CN106768345B - Method based on surface plasma direct measurement vertically polarized light polarization state - Google Patents
Method based on surface plasma direct measurement vertically polarized light polarization state Download PDFInfo
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- CN106768345B CN106768345B CN201611036724.7A CN201611036724A CN106768345B CN 106768345 B CN106768345 B CN 106768345B CN 201611036724 A CN201611036724 A CN 201611036724A CN 106768345 B CN106768345 B CN 106768345B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
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- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention relates to a kind of method based on surface plasma direct measurement vertically polarized light polarization state, and when metal nanoparticle is excited by light, the distribution of its caused surface plasma is determined by the polarization state of exciting light.Based on this phenomenon, detection substrate is devised, by detecting the pattern on substrate recording layer after observing exposure to judge the polarization state of exciting light.The direct measurement to longitudinal polarization state of vertically polarized light is realized, this is that other current polarization measurement methods can not be realized；Measuring method is easy and effective, easily implements.
Description
Technical field
It is more particularly to a kind of longitudinally inclined based on surface plasma direct measurement the present invention relates to a kind of optical measuring technique
Shake the method for polarization state.
Background technology
The polarization state of light is one of important attribute of light, is the ginseng that must take into consideration during the application and research of light
Number, therefore the polarization state for measuring light is particularly important.Hung down for common cross-polarization light, that is, polarization direction with the direction of propagation
Straight light, the polarization direction of light can be easily determined by rotatory polarization piece.But for vertically polarized light, that is, partially
Shake the direction of propagation identical light of direction and light, and the transmission of the rotation of polarizer on light does not influence, thus can not detect polarization
State.
There are some round-about ways to vertically polarized light measuring polarization state at present：Such as light is measured vertical using photoresist
Intensity distribution in the plane of the direction of propagation, using the intensity distribution of second harmonic, and the method using dipole scattering, it is this
Method needs the accurate restructing operation placed nano particle and use complexity.But the vertically polarized light of all these method measurements
The cross-polarization component more stronger than longitudinal component is all carried, and these methods are inferred by the measurement to transverse electric field distribution
Go out the distribution of longitudinal component electric field.
The content of the invention
The problem of can not measuring vertically polarized light polarization state the present invention be directed to prior art, it is proposed that one kind is based on surface
The method of plasma direct measurement vertically polarized light polarization state, the method is simple and easy, and solving at present can not direct measurement
The problem of vertically polarized light polarization state.
The technical scheme is that：A kind of side based on surface plasma direct measurement vertically polarized light polarization state
Method, specifically comprise the following steps：
1）Make detection substrate, detection substrate include glass substrate, be attached to glass substantially with glass substrate area phase
The chromium thin film recording layer of 200 same nanometer thickness, and metal nanoparticle on the recording layer；
2）Adjustable light power attenuator and exposure shutter are sequentially placed in the light path of light beam to be measured, in the end of light path,
Detection substrate is placed in the position for namely measuring light polarization state, and band light-metering impinges perpendicularly on recording layer；
3）In the range of adjustable light power attenuator regulating optical power to coincidence measurement requirement；
4）The time for exposure of regulation exposure shutter, light beam to be measured is by adjustable light power attenuator and exposes shutter, then
Impinge perpendicularly on detection substrate, carry out single exposure；
5）Observed using the SEM region illuminated in exposure process to detection substrate, note down this
Metal nanoparticle present position and its neighbouring surface topography on recording layer in region；
6）By calculating simulation, obtain detecting the electric field point on substrate on recording layer near metal nanoparticle present position
Butut, then by step 5）In obtained surface topography contrasted with analog result, determine the polarization state of light beam to be measured.
The size of metal nanoparticle on the recording layer is 1/3 or so of tested light beam wavelength.
