CN106706005B - A kind of magnetoresistive sensor temperature compensation method - Google Patents
A kind of magnetoresistive sensor temperature compensation method Download PDFInfo
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- CN106706005B CN106706005B CN201611032480.5A CN201611032480A CN106706005B CN 106706005 B CN106706005 B CN 106706005B CN 201611032480 A CN201611032480 A CN 201611032480A CN 106706005 B CN106706005 B CN 106706005B
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- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
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- G01D3/028—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure
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Abstract
The present invention relates to sensor design fields, in view of the problems of the existing technology, a kind of magnetoresistive sensor temperature-compensation method is provided, it carries out special designing in the amplifying circuit of existing magnetoresistive sensor or magnetoresistive sensor power supply part, the temperature characterisitic of magnetoresistive sensor is compensated, to obtain higher precision.The present invention is powered by reference power supply to magnetoresistive sensor；Temperature-compensating amplifier amplifying circuit compensates and amplifies to magnetoresistive sensor temperature, as gain resistor R in temperature-compensating amplifier amplifying circuitgWhen with two input pickup resistance of third level operational amplifier being NTC resistance, then according to NTC formula magnetoresistive sensor Calculation of Sensitivity module meter sensitivity；When the third level op-amp gain resistance and third level operational amplifier ground resistance of temperature-compensating amplifier amplifier are PTC resistors, then according to PTC formula magnetoresistive sensor Calculation of Sensitivity module meter sensitivity.
Description
Technical field
The present invention relates to sensor design field, especially a kind of magnetoresistive sensor temperature-compensation method.
Background technique
Magnetoresistive sensor is widely used in data storage field (hard disc of computer, MRAM), the fields of measurement of electric current, position
Set measurement, the movement and speed of object, the fields of measurement of angle and angular speed etc..
Magnetoresistive sensor ontology has multi-layer film structure, spin valve structure, tunnel junction structure etc..With magnetic-field measurement demand
Increase, magnetoresistive magnetic field sensor has more and more attracted the attention of researcher, in many properties of magnetoresistive sensor
In, temperature dependency is that people earnestly pays close attention to always.The existing method for reducing temperature drift is by magnetic sensing chip internal resistance
With favour stone full bridge formation configuration, but it is demonstrated experimentally that the temperature drift of the magnetic sensing chip under favour stone full bridge configuration still not
It is negligible.
Experiment is as shown in Figure 1 with magnetoresistive sensor electric bridge chip temperature characteristic.Sensing chip curve is varied with temperature such as 1 institute
Show, from sensing curve it is found that its sensitivity and magnetoresistive ratio are increased with temperature and reduced.Chip 0~linear the model of ± 40Oe
The sensitivity and drift enclosed vary with temperature as shown in Figure 2.
Within the scope of -40~80 DEG C, magnetoresistive chip sensitivity is increased with temperature and is reduced, linear approximate relationship.With chip
On the basis of 20 DEG C of sensing characteristics, change of sensitivity temperature coefficient is about 770PPM/K, i.e. the every degree variation of chip sensitivity
0.077%, the sensitivity maximum possible variation 9.24% within the scope of -40~80 DEG C.Chip drift increases and approximate line with temperature
Property increase, when by 20 DEG C on the basis of, drift transformation temperature coefficient is about 59PPM/K.Due to chip interior arm resistance usability
Can very close symmetrical resistance, drift varies less.
Summary of the invention
The technical problems to be solved by the present invention are: in view of the problems of the existing technology, providing a kind of magnetoresistive sensor
Temperature-compensation method, it is special to carry out in the amplifying circuit of existing magnetoresistive sensor or magnetoresistive sensor power supply part
Design, reaches under special high-precision applications occasion, compensates to the temperature characterisitic of magnetoresistive sensor, to obtain higher essence
Degree.
The technical solution adopted by the invention is as follows:
Further, a kind of magnetoresistive sensor temperature-compensation method includes:
Step 1: the sensitivity under magnetic sensor device unit source voltage is represented by formula 1:
S1(T)=ST0(1+a(T-T0)) (1)
In formula, T is temperature, T0For reference temperature, ST0For temperature T0When sensitivity, a be transducer sensitivity temperature
Variation coefficient；
In practical Application in Sensing, it is necessary to match stand-by power source and signal conditioning circuit for senser element, at this time whole magnetic sensing
The sensitivity of device is formula 2:
S (T)=pVSST0(1+a(T-T0)) (2)
In formula, S is whole magnetoresistive sensor sensitivity, and p is back-end processing circuit amplification factor, and Vs is magnetic sensor device confession
Piezoelectric voltage；
Step 2: due to introducing temperature change item in p or Vs, formula 2 extends 2 kinds of forms, carries out the non-of Magnetic Sensor
Intrusive temperature compensating equations are formula (3) and formula (4):
S (T)=pVSST0(1+a(T-T0))(1+b(T-T0)) (3)
In formula, b is the temperature varying coefficient by temperature regulation circuit, (1+b (T-T0)) it is the temperature separated from p or Vs
Degree variation item；Assuming that senor operating temperature range is T1~T2, wherein T1<T0<T2；
Wherein, for formula (3), by optimizing b, so that S (T) is in [T1,T2] in variation it is minimum；Therefore, relationship by objective (RBO) formula becomes
Are as follows:
Under normal conditions, the temperature varying coefficient of sensor | a | < 0.1%/DEG C, therefore 1+aT2>0；
B value when temperature drift amount minimum is obtained according to formula (5), so that S (T) is minimum；
Wherein, for formula (4), it is only necessary to enable b=a, be eliminated at this time by zero pole point, so that it may completely eliminate temperature
It influences, so that S (T) is minimum；
Step 3: the non-invasive temperature compensation method of Magnetic Sensor is the first or second, the first is according to temperature
Variation changes magnetic sensing chip both ends supply voltage Vs in real time to reduce temperature drift amount, carries out temperature-compensating；Second is root
Change magnetic sensing chip back end signal conditioning circuit amplification factor p in real time according to temperature change to reduce temperature drift amount, carries out temperature
Degree compensation.
