CN106567039B - A kind of MoS2/Ag/MoS2Semiconductor film material and preparation method thereof - Google Patents

Abstract

The invention discloses a MoS ₂ /Ag/MoS ₂ semiconductor thin film material and a preparation method thereof. The thin film has a layered structure, and comprises a top MoS ₂ thin film layer, an Ag metal layer, a bottom MoS ₂ thin film layer and the present invention in order from top to bottom. Insulating Si substrate. Its preparation method mainly adopts DC magnetron sputtering technology, and uses high-energy electrons to bombard the surfaces of different targets in turn: first, a MoS ₂ target is used, and a bottom layer of MoS ₂ film is deposited on the surface of the Si substrate; then metal Ag is used. A target material is used to deposit an Ag metal layer on the bottom MoS ₂ thin film layer; finally, a MoS ₂ target material is used to deposit a top MoS ₂ thin film layer on the Ag metal layer. Compared with the pure MoS ₂ thin film product, the resistivity of the MoS ₂ /Ag/MoS ₂ semiconductor thin film of the present invention is reduced by more than 4 orders of magnitude. The invention has the advantages of simple process, simple parameter control, high yield, good product quality stability and reliability, and low manufacturing cost, which is suitable for industrialized production.

Description

A kind of MoS2/Ag/MoS2 semiconductor thin film material and preparation method thereof

technical field

The invention relates to a semiconductor material and a preparation method thereof, in particular to a MoS ₂ /Ag/MoS ₂ semiconductor thin film material and a preparation method thereof.

Background technique

Molybdenum disulfide itself is non-conductive, but has diamagnetic properties, and can be used as a linear photoconductor and a semiconductor showing P-type or N-type conductivity, and has the functions of rectification and energy conversion.

Since the molybdenum disulfide thin film material has a typical layered structure, the layers are tightly bound together by covalent bonds, and each Mo atom is surrounded by six S atoms, in the shape of a triangular prism; Combined with van der Waals forces, it slides off easily.

The above-mentioned structural characteristics of molybdenum disulfide lead to its very high resistivity and poor carrier transport performance, which seriously hinders its application in the field of semiconductors and devices.

In order to reduce the resistivity of the MoS ₂ thin film material and improve its electrical conductivity, so as to satisfy the use of the MoS ₂ thin film material in the field of semiconductor devices. In the prior art, a relatively successful approach is to use metal elements to dope MoS ₂ to modify the MoS ₂ material. E.g:

Wu Chen et al. ("Micro-Nano Electronics Technology", 2014, 08) disclosed the research results of "Influence of Ag doping _on the properties of MoS2 thin films", and prepared Ag-doped on p-type conductive Si substrates by chemical vapor deposition method. MoS ₂ thin film material;

Chinese patent ZL201510558994.3 discloses a Pd-MoS ₂ heterojunction photovoltaic solar cell device and a preparation method thereof. The technical means used is to perform MoS ₂ doping treatment with Pd metal element.

However, this method of using metal elements to dope MoS ₂ to modify MoS ₂ materials is based on the principle that metal elements are introduced into the lattice of molybdenum disulfide to replace the original molybdenum element in molybdenum disulfide. . Due to the differences in atomic radius, ability to gain or lose electrons, etc., this doping technology will inevitably form a large number of defects in molybdenum disulfide, resulting in instability of the material structure and performance of the product.

In other words, using the technical means of doping to modify the MoS ₂ thin film material, the consistency and stability of the product performance are relatively poor, and the control of product quality is difficult.

More importantly, for the technical field of semiconductor devices, such doped and modified MoS ₂ thin film materials still have high resistivity and unsatisfactory electrical conductivity.

SUMMARY OF THE INVENTION

One of the objectives of the present invention is to provide a MoS ₂ /Ag/MoS ₂ semiconductor thin film material with good electrical conductivity.

The technical problem that the present invention needs to solve in order to achieve the above-mentioned purpose is the technical problem of how to effectively reduce the resistivity of the MoS ₂ thin film material.

The technical solution adopted by the present invention to achieve the above object is a MoS ₂ /Ag/MoS ₂ semiconductor thin film material, which is characterized in that it is a layered structure, and sequentially includes a top MoS ₂ thin film layer and an Ag metal layer from top to bottom. , the underlying MoS ₂ thin film layer and the Si substrate; wherein:

The Si substrate is an intrinsic insulating non-conductive single crystal material, one side is polished, and the polished surface is the upper surface;

The MoS ₂ thin film layer has a purity of 99.9%;

The Ag metal layer has a purity of 99.99%;

The thicknesses of the top MoS ₂ thin film layer, the Ag metal layer, and the bottom MoS ₂ thin film layer are respectively 50 nm, 3-10 nm and 50 nm.

