device can be obtained
Stability perovskite solar module higher.Correspondingly, in perovskite solar module function material layer or
Disconnection section to electrode layer may be designed in ramp structure, further to improve device stability and factor of influence.In this hair
In a kind of preferred embodiment of bright offer, function material layer in the perovskite solar module or electrode layer is broken
Opening section has a first slope structure, and the first slope structure has first domatic into 110-170 ° with substrate；Preferably
120-160；More preferably 130-155 °；More preferably 140-150 °.
In above-mentioned perovskite solar module, it is preferable that be between adjacent single-unit perovskite solar cell
It is connected in series；It is further preferred that the concrete mode that is connected in series is：Previous single-unit perovskite solar cell it is right
Electrode layer and the latter conductive layer UNICOM of single-unit perovskite solar cell.It is highly preferred that what is be connected with to electrode layer leads
The section beginning of electric layer has first slope structure；The steady of former and later two single-unit perovskite solar cells connection can so be improved
It is qualitative, so as to further improve the device stability of perovskite solar module.
In a kind of preferred embodiment that the present invention is provided, perovskite solar module includes：Electrically conducting transparent glass
Glass, the first semiconductor layer, the second semiconductor layer, the 3rd semiconductor layer and to electrode layer；Transparent conducting glass (FTO, ITO, AZO
Deng) by dry etching or wet etching conductive layer, each single-unit perovskite solar cell conductive substrate is obtained, wherein each single-unit calcium
Titanium ore solar cell is separated by the raceway groove for etching；Transparent conducting glass and transparent the first semiconductor layer composition perovskite sun
The optoelectronic pole of energy battery；First semiconductor layer (electron transfer layer or hole transmission layer) covers above-mentioned conductive substrates, and with height
Transparency；Second semiconductor layer (perovskite light absorbing zone) covers above-mentioned first semiconductor layer；3rd semiconductor layer is (when first
When semiconductor layer is electron transfer layer, the 3rd semiconductor layer is hole transmission layer；When the first semiconductor layer is hole transmission layer,
3rd semiconductor layer is electron transfer layer) cover above-mentioned second semiconductor layer；Etch channels in transparent conducting glass substrate
Two sides side wall is that oblique angle is set, respectively with bottom surface into 110-170 ° of angle.The specific system of the perovskite solar module
Standby technique is comprised the following steps：(1) by methods such as dry etching or wet etchings, the base conductive layer of electro-conductive glass is etched, carries out bottom
Portion's single battery is dielectrically separated from, and etched width is more than 100nm, and thickness is 50-500nm, the base conductive layer side surface of etching with
Substrate angle is 110-170 ° (forming the slope beneficial to deposition)；(2) by spraying, spin coating, magnetron sputtering or vacuum evaporation
The first semiconductor layer is prepared etc. method, thickness is 10nm-200nm；(3) by method systems such as spraying, spin coating or vacuum evaporations
Standby second semiconductor layer, thickness is 50nm-1000nm；(4) the 3rd half is prepared by methods such as spraying, spin coating or vacuum evaporations
Conductor layer, thickness is 10nm-500nm；(5) by methods such as dry etching or wet etchings, the first semiconductor layer of etching, the second semiconductor
Layer and the 3rd semiconductor layer；(6) prepared to electrode layer by methods such as spraying, spin coating or vacuum evaporations, thickness is 10nm-
1000nm；(7) by methods such as dry etching or wet etchings, etched electrodes layer, etched width is 1um-500um.
The present invention separately provides a kind of for disconnecting the continuous conductive layer in perovskite solar cell in substrate
Cut-off raceway groove, the cut-off raceway groove includes the bottom surface of substrate material and the two sides side wall of conductive layer material, wherein, at least one side side
Wall is in 110-170 ° with bottom surface；Preferably 120-160 °；More preferably 130-155 °；More preferably 140-150 °.
