CN106558564B - Improved structure of copper metal on back of semiconductor element - Google Patents

Abstract

An improved structure of copper metal on the back side of a semiconductor element, wherein the improved structure includes, from top to bottom, an active layer, a substrate, a back metal seed layer, a long-lasting high temperature buffer layer, a back metal layer, and at least one anti-oxidation metal layer, wherein the material of the back metal seed layer includes palladium and phosphorus, the material of the long-lasting high temperature buffer layer is nickel, silver or nickel alloy, and the material of the back metal layer is copper. The structure provided by the present invention can make the semiconductor chip have the characteristic of long-lasting high temperature operation; after passing the long-lasting high temperature test, the metal layer structures on the back side still maintain their structural integrity, and are not prone to voids, peeling or cracks, and are not prone to poor grounding, and effectively enhance the chip's long-lasting high temperature operation characteristics and the chip's reliability.

Description

Improved Structure of Copper Metal on the Backside of Semiconductor Elements

technical field

The present invention relates to an improved structure of copper metal on the back of a semiconductor element, especially a kind of copper as the back metal layer, the back metal seed layer contains palladium (Pd) and phosphorus (P), and a layer is inserted between the two layers The long-lasting high-temperature buffer layer enables the semiconductor element to have an improved structure of long-lasting high-temperature operation characteristics.

Background technique

The manufacturing process of the semiconductor device usually includes a backside metallization process, which is related to the flexural strength, heat dissipation and grounding characteristics of the semiconductor device. Fig. 1 is a schematic diagram of an existing copper metal structure on the back of a semiconductor element, wherein the structure sequentially includes a substrate 101, a diffusion barrier layer 105, a stress relief metal layer 107, a back metal layer 109 and an anti-oxidation layer 111; The diffusion barrier layer 105 is formed under the substrate 101, and the material of the diffusion barrier layer 105 is tantalum nitride (TaN), and its main function is to prevent other metal materials from diffusing into the substrate 101, thereby adversely affecting the components; the stress Elimination of the metal layer 107 is formed under the diffusion barrier layer 105, the material of the stress relief metal layer 107 is gold (Au), the main function is to slow down or eliminate the structural peeling caused by the uneven expansion or contraction of the underlying structure; The material of the back metal layer 109 is copper (Cu), and its thickness needs to be sufficient to support the stress suffered by the substrate 101 during packaging, and also help the components on the substrate 101 to dissipate heat; the material of the anti-oxidation layer 111 is gold (Au), which can prevent the back metal layer 109 from being oxidized.

However, tantalum nitride (TaN) is used as the diffusion barrier layer, gold (Au) is used as the stress relief metal layer, and copper (Cu) is used as the back metal layer. The performance of the operation is not ideal; the heat dissipation and high temperature resistance of semiconductor components are very important issues nowadays. If the high temperature resistance of the components is not ideal, the semiconductor components may be damaged due to overheating, especially when the semiconductor components have backside conductors. When conducting holes, the aspect ratio of the backside guide holes is usually very large. Under high temperature operation, the three-layer structure is more likely to produce voids, cracks, peeling, etc., resulting in poor grounding and damage to the semiconductor element.

In view of this, in order to improve the above-mentioned shortcomings, the present invention proposes an improved structure of the copper metal on the back of the semiconductor element that is resistant to long-term high-temperature operation, which can not only effectively improve the high-temperature-resistant operation characteristics of the semiconductor element, but also reduce the damage of the element due to overheating. chance, and at the same time, it can improve the heat conduction effect of the chip, and reduce the material cost.

Contents of the invention

The main purpose of the present invention is to provide an improved structure of the copper metal on the back of the semiconductor element, which helps to improve the long-lasting high-temperature operation characteristics of the element.

In order to achieve the above purpose, the present invention provides an improved copper metal structure on the back of a semiconductor element, including: an active layer, a substrate, a back metal seed layer, a durable high temperature buffer layer and a back metal layer. The active layer is formed on a front surface of the substrate, and the active layer includes at least one integrated circuit. The back metal seed layer is formed on a back side of the substrate, and the material constituting the back metal seed layer includes palladium and phosphorus. The durable high temperature resistant buffer layer is formed under the back metal seed layer. The back metal layer is formed under the durable high temperature buffer layer, and the material constituting the back metal layer is copper.