The technical effect directly brought about by the above technical solutions is that a thin Ag metal layer is inserted between the top MoS ₂ thin film layer and the bottom MoS ₂ thin film layer, which greatly reduces the resistivity value of the MoS ₂ thin film material and significantly improves the MoS ₂ The conductive properties of the thin film material, and the formed MoS ₂ /Ag/MoS ₂ thin film has a stable structure and strong performance repeatability.

The test results show that the MoS ₂ /Ag/MoS ₂ thin film material prepared by the above technical scheme has an electron carrier concentration and electron mobility of 8.3×10 ²² cm ^-3 and 8.5cm ² V ^-1 s ^-1 , respectively. .

These performance parameters are comparable to those of the pure MoS ₂ thin film material (the electron carrier concentration, electron mobility and resistivity values of the pure MoS ₂ thin film material are 2.1×10 ¹⁷ cm ^-3 and 0.1 cm ² V ^-1 s ^-1 , respectively) In comparison, they are improved by at least 5 orders of magnitude and 1 order of magnitude, respectively.

In particular, the MoS ₂ /Ag/MoS ₂ thin film material prepared by the above technical solution has a resistivity value of 5.7×10 ^-2 Ωcm, which is at least 5.7×10 -2 Ωcm than that of a single MoS ₂ thin film material (1.1×10 ³ Ωcm) 4 orders of magnitude lower.

In a nutshell, the present invention subtly changes the single MoS ₂ thin film layer into a "sandwich layer" structure by using the simple technical means of inserting a layer of Ag metal thin layer between the upper and lower MoS ₂ thin film layers. Using the electron injection effect of the free electrons in the inserted Ag metal thin layer to the MoS ₂ thin film layer, the electron carrier concentration and electron mobility in the thin film material are improved, and the resistivity value of the MoS ₂ thin film material can be significantly reduced and improved. The purpose of the conductive properties of MoS ₂ thin film materials.

In order to better understand the above technical solutions, the principle is now described in detail:

1. The technical effect of Ag metal intercalation on the performance of MoS ₂ thin film material has three aspects:

(1) A large number of free electrons in the Ag metal intercalation enter the top MoS ₂ thin film layer and the bottom MoS ₂ thin film layer respectively through the injection effect, which improves the electron carrier concentration and electron mobility in the upper and lower MoS ₂ thin film layers, respectively;

(2) By increasing the electron concentration and electron mobility in the upper and lower layers of the MoS ₂ thin film material, the resistivity of the MoS ₂ thin film material is significantly reduced, and the electrical conductivity of the MoS ₂ thin film material is greatly enhanced;

(3) The continuity feature of the intermediate Ag metal intercalation effectively enhances the stability of the film structure and reduces the number of internal defects in the film, thereby improving the stability and repeatability of the film material properties.

2. In the above technical solution, the electronic work function of the Ag metal layer is 4.2eV, which is less than the work function value of the MoS ₂ thin film material, which is 4.5 eV, thereby ensuring that electrons can be injected from the Ag metal layer into the MoS ₂ thin film layer;

3. In the above technical solution, the Ag metal layer is located between the two layers of MoS ₂ material, which is beneficial for electrons to enter the upper and lower MoS ₂ thin film layers respectively through the injection effect, and improves the uniformity of carrier distribution inside the entire thin film material;

4. In the above technical solution, the thickness of the Ag metal layer is ultra-thin, 3-10 nm, which improves the uniformity and continuity of the Ag metal layer on the one hand; Instead of going through the MoS ₂ thin film layer; at the same time, the Ag metal layer can provide a lot of free electrons for the upper and lower MoS ₂ thin films.

Experiments have proved that the MoS ₂ /Ag/MoS ₂ thin film material of the above technical scheme has the advantages of high electron concentration, high electron mobility, small resistivity value, stable structure and performance, and the like.

Preferably, the underlying MoS ₂ thin film layer is deposited on the upper surface of the Si by a DC magnetron sputtering method;

The Ag metal layer is deposited on the MoS ₂ thin film layer by a DC magnetron sputtering method;

The top MoS ₂ thin film layer is deposited on the Ag metal layer by DC magnetron sputtering.

