CN106750848A - A kind of easily peelable semiconductive shieldin material and preparation method thereof - Google Patents
A kind of easily peelable semiconductive shieldin material and preparation method thereof Download PDFInfo
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- CN106750848A CN106750848A CN201611036339.2A CN201611036339A CN106750848A CN 106750848 A CN106750848 A CN 106750848A CN 201611036339 A CN201611036339 A CN 201611036339A CN 106750848 A CN106750848 A CN 106750848A
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- semiconductive shieldin
- easily peelable
- shieldin material
- liquid surfactant
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- 239000000463 material Substances 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title claims description 10
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000004094 surface-active agent Substances 0.000 claims abstract description 16
- 239000005038 ethylene vinyl acetate Substances 0.000 claims abstract description 13
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims abstract description 13
- 239000003921 oil Substances 0.000 claims abstract description 12
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims abstract description 9
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 8
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 8
- 229920000459 Nitrile rubber Polymers 0.000 claims abstract description 7
- 239000002270 dispersing agent Substances 0.000 claims abstract description 7
- 239000002608 ionic liquid Substances 0.000 claims abstract description 7
- 239000000314 lubricant Substances 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 6
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000155 melt Substances 0.000 claims abstract description 4
- 229920000642 polymer Polymers 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims description 12
- 238000001914 filtration Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- -1 imidazole ion Chemical class 0.000 claims description 6
- 239000012188 paraffin wax Substances 0.000 claims description 5
- 239000002826 coolant Substances 0.000 claims description 3
- 238000005469 granulation Methods 0.000 claims description 3
- 230000003179 granulation Effects 0.000 claims description 3
- 238000004898 kneading Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000018044 dehydration Effects 0.000 claims description 2
- 238000006297 dehydration reaction Methods 0.000 claims description 2
- 238000001764 infiltration Methods 0.000 claims description 2
- 230000008595 infiltration Effects 0.000 claims description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical group CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 description 8
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical group [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- HQKMJHAJHXVSDF-UHFFFAOYSA-L magnesium stearate Chemical compound [Mg+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O HQKMJHAJHXVSDF-UHFFFAOYSA-L 0.000 description 2
- 229940117958 vinyl acetate Drugs 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 101150087322 DCPS gene Proteins 0.000 description 1
- 101100386724 Schizosaccharomyces pombe (strain 972 / ATCC 24843) nhm1 gene Proteins 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229920003020 cross-linked polyethylene Polymers 0.000 description 1
- 239000004703 cross-linked polyethylene Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- DERLTVRRWCJVCP-UHFFFAOYSA-N ethene;ethyl acetate Chemical compound C=C.CCOC(C)=O DERLTVRRWCJVCP-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000019359 magnesium stearate Nutrition 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
- C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L23/04—Homopolymers or copolymers of ethene
- C08L23/08—Copolymers of ethene
- C08L23/0846—Copolymers of ethene with unsaturated hydrocarbons containing atoms other than carbon or hydrogen
- C08L23/0853—Ethene vinyl acetate copolymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
- C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Conductive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The present invention relates to easily peelable semiconductive shieldin material, the raw material for having following mass parts is prepared from, 40-45 parts of EVA, 32-38 parts of conductive black, 5-8 parts of white oil, 2-5 parts of lubricant, 0.5-4 parts of dispersant, 0.1-0.5 part of antioxidant, 0.5-3 parts of crosslinking agent, 12-18 parts of caking inhibiter, trisiloxanes imidazole ion liquid surfactant are 0.6-0.8 part.The melt index of ethylene vinyl acetate copolymer is 5.5-6.3g/10min, softening point is less than 40 DEG C, the weight/mass percentage composition of total vinyl acetate is 25-35% in polymer, and caking inhibiter is nitrile rubber, and ionic liquid surfactant is trisiloxanes imidazole ion liquid surfactant.The present invention reduces the compatibility of shielding material and insulating layer material by adjusting the component that shielding is expected, and then reduces peel strength, and the peel strength that the application shielding is expected is 8-18 N/cm.
Description
Technical field
The invention belongs to semiconductive shieldin material technical field, and in particular to a kind of easily peelable semiconductive shieldin material and its preparation
Method.
Background technology
In the prior art, the peel strength of power cable semi-conductive insulation shield material is 18~40N/cm, such stripping
The construction requirement in common area can be still met from intensity, but still the cable construction of cold district, existing semiconductive can not be met
Insulation shielding material is mainly the addition in the base-material of polymer composites to be had the conductive black of certain electric conductivity, adds again
Enter other auxiliary materials to prepare, the vinyl-vinyl acetate copolymer for commonly using now exists and insulation displacement as base-material
Property difference problem, therefore develop and a kind of can still keep original performance at low temperature and while there is the electric power of relatively low peel strength
Cable with easily peelable semi-conductive insulation shield material, as urgent problem.
