CN106783585A - Lithographic method based on ledge structure - Google Patents
Lithographic method based on ledge structure Download PDFInfo
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- CN106783585A CN106783585A CN201611217101.XA CN201611217101A CN106783585A CN 106783585 A CN106783585 A CN 106783585A CN 201611217101 A CN201611217101 A CN 201611217101A CN 106783585 A CN106783585 A CN 106783585A
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- ledge structure
- etching
- lithographic method
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000005530 etching Methods 0.000 claims abstract description 47
- 230000007704 transition Effects 0.000 claims abstract description 33
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 13
- 239000010408 film Substances 0.000 description 37
- 238000010586 diagram Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of lithographic method based on ledge structure, and it comprises the following steps：S1. in the one layer of transition layer film of area deposition where the ledge structure；S2. the transition layer film is performed etching, is etched to the etching stop layer of the ledge structure；S3. in the area deposition etch layer where the ledge structure；S4. graphic structure layer is made in the corresponding etch layer of the ledge structure；S5. the etching removal etch layer is not by the part of graphic structure layer covering；S6. etching removes the graphic structure layer.Lithographic method technology controlling and process based on ledge structure of the invention is simple, morphology controllable and reproducible, which obviates dry etch process parameter adjustment and influences process stability and properties of product；And can be by the film morphology smoothness at the thickness and then control ledge structure that adjust transition zone；Solve MEMS product technique because shoulder height difference is big and caused by technique problem of implementation.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of lithographic method based on ledge structure.
Background technology
In MEMS technology, the thick thickness change of each tunic is very big, becomes typically in tens nanometers to tens microns intervals
Change, so in thin film after gold-tinted and etching technics are good graphic definition, due to structural requirement or technological ability, one
As figure edge contour it is all relatively straight, so as to the structure and morphology of step can be formed.Wherein, film thickness is thicker, the platform of formation
The difference in height of rank is bigger.
Usual MEMS product needs to have no idea to planarize due to structure, and due to defining the meeting when the figure of layer film
Need and previous layer pattern forming part is overlapped, be accomplished by film whole thick at etch areas step during etching transition diagram
Remove.Because wet etching can cause figure line width Loss too many and not smooth enough the problem of etch topography, in order to avoid these
Problem would generally select dry etching, but due to needing that the thin film removing at etch areas step is clean, and dry etching needs
Plus it is very heavy cross quarter amount, very thick etch stopper layer film is so accomplished by ensure that needing the figure for retaining not have top damages
Wound, and need very thick etching stopping layer film to ensure not influence the structure of front layer.
But, in a practical situation, the graphic width size and graphic structure of product requirement do not allow design generally again
Using very thick etching barrier layer and etching stopping layer film, so as to easily have at etch areas step after causing dry etching
Etching thin film residue, therefore ledge structure difference in height it is larger when often cause Product Process to realize problem.
Specifically, at present, the existing process solution for ledge structure difference in height when larger typically has following several
Kind：
(1), the Sidewall angles to front layer thin films step figure improve：Carved by adjusting step cutting pattern dry or wet
The technological parameter of step is lost, the Sidewall angles of step cutting pattern are tended to flat as far as possible reduces the film thickness that ledge structure is caused
Difference.
However, above-mentioned way there are the following problems：
1) Product Process usually requires that comparing is straight to Sidewall angles, does not allow angle excessively flat；2) dry or wet is carved
The operational characteristic and technological ability of erosion, are difficult to realize relatively flat side wall, so that Sidewall angles adjustable space is less, very
Difficulty plays a part of to be obviously improved.
2), when the etching technics of layer film uses wet etching：Using wet etching etc. tropism cause it is thin at step
Film can be removed totally.
However, above-mentioned way there are the following problems：
1), easily loss is too many for figure line width, and is unsatisfactory for product design requirement；2) etch topography is not smooth enough and influence
Properties of product.
2) amount of etched quarter is improved when the etching technics of layer film is using dry etching,：Overlapped by adjusting
The time of the dry etch process of figure or etching rate are tried one's best and increase the quarter amount of crossing of etching to enable that the film at step is removed dry
Only.
