CN106711023A - III-group nitride substrate and preparation method thereof - Google Patents
III-group nitride substrate and preparation method thereof Download PDFInfo
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- CN106711023A CN106711023A CN201611247209.3A CN201611247209A CN106711023A CN 106711023 A CN106711023 A CN 106711023A CN 201611247209 A CN201611247209 A CN 201611247209A CN 106711023 A CN106711023 A CN 106711023A
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- nitride substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 150000004767 nitrides Chemical class 0.000 title abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000005520 cutting process Methods 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 17
- 238000005498 polishing Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000013467 fragmentation Methods 0.000 description 3
- 238000006062 fragmentation reaction Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001657 homoepitaxy Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides an III-group nitride substrate, wherein roughness between an III-group element surface and a nitrogen surface of the substrate is smaller than 0.2 nm. The invention further provides a preparation method of the III-group nitride substrate, and the preparation method comprises the following steps: providing the III-group nitride substrate formed by epitaxial growth; cutting the substrate in a direction parallel to the epitaxial growth surface of the substrate to obtain a cut substrate slice with the epitaxial growth surface; and taking the substrate slice, and removing a surface damage layer formed by cutting on the cut surface.
Description
Technical field
The present invention relates to field of semiconductor materials, more particularly to a kind of group III-nitride substrate and preparation method thereof.
Background technology
The epitaxial growth of the III-nitride materials such as GaN is preferably using the self-supported substrate of homogeneity.But self-supported substrate
It is expensive, limit this substrate and be used widely.Because self-supported substrate is typically with the fast-growth hand such as HVPE
What section was obtained, therefore thickness is generally even thicker in 500 microns.If can be thinning by its, it is possible to obtain multi-disc lining
Bottom, so as to reduce the cost per a piece of substrate.But the substrate mechanical strength reduction after thinning, causes easy fragmentation.Therefore, how
The mechanical strength of the group III-nitride substrate for extension is improved, is prior art problem demanding prompt solution.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of substrate of high mechanical properties and improve for extension
The method of the mechanical strength of group III-nitride substrate.
In order to solve the above problems, the invention provides a kind of group III-nitride substrate, the group-III element of the substrate
Roughness between face and nitrogen face is respectively less than 0.2nm.
In general, the group-III element face or nitrogen face of group III-nitride substrate are the basis of further extension, surface
By abrasive polishing process, all of damage layer is eliminated.One side is due to that need not carry out follow-up outer elongation growth, one in addition
As accomplish optical grade polishing or grind there is certain damage layer.At the same time, there are a large amount of crystal in damage layer to lack
Fall into, it will cause the generation of surface stress.By the removal to above-mentioned surface defect, reduce between group-III element face and nitrogen face
Surface roughness, reach the purpose of removal surface stress, reduce crack probability of the GaN substrate during follow-up use.
The removal of above-mentioned damage layer, it is particularly critical for thin layer group III-nitride backing material.When group III-nitride lining
The diameter at bottom is not more than 2 inches, and thickness range is between 30 microns -150 microns；When group III-nitride substrate diameter not
More than 4 inches, when thickness range is between 30 microns -250 microns；When the diameter of group III-nitride substrate is not more than 6 English
It is very little, when thickness range is between 30 microns -350 microns；Surface damage layer must be removed so that group-III element face and nitrogen
Roughness between face is respectively less than 0.2nm, reaches the purpose of removal surface stress, and reduction GaN substrate is during follow-up use
Crack probability.
Present invention also offers a kind of preparation method of group III-nitride substrate, comprise the following steps：The life of one extension is provided
The group III-nitride substrate for being formed long；The substrate is cut along the direction of the epitaxial growth plane parallel to the substrate, to obtain
The one cutting back substrate thin slice with epitaxial growth plane；The backing sheet is taken, removal is cut on surface because cutting is formed
Surface damage layer.