The content of the invention
The technical problems to be solved by the invention are directed to above-mentioned prior art and provide a kind of component simple easily peelable half
Conductive insulation shielding material and preparation method thereof, so as to reduce the peel strength of shielding material, reduces the work of cables manufacturing unit
Difficulty, improve production efficiency.
The present invention the used technical scheme that solves the above problems is：A kind of easily peelable semiconductive shieldin material, there is following matter
The raw material for measuring part is prepared from,
40-45 parts of EVA
32-38 parts of conductive black
5-8 parts of white oil
2-5 parts of lubricant
0.5-4 parts of dispersant
0.1-0.5 part of antioxidant
0.5-3 parts of crosslinking agent
12-18 parts of caking inhibiter
0.6-0.8 part of ionic liquid surfactant
The melt index of above-mentioned ethylene vinyl acetate copolymer is 5.5-6.3g/10min, and softening point is less than 40 DEG C, polymer
In the weight/mass percentage composition of total vinyl acetate be 25-35%, the caking inhibiter is nitrile rubber.
Above-mentioned conductive black uses Cabot XC200, and fineness is 300 mesh with thin, preferably 320 mesh.
Above-mentioned white oil uses 10# technical white oils.
Above-mentioned lubricant is paraffin.
Above-mentioned dispersant is stearates, Metallic stearates, such as odium stearate, zinc stearate, magnesium stearate.
Above-mentioned ionic liquid surfactant is trisiloxanes imidazole ion liquid surfactant.
It is another object of the invention to provide the preparation method of easily peelable semiconductive shieldin material, comprise the following steps：
Step one, by proportioning by EVA, conductive black, white oil, antioxidant, lubricant, dispersant and caking inhibiter according to proportioning plus
Enter in tipping bucket type kneading machine, closing mixing, melting temperature is 130~160 DEG C, the ripe glue of mixing；
Secondary mixing and granulation are carried out in step 2, the ripe glue that will be kneaded feeding reciprocating extruder, semi-conductive screen is made
Material, is filtered in comminutor gum outlet using twice；
Step 3, with pure water as cooling medium, cooling shielding material；
Step 4, centrifugal dehydration is carried out to the semiconductive shieldin material after cooling with cyclone, after it is secondary dry through airduct
It is dry；
Step 5, the good semiconductive shieldin material of redrying is added into high-speed mixer, add crosslinking agent infiltration, crosslinking agent is
DCP, is mixed；
Step 6, the semiconductive shieldin material for mixing step 5 enter sector-style and send and dry again by ebullated bed.
First filtering uses five layer of 200 mesh screen pack in twice filtering in step 2, and second filtering uses four layer 350
Mesh screen pack.
Compared with prior art, the advantage of the invention is that：The optimal content of vinylacetate should in the EVA of this materials'use
Control is higher in 28% or so, VA contents, its compatibility that insulating materials is chemically crosslinked with power cable is reduced, so as to subtract
Small peeling force.The conductive black of this materials'use, particle diameter is big, and cleanliness factor is high, peels off residual small.The nitrile rubber for being used is
Butadiene and acrylonitrile compolymer gained, due to the presence of highly polar CN groups, reduce shielding material and are handed over power cable chemistry
Join the compatibility of insulating materials.The present invention with the addition of trisiloxanes imidazole ion liquid surfactant in formula, make shielding
The interfacial tension of layer and insulating barrier becomes big, reduces the adhesion of screen layer and insulating barrier, makes screen layer easily peelable, reduces and peels off
Intensity.The peel strength of the semi-conductive insulation shield material with reference to obtained by above-mentioned each technical characteristic is final is 8-18N/cm.This material
Expect that raw materials used processing characteristics is good, component is simple, it is easy to process, and improves production efficiency, due to easily peelable performance,
Similarly improve the production efficiency of cable factory, it is easy to which production is implemented.
Brief description of the drawings
Fig. 1 is the process chart of semi-conductive screen preparation method for material of the present invention.
Specific embodiment
The present invention is described in further detail below in conjunction with accompanying drawing embodiment.
These embodiments are that, for illustrating general principle of the invention, principal character and advantage, the present invention does not receive following reality
Apply the limitation of example.Condition employed in embodiment can do adaptability or further adjustment according to specific requirement, not
Dated implementation condition is normal experiment conditional, and the part in the present embodiment is " mass parts ".
