CN106684166A - Dual-I-section type concentrating photovoltaic battery chip - Google Patents
Dual-I-section type concentrating photovoltaic battery chip Download PDFInfo
- Publication number
- CN106684166A CN106684166A CN201710125620.1A CN201710125620A CN106684166A CN 106684166 A CN106684166 A CN 106684166A CN 201710125620 A CN201710125620 A CN 201710125620A CN 106684166 A CN106684166 A CN 106684166A
- Authority
- CN
- China
- Prior art keywords
- layer
- photovoltaic cell
- negative electrode
- segment
- concentrating photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/215—Geometries of grid contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
本发明涉及一种双I段型聚光光伏电池芯片，属太阳能光伏发电技术领域，包括负电极段层，聚光光伏电池基材层，正电极层和有效面积，所述聚光光伏电池基材层一面覆上负电极段层，另一面覆上正电极层，所述负电极段层之外的部分为有效面积该种电池芯片能极大地减少聚光光伏电池基材材料的用量，这样就能减少聚光光伏电池芯片的制作成本，随着透镜聚光倍数的增高，增大电极段宽度的同时，通过调整电极为电极段，保持了受光面积的不变性，达到聚光光伏系统整体的发电效率不减少，通过增大负电极段的宽度，能保证在增大透镜的放大倍数之后，汇聚光转换为大电流电能能顺利通过负电极段导出来。
The invention relates to a double I-segment concentrating photovoltaic cell chip, belonging to the technical field of solar photovoltaic power generation, comprising a negative electrode section layer, a concentrating photovoltaic cell base material layer, a positive electrode layer and an effective area. The concentrating photovoltaic cell base One side of the material layer is covered with a negative electrode section layer, and the other side is covered with a positive electrode layer. The part outside the negative electrode section layer is the effective area. This kind of battery chip can greatly reduce the consumption of the base material of the concentrating photovoltaic cell, so that It can reduce the production cost of the concentrating photovoltaic cell chip. With the increase of the lens concentrating multiple, the width of the electrode segment is increased, and by adjusting the electrode to the electrode segment, the invariance of the light-receiving area is maintained, and the overall concentrating photovoltaic system is achieved. The power generation efficiency does not decrease, and by increasing the width of the negative electrode segment, it can be ensured that after increasing the magnification of the lens, the concentrated light is converted into high-current electric energy and can be smoothly exported through the negative electrode segment.
Description
技术领域technical field
本发明涉及一种光伏发电部件，具体涉及一种双I段型聚光光伏电池芯片，属太阳能光伏发电技术领域。The invention relates to a photovoltaic power generation component, in particular to a double I-segment concentrating photovoltaic cell chip, which belongs to the technical field of solar photovoltaic power generation.
背景技术Background technique
通常，聚光光伏发电系统所寻求的主要益处是在聚光光伏电池芯片的有效面积上得到从菲涅尔透镜汇聚的高密度太阳光。透镜的倍数越高，得到太阳光的密度越高，相同面积上使用的聚光光伏电池芯片越少，单位面积上的发电成本就越低。Generally, the main benefit sought by concentrated photovoltaic power generation systems is to obtain high-density sunlight concentrated from Fresnel lenses on the effective area of concentrated photovoltaic cell chips. The higher the multiple of the lens, the higher the density of sunlight obtained, the fewer concentrated photovoltaic cell chips used on the same area, and the lower the power generation cost per unit area.