Further, for formula (3) in step 2, by optimizing b, specific steps include:
Step 21: by optimizing b, so that S (T) is in [T1,T2] in variation it is minimum；Therefore, relationship by objective (RBO) formula becomes:
Under normal conditions, the temperature varying coefficient of sensor | a | < 0.1%/DEG C, therefore 1+aT2>0；
Step 22: divide situation discussion below:
The first situation, whenI.e.When:
Max (f (T))=f (T1), min (f (T))=f (T2), have:
WhenWhen, target value is minimum are as follows:
Second situation, whenI.e.
When:Have:
WhenWhen, target value is minimum are as follows:
The third situation, whenI.e.
When,Have:
WhenWhen, target value is minimum are as follows:
4th kind of situation, whenI.e.When:
Max (f (T))=f (T2), min (f (T))=f (T1), have:
WhenWhen, target value is minimum are as follows:
In summary 4 kinds of situations, it is known that
When, temperature drift is minimum, and is
Further, step 3 is comprised the concrete steps that when changing magnetic sensing chip both ends supply voltage Vs to reduce temperature drift:
Step 301: being directed to formula (3), the front end power circuit to magneto-resistive transducing chip both ends supply voltage includes that supply voltage is V1
Common power, temperature change V2+k(T-T0) just temperature sensitive power supply, first resistor, second resistance, 3rd resistor and feedback
Resistance；Wherein k unit is V/° C；Common power is powered by first resistor to amplifier normal phase input end, while positive temperature
Quick power supply is powered by second resistance to amplifier normal phase input end, and amplifier normal phase input end is grounded by 3rd resistor；It puts
Big device negative input is connect by feedback resistance with amplifier out, and amplifier out is exported as front end power circuit
End is that magneto-resistive transducing chip is powered；Front end power circuit output end voltage V:
In formula, first resistor, second resistance, 3rd resistor and feedback resistance resistance value are respectively corresponded as R1, R2, R3, R4；The
One resistance, second resistance, 3rd resistor and feedback resistance are conventional, electric-resistance, V1For common power, V2K is being positive just for change rate
Temperature sensitive power supply；
Step 302: because of k (T-T in formula (7)0) it is temperature sensitive part, it is related with temperature change, while 1+b in formula 3
(T-T0) it is also the temperature change item of introducing on the basis of formula (2)；It therefore can be by adjusting R1And R2, it enables in formula:It is minimum to may make temperature drift amount, and is
Further, in step 3, reduce temperature drift amount when changing magnetic sensing chip both ends supply voltage Vs, carry out
When temperature-compensating, comprise the concrete steps that:
Step 311: being directed to formula (3), the front end power circuit to magneto-resistive transducing chip both ends supply voltage includes power supply
Voltage is V1Common power, first resistor, second resistance, 3rd resistor and feedback resistance, wherein feedback resistance be resistance value
It is R4+k(T-T0) PTC resistor；Common power is powered by first resistor to amplifier normal phase input end, and amplifier positive is defeated
Enter end to be grounded by second resistance；It simultaneously amplifies device negative input to be grounded by 3rd resistor, amplifier negative input is logical
Feedback resistance is crossed to connect with amplifier out；Wherein k unit is V/° C；Amplifier out is as front end power supply electricity
Road output end is the power supply of magneto-resistive transducing chip；Front end power circuit output end voltage V:
In formula, first resistor, second resistance, 3rd resistor and feedback resistance resistance value are respectively corresponded as R1, R2, R3, R4；The
One resistance, second resistance, 3rd resistor are conventional, electric-resistance, V1For general mains voltage value, feedback resistance is that the change rate k that is positive is
Positive temperature coefficient resistor；
Step 312: because of k (T-T in formula (8)0) it is temperature sensitive part, it is related with temperature change, while 1+b in formula 3
(T-T0) it is also the temperature change item of introducing on the basis of formula (2)；Therefore by adjusting R3And R4, it enables in formula:It is minimum to may make temperature drift amount, and is
Further, in step 3, reduce temperature drift amount when changing magnetic sensing chip both ends supply voltage Vs, carry out
When temperature-compensating, comprise the concrete steps that:
Step 321: being directed to formula (4), the front end power circuit to magneto-resistive transducing chip both ends supply voltage includes power supply
Voltage is V1Common power, first resistor, second resistance, 3rd resistor and feedback resistance；Common power passes through the first electricity
It hinders and powers to amplifier normal phase input end, amplifier normal phase input end is grounded by second resistance；Simultaneously amplify the input of device negative sense
End is grounded by 3rd resistor, and amplifier negative input is connect by feedback resistance with amplifier out；Wherein k unit is
V/° C；Amplifier out is the power supply of magneto-resistive transducing chip as front end power circuit output end；Front end power circuit is defeated
Outlet voltage V:
In formula, first resistor, second resistance, 3rd resistor and feedback resistance resistance value are respectively corresponded as R1, R2, R3, R4；The
Two resistance, 3rd resistor and feedback resistance are conventional, electric-resistance, V1For general mains voltage value, first resistor is that change rate is that-k is
Negative temperature coefficient resister；
Step 322: because of k (T-T in formula (9)0) it is temperature sensitive part, it is related with temperature change, while 1+ in formula (4)
b(T-T0) it is also the temperature change item of introducing on the basis of formula (2)；By adjusting R1、R2It enables:?
