CN106676493B - A kind of surface modifying method of ball pen pen tray - Google Patents

Abstract

The invention relates to a method for surface modification of a ballpoint pen holder, which comprises: performing preliminary surface cleaning on the pen holder; performing deep surface cleaning and polishing on the surface of the pen holder after surface cleaning, and performing ultrasonic cleaning and polishing during the cleaning and polishing process Oscillation; carry out ion implantation to the pen support after deep cleaning and polishing of the surface to form a "pinning layer", and perform ultrasonic oscillation during the ion implantation process; on the "pinning layer", deposit a film layer. The implementation of the present invention The method provided in the example, through the combination of ion implantation and deposition coating, significantly improves the surface hardness of the ballpoint pen holder, and can obtain a lower friction coefficient than tungsten carbide. Because the method is simple, easy to operate, and low in cost, High efficiency, very suitable for industrial mass production.

Description

A method for surface modification of ballpoint pen holder

technical field

The invention relates to the technical field of ballpoint pen manufacture, in particular to a method for surface modification of a ballpoint pen holder.

Background technique

The working principle of the existing ballpoint pen: under the double action of atmospheric pressure and ink gravity, the ink in the pen core flows into the ball seat of the nib and adheres to the ball. The writing principle of the ballpoint pen is to use the friction force generated by the direct contact between the ballpoint and the paper surface when writing, so that the ballball rolls in the ball seat, and the ink (ink) in the plastic refill is brought out to form handwriting.

The nib of a ballpoint pen is composed of two core components: a metal ball (also called a pen ball), and a tapered metal base (also called a ball seat or a pen holder). The ball is a pure ball, but the ball seat is not a simple bowl shape, but has various small grooves, the processing process is very complicated, and the requirements for precision are also very high. Due to the high pressure needed to bear when writing, the pen ball and pen holder of the nib need to be made of very hard and wear-resistant materials. The most commonly used materials are stainless steel and tungsten carbide. The latter is of good quality, and it can be written smoothly no matter how long it is used, but the hardness of tungsten carbide is too high, it is difficult to process, and the processing cost is high. Compared with tungsten carbide, stainless steel has low hardness and is not wear-resistant, which greatly reduces the life of the ballpoint pen.

Contents of the invention

In order to solve the above problems, it is necessary to modify the surface of stainless steel to increase its hardness and wear resistance. Support the life of the ballpoint pen, and at the same time reduce the cost of the ballpoint pen.

In view of this, an embodiment of the present invention provides a method for surface modification of a ballpoint pen holder, comprising the following steps: S110, performing preliminary surface cleaning on the pen ball; S120, performing deep surface cleaning on the surface of the pen holder after surface cleaning , polishing, and ultrasonic oscillation during the cleaning and polishing process; S130, perform ion implantation on the pen holder after surface deep cleaning and polishing to form a "pinning layer", and perform ultrasonic oscillation during the ion implantation process; S140, in the On top of the "pinned layer", a film layer is deposited.

Preferably, a gas ion source is used to clean and polish the surface of the pen ball.

Further preferably, the ion source is a Hall source.

Preferably, heat treatment is performed during the surface ion implantation process.

Preferably, the implanted element of the ion implantation is metal element Ti, Cr, C, Co or Hf.

Preferably, the ion implantation equipment is metal vapor vacuum arc MEVVA ion implantation equipment.

Preferably, the beam diameter during ion implantation is 800mm.

Preferably, a magnetically filtered cathodic vacuum arc system is used for depositing the film layer.

Preferably, the film layer is a diamond-like DLC film layer.

Preferably, the thickness of the film layer is 0-3 μm.

Compared with the prior art, the embodiments of the present invention have the following advantages:

(1) An effective "pinning layer" is formed on the subsurface of the substrate by ion implantation technology, and the subsequent film layer can be combined with the "pinning layer" very well, compared with magnetron sputtering and multi-arc ion plating As well as methods such as chemical vapor deposition, the bonding force between the film layer and the substrate prepared by the present invention is superior.

(2) Compared with deposition methods such as magnetron sputtering, electroplating deposition, and electron beam evaporation, the atomic ionization rate of magnetic filter cathode vacuum arc equipment is very high, about 95%. In this way, due to the high atomic ionization rate, the plasma density can be increased, and the large particles can be reduced during film formation, which is beneficial to improve the film hardness, wear resistance, compactness, and film-base bonding force.

