CN106505128A - A kind of preparation method of silicon-based heterojunction battery - Google Patents
A kind of preparation method of silicon-based heterojunction battery Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 53
- 239000010703 silicon Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 99
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910052802 copper Inorganic materials 0.000 claims abstract description 77
- 239000010949 copper Substances 0.000 claims abstract description 77
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 42
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 36
- 239000001301 oxygen Substances 0.000 claims abstract description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 21
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract 30
- 230000008021 deposition Effects 0.000 claims abstract 9
- 238000000151 deposition Methods 0.000 claims description 14
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000004062 sedimentation Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 49
- 235000012431 wafers Nutrition 0.000 description 24
- 238000000034 method Methods 0.000 description 10
- 238000009713 electroplating Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
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- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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Abstract
Description
技术领域technical field
本发明涉及太阳能电池领域，尤其涉及一种硅基异质结电池的制备方法。The invention relates to the field of solar cells, in particular to a method for preparing a silicon-based heterojunction cell.
背景技术Background technique
薄膜太阳能电池是在基板上沉积很薄的光电材料形成的一种太阳能电池。薄膜太阳能电池弱光条件下仍可发电，其生产过程能耗低，具备大幅度降低原料和制造成本的潜力，因此，市场对薄膜太阳能电池的需求正逐渐增长，而薄膜太阳能电池技术更是成为近年来的研究热点，其中提高光电转换效率，降低成本是太阳能行业的终极目标。A thin film solar cell is a solar cell formed by depositing a thin photoelectric material on a substrate. Thin-film solar cells can still generate electricity under weak light conditions, and their production process consumes less energy, which has the potential to greatly reduce raw material and manufacturing costs. Therefore, the market demand for thin-film solar cells is gradually increasing, and thin-film solar cell technology has become a Research hotspots in recent years, in which improving photoelectric conversion efficiency and reducing costs are the ultimate goals of the solar industry.
硅基异质结电池片是目前高效太阳能电池片研发的方向之一。硅基异质结电池片的衬底一般以N-型单晶硅片为主，一面通过与非晶硅薄膜形成P-N结作为发射极，另一面用以相同方法沉积的同类型的非晶硅层作为背接触。当非晶硅薄膜在硅片正反两边依次形成之后，下一步是通过PVD溅射的方法在正反两边依次沉积一层透明导电膜层，而后用电镀法在透明导电膜层表面形成铜金属栅线。在电镀铜栅线电极之前，需要用PVD溅射的方法沉积阻挡层和种子层作为电镀铜与导电氧化物之间的过渡结合层。Silicon-based heterojunction cells are one of the current research and development directions for high-efficiency solar cells. The substrate of a silicon-based heterojunction solar cell is generally an N-type single crystal silicon wafer. One side forms a P-N junction with an amorphous silicon film as an emitter, and the other side uses the same type of amorphous silicon deposited by the same method. layer as the back contact. After the amorphous silicon film is formed on the front and back of the silicon wafer, the next step is to deposit a layer of transparent conductive film on the front and back by PVD sputtering, and then use electroplating to form copper metal on the surface of the transparent conductive film. grating. Before electroplating the copper grid line electrodes, a barrier layer and a seed layer need to be deposited by PVD sputtering as a transition bonding layer between electroplated copper and conductive oxide.
为了提高太阳能器件的性能，其栅线电极的厚度必须要足够厚，以用来减小串联电阻，典型的要高于20微米。传统的溅射由于价格成本的原因往往不适用于铜栅线电极的制备，而往往是采用电镀的方式。溅射铜的几千埃用于种子层的制备，以减少在初始镀覆期间的其表面电位差。电镀图案形成后，一些有机材料，主要为碳仍然存在于铜电镀的区域。这种残余的碳会导致在溅射铜和电镀铜之间形成电屏障，从而降低太阳能器件的性能，而且有可能会导致铜的剥离，影响太阳能器件的可靠性。In order to improve the performance of the solar device, the thickness of the grid electrode must be thick enough to reduce the series resistance, typically higher than 20 microns. Traditional sputtering is often not suitable for the preparation of copper grid wire electrodes due to price and cost, and electroplating is often used. A few thousand Å of sputtered copper is used for the preparation of the seed layer to reduce its surface potential difference during the initial plating. After the plating pattern is formed, some organic material, mainly carbon, remains in the copper plated areas. This residual carbon can lead to the formation of an electrical barrier between the sputtered copper and the electroplated copper, thereby degrading the performance of the solar device, and may cause the peeling of the copper, affecting the reliability of the solar device.