It so that temperature drift amount is minimum, and is 0.
Further, second of Magnetic Sensor non-invasive temperature compensation method is according to temperature change in the step 3
Change magnetic sensing chip back end signal conditioning circuit amplification factor p in real time to reduce temperature drift amount, it is specific to carry out temperature-compensating
It is:
Step 331: signal conditioning circuit is three amplifier instrument amplifier circuit of standard, back end signal conditioning circuit times magnification
Number:
When first resistor and 3rd resistor are PTC resistor, when reference formula (3) select PTC resistor parameter, achievable reduction
Temperature drift amount carries out temperature-compensating；
Step 332: first resistor resistance value is R1, R1=R0(1+k(T-T0)), R0For temperature T0When second resistance resistance value, k is
Temperature varying coefficient, by R1=R0(1+k(T-T0)) bring formula (10) into, it can obtain:
Then according to the principle of formula (3), from formula (11) it is found that
When, i.e. ΔminMinimum, temperature drift amount is minimum, carries out temperature-compensating；
Therefore by adjusting R0、Rg, any one parameter, two parameters or three parameters in tri- parameters of K, make its satisfaction,
Then make temperature drift amount minimum, realizes temperature-compensating；
Step 333: 3rd resistor resistance value is R3: R3=R0(1+k(T-T0)) wherein, R0For temperature T0When resistance, k is temperature
Variation coefficient, by R3=R0(1+k(T-T0)) bring formula (10) into, it can obtain:
Then according to the principle of formula (3), from formula (12) it is found that needingWhen, i.e. ΔminMost
Small, temperature drift amount is minimum, carries out temperature-compensating；Therefore it adjustsMiddle k may make temperature drift
Amount is minimum, carries out temperature-compensating.
Further, second of Magnetic Sensor non-invasive temperature compensation method is according to temperature change in the step 3
Change magnetic sensing chip back end signal conditioning circuit amplification factor p in real time to reduce temperature drift amount, it is specific to carry out temperature-compensating
It is:
Step 341: back end signal conditioning circuit amplification factor:
Step 342: when gain resistor and second resistance are NTC resistance, reference formula (4) selects NTC resistance parameter, i.e.,
Achievable reduction temperature drift amount carries out temperature-compensating；
Step 343: second resistance resistance value is R2Design parameter selection are as follows: R2=R0(1+k(T-T0)), due to R2It appears in
The denominator position of formula (8) needs b=a then according to the principle of formula (4), can eliminate temperature offset amount, then by R2=R0(1
+k(T-T0)) bring formula (10) into,
Wherein, R0For temperature T0When resistance, k is temperature varying coefficient, from formula (13) it is found that only needing k=a that can eliminate temperature
Spend offset affect.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
Because magnetic sensor signal has to by signal amplification circuit, the present invention is just using three amplifier of standard amplification electricity
On the basis of road, do not increase additional circuit structure, three amplifiers of mark are only worked as into temperature-compensating amplifier amplifying circuit in big circuit
Middle gain resistor RgWhen being substituted with two input pickup resistance of third level operational amplifier with NTC resistance, or temperature-compensating transported
The third level op-amp gain resistance and third level operational amplifier ground resistance for putting amplifier are substituted with PTC resistor.I.e.
Normal resistance only need to be changed to thermo-sensitive resistor by compensation, and parameter regulation need to only be changed to suitable resistance on primary circuit,
The amplification factor handled by conditioned signal carries out temperature-compensating and hardly increases cost, while its compensation effect is clearly,
Sensitivity temperature variation coefficient is only original 7.7% after compensation.
Detailed description of the invention
Examples of the present invention will be described by way of reference to the accompanying drawings, in which:
Fig. 1 is to sense curve in magnetoresistive chip temperature characterisitic to vary with temperature figure.
Fig. 2 is that temperature drift varies with temperature figure in magnetoresistive chip temperature characterisitic.
Fig. 3 is for formula (3), the first compensation circuit structural schematic diagram of magnetoresistive sensor front-end power voltage segment.
Fig. 4 is for second of compensation circuit structural schematic diagram of formula (3) magnetoresistive sensor front-end power voltage segment.
Fig. 5 is for second of compensation circuit structural schematic diagram of formula (4) magnetoresistive sensor front-end power voltage segment.
Fig. 6 is magnetoresistive sensor rear end conditioning circuit temperature-compensation circuit structural schematic diagram.
Fig. 7 is second of compensation circuit effect temperature compensation figure of magnetoresistive sensor.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
Any feature disclosed in this specification unless specifically stated can be equivalent or with similar purpose by other
Alternative features are replaced.That is, unless specifically stated, each feature is an example in a series of equivalent or similar characteristics
?.
1, related description of the present invention:
Fig. 6, signal conditioning circuit are three amplifier instrument amplifier circuits of standard；Including first order operational amplifier A1,
Two-level operating amplifier A2With third level operational amplifier A3And gain resistor, first resistor, second resistance, 3rd resistor.