The present invention planarizes cutting surfaces, then will not cause extra stress on surface.Because epitaxial surface is smooth
, thus both sides surface all without there is extra stress, reduce backing sheet further implement to occur during homoepitaxy it is broken
The possibility split.
Brief description of the drawings
It is the implementation steps schematic diagram of embodiment of the invention methods described shown in accompanying drawing 1.
Specific embodiment
The specific embodiment of the group III-nitride substrate for providing the present invention below in conjunction with the accompanying drawings and preparation method thereof is done
Describe in detail.
It is the implementation steps schematic diagram of embodiment of the invention methods described shown in accompanying drawing 1.Step S10, there is provided
The one group III-nitride substrate being epitaxially-formed；Step S11, cuts along the direction of the epitaxial growth plane parallel to the substrate
The substrate is cut, to obtain a backing sheet with epitaxial growth plane；Step S12, takes the backing sheet, and removal is cut
Due to the surface damage layer of cutting formation on surface.
In step S10, the group III-nitride substrate selected from any one in GaN, AlN and InN, or by upper
State the multi-element compounds of combination of materials formation, such as AlxGa1-xN、InxGa1-xN or AlxInyGa1-x-yN etc., group-III element
Between ratio can be made adjustment according to actual conditions.The substrate that above-mentioned material is constituted has two different surfaces, its
One is group-III element face, and another is nitrogen face.For HVPE and MOCVD homepitaxy means, after epitaxial growth is finished
Surface is typically group-III element face.
In step S11, the substrate is cut along the direction of the epitaxial growth plane parallel to the substrate, carried with obtaining one
The cutting back substrate thin slice of epitaxial growth plane.In this specific embodiment, epitaxial growth plane is group-III element face.Cutting can be with
Implemented by the way of scroll saw or laser cutting.The nitrogen face of the backing sheet obtained after cutting is cut surface, roughness compared with
Greatly.In this specific embodiment, scope of the cut surface apart from the group-III element face of the substrate be thickness range be 30 microns-
350 microns, for the substrate less than two inches, changing thickness range can also be further reduced to less than 150 microns.Above-mentioned steps
A group III-nitride backing sheet is obtained after finished.Another part substrate after being cut is after surface polishes if thick
Degree disclosure satisfy that the requirement cut again, then still can continue to implement cutting.
In step S12, the group III-nitride backing sheet after above-mentioned cutting subsequently carries out epitaxial growth for needs
Surface, can typically use abrasive polishing process, surface damage layer be removed completely, the need for meeting subsequently epitaxial growing；Other one
Face, in order to save processing cost, typically accomplishes that optical grade is polished, and its typical surface roughness is still suffered from 1nm or so
The damage layer of thinner thickness.Surface stress caused by above-mentioned damage layer, for group III-nitride backing sheet, is present huge
Big influence.Not only cause the warping table of substrate to reach, also result in the cracking during follow-up epitaxial growth and device fabrication,
Fine ratio of product is impacted.
The thin slice is taken, further removal need not carry out the damage layer on epitaxial growth surface.The removal cutting damage
The method of layer is selected from mechanical polishing and the combination of chemically mechanical polishing.Wherein mechanical polishing can be without thinning table of selection
Face, but a thin layer surface damage layer can be also remained simultaneously, while by way of chemical polishing, further mechanical damage layer is gone
Remove, realize the effect that surface damage layer is removed completely.In the case where surface damage layer is removed completely, the roughness on surface is general
Less than 0.2nm, its flatness is better than optical grade polished surface.In addition to the combination of mechanical polishing and chemical polishing, using machine
The combined method of technological means such as tool polishing and wet etching, plasma dry etch, it is also possible to realize surface roughness
Less than 0.2nm, the effect of uniform removal surface damage layer is reached.
