CN106495091A - The processing method of diaphragm under resonant silicon microsensor - Google Patents
The processing method of diaphragm under resonant silicon microsensor Download PDFInfo
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- CN106495091A CN106495091A CN201611043129.6A CN201611043129A CN106495091A CN 106495091 A CN106495091 A CN 106495091A CN 201611043129 A CN201611043129 A CN 201611043129A CN 106495091 A CN106495091 A CN 106495091A
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- silicon
- layer
- monocrystalline
- diaphragm
- film
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 230000003628 erosive effect Effects 0.000 claims abstract description 7
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- 239000000243 solution Substances 0.000 claims abstract description 7
- 239000007864 aqueous solution Substances 0.000 claims abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 238000005260 corrosion Methods 0.000 claims abstract description 4
- 230000007797 corrosion Effects 0.000 claims abstract description 4
- 238000005498 polishing Methods 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims abstract description 4
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 4
- 238000001020 plasma etching Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000003754 machining Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 7
- 238000010923 batch production Methods 0.000 description 3
- 238000005459 micromachining Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Under resonant silicon microsensor of the present invention, the processing method of diaphragm is related to sensor field, and in particular to the processing method of diaphragm under resonant silicon microsensor, comprises the following steps：The N-type silicon wafer of twin polishing is chosen, resistivity is 0.1 1Q cm, and thickness is 2mm, the thick SiO of one layer of 1um of thermal oxide growth2, then using low-pressure chemical vapor phase deposition or plasma-reinforced chemical vapor deposition in the thick Si of one layer of 1um of two-sided deposit of monocrystalline silicon piece3N4Film；One layer of photoresist is coated on the silicon nitride film at the monocrystalline silicon piece back side, figure is generated using photoetching process, output etching mask window, then, temperature be 85 DEG C, in the middle of the KOH aqueous solution containing 30%, carry out monocrystalline anisotropic silicon pre-etching, etching time is 12 hours, then uses the relatively low S type EDP solution of corrosion rate instead, and temperature is less than 115 DEG C, anisotropic etch is carried out, diaphragm stops by eroding to required thickness；Compatibility of the invention is good and high in machining efficiency, is conducive to the reliability for improving sensor, reduces production cost, can be mass.
Description
Technical field
The present invention relates to sensor field, and in particular to the processing method of diaphragm under resonant silicon microsensor.
Background technology
Silicon resonance type microsensor is exported with frequency quantity, and with excellent repeatability, resolution ratio, stability, small volume,
Low in energy consumption, it is easy to the features such as integrated, to be just more and more taken seriously.Home and abroad competitively expands the research work of correlation.With
Integrated circuit processing technology and the development of silicon micromachining technique, and the application in the sensor of these technology is more and more wider
General, in recent years, with monocrystalline silicon as base material, various processing technologys are have developed, including surface micro
Process technology or bulk silicon micro mechanic process technology, silicon-on-insulator technique, the reverse micromachining technology of silicon and monocrystalline pasc reaction
Ion etching and metallization process.The microstructure resonance formula sensor that not isotonic oscillator be may be made with using these techniques.With
When silicon micro-sensor miromaching and silicon integrated circuit technique have good compatibility, it is possible to achieve silicon micro-sensor
Integrated with modulate circuit, so as to realize the miniaturization of sensor, be conducive to improving the uniformity of sensor and its system and can
By property, and reduces cost is also beneficial to, realizes batch production.
The sensitive structure of silicon microstructure resonance type pressure sensor, total by square diaphragm, beam harmonic oscillator, vacuum (-tight) housing and
Border isolation part grades composition.Its operation principle is：Using square silicon diaphragm as a sensing element, direct feeling is by pressure measurement
Power.Shallow slot and silicon beam are processed in the upper surface of diaphragm, using silicon beam as final sensing unit, impression is by measuring pressure indirectly.Outward
The effect of boundary pressure P makes silicon diaphragm upper surface produce corresponding strain field, stress field, and then be converted into two clamped ends of silicon beam
Axial force, so as to the change with ambient pressure is changed by the intrinsic frequency of beam.By detecting the change of resonance silicon beam intrinsic frequency
Change, you can measure the change of ambient pressure.
Content of the invention
Present invention aim at providing, a kind of compatibility is good and high in machining efficiency, be conducive to the reliability for improving sensor,
Reduce production cost, the processing method of diaphragm under the resonant silicon microsensor that can be mass.
Under resonant silicon microsensor of the present invention, the processing method of diaphragm, comprises the following steps：
The first step, chooses the N-type silicon wafer of twin polishing, and resistivity is 0.1-1Q cm, and thickness is 2mm, thermal oxide growth one
The thick SiO of layer 1um2, then using low-pressure chemical vapor phase deposition or plasma-reinforced chemical vapor deposition in monocrystalline silicon piece
The thick Si of one layer of 1um of two-sided deposit3N4Film；
Second step, coats one layer of photoresist on the silicon nitride film at the monocrystalline silicon piece back side, generates figure using photoetching process, open
Go out etching mask window, then, be 85 DEG C, in the middle of the KOH aqueous solution containing 30%, carry out the pre- corruption of monocrystalline anisotropic silicon in temperature
Erosion, etching time are 12 hours, then use the relatively low S type EDP solution of corrosion rate instead, and temperature is less than 115 DEG C, carry out each to
Anisotropic etch, diaphragm stop by eroding to required thickness；
3rd step, in the Si in monocrystalline substrate front3N4One layer of photoresist of film applied atop, generates figure using photoetching process
Shape, outputs etching mask window, carries out reactive ion etching, corrodes and Si3N4And SiO2After layer, continue down to corrode monocrystalline
Silicon substrate, the length of side for 1.8mm until corroding, shallow hole of the thickness up to 2um；
4th step, removes SiO using BHF acid solutions2Film layer and photoresist, then using reactive ion etching by Si3N4Film
Layer is removed, and then, monocrystalline silicon village bottom is chemically-mechanicapolish polished.