However, above-mentioned way there are the following problems：
1), etch stopper layer film is easily unsatisfactory for blocking requirement, and causes reservation figure top to damage damage；
2), etching stopping layer film is easily unsatisfactory for blocking requirement, and causes to damage the structure of front layer.
The content of the invention
It is an object of the invention to provide a kind of lithographic method based on ledge structure, to solve present in prior art
Problem.
To reach above-mentioned purpose, the present invention provides following technical scheme：
Lithographic method based on ledge structure of the invention comprises the following steps：
S1. in the one layer of transition layer film of area deposition where the ledge structure；
S2. the transition layer film is performed etching, is etched to the etching stop layer of the ledge structure；
S3. in the area deposition etch layer where the ledge structure；
S4. graphic structure layer is made in the corresponding etch layer of the ledge structure；
S5. the etching removal etch layer is not by the part of graphic structure layer covering；
S6. etching removes the graphic structure layer.
Further：In the step S1, the transition layer film is completely covered the ledge structure and its peripheral region.
Further：In the step S2, after the completion of etching, the top surface of the ledge structure is by positioned at the Step-edge Junction
The transition layer film of structure both sides residual is formed with its peripheral region and seamlessly transitted.
Further：In the step S2, the transition layer film is phase same material with the etching stop layer.
Further：In the step S2, the transition layer film is unlike material with the etching stop layer.
Further：In the step S3, the corresponding etch layer thickness of the ledge structure and its peripheral region is uniform, and
With the pattern for seamlessly transitting.
Further：In the step S4, figure is made in the corresponding etch layer of the ledge structure by photolithography method
Shape structure sheaf, the graphic structure layer is photoresist layer.
Further：In the step S5, the etch layer is removed by dry etching and is not covered by graphic structure layer
The part of lid.
The beneficial effects of the present invention are：Lithographic method technology controlling and process based on ledge structure of the invention is simple, pattern
It is controllable and reproducible, which obviate dry etch process parameter adjustment and influence process stability and properties of product；And can
With by the film morphology smoothness at the thickness and then control ledge structure that adjust transition zone；Solve MEMS product technique because
The technique problem of implementation that shoulder height difference is big and causes.
Described above is only the general introduction of technical solution of the present invention, in order to better understand technological means of the invention,
And can be practiced according to the content of specification, below with presently preferred embodiments of the present invention and coordinate accompanying drawing describe in detail as after.
Brief description of the drawings
Fig. 1 is the method flow schematic diagram of the lithographic method based on ledge structure of the invention；
Fig. 2 is the floor map of ledge structure；
Fig. 3 is the schematic diagram of the lithographic method based on ledge structure of invention；
Fig. 4 is the schematic diagram of the lithographic method based on ledge structure of invention；
Fig. 5 is the schematic diagram of the lithographic method based on ledge structure of invention；
Fig. 6 is the schematic diagram of the lithographic method based on ledge structure of invention；
Fig. 7 is the schematic diagram of the lithographic method based on ledge structure of invention；
Fig. 8 is the schematic diagram of the lithographic method based on ledge structure of invention.
Specific embodiment
As shown in figure 1, the lithographic method based on ledge structure of the invention comprises the following steps：
S1. in the one layer of transition layer film of area deposition where the ledge structure.
S2. the transition layer film is performed etching, is etched to the etching stop layer of the ledge structure.
S3. in the area deposition etch layer where the ledge structure.
S4. graphic structure layer is made in the corresponding etch layer of the ledge structure.
S5. the etching removal etch layer is not by the part of graphic structure layer covering.
S6. etching removes the graphic structure layer.
With reference to the accompanying drawings and examples, specific embodiment of the invention is described in further detail.Hereinafter implement
Example is not limited to the scope of the present invention for illustrating the present invention.
Fig. 2 is referred to, the thickness of the ledge structure 1 is thicker, and side wall is more straight, and it is located in substrate 2.The ledge structure
Deposition has etching stop layer 3 on 1, and the etching stop layer 3 is completely covered the ledge structure 1 and its peripheral region.