In one embodiment, the distribution of palladium contained in the back metal seed layer and the distribution of phosphorus contained in the back metal seed layer at least partially overlap.

In one embodiment, the palladium contained in the back metal seed layer is uniformly distributed in the back metal seed layer, and the phosphorus contained in the back metal seed layer is uniformly distributed in the back metal seed layer.

In one embodiment, the palladium included in the backside metal seed layer is distributed closer to the backside of the substrate, and the phosphorus included in the backside metal seed layer is distributed closer to the durable high temperature buffer layer.

In one embodiment, the metal seed layer on the back side includes a first layer and a second layer, the material constituting the first layer is palladium, and the material constituting the second layer is phosphorus.

In one embodiment, the first layer is formed on the back surface of the substrate, the second layer is formed under the first layer, and the durable high temperature buffer layer is formed under the second layer .

In one embodiment, the material constituting the durable high temperature buffer layer is nickel alloy.

In one embodiment, the material constituting the durable high temperature buffer layer is nickel.

In one embodiment, the material constituting the durable high temperature resistant buffer layer is silver.

In one embodiment, a thickness of the durable high temperature resistant buffer layer is greater than and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than or greater than and less than

In one embodiment, at least one anti-oxidation metal layer is further included, wherein the at least one anti-oxidation metal layer is formed under the back metal layer.

In one embodiment, the material constituting the at least one anti-oxidation metal layer includes one selected from the following group: nickel, gold, palladium, vanadium, nickel-gold alloy, nickel-palladium alloy, palladium-gold alloy, nickel alloy, and nickel-vanadium alloy.

In one embodiment, at least one guide hole is further included, wherein the at least one guide hole is formed on the back surface of the substrate, and an inner surface of the at least one guide hole is covered by the back metal seed layer.

In one embodiment, a thickness of the back metal seed layer is greater than and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than or greater than and less than

In order to further understand the present invention, preferred embodiments are given below, and with reference to the drawings and figure numbers, the specific components of the present invention and the effects achieved are described in detail as follows.

Description of drawings

FIG. 1 is a schematic cross-sectional structure diagram of back copper metallization in the prior art.

FIG. 2A is a schematic cross-sectional structure diagram of a specific embodiment of an improved copper metal structure on the backside of a semiconductor element before the backside copper metallization of the present invention.

FIG. 2B is a schematic cross-sectional structure diagram of a specific embodiment of the improved structure of the copper metal on the back side of the semiconductor device according to the present invention.

FIG. 2C is a cross-sectional schematic view of a street-like groove formed on the back metal layer of a specific embodiment of the improved copper metal structure on the back of the semiconductor element of the present invention.

FIG. 2D is a schematic cross-sectional structure diagram of a specific embodiment of the improved structure of the copper metal on the back of the semiconductor device according to the present invention after at least one anti-oxidation metal layer is formed.

FIG. 2E is a schematic cross-sectional structure diagram of another specific embodiment of the improved structure of the copper metal on the back of the semiconductor device according to the present invention.

FIG. 2F is a cross-sectional schematic diagram of street-shaped grooves formed on the back metal layer of another embodiment of the improved copper metal structure on the back of the semiconductor device according to the present invention.

FIG. 2G is a schematic cross-sectional structure diagram of another embodiment of the improved structure of the copper metal on the back of the semiconductor device according to the present invention after at least one anti-oxidation metal layer is formed.

FIG. 2H is a partially enlarged view of FIG. 2B .

Figure 3A shows the improved structure of the copper metal on the back of the semiconductor element of the present invention after a durable high-temperature test, and then an energy-dispersive X-ray spectrometer (EDS, Energy-Dispersive X-Ray Spectroscope) is used to analyze the cc' section line in Figure 2H The analysis results of the structure.

Figure 3B partially shows the test results of Figure 3A.

