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CN106749050B - It is a kind of using cyclic diketones as the hot activation delayed fluorescence OLED material of core and its application - Google Patents

It is a kind of using cyclic diketones as the hot activation delayed fluorescence OLED material of core and its application Download PDF

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CN106749050B
CN106749050B CN201611159423.3A CN201611159423A CN106749050B CN 106749050 B CN106749050 B CN 106749050B CN 201611159423 A CN201611159423 A CN 201611159423A CN 106749050 B CN106749050 B CN 106749050B
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delayed fluorescence
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CN106749050A (en
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高树坤
盛磊
张鑫鑫
胡葆华
陈晓晓
矫志
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Valiant Co Ltd
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Abstract

The invention discloses a kind of using cyclic diketones as the hot activation delayed fluorescence OLED material of core and its application, belongs to organic photoelectrical material technical field.It is with structure shown in formula I:The invention also discloses the applications of above-mentioned OLED material.OLED material of the invention is one kind using cyclic diketones as notable feature, and the organic micromolecule compound that nitrogen-containing heterocycle is constituted is connected by aromatic group, with suitable molecular entergy level, higher glass transition temperature, and there is apparent hot activation delayed fluorescence (TADF) characteristic, can be used as TADF material, be used to prepare the functional layer of organic electroluminescence device, especially luminescent layer is applied in field of organic electroluminescence.

Description

It is a kind of using cyclic diketones as the hot activation delayed fluorescence OLED material of core and its application
Technical field
The present invention relates to a kind of using cyclic diketones as the hot activation delayed fluorescence OLED material of core and its application, and belonging to has Machine optoelectronic materials technology.
Background technique
Currently, the commodity based on OLED display technology, have been carried out industrialization.Compared with liquid crystal type display technology, OLED Display technology has thin self-luminous, radiationless, light weight, thickness, wide viewing angle, wide colour gamut, colour stable, fast response time, ring Border adapts to many advantages, such as strong, achievable Flexible Displays, and therefore, OLED display technology is obtaining people and more and more paying close attention to With corresponding Technical investment.
The infrastructure element that OLED is shown is OLED device, and OLED device can be divided into glimmering according to the difference of luminous mechanism Optical device and two kinds of phosphorescent devices.Fluorescence 0LED based on singlet emitter its theoretic interior amount as first generation luminescent material Sub- efficiency only has 25%, can not further increase its efficiency;Phosphorescence 0LED is referred to as the second generation, and internal quantum efficiency can reach 100%.Although phosphor material passes through between being since the strong SO coupling in heavy atom center enhances, can efficiently use It is electrically excited the singlet exciton to be formed and Triplet exciton, makes the internal quantum efficiency of device up to 100%.But phosphor material is deposited It is limited in the problems such as expensive, stability of material is poor, and service life is short, and device efficiency tumbles seriously, and blue emitting phosphor is weak Its application in OLED.
2009, the Adachi professor of Kyushu University designed and synthesized a kind of carbazole Benzonitrile derivatives, then Have found that, based on triplet state-singlet transition hot activation delayed fluorescence (TADF) new material, internal quantum efficiency is close 100%, this kind of material is the third generation luminous organic material developed after organic fluorescence materials and organic phosphorescent material.Such Material generally has small singlet-triplet poor (△ EST), and triplet excitons can be transformed by anti-intersystem crossing Singlet exciton shines.This can make full use of the singlet exciton and triplet excitons that are electrically excited lower formation, the interior amount of device Sub- efficiency can achieve 100%.Meanwhile material structure is controllable, and property is stablized, and it is cheap to be not necessarily to precious metal, it is led in OLED Domain has a extensive future.But not clear, the limitation of material structure and the correlation of its photophysical property and device efficiency The exploitation of efficient delayed fluorescence material, causes existing TADF material category single, and the efficiency of device is lower, is unable to satisfy efficiently The requirement of Organic Light Emitting Diode.