(3) By adjusting the plasma transport path, an ultra-high hardness and ultra-wear-resistant diamond-like film can be prepared. This technology can prepare an ultra-thick pure diamond-like DLC film with a film thickness of up to 20 microns. The film hardness is greater than 80Gpa.

Description of drawings

The drawings constituting the embodiments of the present invention are used to provide further understanding of the embodiments of the present invention, and do not constitute limitations to the present invention.

Fig. 1 is the ballpoint pen refill structure schematic diagram that the embodiment of the present invention provides;

Fig. 2 is a schematic flow chart of surface modification of a ballpoint pen holder provided by an embodiment of the present invention;

Fig. 3 is the test result figure of friction coefficient of stainless steel without surface treatment;

Fig. 4 is the friction coefficient test result figure of the stainless steel with deposited DLC film layer;

Figure 5 is a diagram of the test results of the coefficient of friction of tungsten carbide.

Explanation of reference signs:

1—refill body; 2—pen ink; 3—pen support; 4—pen ball;

Detailed ways

The technical solutions of the present invention will be described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that these examples are only used for more detailed description, but are not intended to limit the protection scope of the present invention.

In addition, it should be noted that this section generally describes the materials and test methods used in the experiments of the present invention. While many of the materials and methods of manipulation which are employed for the purposes of the invention are well known in the art, the invention has been described here in as much detail as possible. It will be apparent to those skilled in the art that, in the context and context, the materials used and methods of operation used in the present invention are known in the art unless otherwise indicated.

Embodiment one

Fig. 1 is the schematic structural diagram of the ball-point pen refill that the embodiment of the present invention provides, as shown in Fig. 1, the refill of ball-point pen comprises refill body 1, pen and ink 2, pen support 3 and pen ball 4, and in use writing process, pen ball 4. Direct contact with the paper surface generates frictional force, so that the pen ball 4 rolls in the pen holder 3, and brings out the pen and ink 3 in the refill body 1 to form handwriting. However, stainless steel has low hardness and is not wear-resistant, so that the service life of the ball-point pen with stainless steel as the base material for the "pen holder" is not high. This embodiment provides a surface modification method for the ball-point pen holder. "Pen holder" for preliminary cleaning and deep cleaning, and then ion implantation to form a "pinning layer" on the subsurface of the substrate to increase the bonding force between the subsequent film layer and the substrate, and finally deposit coating to enhance the durability of the stainless steel "pen holder" Grinding, improve the service life of the ballpoint pen. Fig. 2 is a schematic flow chart of surface modification of a ballpoint pen holder provided by an embodiment of the present invention. As shown in Fig. 2, the method includes the following steps:

S110, initially cleaning the surface of the pen holder.

In one example, in order to remove oil stains on the surface of the pen holder, the pen holder is preliminarily cleaned, optionally, it is ultrasonically cleaned in an organic solvent, for example, it is ultrasonically cleaned in absolute ethanol or acetone.

S120, perform deep surface cleaning and polishing on the surface of the pen holder after surface cleaning, and perform ultrasonic oscillation during the cleaning and polishing process.

That is, the surface of the pen holder processed in step S110 is deeply cleaned and polished. In one example, deep cleaning is performed on the surface of the pen holder to remove dust, large particles and residual oil not removed in step S110. Specifically, the initially cleaned pen holder is placed on the sample stage in the vacuum chamber, and then its surface is cleaned by a gas ion source, that is, the surface is cleaned by gas sputtering, for example, the surface of a stainless steel sheet is cleaned by a Hall source. To clean, that is, to clean the surface of the pen holder through the Hall gas ion source. It should be noted that for the thoroughness of the pen holder cleaning, the sample stage needs to be accompanied by ultrasonic oscillation during the cleaning process to ensure that all parts of the pen holder can be cleaned. As an optional embodiment, the treatment time is 0-30 min, preferably 20-30 min. During processing, the gas ion source beam current was 200-300mA. Deep cleaning can not only remove impurities on the surface of the pen holder, but also play a polishing role to make the surface smoother, reduce the coefficient of friction, and improve the bonding force between the "pinning layer" formed by subsequent ion implantation and the pen holder.

S130, performing ion implantation on the pen holder after surface cleaning and polishing to form a "pinning layer", and performing ultrasonic oscillation during the ion implantation process.

That is, ion implantation is performed on the pen holder after step S120, specifically, high-energy metal ions or non-metallic ions are used to implant the base of the pen holder to form a "pinning layer" to improve the bonding force between the subsequently deposited film layer on the surface and the base of the pen holder .