目前通常从菲涅尔透镜汇聚过来的焦斑都为正方形，该焦斑的形状和大小也通常和聚光光伏电池芯片的形状和大小一致，从而使菲涅尔透镜汇聚过来的焦斑可以完全汇聚到聚光光伏电池芯片上。但是在实际应用中，聚光光伏电池芯片上的负电极层总是小于聚光光伏电池基材层，由于聚光光伏电池基材层上的基材材料相对很贵（一个平方厘米大小的基材材料大约在50元人民币左右），这样就极大浪费了聚光光伏电池基材层的基材材料；另外，随着透镜倍数的增高，聚光光伏电池芯片受光面上的电极将会增大，这样就会减小聚光光伏电池芯片的有效受光面积，同时由于透镜的汇聚率不可能达到100%，在有效受光面外面（特别是在聚光光伏电池芯片的电极上的汇聚光）的汇聚光也不能转换为电，这样也会大大降低聚光光伏系统的发电效率。At present, the focal spot gathered from the Fresnel lens is usually square, and the shape and size of the focal spot are usually consistent with the shape and size of the concentrated photovoltaic cell chip, so that the focal spot gathered by the Fresnel lens can be completely converged to the concentrator photovoltaic cell chip. But in practical application, the negative electrode layer on the concentrated photovoltaic cell chip is always smaller than the base material layer of the concentrated photovoltaic cell, because the base material on the base material layer of the concentrated photovoltaic cell is relatively expensive (a base material with a size of one square centimeter Material material is about 50 yuan), which greatly wastes the base material of the base material layer of the concentrating photovoltaic cell; in addition, as the lens multiple increases, the electrodes on the light-receiving surface of the concentrating photovoltaic cell chip will increase. Large, this will reduce the effective light-receiving area of the concentrating photovoltaic cell chip, and because the converging rate of the lens cannot reach 100%, outside the effective light-receiving surface (especially the concentrated light on the electrode of the concentrating photovoltaic cell chip) The concentrated light cannot be converted into electricity, which will greatly reduce the power generation efficiency of the concentrated photovoltaic system.
发明内容Contents of the invention
本发明的目的是提供一种双I段型聚光光伏电池芯片，该电池芯片在于克服现有技术的不足。The purpose of the present invention is to provide a double I-segment concentrating photovoltaic cell chip, which overcomes the deficiencies of the prior art.
为了实现上述技术目的，本发明采取的技术方案是：一种双I段型聚光光伏电池芯片，其特征是，它包括负电极段层，聚光光伏电池基材层，正电极层和有效面积，所述聚光光伏电池基材层一面覆上负电极段层，另一面覆上正电极层，所述负电极段层之外的部分为有效面积。In order to achieve the above-mentioned technical purpose, the technical solution adopted by the present invention is: a double I-segment type concentrator photovoltaic cell chip, characterized in that it includes a negative electrode segment layer, a concentrator photovoltaic cell substrate layer, a positive electrode layer and an effective One side of the base material layer of the concentrated photovoltaic cell is covered with a negative electrode segment layer, and the other side is covered with a positive electrode layer, and the part other than the negative electrode segment layer is the effective area.
所述负电极段层为平整I字形形状，负电极段层和聚光光伏电池基材层其中两个相对端面完全重合。The negative electrode segment layer is flat and I-shaped, and the two opposite end surfaces of the negative electrode segment layer and the substrate layer of the concentrated photovoltaic cell are completely overlapped.
所述聚光光伏电池基材层为GaInP（磷化铟嫁）/GaAs（砷化镓）/Ge（锗）三层组合体。The substrate layer of the concentrated photovoltaic cell is a three-layer combination of GaInP (indium phosphide)/GaAs (gallium arsenide)/Ge (germanium).
所述正电极层为一完全密封的平面，正电极层面积形状和聚光光伏电池基材层面积形状完全一样。The positive electrode layer is a completely sealed plane, and the area shape of the positive electrode layer is exactly the same as that of the substrate layer of the concentrated photovoltaic cell.
所述有效面积为正方形形状。The effective area is in the shape of a square.
本发明的优点和积极效果是：1、该种电池芯片能极大地减少聚光光伏电池基材材料的用量，这样就能减少聚光光伏电池芯片的制作成本，2、随着透镜聚光倍数的增高，增大电极段宽度的同时，通过调整电极为电极段，保持了受光面积的不变性，达到聚光光伏系统整体的发电效率不减少，3、通过增大负电极段的宽度，能保证在增大透镜的放大倍数之后，汇聚光转换为大电流电能能顺利通过负电极段导出来。The advantages and positive effects of the present invention are: 1. This kind of battery chip can greatly reduce the amount of substrate materials for concentrating photovoltaic cells, so that the production cost of concentrating photovoltaic cell chips can be reduced. By increasing the height of the electrode section and increasing the width of the electrode section, by adjusting the electrode to be an electrode section, the invariance of the light-receiving area is maintained, so that the overall power generation efficiency of the concentrated photovoltaic system does not decrease. 3. By increasing the width of the negative electrode section, it can It is ensured that after the magnification of the lens is increased, the concentrated light is converted into high-current electric energy and can be smoothly exported through the negative electrode segment.
