CN106655867A - Half-bridge driving circuit formed by discrete MOSFET - Google Patents
Half-bridge driving circuit formed by discrete MOSFET Download PDFInfo
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- CN106655867A CN106655867A CN201710102011.4A CN201710102011A CN106655867A CN 106655867 A CN106655867 A CN 106655867A CN 201710102011 A CN201710102011 A CN 201710102011A CN 106655867 A CN106655867 A CN 106655867A
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- 239000003990 capacitor Substances 0.000 claims abstract description 21
- 230000005611 electricity Effects 0.000 claims description 12
- 239000003381 stabilizer Substances 0.000 claims description 9
- 230000010354 integration Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
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- 239000000686 essence Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
- H02M7/53873—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with digital control
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/539—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
- H02M7/5395—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Direct Current Motors (AREA)
- Electronic Switches (AREA)
Abstract
The invention discloses a half-bridge driving circuit formed by discrete MOSFET. The half-bridge driving circuit comprises a half-bridge driving circuit, a power half-bridge circuit and a bootstrapping-capacitor charging circuit, wherein the half-bridge driving circuit is connected between a busbar voltage and a power ground, an input control end is connected to a PWM output pin of a microprocessor; an upper half-bridge driving signal output end and a lower half-bridge driving signal output end of the driving circuit and respective ground terminal are connected with the power half-bridge circuit; the driving circuit uses a single MOSFET as an active device, the upper half-bridge driving and the lower half-bridge driving only use three MOSFETs; compared with the traditional triode driving circuit, the output current of the half-bridge driving circuit is large, the half-bridge driving circuit is easy for module integration, and has cost advantage in comparison with the scheme using a driving chip; the bootstrapping-capacitor charging circuit is connected with an upper half-bridge driving power source end and an upper half-bridge driving floating ground terminal at the same time, and the bootstrapping-capacitor charging circuit and the driving circuit shares the low-voltage power input. The half-bridge driving circuit disclosed by the invention is compact in structure, fast in driving speed, easy to integrate, and suitable for the driving of various power half-bridge circuits.
Description
Technical field
The present invention relates to half-bridge drive circuit, the half-bridge drive circuit that more particularly to a kind of discrete MOSFET is constituted.
Background technology
Power field effect transistor（MOSFET）As high power switch and high-speed switching devices, in Power Electronic Technique
It is used widely, particularly Motor Control Field.In Motor drive application, power MOSFET tube goes out in half-bridge circuit form
It is existing, it is divided into upper and lower half-bridge.Wherein go up the drain electrode of half-bridge power tube and connect bus power supply, source electrode is connected with the drain electrode of lower half-bridge, lower half-bridge
Source electrode connect Power Groud, the output end of the common port of upper and lower half-bridge power pipe as half-bridge.
The switch of power tube is determined by the voltage between its grid and source electrode, and switch motion is logically defeated by microcontroller
The pulsewidth modulation for going out（PWM）Signal determines.The electric charge that the voltage of grid source electrode substantially has grid capacitance determines, with grid capacitance
Discharge and recharge, the voltage of its grid source electrode produces change, so as to power tube on or off.The charging and discharging currents of grid capacitance moment
Larger, the pwm signal of general microcontroller is not enough to directly drive power tube, needs to consider the half-bridge driven electricity that design is special
Road, drive circuit is substantially also a kind of power circuit.
In electric machine controller, often three using three half-bridge circuits for motor mutually provide driving current.In existing program,
Half-bridge drive circuit can select integrated driving chip or be built using discrete electronic component.Using the electricity of discrete electronic component
Road has using the drive circuit of triode and using triode and the hybrid driving circuit of MOSFET again.
Fig. 1 is a kind of half-bridge drive circuit completed using integrated half-bridge driven chip, and chip completes the upper and lower work(of half-bridge
The driving respectively of rate pipe, and complete the process of half-bridge floating ground using peripheral diode and electric capacity composition boostrap circuit.This side
Case is completed around driving chip, simple circuit, but because the price high cost of driving chip it is of a relatively high.