Gain resistor is connected on the first operational amplifier A1With second operational amplifier A2Between.First resistor is connected across first order fortune
Calculate amplifier A inverting input terminal and first order operational amplifier A1Between output end, first resistor is connected across second level operation and puts
Big device A2Reverse input end and second level operational amplifier A2Between output end.First order operational amplifier output terminal and the third level
Second resistance is concatenated between operational amplifier reverse input end；Second level operational amplifier output terminal and third level operational amplifier
Second resistance is concatenated between normal phase input end；3rd resistor R is connected across third operational amplifier A3Reverse input end and the third level
Between operational amplifier output terminal；Third level operational amplifier positive input is grounded by 3rd resistor.First resistor, second
Resistance, 3rd resistor, gain resistor resistance value respectively correspond as R1、R2、R3、Rg。
Temperature-compensating amplifier amplifying circuit refers to three amplifier instrument amplifier of standard；Gain resistor R in circuitgWith
The second resistance of two input terminal of three-stage operational amplifier connection is NTC resistance；Or first resistor R1, temperature-compensating amplifier amplification
The third level operational amplifier 3rd resistor R of device3With the 3rd resistor R of third level operational amplifier ground connection3It is PTC resistor.
The course of work:
It was found that, being compared with modification magnetic sensing chip internal structure with reducing temperature drift, using outer-rear end electricity
The mode of road compensation has many advantages, such as non-intrusion type, high reliability, easily realizes.Experiment shows the outside proposed using this section
Temperature Compensation Strategy can effectively reduce temperature drift (temperature drift reduces 43.5 times) and experiment and theory have high consistency.
A kind of magnetoresistive sensor temperature-compensation method based on temperature sensitive power supply includes:
Step 1: the sensitivity under magnetic sensor device unit source voltage is represented by formula 1:
S1(T)=ST0(1+a(T-T0)) (1)
In formula, T is temperature, T0For reference temperature, ST0For temperature T0When sensitivity, a be transducer sensitivity temperature
Variation coefficient；
In practical Application in Sensing, it is necessary to match stand-by power source and signal conditioning circuit for senser element, at this time whole magnetic sensing
The sensitivity of device is formula 2:
S (T)=pVSST0(1+a(T-T0)) (2)
In formula, S is whole magnetoresistive sensor sensitivity, and p is back-end processing circuit amplification factor, and Vs is magnetic sensor device confession
Piezoelectric voltage；Step 2: due to introducing temperature change item in p or Vs, formula 2 extends 2 kinds of forms, carries out the non-of Magnetic Sensor
Intrusive temperature compensating equations are formula (3) and formula (4):
S (T)=pVSST0(1+a(T-T0))(1+b(T-T0)) (3)
In formula, b is the temperature varying coefficient by temperature regulation circuit, (1+b (T-T0)) it is the temperature separated from p or Vs
Degree variation item；Assuming that senor operating temperature range is T1~T2, wherein T1<T0<T2；
Wherein, for formula (3), by optimizing b, so that S (T) is in [T1,T2] in variation it is minimum；Therefore, relationship by objective (RBO) formula becomes
Are as follows:
Under normal conditions, the temperature varying coefficient of sensor | a | < 0.1%/DEG C, therefore 1+aT2>0；
Step 32: divide situation discussion below:
The first situation, whenI.e.When:
Max (f (T))=f (T1), min (f (T))=f (T2), have:
WhenWhen, target value is minimum are as follows:
Second situation, whenI.e.When:Have:
WhenWhen, target value is minimum are as follows:
The third situation, whenI.e.
When,
Have:
WhenWhen, target value is minimum are as follows:
4th kind of situation, whenIt is instant:
Max (f (T))=f (T2), min (f (T))=f (T1), have:
WhenWhen, target value is minimum are as follows:
In summary 4 kinds of situations, it is known that
When, temperature drift is minimum, and is
Under normal conditions, the temperature varying coefficient of sensor | a | < 0.1%/DEG C, therefore 1+aT2>0；
B value when temperature drift amount minimum is obtained according to formula (5), so that minimum；
Wherein, for formula (4), it is only necessary to enable b=a, be eliminated at this time by zero pole point, so that it may completely eliminate temperature
It influences, so that minimum；
Step 3: the non-invasive temperature compensation method of Magnetic Sensor is the first or second, the first is according to temperature
Degree variation changes magnetic sensing chip both ends supply voltage Vs in real time to reduce temperature drift amount, carries out temperature-compensating；It is for second
Change magnetic sensing chip back end signal conditioning circuit amplification factor p in real time according to temperature change to reduce temperature drift amount, carries out
Temperature-compensating.
