CN106504899A - A kind of array dye sensilized solaode - Google Patents
A kind of array dye sensilized solaode Download PDFInfo
- Publication number
- CN106504899A CN106504899A CN201510561318.1A CN201510561318A CN106504899A CN 106504899 A CN106504899 A CN 106504899A CN 201510561318 A CN201510561318 A CN 201510561318A CN 106504899 A CN106504899 A CN 106504899A
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- China
- Prior art keywords
- electrode
- semi
- conducting material
- solaode
- dye
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- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000000126 substance Substances 0.000 claims abstract description 20
- 239000003792 electrolyte Substances 0.000 claims abstract description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 230000001235 sensitizing effect Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 7
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 7
- 239000002070 nanowire Substances 0.000 claims abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 3
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000012546 transfer Methods 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 abstract description 3
- 230000009466 transformation Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of array dye sensilized solaode, whole battery by transparent outer cover, photoelectric chemical electrode, to electrode, platinum thin layer, dye sensitizing agent, electrolyte, semi-conducting material, cell cathode, galvanic anode, electrode supporting constituted.Its anode semi-conducting material is nanoscale wire, taper or inverted pyramid groove-like monocrystalline or the polycrystalline metal oxide semi-conducting material arranged in regular shape, the crystalline semiconductor materials of this array are arranged vertically in quasiconductor conductive material surface, the transfer rate that solves light induced electron in particulate semiconductor material is low, the low shortcoming of electricity conversion, simultaneously, as the semi-conducting material is monocrystalline or polycrystalline material, the transfer rate of light induced electron is improve to greatest extent, electric loss of energy is reduced, the photoelectric transformation efficiency of solaode is finally improved.
Description
Technical field
A kind of array dye sensilized solaode of the present invention, refers to solar energy generation technology field.
Background technology
With the development and the increase of population of World Economics, the demand to the energy is increasing.This device that can be converted solar energy into electrical energy of solaode becomes the focus of numerous researcher researchs.At present, using crystallization or the silicon solar cell of non-crystalline silicon, or just warmly pursued using the R and D of the compound semiconductor solaode of gallium, arsenic etc., but, the complex process of this kind of solar energy of manufacture, expensive, limit which and extensively apply.Gr tzel professors of Lausanne, SUI Gao Deng engineering institutes et al. first proposed the concept of DSSC in 1991, this solaode does not need silicon to make raw material, and low cost, processing technology are simple, electricity conversion is high, are well suited as follow-on photoelectric conversion device.DSSC is by photoelectric chemical electrode（Also referred to as anode）, electrolyte（Dissolving redox couple）, to three part of electrode constitute.Wherein photoelectric chemical electrode is usually and semi-conducting material is attached on conductive electrode.The semi-conducting material of the photoelectric chemical electrode of existing DSSC typically being decomposed to form by presoma.Loose structure can be produced in the catabolic process of presoma, this has resulted in a large amount of defects and dislocation in material, the transfer rate of light induced electron is affected, can additionally be reduced effective specific surface area, be affected the diffusion of redox couple, be unfavorable for conversion of the luminous energy to electric energy.
Content of the invention
It is an object of the invention to provide a kind of array dye sensilized solaode, its electrode material is in regularly arranged monocrystalline or poly semiconductor array, with the orderly electrons spread passage of formation rule, strengthens photoelectric transformation efficiency.
Its technology be achieved in that including transparent outer cover, photoelectric chemical electrode, to electrode, platinum thin layer, dye sensitizing agent, electrolyte, semi-conducting material, cell cathode, galvanic anode, to electrode supporting, it is characterised in that：Whole cell sealing is in transparent outer cover, bottom in transparent outer cover is provided with photoelectric chemical electrode, one end of photoelectric chemical electrode is connected with galvanic anode, it is semi-conducting material on photochemistry electrode, described semi-conducting material is nanoscale wire in the arrangement of regular shape, taper or inverted pyramid groove-like monocrystalline or polycrystalline metal oxide semi-conducting material, such as TiO2、SnO2, ZnO etc., one layer of dye sensitizing agent thin layer of surface attachment, four are fixed with to electrode supporting at four angles of photoelectric chemical electrode, to installing above electrode supporting to electrode, one layer of platinum thin layer is coated with to electrode lower surface, electrode one end is connected with cell cathode, to being full of electrolyte in the enclosure cavity between electrode and photoelectric chemical electrode, described electrolyte generally contains I-And I2Electrolyte.
