CN106504971A - A kind of plasma etching method and plasma etching device - Google Patents
A kind of plasma etching method and plasma etching device Download PDFInfo
- Publication number
- CN106504971A CN106504971A CN201710002475.8A CN201710002475A CN106504971A CN 106504971 A CN106504971 A CN 106504971A CN 201710002475 A CN201710002475 A CN 201710002475A CN 106504971 A CN106504971 A CN 106504971A
- Authority
- CN
- China
- Prior art keywords
- light intensity
- product
- wavelength
- etching
- etching chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 122
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000010586 diagram Methods 0.000 claims description 29
- 238000001514 detection method Methods 0.000 claims description 23
- 239000013307 optical fiber Substances 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000000047 product Substances 0.000 description 79
- 239000007789 gas Substances 0.000 description 31
- 239000007787 solid Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32981—Gas analysis
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of plasma etching method and plasma etching device, is related to display technology field, can improve substrate yield.The plasma etching method includes：From etching cavity, Real-time Collection obtains wavelength plot of light intensity, and according to the wavelength plot of light intensity, obtains the most product of content in the etching cavity；Temperature in etching cavity according to the product real-time control.For etching substrate to be etched.
Description
Technical Field
The invention relates to the technical field of display, in particular to a plasma etching method and a plasma etching device.
Background
In the process of manufacturing the substrate, a plasma etching method is often used to form a predetermined pattern on the substrate. The plasma etching is to generate low-temperature plasma by using a high-frequency power supply and reaction gas, wherein the low-temperature plasma comprises ions and free radicals, and the ions and the free radicals react with substances which are not covered by photoresist on a substrate to be etched to generate volatile substances, so that the etching effect is achieved.
In the prior art, a chemical formula of a reaction product is analyzed according to components of a film layer to be etched, a temperature and vapor pressure curve corresponding to the reaction product is searched, and temperatures corresponding to solid and gaseous critical points of the reaction product are found and used as temperatures of an etching chamber to etch a substrate to be etched. The temperature within the chamber is fixed throughout the etching process.
However, since the composition of the product in the etching chamber changes during the etching process, the temperature of the fixed chamber cannot be completely matched with the vapor pressure of each product, so that some of the product cannot be pumped out of the etching chamber in a gaseous state, but can be deposited on the upper electrode plate of the etching chamber or the inner wall plate of the etching chamber in a solid state, and when the deposit reaches a certain weight, the deposit falls off the surface of the substrate to be etched, thereby causing the substrate to generate foreign matter defects.
Disclosure of Invention
Embodiments of the present invention provide a plasma etching method and a plasma etching apparatus, which can improve the yield of a substrate.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
in one aspect, a plasma etching method is provided, including: acquiring a wavelength-light intensity diagram from an etching chamber in real time, and obtaining a product with the maximum content in the etching chamber according to the wavelength-light intensity diagram; and controlling the temperature in the etching chamber in real time according to the product.
Preferably, obtaining the product with the largest content in the etching chamber according to the wavelength-light intensity diagram specifically includes: obtaining the wavelength with the strongest light intensity in the etching chamber according to the wavelength-light intensity diagram; and obtaining a product corresponding to the wavelength with the strongest light intensity.
Further preferably, the method further comprises: acquiring a time-light intensity graph corresponding to a preset wavelength, and detecting the etching end point of the film layer corresponding to the preset wavelength according to the time-light intensity graph.
Preferably, the controlling the temperature in the etching chamber in real time according to the product specifically includes: obtaining the solid-gas critical temperature of the product according to the product; and controlling the temperature of the etching chamber to be equal to the solid-gas critical temperature.
Further preferably, obtaining the solid-gas critical temperature of the product according to the product specifically includes: and obtaining the solid-gas critical temperature of the product according to the product and the temperature and vapor pressure curve of the product.
Or, according to the product, the solid-gas critical temperature of the product is obtained by searching a product-solid-gas critical temperature comparison table.
In another aspect, there is provided a plasma etching apparatus including: the device comprises an etching chamber, an end point detection structure and a temperature control structure; the etching chamber is used for etching the substrate to be etched; the end point detection structure is used for acquiring a wavelength-light intensity diagram from the etching chamber in real time and obtaining a product with the maximum content in the etching chamber according to the wavelength-light intensity diagram; and the temperature control structure is used for controlling the temperature in the etching chamber in real time according to the product.