发明内容Contents of the invention
为了解决现有技术中的问题，本发明提供了一种硅基异质结电池的制备方法，其制备的太阳能器件的可靠性高、性能好。In order to solve the problems in the prior art, the invention provides a method for preparing a silicon-based heterojunction cell, and the solar device prepared by the method has high reliability and good performance.
为实现上述目的，本发明提供了一种硅基异质结电池的制备方法，包括以下步骤：提供N型硅片；在N型硅片的一面上沉积本征非晶硅膜层和N型非晶硅层，另一面上沉积本征非晶硅膜层和P型非晶硅层；分别在P型非晶硅层和N型非晶硅层上沉积透明导电膜层；分别在P型非晶硅层和N型非晶硅层的透明导电膜层上沉积阻挡层和种子铜层；分别在两面的种子铜层上铺设感光干膜，通过曝光和显影在种子铜层上形成栅线图案；通过含氧等离子体与种子铜层表面的碳残留物反应后生成二氧化碳以去除种子铜层上的碳残留物；在种子铜层的栅线图案上电镀铜，形成铜栅线电极。To achieve the above object, the present invention provides a method for preparing a silicon-based heterojunction battery, comprising the following steps: providing an N-type silicon wafer; depositing an intrinsic amorphous silicon film layer and an N-type silicon wafer on one side of the N-type silicon wafer. An amorphous silicon layer, on the other side deposit an intrinsic amorphous silicon film layer and a P-type amorphous silicon layer; respectively deposit a transparent conductive film layer on the P-type amorphous silicon layer and an N-type amorphous silicon layer; A barrier layer and a seed copper layer are deposited on the transparent conductive film layer of the amorphous silicon layer and the N-type amorphous silicon layer; a photosensitive dry film is laid on the seed copper layer on both sides respectively, and grid lines are formed on the seed copper layer by exposure and development pattern; the oxygen-containing plasma reacts with the carbon residue on the surface of the seed copper layer to generate carbon dioxide to remove the carbon residue on the seed copper layer; copper is electroplated on the grid line pattern of the seed copper layer to form a copper grid line electrode.
优选的，所述分别在N型硅片的一面上沉积本征非晶硅膜层和N型非晶硅层，另一面上沉积本征非晶硅膜层和P型非晶硅层，具体为先沉积两面的本征非晶硅膜层，再沉积N型非晶硅层、P型非晶硅层。Preferably, the intrinsic amorphous silicon film layer and the N-type amorphous silicon layer are deposited on one side of the N-type silicon wafer, and the intrinsic amorphous silicon film layer and the P-type amorphous silicon layer are deposited on the other side, specifically The intrinsic amorphous silicon film layers on both sides are deposited first, and then the N-type amorphous silicon layer and the P-type amorphous silicon layer are deposited.
优选的，所述分别在N型硅片的一面上沉积本征非晶硅膜层和N型非晶硅层，另一面上沉积本征非晶硅膜层和P型非晶硅层，具体为先沉积两面的本征非晶硅膜层，再沉积P型非晶硅层、N型非晶硅层。Preferably, the intrinsic amorphous silicon film layer and the N-type amorphous silicon layer are deposited on one side of the N-type silicon wafer, and the intrinsic amorphous silicon film layer and the P-type amorphous silicon layer are deposited on the other side, specifically The intrinsic amorphous silicon film layers on both sides are deposited first, and then the P-type amorphous silicon layer and the N-type amorphous silicon layer are deposited.
优选的，所述分别在N型硅片的一面上沉积本征非晶硅膜层和N型非晶硅层，另一面上沉积本征非晶硅膜层和P型非晶硅层，具体为先沉积其中一面的本征非晶硅膜层、P型非晶硅层，再沉积另一面的本征非晶硅膜层、N型非晶硅层。Preferably, the intrinsic amorphous silicon film layer and the N-type amorphous silicon layer are deposited on one side of the N-type silicon wafer, and the intrinsic amorphous silicon film layer and the P-type amorphous silicon layer are deposited on the other side, specifically The intrinsic amorphous silicon film layer and the P-type amorphous silicon layer on one side are deposited first, and then the intrinsic amorphous silicon film layer and N-type amorphous silicon layer on the other side are deposited.