Fig. 2 be for reduces cost, the drive circuit built using pure triode it include half-bridge circuit 1, drive circuit 2
With charging bootstrap capacitor circuit 3.The signal input part of drive circuit 2（U+、U-）SCM PWM control interface is connected to, is driven
Upper half-bridge drive signal output end on circuit 2（GUH）, upper half-bridge driven floating ground terminal, lower half-bridge drive signal output end
（GUL）Drivingly hold with lower half-bridge and be connected with half-bridge circuit 1.Drive circuit 2 accesses the PWM control letters of single chip control unit
Number, pwm control signal is conveyed to the MOSFET of the half-bridge up and down pipes of half-bridge circuit 1, to drive half Jing after drive circuit Current amplifier
Bridge circuit 1 works.Charging bootstrap capacitor circuit 3 simultaneously with drive circuit 2 on upper half-bridge driven floating power supply end and upper half-bridge
Floating ground terminal is driven to be connected, charging bootstrap capacitor circuit 3 is that drive circuit 2 provides the floating voltage that flash drives.And boot
Capacitor charging circuit 3 shares low-tension supply input with drive circuit 2（12V～15V）.
Half-bridge circuit 1 includes upper half-bridge circuit and lower half-bridge circuit, wherein upper half-bridge circuit is included：MOSFET pipe Q4H, drive
Dynamic resistance R7H, filter capacitor C3H and resistance R8H；Lower half-bridge circuit is included：MOSFET pipe Q4L, driving resistance R7L, filtered electrical
Hold C3L and resistance R8L.Upper half-bridge circuit MOSFET pipes Q4H drain electrode is connected with bus power supply VBUS, source electrode and lower half-bridge MOSFET
The drain electrode of pipe Q4L is connected, and the source electrode of lower half-bridge MOSFET pipe Q4L is connected with Power Groud, and pull down resistor RS1 is connected to upper and lower half
Between the common port and Power Groud of bridge MOSFET pipe Q4H, Q4L.
With the raising of power grade, the hybrid driving circuit of triode and MOSFET is employed.Fig. 3 is a kind of realization side
Formula, wants than the transistor drive circuit in Fig. 2, increased two MOSFET pipes to improve the driving energy of drive circuit in final stage
Power, increases electric current and accelerates actuating speed, and detailed circuit is described referring to existing patent（CN105322948A half-bridge drivens electricity
Road）.
Though more than several drive circuits can driving power half-bridge, have certain limitation.Or high cost, or
Circuit is complicated to drive time delay big, and provides a kind of drive circuit of inexpensive, the little time delay of compact conformation and seem particular importance.
The content of the invention
The present invention seeks to：To overcome the deficiencies in the prior art, the present invention to provide a kind of discrete MOSFET and constitute
Half-bridge drive circuit, its compact conformation, low cost, time delay are little, driving current is big, can meet the half-bridge circuit of relatively high power
Drive and require.
The technical scheme is that：
The half-bridge drive circuit that a kind of discrete MOSFET is constituted, including the power half-bridge circuit that drive circuit and its connection drive；
The power half-bridge circuit includes upper half-bridge and lower half-bridge, is sequentially connected in series between busbar voltage and Power Groud；It is described to drive electricity
Road includes that upper half-bridge driven and the control signal input of lower half-bridge driven, upper half-bridge driven and lower half-bridge driven are connected respectively to
The PWM output pins of single-chip microcomputer, drive signal output end connect respectively the control end of half-bridge and lower half-bridge；
The upper half-bridge driven includes p-type MOSFET Q1 and N-type MOSFET Q2, Q4；
The source electrode connection low-tension supply input of wherein Q1, the drain electrode of Q1 is by half-bridge drive signal output in resistance R1 connections
End, the grid of Q1 resistance R3, electric capacity C3 in parallel connects the drain electrode of Q4, is also associated between the grid and source electrode of Q1 in parallel
Resistance R2, voltage-stabiliser tube D2；
The wherein grid of Q4 resistance R7, electric capacity C4 in parallel connects the PWM output pins of single-chip microcomputer, the source electrode connection work(of Q4
Common port between the upper half-bridge of rate half-bridge circuit and lower half-bridge, the drain electrode of Q4 is connected to the grid electrode drive module of Q2；The Q2
Source electrode and drain electrode connect respectively the source electrode and upper half-bridge drive signal output end of Q4.