Description of reference signs: 101-substrate; 105-diffusion barrier layer; 107-stress relief metal layer; 109-back metal layer; 111-anti-oxidation layer; 201-substrate, 203-active layer; 205-back metal seed layer ; 207-durable high temperature resistant buffer layer; 209-back metal layer; 211-oxidation-resistant metal layer; 213-guide hole; 215-groove; 11-first layer;

Detailed ways

FIG. 2A is a schematic cross-sectional structure diagram of a specific embodiment of the improved structure of copper metal on the back of the semiconductor device before the back copper metallization of the present invention. It includes a substrate 201 , an active layer 203 and at least one guide hole 213 . The substrate 201 is usually made of semiconductor materials such as gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN) or silicon carbide (SiC). An active layer 203 is disposed on the front side of the substrate 201, and the active layer 203 includes at least one integrated circuit. Since the integrated circuit in the active layer 203 needs a grounding point, the required number of backside vias 213 will be made by etching technology on the back side of the substrate 201, through which the integrated circuit in the active layer 203 can The ground of the is connected to the ground plane of the remote configuration.

FIG. 2B is a schematic cross-sectional structure diagram of a specific embodiment of the improved structure of the copper metal on the back of the semiconductor device according to the present invention. Its main structure is substantially the same as the embodiment shown in Fig. 2A, except that a back metal seed layer 205 is formed on a back side of the substrate 201, a durable high temperature buffer layer 207 is formed under the back metal seed layer 205 and a The back metal layer 209 is formed under the durable high temperature resistant buffer layer 207 . The backside metal seed layer 205 covers the backside of the substrate 201 and the inner surface of the via hole 213 . Materials constituting the back metal seed layer 205 include palladium and phosphorus. The preferred material for forming the durable high temperature resistant buffer layer 207 is nickel, nickel alloy or silver. The material constituting the back metal layer 209 is copper.

In one embodiment, the distribution of palladium contained in the back metal seed layer 205 and the distribution of phosphorus contained in the back metal seed layer 205 at least partially overlap. In another embodiment, the palladium and phosphorus contained in the back metal seed layer 205 are mixed together. In yet another embodiment, the palladium and phosphorus contained in the back metal seed layer 205 are partially mixed together. In yet another embodiment, the palladium and phosphorus contained in the back metal seed layer 205 are uniformly mixed together, wherein the palladium contained in the back metal seed layer 205 is evenly distributed in the back metal seed layer 205, and contained in the back surface The phosphorus in the metal seed layer 205 is uniformly distributed in the back metal seed layer 205 . In another embodiment, part of the palladium and phosphorous contained in the back metal seed layer 205 are uniformly mixed together.

In another embodiment, the palladium contained in the back metal seed layer 205 is distributed closer to the back of the substrate 201 , and the phosphorus contained in the back metal seed layer 205 is distributed closer to the durable high temperature resistant buffer layer 207 .

The back metal seed layer 205 includes palladium and phosphorus, which can be used as a diffusion barrier to prevent the copper metal of the back metal layer 209 from diffusing into the substrate 201 . Using palladium as part of the material of the back metal seed layer 205 can also improve the adhesion to the substrate 201 . In addition, using phosphorus as part of the material of the back metal seed layer 205 can further improve the effect of preventing the copper metal of the back metal layer 209 from diffusing into the substrate 201 .

FIG. 2C is a cross-sectional schematic diagram of a street-like groove formed in the back metal layer of a specific embodiment of the improved copper metal structure on the back of the semiconductor element of the present invention. Its main structure is substantially the same as the embodiment shown in FIG. 2B , except that a street-shaped groove 215 is formed on the back metal layer 209 . To form the structure of the street-shaped groove 215, at first define at least one street-shaped groove 215 area on the back metal layer 209 by exposure and development technology, and then define the back metal layer in the area of at least one street-shaped groove 215 209 performs etching, so that the etching ends at the durable high temperature resistant buffer layer 207 .

