CN106784183B - LED chip and manufacturing method thereof - Google Patents
LED chip and manufacturing method thereof Download PDFInfo
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- CN106784183B CN106784183B CN201611180404.9A CN201611180404A CN106784183B CN 106784183 B CN106784183 B CN 106784183B CN 201611180404 A CN201611180404 A CN 201611180404A CN 106784183 B CN106784183 B CN 106784183B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 18
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 14
- 239000011259 mixed solution Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000002073 nanorod Substances 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 4
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
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- Led Devices (AREA)
Abstract
本发明公开了一种LED芯片及其制作方法，属于半导体技术领域。所述LED芯片包括衬底、以及依次层叠在衬底上的未掺杂AlN缓冲层、未掺杂GaN层、N型GaN层、多量子阱层、P型AlyGa1‑yN层、P型GaN层、ITO电流扩展层，0.1＜y＜0.5，多量子阱层包括交替层叠的InGaN层和GaN层，ITO电流扩展层上设有延伸至N型GaN层的凹槽，N型电极设置在N型GaN层上，P型电极设置在ITO电流扩展层上，若干TiO2纳米棒以阵列方式设置在ITO电流扩展层上。本发明TiO2纳米棒的形成可以直接采用ITO电流扩展层作为种子层，种子层结合紧密，不容易被破坏，能够明显提高LED的发光效率。
The invention discloses an LED chip and a manufacturing method thereof, belonging to the field of semiconductor technology. The LED chip comprises a substrate, and an undoped AlN buffer layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well layer, a P-type AlyGa1 -yN layer, a P-type GaN layer, and an ITO current spreading layer stacked on the substrate in sequence, 0.1＜y＜0.5, the multi-quantum well layer comprises an InGaN layer and a GaN layer stacked alternately, the ITO current spreading layer is provided with a groove extending to the N-type GaN layer, an N-type electrode is arranged on the N-type GaN layer, a P-type electrode is arranged on the ITO current spreading layer, and a plurality of TiO2 nanorods are arranged on the ITO current spreading layer in an array manner. The formation of the TiO2 nanorods of the present invention can directly use the ITO current spreading layer as a seed layer, the seed layer is tightly combined and not easily damaged, and the luminous efficiency of the LED can be significantly improved.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of LED chip and preparation method thereof.
Background technique
With the development of semiconductor technology, light emitting diode (it is English: Light Emitting Diode, referred to as: LED)
Luminous efficiency is continuously improved, various colorful display screens, ornament lamp, indicator light, in terms of obtained it is extensive
Using, but ideal target has not been reached yet in the luminous efficiency of LED.
The luminous efficiency of LED by internal quantum efficiency and light extraction efficiency two in terms of determine, existing blue light GaN base LED's is interior
Quantum efficiency is very high, mainly improves the light extraction efficiency of LED.At present using the precipitation method on the current extending of LED
Layer of ZnO seed layer is made, then uses Hydrothermal Growth ZnO nano-rod array, to improve the luminous efficiency of LED.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The ZnO seed combination of precipitation method production is not close, and structure is more easily damaged, the improvement effect of LED luminous efficiency compared with
Difference.
Summary of the invention
In order to solve problems in the prior art, the embodiment of the invention provides a kind of LED chips and preparation method thereof.It is described
Technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of LED chip, the LED chip includes substrate and stacks gradually
Undoped AlN buffer layer, layer of undoped gan, N-type GaN layer, multiple quantum well layer, p-type Al over the substrateyGa1-yN layers, P
Type GaN layer, ITO current extending, 0.1 < y < 0.5, the multiple quantum well layer include alternately stacked InGaN layer and GaN layer,
The ITO current extending is equipped with the groove for extending to the N-type GaN layer, and N-type electrode is arranged in the N-type GaN layer, P
Type electrode is arranged on the ITO current extending, and the LED chip further includes several TiO2Nanometer rods, several TiO2It receives
Rice stick is arranged on the ITO current extending with array manner.