As shown in Fig. 3~8, so that, lithographic method of the present invention based on above-mentioned ledge structure comprises the following steps：
S1. in the one layer of transition layer film 4 of area deposition where the ledge structure 1.
As shown in figure 3, the purpose of the step S1 is before the etch layer 5 that deposition needs etching, in the etch-stop
One layer of transition layer film 4 is only deposited on layer 3, it is preferable that the transition layer film 4 is completely covered the ledge structure 1 and its week
Enclose region.Meanwhile, the thickness of the transition layer film 4 can be adjusted, and then control the film morphology at ledge structure 1 to smooth
Degree.The thickness of the transition layer film 4 is thicker, and the pattern of the ledge structure 1 is more smooth.
S2. the transition layer film 4 is performed etching, is etched to the etching stop layer 3 of the ledge structure 1.
As shown in figure 4, in the step S2, it is preferred to use etching back techniques are carried out to the transition layer film 4
Etching.Due to being etched to the etching stop layer 3 of the ledge structure 1, the top surface of the ledge structure 1 is exposed first, this
When stop etching, the transition layer film 4 of the both sides of the ledge structure 1 retained.So as to, after the completion of etching, the step
The both sides side of structure 1 can remain transition layer film 4, and the top surface of the ledge structure 1 is by positioned at 1 liang of the ledge structure
The transition layer film 4 of side residual is formed with its peripheral region and seamlessly transitted.The transition layer film 4 and the etching stop layer 3
Can be identical material, or be unlike material.
S3. in the area deposition etch layer 5 where the ledge structure 1.
As shown in figure 5, in the step S3, because the top surface of the ledge structure 1 is by positioned at 1 liang of the ledge structure
The transition layer film 4 of side residual is formed with its peripheral region and seamlessly transitted, so that the ledge structure 1 and its peripheral region correspondence
The thickness of etch layer 5 it is uniform, and with the pattern for seamlessly transitting.In this way, solving MEMS product technique because shoulder height difference is big
And the technique problem of implementation for causing.
S4. graphic structure layer 6 is made in the corresponding etch layer 5 of the ledge structure 1.
As shown in fig. 6, in the step S4, the graphic structure for making as needed, at the corresponding quarter of the ledge structure 1
Graphic structure layer 6 is made on erosion layer 5.Preferably, graphic structure layer 6 is made by photolithography method, now, the graphic structure layer
6 is photoresist layer.
S5. the etching removal etch layer 5 is not by the part of the covering of graphic structure layer 6.
As shown in fig. 7, in the step S5, because the both sides of the ledge structure 1 remain transition layer film 4, so that, carve
Behind the part that etching off is not covered except the etch layer 5 by graphic structure layer 6, will not be remained in the both sides of the ledge structure 1
Etch layer 5.Preferably, the etch layer 5 is removed not by the part of the covering of graphic structure layer 6 by dry etching.
S6. etching removes the graphic structure layer.
In sum：The above-mentioned lithographic method technology controlling and process based on ledge structure is simple, morphology controllable and reproducible, its
Avoid dry etch process parameter adjustment and influence process stability and properties of product；And can be by adjusting transition zone
Film morphology smoothness at thickness and then control ledge structure；Solve MEMS product technique because shoulder height difference is big and caused by
Technique problem of implementation.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (8)
1. a kind of lithographic method based on ledge structure, it is characterised in that the lithographic method based on ledge structure is included such as
Lower step：
S1. in the one layer of transition layer film of area deposition where the ledge structure；
S2. the transition layer film is performed etching, is etched to the etching stop layer of the ledge structure；
S3. in the area deposition etch layer where the ledge structure；
S4. graphic structure layer is made in the corresponding etch layer of the ledge structure；
S5. the etching removal etch layer is not by the part of graphic structure layer covering；
S6. etching removes the graphic structure layer.
2. the lithographic method based on ledge structure according to claim 1, it is characterised in that described in the step S1
Transition layer film is completely covered the ledge structure and its peripheral region.
3. the lithographic method based on ledge structure according to claim 1, it is characterised in that in the step S2, etching
After the completion of, the top surface of the ledge structure is by the transition layer film and its peripheral region that are remained positioned at the ledge structure both sides
Formation is seamlessly transitted.