Preferably, the endpoint detection structure is specifically configured to: acquiring a wavelength-light intensity diagram from the etching chamber in real time; obtaining the wavelength with the strongest light intensity in the etching chamber according to the wavelength-light intensity diagram; and obtaining a product corresponding to the wavelength with the strongest light intensity.
Further preferably, the endpoint detection structure is further configured to: acquiring a time-light intensity graph corresponding to a preset wavelength, and detecting the etching end point of the film layer corresponding to the preset wavelength according to the time-light intensity graph.
Preferably, the temperature control structure is specifically configured to: obtaining the solid-gas critical temperature of the product according to the product; and controlling the temperature of the etching chamber to be equal to the solid-gas critical temperature.
In view of the above, preferably, the endpoint detection structure includes: a light intensity collector, an optical fiber, and a controller; the light intensity collector is used for collecting light intensity signals of various wavelengths in the etching chamber and transmitting the light intensity signals to the controller through the optical fibers; and the controller converts the light intensity signal into a digital signal to obtain the wavelength-light intensity diagram.
The embodiment of the invention provides a plasma etching method and a plasma etching device, which can ensure that main products in an etching chamber can be pumped out of the etching chamber in a gaseous state and cannot be deposited in the etching chamber in a solid state by collecting the products in the etching chamber in real time and monitoring the temperature in the etching chamber in real time according to the products, so that the deposits cannot fall off on the surface of a substrate to be etched, and the yield of the substrate is ensured.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a graph of wavelength versus intensity for each wavelength in an etch chamber according to an embodiment of the present invention;
FIG. 2 is a graph of light intensity over time for various wavelengths provided by an embodiment of the present invention;
FIG. 3 is a flow chart of a plasma etching method according to an embodiment of the present invention;
FIG. 4 is a graph of light intensity over time for a predetermined wavelength according to an embodiment of the present invention;
fig. 5 is a plasma etching apparatus according to an embodiment of the present invention.
Reference numerals:
10-etching a chamber; 20-an endpoint detection configuration; 30-temperature control structure.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The principle of plasma etching is as follows: and generating low-temperature plasma by utilizing a high-frequency power supply and reaction gas, wherein the low-temperature plasma comprises ions and free radicals, the ions and the free radicals react with substances which are not covered by the photoresist on the substrate to be etched to generate volatile substances, the temperature in the etching chamber is controlled to be equal to the solid-gas critical temperature of the product with the maximum content, the product is converted into gas, the gas is pumped out of the etching chamber by a vacuum pump, and the etching of the substrate to be etched is completed.
The embodiment of the invention provides a plasma etching method, which comprises the following steps:
s10, acquiring the wavelength-light intensity diagram shown in figure 1 from the etching chamber in real time, and obtaining the product with the maximum content in the etching chamber according to the wavelength-light intensity diagram.
The collection mode of the wavelength-light intensity map is not limited, for example, the wavelength-light intensity map of each wavelength in the etching chamber can be collected in real time by using an end point detection device, but not limited thereto. The endpoint detection device is an optical analysis instrument for monitoring and judging the degree of etching reaction.
Here, fig. 1 is a graph of wavelength versus intensity of light at each wavelength in the etching chamber at a certain time, and the abscissa in fig. 1 represents the length of the wavelength in nm; the ordinate indicates the intensity of the light intensity. The light intensity is stronger for the wavelengths corresponding to point A, B, C, D, E, five in fig. 1, but is strongest for the wavelengths corresponding to point E, in contrast. One product corresponds to one wavelength, and the intensity of light is the strongest, which indicates that the content of the product corresponding to the wavelength is the largest in the etching chamber. Therefore, the product with the maximum content in the etching chamber can be directly obtained according to the wavelength-light intensity diagram.
And S20, controlling the temperature in the etching chamber in real time according to the product.
Wherein, a product corresponds to a solid-gas state critical temperature, and the temperature in the etching chamber is monitored in real time according to the difference of the products in the etching chamber.
The embodiment of the invention provides a plasma etching method, which is characterized in that the products in an etching chamber are collected in real time, and the temperature in the etching chamber is monitored in real time according to the products, so that the main products in each stage in the etching chamber can be pumped out of the etching chamber in a gaseous state and cannot be deposited in the etching chamber in a solid state, and therefore, the deposits cannot fall off on the surface of a substrate to be etched, and the yield of the substrate is ensured.
Preferably, the method further comprises:
s30, acquiring a time-light intensity graph corresponding to the preset wavelength, and detecting the etching end point of the film layer corresponding to the preset wavelength according to the time-light intensity graph.