优选的，所述分别在N型硅片的一面上沉积本征非晶硅膜层和N型非晶硅层，另一面上沉积本征非晶硅膜层和P型非晶硅层，具体为先沉积其中一面的本征非晶硅膜层、N型非晶硅层，再沉积另一面的本征非晶硅膜层、P型非晶硅层。Preferably, the intrinsic amorphous silicon film layer and the N-type amorphous silicon layer are deposited on one side of the N-type silicon wafer, and the intrinsic amorphous silicon film layer and the P-type amorphous silicon layer are deposited on the other side, specifically The intrinsic amorphous silicon film layer and the N-type amorphous silicon layer on one side are deposited first, and then the intrinsic amorphous silicon film layer and P-type amorphous silicon layer on the other side are deposited.
优选的，所述通过含氧等离子体与种子铜层表面的碳残留物反应后生产二氧化碳以去除碳残留物为通入10-1000sccm的氧气，在10-1000Pa气压，功率密度0.05-0.5W/cm2下产生含氧等离子体，电离的含氧等离子体轰击种子铜层表面，轰击时间为1-60S，与种子铜层表面的碳残留物反应生成二氧化碳。Preferably, the production of carbon dioxide after the oxygen-containing plasma reacts with the carbon residue on the surface of the seed copper layer to remove the carbon residue is to feed 10-1000 sccm of oxygen, at a pressure of 10-1000Pa, and a power density of 0.05-0.5W/ The oxygen-containing plasma is generated under cm 2 , and the ionized oxygen-containing plasma bombards the surface of the seed copper layer for 1-60 seconds, and reacts with the carbon residue on the surface of the seed copper layer to generate carbon dioxide.
优选的，所述通过含氧等离子体与种子铜层表面的碳残留物反应后生产二氧化碳以去除碳残留物为通入10-1000sccm的氧气，在标准大气气压下，功率密度0.05-0.5W/cm2下产生含氧等离子体，电离的含氧等离子体轰击种子铜层表面，轰击时间为1-60S，与种子铜层表面的碳残留物反应生成二氧化碳。Preferably, the production of carbon dioxide after the oxygen-containing plasma reacts with the carbon residue on the surface of the seed copper layer to remove the carbon residue is to feed 10-1000 sccm of oxygen, and at standard atmospheric pressure, the power density is 0.05-0.5W/ The oxygen-containing plasma is generated under cm 2 , and the ionized oxygen-containing plasma bombards the surface of the seed copper layer for 1-60 seconds, and reacts with the carbon residue on the surface of the seed copper layer to generate carbon dioxide.
优选的，所述产生电离为通过直流电源或射频源。Preferably, the generation of ionization is through a DC power source or a radio frequency source.
优选的，所述本征非晶硅膜层的厚度为1-10nm，所述P型非晶硅层和N型非晶硅层的厚度分别为5-10nm，所述透明导电膜的厚度为25-110nm。Preferably, the thickness of the intrinsic amorphous silicon film layer is 1-10 nm, the thicknesses of the P-type amorphous silicon layer and the N-type amorphous silicon layer are respectively 5-10 nm, and the thickness of the transparent conductive film is 25-110nm.
优选的，所述透明导电膜层通过PVD溅射沉积。Preferably, the transparent conductive film layer is deposited by PVD sputtering.
本发明采用以上设计方案，通过含氧等离子体和碳残留物之间的反应形成二氧化碳气体，有效地去除了种子铜层上的残留物，更加有效地防止后续电镀的栅线电极剥离，去除杂质残留物后，提高了太阳能器件的可靠性，加大了光电转换效率，提高了其性能。The present invention adopts the above design scheme, forms carbon dioxide gas through the reaction between the oxygen-containing plasma and the carbon residue, effectively removes the residue on the seed copper layer, and more effectively prevents the stripping of the gate electrode of subsequent electroplating and removes impurities. After removing the residue, the reliability of the solar device is improved, the photoelectric conversion efficiency is increased, and its performance is improved.