It is above-mentioned for disconnecting perovskite solar cell in continuous conductive layer in the substrate cut-off raceway groove in, it is excellent
Selection of land, the width of the bottom surface is at least above 100nm (Breadth Maximum can carry out conventional arrangement according to the actual requirement of battery), side
The vertical height 50-500nm of wall.
It is above-mentioned for disconnecting perovskite solar cell in continuous conductive layer in the substrate cut-off raceway groove in, it is excellent
Selection of land, the side wall has plane domatic or stepped domatic；It is further preferred that described stepped domatic by some steps
Unit is constituted, and the corner angle of the step unit is more than 90 °.
Brief description of the drawings
Fig. 1 is the cut-off raceway groove schematic diagram in perovskite solar module in embodiment 1 with ramp structure；
Fig. 2 is the cut-off raceway groove schematic diagram in perovskite solar module in comparative example 1 with right-angle structure；
Fig. 3 is the preparation flow schematic diagram of perovskite solar module in embodiment 1；
Fig. 4 is the preparation flow schematic diagram of perovskite solar module in comparative example 1.
Specific embodiment
In order to be more clearly understood to technical characteristic of the invention, purpose and beneficial effect, now to skill of the invention
Art scheme carry out it is described further below, but it is not intended that to it is of the invention can practical range restriction.
Embodiment 1
A kind of perovskite solar module is present embodiments provided, is disconnected in perovskite solar module substrate
The side wall of the cut-off raceway groove of continuous conductive layer has ramp structure (cut-off channel structure is as shown in Figure 1), and the ramp structure has
Domatic into 135 ° with substrate, specific preparation process (preparation flow is as shown in Figure 3) includes：
(1) raceway groove of single battery is isolated in laser ablation perovskite solar module, specially：
Transparent conducting glass (having deposited conductive layer in clear glass substrate) is positioned among fixture, adjustment is conductive
Glass is 135 ° with the angle of projection laser, etching position and parameter is set by control software, then according to setup parameter pair
Conductive layer on electro-conductive glass is performed etching (raceway groove after etching is open shape)；Etching parameters are specially power
2000mW, speed 20mm/s, frequency 20000Hz, etching width are 100 μm；
(2) made successively by spraying or evaporation or the method for sputtering or silk-screen printing in above-mentioned electrically conducting transparent substrate
Standby first semiconductor layer (electron transfer layer), the second semiconductor layer (perovskite light-absorption layer) and the 3rd semiconductor layer (hole transport
Layer), specially：Bottom electron transfer layer is TiO2Layer (thickness is 20nm compacted zones and 150nm porous layers), perovskite light-absorption layer
It is CH3NH3PbI3(thickness is 400nm), Spiro-OMeTAD hole transmission layers, thickness is 200nm；
(3) above-mentioned 3rd semiconductor layer to the first semiconductor layer of laser-induced thermal etching：By transparent conducting glass be positioned over fixture it
In, adjustment electro-conductive glass is 90 ° with the angle of projection laser, and then laser beam focusing performs etching according to setup parameter；
Etching parameters are specially power for 200mW, speed 50mm/s, frequency 50000Hz, and etching width is 200 μm；
(4) on above-mentioned 3rd semiconductor layer, prepared to electrode layer by evaporation coating method, specially：By evaporation coating method
Prepare thickness 100nmAg；
(5) laser-induced thermal etching is above-mentioned to electrode layer：Transparent conducting glass is positioned among fixture, electro-conductive glass is adjusted and is thrown
The angle of laser is penetrated for 90 °, then laser beam focusing is performed etching to electrode surface in Ag according to setup parameter, completed
One piece of preparation of perovskite solar module；Etching parameters are specially power for 400mW, speed 20mm/s, frequency
100000Hz, etching width is 100 μm.
Prepare three pieces of perovskite solar modules respectively according to above-mentioned steps, and be respectively labeled as A1, A2 and A3.
