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CN106463387A - Cleaning method and cleaning device using micro/nano-bubbles - Google Patents

Cleaning method and cleaning device using micro/nano-bubbles Download PDF

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Publication number
CN106463387A
CN106463387A CN201580033097.9A CN201580033097A CN106463387A CN 106463387 A CN106463387 A CN 106463387A CN 201580033097 A CN201580033097 A CN 201580033097A CN 106463387 A CN106463387 A CN 106463387A
Authority
CN
China
Prior art keywords
mentioned
nano bubble
gas
miniature
miniature nano
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201580033097.9A
Other languages
Chinese (zh)
Other versions
CN106463387B (en
Inventor
橘良昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Higuma Technology Co.,Ltd.
Original Assignee
Sigma Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sigma Tech Inc filed Critical Sigma Tech Inc
Publication of CN106463387A publication Critical patent/CN106463387A/en
Application granted granted Critical
Publication of CN106463387B publication Critical patent/CN106463387B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
    • B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
    • B05B13/0221—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts
    • B05B13/0228—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts the movement of the objects being rotative
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F21/00—Dissolving
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F21/00—Dissolving
    • B01F21/02—Methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/20—Mixing gases with liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/20—Mixing gases with liquids
    • B01F23/21—Mixing gases with liquids by introducing liquids into gaseous media
    • B01F23/213—Mixing gases with liquids by introducing liquids into gaseous media by spraying or atomising of the liquids
    • B01F23/2132—Mixing gases with liquids by introducing liquids into gaseous media by spraying or atomising of the liquids using nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/20—Jet mixers, i.e. mixers using high-speed fluid streams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/20—Jet mixers, i.e. mixers using high-speed fluid streams
    • B01F25/21—Jet mixers, i.e. mixers using high-speed fluid streams with submerged injectors, e.g. nozzles, for injecting high-pressure jets into a large volume or into mixing chambers
    • B01F25/212—Jet mixers, i.e. mixers using high-speed fluid streams with submerged injectors, e.g. nozzles, for injecting high-pressure jets into a large volume or into mixing chambers the injectors being movable, e.g. rotating
    • B01F25/2122—Rotating during jetting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/90—Heating or cooling systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/26—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with means for mechanically breaking-up or deflecting the jet after discharge, e.g. with fixed deflectors; Breaking-up the discharged liquid or other fluent material by impinging jets
    • B05B1/262—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with means for mechanically breaking-up or deflecting the jet after discharge, e.g. with fixed deflectors; Breaking-up the discharged liquid or other fluent material by impinging jets with fixed deflectors
    • B05B1/265—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with means for mechanically breaking-up or deflecting the jet after discharge, e.g. with fixed deflectors; Breaking-up the discharged liquid or other fluent material by impinging jets with fixed deflectors the liquid or other fluent material being symmetrically deflected about the axis of the nozzle
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
    • B05B7/166—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the material to be sprayed being heated in a container
    • B05B7/1666—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the material to be sprayed being heated in a container fixed to the discharge device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/24—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas with means, e.g. a container, for supplying liquid or other fluent material to a discharge device
    • B05B7/26—Apparatus in which liquids or other fluent materials from different sources are brought together before entering the discharge device
    • B05B7/28—Apparatus in which liquids or other fluent materials from different sources are brought together before entering the discharge device in which one liquid or other fluent material is fed or drawn through an orifice into a stream of a carrying fluid
    • B05B7/32—Apparatus in which liquids or other fluent materials from different sources are brought together before entering the discharge device in which one liquid or other fluent material is fed or drawn through an orifice into a stream of a carrying fluid the fed liquid or other fluent material being under pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/065—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of foam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/263—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer having non-uniform thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
    • B32B5/022—Non-woven fabric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
    • B32B5/024—Woven fabric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
    • B32B5/028—Net structure, e.g. spaced apart filaments bonded at the crossing points
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/18—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer of foamed material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/22—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
    • B32B5/24—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
    • B32B5/245—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it being a foam layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60N—SEATS SPECIALLY ADAPTED FOR VEHICLES; VEHICLE PASSENGER ACCOMMODATION NOT OTHERWISE PROVIDED FOR
    • B60N2/00—Seats specially adapted for vehicles; Arrangement or mounting of seats in vehicles
    • B60N2/58—Seat coverings
