CN106505408B - Optimization method for passivation of cavity sidewall in active region of ridge-stripe semiconductor laser - Google Patents
Optimization method for passivation of cavity sidewall in active region of ridge-stripe semiconductor laser Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of optimization method of ridge bar shape semiconductor laser device active area cavity wall passivation, belongs to field of semiconductor technology.This method forms P-GaN active area vallum by performing etching to GaN sample, without remove photoresist step in the case where directly use one layer of Al thin layer of ALD deposition；One layer of SiO of redeposition2；Then stripping photoresist makes surface and the SiO of whole exposings that are etched2One layer of Al thin layer is all plated between layer；Finally, repeating the above standard photolithography steps carries out the technological operations such as n-type region windowing and plating expansion electrode.This method can effectively repair the influence compound for electrons and holes because of the O element of the rear surface attachment of the etching surface damage introduced and etching, and the oxide layer for aoxidizing formation can also protect the part P-GaN, effectively improve laser performance and service life.
Description
Technical field
The present invention relates to field of semiconductor technology, particularly relate to a kind of ridge bar shape semiconductor laser device active area cavity wall
The optimization method of passivation.
Background technique
The working principle of semiconductor laser is the reversion by generating enough population distributions, is greater than stimulated radiation
It absorbs, generates the gain of light, the light of generation is emitted after resonant cavity front-back internal reflection reaches some strength and forms laser.It is main at present
One of laser structure of stream is exactly stripe laser.Carrier and photon for active area is junction plane direction (lateral)
Restricted problem and the strip structure used, are an important milestones in semiconductor laser development history.Stripe laser is
On the direction for being parallel to pn-junction plane, the structure of bar shaped is produced, makes to be parallel and perpendicular in the both direction of pn-junction plane
Can limiting carrier, and generate the gain of light, it is established that the laser of stable light generation.Stripe laser is lateral in junction plane
With light wave limitation and carrier restriction scheme, it is for width contact.Strip structure makes the threshold value electricity of laser
Stream is greatly lowered, and improves near field and far field, longitudinal mode and transverse mode characteristic, improves the reliability etc. of device.
Earliest laser with strip geometry is to take electrode bar shaped or proton bombardment bar shaped.It is so-called in lateral optical confinement
" gain waveguide ".Substantially, it only limits the channel that electric current flows through, this to limit the side for being inevitably present Injection Current
To the sideways diffusion for extending and injecting carrier.
Cavity wall performance degradation (facet degradation) is the weight that large power long service life semiconductor laser faces
Want problem.To semiconductor edge-emitting laser, there are a large amount of dangling bonds in the cavity wall after cleavage or ion beam etching, are prohibiting
Many surface non-radiative complex centres or energy level are generated in band, will seriously affect the working life of laser.Therefore, how to reduce
It is the very urgent problem of large power long service life semiconductor laser that cavity wall, which fails or carries out better cavity wall passivation protection,.
In GaN base blue-green Laser, laser diode wall need to be formed through ion beam etching, in ion beam etching mistake
Ion dam age and nitrogen vacancy point defect etc. will be generated in journey, these point defects form dangling bonds and surface recombination center on surface.
Therefore, the defects of more point defects and surface recombination center are had on the side of laser.In addition, there are a large amount of oxygen on surface
Impurity, and induce new surface non-composite energy level.Although these defects can be through subsequent SiO2Surface passivation improvement is carried out, but
It is due to depositing SiO2When there are a large amount of ion, further damage is generated to laser cavity wall, it is multiple to increase surface non-radiative
Conjunction center and the decaying for accelerating cavity wall performance.
Currently, the manufacture craft of the manufacture laser ridges structure of mainstream is to first pass through dry etching technology on the active area
A ridge is etched under direction, plates one layer of oxygen insulating layer by the technologies such as magnetron sputtering or ion beam vapor deposition in ridge side periphery
(usually SiO2), make current limit in the current channel from ridge to active layer by insulating layer.According to this technical process,
There is a problem of following, i.e., this method can make the oxide layer above the section GaN generated after dry etching by SiO2Covering,
And the defects of damage caused by etching and dangling bonds, cannot repair, and can adversely affect to laser performance.To avoid
Or solve the above problems, the invention proposes a kind of passivation SiO2The method that one thin Al film layer of insertion is passivated optimization before.