4. the lithographic method based on ledge structure according to claim 1, it is characterised in that described in the step S2
Transition layer film is phase same material with the etching stop layer.
5. the lithographic method based on ledge structure according to claim 1, it is characterised in that described in the step S2
Transition layer film is unlike material with the etching stop layer.
6. the lithographic method based on ledge structure according to claim 1, it is characterised in that described in the step S3
The corresponding etch layer thickness of ledge structure and its peripheral region is uniform, and with the pattern for seamlessly transitting.
7. the lithographic method based on ledge structure according to claim 1, it is characterised in that in the step S4, pass through
Photolithography method makes graphic structure layer in the corresponding etch layer of the ledge structure, and the graphic structure layer is photoresist layer.
8. the lithographic method based on ledge structure according to claim 1, it is characterised in that in the step S5, pass through
Dry etching removes the etch layer not by the part of graphic structure layer covering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611217101.XA CN106783585A (en) | 2016-12-26 | 2016-12-26 | Lithographic method based on ledge structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611217101.XA CN106783585A (en) | 2016-12-26 | 2016-12-26 | Lithographic method based on ledge structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108376646A (en) * | 2017-12-14 | 2018-08-07 | 上海集成电路研发中心有限公司 | A kind of graphic method of step in semiconductor devices processing procedure |
| CN115188668A (en) * | 2022-07-08 | 2022-10-14 | 上海华虹宏力半导体制造有限公司 | Semiconductor device process method |
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| CN102446819A (en) * | 2011-08-17 | 2012-05-09 | 上海华力微电子有限公司 | Method used for improving dual contact-etch-stop-layer crossover region contact etch |
| CN102569049A (en) * | 2010-12-28 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of metal grid electrode |
| CN102723313A (en) * | 2012-05-04 | 2012-10-10 | 上海华力微电子有限公司 | Technological preparation method of SRAM |
| CN103531473A (en) * | 2012-07-02 | 2014-01-22 | 中国科学院微电子研究所 | Etching method of silicon oxide and silicon nitride double-layer composite side wall |
| CN104282542A (en) * | 2013-07-08 | 2015-01-14 | 上海华虹宏力半导体制造有限公司 | Method for solving problem of polycrystalline silicon residues on protecting ring field oxygen side wall of super-junction product |
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2016
- 2016-12-26 CN CN201611217101.XA patent/CN106783585A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101271844A (en) * | 2008-03-24 | 2008-09-24 | 中国电子科技集团公司第十三研究所 | Planarization and side wall passivation technology for producing silicon carbide device |
| CN102403218A (en) * | 2010-09-09 | 2012-04-04 | 上海华虹Nec电子有限公司 | Etching method for contact holes |
| CN102569049A (en) * | 2010-12-28 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of metal grid electrode |
| CN102446819A (en) * | 2011-08-17 | 2012-05-09 | 上海华力微电子有限公司 | Method used for improving dual contact-etch-stop-layer crossover region contact etch |
| CN102723313A (en) * | 2012-05-04 | 2012-10-10 | 上海华力微电子有限公司 | Technological preparation method of SRAM |
| CN103531473A (en) * | 2012-07-02 | 2014-01-22 | 中国科学院微电子研究所 | Etching method of silicon oxide and silicon nitride double-layer composite side wall |
| CN104282542A (en) * | 2013-07-08 | 2015-01-14 | 上海华虹宏力半导体制造有限公司 | Method for solving problem of polycrystalline silicon residues on protecting ring field oxygen side wall of super-junction product |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108376646A (en) * | 2017-12-14 | 2018-08-07 | 上海集成电路研发中心有限公司 | A kind of graphic method of step in semiconductor devices processing procedure |
| CN108376646B (en) * | 2017-12-14 | 2020-10-02 | 上海集成电路研发中心有限公司 | A method for patterning steps in a semiconductor device manufacturing process |
| CN115188668A (en) * | 2022-07-08 | 2022-10-14 | 上海华虹宏力半导体制造有限公司 | Semiconductor device process method |
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Application publication date: 20170531 |