    • B60N2/5891—Seat coverings characterised by the manufacturing process; manufacturing seat coverings not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60N—SEATS SPECIALLY ADAPTED FOR VEHICLES; VEHICLE PASSENGER ACCOMMODATION NOT OTHERWISE PROVIDED FOR
    • B60N2/00—Seats specially adapted for vehicles; Arrangement or mounting of seats in vehicles
    • B60N2/64—Back-rests or cushions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/428—Stripping or agents therefor using ultrasonic means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0331—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B16/00—Spray booths
    • B05B16/60—Ventilation arrangements specially adapted therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
    • B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
    • B05B5/0255—Discharge apparatus, e.g. electrostatic spray guns spraying and depositing by electrostatic forces only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
    • B05B5/08—Plant for applying liquids or other fluent materials to objects
    • B05B5/082—Plant for applying liquids or other fluent materials to objects characterised by means for supporting, holding or conveying the objects
    • B05B5/084—Plant for applying liquids or other fluent materials to objects characterised by means for supporting, holding or conveying the objects the objects lying on, or being supported above conveying means, e.g. conveyor belts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
    • B05B7/166—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the material to be sprayed being heated in a container
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
    • B05B7/1693—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed with means for heating the material to be sprayed or an atomizing fluid in a supply hose or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
    • B32B2262/02—Synthetic macromolecular fibres
    • B32B2262/0253—Polyolefin fibres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
    • B32B2262/02—Synthetic macromolecular fibres
    • B32B2262/0261—Polyamide fibres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
    • B32B2262/02—Synthetic macromolecular fibres
    • B32B2262/0276—Polyester fibres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
    • B32B2262/14—Mixture of at least two fibres made of different materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2266/00—Composition of foam
    • B32B2266/02—Organic
    • B32B2266/0214—Materials belonging to B32B27/00
    • B32B2266/0278—Polyurethane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/54—Yield strength; Tensile strength
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/56—Damping, energy absorption
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/72—Density
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/72—Density
    • B32B2307/722—Non-uniform density
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2605/00—Vehicles
    • B32B2605/003—Interior finishings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2605/00—Vehicles
    • B32B2605/08—Cars

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Abstract

Provided are a cleaning method and cleaning device for cleaning with micro/nano-bubbles, with which a simple method of spraying a treatment solution containing micro/nano-bubbles onto a substrate to be processed makes it possible to efficiently and reliably peel off residual resist or remove contaminants from the substrate, while reducing an environmental load. This cleaning method is characterized in that, with respect to a substrate to be treated to which a resist film has adhered onto the substrate or a substrate to be treated to which the surface thereof has been contaminated with a metal or metal compounds, the resist film is peeled off or the metal or metal compounds are removed by spraying onto the substrate to be treated a treatment solution containing micro/nano-bubbles of gas and having a temperature maintained at 30 DEG C to 90 DEG C, the mean particle size of the micro/nano-bubbles when measured by an ice embedding method using a cryo-transmission electron microscope being 100 nm or lower, preferably 30 nm or lower, and also preferably the density of such bubbles being 108 or more bubbles per 1 ml.

Description

Cleaning method and cleaning device using miniature nano bubble
Technical field
The present invention relates to the treatment fluid of the miniature nano bubble by comprising the gas in below 100nm for the average grain diameter, Peel off or remove attachment and residue in glass substrate, the etchant resist on the substrate of semiconductor wafer etc. or metal or metallic compound Deng the cleaning method using miniature nano bubble of pollutant and cleaning device.
Background technology
For miniature nano bubble, as described in non-patent literature 1, there is (a) bubble system little；On (b) Lifting speed is slow；C () reduces frictional resistance；D the pressure in () bubble is high；E () gas-liquid interface is big；F the meltage of () gas is big； G () is accompanied by dissolving, shrinks；And (h) bubble surface carries negative electricity, the various feature waiting, thus, people expect to utilize this The application in the extensive field of amplitude of the food of a little features, cosmetics, medicine, semiconductor cleaning, plant cultivation etc..People know Road, because for miniature nano bubble, its particle diameter is less, buoyancy is compared with viscous force, more very little, therefore not floating In above, can in a liquid, in the state of ultra-fine microbubble and long-term existence, in addition the sphere diameter of bubble is very little, comprises nanometer The liquid of bubble cannot confirm by visual observation, and it is water white.
In order to there is miniature nano bubble, being roughly divided into and being flowed and the method that makes gas companion by making liquid, with The method being blown into gas in the state of liquid is static.Specifically, as described in above-mentioned non-patent literature 1, people Propose there is convolution liquid flow type；Static hybrid；Venturi type；Pressure dissolution type；The various miniature nanometer gas of pore formula etc. Bubble method for generation.