The technical effects directly brought about by the preferred technical solution are that the preparation method is simple, the technological process is easy to control, and the product quality stability and consistency are better.

The second purpose of the present invention is to provide a preparation method of the above-mentioned MoS ₂ /Ag/MoS ₂ semiconductor thin film material, which has a simple preparation process, an easy-to-control process, a high yield, and an environmentally friendly process, which is suitable for industrial production.

The technical solution adopted by the present invention to achieve the above object is, a preparation method of the above-mentioned MoS ₂ /Ag/MoS ₂ thin film material, characterized in that it comprises the following steps:

The first step, the surface cleaning step of the silicon substrate

Select an intrinsically insulating non-conductive Si single crystal substrate, and ultrasonically clean it in alcohol, acetone and deionized water for 180s in turn;

Remove and blow dry with dry nitrogen;

The second step, the surface deposition step of the underlying MoS ₂ thin film layer

Put the cleaned Si single crystal substrate into a tray, put it into a vacuum chamber, and pump the vacuum chamber to a high vacuum. In an argon atmosphere, adjust the temperature of the Si single crystal substrate to the first temperature, and the The gas pressure was adjusted to the first pressure, and the DC magnetron sputtering technology was used to bombard the MoS ₂ ceramic target with ionized ions under the condition of constant 30W sputtering power. On the upper surface of the Si substrate, deposition was One MoS ₂ thin film layer;

The third step, Ag metal layer surface deposition step

Change the tray containing the sample to just above the Ag metal target;

The temperature of the Si single crystal substrate was adjusted to the second temperature, and the Ar gas pressure was adjusted to the second pressure. The DC magnetron sputtering technology was used to bombard the Ag metal target with ionized ions under a constant sputtering power of 30W. , on the surface of the above-mentioned bottom MoS ₂ thin film layer, a layer of Ag metal layer is deposited;

The fourth step, the surface deposition step of the top MoS ₂ thin film layer

Change the tray containing the sample to just above the MoS ₂ ceramic target;

The temperature of the Si single crystal substrate was adjusted to the third temperature, the Ar gas pressure was adjusted to the third pressure, and the DC magnetron sputtering technology was used to bombard the MoS ₂ ceramic target with ionized ions under a constant sputtering power of 30W. A layer of MoS ₂ thin film layer is deposited on the surface of the above-mentioned Ag metal layer.

The technical effect directly brought about by the above technical solution is that the preparation process is simple, the yield is high, and it is suitable for industrial production, and the above preparation method does not use toxic and harmful raw materials, does not generate toxic and harmful waste or discharges waste gas, and the entire process flow is green and environmentally friendly. Pollution;

The quality of the product prepared by the above technical solution is uniform and stable, the film layers are firmly attached, the thickness is uniform and stable, and it is easy to control.

Preferably, the purity of the argon gas is above 99.999%; the high-purity nitrogen gas refers to dry nitrogen gas with a purity of above 99.95%; the MoS ₂ ceramic target material has a purity of 99.9%; the Ag metal target material, Its purity is 99.99%; the target-to-base distance of the MoS ₂ target material and the target-to-base distance of the Ag target material are both 50 mm.

The technical effect directly brought about by the preferred technical solution is that the distance can not only satisfy the sufficient collision of the ions with the working gas to reduce the kinetic energy during the movement, but also ensure that the ions have sufficient adhesion during the film formation process.

Further preferably, the first temperature is 20-400°C, and the first pressure is 1-10Pa;

The second temperature is 20-30°C, and the second pressure is 1-5Pa;

The third temperature is 20-400° C., and the third pressure is 1-10 Pa.

The technical effect directly brought about by the preferred technical solution is that it can not only ensure the obtaining of good crystal quality of the molybdenum disulfide thin film and the silver metal film layer, but also meet the sufficient adhesion required in the ion film formation process, and also The film thickness can be easily controlled.

To sum up, the present invention has the following beneficial effects with respect to the prior art:

1. The MoS ₂ /Ag/MoS ₂ semiconductor thin film material of the present invention has a very significant low resistivity (at room temperature, the electron carrier concentration, electron mobility and resistivity values are 8.3×10 ²² cm ^-3 , 8.5cm ² V ^-1 s ^-1 and 5.7×10 ^-2 Ωcm. Compared with a single pure MoS ₂ thin film material, the carrier concentration is increased by at least 5 orders of magnitude, and the electron mobility is increased by at least 1 order of magnitude, while Resistivity values are reduced by at least 4 orders of magnitude).