Wherein, the film layer of each material can generate a plurality of products in the etching process, and the time-light intensity diagram of each wavelength as shown in fig. 2 can be acquired and obtained according to the plurality of products. Wherein the abscissa represents etching time in units of s; the ordinate represents intensity, and each curve represents a wavelength. In the debugging process, the wavelength corresponding to the curve with obvious intensity mutation is selected from fig. 2 as the preset wavelength in the etching reaction process. In the etching reaction process, a time-light intensity graph corresponding to the preset wavelength is acquired, and the break point of the light intensity of the preset wavelength is the moment when etching is finished, so that the etching end point of the film layer corresponding to the preset wavelength is detected.
According to the embodiment of the invention, the etching end point can be directly detected by acquiring the time-light intensity diagram corresponding to the preset wavelength without adding a new structure, the distance is simple, and the cost is low.
The following describes a plasma etching method provided by an embodiment of the present invention with reference to specific embodiments:
example one
The present invention provides a plasma etching method, as shown in fig. 3, including:
s100, acquiring a wavelength-light intensity graph from the etching chamber in real time, and obtaining the wavelength with the strongest light intensity in the etching chamber according to the wavelength-light intensity graph.
As shown in fig. 1, in the wavelength-intensity graph at a certain time, the intensity of the wavelength corresponding to the time point E is strongest.
And S200, obtaining a product corresponding to the wavelength with the strongest light intensity.
Wherein, the wavelength and the product are in one-to-one correspondence.
And S300, obtaining the solid-gas critical temperature of the product according to the product.
Wherein, the product and the critical temperature of solid gas are in one-to-one correspondence. According to the product, the solid-gas critical temperature of the product can be obtained by searching a temperature and vapor pressure curve of the product. The solid-gas critical temperature of the product can also be obtained by searching a product-solid-gas critical temperature comparison table which is input in advance.
S400, controlling the temperature of the etching chamber to be equal to the solid-gas critical temperature.
The wavelength with the strongest light intensity changes, the product with the largest content correspondingly changes, the solid-gas critical temperature corresponding to the product changes, and the control temperature of the etching chamber also changes accordingly. And in the etching process, constantly keeping the temperature of the etching chamber equal to the solid-gas critical temperature obtained at each moment.
S500, acquiring a time-light intensity graph corresponding to a preset wavelength, and detecting an etching end point of a film layer corresponding to the preset wavelength according to the time-light intensity graph.
As shown in fig. 4, the time-intensity graph is a time-intensity graph corresponding to a preset wavelength, and the intensity of the wavelength changes abruptly after the etching starts for 33s, so that the film corresponding to the preset wavelength ends after the etching starts for 33 s.
For example, during multi-layer etching, A-Si, photoresist, metal Mo (molybdenum) and A-Si are etched in sequence in the same etching chamber. After the etching of the A-Si is completed, new reaction gas is introduced into the etching chamber, new products are generated by etching, and at the moment, the temperature of the etching chamber needs to be adjusted, so that the new products can be pumped out by a vacuum pump in a gaseous state.
The temperature of the etching chamber is controlled in real time according to different products, so that the temperature in the etching chamber is completely matched with the solid-gas critical temperature of the product with the most components, a new product can be pumped out by a vacuum pump in a gas state, and the phenomenon that a substrate to be etched generates foreign matters is avoided. In addition, the product with the most content is obtained according to the wavelength with the strongest light intensity, and the solid-gas critical temperature of the product can be directly obtained according to the temperature corresponding to the product and a steam pressure curve or a product-solid-gas critical temperature comparison table.
An embodiment of the present invention further provides a plasma etching apparatus, as shown in fig. 5, including: an etching chamber 10, an endpoint detection structure 20, and a temperature control structure 30; the etching chamber 10 is used for etching a substrate to be etched; the end point detection structure 20 is used for acquiring a wavelength-light intensity diagram from the etching chamber 10 in real time, and obtaining a product with the maximum content in the etching chamber 10 according to the wavelength-light intensity diagram; the temperature control structure 30 is used for controlling the temperature in the etching chamber 10 in real time according to the product.
The endpoint detection structure 20 obtains the chemical formula composition of the product with the largest content in the etching chamber 10 by collecting and analyzing the product in the reaction process in the etching chamber 10, and sends the product to the temperature control structure 30 connected with the endpoint detection structure. The temperature control structure 30 regulates and controls the reaction temperature in the etching chamber 10 according to the difference of the products.