附图说明Description of drawings
图1为本发明硅基异质结电池的制备方法实施例1的流程图；Fig. 1 is the flowchart of Example 1 of the preparation method of silicon-based heterojunction battery of the present invention;
图2-图5为本发明硅基异质结电池实施例1的结构形成过程示意图；2-5 are schematic diagrams of the structure formation process of Embodiment 1 of the silicon-based heterojunction battery of the present invention;
图6为本发明硅基异质结电池的制备方法实施例2的流程图。FIG. 6 is a flow chart of Example 2 of the method for preparing a silicon-based heterojunction battery according to the present invention.
具体实施方式detailed description
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
实施例1：Example 1:
如图1所示，本发明公开了一种硅基异质结电池的制备方法，其包括以下步骤：As shown in Figure 1, the present invention discloses a method for preparing a silicon-based heterojunction cell, which includes the following steps:
S101：提供N型硅片；S101: Provide N-type silicon wafers;
S102：分别在N型硅片的两面上沉积本征非晶硅膜层；S102: Deposit intrinsic amorphous silicon film layers on both sides of the N-type silicon wafer;
S103：在N型硅片的一面本征非晶硅膜层上沉积N型非晶硅层；S103: Depositing an N-type amorphous silicon layer on one side of the N-type silicon wafer with an intrinsic amorphous silicon film layer;
S104：在N型硅片的另一面本征非晶硅膜层上沉积P型非晶硅层；S104: depositing a P-type amorphous silicon layer on the intrinsic amorphous silicon film layer on the other side of the N-type silicon wafer;
S105:分别在P型非晶硅层和N型非晶硅层上通过PVD溅射透明导电膜层；S105: sputtering a transparent conductive film layer by PVD on the P-type amorphous silicon layer and the N-type amorphous silicon layer respectively;
S106：分别在P型非晶硅层和N型非晶硅层的透明导电膜层上沉积阻挡层和种子铜层；S106: Depositing a barrier layer and a seed copper layer on the transparent conductive film layer of the P-type amorphous silicon layer and the N-type amorphous silicon layer respectively;
S107：分别在两面的种子铜层上铺设感光干膜，通过曝光和显影在种子铜层上形成栅线图案；S107: laying a photosensitive dry film on the seed copper layer on both sides respectively, and forming a grid line pattern on the seed copper layer by exposure and development;
S108：通过含氧等离子体与种子铜层表面的碳残留物反应后生成二氧化碳以去除种子铜层上的碳残留物；S108: generating carbon dioxide by reacting the oxygen-containing plasma with the carbon residue on the surface of the seed copper layer to remove the carbon residue on the seed copper layer;
S109：在种子铜层的栅线图案上电镀铜，形成铜栅线电极。S109 : electroplating copper on the grid line pattern of the seed copper layer to form a copper grid line electrode.
具体的步骤可以如下：The specific steps can be as follows:
提供N型硅片1，对N型硅片1清洗和制绒，然后在150-220℃温度条件下，将N型硅片1放置反应腔中，往反应腔中通入SiH4和H2的混合气体，其中SiH4的含量为10％至50％，H2的含量为5％至20％，通过化学气相沉积的方法在N型硅片的两面上沉积形成本征非晶硅膜层2、7，形成如图2所示的结构。Provide an N-type silicon wafer 1, clean and texture the N-type silicon wafer 1, then place the N-type silicon wafer 1 in the reaction chamber at a temperature of 150-220°C, and feed SiH 4 and H 2 into the reaction chamber The mixed gas, in which the content of SiH 4 is 10% to 50%, and the content of H 2 is 5% to 20%, is deposited on both sides of the N-type silicon wafer by chemical vapor deposition to form an intrinsic amorphous silicon film layer 2, 7 to form the structure shown in Figure 2.