Preferably, the grid electrode drive module of the Q2 includes resistance R5, diode D3 and the electric capacity C2 being mutually in parallel, and
The voltage-stabiliser tube D4 being connected between the grid of Q2 and source electrode.
Preferably, also including charging bootstrap capacitor circuit, the charging bootstrap capacitor circuit includes diode D1 and electrolysis
Electric capacity C1, the diode D1 is connected on the bus of low-tension supply input, and the positive pole and negative pole of electrochemical capacitor C1 connect respectively
Connect the common port between the negative electrode of diode D1 and the upper half-bridge of power half-bridge circuit and lower half-bridge.
Preferably, the upper half-bridge of the power half-bridge circuit and lower half-bridge are respectively adopted N-type MOSFET Q3 and Q5, described
The drain electrode connection busbar voltage of the Q3 of upper half-bridge, source electrode connects the drain electrode of Q5, and both common ports are connected to the corresponding phase of motor
Line, the source electrode of Q5 is connected to Power Groud.
Preferably, the reference ground of the upper half-bridge driven of the drive circuit has the voltage for floating, and it is completed to upper half-bridge
The driving of MOSFET pipe Q3；Lower half-bridge driven is fixed with reference to ground voltage, completes the driving to lower half-bridge MOSFET pipe Q5.
Preferably, the lower half-bridge driven includes p-type MOSFET Q6 and N-type MOSFET Q7, Q8；
The source electrode connection low-tension supply input of wherein Q6, the drain electrode of Q6 is by the lower half-bridge drive signal output of resistance R8 connections
End, the grid of Q6 resistance R11, electric capacity C7 in parallel connects the drain electrode of Q8, is also associated with simultaneously between the grid and source electrode of Q6
The resistance R13 of connection, voltage-stabiliser tube D5；
The wherein grid of Q8 resistance R15, electric capacity C8 in parallel connects the PWM output pins of single-chip microcomputer, the source electrode connection of Q8
Power Groud, the drain electrode of Q8 is also connected to the grid of Q7 by driving resistance R12, and the Q7 source electrodes and drain electrode connect respectively Power Groud
With lower half-bridge drive signal output end, resistance R14 is also associated between Q7 source electrodes and grid.
Preferably, it is connected with resistance RS1 between the common port and Power Groud of the upper and lower half-bridge of the power half-bridge circuit.
It is an advantage of the invention that：
1. the present invention provides to obtain the half-bridge drive circuit that constitutes of discrete MOSFET, and upper and lower half-bridge is each discrete only with three
MOSFET is managed, and completes the driving of relatively high power half-bridge circuit, and logic be input to power drive output time delay it is less, knot
Structure is compact, it is easy to which follow-up modularization is integrated.
2. the MOSFET tube grids of MOSFET drive tube of the present invention and power half-bridge are connected using current-limiting resistance, while low
The high_voltage isolation MOSFET pipes that the conversion of pressure and high-pressure section is connected by, the capacitance-resistance parallel circuit of its grid concatenation can to strengthen
By property and raising converting transmission speed.
3. the half-bridge power MOSFET pipes of the present invention are connected in series using two N-types MOFET, and the source electrode of upper pipe connects down tube
Drain electrode, and as power take-off, be joined directly together for the phase line with motor.Between output end and Power Groud and connect one simultaneously
Big resistance, is charging bootstrap capacitor when powering up for bus, improves stability.