2. The preparation method of the MoS ₂ /Ag/MoS ₂ semiconductor thin film material of the present invention has the advantages of simple process, simple parameter control, high yield, low manufacturing cost, good product quality stability and reliability, and is suitable for industrial production.

Description of drawings

1 is a schematic structural diagram of the MoS ₂ /Ag/MoS ₂ semiconductor thin film material of the present invention;

Fig. 2 is the Raman spectrum diagram of MoS ₂ /Ag/MoS ₂ semiconductor thin film material prepared in Example 1;

3 is a graph showing the variation law of the electron carrier concentration and the mobility value of the MoS ₂ /Ag/MoS ₂ semiconductor thin film material of the present invention with the thickness of the Ag layer, respectively;

FIG. 4 is a graph showing the variation law of the resistivity value of the MoS ₂ /Ag/MoS ₂ semiconductor thin film material of the present invention with the thickness of the Ag layer.

Detailed ways

The present invention will be described in detail below with reference to the embodiments and the accompanying drawings.

Example 1

The preparation method is as follows:

The first step, the surface cleaning step of the silicon substrate

Select an intrinsically insulating non-conductive Si single crystal substrate, and ultrasonically clean it in alcohol, acetone and deionized water for 180s in turn;

Remove and blow dry with dry nitrogen;

The second step, the surface deposition step of the underlying MoS ₂ thin film layer

Put the cleaned Si single crystal substrate into the tray, put it into a vacuum chamber, and pump the vacuum chamber to a high vacuum, and adjust the temperature of the Si single crystal substrate to the first temperature of 200°C in an argon atmosphere. , the argon gas pressure was adjusted to the first pressure of 3Pa, and the DC magnetron sputtering technology was used. Under the condition of constant 30W sputtering power, the ionized ions _were used to bombard the MoS2 ceramic target, and the upper surface of the Si substrate was bombarded by the ionized ions. , deposit a MoS ₂ thin film layer with a thickness of 50 nm;

The third step, Ag metal layer surface deposition step

Change the tray containing the sample to just above the Ag metal target;

The temperature of the Si single crystal substrate was adjusted to the second temperature of 20-25°C, the Ar gas pressure was adjusted to the second pressure of 5Pa, and the DC magnetron sputtering technology was used. Under the constant sputtering power of 30W, the ionized ions were used. Bombard the Ag metal target, and deposit another Ag metal layer with a thickness of 10nm on the surface of the above-mentioned bottom MoS ₂ thin film layer;

The fourth step, the surface deposition step of the top MoS ₂ thin film layer

Change the tray containing the sample to just above the MoS ₂ ceramic target;

The temperature of the Si single crystal substrate was adjusted to the third temperature of 200°C, the Ar pressure was adjusted to the third pressure of 3Pa, and the DC magnetron sputtering technology was used to bombard MoS with ionized ions under a constant sputtering power of 30W. ₂ The ceramic target is obtained by depositing a MoS ₂ thin film layer with a thickness of 50 nm on the surface of the above-mentioned Ag metal layer.

Product performance test results:

After testing, at room temperature (20-25℃), the electron carrier concentration, electron mobility and resistivity of the prepared MoS ₂ /Ag/MoS ₂ semiconductor thin film material were 8.3×10 ²² cm ^{- 3} , 8.5cm ² V ^-1 s ^-1 and 5.7×10 ^-2 Ωcm.

Description: The electron carrier concentration, electron mobility and resistivity of pure MoS ₂ thin film material are 2.1×10 ¹⁷ cm ^-3 , 0.1 cm ² V ^-1 s ^-1 and 1.1×10 ³ Ωcm Example: the detection results of Example 2).

Example 2

Note: This example is a comparative example, and the target product is pure MoS ₂ thin film material without intermediate Ag intercalation.