The embodiment of the invention provides a plasma etching device, which can ensure that main products in an etching chamber 10 can be pumped out of the etching chamber 10 in a gaseous state and cannot be deposited in the etching chamber 10 in a solid state by collecting the products in the etching chamber 10 in real time and monitoring the temperature in the etching chamber 10 in real time according to the products, so that the deposits cannot fall off on the surface of a substrate to be etched, and the yield of the substrate is ensured.
Preferably, the endpoint detection structure 20 is specifically configured to: acquiring a wavelength-light intensity diagram from the etching chamber 10 in real time; obtaining the wavelength with the strongest light intensity in the etching chamber 10 according to the wavelength-light intensity diagram; and obtaining a product corresponding to the wavelength with the strongest light intensity.
The corresponding table of the products and the wavelengths is input into the endpoint detection structure 20, the endpoint detection structure 20 acquires and obtains a wavelength-light intensity map, analyzes the wavelength with the strongest light intensity, obtains the products with the largest content according to the corresponding table of the products and the wavelengths, and transmits the product signals to the temperature control structure 30.
According to the embodiment of the invention, the product with the largest content is obtained through the end point detection structure 20, the operation is convenient, the principle is simple, and the technology is mature.
Further preferably, the endpoint detection structure 20 is further configured to: acquiring a time-light intensity graph corresponding to a preset wavelength, and detecting the etching end point of the film layer corresponding to the preset wavelength according to the time-light intensity graph.
According to the embodiment of the invention, the etching end point of the film layer is detected by adopting the end point detection structure 20, a new structure is not required to be added, the space is saved, and the cost is reduced.
Preferably, the temperature control structure 30 is specifically configured to: obtaining the solid-gas critical temperature of the product according to the product; the temperature of the etching chamber 10 is controlled to be equal to the solid-gas critical temperature.
Wherein, a temperature and vapor pressure curve of the product or a product-solid gas critical temperature comparison table is input into the temperature control structure 30, the curve or the comparison table is searched to obtain the solid gas critical temperature of the product according to the product conveyed by the end point detection structure 20, and the temperature in the etching chamber 10 is controlled to be equal to the solid gas critical temperature in real time.
In the embodiment of the invention, the solid-gas critical temperature of the product is obtained by adopting the temperature control structure 30, and the temperature of the etching chamber 10 is controlled to be equal to the solid-gas critical temperature, so that real-time monitoring and real-time control are realized, the principle is simple, and the realization is easy.
In view of the above, it is preferable that the end point detecting structure 20 includes: a light intensity collector, an optical fiber, and a controller; the light intensity collector is used for collecting light intensity signals of various wavelengths in the etching chamber 10 and transmitting the light intensity signals to the controller through optical fibers; the controller converts the light intensity signal into a digital signal to obtain a wavelength-light intensity diagram.
The light intensity collector extends into the etching chamber 10 to collect light intensity signals of various wavelengths, the light intensity signals are transmitted to the controller through optical fibers, and the charge-coupled device in the controller performs analog-to-digital conversion on the light intensity signals and converts the light intensity signals into digital signals to obtain a wavelength-light intensity diagram.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A plasma etching method, comprising:
acquiring a wavelength-light intensity diagram from an etching chamber in real time, and obtaining a product with the maximum content in the etching chamber according to the wavelength-light intensity diagram;
and controlling the temperature in the etching chamber in real time according to the product.
2. The plasma etching method according to claim 1, wherein obtaining the product with the largest content in the etching chamber according to the wavelength-light intensity diagram specifically comprises:
obtaining the wavelength with the strongest light intensity in the etching chamber according to the wavelength-light intensity diagram;
and obtaining a product corresponding to the wavelength with the strongest light intensity.
3. The plasma etching method according to claim 2, further comprising:
acquiring a time-light intensity graph corresponding to a preset wavelength, and detecting the etching end point of the film layer corresponding to the preset wavelength according to the time-light intensity graph.
4. The plasma etching method according to claim 1, wherein controlling the temperature in the etching chamber in real time according to the product specifically comprises:
obtaining the solid-gas critical temperature of the product according to the product;
and controlling the temperature of the etching chamber to be equal to the solid-gas critical temperature.
5. The plasma etching method according to claim 4, wherein obtaining the solid-gas critical temperature of the product according to the product specifically comprises:
according to the product, obtaining the solid-gas critical temperature of the product through the temperature and vapor pressure curve of the product; or,
and according to the product, finding a product-solid-gas critical temperature comparison table to obtain the solid-gas critical temperature of the product.