In one example, ion implantation is performed on the pen holder after surface cleaning and polishing by ion implantation, specifically metal ion implantation. During this process, the ion implantation equipment is preferably a metal vapor vacuum arc (Metal ValuumeVapor avc, MEVVA) Ion implantation equipment. The implanted elements, in principle, can be implanted with all conductive metal elements, preferably Ti, Cr, C, Co, Hf and other elements. In a feasible implementation, the beam intensity during ion implantation is 5-20 mA, preferably 10-15 mA; the dose during ion implantation is 1×10 ¹⁶ -1×10 ¹⁸ /cm ² ; the implantation energy is 10-100 KeV . Preferably, the implantation depth during ion implantation is 10-800 nm. MEVVA ion implantation equipment has a large beam area during ion implantation, and its beam diameter can reach 800mm, so it can realize the processing of large batches of pen holders, with low cost and high efficiency.

It should be noted that for the uniformity and comprehensiveness of the ion implantation of the pen holder, it is necessary to accompany the ultrasonic vibration on the sample stage to ensure that all parts of the pen holder can be injected with elements.

In addition, when MEVVA ion implantation equipment is implanting ions, the temperature inside the equipment can be selected, that is, high temperature doping can be achieved, and doping at room temperature or low temperature can also be achieved. For high-temperature doping, a heating tank can be installed under the sample stage during ion implantation, or a heating tube can be installed in the vacuum chamber to heat the pen holder. For example, the pen holder can perform ion implantation within the range of 25°C to 500°C , which is conducive to the diffusion of ions to the depth of the pen holder, making it better in wear resistance and longer in service life of the ballpoint pen.

S140, depositing a film layer on the "pinning layer".

In one example, a magnetically filtered cathodic vacuum arc (FCVA) system is used to deposit magnetically on the surface of the "pinning layer" of the substrate, and at the same time, a reactive gas is introduced to obtain a wear-resistant film layer. In this step, optionally, the film layer is a diamond-like DLC film, and the thickness of the DLC film is 0-3 μm. In a feasible implementation manner, the deposition conditions are as follows: the deposition negative pressure is 300V-800V, the duty cycle is 20%-100%, the gas flow is 200-300 sccm, and the deposition time is 50-100 min.

The method for improving the surface hardness of the ballpoint pen holder and reducing the coefficient of friction provided in this embodiment is mainly to use the magnetic filter cathode vacuum arc system to deposit and coat a film with high hardness, high density and strong film binding force on the surface of the holder. Thin film to enhance the wear resistance of the stainless steel "pen holder" and increase the service life of the ballpoint pen. In addition, before the deposition of the coating, a "pinning layer" is formed on the subsurface of the substrate by ion implantation, which further increases the bonding force between the subsequent deposited film and the substrate and improves the wear resistance of the film. , reducing its coefficient of friction.

In order to better reflect the use of the technical solution provided by the present invention, the pen holder can obtain better wear resistance. For the pen holder without surface modification, the pen holder with deposited film layer and the "pen holder" with tungsten carbide as the base material " for a performance comparison.

It should be noted that the wear resistance test was carried out on the three kinds of pen rests mentioned above, and their friction coefficients were observed. The above three kinds of pen holders were all ground against the "pen ball" made of untreated stainless steel, and their wear resistance was measured. Among them, the conditions of the grinding test are the same, for example, the experimental equipment is the same, the grinding time is the same, and so on. The following takes stainless steel sheet as an example to introduce in detail the surface modification method of the "pen rest" with stainless steel as the base material.

Embodiment two

The stainless steel sheet was selected without surface modification, and it was ground against an untreated stainless steel sheet to measure its wear resistance. The specific test results of the friction coefficient are shown in Figure 3.

Embodiment three

Utilize the method that embodiment one provides, carry out surface modification treatment with stainless steel sheet, implementation steps are as follows:

S110, preliminary cleaning:

Ultrasonic cleaning was performed on the stainless steel sheet in absolute ethanol to initially remove the oil on the surface of the pen ball.

S120, deep cleaning, polishing:

Put the pre-cleaned stainless steel sheet on the sample stage in the vacuum chamber, the Hall gas ion source cleans the surface of the stainless steel sheet, and the sample stage is accompanied by ultrasonic oscillation. The implantation conditions are: the beam current of the Hall gas ion source is 260mA, and the processing time is 26min.