FIG. 2D is a schematic cross-sectional structure diagram of a specific embodiment of the improved structure of the copper metal on the back of the semiconductor element according to the present invention after at least one anti-oxidation metal layer is formed. Its main structure is substantially the same as the embodiment shown in FIG. 2C , except that at least one anti-oxidation metal layer 211 is formed under the back metal layer 209 . Therefore, the back metal layer 209 and the street-shaped grooves 215 are covered by at least one anti-oxidation metal layer 211 , thereby preventing the back metal layer 209 from being oxidized. The material constituting the at least one anti-oxidation metal layer 211 includes one selected from the following group: nickel, gold, palladium, vanadium, nickel-gold alloy, nickel-palladium alloy, palladium-gold alloy, nickel alloy and nickel-vanadium alloy. In a preferred embodiment, at least one anti-oxidation metal layer 211 includes a gold layer and a nickel-vanadium alloy layer.

FIG. 2E is a schematic cross-sectional structure diagram of another embodiment of the improved structure of the copper metal on the back of the semiconductor element according to the present invention. Its main structure is substantially the same as the embodiment shown in FIG. 2B , except that the back metal seed layer 205 includes a first layer 11 and a second layer 12 . The material constituting the first layer 11 is palladium, and the first layer 11 is formed on the back side of the substrate 201 . The material constituting the second sub-layer 12 is phosphorus, and the second sub-layer 12 is formed below the first sub-layer 11 . And the durable high temperature resistant buffer layer 207 is formed under the second sub-layer 12 . Because palladium can improve the adhesion to the substrate 201 , the first layer 11 of the backside metal seed layer 205 is designed to be formed on the backside of the substrate 201 . And because phosphorus can further improve the effect of preventing the copper metal of the back metal layer 209 from diffusing into the substrate 201, the second layer 12 of the back metal seed layer 205 is designed to be formed between the first layer 11 and the durable high temperature buffer layer Between 207.

FIG. 2F is a schematic cross-sectional structure diagram of another embodiment of the improved copper metal structure on the back of the semiconductor element of the present invention, in which street-shaped grooves are formed on the back metal layer. Its main structure is substantially the same as the embodiment shown in FIG. 2E , except that a street-shaped groove 215 is formed on the back metal layer 209 . To form the structure of the street-shaped groove 215, first define at least one area of the street-shaped groove 215 on the back metal layer 209 by exposure and development technology, and then define the back metal layer 209 in the area of at least one street-shaped groove 215 Etching is performed such that the etch terminates at the durable high temperature resistant buffer layer 207 .

FIG. 2G is a cross-sectional schematic view of another embodiment of the improved structure of copper metal on the back of the semiconductor device according to the present invention after at least one anti-oxidation metal layer is formed. Its main structure is substantially the same as the embodiment shown in FIG. 2F , except that at least one anti-oxidation metal layer 211 is formed under the back metal layer 209 . Therefore, the back metal layer 209 and the street-shaped grooves 215 are covered by at least one anti-oxidation metal layer 211 , thereby preventing the back metal layer 209 from being oxidized. The material constituting the at least one anti-oxidation metal layer 211 includes one selected from the following group: nickel, gold, palladium, vanadium, nickel-gold alloy, nickel-palladium alloy, palladium-gold alloy, nickel alloy and nickel-vanadium alloy. In a preferred embodiment, at least one anti-oxidation metal layer 211 includes a gold layer and a nickel-vanadium alloy layer.

