CN106653748B - How to use the corner of the integrated circuit - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 229910052755 nonmetal Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 3
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- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000010615 ring circuit Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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Abstract
Description
技术领域technical field
本发明涉及一种使用方法,特別是涉及一种集成电路角落的使用方法。The invention relates to a method for using, in particular to a method for using corners of integrated circuits.
背景技术Background technique
通常集成电路在设计时是会被设计成正方形,也有少数被设计成长方形的。Usually integrated circuits are designed as a square, and a few are designed as a rectangle.
无论集成电路的晶粒(Die)被设计成正方形或者长方形都有四个角落(Corner),被标记为Core的为内核区域,现在集成电路角落的使用方案概括起来有以下几种:Regardless of whether the die (Die) of an integrated circuit is designed as a square or a rectangle, there are four corners (Corner), and the one marked as Core is the core area. Now the use of integrated circuit corners can be summarized as follows:
一,空置,就是什么都不放;One, vacant, that is, nothing is left;
二,选择一个角落放置芯片的标记信息(LOGO);2. Select a corner to place the marking information (LOGO) of the chip;
三,保护环(Guardring);Three, guard ring (Guardring);
四,前述三条中任意两条同时使用;4. Any two of the above three items are used at the same time;
五,前述第一,第二,第三条同吋使用。5. Articles 1, 2, and 3 mentioned above apply simultaneously.
容易发现即使按照前述的第五条来利用集成电路的角落,也是存在硅片的浪费的。It is easy to find that even if the corner of the integrated circuit is utilized according to the fifth item above, there is a waste of silicon wafers.
特别是对于集成电路的电源、地及输入输出端口比较多的情况:为叙述方便,集成电路版图中“电源、地及输入输出端口”所对应的区域以下简称为IO-RING。Especially for the situation that there are many power supply, ground and input and output ports of the integrated circuit: for the convenience of description, the area corresponding to "power supply, ground and input and output ports" in the layout of the integrated circuit is hereinafter referred to as IO-RING.
现有技术会存在一个“内核区”(Core)和外围用于放置电源、地及输入输出端口的“IO-RING”以及四个角落(Corner);如果有较多的电源、地及输入输出端口而导致的集成电路外围一圈安排这些电路(电源、地及输入输出)特别紧张,这时通常会把实现同样功能(防静电,防止闩锁效应)的IO-RING电路橫向压缩、纵向拉伸,最终成为“瘦高”型的;如此一来,“瘦高”型的IO-RING集成电路的角落的面积是大于两侧都是“矮胖”型的IO-RING所形成的角落的面积。In the existing technology, there will be a "core area" (Core) and peripheral "IO-RING" for placing power, ground and input and output ports, and four corners (Corner); if there are more power, ground and input and output Arranging these circuits (power supply, ground and input and output) around the periphery of the integrated circuit caused by the port is particularly tense. At this time, the IO-RING circuit that achieves the same function (anti-static, preventing latch-up effect) is usually compressed horizontally and pulled vertically. Stretch, and finally become "thin and tall" type; in this way, the area of the corner of the "thin and tall" type IO-RING integrated circuit is larger than the corner formed by the "short and fat" type IO-RING on both sides area.
当两侧都是这种“瘦高”型IO-RING时,两边“瘦高”型的IO-RING就形成一个更大面积的集成电路角落(Corner),该角落所占用的硅片面积势必比较大,这类比较大面积的集成电路角落对应的硅片面积被浪费是很可惜的。When there are such "thin and tall" IO-RINGs on both sides, the "thin and tall" IO-RINGs on both sides will form a larger integrated circuit corner (Corner), and the silicon chip area occupied by this corner will inevitably be It is a pity that the silicon chip area corresponding to the corner of such a relatively large-area integrated circuit is wasted.
发明内容Contents of the invention
本发明所要解决的技术问题是提供一种集成电路角落的使用方法,其可提升集成电路硅片面积的有效使用率。The technical problem to be solved by the present invention is to provide a method for using the corner of the integrated circuit, which can increase the effective utilization rate of the area of the silicon chip of the integrated circuit.