The beneficial effects of the present invention are：The present invention is based on surface plasma direct measurement vertically polarized light polarization state
Method, the direct measurement to longitudinal polarization state of vertically polarized light is realized, this is that other current polarization measurement methods can not be real
Existing；Measuring method is easy and effective, easily implements.
Brief description of the drawings
Fig. 1 is surface plasma direct measurement vertically polarized light polarization state apparatus structure schematic diagram of the present invention；
Fig. 2 is the structural representation that substrate is detected in the present invention；
Fig. 3 is the distribution map of the electric field that the linearly polarized light that calculating simulation obtains excites lower vicinity of metal nanoparticles；
Fig. 4 is method of the present invention using the present invention, in the case where linearly polarized light excites, after exposed, by scanning electron microscopy
The recording layer surface topography map in metal nanoparticle position that mirror observes；
Fig. 5 is the distribution map of the electric field that the vertically polarized light that calculating simulation obtains excites lower vicinity of metal nanoparticles；
Fig. 6 is method of the present invention using the present invention, in the case where vertically polarized light excites, after exposed, is shown by scanning electron
The recording layer surface topography map in metal nanoparticle position that micro mirror observes.
Embodiment
The inventive method is substantially：When metal nanoparticle is excited by light, the distribution of its caused surface plasma
Determined by the polarization state of exciting light.Based on this phenomenon, detection substrate is devised, by detecting substrate recording layer after observing exposure
On pattern judge the polarization state of exciting light.
As Fig. 1 for the present invention be based on surface plasma direct measurement vertically polarized light polarization state apparatus structure schematic diagram,
Then light beam to be measured is impinged perpendicularly on detection substrate 3 by adjustable light power attenuator 1 and exposure shutter 2.As shown in Figure 2
The structural representation of substrate is detected, detection substrate 3 includes bottom glass substrate 31, same with glass substrate 31 on glass substrate 31
The recording layer 32 that the chromium thin film of 200 nanometer thickness of area is formed, and the metal nanoparticle 33 on recording layer 32, visit
The size for surveying metal nanoparticle 33 on substrate 3 is 1/3 or so or smaller of tested light beam wavelength, the detection substrate surface
Vertical with optical propagation direction to be measured, recording layer 32 is towards light beam to be measured.
Adjustable light power attenuator 1 is used to adjust light intensity；Exposure shutter 2 is used for exposing operation, and regulating optical power first declines
Subtract device 1 and time for exposure 2, the recording layer for making to detect after exposure on substrate 3 produces clearly pattern, without because luminous power it is too high
Or the time for exposure is long and burns；Then single exposure is carried out.Note after exposure using SEM to detection substrate 3
Record layer is observed, and notes down the recording layer surface topography of the present position of metal nanoparticle 33 and its surrounding.Utilize calculating simulation
Method obtain exciting the distribution map of the electric field of lower vicinity of metal nanoparticles in the light of different polarization states.Obtained in comparative test
The distribution map of the electric field that recording layer configuration of surface figure and calculating simulation obtain, so that it is determined that light beam to be measured is in detection substrate 3 position
Polarization state.
In embodiment, first by linearly polarized light, the distribution map of the electric field that calculating simulation obtains is as shown in figure 3, in figure
Metallic particles present position 41, recording layer present position 42.Obtained recording layer surface topography is tested to enter shown in Fig. 4.It can see
To Fig. 4 centers circle the location of for metal nanoparticle, recording layer position in the nicking and Fig. 3 at left and right sides of it
Two maximum of intensity positions match, it was demonstrated that the polarization state of tested light beam is linear polarization.Then this embodiment has used vertical
To polarised light, distribution map of the electric field that calculating simulation obtains is as shown in figure 5, metallic particles present position 51 in figure, residing for recording layer
Position 52.Obtained recording layer surface topography is tested to enter shown in Fig. 6.It can be seen that Fig. 6 only exists the circular pattern at center, its position
Put and matched with the circular intensity maximum regional location of recording layer position immediately below metal nanoparticle in Fig. 5, it was demonstrated that be tested
The polarization state of light beam polarizes for longitudinal direction.This example demonstrates being indulged based on surface plasma direct measurement of being proposed in the present invention
It is feasible to the method for polarization polarization state, effectively.