During high efficiency electroluminous process usually requires that electronics returns ground state through excitation state radiation transistion, molecule frontier orbit Wave function have and be utmostly overlapped, overlapping degree is too small to accelerate intersystem crossing process, reduce luminous efficiency.It is partly led organic In body material, charge transfer process corresponds to the redox reaction between neutral molecule and corresponding zwitterion, electron donor list Member and electron acceptor unit are respectively provided with the property of transporting holes and electronics.In recent years, bipolar materials are because having the sky of balance Cave and electronic carrier stream are attract attention in electroluminescent device field, and the life that gradually moves towards the industrialization It produces.
It has been reported that the organic compound with TADF performance, be that there is apparent electron-donating group and inhale in structure Bipolarity organic micromolecule compound made of electron group direct or indirect connection.Novel TADF material undoubtedly has wide hair Exhibition prospect.
Summary of the invention
An object of the present invention is to provide a kind of using cyclic diketones as the hot activation delayed fluorescence OLED material of core. The compound of the present invention is applied to Organic Light Emitting Diode, the present invention using cyclic diketones as core, as luminescent layer material of main part The device of production has good photoelectric properties, can satisfy the requirement of panel manufacturing enterprise.
The technical scheme to solve the above technical problems is that a kind of postpone by the hot activation of core of cyclic diketones Fluorescence OLED material has structure shown in formula I:
Wherein, L is expressed as hexamethylene, pentamethylene or C1-C10Alkyl-substituted hexamethylene;Ar1Indicate C5-C30Aryl; Ar2Structure shown in selection formula II, formula III, formula IV or formula V:
Wherein, X is expressed as oxygen atom, sulphur atom, selenium atom, C1-C10The alkylidene or C that straight chained alkyl replaces1-C10Branch One of the tertiary amine groups that alkylidene, alkyl-substituted tertiary amine groups or the aryl that alkyl-substituted alkylidene, aryl replace replace.
Based on the above technical solution, the present invention can also be improved as follows.
Further, the Ar2Are as follows:
In appoint It is a kind of.Further, the concrete structure formula of the OLED material are as follows:
Any one of.
The second object of the present invention is to provide a kind of organic electroluminescence device.With common commercialization material of main part CBP It compares, the organic electroluminescence device made using material of the present invention, there is better current efficiency and longer device Service life.
The technical scheme to solve the above technical problems is that a kind of organic electroluminescence device, at least one layer of function Ergosphere contains above-mentioned using cyclic diketones as the hot activation delayed fluorescence OLED material of core.
Based on the above technical solution, the present invention can also be improved as follows.
Further, the functional layer is luminescent layer.
The beneficial effects of the present invention are:
1. the material is using cyclic diketones as notable feature, Ke Yizuo the present invention provides a kind of electroluminescent organic material For the material of main part with TADF property, apply in field of organic electroluminescence.
2. using material provided by the invention as functional layer, the organic electroluminescence device of production has preferable performance, It is characterized in that:
(1) present invention has been synthesized a kind of using cyclic diketones as the hot activation delayed fluorescence of core by the reaction such as coupling OLED material, and " D- π-A type " organic micromolecule compound that nitrogen-containing heterocycle is constituted, this kind of molecule tool are connected by aromatic group There are suitable molecular weight (400~900), wider energy gap (being in 2.5-3.5eV), with small singlet --- triplet state Energy level difference (i.e. △ EST, 0-0.2eV), higher glass transition temperature Tg (120 DEG C or more) are suitable as the layer main body that shines Material.
(2) molecular structure according to the present invention, electron donating group pass through suitable aryl with drawing electron group and connect, The configuration of this distortion increases the stereoeffect of entire molecule, the biography of the electronics and hole that are more advantageous in luminescent layer It leads and combines, be of great significance to current efficiency is improved.