Optionally, the TiO2The diameter of nanometer rods is 20~80nm.
Optionally, the TiO2The height of nanometer rods is 300~500nm.
Optionally, the TiO2Nanometer rods are grown along (101) crystal orientation.
On the other hand, the embodiment of the invention provides a kind of production method of LED chip, the production method includes:
Using Metal Organic Chemical Vapor Deposition technology on substrate successively epitaxial growth undoped with AlN buffer
Layer, layer of undoped gan, N-type GaN layer, multiple quantum well layer, p-type AlyGa1-yN layers, p-type GaN layer, 0.1 < y < 0.5 are described more
Quantum well layer includes alternately stacked InGaN layer and GaN layer；
ITO current extending is formed in the p-type GaN layer using evaporation coating technique；
It is opened up on the ITO current extending using photoetching technique and lithographic technique and extends to the recessed of the N-type GaN layer
Slot；
N-type electrode is set in the N-type GaN layer, P-type electrode is set on the ITO current extending；
Photoresist is formed in the groove and in the N-type electrode and the P-type electrode using photoetching technique；
Several TiO are grown on the ITO current extending and the photoresist using hydro-thermal method2Nanometer rods, if described
Dry TiO2Nanometer rods are arranged with array manner；
Using going glue to remove the TiO on the photoresist and the photoresist2Nanometer rods；
Sliver obtains several mutually independent LED chips.
Specifically, described that several TiO are grown on the ITO current extending and the photoresist using hydro-thermal method2It receives
Rice stick, comprising:
The substrate is placed in the mixed solution being made of in hydrothermal reaction kettle butyl titanate and hydrochloric acid and is carried out instead
It answers, forms several TiO on the ITO current extending and the photoresist2Nanometer rods；
The temperature of environment where the temperature of the mixed solution is restored to the hydrothermal reaction kettle after the reaction was completed；
The substrate is taken out from the hydrothermal reaction kettle, is rinsed using deionized water, and is used and be dried with nitrogen.
Optionally, the concentration of titanium is 0.02~0.2mol/L in the mixed solution, the pH value of the mixed solution is 6~
8。
Preferably, the temperature of reaction is 100~200 DEG C, and the time of reaction is 1~10 hour.
Optionally, the TiO2The diameter of nanometer rods is 20~80nm.
Optionally, the TiO2The height of nanometer rods is 300~500nm.
Technical solution provided in an embodiment of the present invention has the benefit that
By the way that several TiO are arranged with array manner on ITO current extending2Nanometer rods, TiO2Green non-poisonous, catalysis is lived
Property it is high, chemical stability is good, low in cost, TiO2Nanometer rods and ZnO nanorod have similar photoelectric properties, utilize its uniqueness
Geometry reduce the absorption of light, while TiO2ITO current extending can be directly used as seed in the formation of nanometer rods
Layer, seed layer are tightly combined, it is not easy to are destroyed, can be significantly improved the luminous efficiency of LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram for LED chip that the embodiment of the present invention one provides；
Fig. 2 is a kind of flow diagram of the production method of LED chip provided by Embodiment 2 of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of LED chips, and referring to Fig. 1, which includes substrate 1 and stack gradually
Undoped AlN buffer layer 2, layer of undoped gan 3, N-type GaN layer 4, multiple quantum well layer 5, p-type Al on substrate 1yGa1-yN layers
6, p-type GaN layer 7,8,0.1 < y < 0.5 of tin indium oxide (English: Indium tin oxide, abbreviation: ITO) current extending.
Multiple quantum well layer includes alternately stacked InGaN layer and GaN layer.ITO current extending 8 is equipped with and extends to N-type GaN layer 4
Groove, N-type electrode 9 are arranged in N-type GaN layer 4, and P-type electrode 10 is arranged on ITO current extending 8.
In the present embodiment, which further includes several TiO2Nanometer rods 11, several TiO2Nanometer rods 11 are with array side
Formula is arranged on ITO current extending 8.
Optionally, TiO2The diameter of nanometer rods can be 20~80nm.