The preparation method is as follows:

The first step, the surface cleaning step of the silicon substrate

Select an intrinsically insulating non-conductive Si single crystal substrate, and ultrasonically clean it in alcohol, acetone and deionized water for 180s in turn;

Remove and blow dry with dry nitrogen;

The second step, the surface deposition step of the underlying MoS ₂ thin film layer

Put the cleaned Si single crystal substrate into the tray, put it into a vacuum chamber, and pump the vacuum chamber to a high vacuum, and adjust the temperature of the Si single crystal substrate to the first temperature of 200°C in an argon atmosphere. , the argon gas pressure was adjusted to the first pressure of 3Pa, and the DC magnetron sputtering technology was used. Under the condition of constant 30W sputtering power, the ionized ions _were used to bombard the MoS2 ceramic target, and the upper surface of the Si substrate was bombarded by the ionized ions. , deposit a MoS ₂ thin film layer with a thickness of 100 nm;

Product performance test results:

After testing, at room temperature (20-25℃), the electron carrier concentration, electron mobility and resistivity of the prepared MoS ₂ thin film material are 2.1×10 ¹⁷ cm ^-3 and 0.1 cm ² V, respectively. ^-1 s ^-1 and 1.1×10 ³ Ωcm.

Example 3

Only in the third step, the thickness of the Ag intercalation layer was adjusted to 3 nm by adjusting the sputtering time;

Product performance test results:

After testing, at room temperature (20-25℃), the electron carrier concentration, electron mobility and resistivity of the prepared MoS ₂ /Ag/MoS ₂ thin film material were 1.8×10 ²⁰ cm ^-3 , 1.2cm ² V ^-1 s ^-1 and 9.8Ωcm.

Example 4

Only in the third step, the thickness of the Ag intermediate intercalation layer was adjusted to 8 nm by adjusting the sputtering time; the rest were the same as in Example 1.

Product performance test results:

After testing, at room temperature (20-25℃), the electron carrier concentration, electron mobility and resistivity of the prepared MoS ₂ /Ag/MoS ₂ semiconductor thin film material are 8.8×10 ²¹ cm ^{- 3} , 2.3cm ² V ^-1 s ^-1 and 1.1Ωcm.

Example 5

Only in the third step, the thickness of the Ag intermediate intercalation layer was adjusted to 10 nm by adjusting the sputtering time; the rest were the same as in Example 1.

Product performance test results:

After testing, at room temperature (20-25℃), the electron carrier concentration, electron mobility and resistivity of the prepared MoS ₂ /Ag/MoS ₂ semiconductor thin film material were 6.0×10 ²² cm ^{- 3} , 5.7cm ² V ^-1 s ^-1 and 0.12Ωcm.

In order to better understand the technical characteristics of the present invention, the performance testing method and testing result of the product prepared by the present invention will be described in detail below with reference to the accompanying drawings.

FIG. 1 is a schematic structural diagram of the MoS ₂ /Ag/MoS ₂ semiconductor thin film material of the present invention.

As shown in FIG. 1 , the MoS ₂ /Ag/MoS ₂ semiconductor thin film material of the present invention has a layered structure, and from top to bottom sequentially includes a top MoS ₂ thin film layer, an Ag metal layer, a bottom MoS ₂ thin film layer and a Si base layer. piece; of which:

The above-mentioned Si substrate is an intrinsically insulating non-conductive single crystal material, one side is polished, and the polished surface is the upper surface;

The above MoS ₂ thin film layer, its purity is 99.9%;

The above-mentioned Ag metal layer has a purity of 99.99%;

The thicknesses of the top MoS ₂ thin film layer, the Ag metal layer and the bottom MoS ₂ thin film layer are respectively 50nm, 3-10nm and 50nm;

The above-mentioned bottom layer MoS ₂ thin film layer is deposited on the above-mentioned Si upper surface by DC magnetron sputtering method;

The above-mentioned Ag metal layer is deposited on the above-mentioned MoS ₂ thin film layer by DC magnetron sputtering method;

The above-mentioned top MoS ₂ thin film layer is deposited on the above-mentioned Ag metal layer by DC magnetron sputtering method.

FIG. 2 is a Raman spectrum analysis diagram of the MoS ₂ /Ag/MoS ₂ semiconductor thin film material prepared in Example 1. FIG.

As shown in Fig. 2, 382 cm ^-1 and 407 cm ^-1 are the typical in-plane vibration modes (E ¹ _2g ) and out-of-plane vibration modes (A _1g ) of MoS ₂ thin films, respectively. It is indicated that the material of the prepared film is MoS ₂ .

FIG. 3 is a graph showing the changing law of the electron carrier concentration and mobility value of the MoS ₂ /Ag/MoS ₂ semiconductor thin film material of the present invention as a function of the thickness of the Ag layer.