The main purpose of the present invention is to provide an improved structure of the copper metal on the back of the semiconductor element, which helps to improve the long-lasting high-temperature operation characteristics of the element. The modified structure of the copper metal on the back of the semiconductor component must pass the endurance high temperature test (350°C, 30 minutes). Therefore, the improved structure of the copper metal on the back of the semiconductor device must be considered holistically. First, the back metal seed layer 205 must have good adhesion to the substrate 201 (GaAs). However, in the present invention, the palladium contained in the back metal seed layer 205 has good adhesion to the substrate 201 (GaAs). Secondly, a good diffusion barrier layer is also required to prevent the copper metal of the back metal layer 209 from diffusing into the substrate 201 . The palladium contained in the back metal seed layer 205 also acts as a diffusion barrier, preventing part of the copper metal in the back metal layer 209 from diffusing into the substrate 201 . But palladium isn't good enough. Therefore, the back metal seed layer 205 of the improved structure of the copper metal on the back of the semiconductor element of the present invention contains palladium and phosphorus. Among them, the diffusion barrier function of phosphorus is very outstanding, which can more effectively prevent the copper metal of the back metal layer 209 from diffusing into the substrate 201 . Both palladium and phosphorus contained in the back metal seed layer 205 can highly prevent the copper metal of the back metal layer 209 from diffusing into the substrate 201 . In one embodiment, when the distribution of palladium contained in the back metal seed layer 205 is closer to the substrate 201 , the palladium can exert its good adhesion to the substrate 201 (GaAs). The distribution of phosphorus contained in the back metal seed layer 205 is closer to the durable high temperature resistant buffer layer 207 , and can play the role of preventing the copper metal of the back metal layer 209 from diffusing into the substrate 201 together with palladium. Wherein, the durable high temperature resistant buffer layer 207 is made of nickel, silver or nickel alloy. The main factor in choosing nickel, silver or nickel alloys is the consideration of mutual fusion between the respective adjacent metals. The back metal layer 209 (copper) and the durable high temperature resistant buffer layer 207 (nickel, silver or nickel alloy) have good mutual melting at 350°C. Therefore, after the durable high temperature test (350° C., 30 minutes), the back metal layer 209 (copper) and the durable high temperature resistant buffer layer 207 (nickel, silver or nickel alloy) can fuse together well near their boundaries. Similarly, the durable high temperature resistant buffer layer 207 (nickel, silver or nickel alloy) and the back metal seed layer 205 (palladium) have good mutual melting at 350°C. Therefore, after a durable high temperature test (350° C., 30 minutes), the durable high temperature resistant buffer layer 207 (nickel, silver or nickel alloy) and the back metal seed layer 205 (palladium) can fuse together well near their boundaries. In a preferred embodiment, the design of the improved structure of the copper metal on the back of the semiconductor element includes a back metal seed layer 205 (comprising palladium and phosphorus), a durable high temperature buffer layer 207 (nickel, silver or nickel alloy) and a back metal Layer 209 (copper). The design of the improved structure of the copper metal on the back of the semiconductor element can pass the endurance high temperature test (350° C., 30 minutes). And after the persistent high temperature test (350°C, 30 minutes), there will be no metal peeling phenomenon or poor grounding of any components. Therefore, the reliability of components can be greatly improved.

Figure 2H is a partially enlarged view of Figure 2B. Figure 3A shows the improved structure of the copper metal on the back of the semiconductor element of the present invention after a durable high-temperature test, and then an Energy-Dispersive X-ray Spectrometer (EDS, Energy-Dispersive X-Ray Spectroscope) was used to analyze the c—c' section line in Figure 2H The analysis results of the structure. It can be clearly seen from Figure 3A that after the durable high temperature test (350°C, 30 minutes), the back metal layer 209 (copper) and the durable high temperature resistant buffer layer 207 (nickel) are well interfused near the boundaries of each other together. There is no clear boundary between the back metal layer 209 (copper) and the durable high temperature buffer layer 207 (nickel). Similarly, after the enduring high temperature test (350° C., 30 minutes), the enduring high temperature buffer layer 207 (nickel) and the back metal seed layer 205 (phosphorus, palladium) are well mixed together near the boundaries of each other. Even part of the durable high temperature resistant buffer layer 207 (nickel) has diffused to the back of the substrate 201 (GaAs), and mixed with part of the substrate 201 (GaAs). Wherein the back metal seed layer 205 contains phosphorus and palladium. The palladium contained in the back metal seed layer 205 is distributed closer to the back of the substrate 201 , and the phosphorus contained in the back metal seed layer 205 is distributed closer to the durable high temperature resistant buffer layer 207 . Similarly, after a persistent high temperature test (350° C., 30 minutes), the back metal seed layer 205 (phosphorus, palladium) and the substrate 201 (GaAs) are well mixed together near the boundaries of each other (especially closer to the substrate 201) On one side, palladium contained in the back metal seed layer 205). The phosphorous contained in the back metal seed layer 205 plays a role in preventing the copper metal of the back metal layer 209 from diffusing into the substrate 201 . From the results, it can be seen that part of the copper metal in the back metal layer 209 diffuses into the durable high temperature resistant buffer layer 207 (nickel). There is also a small portion of the copper metal of the backside metal layer 209 diffused into the phosphorous region contained in the backside metal seed layer 205 . However, the phosphorous contained in the back metal seed layer 205 blocks most of the copper metal of the back metal layer 209 from diffusing into the substrate 201 . Only a very small portion of the copper metal of the backside metal layer 209 diffuses into the substrate 201 . Please also refer to Figure 3B, which partially shows the test results of Figure 3A. Figure 3B is substantially the same as Figure 3A, except that the substrate 201 (GaAs) is not shown in Figure 3B. The distribution of phosphorus in the back metal seed layer 205 and the distribution of copper metal in the back metal layer 209 are more clearly shown in FIG. 3B .