附图说明Description of drawings
图1为一种双I段型聚光光伏电池芯片主视图。Fig. 1 is a front view of a double I-segment concentrator photovoltaic cell chip.
图2为一种双I段型聚光光伏电池芯片俯视图。Fig. 2 is a top view of a double I-segment concentrator photovoltaic cell chip.
其中：1、负电极段层，2、聚光光伏电池基材层，3、正电极层，4、有效面积。Among them: 1. Negative electrode section layer, 2. Concentrating photovoltaic cell substrate layer, 3. Positive electrode layer, 4. Effective area.
具体实施方式detailed description
下面结合附图对本发明作进一步的说明。The present invention will be further described below in conjunction with the accompanying drawings.
一种双I段型聚光光伏电池芯片，如图1～2所示，包括负电极段层1，聚光光伏电池基材层2，正电极层3和有效面积4，所述聚光光伏电池基材层2一面覆上负电极段层1，另一面覆上正电极层3，所述负电极段层1之外的部分为有效面积4，所述负电极段层1和聚光光伏电池基材层2其中两个相对端面完全重合，这样就完全利用了聚光光伏电池基材层，从而达到节约聚光光伏电池基材层基材材料的目的；另外增大负电极段的宽度，就能保证在增大透镜的放大倍数之后，汇聚光转换为大电流电能能顺利通过负电极段导出来，同时负电极段宽度的增大之外的有效面积和原负电极之外的有效面积不变。A double I-segment concentrating photovoltaic cell chip, as shown in Figures 1-2, includes a negative electrode segment layer 1, a concentrating photovoltaic cell substrate layer 2, a positive electrode layer 3 and an effective area 4, and the concentrating photovoltaic cell One side of the battery substrate layer 2 is covered with a negative electrode segment layer 1, and the other side is covered with a positive electrode layer 3. The part other than the negative electrode segment layer 1 is an effective area 4. The negative electrode segment layer 1 and the concentrated photovoltaic Two of the opposite end surfaces of the cell substrate layer 2 are completely overlapped, so that the substrate layer of the concentrating photovoltaic cell is fully utilized, thereby achieving the purpose of saving the substrate material of the substrate layer of the concentrating photovoltaic cell; in addition, the width of the negative electrode section is increased , it can ensure that after increasing the magnification of the lens, the concentrated light is converted into high-current electric energy and can be smoothly exported through the negative electrode segment. At the same time, the effective area outside the increase in the width of the negative electrode segment and the effective area outside the original negative electrode The area does not change.