Optionally, TiO2The height of nanometer rods can be 300~500nm.
Optionally, TiO2Nanometer rods are grown along (101) crystal orientation.
Optionally, substrate can be the GaAs substrate suitable for red yellow light LED, or suitable for blue green light LED
Sapphire Substrate, SiC substrate or GaN substrate.
The embodiment of the present invention is by being arranged several TiO on ITO current extending with array manner2Nanometer rods, TiO2Green
It is nontoxic, catalytic activity is high, chemical stability is good, low in cost, TiO2Nanometer rods and ZnO nanorod have similar photo electric
Can, the absorption of light, while TiO are reduced using its unique geometry2The expansion of ITO electric current can be directly used in the formation of nanometer rods
Layer is opened up as seed layer, seed layer is tightly combined, it is not easy to is destroyed, can be significantly improved the luminous efficiency of LED.
Embodiment two
The embodiment of the invention provides a kind of production methods of LED chip, suitable for making the LED core of the offer of embodiment one
Piece, referring to fig. 2, which includes:
Step 201: using Metal Organic Chemical Vapor Deposition (English: metal organic chemical
Vapour deposition, referred to as: MOCVD) technology on substrate successively epitaxial growth undoped with AlN buffer layer, undoped
GaN layer, N-type GaN layer, multiple quantum well layer, AlyGa1-yN layers of p-type, p-type GaN layer, 0.1 < y < 0.5, multiple quantum well layer include
Alternately stacked InGaN layer and GaN layer.
Optionally, substrate can be the GaAs substrate suitable for red yellow light LED, or suitable for blue green light LED
Sapphire Substrate, SiC substrate or GaN substrate.
Step 202: ITO current extending is formed in p-type GaN layer using evaporation coating technique.
Step 203: being opened up on ITO current extending using photoetching technique and lithographic technique and extend to the recessed of N-type GaN layer
Slot.
Specifically, which may include:
A layer photoresist is coated on ITO current extending；
Using photoetching technique part photoresist；
Under the protection of photoresist, using inductively coupled plasma body (English: Inductive Coupled Plasma,
Referred to as: ICP) lithographic technique opens up the groove for extending to N-type GaN layer on ITO current extending；
Remove photoresist.
Step 204: N-type electrode being set in N-type GaN layer, P-type electrode is set on ITO current extending.
Step 205: photoresist is formed in groove and in N-type electrode and P-type electrode using photoetching technique.
Step 206: several TiO are grown on ITO current extending and photoresist using hydro-thermal method2Nanometer rods, several TiO2
Nanometer rods are arranged with array manner.
Specifically, which may include:
Substrate is placed in the mixed solution being made of in hydrothermal reaction kettle butyl titanate and hydrochloric acid and is reacted,
Several TiO are formed on ITO current extending and photoresist2Nanometer rods；
The temperature of mixed solution is restored to the temperature of environment where hydrothermal reaction kettle after the reaction was completed；
Substrate is taken out from hydrothermal reaction kettle, is rinsed using deionized water, and is used and be dried with nitrogen.
Optionally, the concentration of titanium can be 0.02~0.2mol/L in mixed solution, the pH value of mixed solution can for 6~
8。
Preferably, the temperature of reaction can be 100~200 DEG C, and temperature is lower, will not influence the structure and electrical property of LED
Energy；The time of reaction can be 1~10 hour.
Optionally, TiO2The diameter of nanometer rods can be 20~80nm.
Optionally, TiO2The height of nanometer rods can be 300~500nm.
Optionally, TiO2Nanometer rods are grown along (101) crystal orientation.
It should be noted that by changing the concentration of titanium in the mixed solution, pH value of mixed solution, the temperature of reaction, anti-
The time answered, adjustable TiO2Diameter, the TiO of nanometer rods2The height of nanometer rods, TiO2The direction of growth of nanometer rods, TiO2It receives
The density of rice stick, TiO2The surface roughness of nanometer rods, to make TiO2The array surface product of nanometer rods reaches maximum, light extraction
Efficiency reaches highest, i.e., utmostly improves luminous efficiency.