Because, as aforementioned, miniature nano bubble has the feature not having in the past, therefore in recent years, people inquire into following Cleaning method be suitable for, this cleaning method residues in glass substrate for attachment, the etchant resist on the substrate of semiconductor wafer etc. Stripping, or the removal (such as, with reference to patent document 1) of the pollutant of metal or metallic compound etc..In above-mentioned patent document 1 Described in invention be following methods, wherein, as the first strip step, with 40～60 DEG C of low temperature, receive to being mixed with First stripper L1 of rice bubble is heated, and the degree do not damaged by pressure with nano bubble is fed to substrate, is thus maintaining Relatively after the high impregnability of etchant resist, as the second strip step, the plus-pressure of the second stripper L2 of high-pressure pump is used for Damaging by pressure of the nano bubble comprising in first stripper L1, thus, carries out the stripping of etchant resist.
In addition, as in order to peel off the metal film on etchant resist when making semiconductor device and the stripping means that carries out or The substitute mode of the engraving method of etchant resist, it has been proposed that there being following methods, wherein, will wrap micro bubbles ozoniferous or miniature The pure water of nano bubble is ejected on substrate (with reference to patent document 2 and 3).In addition, the present inventor etc. are also in patent document 4 In, develop new method and its device, propose being suitable for of the cleaning of cleaning of semiconductor wafer etc., this new method and its In device, by high pressure liquor charging, gas and liquid mixture is pressurizeed, by water slug method, be effectively formed substantial amounts of miniature Nano bubble.
Prior art document
Patent document
Patent document 1：2009 No. 129976 publications of TOHKEMY
Patent document 2：2010 No. 238992 publications of TOHKEMY
Patent document 3：2014 No. 90031 publications of TOHKEMY
Patent document 4：JP speciallys permit No. 5555892 publication.
Non-patent literature
Non-patent literature 1：Three-bristle cudrania plants elegant tree, " basis of microbubble nano bubble ", boolean Suo Ke, sea water science, Japanese (" マ イ Network ロ バ Block Le Na ノ バ Block Le base ", Bull.Soc.Sea Water Sci., Jpn.), 2010, volume 64, 4-10 page.
Content of the invention
Invention problem to be solved
In past, using in glass substrate, the cleaning of Semiconductor substrate etc., by comprising aqueous alkali, organic solvent etc. Stripper, the method being removed under the high temperature more than 100 DEG C, from the reduction of the load to environment, energy-conservation and security For aspect, people consumingly wish to adopt pure water, can be carried out process by the relatively low temperature less than 100 DEG C Method.According to its meaning, it is believed that：Using the treatment fluid of the miniature nano bubble comprising gas, the method being carried out It is effective.
It is in the stripping means of the etchant resist described in patent document 1 must be requested that via the first strip step and Two strip step two steps, but have according to circumstances, and for removing the situation of the rinsing step of etchant resist, lift-off processing walks Suddenly complicated.In above-mentioned patent document 1, for the nano bubble comprising in stripper L1 used in the first strip step, Specifically do not record the method for generation of bubble and the diameter of bubble and density, even if it is believed that only with the first stripping In the case of step, still it is difficult to obtain sufficient peeling effect.
The pure water comprising the miniature nano bubble of ozone described in patent document 2 and 3 is used as stripping method or engraving method, But, it is believed that it applies also for the purposes of cleaning method.However, only recording as stripper in patent document 2 It is mixed with the water of micro bubbles, not with regard to the specific record of the use of nano bubble, enlightenment.In addition, being above-mentioned patent In engraving method described in document 3, the diameter of the miniature nano bubble being adopted in the range of 0.01～50 μm, and its Density is in the range of 1000/ml～100000/ml.In addition only it is recorded, the temperature of miniature nano bubble is also 15 In the range of～50 DEG C.
But, know according to the analysis of the present inventor etc., the bubble comprising in stripper micro- with diameter greater than 1 μm The occasion of type bubble, the stripping for the residue attachment against corrosion on substrate or the removal of the pollutant of metal or metallic compound, Do not assume sufficient effect.In addition know, the bubble that the effect peeled off or remove also is processed comprising in liquid significantly close The impact of degree, if this density is little, even if in the case of using nano bubble, still cannot obtain sufficient stripping or removal Effect.
In addition, same in patent document 4, for in order to obtain the attachment of the etchant resist residue on substrate stripping or The property of necessary bubble and characteristic for the big effect of the removal of the pollutant of metal or metallic compound, and treatment fluid Applicable elements, fully do not inquire into.Then, people consumingly require following cleaning methods and the stripping dress being applied to it Put, wherein, can be easy on one side using the stripper minimum to the load of environment, and it is effectively realized the stripping of etchant resist From or metal or metallic compound pollutant removal.