Embodiment 2
A kind of perovskite solar module is present embodiments provided, is disconnected in perovskite solar module substrate
The side wall of the cut-off raceway groove of continuous conductive layer has ramp structure (in 120 °), and specific preparation process includes：
(1) raceway groove of single battery is isolated in laser ablation perovskite solar module, specially：
Transparent conducting glass is positioned among fixture, adjustment electro-conductive glass is 120 ° with the angle of projection laser, is passed through
Control software setting etching position and parameter, then perform etching according to setup parameter；Etching parameters are specially power
3000mW, speed 100mm/s, frequency 30000Hz, etching width are 100 μm；
(2) made successively by spraying or evaporation or the method for sputtering or silk-screen printing in above-mentioned electrically conducting transparent substrate
Standby first semiconductor layer (hole transmission layer), the second semiconductor layer (perovskite light-absorption layer) and the 3rd semiconductor layer (electric transmission
Layer), specially：Bottom hole transmission layer is NiO layer (thickness is 20nm), and perovskite light-absorption layer is CH3NH3PbI3(thickness is
400nm), PCBM electron transfer layers (thickness is 120nm)；
(3) above-mentioned 3rd semiconductor layer to the first semiconductor layer of laser-induced thermal etching：By transparent conducting glass be positioned over fixture it
In, adjustment electro-conductive glass is 90 ° with the angle of projection laser, and then laser beam focusing performs etching according to setup parameter；
Etching parameters are specially power for 200mW, speed 50mm/s, frequency 50000Hz, and etching width is 200 μm；
(4) on above-mentioned 3rd semiconductor layer, it is right to be prepared by spraying or evaporation or the method for sputtering or silk-screen printing
Electrode layer, specially：Thickness 100nmAg is prepared by evaporation coating method；
(5) laser-induced thermal etching is above-mentioned to electrode layer：Transparent conducting glass is positioned among fixture, electro-conductive glass is adjusted and is thrown
The angle of laser is penetrated for 90 °, then laser beam focusing is performed etching to electrode surface in Ag according to setup parameter；Complete
One piece of preparation of perovskite solar module；Etching parameters are specially power for 400mW, speed 20mm/s, frequency
100000Hz, etching width is 100 μm.
Prepare three pieces of perovskite solar modules respectively according to above-mentioned steps, and be respectively labeled as B1, B2 and B3.
Embodiment 3
A kind of perovskite solar module is present embodiments provided, is disconnected in perovskite solar module substrate
The side wall of the cut-off raceway groove of continuous conductive layer has ramp structure (in 150 °), and specific preparation process includes：
(1) raceway groove of single battery is isolated in laser ablation perovskite solar module, specially：
Transparent conducting glass is positioned among fixture, adjustment electro-conductive glass is 150 ° with the angle of projection laser, is passed through
Control software setting etching position and parameter, then perform etching according to setup parameter；Etching parameters are specially power
3000mW, speed 100mm/s, frequency 30000Hz, etching width are 100 μm；
(2) made successively by spraying or evaporation or the method for sputtering or silk-screen printing in above-mentioned electrically conducting transparent substrate
Standby first semiconductor layer (hole transmission layer), the second semiconductor layer (perovskite light-absorption layer) and the 3rd semiconductor layer (electric transmission
Layer), specially：Bottom hole transmission layer is NiO layer (thickness is 20nm), and perovskite light-absorption layer is CH3NH3PbI3(thickness is
400nm), PCBM electron transfer layers (thickness is 120nm)；
(3) above-mentioned 3rd semiconductor layer to the first semiconductor layer of laser-induced thermal etching：By transparent conducting glass be positioned over fixture it
In, adjustment electro-conductive glass is 90 ° with the angle of projection laser, and then laser beam focusing performs etching according to setup parameter；
Etching parameters are specially power for 200mW, speed 50mm/s, frequency 50000Hz, and etching width is 200 μm；
(4) on above-mentioned 3rd semiconductor layer, it is right to be prepared by spraying or evaporation or the method for sputtering or silk-screen printing
Electrode layer, specially：Thickness 100nmAg is prepared by evaporation coating method；
(5) laser-induced thermal etching is above-mentioned to electrode layer：Transparent conducting glass is positioned among fixture, electro-conductive glass is adjusted and is thrown
The angle of laser is penetrated for 90 °, then laser beam focusing is performed etching to electrode surface in Ag according to setup parameter；Complete
One piece of preparation of perovskite solar module；Etching parameters are specially power for 400mW, speed 20mm/s, frequency
100000Hz, etching width is 100 μm.