Shorter compared to the bond distance of Ga-O key this process employs Al-O key, bond energy is bigger, therefore Al film can be sucked out and be attached to etching
The O on surface reduces impurity energy level.And Al film can repair the damage as caused by plasma bombardment when etching ridge strip structure
Wound.Al film can be oxidized to aluminum oxide film quickly after deposition, in this way can be to avoid deposition SiO2When to GaN etching surface
The effect of secondary injury is caused, simultaneously because aluminium oxide is insulator, it is possible to reduce electric leakage.In conclusion using this
It is multiple for electrons and holes that method can effectively repair the O element adhered to by the rear surface of the etching surface damage introduced and etching
The influence of conjunction, the oxide layer for aoxidizing formation can also protect the part P-GaN, effectively improve laser performance and service life.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of passivation of ridge bar shape semiconductor laser device active area cavity wall
Optimization method, this method can reduce preferably and be made in the GaN of vallum part due to being oxidized on the basis of traditional handicraft
At combined efficiency reduce influence, repair etching vallum when caused by etching injury and surface dangling bonds, improve device performance.
Specific step is as follows for this method:
(1) GaN sample is performed etching, forms P-GaN active area vallum；
(2) without remove photoresist step in the case where, one layer of Al thin layer of Direct precipitation on step (1) products obtained therefrom；
(3) one layer of SiO of Direct precipitation again on step (2) products obtained therefrom2；
(4) by step (3) products obtained therefrom stripping photoresist, make surface and the SiO of whole exposings that are etched2Between layer all
Plate one layer of Al thin layer；
(5) step (1)-(four) standard photolithography steps are repeated and carry out n-type region windowing and plating expansion electrode technique behaviour
Make.
Wherein, the vallum formed in step (1) is the resonant cavity for generating laser, and lithographic technique used in step (1) is
ICP-RIE dry etching technology.
The coating technique of depositing Al thin layer includes ALD, electron beam deposition, thermal evaporation deposition in step (2)；Plated Al is thin
Layer is grown on ridge strip structure side wall and entire SiO2Layer lower part.
In step (2) the temperature of depositing Al thin layer be 300 DEG C, institute's depositing Al thin layer with a thickness of 5-50nm.
The advantageous effects of the above technical solutions of the present invention are as follows:
In above scheme, the present invention is made that adjustment on the basis of traditional handicraft, to processing step, in the table being etched
Face and SiO2Between increase by one layer of Al.This way has following three points advantage:
1, the binding ability of Al and O is stronger, can adsorb the O in the GaN surface oxide layer after dry etching.O conduct
Impurity energy level meeting trapped carrier, reduces the recombination luminescence efficiency of electron hole.And O can be reduced GaN after Al layers of absorption
Middle O impurity increases laser luminous power；
2, the etching injury on the surface GaN can be repaired in conjunction with the dangling bonds on the surface GaN after etching for Al layers, reduce GaN
Surface state is for compound negative effect；
3, it can be oxidized to Al quickly for Al layers2O3, fine and close Al2O3Layer can stop to plate SiO2When plasma to GaN table
Vallum cavity is protected in the bombardment in face, and Al layers are got on by ALD deposition in itself, minimum for the damage of GaN.
Detailed description of the invention
Fig. 1 is the optimization method process signal that ridge bar shape semiconductor laser device active area cavity wall of the invention is passivated
Figure；
Fig. 2 is the optimization method process flow that ridge bar shape semiconductor laser device active area cavity wall of the invention is passivated
Figure.
Wherein: 1-P type semiconductor；2- multi-quantum pit structure；3-N type coating；4-N type semiconductor；5- substrate；6- ohm
Contact metal；7- photoresist；8- aluminium thin layer；9-SiO2Layer；10- expansion electrode.
Specific embodiment
To keep the technical problem to be solved in the present invention, technical solution and advantage clearer, below in conjunction with attached drawing and tool
Body embodiment is described in detail.
The structure of traditional ridge bar shape semiconductor laser device makes in one layer of SiO of vallum side wall direct plating2Layer, as limiting layer
Make current limit in the current channel from ridge to active layer, reduces threshold current.Due in plating SiO2Before, exposed GaN
Surface is inevitably oxidized, and dry etching damages for caused by the surface GaN and is also unable to get effective reparation,
Along with plating SiO2While can also introduce new damage, therefore there are also the spaces further promoted for the light ability that goes out of laser.
To overcome the above disadvantages, the performance of ridge bar shape semiconductor laser device is promoted, the present invention provides a kind of ridge half
The optimization method of conductor laser active area cavity wall passivation.