The inventive method comprises the following steps that：
（1）Structure fabrication detection substrate as shown in Figure 2；
（2）Adjustable light power attenuator and exposure shutter are sequentially placed in the light path of light beam to be measured, in the end of light path,
The position for measuring light polarization state is namely needed to place detection substrate；
（3）In the range of adjustable light power attenuator regulating optical power to coincidence measurement requirement；
（4）The time for exposure of regulation exposure shutter, carry out single exposure；
（5）Observed, noted down using the SEM region illuminated in exposure process to detection substrate
Metal nanoparticle present position and its neighbouring surface topography on recording layer in this region；
（6）By calculating simulation, obtain detecting the electric field on substrate on recording layer near metal nanoparticle present position
Distribution map, then by the process（5）In obtained surface topography contrasted with analog result, determine the polarization of light beam to be measured
State.
Claims (1)
- A kind of 1. method based on surface plasma direct measurement vertically polarized light polarization state, it is characterised in that specifically include Following steps：1）Make detection substrate, detection substrate include glass substrate, be attached to glass substantially with glass substrate area identical The chromium thin film recording layer of 200 nanometer thickness, and metal nanoparticle on the recording layer, metal nanoparticle on recording layer Size is 1/3 or so of tested light beam wavelength；2）Adjustable light power attenuator and exposure shutter are sequentially placed in the light path of light beam to be measured, in the end of light path, also It is that detection substrate is placed in the position for measuring light polarization state, band light-metering impinges perpendicularly on recording layer；3）In the range of adjustable light power attenuator regulating optical power to coincidence measurement requirement；4）The time for exposure of regulation exposure shutter, light beam to be measured is by adjustable light power attenuator and exposes shutter, then vertically Incide on detection substrate, carry out single exposure；5）Observed using the SEM region illuminated in exposure process to detection substrate, note down this region Metal nanoparticle present position and its neighbouring surface topography on interior recording layer；6）By calculating simulation, obtain detecting the Electric Field Distribution on substrate on recording layer near metal nanoparticle present position Figure, then by step 5）In obtained surface topography contrasted with analog result, determine the polarization state of light beam to be measured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611036724.7A CN106768345B (en) | 2016-11-23 | 2016-11-23 | Method based on surface plasma direct measurement vertically polarized light polarization state |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611036724.7A CN106768345B (en) | 2016-11-23 | 2016-11-23 | Method based on surface plasma direct measurement vertically polarized light polarization state |
Publications (2)
| Publication Number | Publication Date |
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| CN106768345A CN106768345A (en) | 2017-05-31 |
| CN106768345B true CN106768345B (en) | 2018-04-06 |
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| CN201611036724.7A Expired - Fee Related CN106768345B (en) | 2016-11-23 | 2016-11-23 | Method based on surface plasma direct measurement vertically polarized light polarization state |
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Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103968948B (en) * | 2013-02-04 | 2016-04-27 | 清华大学 | The detection method of polarized light |
| CN104236715B (en) * | 2014-09-24 | 2016-06-29 | 中国科学院苏州生物医学工程技术研究所 | A kind of light beam is at the polarization state space distribution measurement method of focal spot and device |
| CN104457995B (en) * | 2014-12-15 | 2017-02-08 | 清华大学深圳研究生院 | Fast polarization detector and detecting method |
| CN104614073B (en) * | 2015-01-22 | 2017-04-26 | 华中科技大学 | System and method for polarization detection based on silicon-based liquid crystal |
| ES2566684B2 (en) * | 2016-02-11 | 2016-09-26 | Universitat Politècnica De València | Device and method for measuring the polarization state of an incident beam |
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