Embodiment 1
A kind of power cable with easily peelable semi-conductive insulation shield material A,
Step one, take Ethylene-vinyl acetate resin（EVA）40 parts, 320 36 parts of mesh conductive blacks (XC200), 300
Number 0.2 part of antioxidant, 6.5 parts of 10# technical white oils, 2 parts of paraffin, 0.6 part of zinc stearate, ionic liquid surfactant
（Trisiloxanes imidazole ion liquid surfactant）0.6 part, 15 parts of nitrile rubber is added in tipping bucket type kneading machine, melting temperature
It is 140 DEG C, closing mixing 8 minutes, the ripe glue of mixing.Wherein the melt index of ethene-ethyl acetate resin is 6g/
10min, ethyl acetate content is in 28% percentage by weight.
Step 2, the ripe glue that will be kneaded to be sent into and carry out secondary mixing and granulation on reciprocal staged extruder, is made half
Conductive shield material.It is the degree of purity and fineness of capital preservation product, is filtered using twice in comminutor gum outlet, first filtering is used
5 layer of 200 mesh screen pack, second filtering uses 4 layer of 350 mesh screen pack；
Step 3, with pure water as cooling medium, cooling shielding material, cooling water is reused after filtering.
Step 4, the semiconductive shieldin material after cooling is dehydrated with cyclone after, it is then secondary by 5 meters of airducts
Dry.To prevent because temperature is too high in mixing process, cause partly to lead to shield and expect to be crosslinked in advance.
Step 5, the good semiconductive shieldin material of redrying is added into super mixer, adds 2.6 parts of crosslink agent DCPs,
Mix 11 minutes at a temperature of 40 DEG C, make partly to lead to shield and expect mutually to absorb and permeate with crosslinking agent.
Step 6, the degree of purity to ensure semiconductive shieldin material again, the semiconductive shieldin material that will be mixed is again by boiling
Bed is risen, sector-style is entered again and is sent and is dried.
Embodiment 2
The present embodiment is with the difference of embodiment 1：Take 38 parts of Ethylene-vinyl acetate resin, 320 mesh conductive blacks
(XC200) 37 parts, No. 300 0.2 part of antioxidant, 6.6 parts of 10# technical white oils, 4 parts of paraffin, 0.5 part of zinc stearate,
Ionic liquid surfactant（Trisiloxanes imidazole ion liquid surfactant）0.6 part, 16 parts of nitrile rubber, crosslinking agent
2.6 parts.
Other steps are identical with specific embodiment 1
Embodiment 3
The present embodiment is with the difference of embodiment 1：Take 38 parts of Ethylene-vinyl acetate resin, 320 mesh conductive blacks
(XC200) 36 parts, No. 300 0.2 part of antioxidant, 6.6 parts of 10# technical white oils, 3 parts of paraffin, 0.5 part of zinc stearate, from
Sub- liquid surfactant（Trisiloxanes imidazole ion liquid surfactant）0.6 part, 17 parts of nitrile rubber, crosslinking agent 2.6
Part.
Other steps are identical with specific embodiment 1
The present invention by using cross-linked polyethylene insulated cable obtained in above-described embodiment with semiconductive shieldin material stripping rate 8-
Between 14N/cm.
Expressing technique is functional, and following table is easily peelable semi-conductive insulation shield material performance of the invention：
Upper table shows that the semiconductive shieldin material obtained by embodiment 1-3 has relatively low peel strength, with easily peelable characteristic,
And composition is simple, preparation method is not substantially complicated, but finer and ingenious.Present inventor is by composition
Adjust and to the further optimization of preparation technology, obtain a kind of easily peelable semiconductive of peel strength in 8-18 N/cm
Shielding material.
The above embodiments merely illustrate the technical concept and features of the present invention, its object is to allow person skilled in the art
Scholar will appreciate that present disclosure and be carried out that it is not intended to limit the scope of the present invention.It is all to be become using equivalent
Change or technical scheme that equivalence replacement mode is formed, all should fall within the scope of the hereto appended claims.
Claims (8)
1. a kind of easily peelable semiconductive shieldin material, it is characterised in that：The raw material for having following mass parts is prepared from,
40-45 parts of EVA
32-38 parts of conductive black
5-8 parts of white oil
2-5 parts of lubricant
0.5-4 parts of dispersant
0.1-0.5 part of antioxidant
0.5-3 parts of crosslinking agent
12-18 parts of caking inhibiter
0.6-0.8 part of trisiloxanes type ionic liquid surfactant
The melt index of above-mentioned ethylene vinyl acetate copolymer is 5.5-6.3g/10min, and softening point is less than 40 DEG C, polymer
In the weight/mass percentage composition of total vinyl acetate be 25-35%, the caking inhibiter is nitrile rubber.