1, front end power circuit includes three kinds of compensation methodes:
1) the first compensation way: (as shown in Figure 3)；
In step 2 when changing magnetic sensing chip both ends supply voltage Vs to reduce temperature drift, comprise the concrete steps that:
Step 201: being directed to formula (3), the front end power circuit to magneto-resistive transducing chip both ends supply voltage includes power supply
Voltage is V1Common power, temperature change V2+k(T-T0) just temperature sensitive power supply, first resistor, second resistance, 3rd resistor
And feedback resistance；Wherein k unit is V/° C；Common power is powered by first resistor to amplifier normal phase input end,
Just temperature sensitive power supply is powered by second resistance to amplifier normal phase input end simultaneously, and amplifier normal phase input end passes through 3rd resistor
Ground connection；Amplifier negative input is connect by feedback resistance with amplifier out, and amplifier out is as front end power supply
Circuit output end is the power supply of magneto-resistive transducing chip；Front end power circuit output end voltage V:
In formula, first resistor, second resistance, 3rd resistor and feedback resistance resistance value are respectively corresponded as R1、R2、R3、R4；The
One resistance, second resistance, 3rd resistor and feedback resistance are conventional, electric-resistance, V1For general mains voltage value, V2It is positive for change rate
The just temperature sensitive supply voltage value of k；
Step 202: because of k (T-T in formula (7)0) it is temperature sensitive part, it is related with temperature change, while 1+b in formula 3
(T-T0) it is also the temperature change item of introducing on the basis of formula (2)；It therefore can be by adjusting R1And R2, it enables in formula:It is minimum to may make temperature drift amount, and is
Second of compensation situation: (as shown in Figure 4)
In step 2 when changing magnetic sensing chip both ends supply voltage Vs to reduce temperature drift, comprise the concrete steps that:
Step 211: being directed to formula (3), the front end power circuit to magneto-resistive transducing chip both ends supply voltage includes power supply
Voltage is V1Common power, first resistor, second resistance, 3rd resistor and feedback resistance, wherein feedback resistance be resistance value
It is R4The PTC resistor of+k (T-T0)；Common power is powered by first resistor to amplifier normal phase input end, and amplifier positive is defeated
Enter end to be grounded by second resistance；It simultaneously amplifies device negative input to be grounded by 3rd resistor, amplifier negative input is logical
Feedback resistance is crossed to connect with amplifier out；Wherein k unit is V/° C；Amplifier out is as front end power supply electricity
Road output end is the power supply of magneto-resistive transducing chip；Front end power circuit output end voltage V:
In formula, first resistor, second resistance, 3rd resistor and feedback resistance resistance value are respectively corresponded as R1、R2、R3、R4；The
One resistance, second resistance, 3rd resistor are conventional, electric-resistance, V1For general mains voltage value, the 4th resistance is that the change rate k that is positive is
Positive temperature coefficient resistor；
Step 212: because of k (T-T in formula (8)0) it is temperature sensitive part, it is related with temperature change, while 1+b in formula 3
(T-T0) it is also the temperature change item of introducing on the basis of formula (2)；Therefore by adjusting R3And R4, it enables in formula:It is minimum to may make temperature drift amount, and is
The third compensation method: (as shown in Figure 5)
In step 2 when changing magnetic sensing chip both ends supply voltage Vs to reduce temperature drift, comprise the concrete steps that:
Step 211: being directed to formula (4), the front end power circuit to magneto-resistive transducing chip both ends supply voltage includes power supply
Voltage is V1Common power, first resistor, second resistance, 3rd resistor and feedback resistance；Common power passes through the first electricity
It hinders and powers to amplifier normal phase input end, amplifier normal phase input end is grounded by second resistance；Simultaneously amplify the input of device negative sense
End is grounded by 3rd resistor, and amplifier negative input is connect by feedback resistance with amplifier out；Wherein k unit is
V/° C；Amplifier out is the power supply of magneto-resistive transducing chip as front end power circuit output end；Front end power circuit is defeated
Outlet voltage V:
In formula, first resistor, second resistance, 3rd resistor and feedback resistance resistance value are respectively corresponded as R1、R2、R3、R4；The
Two resistance, 3rd resistor and feedback resistance are conventional, electric-resistance, V1For general mains voltage value, first resistor is that change rate is-k
(T-T0) it is negative temperature coefficient resister；
Step 212: because of k (T-T in formula (9)0) it is temperature sensitive part, it is related with temperature change, while 1+ in formula (4)
b(T-T0) it is also the temperature change item of introducing on the basis of formula (2)；By adjusting R1、R2It enables:?
It so that temperature drift amount is minimum, and is 0.
2, for the temperature-compensation method of back end signal conditioning, as shown in Figure 6:
The circuit improves multiple are as follows:
Work as R1And R3For PTC resistor, when reference formula (3) select PTC resistor parameter, achievable reduction temperature drift amount, into
Trip temperature compensation；
1) first resistor resistance value is R1, R1=R0(1+k(T-T0)), R0For temperature T0When second resistance valued resistor, k be temperature
Variation coefficient is spent, by R1=R0(1+k(T-T0)) bring formula (10) into, it can obtain:
Then according to the principle of formula (3), from formula (11) it is found that
When, i.e. ΔminMinimum, temperature drift amount is minimum, carries out temperature-compensating；
Therefore by adjusting R0, Rg, an any one parameter, two parameters or three parameters in tri- parameters of K, keep it full
Foot then makes temperature drift amount minimum, realizes temperature-compensating；
2) 3rd resistor resistance value is R3: R3=R0(1+k(T-T0)) wherein, R0For temperature T0When second resistance valued resistor,
K is temperature varying coefficient, by R3=R0(1+k(T-T0)) bring formula (10) into, it can obtain:
Then according to the principle of formula (3), from formula (12) it is found that needingWhen, i.e. ΔminMost
Small, temperature drift amount is minimum, carries out temperature-compensating；Therefore it adjustsMiddle k may make temperature drift
Amount is minimum, carries out temperature-compensating.