本发明是通过下述技术方案来解决上述技术问题的:一种集成电路角落的使用方法,共特征在于,其包括以下步骤:The present invention solves the above-mentioned technical problems through the following technical solutions: a method for using an integrated circuit corner, which is characterized in that it includes the following steps:
步骤一,角落的数量为四个,四个角落内所放置的电路不能完全一样,角落放置电源和地的环线,两个互为垂直方向的电源、地及输入输出端口所对应的电源线和地线使用符合挖槽设计规则的金属连线衔接;Step 1. The number of corners is four, and the circuits placed in the four corners cannot be exactly the same. The power and ground loops are placed in the corners, and the power lines and power lines corresponding to the two perpendicular power, ground, and input and output ports are placed in the corners. The ground wire is connected with a metal connection wire that conforms to the design rules of the trench;
步骤二,在步骤一电源线的金属线区域的正下方放置用于防止闩锁效应的N-We11及N-tap,打上足够多的欧姆接触孔,并通过金属及过孔连至金属的电源线;Step 2, place N-We11 and N-tap to prevent latch-up effect directly under the metal line area of the power line in step 1, make enough ohmic contact holes, and connect to the metal power supply through metal and via holes Wire;
步骤三,在一条地线的金属线区域的正下方放置用于防止闩锁效应的P-We11及P-tap,打上足够多的欧姆接触孔,并通过金属及过孔连至金属的地线;Step 3, place P-We11 and P-tap to prevent latch-up effect directly under the metal line area of a ground line, make enough ohmic contact holes, and connect to the metal ground line through metal and via holes ;
步骤四,在符合晶圆代工厂防止闩锁效应设计规则的条件下修改前面步骤一至步骤三;Step 4, modify the previous steps 1 to 3 under the condition of complying with the design rules of the foundry to prevent latch-up effects;
步骤五,按照晶圆代工厂版图图层设计规则绘制符合最小规则的测试版图,将这些待测试的图层绘制的版图放置在集成电路的角落;Step 5, draw a test layout conforming to the minimum rules according to the layout layer design rules of the wafer foundry, and place the layout drawn by these layers to be tested at the corner of the integrated circuit;
步骤六,放置该集成电路信息的标记或者用于集成电路封装时定位的标记;Step 6, placing a mark for the information of the integrated circuit or a mark for positioning when the integrated circuit is packaged;
步骤七,测试晶圆代工厂的某项工艺参数,设计特定的电路并连上金属焊点(PAD),把这个模块放置在集成电路的角落,等待流片回来测试。Step 7: Test a certain process parameter of the wafer foundry, design a specific circuit and connect the metal pad (PAD), place this module in the corner of the integrated circuit, and wait for the tape-out to come back for testing.
本发明的积极进步效果在于:本发明可提升集成电路硅片面积的有效使用率,结构简单,降低成本。The positive and progressive effects of the present invention are: the present invention can increase the effective utilization rate of the integrated circuit silicon chip area, has a simple structure, and reduces costs.
附图说明Description of drawings
图1为本发明集成电路角落的使用方法形成的集成电路结构示意图。FIG. 1 is a schematic diagram of the structure of an integrated circuit formed by using the corner of an integrated circuit according to the present invention.
具体实施方式Detailed ways
下面结合附图给出本发明较佳实施例,以详细说明本发明的技术方案。The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings to describe the technical solution of the present invention in detail.
本发明集成电路角落的使用方法包括以下步骤:The use method of integrated circuit corner of the present invention comprises the following steps:
步骤一,角落(Corner)的数量为四个,四个角落内所放置的电路不能完全一样,角落放置电源和地的环线,两个互为垂直方向的电源、地及输入输出端口所对应的电源线和地线使用符合挖槽设计规则的金属连线衔接;Step 1. The number of corners is four. The circuits placed in the four corners cannot be exactly the same. The power and ground loops are placed in the corners. The power and ground wires are connected by metal wires conforming to the design rules of trenching;
步骤二,在步骤一电源线的金属线区域的正下方放置用于防止闩锁效应的N-We11及N-tap,打上足够多的欧姆接触孔,并通过金属及过孔连至金属的电源线;Step 2, place N-We11 and N-tap to prevent latch-up effect directly under the metal line area of the power line in step 1, make enough ohmic contact holes, and connect to the metal power supply through metal and via holes Wire;
步骤三,在一条地线的金属线区域的正下方放置用于防止闩锁效应的P-We11及P-tap,打上足够多的欧姆接触孔,并通过金属及过孔连至金属的地线;Step 3, place P-We11 and P-tap to prevent latch-up effect directly under the metal line area of a ground line, make enough ohmic contact holes, and connect to the metal ground line through metal and via holes ;
步骤四,在符合晶圆代工厂防止闩锁效应(Latch-Up)设计规则的条件下修改前面步骤一至步骤三,目的是为了使被修改的角落可以放置如下电路:Step 4. Modify the previous steps 1 to 3 under the condition of complying with the design rules of the wafer foundry to prevent the latch-up effect (Latch-Up), so that the modified corner can place the following circuit:
(1)电源启动电略〔Power On Reset);(1) Power start circuit [Power On Reset];
(2)晶体震荡电路(Crysta1);(2) Crystal oscillation circuit (Crysta1);
(3)带隙基准电路(Band-gap);(3) Band-gap reference circuit (Band-gap);
(4)运算放大器电路(Operational Amplifier);(4) Operational Amplifier circuit (Operational Amplifier);
(5)有特别需要的晶体管、电阻、电容等电路元器件;(5) Transistors, resistors, capacitors and other circuit components with special needs;
(6)测试用电路或者晶体管、电阻、电容等电路元器件;(6) Test circuits or circuit components such as transistors, resistors, and capacitors;
(7)与需要测试电路相连接的金属焊点(PAD)。(7) The metal pad (PAD) connected to the circuit to be tested.