本发明中，作为变行实施例，聚光光伏电池芯片的正电极层和负电极段层也可以交换过来设定制作，负电极段层和聚光光伏电池基材层其中任意两个相对端面完全重合，故本发明的权利保护范围以权利要求书限定的范围为准。In the present invention, as a modified example, the positive electrode layer and the negative electrode segment layer of the concentrating photovoltaic cell chip can also be exchanged to set and make, and any two opposite end faces of the negative electrode segment layer and the concentrating photovoltaic cell substrate layer completely overlap, so the protection scope of the present invention is subject to the scope defined in the claims.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710125620.1A CN106684166A (en) | 2017-03-04 | 2017-03-04 | Dual-I-section type concentrating photovoltaic battery chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710125620.1A CN106684166A (en) | 2017-03-04 | 2017-03-04 | Dual-I-section type concentrating photovoltaic battery chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106684166A true CN106684166A (en) | 2017-05-17 |
Family
ID=58862053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710125620.1A Pending CN106684166A (en) | 2017-03-04 | 2017-03-04 | Dual-I-section type concentrating photovoltaic battery chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106684166A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5580395A (en) * | 1994-07-19 | 1996-12-03 | Sharp Kabushiki Kaisha | Solar cell with integrated bypass function |
| CN102723379A (en) * | 2012-05-26 | 2012-10-10 | 成都聚合科技有限公司 | High-current-resistant concentrating photovoltaic cell piece |
| CN102881731A (en) * | 2012-10-14 | 2013-01-16 | 成都聚合科技有限公司 | Concentrating photovoltaic cell chip |
| CN103996731A (en) * | 2014-06-11 | 2014-08-20 | 成都聚合科技有限公司 | High-efficiency concentrating solar battery piece |
| CN103997288A (en) * | 2014-06-11 | 2014-08-20 | 成都聚合科技有限公司 | Concentrating solar cell |
| CN106876500A (en) * | 2017-03-04 | 2017-06-20 | 成都聚合追阳科技有限公司 | A kind of L segment types Condensation photovoltaic battery chip |
-
2017
- 2017-03-04 CN CN201710125620.1A patent/CN106684166A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5580395A (en) * | 1994-07-19 | 1996-12-03 | Sharp Kabushiki Kaisha | Solar cell with integrated bypass function |
| CN102723379A (en) * | 2012-05-26 | 2012-10-10 | 成都聚合科技有限公司 | High-current-resistant concentrating photovoltaic cell piece |
| CN102881731A (en) * | 2012-10-14 | 2013-01-16 | 成都聚合科技有限公司 | Concentrating photovoltaic cell chip |
| CN103996731A (en) * | 2014-06-11 | 2014-08-20 | 成都聚合科技有限公司 | High-efficiency concentrating solar battery piece |
| CN103997288A (en) * | 2014-06-11 | 2014-08-20 | 成都聚合科技有限公司 | Concentrating solar cell |
| CN106876500A (en) * | 2017-03-04 | 2017-06-20 | 成都聚合追阳科技有限公司 | A kind of L segment types Condensation photovoltaic battery chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203277399U (en) | A high-current concentrating photovoltaic cell | |
| CN103997289A (en) | High-efficiency concentrating solar battery chip | |
| CN204011445U (en) | A kind of enhancement mode concentrating solar battery chip | |
| CN106876500A (en) | A kind of L segment types Condensation photovoltaic battery chip | |
| CN103996732A (en) | Concentrating solar cell chip | |
| CN103997288A (en) | Concentrating solar cell | |
| CN106684166A (en) | Dual-I-section type concentrating photovoltaic battery chip | |
| CN103997292A (en) | High-efficiency concentrating solar battery piece | |
| CN205508793U (en) | Triangle -shaped stuck point | |
| CN104393057B (en) | The crystal silicon solar energy battery of trnamission capacity is improved with Graphene bus bar and busbar | |
| CN103996731A (en) | High-efficiency concentrating solar battery piece | |
| CN103996730A (en) | Concentrating solar cell | |
| CN106784055A (en) | A kind of resistance to high current Condensation photovoltaic battery chip of L segment types | |
| CN106684171A (en) | Dual I-section type large current resistant concentrating photovoltaic battery chip | |
| CN103996722A (en) | Enhanced efficient concentrating solar battery chip | |
| CN106684165A (en) | Mouth-shaped concentrating photovoltaic cell chip | |
| CN107046069A (en) | A kind of U segment types Condensation photovoltaic battery chip | |
| CN106684168A (en) | L-type large current resistant concentrating photovoltaic cell chip | |
| CN106711269A (en) | Single-I-band type large-current resistant concentrating photovoltaic cell chip | |
| CN106653885A (en) | Square high-current-resistant concentrated photovoltaic battery chip | |
| CN106684196A (en) | Single-I-shaped condensing photovoltaic cell chip | |
| CN106653882A (en) | Single I-type concentrating photovoltaic cell chip | |
| CN106684167A (en) | Double-I-type concentrating photovoltaic cell chip | |
| CN106684164A (en) | U-shaped concentrating photovoltaic cell chip | |
| CN106847947A (en) | A kind of L-type Condensation photovoltaic battery chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170517 |