6. A plasma etching apparatus, comprising: the device comprises an etching chamber, an end point detection structure and a temperature control structure;
the etching chamber is used for etching the substrate to be etched;
the end point detection structure is used for acquiring a wavelength-light intensity diagram from the etching chamber in real time and obtaining a product with the maximum content in the etching chamber according to the wavelength-light intensity diagram;
and the temperature control structure is used for controlling the temperature in the etching chamber in real time according to the product.
7. The plasma etching apparatus of claim 6, wherein the endpoint detection structure is specifically configured to:
acquiring a wavelength-light intensity diagram from the etching chamber in real time;
obtaining the wavelength with the strongest light intensity in the etching chamber according to the wavelength-light intensity diagram;
and obtaining a product corresponding to the wavelength with the strongest light intensity.
8. The plasma etching apparatus of claim 7, wherein the endpoint detection structure is further configured to:
acquiring a time-light intensity graph corresponding to a preset wavelength, and detecting the etching end point of the film layer corresponding to the preset wavelength according to the time-light intensity graph.
9. The plasma etching apparatus of claim 6, wherein the temperature control structure is specifically configured to:
obtaining the solid-gas critical temperature of the product according to the product;
and controlling the temperature of the etching chamber to be equal to the solid-gas critical temperature.
10. The plasma etching apparatus according to any one of claims 6 to 9, wherein the end point detecting structure comprises: a light intensity collector, an optical fiber, and a controller;
the light intensity collector is used for collecting light intensity signals of various wavelengths in the etching chamber and transmitting the light intensity signals to the controller through the optical fibers;
and the controller converts the light intensity signal into a digital signal to obtain the wavelength-light intensity diagram.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710002475.8A CN106504971B (en) | 2017-01-03 | 2017-01-03 | A kind of plasma etching method and plasma etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710002475.8A CN106504971B (en) | 2017-01-03 | 2017-01-03 | A kind of plasma etching method and plasma etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106504971A true CN106504971A (en) | 2017-03-15 |
| CN106504971B CN106504971B (en) | 2018-03-16 |
Family
ID=58345062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710002475.8A Active CN106504971B (en) | 2017-01-03 | 2017-01-03 | A kind of plasma etching method and plasma etching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106504971B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029239A (en) * | 2019-12-27 | 2020-04-17 | 上海华力集成电路制造有限公司 | Method for estimating plasma gas temperature in dry etching equipment |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200023A (en) * | 1991-08-30 | 1993-04-06 | International Business Machines Corp. | Infrared thermographic method and apparatus for etch process monitoring and control |
| US20010010255A1 (en) * | 1997-12-15 | 2001-08-02 | Ricoh Company, Ltd. | Dry etching endpoint detection system |
| US20050082482A1 (en) * | 2002-03-20 | 2005-04-21 | Audunn Ludviksson | Process monitoring using infrared optical diagnostics |
| CN1619788A (en) * | 2003-06-18 | 2005-05-25 | 应用材料有限公司 | Method and system for monitoring - etching process |
| CN1812066A (en) * | 2005-01-27 | 2006-08-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and apparatus for detecting polysilicon gate etching terminal |
| US20060261036A1 (en) * | 2005-04-11 | 2006-11-23 | Stmicroelectronics S.R.L. | Method for patterning on a wafer having at least one substrate for the realization of an integrated circuit |
| CN101128910A (en) * | 2005-01-18 | 2008-02-20 | 点35微结构有限公司 | Improved method and apparatus for monitoring a microstructure etching process |
| CN101572219A (en) * | 2008-04-29 | 2009-11-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | System and method for monitoring cavity state and semiconductor treatment equipment |
| CN104078398A (en) * | 2014-07-25 | 2014-10-01 | 上海华力微电子有限公司 | Wafer purifying chamber for improving defect of coagulation of etching by-products |
| CN104091758A (en) * | 2014-07-25 | 2014-10-08 | 上海华力微电子有限公司 | Method for improving microenvironment of surface of wafer after etching of through hole |
| CN104183514A (en) * | 2013-05-22 | 2014-12-03 | 中微半导体设备(上海)有限公司 | System for improving TSV etching process and etching endpoint monitoring method |