2) back end signal conditioning circuit amplification factor p carrys out temperature drift amount, carries out the temperature-compensation method tool of temperature-compensating
Body is: step 341: back end signal conditioning circuit amplification factor:
Step 342: when gain resistor and second resistance select NTC resistance, reference formula (4) selects NTC resistance parameter,
It can be completed and reduce temperature drift amount, carry out temperature-compensating；
Step 332: second resistance resistance value is R2Design parameter selection are as follows: R2=R0(1+k(T-T0)), then due to R2Occur
B=a is needed according to the principle of formula (4) in the denominator position of formula (8), temperature offset amount can be eliminated, then by R2=R0(1
+k(T-T0)) bring formula (10) into,
Wherein, R0For temperature T0When second resistance valued resistor, k is temperature varying coefficient, from formula (13) it is found that only needing k=
A can eliminate temperature offset amount influence, therefore adjust the resistance value R of second resistance2=R0(1+a(T-T0)), temperature drift can be eliminated
Shifting amount carries out temperature-compensating.
Compensation effect is as shown in fig. 7, a series of straight line that four directions graphic datas are formed in figure is magnetoresistive sensor spirit before compensating
Sensitivity Sui temperature variation data point；When a series of straight line that triangle apex angles are formed upward in figure is after power supply end compensating, magnetic
Resistance transducer sensitivity varies with temperature data point, and a series of straight line that triangle apex angles are formed downward in figure is temperature-compensating
After the compensation of amplifier amplifying circuit, magnetoresistive sensor sensitivity varies with temperature data point.
It can be seen that in Fig. 7, theoretical curve and experimental data point are almost the same, change the power supply of magnetic sensing chip using with temperature
Voltage method progress temperature-compensating can effectively reduce sensitivity temperature drift, and (sensitivity temperature drift is reduced into six before compensation
/ mono-).
In Fig. 7, under high temperature (temperature is higher than 40 degrees Celsius), empirical curve and theoretical curve have one after the compensation of sensitivity
Fixed deviation, and departure degree increases with the raising of temperature.This description of test: 1. sensitivity vary with temperature it is very small, no
The slight change of sensitivity caused by position deviation can be ignored；2. theoretical calculation and experimental result can be coincide with extraordinary；3.
Sensitivity temperature variation is compensated by changing magnetic sensing chip supply voltage has feasibility.
The invention is not limited to specific embodiments above-mentioned.The present invention, which expands to, any in the present specification to be disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.
Claims (7)
1. a kind of magnetoresistive sensor temperature-compensation method, characterized by comprising:
Step 1: the sensitivity under magnetic sensor device unit source voltage is represented by formula (1):
S1(T)=ST0(1+a(T-T0)) (1)
In formula, T is temperature, T0For reference temperature, ST0For temperature T0When sensitivity, a be transducer sensitivity temperature change system
Number；
In practical Application in Sensing, it is necessary to for senser element match stand-by power source and signal conditioning circuit, at this time whole Magnetic Sensor
Sensitivity is formula 2:
S (T)=pVSST0(1+a(T-T0)) (2)
In formula, S is whole magnetoresistive sensor sensitivity, and p is back-end processing circuit amplification factor, and Vs is magnetic sensor device power supply electricity
Pressure；
Step 2: due to introducing temperature change item in p or Vs, formula 2 extends 2 kinds of forms, carries out the non-intruding of Magnetic Sensor
Formula temperature compensating equations are formula (3) and formula (4):
S (T)=pVSST0(1+a(T-T0))(1+b(T-T0)) (3)
In formula, b is the temperature varying coefficient by temperature regulation circuit, (1+b (T-T0)) it is that the temperature separated from p or Vs becomes
Change item；Assuming that senor operating temperature range is T1~T2, wherein T1<T0<T2；
Wherein, for formula (3), by optimizing b, so that S (T) is in [T1,T2] in variation it is minimum；Therefore, relationship by objective (RBO) formula becomes:
Under normal conditions, the temperature varying coefficient of sensor | a | < 0.1%/DEG C, therefore 1+aT2>0；
B value when temperature drift amount minimum is obtained according to formula (5), so that S (T) is minimum；
Wherein, for formula (4), it is only necessary to enable b=a, be eliminated at this time by zero pole point, so that it may completely eliminate the shadow of temperature
It rings, so that S (T) is minimum；
Step 3: temperature-compensating is carried out according to the non-invasive temperature compensation method of the first or second of Magnetic Sensor；The first
The compensation of Magnetic Sensor non-invasive temperature is to change magnetic sensing chip both ends supply voltage Vs in real time according to temperature change to reduce
Temperature drift amount carries out temperature-compensating；Second of Magnetic Sensor non-invasive temperature compensation method is real-time according to temperature change
Change magnetic sensing chip back end signal conditioning circuit amplification factor p to reduce temperature drift amount, carries out temperature-compensating.