将形成本征非晶硅膜层N型硅片放入掺杂腔内，往掺杂腔中通入SiH4、H2以及含掺杂剂P的气体，由此在本征非晶硅膜层2上沉积N型非晶硅层3；继续通入SiH4和H2气体，并且同步通入含掺杂剂B的气体，在本征非晶硅膜层7上形成P型非晶硅层8，形成如图3所示的结构；Put the N-type silicon wafer forming the intrinsic amorphous silicon film layer into the doping chamber, and pass SiH 4 , H 2 and the gas containing dopant P into the doping chamber, so that the intrinsic amorphous silicon film Deposit N-type amorphous silicon layer 3 on layer 2; continue to feed SiH 4 and H 2 gases, and simultaneously feed gas containing dopant B to form P-type amorphous silicon on intrinsic amorphous silicon film layer 7 Layer 8, forming the structure shown in Figure 3;
在P型非晶硅层8和N型非晶硅层3上分别通过PVD磁控溅射的方法生成透明导电膜层4、9和阻挡层5、10以及种子铜层6、11，然后再在种子铜层6、11上进行掩膜、曝光、显影后形成金属栅线图案，形成如图4所示的结构；On P-type amorphous silicon layer 8 and N-type amorphous silicon layer 3, generate transparent conductive film layer 4,9 and barrier layer 5,10 and seed copper layer 6,11 by the method for PVD magnetron sputtering respectively, then After masking, exposing and developing on the seed copper layers 6 and 11, a metal grid line pattern is formed to form a structure as shown in FIG. 4 ;
把N型硅片放入充有含氧等离子体的空间中，使得在种子铜层表面的含碳残留物与氧气进行反应，生成二氧化碳，从而去除碳残留物；Put the N-type silicon wafer into a space filled with oxygen-containing plasma, so that the carbon-containing residue on the surface of the seed copper layer reacts with oxygen to generate carbon dioxide, thereby removing the carbon residue;
在种子铜层6、11上电镀铜，去除掉干膜，并对铜层进行选择性腐蚀，从而在表面形成铜栅线电极12、13，至此完成电池制备，形成如图5所示的结构。Copper is electroplated on the seed copper layers 6, 11, the dry film is removed, and the copper layer is selectively etched, thereby forming copper grid wire electrodes 12, 13 on the surface, so far the battery preparation is completed, forming the structure shown in Figure 5 .
其中，所述本征非晶硅膜层2、7的厚度为1-10nm，所述P型非晶硅层8和N型非晶硅层3的厚度分别为5-10nm，所述透明导电膜4、9的厚度为25-110nm。Wherein, the thickness of the intrinsic amorphous silicon film layers 2 and 7 is 1-10 nm, the thickness of the P-type amorphous silicon layer 8 and the N-type amorphous silicon layer 3 are respectively 5-10 nm, and the transparent conductive The thickness of the films 4, 9 is 25-110 nm.
其中，本发明所述通过含氧等离子体与种子铜层表面的残留物反应去除残留物具体为含氧等离子体中的氧气与种子铜层表面的碳残留物反应后生产二氧化碳，即：C+02＝CO2。本发明通过含氧等离子体和碳残留物之间的反应形成二氧化碳气体，有效地去除了种子铜层上的残留物，更加有效地防止后续电镀的栅线电极剥离，去除杂质残留物后，提高了太阳能器件的可靠性，加大了光电转换效率，提高了其性能。Wherein, the removal of residues by reacting the oxygen-containing plasma with the residues on the surface of the seed copper layer in the present invention is specifically to produce carbon dioxide after the reaction of oxygen in the oxygen-containing plasma with the carbon residues on the surface of the seed copper layer, that is: C+ 0 2 =CO 2 . The present invention forms carbon dioxide gas through the reaction between the oxygen-containing plasma and the carbon residue, effectively removes the residue on the seed copper layer, and more effectively prevents the stripping of the grid wire electrodes of the subsequent electroplating. After removing the impurity residue, the improvement Improve the reliability of solar devices, increase the photoelectric conversion efficiency, and improve its performance.
其中，所述通过含氧等离子体与种子铜层表面的碳残留物反应后生产二氧化碳以去除碳残留物为通入10-1000sccm的氧气，在10-1000Pa气压，功率密度0.05-0.5W/cm2下产生含氧等离子体，电离的含氧等离子体轰击种子铜层表面，轰击时间为1-60S，与种子铜层表面的碳残留物反应生成二氧化碳。所述产生电离为通过直流电源。Wherein, the production of carbon dioxide through the reaction of oxygen-containing plasma with the carbon residue on the surface of the seed copper layer to remove the carbon residue is to feed 10-1000 sccm of oxygen, at a pressure of 10-1000 Pa, and a power density of 0.05-0.5 W/cm 2. Oxygen-containing plasma is generated, and the ionized oxygen-containing plasma bombards the surface of the seed copper layer for 1-60 seconds, and reacts with the carbon residue on the surface of the seed copper layer to generate carbon dioxide. The generation of ionization is through a direct current power supply.