It can be seen from Figure 3 that the electron carrier concentration and mobility values of the MoS ₂ /Ag/MoS ₂ thin film material gradually increase with the increase of the Ag intercalation thickness. It can be seen that with the increase of thickness, the uniformity and continuity of the Ag intercalation layer is enhanced, which is due to the enhancement of the number and effect of electrons injected into the _MoS2 film from the inside of the Ag layer, which leads to the obvious occurrence of carrier concentration and electron mobility in the whole film. improve.

FIG. 4 is a graph showing the variation law of the resistivity value of the MoS ₂ /Ag/MoS ₂ semiconductor thin film material of the present invention with the thickness of the Ag layer.

As shown in Fig. ₄ , the electron carrier concentration, electron mobility and resistivity values of pure MoS2 thin film material without Ag metal intercalation (corresponding to the thickness of 0 in the figure) are 2.1 × 10 ¹⁷ cm ^{− 3} , 0.1 cm ² V ^-1 s ^-1 and 1.1×10 ³ Ωcm.

It can be seen from Figure 4 that the resistivity value of the MoS ₂ /Ag/MoS ₂ thin film material gradually decreases with the increase of the Ag intercalation thickness.

At room temperature (20-25°C), the electron carrier concentration, electron mobility and resistivity of the prepared MoS ₂ /Ag/MoS ₂ semiconductor thin film material with 10 nm Ag metal intercalation were 8.3× 10 ²² cm ^-3 , 8.5 cm ² V ^-1 s ^-1 and 5.7×10 ^-2 Ωcm.

From the data comparison, it can be seen that the increase of the carrier concentration is more than 5 orders of magnitude, the increase of the electron mobility is more than 1 order of magnitude, and the decrease of the resistivity value is more than 4 orders of magnitude. The improvement of the electrical conductivity is huge and the effect is very significant.

Claims (1)

1. a kind of MoS₂/Ag/MoS₂The preparation method of semiconductor film material, which comprises the following steps:

The first step, silicon substrate surface cleaning step

The intrinsic non-conductive type Si monocrystal chip of insulation is chosen, is successively cleaned by ultrasonic 180s in alcohol, acetone and deionized water；

It takes out and is dried up with drying nitrogen；

Second step, bottom MoS₂Thin-film surface deposition step

Si monocrystal chip substrate after cleaning is packed into pallet, is put into vacuum chamber, and vacuum chamber is taken out as high vacuum, in argon gas ring Under border, the temperature of Si monocrystal chip is adjusted to the first temperature, ar pressure is adjusted to first pressure, using magnetically controlled DC sputtering skill Art utilizes the ion bombardment MoS ionized out under the conditions of constant 30W sputtering power₂Ceramic target, in the Si substrate On upper surface, one layer of MoS is deposited₂Film layer；

Third step, Ag layer on surface of metal deposition step

By the pallet-changing equipped with sample to the surface of Ag metal targets；

The temperature of Si monocrystal chip is adjusted to second temperature, Ar air pressure is adjusted to second pressure, using magnetically controlled DC sputtering technology, Under the conditions of constant 30W sputtering power, using the ion bombardment Ag metal targets ionized out, in above-mentioned bottom MoS₂Film layer On surface, redeposited one layer of Ag metal layer；

4th step, top layer MoS₂Thin-film surface deposition step

Pallet equipped with sample is replaced again to MoS₂The surface of ceramic target；

The temperature of Si monocrystal chip is adjusted to third temperature, Ar air pressure is adjusted to third pressure, using magnetically controlled DC sputtering technology, Under the conditions of constant 30W sputtering power, the ion bombardment MoS ionized out is utilized₂Ceramic target, on the surface of above-mentioned Ag metal layer On, one layer of MoS of redeposition₂Film layer to get；

In above-mentioned steps, the purity of the argon gas is 99.999% or more；

The nitrogen refers to that purity is 99.95% or more drying nitrogen；

The MoS₂Ceramic target, purity 99.9%；

The Ag metal targets, purity 99.99%；

The MoS₂The target-substrate distance of the target-substrate distance of target and the Ag target is 50mm；

First temperature is 20-400 DEG C, and the first pressure is 1-10Pa；

The second temperature is 20-30 DEG C, and the second pressure is 1-5Pa；

The third temperature is 20-400 DEG C, and the third pressure is 1-10Pa.