The invention has benefit that, by using above-mentioned three kinds of regularly arranged semi-conducting materials, compared with prior art, the luminous energy being irradiated in dye sensitization can be fully absorbed, it is to avoid the waste of luminous energy.Simultaneously as the semi-conducting material is monocrystalline（Polycrystalline）, improve the transfer rate of light induced electron to greatest extent, reduce electric loss of energy, finally improve the photoelectric transformation efficiency of solaode.
Description of the drawings
Front view structure generalized sections of the Fig. 1 for DSSC.
Overlooking the structure diagrams of the Fig. 2 for DSSC.
Fig. 3 is dye sensitized solar battery anode array schematic diagram.
Wherein, to electrode, 2- electrolyte, 3- is to electrode supporting, 4- photoelectric chemical electrodes, 5- transparent outer covers, 6- galvanic anodes, 7- semi-conducting materials, 8- dye sensitizing agents, 9- platinum thin layers, 10- cell cathodes for 1-.
Specific embodiment
Below in conjunction with specific embodiment, the invention will be further described.
See accompanying drawing 1, 2, shown in 3, whole cell sealing is simultaneously fixed in transparent outer cover 5, bottom in transparent outer cover 5 is provided with photoelectric chemical electrode 4, one end of photoelectric chemical electrode 4 is connected with galvanic anode 6, it is semi-conducting material 7 on photochemistry electrode 4, semi-conducting material 7 surface attachment, one layer of dye sensitizing agent 8, four are fixed with to electrode supporting 3 at four angles of photoelectric chemical electrode 4, to installing above electrode supporting 3 to electrode 1, one layer of platinum thin layer 9 is coated with to 1 lower surface of electrode, 1 one end of electrode is connected with cell cathode 10, to being full of electrolyte 2 in the enclosure cavity between electrode 1 and photoelectric chemical electrode 4, described electrolyte 2 is generally the electrolyte containing I- and I2.
Described semi-conducting material 7, can have three kinds of forms：Cone structure, inverted pyramid groove-like structure and linear structure.
1. cone structure, the taper semi-conducting material are monocrystalline（Or polycrystalline）State, epitaxial growth can be passed through and photoetching technique is realized, one layer of monocrystalline or polycrystalline semiconductor material are grown on conductive material by the growth technology of thin film first, then by the array-like patterned mask of photoetching technique formation rule, finally by anisotropic lithographic technique, pyramid shape protrusion is formed.
2. inverted pyramid groove-like structure, the inverted pyramid groove-like semi-conducting material is also monocrystalline（Or polycrystalline）State, epitaxial growth can also be passed through and photoetching technique is realized, one layer of monocrystalline or polycrystalline semiconductor material are grown on conductive material by the growth technology of thin film first, then the mask with above-mentioned pattern complementary is formed by photoetching technique, finally by anisotropic lithographic technique, inverted pyramid shape groove is formed.
3. linear structure, the wire semi-conducting material are monocrystalline（Or polycrystalline）Nanometer or micro wire, can be prepared by the growing method of nano wire or micro wire, such as chemical vapour deposition technique, thermal evaporation, hydro-thermal method etc..
See accompanying drawing 1,2,3, first, when there is sunlight, dye sensitizing agent 8 is excited to excited state by ground state, by in the conduction band of electron injection semi-conducting material 7, the electrons spread in 7 conduction band of semi-conducting material flows into external circuit to photoelectric chemical electrode 4 to dye sensitizing agent 8 in excited state；Then, by 2 reducing/regenerating of electrolyte, the electrolyte 2 of oxidation state to electrode 1 receives electronics and is reduced the dye sensitizing agent 8 of oxidation state, and so, during open circuit, two-stage produces light potential, closed circuit then in the corresponding photoelectric current of external circuit generation through loading, and realizes generating electricity.