Wherein a thickness of the durable high temperature buffer layer 207 is greater than and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than or greater than and less than

Wherein the back metal seed layer 205 has a thickness greater than and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than more than the and less than or greater than and less than

The present invention further provides a method for manufacturing an improved structure of copper metal on the back side of a semiconductor element, comprising the following steps: A1: forming an active layer 203 on a front side of a substrate 201, wherein the active layer 203 includes at least one integrated circuit A2: form a backside metal seed layer 205 on a backside of the substrate 201 to cover the backside of the substrate 201, wherein the material constituting the backside metal seed layer 205 includes palladium and phosphorus; A3: form a durable high temperature buffer layer 207 to cover the backside Metal seed layer 205; and A4: forming a back metal layer 209 to cover the durable high temperature buffer layer 207, wherein the material constituting the back metal layer 209 is copper. The palladium contained in the back metal seed layer 205 is distributed closer to the back of the substrate 201 , and the phosphorus contained in the back metal seed layer 205 is distributed closer to the durable high temperature resistant buffer layer 207 .

In addition, a method for manufacturing an improved structure of copper metal on the back of a semiconductor element of the present invention further includes the following steps: making at least one back via 213 on the back of the substrate 201 by using etching technology, wherein an inner surface of the back via 213 covered by the metal seed layer 205 on the back side.

In addition, step A2 further includes the following steps: forming a first layer 11 of the back metal seed layer 205 on the back side of the substrate 201, wherein the material constituting the first layer 11 is palladium; and forming a first layer 11 of the back metal seed layer 205 The second sub-layer 12 is under the first sub-layer 11 , wherein the material constituting the second sub-layer 12 is phosphorus, wherein the durable high temperature resistant buffer layer 207 is formed under the second sub-layer 12 of the back metal seed layer 205 .

In addition, a method for manufacturing an improved structure of copper metal on the back of a semiconductor element of the present invention further includes the following steps: defining at least one street-shaped groove area with a photomask on the back metal layer 209; etching the street-shaped groove area The inner back metal layer 209; stop etching on the durable high temperature buffer layer 207 to form street-like grooves 215 on the back metal layer 209; and form at least one anti-oxidation metal layer 211 to cover the back metal layer 209 and street-like grooves 215 to prevent metal oxidation.

In summary, according to the content disclosed above, the improved structure of the copper metal on the back side of a semiconductor element of the present invention is by using the back metal seed layer 205 (phosphorus, palladium), the durable high temperature buffer layer 207 (nickel , silver or nickel alloy) and the three-layer structure of the back metal layer 209 (copper), and with the upper substrate 201 (GaAs), the combination of the material selection makes each metal layer structure on the back pass the durable high temperature test, It still maintains the integrity of its structure, and it is not easy to produce voids, peeling or cracks, and it is not easy to cause poor grounding, and effectively enhances the long-lasting high-temperature operation characteristics of the chip and the reliability of the chip. And effectively prevent the copper metal of the back metal layer 209 from diffusing into the substrate 201 . Therefore, the present invention can clearly achieve the expected purpose of the invention, and provide an improved structure of the copper metal on the back of the semiconductor element, which is extremely valuable in industry.