Description of the drawings
Below in conjunction with the accompanying drawings and embodiment the invention will be further described：
Fig. 1 is existing use integrated chip half-bridge drive circuit schematic diagram.
Fig. 2 is existing triode half-bridge drive circuit schematic diagram；
Fig. 3 is existing triode and MOSFET hybrid driving circuit schematic diagrams；
Fig. 4 is the half-bridge drive circuit schematic diagram that discrete MOSFET of the invention is constituted.
Wherein：1st, power half-bridge circuit；2nd, half-bridge drive circuit；3rd, charging bootstrap capacitor circuit.
Specific embodiment
With reference to concrete drawings and Examples, the invention will be further described.
As shown in figure 4, the half-bridge drive circuit that the present invention is provided includes power half-bridge circuit 1, drive circuit 2 and bootstrapping electricity
Capacity charge circuit 3.Wherein, the connection of power half-bridge circuit 1, charging bootstrap capacitor circuit 3 and traditional half-bridge drive circuit and
Function all same, no longer describes in detail.The signal input part of drive circuit 2（U+、U-）It is connected to PWM control ports, the letter of single-chip microcomputer
Number output end（GUH、GUL）It is connected to the input port of half-bridge circuit 1；The floating ground terminal of upper half-bridge drive circuit and bootstrap capacitor
The common port of the output end of charging circuit and upper and lower half-bridge circuit（That is motor phase line）It is connected；In addition, drive circuit 2 and bootstrapping electricity
Capacity charge circuit 3 shares low-tension supply（12V～15V）Input.Drive circuit 2 is described in more detail below.
As shown in figure 4, drive circuit 2 includes upper half-bridge drive circuit and lower half-bridge drive circuit, wherein upper half-bridge driven
Circuit is included：High-pressure N-shaped MOSFET Q4, gate protection resistance R7, speed-up capacitor C4；Output high level drives p-type MOSFET
Q1, and its gate protection resistance R3, speed-up capacitor C3, and divider resistance R2, voltage-stabiliser tube D2；Output low level drives N-type
MOSFET Q2, gate charges accelerating resistor C2, reverse isolation diode D3, divider resistance R5, voltage-stabiliser tube D4, and output limit
Leakage resistance R1.Lower half-bridge drive circuit is included：High-pressure N-shaped MOSFET Q8, gate protection resistance R15, speed-up capacitor C8；Output
High level drives p-type MOSFET Q6, output low level to drive N-type MOSFET Q7, divider resistance R11, R12, R13, R14, plus
Fast electric capacity C7, voltage-stabiliser tube D5, high level output current-limiting resistance R8.
The source of upper half-bridge power MOSFET tube Q3 is connected with the drain terminal of lower half-bridge power MOSFET tube Q5, forms half-bridge
The output end of circuit.In practical application, during half-bridge circuit motor, output end is directly connected with the phase line of motor, to
Driving current is provided to motor.
During present invention work, when the upper half-bridge MOSFET pipes Q3 for making half-bridge circuit 1 is turned on, then the input of drive circuit 2
Signal U+ is high level, U- is low level.When U+ is high level, metal-oxide-semiconductor Q4, Q1 conducting, Q2 cut-offs, the high electricity of signal GUH outputs
It is flat, the MOSFET pipe Q3 gate charges of half-bridge circuit 1, grid source electrode has positive voltage, so as to turn on；In contrast, U+ be low level,
When U- is high level, Q4, Q1 cut-off, Q2 conductings, so that the power MOSFET tube Q3 gate discharges of half-bridge circuit, so as to cut
Only turn off.