Compatibility of the invention is good and high in machining efficiency, is conducive to the reliability for improving sensor, reduces production cost, can
Batch production.
Specific embodiment
Under resonant silicon microsensor of the present invention, the processing method of diaphragm, comprises the following steps：
The first step, chooses the N-type silicon wafer of twin polishing, and resistivity is 0.1-1Q cm, and thickness is 2mm, thermal oxide growth one
The thick SiO of layer 1um2, then using low-pressure chemical vapor phase deposition or plasma-reinforced chemical vapor deposition in monocrystalline silicon piece
The thick Si of one layer of 1um of two-sided deposit3N4Film；
Second step, coats one layer of photoresist on the silicon nitride film at the monocrystalline silicon piece back side, generates figure using photoetching process, open
Go out etching mask window, then, be 85 DEG C, in the middle of the KOH aqueous solution containing 30%, carry out the pre- corruption of monocrystalline anisotropic silicon in temperature
Erosion, etching time are 12 hours, then use the relatively low S type EDP solution of corrosion rate instead, and temperature is less than 115 DEG C, carry out each to
Anisotropic etch, diaphragm stop by eroding to required thickness；
3rd step, in the Si in monocrystalline substrate front3N4One layer of photoresist of film applied atop, generates figure using photoetching process
Shape, outputs etching mask window, carries out reactive ion etching, corrodes and Si3N4And SiO2After layer, continue down to corrode monocrystalline
Silicon substrate, the length of side for 1.8mm until corroding, shallow hole of the thickness up to 2um；
4th step, removes SiO using BHF acid solutions2Film layer and photoresist, then using reactive ion etching by Si3N4Film
Layer is removed, and then, monocrystalline silicon village bottom is chemically-mechanicapolish polished.
Compatibility of the invention is good and high in machining efficiency, is conducive to the reliability for improving sensor, reduces production cost, can
Batch production.
Claims (1)
1. under a kind of resonant silicon microsensor diaphragm processing method, it is characterised in that comprise the following steps：
The first step, chooses the N-type silicon wafer of twin polishing, and resistivity is 0.1-1Q cm, and thickness is 2mm, thermal oxide growth one
The thick SiO of layer 1um2, then using low-pressure chemical vapor phase deposition or plasma-reinforced chemical vapor deposition in monocrystalline silicon piece
The thick Si of one layer of 1um of two-sided deposit3N4Film；
Second step, coats one layer of photoresist on the silicon nitride film at the monocrystalline silicon piece back side, generates figure using photoetching process, open
Go out etching mask window, then, be 85 DEG C, in the middle of the KOH aqueous solution containing 30%, carry out the pre- corruption of monocrystalline anisotropic silicon in temperature
Erosion, etching time are 12 hours, then use the relatively low S type EDP solution of corrosion rate instead, and temperature is less than 115 DEG C, carry out each to
Anisotropic etch, diaphragm stop by eroding to required thickness；
3rd step, in the Si in monocrystalline substrate front3N4One layer of photoresist of film applied atop, generates figure using photoetching process,
Etching mask window is outputed, reactive ion etching is carried out, is corroded and Si3N4And SiO2After layer, continue down to corrode monocrystalline silicon lining
Bottom, the length of side for 1.8mm until corroding, shallow hole of the thickness up to 2um；
4th step, removes SiO using BHF acid solutions2Film layer and photoresist, then using reactive ion etching by Si3N4Film
Layer is removed, and then, monocrystalline silicon village bottom is chemically-mechanicapolish polished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611043129.6A CN106495091A (en) | 2016-11-24 | 2016-11-24 | The processing method of diaphragm under resonant silicon microsensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611043129.6A CN106495091A (en) | 2016-11-24 | 2016-11-24 | The processing method of diaphragm under resonant silicon microsensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106495091A true CN106495091A (en) | 2017-03-15 |
Family
ID=58328201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611043129.6A Pending CN106495091A (en) | 2016-11-24 | 2016-11-24 | The processing method of diaphragm under resonant silicon microsensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106495091A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108931321A (en) * | 2018-06-21 | 2018-12-04 | 中国计量大学 | Beam-island-film integration resonant mode pressure sensor structure and manufacturing method |
-
2016
- 2016-11-24 CN CN201611043129.6A patent/CN106495091A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108931321A (en) * | 2018-06-21 | 2018-12-04 | 中国计量大学 | Beam-island-film integration resonant mode pressure sensor structure and manufacturing method |
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| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170315 |
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| WD01 | Invention patent application deemed withdrawn after publication |