CN106653884A - U-section type heavy current resistant concentrating photovoltaic cell chip - Google Patents

Abstract

The invention relates to a U-segment type high-current-resistant concentrating photovoltaic cell chip, which belongs to the technical field of solar photovoltaic power generation, and includes a negative electrode segment layer, a concentrating photovoltaic cell substrate layer, a positive electrode layer and an effective area. One side of the battery substrate layer is covered with a negative electrode segment layer, and the other side is covered with a positive electrode layer. The part outside the negative electrode segment layer is the effective area. In this way, the production cost of the concentrating photovoltaic cell chip can be reduced; the U-shaped negative electrode of the cell chip can quickly lead out the current, reduce the impact of the current on ions in other battery materials, and can improve the conversion efficiency of the cell chip as a whole. Improvement, with the increase of the lens condensing factor, while increasing the width of the electrode segment, by adjusting the electrode to be an electrode segment, the invariance of the light receiving area is maintained, so that the overall power generation efficiency of the CPV system does not decrease, and by increasing the negative The length, width and thickness of the electrode segment can ensure that after the magnification of the lens is increased, the concentrated light is converted into high-current electric energy and can be smoothly exported through the negative electrode segment.

Description

A U-segment type high current resistant concentrated photovoltaic cell chip

technical field

The invention relates to a photovoltaic power generation component, in particular to a U-segment type high-current-resistant concentrating photovoltaic cell chip, which belongs to the technical field of solar photovoltaic power generation.

Background technique

Generally, the main benefit sought by concentrated photovoltaic power generation systems is to obtain high-density sunlight concentrated from Fresnel lenses on the effective area of concentrated photovoltaic cell chips. The higher the multiple of the lens, the higher the density of sunlight obtained, the fewer concentrated photovoltaic cell chips used on the same area, and the lower the power generation cost per unit area.

At present, the focal spot gathered from the Fresnel lens is usually square, and the shape and size of the focal spot are usually consistent with the shape and size of the concentrated photovoltaic cell chip, so that the focal spot gathered by the Fresnel lens can be completely converged to the concentrator photovoltaic cell chip. But in practical application, the negative electrode layer on the concentrated photovoltaic cell chip is always smaller than the base material layer of the concentrated photovoltaic cell, because the base material on the base material layer of the concentrated photovoltaic cell is relatively expensive (a base material with a size of one square centimeter The material material is about 50 yuan), which greatly wastes the base material of the base material layer of the concentrating photovoltaic cell; in addition, since the current on the negative electrode is generated by the collision of ions in the battery material, the ions The farther away from the negative electrode, the greater the loss of the current reaching the negative electrode, thereby reducing the photoelectric conversion efficiency; in addition, as the lens magnification increases, the electrodes on the light-receiving surface of the concentrating photovoltaic cell chip will increase, which will reduce the photoelectric conversion efficiency. The effective light-receiving area of the small concentrated photovoltaic cell chip, and because the concentration rate of the lens cannot reach 100%, the concentrated light outside the effective light-receiving surface (especially the concentrated light on the electrode of the concentrated photovoltaic cell chip) cannot be converted For electricity, this will also greatly reduce the power generation efficiency of the concentrating photovoltaic system. At the same time, with the increase of the lens multiple, the more sunlight will be collected on the concentrating photovoltaic cell chip, and the electric energy converted by the concentrating photovoltaic cell chip will be The more, the increase of electric energy directly leads to the increase of current, so it is easy to damage the negative electrode of the concentrated photovoltaic cell chip.

Contents of the invention

The purpose of the present invention is to provide a U-segment type high-current-resistant concentrating photovoltaic cell chip, which overcomes the shortcomings of the prior art.

In order to achieve the above technical purpose, the technical solution adopted by the present invention is: a U-segment type high-current-resistant concentrating photovoltaic cell chip, which is characterized in that it includes a negative electrode segment layer, a concentrating photovoltaic cell substrate layer, and a positive electrode layer. and the effective area, one side of the concentrator photovoltaic cell substrate layer is covered with a negative electrode segment layer, and the other side is covered with a positive electrode layer, and the part other than the negative electrode segment layer is the effective area.

The negative electrode section layer is a flat U-shaped shape, the negative electrode section has a length of 1 to 2 millimeters, a width of 0.5 to 1.5 millimeters, and a thickness of 0.5 to 1 millimeter. The negative electrode section layer and the concentrating photovoltaic cell substrate layer Three of the end faces are completely coincident.

The substrate layer of the concentrated photovoltaic cell is a three-layer combination of GaInP (indium phosphide)/GaAs (gallium arsenide)/Ge (germanium).