When the lower half-bridge MOSFET pipes Q5 for making half-bridge circuit 1 is turned on, then input signal U+ of drive circuit 2 is low electricity
Flat, U- is high level.U- be high level when, MOSFET Q8 conducting so that Q6 grid source levels be it is negative, so as to Q6 turn on, together
When, MOSFET Q7 grids are low level so as to end.Signal GUL exports high level so that power MOSFET tube Q5 is turned on, and
Now corresponding upper pipe Q3 cut-offs, so as to U phases are pulled to Power Groud, electric current reserves the U phases of motor.When U+ is that high level, U- are
During low level, Q8, Q6 cut-off, Q7 is opened, GUL output low levels, and corresponding GUH is high level, now pipe Q3 on half-bridge circuit
Conducting, down tube Q5 is closed, and U is connected bus power supply, the U phases of electric current stream stepper motor.
Have more in circuit and employ resistance and electric capacity structure in parallel, resistance and electric capacity have such as been concatenated at Q4 and Q8 grids simultaneously
It is coupled structure, when wherein resistance is to prevent contingency FET SG or DG from puncturing, for protecting PWM output circuits above.
And electric capacity C in parallel on R improves switching frequency mainly for accelerating opening and ending for field-effect electron electric power switch, reduce
Pipe is lost, and does not make the temperature rise of pipe too high.And the series resistor of half-bridge circuit power tube Q3 and Q5 is mainly used in grid capacitance
Current limliting during discharge and recharge, capacitance-resistance structure in parallel is mainly used in the filtering of gate voltage signal.
Above-described embodiment technology design only to illustrate the invention and feature, can not limit the protection model of the present invention with this
Enclose.The modification that all Spirit Essences according to main technical schemes of the present invention are done, all should cover protection scope of the present invention it
It is interior.
Claims (7)
1. the half-bridge drive circuit that a kind of discrete MOSFET is constituted, including the power half-bridge electricity that drive circuit and its connection drive
Road；The power half-bridge circuit includes upper half-bridge and lower half-bridge, is sequentially connected in series between busbar voltage and Power Groud；The driving
Circuit includes that upper half-bridge driven and the control signal input of lower half-bridge driven, upper half-bridge driven and lower half-bridge driven connect respectively
PWM output pins, drive signal output end to single-chip microcomputer connects respectively the control end of upper half-bridge and lower half-bridge, and its feature exists
In：
The upper half-bridge driven includes p-type MOSFET Q1 and N-type MOSFET Q2, Q4；
The source electrode connection low-tension supply input of wherein Q1, the drain electrode of Q1 is by half-bridge drive signal output in resistance R1 connections
End, the grid of Q1 resistance R3, electric capacity C3 in parallel connects the drain electrode of Q4, is also associated between the grid and source electrode of Q1 in parallel
Resistance R2, voltage-stabiliser tube D2；
The wherein grid of Q4 resistance R7, electric capacity C4 in parallel connects the PWM output pins of single-chip microcomputer, the source electrode connection work(of Q4
Common port between the upper half-bridge of rate half-bridge circuit and lower half-bridge, the drain electrode of Q4 is connected to the grid electrode drive module of Q2；The Q2
Source electrode and drain electrode connect respectively the source electrode and upper half-bridge drive signal output end of Q4.
2. the half-bridge drive circuit that discrete MOSFET according to claim 1 is constituted, it is characterised in that：The grid of the Q2
Drive module includes resistance R5, diode D3 and the electric capacity C2 being mutually in parallel, and is connected between the grid of Q2 and source electrode
Voltage-stabiliser tube D4.
3. the half-bridge drive circuit that discrete MOSFET according to claim 1 is constituted, it is characterised in that：Also include bootstrapping electricity
Capacity charge circuit, the charging bootstrap capacitor circuit includes diode D1 and electrochemical capacitor C1, and the diode D1 is connected on low
On the bus of voltage source input, the positive pole and negative pole of electrochemical capacitor C1 connect respectively the negative electrode and power half-bridge electricity of diode D1
Common port between the upper half-bridge on road and lower half-bridge.