Although the technique of plasma dry etch be the etching process of isotropic, but to damage formed recess by
The concentration is caused to reduce in the constricted flow of etching available gas, therefore corrosion rate can be less than other parts, through after a while
After can also form flat surface.And the time of plasma dry etch is short and be non-mechanical means, will not implement
During cause the fragmentation of thin slice, therefore be preferred embodiment.Because nitrogen face is easily implemented to polish and etch, therefore preferably
Epitaxial surface is group-III element face, and cut surface implements this specific embodiment for the substrate in nitrogen face.
Research finds that some is by substrate surface damages brought stress the reason for extension thin slice is chipping
Cause.Therefore this specific embodiment planarizes cutting surfaces, then will not cause extra stress on surface.Due to extension
Surface be it is smooth, therefore both sides surface all without there is extra stress, reduce backing sheet and further implement outside homogeneity
The chipping possibility of time delay.Experiment shows that this specific embodiment methods described disclosure satisfy that scope is that thickness range is 30
- 350 microns of micron, for the substrate for being not more than two inches, the thickness range can also be further reduced to less than 150 microns.
Backing sheet after above-mentioned steps are finished will not fragmentation again when homoepitaxy is further implemented.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, under the premise without departing from the principles of the invention, can also make some improvements and modifications, and these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (13)
1. a kind of group III-nitride substrate, it is characterised in that the roughness between the group-III element face and nitrogen face of the substrate
Respectively less than 0.2nm.
2. group III-nitride substrate according to claim 1, it is characterised in that the diameter of the substrate is not more than 2 English
Very little, the thickness range of substrate is 30 microns -150 microns.
3. group III-nitride substrate according to claim 1, it is characterised in that the diameter of the substrate is not more than 4 English
Very little, the thickness range of substrate is 30 microns -250 microns.
4. group III-nitride substrate according to claim 1, it is characterised in that the diameter of the substrate is not more than 6 English
Very little, the thickness range of substrate is 30 microns -350 microns.
5. group III-nitride substrate according to claim 1, it is characterised in that the group III-nitride substrate is selected from
Any one in GaN, AlN and InN, or the multi-element compounds for being formed are combined by above-mentioned material.
6. a kind of preparation method of group III-nitride substrate, it is characterised in that comprise the following steps：
The one group III-nitride substrate being epitaxially-formed is provided；
The substrate is cut along the direction of the epitaxial growth plane parallel to the substrate, to obtain a lining with epitaxial growth plane
Bottom thin slice；
The backing sheet is taken, removal is cut the surface damage layer formed due to cutting on surface.
7. method according to claim 6, it is characterised in that the epitaxial growth plane is group-III element face, described to be cut
It is nitridation object plane to cut surface.
8. method according to claim 7, it is characterised in that the method for the removal cutting damage layer is by mechanization
Grinding and polishing is learned, surface damage layer is removed completely.
9. method according to claim 6, it is characterised in that the diameter of the substrate is not more than 2 inches, and removal damages layer
Substrate thickness scope afterwards is 30 microns -150 microns.
10. method according to claim 6, it is characterised in that the diameter of the substrate is not more than 4 inches, and removal is damaged
Substrate thickness scope after layer is 30 microns -250 microns.
11. methods according to claim 6, it is characterised in that the diameter of the substrate is not more than 6 inches, and removal is damaged
Substrate thickness scope after layer is 30 microns -350 microns.
12. methods according to claim 6, it is characterised in that take the removed substrate of epitaxial growth plane, polish the substrate
Cut surface, and continue the group III-nitride substrate that is used as the above method.
13. methods according to claim 6, it is characterised in that the group III-nitride substrate selected from GaN, AlN and
Any one in InN, or the multi-element compounds for being formed are combined by above-mentioned material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201611247209.3A CN106711023A (en) | 2016-12-29 | 2016-12-29 | III-group nitride substrate and preparation method thereof |
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| CN201611247209.3A CN106711023A (en) | 2016-12-29 | 2016-12-29 | III-group nitride substrate and preparation method thereof |
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Application publication date: 20170524 |