(3) light emitting host material is made with such material, adulterates existing luminescent material GD-19, Ir (PPy) respectively3、GD- PACTZ has preferable performance as luminescent layer, prepared organic electroluminescence device, and maximum current efficiency is up to 33cd/ A, the LT95 service life are 13.0Hr.
3. compared with common commercialization material of main part CBP, the organic electroluminescent that is made using material of the present invention Device has better current efficiency and longer device lifetime.
4. compound-material of the present invention has good application effect in OLED luminescent device, there is good production Industry prospect.
Detailed description of the invention
Fig. 1 is the device architecture schematic diagram using the compounds of this invention.
Wherein, 1, transparent substrate layer, 2, ito anode layer, 3, hole injection layer, 4, hole transmission layer, 5, luminescent layer, 6, electricity Sub- transport layer, 7, electron injecting layer, 8, cathode reflection electrode layer.
Specific embodiment
Principles and features of the present invention are described below in conjunction with specific attached drawing, example is served only for explaining this hair It is bright, it is not intended to limit the scope of the present invention.
Embodiment 1: the preparation of compound C1
In 500mL there-necked flask, 2- (4- bromophenyl) hexamethylene -1,3- diketone (2.67g, 0.01mol), 5- benzene is added Base -5,10- dihydrophenazine (2.58g, 0.01mol), sodium tert-butoxide (2.88g, 0.03mol), dimethylbenzene (300mL), palladium acetate (0.074g) is warming up to reflux, insulation reaction 12h is down to room temperature, into reaction flask under Xantphos (0.348g), N2 protection 150mL deionized water is added, stirs 5min, liquid separation, 200mL deionized water is washed organic phase 2 times, and organic phase is collected, anhydrous Na2SO4 is dried, filtered, and sloughs solvent, and crude product crosses silica gel column chromatography purifying, and eluant, eluent is toluene: petroleum ether=1:2 is changed Close object C1, faint yellow solid 2.85g, yield 64.2%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C30H24N2O2, theoretical value 444.1838, test value 444.1667.Elemental analysis (C30H24N2O2), theoretical value C:81.06, H:5.44, N:6.30, O:7.20, measured value C:81.04, H:5.44, N:6.31, O:7.21.
Embodiment 2: the preparation of compound C4
The preparation method is the same as that of Example 1 by compound C4, the difference is that using the 5- benzene in 1 alternative embodiment 1 of raw material A Base -5,10- dihydrophenazine obtains compound C4, faint yellow solid 3.23g, yield 66.7%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C33H28N2O2, theoretical value 484.2151, test value 484.2331.Elemental analysis (C33H28N2O2), theoretical value C:81.79, H:5.83, N:5.78, O:6.60, measured value C:81.78, H:5.84, N:5.77, O:6.61.
Embodiment 3: the preparation of compound C7
The preparation method is the same as that of Example 1 by compound C7, the difference is that using the 5- benzene in 2 alternative embodiment 1 of raw material A Base -5,10- dihydrophenazine obtains compound C7, faint yellow solid 3.06g, yield 57.3%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C37H27NO3, theoretical value 533.1991, test value 533.1860.Elemental analysis (C37H27NO3), theoretical value C:83.28, H:5.10, N:2.62, O:8.99, measured value C:83.30, H:5.12, N:2.61, O:8.97.
Embodiment 4: the preparation of compound C18
The preparation method is the same as that of Example 1 by compound C18, the difference is that using raw material 2- (the bromo- 2' of 4'-, 5'- diformazan Base biphenyl -4- base) 2- (4- bromophenyl) hexamethylene -1,3- diketone in hexamethylene -1,3- diketone alternative embodiment 1, changed Close object C18, faint yellow solid 3.69g, yield 67.2%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C38H32N2O2, theoretical value 548.2464, test value 548.2410.Elemental analysis (C38H32N2O2), theoretical value C:83.18, H:5.88, N:5.11, O:5.83, measured value C:83.15, H:5.89, N:5.12, O:5.84.
Embodiment 5: the preparation of compound C27
The preparation method is the same as that of Example 1 by compound C27, the difference is that using raw material 2- (the bromo- 1- naphthalene of 4-) hexamethylene 2- (4- bromophenyl) hexamethylene -1,3- diketone in alkane -1,3- diketone alternative embodiment 1, obtains compound C27, pale yellow colored solid Body 3.79g, yield 76.6%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C34H26N2O2, theoretical value 494.1994, test value 494.1871.Elemental analysis (C34H26N2O2), theoretical value C:82.57, H:5.30, N:5.66, O:6.47, measured value C:82.55, H:5.30, N:5.67, O:6.48.
Embodiment 6: the preparation of compound C31
The preparation method is the same as that of Example 1 by compound C31, the difference is that using raw material 2- (4- bromophenyl) pentamethylene- 2- (4- bromophenyl) hexamethylene -1,3- diketone in 1,3- diketone alternative embodiment 1, obtains compound C31, faint yellow solid 3.09g, yield 71.7%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C29H22N2O2, theoretical value 430.1681, test value 430.1770.Elemental analysis (C29H22N2O2), theoretical value C:80.91, H:5.15, N:6.51, O:7.43, measured value C:80.93, H:5.14, N:6.51, O:7.42.
Embodiment 7: the preparation of compound C37
The preparation method of compound C37 is with embodiment 3, the difference is that using raw material 2- (4- bromophenyl) pentamethylene- 2- (4- bromophenyl) hexamethylene -1,3- diketone in 1,3- diketone alternative embodiment 1, obtains compound C37, faint yellow solid 3.31g, yield 63.8%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C36H25NO3, theoretical value 519.1834, test value 519.1760.Elemental analysis (C36H25NO3), theoretical value C:83.22, H:4.84, N:2.70, O:9.24, measured value C:83.20, H:4.85, N:2.70, O:9.25.
Embodiment 8: the preparation of compound C40
The preparation method of compound C40 is with embodiment 6, the difference is that using the 5- in 3 alternative embodiment 1 of raw material A Phenyl -5,10- dihydrophenazine obtains compound C40, faint yellow solid 3.73g, yield 79.2%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C32H25NO3, theoretical value 471.1834, test value 471.1622.Elemental analysis (C32H25NO3), theoretical value C:81.51, H:5.34, N:2.97, O:10.18, measured value C:81.52, H:5.33, N:2.98, O:10.17.
Embodiment 9: the preparation of compound C57
The preparation method is the same as that of Example 1 by compound C57, the difference is that using raw material 2- (the bromo- 1- naphthalene of 4-) ring penta 2- (4- bromophenyl) hexamethylene -1,3- diketone in alkane -1,3- diketone alternative embodiment 1, obtains compound C57, pale yellow colored solid Body 3.29g, yield 68.5%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C33H24N2O2, theoretical value 480.1838, test value 480.1668.Elemental analysis (C33H24N2O2), theoretical value C:82.48, H:5.03, N:5.83, O:6.66, measured value C:82.46, H:5.04, N:5.82, O:6.68.
Embodiment 10: the preparation of compound C67
The preparation method is the same as that of Example 1 by compound C67, the difference is that using raw material 2- (4- bromophenyl) -5,5- bis- 2- (4- bromophenyl) hexamethylene -1,3- diketone in hexahydrotoluene -1,3- diketone alternative embodiment 1, obtains compound C67, Faint yellow solid 3.33g, yield 70.4%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C32H28N2O2, theoretical value 472.2151, test value 472.2251.Elemental analysis (C32H28N2O2), theoretical value C:81.33, H:5.97, N:5.93, O:6.77, measured value C:81.32, H:5.98, N:5.92, O:6.78.
Embodiment 11: the preparation of compound C68
The preparation method is the same as that of Example 10 by compound C68, the difference is that using in 4 alternative embodiment 10 of raw material A 5- phenyl -5,10- dihydrophenazine obtains compound C68, faint yellow solid 3.59g, yield 73.7%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C32H26N2O3, theoretical value 486.1943, test value 486.1825.Elemental analysis (C32H26N2O3), theoretical value C:78.99, H:5.39, N:5.76, O:9.86, measured value C:78.98, H:5.37, N:5.78, O:9.87.
Embodiment 12: the preparation of compound C70
The preparation method is the same as that of Example 10 by compound C70, the difference is that using in 1 alternative embodiment 10 of raw material A 5- phenyl -5,10- dihydrophenazine obtains compound C70, faint yellow solid 3.74g, yield 72.9%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C35H32N2O2, theoretical value 512.2464, test value 512.2335.Elemental analysis (C35H32N2O2), theoretical value C:82.00, H:6.30, N:5.46, O:6.24, measured value C:82.02, H:6.31, N:5.45, O:6.22.
Embodiment 13: the preparation of compound C72
The preparation method is the same as that of Example 10 by compound C72, the difference is that using in 5 alternative embodiment 10 of raw material A 5- phenyl -5,10- dihydrophenazine obtains compound C72, faint yellow solid 3.55g, yield 63.2%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C38H31N3O2, theoretical value 561.2416, test value 561.2337.Elemental analysis (C38H31N3O2), theoretical value C:81.26, H:5.56, N:7.48, O:5.70, measured value C:81.24, H:5.55, N:7.49, O:5.72.
Embodiment 14: the preparation of compound C73
The preparation method is the same as that of Example 10 by compound C73, the difference is that using in 2 alternative embodiment 10 of raw material A 5- phenyl -5,10- dihydrophenazine obtains compound C73, faint yellow solid 3.76g, yield 66.9%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C39H31NO3, theoretical value 561.2304, test value 561.2213.Elemental analysis (C39H31NO3), theoretical value C:83.40, H:5.56, N:2.49, O:8.55, measured value C:83.42, H:5.56, N:2.49, O:8.53.
Embodiment 15: the preparation of compound C74
The preparation method is the same as that of Example 10 by compound C74, the difference is that using in 6 alternative embodiment 10 of raw material A 5- phenyl -5,10- dihydrophenazine obtains compound C74, faint yellow solid 3.65g, yield 62.1%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C42H37NO2, theoretical value 587.2824, test value 587.2775.Elemental analysis (C42H37NO2), theoretical value C:85.83, H:6.35, N:2.38, O:5.44, measured value C:85.85, H:6.33, N:2.39, O:5.43.
Embodiment 16: the preparation of compound C92
The preparation method is the same as that of Example 12 by compound C92, the difference is that using raw material 2- (the bromo- 1- naphthalene of 4-) -5, 2- (4- bromophenyl) -5,5- dimethyl cyclohexane -1,3- two in 5- dimethyl cyclohexane -1,3- diketone alternative embodiment 10 Ketone obtains compound C92, faint yellow solid 4.24g, yield 75.3%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C39H34N2O2, theoretical value 562.2620, test value 562.2517.Elemental analysis (C39H34N2O2), theoretical value C:83.24, H:6.09, N:4.98, O:5.69, measured value C:83.26, H:6.07, N:4.99, O:5.68.
Embodiment 17: the preparation of compound C97
The preparation method of compound C97 is with embodiment 8, the difference is that using the A3 in 7 alternative embodiment 8 of raw material A, Obtain compound C97, faint yellow solid 3.54g, yield 71.2%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C35H31NO2, theoretical value 497.2355, test value 497.2357.Elemental analysis (C35H31NO2), theoretical value C, 84.48;H,6.28;N,2.81;O, 6.43, measured value C:84.46, H:6.17, N:2.89, O:6.48.
Embodiment 18: the preparation of compound C98
The preparation method of compound C98 is with embodiment 8, the difference is that using the A3 in 8 alternative embodiment 8 of raw material A, Obtain compound C98, faint yellow solid 3.85g, yield 70.5%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C38H30N2O2, theoretical value 546.2307, test value 546.2309.Elemental analysis (C38H30N2O2), theoretical value C, 83.49;H, 5.53;N, 5.12;O, 5.85, measured value C:83.46, H:5.57, N:5.13, O:5.84.
Embodiment 19: the preparation of compound C100
The preparation method is the same as that of Example 17 by compound C100, the difference is that using the raw material 2- (bromo- biphenyl -3- of 4'- Base) 2- (4'- bromobenzene)-pentamethylene -1,3- diketone in-pentamethylene -1,3- diketone alternative embodiment 17, obtain compound C100, faint yellow solid 2.63g, yield 45.9%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C41H35NO2, theoretical value 573.2668, test value 573.2672.Elemental analysis (C41H35NO2), theoretical value C, 85.83;H,6.15;N,2.44;O, 5.58, measured value C:85.76, H:6.15, N:2.38, O:5.71.
Embodiment 20: the preparation of compound C103
The preparation method is the same as that of Example 18 by compound C103, the difference is that using the raw material 2- (bromo- biphenyl -3- of 4'- Base) 2- (4'- bromobenzene)-pentamethylene -1,3- diketone in-pentamethylene -1,3- diketone alternative embodiment 17, obtain compound C103, faint yellow solid 4.10g, yield 66.0%.
High resolution mass spectrum, the source ESI, positive ion mode, molecular formula C44H34N2O2, theoretical value 622.2620, test value 622.2623.Elemental analysis (C44H34N2O2), theoretical value C, 84.86;H,5.50;N,4.50;O, 5.14, measured value C, 84.79; H,5.52;N,4.54;O,5.15.
The 21-28 and comparative example 1-3 compound conduct in the devices that the present invention will be described in detail synthesizes by the following examples The application effect of luminescent layer material of main part.Embodiment 22-28 of the present invention, comparative example 1-3 device compared with embodiment 21 The manufacture craft of part is identical, and uses identical baseplate material and electrode material, and the film thickness of electrode material is also protected It holds unanimously, except that being converted to the luminescent layer material of main part in device.The structure composition of device is as shown in table 2;Institute The test result for obtaining device is shown in Table 3.
Embodiment 21
Transparent substrate layer 1/ITO anode layer 2/ hole injection layer 3 (molybdenum trioxide MoO3, thickness 10nm)/hole transmission layer 4 (weight ratio blending of the compound C7 and GD-19 according to 100:5, thickness the 30nm)/electronics of (TAPC, thickness 80nm)/luminescent layer 5 passes Defeated 6 (TPBI, thickness 40nm)/electron injecting layer of layer, 7 (LiF, thickness 1nm)/negative electrode layer 8 (Al).The molecule of each compound Structural formula is as follows:
Specific preparation process is as follows:
Transparent substrate layer 1 uses transparent material, such as glass;Ito anode layer 2 (film thickness 150nm) is washed, i.e., according to Ultraviolet-ozone washing is carried out after secondary progress neutralizing treatment, pure water, drying again to remove the organic residue on the transparent surface ITO Object.
On having carried out the ito anode layer 2 after above-mentioned washing, using vacuum deposition apparatus, it is 10nm's that film thickness, which is deposited, Molybdenum trioxide MoO3 is used as hole injection layer 3.And then the TAPC of 80nm thickness is deposited as hole transmission layer 4.
After above-mentioned hole mobile material vapor deposition, the luminescent layer 5 of OLED luminescent device is made, structure includes OLED hair The used material compound C7 of photosphere 5 is as material of main part, and for GD-19 as dopant material, dopant material doping ratio is 5% weight Ratio is measured, luminescent layer film thickness is 30nm.
After above-mentioned luminescent layer 5, continuation vacuum evaporation electron transport layer materials are TPBI, the vacuum evaporation coating of the material Thickness is 40nm, this layer is electron transfer layer 6.
On electron transfer layer 6, by vacuum deposition apparatus, lithium fluoride (LiF) layer that film thickness is 1nm is made, this layer is Electron injecting layer 7.
On electron injecting layer 7, by vacuum deposition apparatus, aluminium (Al) layer that film thickness is 80nm is made, this layer is cathode Reflection electrode layer 8 uses.
After completing OLED luminescent device as described above, anode and cathode is connected with well known driving circuit, is surveyed The I-E characteristic of the luminous efficiency of metering device, luminescent spectrum and device.
Embodiment 22
Transparent substrate layer 1/ITO anode layer 2/ hole injection layer 3 (molybdenum trioxide MoO3, thickness 10nm)/hole transmission layer 4 (TAPC, thickness 80nm)/luminescent layer 5 (weight ratio blending of the compound C40 and GD-19 according to 100:5, thickness 30nm)/electronics Transport layer 6 (TPBI, thickness 40nm)/electron injecting layer 7 (LiF, thickness 1nm)/negative electrode layer 8 (Al).
Embodiment 23
Transparent substrate layer 1/ITO anode layer 2/ hole injection layer 3 (molybdenum trioxide MoO3, thickness 10nm)/hole transmission layer 4 (TAPC, thickness 80nm)/luminescent layer 5 (weight ratio blending of the compound C73 and Ir (PPy) 3 according to 100:10, thickness 30nm)/ Electron transfer layer 6 (TPBI, thickness 40nm)/electron injecting layer 7 (LiF, thickness 1nm)/negative electrode layer 8 (Al).
Embodiment 24
Transparent substrate layer 1/ITO anode layer 2/ hole injection layer 3 (molybdenum trioxide MoO3, thickness 10nm)/hole transmission layer 4 (TAPC, thickness 80nm)/luminescent layer 5 (weight ratio blending of the compound C97 and Ir (PPy) 3 according to 100:10, thickness 30nm)/ Electron transfer layer 6 (TPBI, thickness 40nm)/electron injecting layer 7 (LiF, thickness 1nm)/negative electrode layer 8 (Al).
Embodiment 25
Transparent substrate layer 1/ITO anode layer 2/ hole injection layer 3 (molybdenum trioxide MoO3, thickness 10nm)/hole transmission layer 4 (TAPC, thickness 80nm)/luminescent layer 5 (weight ratio blending of the compound C98 and GD-PACTZ according to 100:5, thickness 30nm)/electricity Sub- 6 (TPBI, thickness 40nm)/electron injecting layer of transport layer, 7 (LiF, thickness 1nm)/negative electrode layer 8 (Al).
Embodiment 26
Transparent substrate layer 1/ITO anode layer 2/ hole injection layer 3 (molybdenum trioxide MoO3, thickness 10nm)/hole transmission layer 4 (TAPC, thickness 80nm)/luminescent layer 5 (weight ratio blending of the compound C100 and GD-PACTZ according to 100:5, thickness 30nm)/ Electron transfer layer 6 (TPBI, thickness 40nm)/electron injecting layer 7 (LiF, thickness 1nm)/negative electrode layer 8 (Al).
Embodiment 27
Transparent substrate layer 1/ITO anode layer 2/ hole injection layer 3 (molybdenum trioxide MoO3, thickness 10nm)/hole transmission layer 4 (TAPC, thickness 80nm)/luminescent layer 5 (compound C103, GH-204 and Ir (PPy) 3 according to 70:30:10 weight ratio blending, Thickness 30nm)/electron transfer layer 6 (TPBI, thickness 40nm)/electron injecting layer 7 (LiF, thickness 1nm)/negative electrode layer 8 (Al)。
Embodiment 28
Transparent substrate layer 1/ITO anode layer 2/ hole injection layer 3 (molybdenum trioxide MoO3, thickness 10nm)/hole transmission layer 4 (TAPC, thickness 80nm)/luminescent layer 5 (the weight ratio blending of compound C40, GH-204 and GD-PACTZ according to 70:30:5, thickness Spend 30nm)/electron transfer layer 6 (TPBI, thickness 40nm)/electron injecting layer 7 (LiF, thickness 1nm)/negative electrode layer 8 (Al).
Comparative example 1
Transparent substrate layer 1/ITO anode layer 2/ hole injection layer 3 (molybdenum trioxide MoO3, thickness 10nm)/hole transmission layer 4 (TAPC, thickness 80nm)/luminescent layer 5 (the weight ratio blending of CBP and GD-19 according to 100:5, thickness 30nm)/electron transfer layer 6 (TPBI, thickness 40nm)/electron injecting layer 7 (LiF, thickness 1nm)/negative electrode layer 8 (Al).
Comparative example 2
Transparent substrate layer 1/ITO anode layer 2/ hole injection layer 3 (molybdenum trioxide MoO3, thickness 10nm)/hole transmission layer 4 (the weight ratio blending of CBP and Ir (PPy) 3 according to 100:10, thickness the 30nm)/electronics of (TAPC, thickness 80nm)/luminescent layer 5 passes Defeated 6 (TPBI, thickness 40nm)/electron injecting layer of layer, 7 (LiF, thickness 1nm)/negative electrode layer 8 (Al).
Comparative example 3
Transparent substrate layer 1/ITO anode layer 2/ hole injection layer 3 (molybdenum trioxide MoO3, thickness 10nm)/hole transmission layer 4 (TAPC, thickness 80nm)/luminescent layer 5 (the weight ratio blending of CBP and GD-PACTZ according to 100:5, thickness 30nm)/electron-transport Layer 6 (TPBI, thickness 40nm)/electron injecting layer, 7 (LiF, thickness 1nm)/negative electrode layer 8 (Al).
The device architecture of made OLED luminescent device is shown in Table 1, and the test result of made OLED luminescent device is shown in Table 2.
The device architecture of OLED luminescent device made by table 1
The test result of OLED luminescent device made by table 2
Illustrate: the current efficiency of comparative example 1 is 6.5cd/A (@10mA/cm2);Starting voltage is 4.3V (@1cd/m2), LT95 life time decay is 3.8Hr under 5000nit brightness.The current efficiency of comparative example 2 is 24.6cd/A (@10mA/cm2); LT95 life time decay is 4.3Hr under 5000nit brightness.The current efficiency of comparative example 3 is 25.1cd/A (@10mA/cm2);Starting Voltage is 3.5V (@1cd/m2), and LT95 life time decay is 7.8Hr under 5000nit brightness.
Compound of the present invention can shine as luminescent layer material of main part using with OLED from the results shown in Table 2 Element manufacturing, and compared with comparative example 1-3, either efficiency or service life obtain larger change than known OLED material, Especially the driving service life of device obtains biggish promotion.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.

Claims (4)

1. a kind of using cyclic diketones as the hot activation delayed fluorescence OLED material of core, which is characterized in that have and tied shown in formula I Structure:
Wherein, L is expressed as hexamethylene, pentamethylene or C1-C10Alkyl-substituted hexamethylene;Ar1Indicate C5-C30Aryl;Ar2Are as follows:
Any one of.
2. a kind of using cyclic diketones as the hot activation delayed fluorescence OLED material of core, which is characterized in that the OLED material Concrete structure formula are as follows:
Any one of.
3. a kind of organic electroluminescence device, which is characterized in that at least one functional layer contains any one of claim 1-2 institute State using cyclic diketones as the hot activation delayed fluorescence OLED material of core.
4. a kind of organic electroluminescence device according to claim 3, which is characterized in that the functional layer is luminescent layer.
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