Claims (2)
1. a kind of array dye sensilized solaode, including transparent outer cover, photoelectric chemical electrode, to electrode, platinum thin layer, dye sensitizing agent, electrolyte, semi-conducting material, cell cathode, galvanic anode, to electrode supporting, it is characterised in that：Whole cell sealing is simultaneously fixed in transparent outer cover, bottom in transparent outer cover is provided with photoelectric chemical electrode, one end of photoelectric chemical electrode is connected with galvanic anode, it is semi-conducting material on photochemistry electrode, semiconductor material surface adheres to one layer of dye sensitizing agent, four are fixed with to electrode supporting at four angles of photoelectric chemical electrode, to installing above electrode supporting to electrode, one layer of platinum thin layer is coated with to electrode lower surface, electrode one end is connected with cell cathode, to being full of electrolyte in the enclosure cavity between electrode and photoelectric chemical electrode.
2. a kind of array dye sensilized solaode according to claim 1, it is characterized in that described semi-conducting material is nanoscale wire, taper or inverted pyramid groove-like monocrystalline or the polycrystalline metal oxide semi-conducting material arranged in regular shape, including but not limited to TiO2、SnO2、ZnO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510561318.1A CN106504899A (en) | 2015-09-07 | 2015-09-07 | A kind of array dye sensilized solaode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510561318.1A CN106504899A (en) | 2015-09-07 | 2015-09-07 | A kind of array dye sensilized solaode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106504899A true CN106504899A (en) | 2017-03-15 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510561318.1A Pending CN106504899A (en) | 2015-09-07 | 2015-09-07 | A kind of array dye sensilized solaode |
Country Status (1)
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| CN (1) | CN106504899A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040163700A1 (en) * | 2003-01-15 | 2004-08-26 | Nippon Shokubai Co., Ltd. | Dye-sensitized type solar cell |
| US20060065301A1 (en) * | 2004-09-30 | 2006-03-30 | Enplas Corporation | Photoelectrode for dye sensitizing solar cell or organic solar cell, and dye sensitizing solar cell having same |
| CN1815759A (en) * | 2005-12-13 | 2006-08-09 | 中山大学 | Ordered nano semiconductor array dye sensilized solar cell |
| CN102005301A (en) * | 2010-11-29 | 2011-04-06 | 华东师范大学 | Dye sensitized solar cell and preparation method thereof |
| US20110232759A1 (en) * | 2010-03-29 | 2011-09-29 | Tao Xu | Highly efficient dye-sensitized solar cells using microtextured electron collecting anode and nanoporous and interdigitated hole collecting cathode and method for making same |
| JP2012134451A (en) * | 2010-12-01 | 2012-07-12 | Ntt Facilities Sogo Kenkyusho:Kk | Solar cell unit |
-
2015
- 2015-09-07 CN CN201510561318.1A patent/CN106504899A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040163700A1 (en) * | 2003-01-15 | 2004-08-26 | Nippon Shokubai Co., Ltd. | Dye-sensitized type solar cell |
| US20060065301A1 (en) * | 2004-09-30 | 2006-03-30 | Enplas Corporation | Photoelectrode for dye sensitizing solar cell or organic solar cell, and dye sensitizing solar cell having same |
| CN1815759A (en) * | 2005-12-13 | 2006-08-09 | 中山大学 | Ordered nano semiconductor array dye sensilized solar cell |
| US20110232759A1 (en) * | 2010-03-29 | 2011-09-29 | Tao Xu | Highly efficient dye-sensitized solar cells using microtextured electron collecting anode and nanoporous and interdigitated hole collecting cathode and method for making same |
| CN102005301A (en) * | 2010-11-29 | 2011-04-06 | 华东师范大学 | Dye sensitized solar cell and preparation method thereof |
| JP2012134451A (en) * | 2010-12-01 | 2012-07-12 | Ntt Facilities Sogo Kenkyusho:Kk | Solar cell unit |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170315 |
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