Prepare three pieces of perovskite solar modules respectively according to above-mentioned steps, and be respectively labeled as C1, C2 and C3.
Embodiment 4
A kind of perovskite solar module is present embodiments provided, is disconnected in perovskite solar module substrate
The side wall of the cut-off raceway groove of continuous conductive layer has ramp structure (in 135 °), and specific preparation process includes：
(1) raceway groove of single battery is isolated in laser ablation perovskite solar module, specially：
Transparent conducting glass is positioned among fixture, adjustment electro-conductive glass is 135 ° with the angle of projection laser, is passed through
Control software setting etching position and parameter, then perform etching according to setup parameter；Etching parameters are specially power
3000mW, speed 100mm/s, frequency 30000Hz, etching width are 100 μm；
(2) made successively by spraying or evaporation or the method for sputtering or silk-screen printing in above-mentioned electrically conducting transparent substrate
Standby first semiconductor layer (hole transmission layer), the second semiconductor layer (perovskite light-absorption layer) and the 3rd semiconductor layer (electric transmission
Layer), specially：Bottom hole transmission layer is NiMgLiO layers (thickness is 20nm), and perovskite light-absorption layer is (NH2CH=
NH2PbI3)0.15(CH3NH3PbI3)0.85(thickness is 400nm)；PCBM/TiO2Electron transfer layer (thickness is 120nm)；
(3) above-mentioned 3rd semiconductor layer to the first semiconductor layer of laser-induced thermal etching：By transparent conducting glass be positioned over fixture it
In, adjustment electro-conductive glass is 90 ° with the angle of projection laser, and laser beam focusing is existed, and is then carved according to setup parameter
Erosion；Etching parameters are specially power for 200mW, speed 50mm/s, frequency 50000Hz, and etching width is 200 μm；
(4) on above-mentioned 3rd semiconductor layer, it is right to be prepared by spraying or evaporation or the method for sputtering or silk-screen printing
Electrode layer, specially：Thickness 100nmAg is prepared by evaporation coating method；
(5) laser-induced thermal etching is above-mentioned to electrode layer：Transparent conducting glass is positioned among fixture, electro-conductive glass is adjusted and is thrown
The angle of laser is penetrated for 90 °, then laser beam focusing is performed etching to electrode surface in Ag according to setup parameter；Complete
One piece of preparation of perovskite solar module；Etching parameters are specially power for 400mW, speed 20mm/s, frequency
100000Hz, etching width is 100 μm.
Prepare three pieces of perovskite solar modules respectively according to above-mentioned steps, and be respectively labeled as D1, D2 and D3.
Comparative example 1
This comparative example 1 provides a kind of perovskite solar module of the prior art, disconnects perovskite solar energy
The side wall of the cut-off raceway groove of continuous conductive layer is approximate 90 ° right-angle structure (cut-off channel structure such as Fig. 2 in battery module substrate
It is shown), specific preparation process is carried out with reference to embodiment 3, except the electro-conductive glass in step (1) is adjusted with the angle of projection laser
Whole is 90 ° outer, and other specification sets all same (preparation process is as shown in Figure 4).
Prepared respectively according to above-mentioned steps three pieces for contrast perovskite solar module, E1, E2 are designated as respectively
And E3.