The positive electrode layer is a completely sealed plane, and the area shape of the positive electrode layer is exactly the same as that of the substrate layer of the concentrated photovoltaic cell.

The effective area is in the shape of a square.

The advantages and positive effects of the present invention are: 1. The battery chip can greatly reduce the consumption of base material of the concentrating photovoltaic cell, thus reducing the production cost of the concentrating photovoltaic cell chip; 2. The U-shaped negative electrode of the battery chip can quickly lead out the current, reduce the impact of the current on ions in other battery materials, and improve the conversion efficiency of the battery chip as a whole. At the same time as the width of the electrode segment, by adjusting the electrode to be an electrode segment, the invariance of the light-receiving area is maintained, and the overall power generation efficiency of the concentrated photovoltaic system is not reduced. 4. By increasing the length, width and thickness of the negative electrode segment, it can ensure After increasing the magnification of the lens, the concentrated light is converted into high-current electrical energy and can be smoothly exported through the negative electrode segment.

Description of drawings

Fig. 1 is a front view of a U-segment type high-current-resistant concentrated photovoltaic cell chip.

Fig. 2 is a top view of a U-segment type high-current-resistant concentrated photovoltaic cell chip.

Among them: 1. Negative electrode section layer, 2. Concentrating photovoltaic cell substrate layer, 3. Positive electrode layer, 4. Effective area.

detailed description

The present invention will be further described below in conjunction with the accompanying drawings.

A U-segment type high-current-resistant concentrating photovoltaic cell chip, as shown in Figures 1-2, includes a negative electrode segment layer 1, a concentrating photovoltaic cell substrate layer 2, a positive electrode layer 3 and an effective area 4. Photovoltaic cell base material layer 2 is covered with negative electrode segment layer 1 on one side, and positive electrode layer 3 is covered on the other side, and the part outside described negative electrode segment layer 1 is effective area 4, and described negative electrode segment layer 1 is a Flat U-shaped shape, the length of the negative electrode segment is 1-2 mm, the width is 0.5-1.5 mm, and the thickness is 0.5-1 mm. The three end faces of the negative electrode segment layer 1 and the concentrator photovoltaic cell substrate layer 2 are completely overlapped. , can quickly lead out the current, reduce the collision probability of the current to ions in other battery materials, thereby improving the conversion efficiency, and the three end faces of the negative electrode segment layer 1 and the concentrating photovoltaic cell substrate layer 2 are completely overlapped, so that they are completely The substrate layer of the concentrating photovoltaic cell is used to achieve the purpose of saving the substrate material of the substrate layer of the concentrating photovoltaic cell; in addition, increasing the width of the negative electrode segment can ensure that the concentrated light is converted after increasing the magnification of the lens Because the large current electric energy can be smoothly derived through the negative electrode segment, while the effective area outside the increase of the width of the negative electrode segment and the effective area outside the original negative electrode remain unchanged.

In the present invention, as a modified example, the positive electrode layer and the negative electrode segment layer of the concentrator photovoltaic cell chip can also be exchanged to set and manufacture, and any three end faces of the negative electrode segment layer and the concentrator photovoltaic cell substrate layer are completely overlap, so the protection scope of the present invention is subject to the scope defined in the claims.

Claims (5)

1. a kind of resistance to high current Condensation photovoltaic battery chip of U segment types, is characterized in that, it includes negative electrode section layer, condensation photovoltaic electricity Pond substrate layer, positive electrode layer and effective area, the Condensation photovoltaic battery base material is laminated to be covered with negative electrode section layer, and another side covers Upper positive electrode layer, the part outside the negative electrode section layer is effective area.

2. a kind of resistance to high current Condensation photovoltaic battery chip of U segment types according to claim 1, is characterized in that, the negative electricity Pole section layer is a smooth U-shaped shape, and the length of negative electrode section is 1 ~ 2 millimeter, and width is 0.5 ~ 1.5 millimeter, and thickness is 0.5 ~ 1 Millimeter, wherein three end faces of negative electrode section layer and Condensation photovoltaic battery substrate layer are completely superposed.

3. a kind of resistance to high current Condensation photovoltaic battery chip of U segment types according to claim 1, is characterized in that, the optically focused Photovoltaic cell substrate layer is GaInP（Indium phosphide is transferred）/GaAs（GaAs）/Ge（Germanium）Three layers of assembly.

4. a kind of resistance to high current Condensation photovoltaic battery chip of U segment types according to claim 1, is characterized in that, the positive electricity Pole layer is a plane for fully sealing, and positive electrode layer area shape and Condensation photovoltaic battery substrate layer area shape are just the same.

5. a kind of resistance to high current Condensation photovoltaic battery chip of U segment types according to claim 1, is characterized in that, described effective Area is square shape.