2. easily peelable semiconductive shieldin material according to claim 1, it is characterised in that：The ionic liquid surfactant
It is trisiloxanes imidazole ion liquid surfactant.
3. easily peelable semiconductive shieldin material according to claim 1, it is characterised in that：The conductive black uses Cabot
XC200, fineness is 300 mesh with thin, preferably 320 mesh.
4. easily peelable semiconductive shieldin material according to claim 1, it is characterised in that：The white oil is white using 10# industry
Oil.
5. easily peelable semiconductive shieldin material according to claim 1, it is characterised in that：The lubricant is paraffin.
6. easily peelable semiconductive shieldin material according to claim 1, it is characterised in that：The dispersant is stearate
Class.
7. the preparation method of easily peelable semiconductive shieldin material described in a kind of claim 1, it is characterised in that：Comprise the following steps
Step one, by proportioning by EVA, conductive black, white oil, antioxidant, lubricant, dispersant and caking inhibiter according to proportioning plus
Enter in tipping bucket type kneading machine, closing mixing, melting temperature is 130~160 DEG C, the ripe glue of mixing；
Secondary mixing and granulation are carried out in step 2, the ripe glue that will be kneaded feeding reciprocating extruder, semi-conductive screen is made
Material, is filtered in comminutor gum outlet using twice；
Step 3, with pure water as cooling medium, cooling shielding material；
Step 4, centrifugal dehydration is carried out to the semiconductive shieldin material after cooling with cyclone, after it is secondary dry through airduct
It is dry；
Step 5, the good semiconductive shieldin material of redrying is added into high-speed mixer, add crosslinking agent infiltration, crosslinking agent is
DCP, is mixed；
Step 6, the semiconductive shieldin material for mixing step 5 enter sector-style and send and dry again by ebullated bed.
8. the preparation method of easily peelable semiconductive shieldin material according to claim 7, it is characterised in that：Twice in step 2
First filtering uses five layer of 200 mesh screen pack in filtering, and second filtering uses four layer of 350 mesh screen pack.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611036339.2A CN106750848A (en) | 2016-11-23 | 2016-11-23 | A kind of easily peelable semiconductive shieldin material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611036339.2A CN106750848A (en) | 2016-11-23 | 2016-11-23 | A kind of easily peelable semiconductive shieldin material and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106750848A true CN106750848A (en) | 2017-05-31 |
Family
ID=58971407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611036339.2A Pending CN106750848A (en) | 2016-11-23 | 2016-11-23 | A kind of easily peelable semiconductive shieldin material and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108794875A (en) * | 2018-06-08 | 2018-11-13 | 远东电缆有限公司 | A kind of cross-linked polyolefin cable peelable external shield material and preparation method |
| CN109251398A (en) * | 2018-07-06 | 2019-01-22 | 浙江万马高分子材料有限公司 | Semi-conductive shielding material for insulation and preparation method thereof |
| CN116478642A (en) * | 2023-04-24 | 2023-07-25 | 靖江市恒特胶粘制品有限公司 | Polymer material silica gel adhesive |
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| CN102898718A (en) * | 2011-07-27 | 2013-01-30 | 上海凯波特种电缆料厂有限公司 | Non-EVA-substrate cross-linked semi-conductive outer shield material used in 35KV cables, and preparation method thereof |
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2016
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| CN101942142A (en) * | 2010-08-16 | 2011-01-12 | 江阴市海江高分子材料有限公司 | Preparation method of semiconductive shielding material for 110kV and above voltage class cables |
| CN102898718A (en) * | 2011-07-27 | 2013-01-30 | 上海凯波特种电缆料厂有限公司 | Non-EVA-substrate cross-linked semi-conductive outer shield material used in 35KV cables, and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108794875A (en) * | 2018-06-08 | 2018-11-13 | 远东电缆有限公司 | A kind of cross-linked polyolefin cable peelable external shield material and preparation method |
| CN109251398A (en) * | 2018-07-06 | 2019-01-22 | 浙江万马高分子材料有限公司 | Semi-conductive shielding material for insulation and preparation method thereof |
| CN109251398B (en) * | 2018-07-06 | 2021-04-30 | 浙江万马高分子材料有限公司 | Semi-conductive shielding material for insulation and preparation method thereof |
| CN116478642A (en) * | 2023-04-24 | 2023-07-25 | 靖江市恒特胶粘制品有限公司 | Polymer material silica gel adhesive |
| CN116478642B (en) * | 2023-04-24 | 2023-10-24 | 靖江市恒特胶粘制品有限公司 | Polymer material silica gel adhesive |
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