实施例2：Example 2:
如图6所示，与实施例1不一样的是，本实施例中，先沉积其中一面上本征非晶硅膜层和N型非晶硅层，再沉积另一面上的本征非晶硅膜层和P型非晶硅层，具体如下：As shown in Figure 6, the difference from Example 1 is that in this example, the intrinsic amorphous silicon film layer and the N-type amorphous silicon layer on one side are deposited first, and then the intrinsic amorphous silicon layer on the other side is deposited. The silicon film layer and the P-type amorphous silicon layer are as follows:
S601：提供N型硅片；S601: Provide N-type silicon wafers;
S602：在N型硅片的一面上沉积本征非晶硅膜层和N型非晶硅层；S602: Depositing an intrinsic amorphous silicon film layer and an N-type amorphous silicon layer on one side of the N-type silicon wafer;
S603：在N型硅片的另一面上沉积本征非晶硅膜层和P型非晶硅层；S603: Depositing an intrinsic amorphous silicon film layer and a P-type amorphous silicon layer on the other surface of the N-type silicon wafer;
在具体实施例中，还可以先在在N型硅片的一面上沉积本征非晶硅膜层和P型非晶硅层；再在N型硅片的另一面上沉积本征非晶硅膜层和P型非晶硅层；In a specific embodiment, it is also possible to deposit an intrinsic amorphous silicon film layer and a P-type amorphous silicon layer on one side of the N-type silicon wafer; then deposit the intrinsic amorphous silicon on the other side of the N-type silicon wafer film layer and P-type amorphous silicon layer;
S604:分别在P型非晶硅层和N型非晶硅层上通过PVD溅射透明导电膜层；S604: sputtering a transparent conductive film layer by PVD on the P-type amorphous silicon layer and the N-type amorphous silicon layer respectively;
S605：分别在P型非晶硅层和N型非晶硅层的透明导电膜层上沉积阻挡层和种子铜层；S605: Depositing a barrier layer and a seed copper layer on the transparent conductive film layer of the P-type amorphous silicon layer and the N-type amorphous silicon layer respectively;
S606：分别在两面的种子铜层上铺设感光干膜，通过曝光和显影在种子铜层上形成栅线图案；S606: laying a photosensitive dry film on the seed copper layer on both sides respectively, and forming a grid line pattern on the seed copper layer by exposure and development;
S607：通过含氧等离子体与种子铜层表面的碳残留物反应后生成二氧化碳以去除种子铜层上的碳残留物；S607: Removing the carbon residue on the seed copper layer by generating carbon dioxide after the oxygen-containing plasma reacts with the carbon residue on the surface of the seed copper layer;
S608：在种子铜层的栅线图案上电镀铜，形成铜栅线电极。S608: Electroplating copper on the grid line pattern of the seed copper layer to form a copper grid line electrode.
其中，所述通过含氧等离子体与种子铜层表面的碳残留物反应后生产二氧化碳以去除碳残留物为通入10-1000sccm的氧气，在标准大气压条件下，功率密度0.05-0.5W/cm2下产生含氧等离子体，电离的含氧等离子体轰击种子铜层表面，轰击时间为1-60S，与种子铜层表面的碳残留物反应生成二氧化碳。所述产生电离为通过射频源。Wherein, the production of carbon dioxide through the reaction of the oxygen-containing plasma with the carbon residue on the surface of the seed copper layer to remove the carbon residue is 10-1000 sccm of oxygen, and under standard atmospheric pressure conditions, the power density is 0.05-0.5W/cm 2. Oxygen-containing plasma is generated, and the ionized oxygen-containing plasma bombards the surface of the seed copper layer for 1-60 seconds, and reacts with the carbon residue on the surface of the seed copper layer to generate carbon dioxide. The generating ionization is by a radio frequency source.
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.
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