Test case 1
This test case provides the performance test experiment of perovskite solar module in embodiment 1-4 and comparative example 1,
Specific test data is shown in Table 1- tables 5.
Perovskite solar module performance (cell area 36cm in the embodiment 1 of table 1-2)
| Short circuit current (mA cm-2) | Open-circuit voltage (V) | Factor of influence | Efficiency (%) | |
| A1 | 2.01 | 10.15 | 0.71 | 14.48 |
| A2 | 2.02 | 10.16 | 0.72 | 14.78 |
| A3 | 2.01 | 10.14 | 0.72 | 14.67 |
Perovskite solar module performance (cell area 36cm in the embodiment 2 of table 2-2)
| Short circuit current (mA cm-2) | Open-circuit voltage (V) | Factor of influence | Efficiency (%) | |
| B1 | 2.11 | 10.07 | 0.69 | 14.66 |
| B2 | 2.1 | 10.06 | 0.69 | 14.58 |
| B3 | 2.09 | 10.04 | 0.68 | 14.27 |
Perovskite solar module performance (cell area 36cm in the embodiment 3 of table 3-2)
| Short circuit current (mA cm-2) | Open-circuit voltage (V) | Factor of influence | Efficiency (%) | |
| C1 | 2.04 | 10.16 | 0.73 | 15.13 |
| C2 | 2.02 | 10.16 | 0.73 | 14.98 |
| C3 | 2.03 | 10.15 | 0.72 | 14.83 |
Perovskite solar module performance (cell area 36cm in the embodiment 4 of table 4-2)
| Short circuit current (mA cm-2) | Open-circuit voltage (V) | Factor of influence | Efficiency (%) | |
| D1 | 2.13 | 10.11 | 0.72 | 15.50 |
| D2 | 2.11 | 10.12 | 0.69 | 14.73 |
| D3 | 2.1 | 10.11 | 0.68 | 14.44 |
Perovskite solar module performance (cell area 36cm in the comparative example 1 of table 5-2)
| Short circuit current (mA cm-2) | Open-circuit voltage (V) | Factor of influence | Efficiency (%) | |
| E1 | 1.98 | 9.15 | 0.65 | 11.78 |
| E2 | 1.81 | 9.45 | 0.65 | 11.12 |
| E3 | 1.62 | 8.65 | 0.62 | 8.69 |
By the test data of table 1- tables 5, implement the raceway groove side wall that is prepared in 1-4 for ramp structure perovskite too
The performance of positive energy battery module is comprehensively the perovskite solar module of right-angle structure better than the raceway groove side wall in comparative example.
Claims (13)
1. a kind of single-unit perovskite solar cell, it is characterised in that single-unit perovskite solar cell conductive layer is at least
One open end has a first slope structure, and the first slope structure has first domatic into 110-170 ° with substrate.
2. single-unit perovskite solar cell according to claim 1, it is characterised in that the ramp structure has and base
Bottom is first domatic into 120-160 °；Preferably 130-155 °；More preferably 140-150 °.
3. single-unit perovskite solar cell according to claim 1, it is characterised in that described first is domatic for plane
It is domatic or stepped domatic；
Preferably, it is described it is stepped it is domatic be made up of some step units, the corner angle of the step unit is more than 90 °.
4. single-unit perovskite solar cell according to claim 1, it is characterised in that the single-unit perovskite solar-electricity
Pond include substrate, conductive layer, to electrode, and located at the conductive layer and between electrode be used for realize electric transmission, light inhale
Receive the photoproduction electric unit with hole transport function；The photoproduction electric unit is made up of one or more layers functional material；
Preferably, the photoproduction electric unit is made up of three layer function materials, and concrete structure is：Perovskite light absorbing zone is centre
Layer, electron transfer layer and hole transmission layer are placed in the both sides of perovskite light absorbing zone；
It is highly preferred that the substrate, conductive layer, to being provided with auxiliary layer between electrode or functional material, the auxiliary layer is used for
Improve intensity, flatness, cementability or the light transmittance of corresponding layer material.