| CN104733336A (en) * | 2013-12-19 | 2015-06-24 | 中微半导体设备(上海)有限公司 | Ending detection system and method used in plasma photoresist stripping process |
| CN105336563A (en) * | 2014-07-24 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Etching apparatus and etching method |
-
2017
- 2017-01-03 CN CN201710002475.8A patent/CN106504971B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200023A (en) * | 1991-08-30 | 1993-04-06 | International Business Machines Corp. | Infrared thermographic method and apparatus for etch process monitoring and control |
| US20010010255A1 (en) * | 1997-12-15 | 2001-08-02 | Ricoh Company, Ltd. | Dry etching endpoint detection system |
| US20050082482A1 (en) * | 2002-03-20 | 2005-04-21 | Audunn Ludviksson | Process monitoring using infrared optical diagnostics |
| CN1619788A (en) * | 2003-06-18 | 2005-05-25 | 应用材料有限公司 | Method and system for monitoring - etching process |
| CN101128910A (en) * | 2005-01-18 | 2008-02-20 | 点35微结构有限公司 | Improved method and apparatus for monitoring a microstructure etching process |
| CN1812066A (en) * | 2005-01-27 | 2006-08-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and apparatus for detecting polysilicon gate etching terminal |
| US20060261036A1 (en) * | 2005-04-11 | 2006-11-23 | Stmicroelectronics S.R.L. | Method for patterning on a wafer having at least one substrate for the realization of an integrated circuit |
| CN101572219A (en) * | 2008-04-29 | 2009-11-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | System and method for monitoring cavity state and semiconductor treatment equipment |
| CN104183514A (en) * | 2013-05-22 | 2014-12-03 | 中微半导体设备(上海)有限公司 | System for improving TSV etching process and etching endpoint monitoring method |
| CN104733336A (en) * | 2013-12-19 | 2015-06-24 | 中微半导体设备(上海)有限公司 | Ending detection system and method used in plasma photoresist stripping process |
| CN105336563A (en) * | 2014-07-24 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Etching apparatus and etching method |
| CN104078398A (en) * | 2014-07-25 | 2014-10-01 | 上海华力微电子有限公司 | Wafer purifying chamber for improving defect of coagulation of etching by-products |
| CN104091758A (en) * | 2014-07-25 | 2014-10-08 | 上海华力微电子有限公司 | Method for improving microenvironment of surface of wafer after etching of through hole |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029239A (en) * | 2019-12-27 | 2020-04-17 | 上海华力集成电路制造有限公司 | Method for estimating plasma gas temperature in dry etching equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106504971B (en) | 2018-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100304288B1 (en) | Method and apparatus for end point detection of plasma processing | |
| KR100365841B1 (en) | Method of detecting end point of plasma processing and apparatus for the same | |
| TWI518525B (en) | Method of endpoint detection of plasma etching process using multivariate analysis | |
| CN102473593A (en) | Abnormality detection system, abnormality detection method, and recording medium | |
| TW201930863A (en) | In-situ chamber clean end point detection systems and methods using computer vision systems | |
| KR100407025B1 (en) | Apparatus and method for detecting an end point of a cleaning process | |
| US20160351405A1 (en) | Plasma processing apparatus and plasma processing method | |
| CN101145499A (en) | On-line predication method for maintaining etching apparatus | |
| KR20220047281A (en) | Synthetic wavelength for endpoint detection in plasma etching | |
| CN106504971B (en) | A kind of plasma etching method and plasma etching device | |
| TW202201001A (en) | Capacitive sensing data integration for plasma chamber condition monitoring | |
| TW201508852A (en) | System to improve the TSV etching process and etching endpoint monitoring method | |
| KR101843443B1 (en) | plasma equipment and maintenance method of the same | |
| JP6557642B2 (en) | Plasma processing apparatus and plasma processing method | |
| JP5778893B2 (en) | End point detection apparatus, plasma processing apparatus, and end point detection method | |
| TW201314753A (en) | End point monitoring method for plasma etching process | |
| JP2004235349A (en) | Plasma processing apparatus and processing method | |
| JP2018014403A (en) | Plasma processing apparatus and analysis method for analyzing plasma processing data | |
| CN103903951A (en) | Feedback control method and system for plasma system | |
| KR20020034826A (en) | Control apparatus for plasma utilizing equipment | |
| CN1675406B (en) | Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission | |
| CN107546141B (en) | Apparatus and method for monitoring plasma process | |
| CN101598951B (en) | Adjustable glow monitoring system of glow equipment | |
| TWI640031B (en) | Plasma processing device and method for monitoring plasma process | |
| CN108538743A (en) | Semiconductor processing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |