CN106747445A - A kind of high-performance composite polycrystal-diamond - Google Patents
A kind of high-performance composite polycrystal-diamond Download PDFInfo
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- CN106747445A CN106747445A CN201611111580.7A CN201611111580A CN106747445A CN 106747445 A CN106747445 A CN 106747445A CN 201611111580 A CN201611111580 A CN 201611111580A CN 106747445 A CN106747445 A CN 106747445A
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 44
- 239000010432 diamond Substances 0.000 title claims abstract description 44
- 239000002131 composite material Substances 0.000 title claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000843 powder Substances 0.000 claims abstract description 21
- 239000000047 product Substances 0.000 claims abstract description 17
- 235000013312 flour Nutrition 0.000 claims abstract description 15
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 239000000956 alloy Substances 0.000 claims abstract description 10
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 10
- 150000004820 halides Chemical class 0.000 claims abstract description 8
- 238000005087 graphitization Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000012467 final product Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims description 13
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 8
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims description 4
- 239000001103 potassium chloride Substances 0.000 claims description 4
- 235000011164 potassium chloride Nutrition 0.000 claims description 4
- 239000011780 sodium chloride Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 3
- 240000006409 Acacia auriculiformis Species 0.000 claims 1
- 230000026030 halogenation Effects 0.000 claims 1
- 238000005658 halogenation reaction Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000008187 granular material Substances 0.000 abstract description 3
- 230000035939 shock Effects 0.000 abstract description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000007767 bonding agent Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
- C04B35/528—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
- C04B2235/427—Diamond
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/428—Silicon
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/444—Halide containing anions, e.g. bromide, iodate, chlorite
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
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- Carbon And Carbon Compounds (AREA)
Abstract
The present invention relates to a kind of high-performance composite polycrystal-diamond, belong to diamond compact field.The high-performance composite polycrystal-diamond is prepared from by the method for comprising the following steps：1) bortz powder under vacuum, is incubated 30~120min at 750 DEG C~1500 DEG C, micro- graphitized products are obtained；2) to adding silica flour, halide to be well mixed in micro- graphitized products, compound is obtained；3) compound is placed on hard alloy substrate, then pressure be 5~8GPa, temperature be 1400~2000 DEG C at sinter, obtain final product.The high-performance composite polycrystal-diamond that the present invention is provided; micro- graphitization reaction is carried out to bortz powder first; silica flour, halide is added to be well mixed; and by controlling reaction condition; nano SiC granule or whisker are internally formed in polycrystalline diamond layer, so as to improve the heat endurance of composite polycrystal-diamond, shock resistance and anti-wear performance.
Description
Technical field
The present invention relates to a kind of high-performance composite polycrystal-diamond.
Background technology
Polycrystalline diamond (PCD) is the composite wood sintered under high temperature and high pressure environment by bortz powder and bonding agent
Material.The hardness of PCD material is the several times of hard alloy, close to the hardness of diamond single crystal, with good wearability and toughness,
Also there is isotropism simultaneously, the product of different sizes and shapes is can be made into, the application field of carbonado expanded significantly,
It has been widely used in the fields such as the probing of geology and mineral products, the processing of nonmetallic materials and coloured golden cutting.
Liu Lei etc. (diamond and grinding materials and grinding tool engineering, in August, 2015, the 4th phase) have studied silicon titanium bonding agent glomerocryst Buddha's warrior attendant
The preparation of stone and performance, its with granularity be respectively 25 μm and 10 μm bortz powder and bonding agent Si-Ti-B powder as raw material,
In 85MPa after batch mixing, silicon titanium bonding agent polycrystalline diamond is synthesized under 3.0~3.8kW.The synthesis of conventional polycrystalline diamond is led to more
Species and consumption preferably in combination with agent is crossed to improve the parameter such as heat resistance or wear resistance ratio of polycrystalline diamond, but polycrystalline diamond
The combination properties such as heat endurance, shock resistance, anti-wear performance are difficult to be taken into account, and are restricted in actual applications.
The content of the invention
It is an object of the invention to provide a kind of high-performance composite polycrystal-diamond, it has good heat endurance, resists
Impact and anti-wear performance.
In order to realize purpose, the technical solution adopted in the present invention is：
A kind of high-performance composite polycrystal-diamond, is prepared from by the method for comprising the following steps：
1) bortz powder under vacuum, is incubated 30~120min at 750 DEG C~1500 DEG C, micro- graphitization is obtained
Product；
2) to adding silica flour, halide to be well mixed in micro- graphitized products, compound is obtained；
3) compound is placed on hard alloy substrate, then pressure be 5~8GPa, temperature be 1400~2000 DEG C at
Sintering, obtains final product.
The high-performance composite polycrystal-diamond that the present invention is provided, carries out micro- graphitization reaction to bortz powder first, then
By adding silica flour, halide and controlling reaction condition, nano SiC granule or whisker are internally formed in polycrystalline diamond layer, received
On the one hand rice SiC particulate or silicon carbide whisker can play obstruction Crack Extension；On the other hand space between diamond can be filled,
Form chemical bond between diamond, bridging diamond, while SiC has an anti-oxidation characteristics high, nano SiC granule or whisker
In the presence of the heat endurance, wearability and the shock resistance that improve diamond compact.
Step 1) in, the vacuum of the vacuum condition is 1 × 10-3~1 × 10-5Pa。
The particle diameter of the bortz powder is 0.1~40 μm.The bortz powder be by diamond particles it is purified after obtain
's.The purification is washed using acid, alkali or acetone.
Acid is one or more mixing in the concentrated sulfuric acid, concentrated hydrochloric acid, concentrated nitric acid；Alkali is concentrated ammonia liquor, sodium hydroxide solution, double
One or more mixing in oxygen water, hypochlorous acid.It is miscellaneous that purification process can remove the moisture of diamond particle surfaces, oxide etc.
Matter.
Step 2) in, the addition of silica flour is the 1%~10% of micro- graphitized products quality, and the addition of halide is micro-
The 0.5%~3% of graphitized products quality.
Preferably, the particle diameter of the silica flour is 50nm~10 μm.The halide is in sodium chloride, potassium chloride, iron chloride
One or more mixing.
Step 3) in, the hard alloy substrate is that the mass content of cobalt is 13%~20% containing cobalt hard alloy.Sintering
When, it is incubated 5~40min at 1400~2000 DEG C.
High-performance composite polycrystal-diamond of the invention, raw material is simple and easy to get, and preparation process is easily controllable, without
Increase manufacturing facilities, low production cost, gained polycrystalline diamond combination property is good, be adapted to large-scale promotion application.
Specific embodiment
With reference to specific embodiment, the invention will be further described.In following examples, dense sulphur used by purification process
The mass concentration of acid is 98%, and concentrated hydrochloric acid mass concentration is 37%, and concentrated nitric acid mass concentration is 65%, and concentrated ammonia liquor mass concentration is
25%, sodium hydroxide solution mass concentration is 40%, and hydrogen peroxide mass concentration is 30%, and hypochlorous acid mass concentration is 40%.Silicon
The particle diameter of powder is 50nm~10 μm.
Embodiment 1
The high-performance composite polycrystal-diamond of the present embodiment, is prepared from by the method for comprising the following steps：
1) diamond particles are washed with the concentrated sulfuric acid, is dried, obtain bortz powder；The particle diameter of bortz powder be 0.1 μm~
30μm；
2) bortz powder is placed in high vacuum furnace, is 8 × 10 in vacuum-4Pa, temperature is insulation at 900 DEG C
120min, obtains micro- graphitized products；
3) to added in micro- graphitized products silica flour, sodium chloride (silica flour, sodium chloride addition be respectively micro- graphitization and produce
Amount of substance 5%, 0.6%) be well mixed, obtain compound；
4) compound is placed on the hard alloy substrate that Co mass contents are 13%, is then 7GPa, temperature in pressure
To sinter 12min at 1750 DEG C, obtain final product.
Embodiment 2
The high-performance composite polycrystal-diamond of the present embodiment, is prepared from by the method for comprising the following steps：
1) diamond particles are washed with concentrated ammonia liquor, is dried, obtain bortz powder；The particle diameter of bortz powder be 0.1 μm~
30μm；
2) bortz powder is placed in high vacuum furnace, is 5 × 10 in vacuum-4Pa, temperature is insulation at 1100 DEG C
90min, obtains micro- graphitized products；
3) to added in micro- graphitized products silica flour, potassium chloride (silica flour, potassium chloride addition be respectively micro- graphitization and produce
Amount of substance 7%, 0.7%) be well mixed, obtain compound；
4) compound is placed on the hard alloy substrate that Co mass contents are 16%, is then 7.5GPa, temperature in pressure
Spend to sinter 10min at 1800 DEG C, obtain final product.
Embodiment 3
The high-performance composite polycrystal-diamond of the present embodiment, is prepared from by the method for comprising the following steps：
1) diamond particles are washed with acetone, is dried, obtain bortz powder；The particle diameter of bortz powder is 5 μm~35 μm；
2) bortz powder is placed in high vacuum furnace, is 5 × 10 in vacuum-4Pa, temperature is insulation at 1200 DEG C
30min, obtains micro- graphitized products；
3) to added in micro- graphitized products silica flour, iron chloride (silica flour, iron chloride addition be respectively micro- graphitization and produce
Amount of substance 10%, 1%) be well mixed, obtain compound；
4) compound is placed on the hard alloy substrate that Co mass contents are 16%, is then 8GPa, temperature in pressure
To sinter 6min at 1900 DEG C, obtain final product.
In other embodiments of the invention, purification process can use concentrated hydrochloric acid, concentrated nitric acid, sodium hydroxide solution, dioxygen
Water or hypochlorous acid, using technological parameter same as Example 1, can the suitable composite polycrystal-diamond of processability.
Claims (8)
1. a kind of high-performance composite polycrystal-diamond, it is characterised in that be prepared from by the method for comprising the following steps：
1) bortz powder under vacuum, is incubated 30~120min at 750 DEG C~1500 DEG C, micro- graphitization is obtained and is produced
Thing；
2) to adding silica flour, halide to be well mixed in micro- graphitized products, compound is obtained；
3) compound is placed on hard alloy substrate, then pressure be 5~8GPa, temperature be 1400~2000 DEG C at burn
Knot, obtains final product.
2. high-performance composite polycrystal-diamond as claimed in claim 1, it is characterised in that step 1) in, the vacuum bar
The vacuum of part is 1 × 10-3~1 × 10-5Pa。
3. high-performance composite polycrystal-diamond as claimed in claim 1, it is characterised in that step 1) in, the diamond
The particle diameter of powder is 0.1~40 μm.
4. high-performance composite polycrystal-diamond as claimed in claim 1, it is characterised in that step 2) in, the silica flour
Particle diameter is 50nm~10 μm.
5. high-performance composite polycrystal-diamond as claimed in claim 1, it is characterised in that step 2) in, the addition of silica flour
It is the 1%~10% of micro- graphitized products quality to measure, and the addition of halide is the 0.5%~3% of micro- graphitized products quality.
6. the high-performance composite polycrystal-diamond as described in claim 1 or 5, it is characterised in that step 2) in, the halogenation
Thing is one or more mixing in sodium chloride, potassium chloride, iron chloride.
7. high-performance composite polycrystal-diamond as claimed in claim 1, it is characterised in that step 3) in, the hard is closed
Auri body is that the mass content of cobalt is 13%~20% containing cobalt hard alloy.
8. high-performance composite polycrystal-diamond as claimed in claim 1, it is characterised in that step 3) in, during sintering,
1400~2000 DEG C of 5~40min of insulation.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113735583A (en) * | 2021-10-27 | 2021-12-03 | 河南联合精密材料股份有限公司 | Novel diamond/silicon carbide composite ceramic and preparation method thereof |
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- 2016-12-06 CN CN201611111580.7A patent/CN106747445B/en active Active
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| CN113735583A (en) * | 2021-10-27 | 2021-12-03 | 河南联合精密材料股份有限公司 | Novel diamond/silicon carbide composite ceramic and preparation method thereof |
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