S130, ion implantation:

The stainless steel sheet was implanted with MEVVA ion implantation equipment, the implanted element was Ti element, the implanted energy was 80KeV, and the implanted dose was 6×10 ¹⁶ /cm ² .

S140, depositing a film layer:

Utilize 180 degree magnetic filtration elbow to deposit DLC thin film on the stainless steel sheet after step S130 process, in the deposition process, pass into acetylene gas, deposition arc source is the Ti arc source of purity 99%, C cathode arc starting current is 110A, magnetic The intensity of the filtering magnetic field is 10mT, the negative pressure is 400V, the duty cycle is 35%, and the deposition time is 75min.

The wear resistance test of the stainless steel sheet after the above treatment was carried out subsequently, and the specific test results of the friction coefficient are shown in Fig. 4 . In addition, thickness measurement and hardness test were also carried out on it, and the thickness of the obtained film layer measured after treatment was 20 microns, and the hardness was greater than 80Gpa.

Embodiment four

The tungsten carbide substrate was selected without surface modification, and it was ground against an untreated stainless steel sheet to measure its wear resistance. The specific test results of the friction coefficient are shown in Figure 5.

It can be seen from Figure 3-Figure 5 that the friction coefficient of untreated stainless steel sheet is the largest, about 0.65, followed by tungsten carbide, about 0.38, and the friction coefficient of deposited stainless steel sheet is the smallest, about 0.09. The friction coefficient of the stainless steel sheet after the deposition coating treatment is reduced by more than 6 times, that is, its wear resistance is increased by more than 6 times, and it is 4 times that of the tungsten carbide substrate. That is, the surface modification method provided by the present invention significantly reduces the friction coefficient of the "pen holder" with stainless steel as the base material. In other words, the surface modification method provided by the present invention can significantly improve the The hardness of the "pen holder" enhances the wear resistance of the stainless steel "pen holder" and improves the service life of the ballpoint pen.

The method for improving the surface hardness of the ballpoint pen holder and reducing the coefficient of friction provided in this embodiment is mainly to use the magnetic filter cathode vacuum arc system to deposit and coat the surface of the pen holder to form a film with high hardness, high density and strong film bonding force. Thin film to enhance the wear resistance of the stainless steel "pen holder" and increase the service life of the ballpoint pen. In addition, before the deposition of the coating, a "pinning layer" is formed on the subsurface of the substrate by ion implantation, which further increases the bonding force between the subsequent deposited film and the substrate and improves the wear resistance of the film. , reducing its coefficient of friction. That is, the method provided by the embodiment of the present invention obviously improves the surface hardness of the ballpoint pen holder through the combination of ion implantation and deposited coating, and can obtain a lower friction coefficient than tungsten carbide. Because of its simple method, easy operation, low cost and high efficiency, it is very suitable for industrial mass production.

It should be noted that although the present invention has been described to a certain extent, it will be obvious that appropriate changes can be made in various conditions without departing from the spirit and scope of the present invention. It is to be understood that the present invention is not limited to the described embodiments, but rather falls within the scope of the claims, which include equivalents to each of the elements described.

The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the scope of the present invention. Protection scope, within the spirit and principles of the present invention, any modification, equivalent replacement, improvement, etc., shall be included in the protection scope of the present invention.

Claims (7)

1. a kind of surface modifying method of ball pen pen tray, which comprises the following steps:

S110 carries out surface to the pen tray and tentatively cleans；

S120, the pen tray surface after surface clean carry out case depth cleaning, polishing, and in depth cleaning, polishing process Sonic oscillation is carried out, sample stage is with ultrasonic vibration in the process；

S130, using metal vapor vacuum arc MEVVA ion implantation device to case depth cleaning, polishing after pen tray carry out from Son injection, the beam diameter when ion implanting are 800mm, are formed " pinning layer ", and surpassed in ion implantation process Sound oscillation, sample stage is with ultrasonic vibration in the process；

S140, using filtered cathodic vacuum arc equipment on " pinning layer ", depositional coating.

2. the method according to claim 1, wherein carrying out surface to the pen tray surface using gas ion source Depth cleaning, polishing.

3. according to the method described in claim 2, it is characterized in that, the ion source is Hall source.

4. the method according to claim 1, wherein being carried out at heating in carrying out surface ion injection process Reason.

5. the method according to claim 1, wherein the injection element of the ion implanting be element ti, Cr, C, Co or Hf.

6. the method according to claim 1, wherein the film layer is diamond-like DLC film layer.

7. the method according to claim 1, wherein the thickness of the film layer is less than or equal to 3 μm.