5. single-unit perovskite solar cell according to claim 4, it is characterised in that
The conductive layer includes the stannic oxide layer of indium tin oxide layer, the zinc oxide film of adulterated al or doping fluorine；
The substrate includes substrate of glass, metallic substrates, ceramic bases or high temperature resistant organic polymer substrate；
The electron transfer layer is selected from the combination of one or more in inorganic electronic transmission material or Organic Electron Transport Material；
Wherein, the inorganic electronic transmission material includes TiO2, ZnO or SnO2；The Organic Electron Transport Material includes PCBM；
The hole transmission layer is selected from the combination of one or more in inorganic hole transporter or organic hole transport material；
Wherein, the inorganic hole transporter includes NiO, Cu2O or MoO3；The organic hole transport material includes Spiro-
OMeTAD、PEDOT:PSS or PTAA；
One or more perovskite materials ABX is included in the perovskite light absorbing zone3, A is NH=CHNH3、CH3NH3Or Cs；B
It is Pb or Sn；X is I, Cl or Br；
Described is metal electrode or non-metal electrode to electrode, and the metal electrode includes the one kind in Al, Ag, Au, Mo and Cr
Or various combinations；The non-metal electrode includes carbon electrode.
6. single-unit perovskite solar cell according to claim 4, it is characterised in that square domatic described first
Into function material layer in one or more layers, the first slope to be formed with taking advantage of a situation section；
Preferably, the electron transfer layer, perovskite light absorbing zone and hole transmission layer have the first slope to be formed section of taking advantage of a situation；
It is further preferred that formed above the slope section of the function material layer to electrode layer, to be formed with taking advantage of a situation the
One slope section.
7. the single-unit perovskite solar cell according to claim any one of 4-6, it is characterised in that the functional material
The open end of layer has the second ramp structure；Second ramp structure has second domatic into 110-170 ° with substrate；It is excellent
Elect 120-160 as；More preferably 130-155 °；More preferably 140-150 °.
8. single-unit perovskite solar cell according to claim 7, it is characterised in that the of the function material layer
Two domatic tops formed to electrode layer, the second slope section to be formed with taking advantage of a situation.
9. a kind of perovskite solar module, it is characterised in that the perovskite solar module includes two or more
Single-unit perovskite solar cell described in claim any one of 1-8；Each single-unit perovskite solar cell is placed in one piece
On overall base material.
10. perovskite solar module according to claim 9, it is characterised in that the perovskite solar cell
Function material layer in module or the disconnection section to electrode layer have first slope structure, and the first slope structure has and base
Bottom is first domatic into 110-170 °；Preferably 120-160；More preferably 130-155 °；More preferably 140-150 °.
11. perovskite solar modules according to claim 9, it is characterised in that adjacent single-unit perovskite is too
Positive can be to be connected in series between battery；
Preferably, the concrete mode that is connected in series is：Previous single-unit perovskite solar cell to electrode layer with it is rear
One conductive layer UNICOM of single-unit perovskite solar cell；
It is further preferred that the section beginning of the conductive layer being connected with to electrode layer has first slope structure.
A kind of 12. cut-off raceway grooves for disconnecting the continuous conductive layer in perovskite solar cell in substrate, it is described every
Disconnected raceway groove includes the bottom surface of substrate material and the two sides side wall of conductive layer material, it is characterised in that at least one side side wall and bottom surface
In 110-170 °；Preferably 120-160 °；More preferably 130-155 °；More preferably 140-150 °.
13. cut-off raceway grooves according to claim 12, it is characterised in that the side wall has plane domatic or stepped
It is domatic；
Preferably, it is described it is stepped it is domatic be made up of some step units, the corner angle of the step unit is more than 90 °.
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