4. the half-bridge drive circuit that discrete MOSFET according to claim 3 is constituted, it is characterised in that：The power half-bridge
The upper half-bridge of circuit and lower half-bridge are respectively adopted N-type MOSFET Q3 and Q5, the drain electrode connection bus electricity of the Q3 of the upper half-bridge
Pressure, source electrode connects the drain electrode of Q5, and both common ports are connected to the corresponding phase line of motor, and the source electrode of Q5 is connected to Power Groud.
5. the half-bridge drive circuit that discrete MOSFET according to claim 4 is constituted, it is characterised in that：The drive circuit
Upper half-bridge driven reference ground have float voltage, it completes the driving to upper half-bridge MOSFET pipe Q3；Lower half-bridge driven
Fix with reference to ground voltage, complete the driving to lower half-bridge MOSFET pipe Q5.
6. the half-bridge drive circuit that discrete MOSFET according to claim 1 is constituted, it is characterised in that：The lower half-bridge drives
It is dynamic to include p-type MOSFET Q6 and N-type MOSFET Q7, Q8；
The source electrode connection low-tension supply input of wherein Q6, the drain electrode of Q6 is by the lower half-bridge drive signal output of resistance R8 connections
End, the grid of Q6 resistance R11, electric capacity C7 in parallel connects the drain electrode of Q8, is also associated with simultaneously between the grid and source electrode of Q6
The resistance R13 of connection, voltage-stabiliser tube D5；
The wherein grid of Q8 resistance R15, electric capacity C8 in parallel connects the PWM output pins of single-chip microcomputer, the source electrode connection of Q8
Power Groud, the drain electrode of Q8 is also connected to the grid of Q7 by driving resistance R12, and the Q7 source electrodes and drain electrode connect respectively Power Groud
With lower half-bridge drive signal output end, resistance R14 is also associated between Q7 source electrodes and grid.
7. the half-bridge drive circuit that discrete MOSFET according to claim 4 is constituted, it is characterised in that：The power half-bridge
Resistance RS1 is connected between the common port and Power Groud of the upper and lower half-bridge of circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710102011.4A CN106655867A (en) | 2017-02-24 | 2017-02-24 | Half-bridge driving circuit formed by discrete MOSFET |
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| CN201710102011.4A CN106655867A (en) | 2017-02-24 | 2017-02-24 | Half-bridge driving circuit formed by discrete MOSFET |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994892A (en) * | 2017-11-28 | 2018-05-04 | 浙江中航通飞研究院有限公司 | A kind of on-off control device of heavy DC circuit |
| CN109980898A (en) * | 2017-12-14 | 2019-07-05 | 中国科学院沈阳自动化研究所 | A kind of H-bridge circuit with current-limiting function |
| CN110086334A (en) * | 2019-05-30 | 2019-08-02 | 深圳可立克科技股份有限公司 | The driving circuit and driving method and energy storage device of metal-oxide-semiconductor bridge circuit |
| CN110995081A (en) * | 2019-11-27 | 2020-04-10 | 佛山市顺德区美的洗涤电器制造有限公司 | Drive circuit, equipment and step motor drive circuit for direct current motor |
| CN111726053A (en) * | 2020-07-24 | 2020-09-29 | 乐歌人体工学科技股份有限公司 | An H-bridge motor drive circuit |
| CN111929612A (en) * | 2020-07-27 | 2020-11-13 | 浙江联宜电机有限公司 | Power-on protection detection circuit and power-on protection detection method for brushless motor controller |
| CN116827209A (en) * | 2023-06-30 | 2023-09-29 | 江苏环成玖源节能科技有限公司 | Enhanced driving circuit and servo driver applied by same |
| CN117498661A (en) * | 2023-11-07 | 2024-02-02 | 瑞森半导体科技(广东)有限公司 | Power supply management chip |
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Application publication date: 20170510 |