2. a kind of magnetoresistive sensor temperature-compensation method according to claim 1, it is characterised in that for formula in step 2
(3), it is specifically included by optimizing b:
Step 21: by optimizing b, so that S (T) is in [T1,T2] in variation it is minimum；Therefore, relationship by objective (RBO) formula becomes:
Under normal conditions, the temperature varying coefficient of sensor | a | < 0.1%/DEG C, therefore 1+aT2>0；
Step 22: divide situation discussion below:
The first situation, whenI.e.When:
Max (f (T))=f (T1), min (f (T))=f (T2), have:
WhenWhen, target value is minimum are as follows:
Second situation, whenI.e.When:
Min (f (T))=f (T2), have:
WhenWhen, target value is minimum are as follows:
The third situation, whenI.e.When,
Min (f (T))=f (T1), have:
WhenWhen, target value is minimum are as follows:
4th kind of situation, whenI.e.When:
Max (f (T))=f (T2), min (f (T))=f (T1), have:
WhenWhen, target value is minimum are as follows:
In summary 4 kinds of situations, it is known that
When, temperature drift is minimum, and is
3. a kind of magnetoresistive sensor temperature-compensation method according to claim 1, it is characterised in that the first magnetic in step 3
The compensation of sensor non-invasive temperature is to change magnetic sensing chip both ends supply voltage Vs in real time according to temperature change to reduce temperature
Drift value is spent, temperature-compensating is carried out and comprises the concrete steps that:
Step 301: being directed to formula (3), the front end power circuit to magneto-resistive transducing chip both ends supply voltage includes supply voltage
For V1Common power, temperature change V2+k(T-T0) just temperature sensitive power supply, first resistor, second resistance, 3rd resistor and
Feedback resistance；Wherein k unit is V/° C；Common power is powered by first resistor to amplifier normal phase input end, simultaneously
Just temperature sensitive power supply is powered by second resistance to amplifier normal phase input end, and amplifier normal phase input end is connect by 3rd resistor
Ground；Amplifier negative input is connect by feedback resistance with amplifier out, and amplifier out is as front end power supply electricity
Road output end is the power supply of magneto-resistive transducing chip；Front end power circuit output end voltage V:
In formula, R1、R2、R3、R4It respectively corresponds as first resistor, second resistance, 3rd resistor, feedback resistance resistance value, first resistor,
Second resistance, 3rd resistor and feedback resistance are conventional, electric-resistance, V1For general mains voltage value, V2It is positive the positive temperature of k for change rate
Quick supply voltage value；
Step 302: because of k (T-T in formula (7)0) it is temperature sensitive part, it is related with temperature change, while 1+b (T-T in formula 30)
It is also the temperature change item of introducing on the basis of formula (2)；It therefore can be by adjusting R1And R2, it enables in formula:It is minimum to may make temperature drift amount, and is
4. a kind of magnetoresistive sensor temperature-compensation method according to claim 1, it is characterised in that the first magnetic in step 3
The compensation of sensor non-invasive temperature is to change magnetic sensing chip both ends supply voltage Vs in real time according to temperature change to reduce temperature
Drift value is spent, temperature-compensating is carried out and comprises the concrete steps that:
Step 311: being directed to formula (3), the front end power circuit to magneto-resistive transducing chip both ends supply voltage includes supply voltage
For V1Common power, first resistor, second resistance, 3rd resistor and feedback resistance, wherein feedback resistance be resistance value be R4+k
(T-T0) PTC resistor；Common power is powered by first resistor to amplifier normal phase input end, and amplifier normal phase input end is logical
Cross second resistance ground connection；It simultaneously amplifies device negative input to be grounded by 3rd resistor, amplifier negative input passes through feedback
Resistance is connect with amplifier out；Wherein k unit is V/° C；Amplifier out is exported as front end power circuit
End is that magneto-resistive transducing chip is powered；Front end power circuit output end voltage V:
In formula, R1、R2、R3、R4Respectively first resistor, second resistance, 3rd resistor, the resistance value of feedback resistance, first resistor,
Two resistance and 3rd resistor are conventional, electric-resistance, V1For general mains voltage value, feedback resistance is that the change rate k that is positive is positive temperature system
Number resistance；
Step 312: because of k (T-T in formula (8)0) it is temperature sensitive part, it is related with temperature change, while 1+b (T-T in formula 30)
It is also the temperature change item of introducing on the basis of formula (2)；Therefore by adjusting R3And R4, it enables in formula:It is minimum to may make temperature drift amount, and is
5. a kind of magnetoresistive sensor temperature-compensation method according to claim 1, it is characterised in that the first magnetic in step 3
The compensation of sensor non-invasive temperature is to change magnetic sensing chip both ends supply voltage Vs in real time according to temperature change to reduce temperature
Drift value is spent, temperature-compensating is carried out and comprises the concrete steps that:
Step 321: being directed to formula (4), the front end power circuit to magneto-resistive transducing chip both ends supply voltage includes supply voltage
For V1Common power, first resistor, second resistance, 3rd resistor and feedback resistance；Common power is given by first resistor
The power supply of amplifier normal phase input end, amplifier normal phase input end are grounded by second resistance；It is logical to simultaneously amplify device negative input
3rd resistor ground connection is crossed, amplifier negative input is connect by feedback resistance with amplifier out；Wherein k unit be volt/
Degree Celsius；Amplifier out is the power supply of magneto-resistive transducing chip as front end power circuit output end；The output of front end power circuit
Hold voltage V:
In formula, R1、R2、R3、R4Respectively first resistor, second resistance, 3rd resistor, the resistance value of feedback resistance；Second resistance,
Three resistance and feedback resistance are conventional, electric-resistance, V1For general mains voltage value, it be-k is negative temperature that first resistor, which is change rate,
Coefficient resistance；
Step 322: because of k (T-T in formula (9)0) it is temperature sensitive part, it is related with temperature change, while 1+b (T- in formula (4)
T0) it is also the temperature change item of introducing on the basis of formula (2)；By adjusting R1、R2It enables:It may make
Temperature drift amount is minimum, and is 0.