本条目所列举的电路或者元器件不是本方法要求必须放置的,而是根据角落可使用面积的大小做版图的修改和调整来综合考虑放置它们的可行性来定夺的;如果有些元器件比较敏感,对周围环境的要求比较苛刻,放置角落可能会影响其电路本身的性能,这种电路就不要放置在角落了;The circuits or components listed in this item are not required to be placed by this method, but are determined by modifying and adjusting the layout according to the size of the usable area of the corner to comprehensively consider the feasibility of placing them; if some components are more sensitive , the requirements for the surrounding environment are relatively strict, and placing the corner may affect the performance of the circuit itself, so this kind of circuit should not be placed in the corner;
步骤五,按照晶圆代工厂版图图层设计规则绘制符合最小规则的测试版图(主要是测试单图层的最细线宽,最窄间隔),将这些待测试的图层绘制的版图放置在集成电路的角落;Step 5: Draw a test layout that meets the minimum rules (mainly testing the thinnest line width and narrowest interval of a single layer) according to the layout layer design rules of the wafer foundry, and place the layout drawn by these layers to be tested on the corners of integrated circuits;
步骤六,放置该集成电路信息的标记(LOGO)或者用于集成电路封装时定位的标记;Step 6, placing the mark (LOGO) of the integrated circuit information or the mark used for positioning when the integrated circuit is packaged;
步骤七,测试晶圆代工厂的某项工艺参数,设计特定的电路(目的是为了检测该工厂的工艺参数)并连上金属焊点(PAD),把这个模块放置在集成电路的角落,等待流片回来测试。Step 7: Test a certain process parameter of the wafer foundry, design a specific circuit (in order to detect the process parameter of the factory) and connect the metal pad (PAD), place this module on the corner of the integrated circuit, and wait Tape out and test.
为避免芯片封装时没有识别标记,利用四个角落(Corner)时,四个角落(Corner)内所放置的电路不能完全一样。In order to avoid that there is no identification mark when the chip is packaged, when using the four corners (Corner), the circuits placed in the four corners (Corner) cannot be exactly the same.
本发明集成电路角落的使用方法形成的结构如图1所示,其中LOGO表示标记,Module表示模块,VSS-Ring表示VSS环,VDD-Ring表示VDD环。在角落放置晶体管、电阻、电容等电路设计、防静电、抗闩锁或测试所用的元器件;或者把实现特定功能的小模块单元从Core区域搬过来放置在集成电路的角落(Corner)区域里;设计特定的电路来测试晶圆代工厂某项工艺参数的电路,把它放置在集成电路的角落(Corner)区域里以便流片回来测试。设计想要测试的图层版图放置在集成电路的角落(Corner)区域里以便流片回来显微镜下观看、测试、评估对应的图层。The structure formed by the use method of the integrated circuit corner of the present invention is shown in Figure 1, wherein LOGO represents a mark, Module represents a module, VSS-Ring represents a VSS ring, and VDD-Ring represents a VDD ring. Place transistors, resistors, capacitors and other circuit design, anti-static, anti-latch or test components in the corner; or move small module units that implement specific functions from the Core area and place them in the corner (Corner) area of the integrated circuit ; Design a specific circuit to test the circuit of a certain process parameter in the foundry, and place it in the corner (Corner) area of the integrated circuit for tape-out testing. Design the layout of the layer to be tested and place it in the corner area of the integrated circuit so that the corresponding layer can be viewed, tested, and evaluated under a microscope after tape-out.
以上所述的具体实施例,对本发明的解决的技术问题、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The specific embodiments described above have further described the technical problems, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit In the present invention, any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
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Address after: 230000 building 11, alumni enterprise innovation park, Luyang University of science and technology, northwest of the intersection of Tianshui road and Taihe Road, Luyang District, Hefei City, Anhui Province Patentee after: Hengshuo semiconductor (Hefei) Co.,Ltd. Address before: 230000 6 / F, building 2, gongtou Xinglu science and Technology Industrial Park, Luyang District, Hefei City, Anhui Province Patentee before: ZBIT SEMICONDUCTOR Ltd. |
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CP03 | Change of name, title or address |