The above embodiments are only exemplary, and do not constitute any limitation to the scope of the present invention. Those skilled in the art should understand that the details and forms of the technical solutions of the present invention can be modified or replaced without departing from the spirit and scope of the present invention, but these modifications and replacements all fall within the protection scope of the present invention.

Claims (12)

1. a kind of structure-improved of copper metal on back of semiconductor component, comprising:

One substrate, wherein the substrate is made of GaAs, indium phosphide, gallium nitride or silicon carbide；

One active layer is formed in a front of the substrate, and wherein the active layer includes an at least integrated circuit；

One back metal seed layer is formed in a back side of the substrate, wherein the material for constituting the back metal seed layer includes Palladium and phosphorus；

One resistance to lasting high temperature buffer layer, is formed in the lower section of the back metal seed layer, wherein constituting the resistance to lasting high-temperature buffer The material of layer is nickel, nickel alloy or silver, wherein the palladium for being contained in the back metal seed layer is distributed across and is closer to the substrate The back side, and the phosphorus for being contained in the back metal seed layer is distributed across and is closer to the resistance to lasting high temperature buffer layer；And

One metal layer on back is formed in the lower section of the resistance to lasting high temperature buffer layer, wherein the material for constituting the metal layer on back is Copper.

2. the structure-improved of copper metal on back of semiconductor component as described in claim 1, which is characterized in that be contained in the back side The distribution of the palladium of metal seed layer and the distribution for the phosphorus for being contained in the back metal seed layer at least partly mutually overlap.

3. a kind of structure-improved of copper metal on back of semiconductor component, comprising:

One substrate, wherein the substrate is made of GaAs, indium phosphide, gallium nitride or silicon carbide；

One active layer is formed in a front of the substrate, and wherein the active layer includes an at least integrated circuit；

One back metal seed layer is formed in a back side of the substrate, wherein the material for constituting the back metal seed layer includes Palladium and phosphorus；The back metal seed layer includes one first sublevel and one second sublevel, the material for constituting first sublevel are Palladium, and the material for constituting second sublevel is phosphorus, wherein first sublevel is formed in the back side of the substrate, the second sublevel shape At in the lower section of first sublevel；

One resistance to lasting high temperature buffer layer, is formed in the lower section of second sublevel of the back metal seed layer, wherein it is resistance to constitute this The material of lasting high temperature buffer layer is nickel, nickel alloy or silver；And

One metal layer on back is formed in the lower section of the resistance to lasting high temperature buffer layer, wherein the material for constituting the metal layer on back is Copper.

4. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that it is resistance to constitute this The material of lasting high temperature buffer layer is nickel alloy.

5. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that it is resistance to constitute this The material of lasting high temperature buffer layer is nickel.

6. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that it is resistance to constitute this The material of lasting high temperature buffer layer is silver.

7. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that further include to A few anti-oxidant metal layer, wherein an at least anti-oxidant metal layer is formed in the lower section of the metal layer on back.

8. the structure-improved of copper metal on back of semiconductor component as claimed in claim 7, which is characterized in that constitute this at least one The material of anti-oxidant metal layer includes selected from one of following group: nickel, gold, palladium, vanadium, Polarium and nickel alloy.

9. the structure-improved of copper metal on back of semiconductor component as claimed in claim 8, which is characterized in that the nickel alloy is Nickel billon, Ni-Pd alloy or nickel-vanadium alloy.

10. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that further include to A few guide hole, wherein an at least guide hole is formed in the back side of the substrate, and an inner surface of an at least guide hole is by the back side Metal seed layer is covered.

11. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that this is resistance to persistently One thickness of high temperature buffer layer is greater thanAnd it is less than

12. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that the back-side gold The thickness for belonging to seed layer is greater thanAnd it is less than