As depicted in figs. 1 and 2, specific step is as follows for this method:
(1) GaN sample is performed etching, forms P-GaN active area vallum；Specifically:
Handle preceding sample layer ecto-entad successively are as follows: P-type semiconductor 1, multi-quantum pit structure 2, N-type coating 3, N-type half
Conductor 4, substrate 5 etch P-GaN active area ridge on the basis of with the sample of the good metal ohmic contact 6 of magnetron sputtering
Item, that is, generate the resonant cavity of laser；
In this step, it first has to adequately clean sample, then be performed etching using photoresist as mask, had
Body includes:, the steam of removal sample surfaces absorption 10 minutes dry at 100 DEG C or more；Gluing, front baking expose, and development obtains
It exists only in above the vallum that will be etched out, 7 mask of photoresist that thickness is about 1.2 μm.Use equipment for burning-off photoresist by plasma
After removing 7 counterdie of photoresist, sample is put into inductively coupled plasma (inductively coupled plasma, ICP)
GaN etching is carried out in etching machine.The process gas includes Cl2And BCl3, the power difference of ICP source and print platform biasing radio frequency source
For 500W and 300W, etching depth about 500nm.
(2) without remove photoresist step in the case where, one layer of Al thin layer 8 of Direct precipitation on step (1) products obtained therefrom；
Specifically:
The substrate that step (1) is obtained impregnates 2 minutes in deionized water, then with 80 DEG C of standard cleaning liquid SC1
(NH40H:H2O2: H2O=1:1:5 it) cleans 10 minutes, then is cleaned and be dried with nitrogen with deionized water, be and then sent into sample
In ALD reaction chamber.The temperature of sample stage is increased to 300 DEG C, uses trimethyl aluminium TMA as aluminium presoma, use hydrogen as
Reducing agent, growth parameter(s) setting are as follows: 1, high-purity argon gas carry TMA enter settling chamber, duration 2.5s；2, argon purge 5s；
3, hydrogen reducing 15s, 4, argon purge 5s are passed through.ALD cycle is 50~500 periods, thickness about 5~50nm, actual deposition
Thickness is depending on specific experiment.
(3) one layer of SiO of Direct precipitation again on step (2) products obtained therefrom2；Specifically:
The sample that step (2) is obtained impregnates to be cleaned 2 minutes in deionized water, is dried with nitrogen, heavy using ICP-CVD
The SiO of product about 100nm2Layer 9.
(4) by step (3) products obtained therefrom stripping photoresist, make surface and the SiO of whole exposings that are etched2Between layer all
Plate one layer of Al thin layer；In this step, it is cleaned by ultrasonic 5 minutes using acetone, is then heated 20 minutes with 140 DEG C of NMP hot plate, then
It is cleaned by ultrasonic five minutes mistakes with isopropanol, then cleans drying with deionized water.
(5) step (1)-(four) standard photolithography steps are repeated and carry out n-type region windowing and plating 10 technique of expansion electrode
Operation.In this step, N-type windowing etches into downwards exposing n-type region with IBE, and expansion electrode 10 is plated using magnetically controlled sputter method
Ti/Pt/Au:50/100/50nm。
The coating technique of depositing Al thin layer includes ALD, electron beam deposition, thermal evaporation deposition in step (2)；Plated Al is thin
Layer is grown on ridge strip structure side wall and entire SiO2Layer lower part.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, several improvements and modifications can also be made, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (2)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610936664.8A CN106505408B (en) | 2016-11-01 | 2016-11-01 | Optimization method for passivation of cavity sidewall in active region of ridge-stripe semiconductor laser |
| PCT/CN2017/072084 WO2018082214A1 (en) | 2016-11-01 | 2017-01-22 | Ridge-shaped semiconductor laser active cavity side wall passivation optimization method |
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|---|---|---|---|
| CN201610936664.8A CN106505408B (en) | 2016-11-01 | 2016-11-01 | Optimization method for passivation of cavity sidewall in active region of ridge-stripe semiconductor laser |
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| CN106505408A CN106505408A (en) | 2017-03-15 |
| CN106505408B true CN106505408B (en) | 2019-02-15 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107147447A (en) * | 2017-04-18 | 2017-09-08 | 中山大学 | An optical beat frequency signal transmitting chip and its preparation method |
| CN110277733A (en) * | 2018-03-14 | 2019-09-24 | 中国科学院半导体研究所 | Semiconductor device chip structure and manufacturing method thereof |
| KR20240107341A (en) * | 2018-11-06 | 2024-07-09 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Micro-leds with ultra-low leakage current |
| CN118487106B (en) * | 2024-07-02 | 2024-12-10 | 度亘核芯光电技术(苏州)有限公司 | Cavity surface passivation method of semiconductor laser chip |
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| CN1394371A (en) * | 2000-08-22 | 2003-01-29 | 三井化学株式会社 | Method for manufacturing semiconductor laser device |
| CN101820134A (en) * | 2010-04-21 | 2010-09-01 | 中国科学院半导体研究所 | Method for passivating cavity surface of GaAs-based semiconductor laser |
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| CN106505408A (en) | 2017-03-15 |
| WO2018082214A1 (en) | 2018-05-11 |
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