Step 207: using the TiO gone on glue removal photoresist and photoresist2Nanometer rods.
Optionally, which can also include:
It is rinsed using deionized water, and uses and be dried with nitrogen.
Step 208: sliver obtains several mutually independent LED chips.
The embodiment of the present invention is by being arranged several TiO on ITO current extending with array manner2Nanometer rods, TiO2Green
It is nontoxic, catalytic activity is high, chemical stability is good, low in cost, TiO2Nanometer rods and ZnO nanorod have similar photo electric
Can, the absorption of light, while TiO are reduced using its unique geometry2The expansion of ITO electric current can be directly used in the formation of nanometer rods
Layer is opened up as seed layer, seed layer is tightly combined, it is not easy to is destroyed, can be significantly improved the luminous efficiency of LED.And TiO2
In the forming process of nanometer rods, photoresist overlay on the electrode, can form good protection to electrode, can be electric to avoid influencing
Learn performance.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (3)
1. a kind of production method of LED chip, which is characterized in that the production method includes:
Using Metal Organic Chemical Vapor Deposition technology on substrate successively epitaxial growth undoped with AlN buffer layer, not
Doped gan layer, N-type GaN layer, multiple quantum well layer, p-type AlyGa1-yN layers, p-type GaN layer, 0.1 < y < 0.5, the multiple quantum wells
Layer includes alternately stacked InGaN layer and GaN layer；
ITO current extending is formed in the p-type GaN layer using evaporation coating technique；
The groove for extending to the N-type GaN layer is opened up on the ITO current extending using photoetching technique and lithographic technique；
N-type electrode is set in the N-type GaN layer, P-type electrode is set on the ITO current extending；
Photoresist is formed in the groove and in the N-type electrode and the P-type electrode using photoetching technique；
Several TiO are grown on the ITO current extending and the photoresist using hydro-thermal method2Nanometer rods, several TiO2
Nanometer rods are arranged with array manner, and the ITO current extending is several TiO2The seed layer of nanometer rods；
Using going glue to remove the TiO on the photoresist and the photoresist2Nanometer rods；
Sliver obtains several mutually independent LED chips；
It is described that several TiO are grown on the ITO current extending and the photoresist using hydro-thermal method2Nanometer rods, comprising:
The substrate is placed in the mixed solution being made of in hydrothermal reaction kettle butyl titanate and hydrochloric acid and is reacted,
Several TiO are formed on the ITO current extending and the photoresist2Nanometer rods；The concentration of titanium in the mixed solution
For 0.02~0.2mol/L, the pH value of the mixed solution is 6~8；The temperature of reaction is 100~200 DEG C, and the time of reaction is
1~10 hour
The temperature of environment where the temperature of the mixed solution is restored to the hydrothermal reaction kettle after the reaction was completed；
The substrate is taken out from the hydrothermal reaction kettle, is rinsed using deionized water, and is used and be dried with nitrogen.
2. manufacturing method according to claim 1, which is characterized in that the TiO2The diameter of nanometer rods is 20~80nm.
3. production method according to claim 1 or 2, which is characterized in that the TiO2The height of nanometer rods be 300~
500nm。
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| CN108346727A (en) * | 2017-12-26 | 2018-07-31 | 华灿光电(苏州）有限公司 | Light-emitting diode chip for backlight unit and preparation method thereof |
| CN108198914B (en) * | 2017-12-29 | 2019-08-02 | 青岛科技大学 | A kind of inserted TiO2The method of nanometer rods cluster periodic array raising LED luminous efficiency |
| CN116914040B (en) * | 2023-08-03 | 2025-12-16 | 佛山市国星半导体技术有限公司 | High-brightness light-emitting diode epitaxial structure, preparation method thereof and LED |
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| KR20100050430A (en) * | 2008-11-04 | 2010-05-13 | 삼성엘이디 주식회사 | Light emitting device with fine pattern |
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