6. a kind of magnetoresistive sensor temperature-compensation method according to claim 1, it is characterised in that second in the step 3
Kind Magnetic Sensor non-invasive temperature compensation method is to change magnetic sensing chip back end signal conditioning electricity in real time according to temperature change
To reduce temperature drift amount, carry out temperature-compensating is specifically road amplification factor p:
Step 331: signal conditioning circuit is three amplifier instrument amplifier circuit of standard, back end signal conditioning circuit amplification factor:
When first resistor and 3rd resistor are PTC resistor, when reference formula (3) select PTC resistor parameter, achievable reduction temperature
Drift value carries out temperature-compensating；
Step 332: first resistor resistance value is R1, R1=R0(1+k(T-T0)), R0For temperature T0When second resistance valued resistor, k is
Temperature varying coefficient, by R1=R0(1+k(T-T0)) bring formula (10) into, it can obtain:
Then according to the principle of formula (3), from formula (11) it is found that
When, i.e. ΔminMinimum, temperature drift amount is minimum, carries out temperature-compensating；
Therefore by adjusting R0、Rg, any one parameter, two parameters or three parameters in tri- parameters of K, make its satisfaction, then make
It is minimum to obtain temperature drift amount, realizes temperature-compensating；
Step 333: 3rd resistor resistance value is R3: R3=R0(1+k(T-T0)) wherein, R0For temperature T0When second resistance resistance value,
K is temperature varying coefficient, by R3=R0(1+k(T-T0)) bring formula (10) into, it can obtain:
Then according to the principle of formula (3), from formula (12) it is found that needingWhen, i.e. ΔminMinimum,
Temperature drift amount is minimum, carries out temperature-compensating；Therefore it adjustsMiddle k may make temperature drift amount
Minimum carries out temperature-compensating.
7. a kind of magnetoresistive sensor temperature-compensation method according to claim 1, it is characterised in that second in the step 3
Kind Magnetic Sensor non-invasive temperature compensation method is to change magnetic sensing chip back end signal conditioning electricity in real time according to temperature change
To reduce temperature drift amount, carry out temperature-compensating is specifically road amplification factor p:
Step 341: back end signal conditioning circuit amplification factor:
Step 342: when gain resistor and second resistance select suitable NTC resistance, reference formula (4) selects NTC resistance ginseng
Number can be completed and reduce temperature drift amount, carry out temperature-compensating；
Step 343: second resistance resistance value is R2Design parameter selection are as follows: R2=R0(1+k(T-T0)), due to R2Appear in formula
(8) denominator position needs b=a then according to the principle of formula (4), can eliminate temperature offset amount, then by R2=R0(1+k
(T-T0)) bring formula (10) into, obtain formula (13)；
Wherein, R0For temperature T0When second resistance resistance value, k is temperature varying coefficient, from formula (13) it is found that only needing k=a that can disappear
Except temperature offset amount influences.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5402064A (en) * | 1992-09-02 | 1995-03-28 | Santa Barbara Research Center | Magnetoresistive sensor circuit with high output voltage swing and temperature compensation |
| US5589768A (en) * | 1990-07-30 | 1996-12-31 | Mitsubishi Steel Mfg. Co., Ltd. | Magnetoresistance-effect magnetic sensor of the temperature compensating type |
| CN101308199A (en) * | 2002-11-29 | 2008-11-19 | 雅马哈株式会社 | Magnetic sensor and method for compensating magnetic sensor temperature correlated characteristic |
| CN102288815A (en) * | 2011-08-31 | 2011-12-21 | 清华大学 | Temperature compensator for giant magneto-resistance effect current sensor |
| CN103257017A (en) * | 2011-12-29 | 2013-08-21 | 中国燃气涡轮研究院 | Compensation method for temperature drift of sensor |
| CN103412605A (en) * | 2013-07-17 | 2013-11-27 | 电子科技大学 | Higher-order temperature compensation non-resistor band-gap reference voltage source |
| WO2014208105A1 (en) * | 2013-06-28 | 2014-12-31 | 公立大学法人大阪市立大学 | Magnetic sensor element with temperature correction, and magnetic sensor and power measuring device using same |
-
2016
- 2016-11-18 CN CN201611032480.5A patent/CN106706005B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5589768A (en) * | 1990-07-30 | 1996-12-31 | Mitsubishi Steel Mfg. Co., Ltd. | Magnetoresistance-effect magnetic sensor of the temperature compensating type |
| US5402064A (en) * | 1992-09-02 | 1995-03-28 | Santa Barbara Research Center | Magnetoresistive sensor circuit with high output voltage swing and temperature compensation |
| CN101308199A (en) * | 2002-11-29 | 2008-11-19 | 雅马哈株式会社 | Magnetic sensor and method for compensating magnetic sensor temperature correlated characteristic |
| CN102288815A (en) * | 2011-08-31 | 2011-12-21 | 清华大学 | Temperature compensator for giant magneto-resistance effect current sensor |
| CN103257017A (en) * | 2011-12-29 | 2013-08-21 | 中国燃气涡轮研究院 | Compensation method for temperature drift of sensor |
| WO2014208105A1 (en) * | 2013-06-28 | 2014-12-31 | 公立大学法人大阪市立大学 | Magnetic sensor element with temperature correction, and magnetic sensor and power measuring device using same |
| CN103412605A (en) * | 2013-07-17 | 2013-11-27 | 电子科技大学 | Higher-order temperature compensation non-resistor band-gap reference voltage source |
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