The present invention be directed to the problem in above-mentioned past and propose, the present invention provide a kind of using miniature nano bubble Cleaning method and cleaning device, wherein, flat by the miniature nano bubble that comprises in the stripper by regulation pure water etc. All particle diameters, preferably it further provides that the density of miniature nano bubble, and so that the temperature of above-mentioned stripper is reached most preferably, to processed Substrate, the method that injection comprises the simplicity for the treatment of fluid of miniature nano bubble, compared with the method in past, can reduce Load to environment, effectively and positively carries out the stripping of etchant resist residue attachment or metal or the metallization on substrate The removal of the pollutant of compound.
For solving the open scheme of problem
For the present invention, find to pass through following manner, it is possible to resolve above-mentioned problem, then draw the present invention, this following manner is： The average grain diameter of the miniature nano bubble comprising in the stripper of pure water etc. is reduced to nano-scale, in addition preferably, edge carries High direction specifies the density of miniature nano bubble, and the temperature of above-mentioned stripper is set in high temperature, particularly sets As close possible to 100 DEG C of the boiling point as pure water of temperature.
That is, the solution of the present invention is as described below.
(1) present invention provides a kind of cleaning method using miniature nano bubble, and it is to processed substrate, spray treatment Liquid, this processed substrate refers to adhere to the processed substrate of etchant resist on substrate or its surface is dirty because of metal or metallic compound The processed substrate of dye, this treatment fluid comprises by ice investment, flat when measuring by freezing transmission electron microscope The miniature nano bubble of equal gas in below 100nm for the particle diameter, and its temperature is maintained in the range of 30～90 DEG C, by This, carry out the stripping of above-mentioned etchant resist or the removal of above-mentioned metal or metallic compound.
(2) present invention provides the cleaning method using miniature nano bubble according to Section 1, wherein above-mentioned In the miniature nano bubble of gas, by ice investment, average grain when measuring by freezing transmission electron microscope Footpath is in below 30nm.
(3) present invention provides the cleaning method using miniature nano bubble according to (1st) or (2) item, wherein In the miniature nano bubble of the gas comprising in above-mentioned treatment fluid, by ice investment, show by freezing transmission electron Micro mirror and density when measuring are 108Individual/more than ml.
(4) present invention provides the cleaning using miniature nano bubble according to any one in (1st)～(3) Method, the treatment fluid wherein comprising the miniature nano bubble of above-mentioned gas is the miniature nano bubble comprising following gases Treatment fluid, the miniature nano bubble of this following gas occurred by following manner, and this following manner is：From in week To the outside of the cylinder with plural insertion aperture, by this insertion aperture, with pressure more than atmospheric pressure, injection comprises During the solution of dissolved gas, the mode concentrating on the center of above-mentioned cylinder according to water slug makes from in the radial section with above-mentioned cylinder The corresponding opening portion of insertion the aperture more than above-mentioned two being oppositely arranged on parallel same plane and the lysate that sprays Collision.
(5) present invention provides the cleaning using miniature nano bubble according to any one in (1st)～(4) Method, wherein above-mentioned gas are ozone or oxygen, and above-mentioned treatment fluid is the pure of the miniature nano bubble that comprises above-mentioned ozone or oxygen Water.
(6) present invention provides the cleaning using miniature nano bubble according to any one in (1st)～(5) Method, wherein above-mentioned gas are at least gas of any one comprising in ozone or oxygen, and carbon dioxide and hydrogen peroxide.
(7) present invention provides the cleaning using miniature nano bubble according to any one in (1st)～(6) Method, wherein before spraying the fog of above-mentioned treatment fluid, does including to the water droplet on above-mentioned non-process substrate and moisture Dry step.
(8) present invention provides the cleaning using miniature nano bubble according to any one in (1st)～(7) Method, the treatment fluid of miniature nano bubble wherein comprising above-mentioned gas, to the processed substrate as cleaning object, is applied Plus while ultrasonic activation, sprayed.
(9) present invention provides the cleaning using miniature nano bubble according to any one in (1st)～(7) Method, wherein in above-mentioned non-process substrate and between the electrode of the vicinity setting of the shower nozzle of the above-mentioned treatment fluid of injection, applies Voltage.
(10) present invention offer is clear using miniature nano bubble according to any one in (1st)～(9) Washing method, the temperature of wherein above-mentioned treatment fluid is in the range of 50～85 DEG C.
(11) present invention provides a kind of cleaning device using miniature nano bubble, and wherein this cleaning device includes：
Miniature nano-bubble generator, this miniature nano-bubble generator includes：
Attract the mechanism of gas and liquid respectively；With mechanism above-mentioned gas and aforesaid liquid pressurizeed and transported simultaneously；
Gas-liquid mixed groove, this gas-liquid mixed groove is used for by by the liquid comprising above-mentioned gas of transport, being mixed with new gas Close, rich in dissolved gas；
, in order to using the lysate heating by this heater, there is miniature nano bubble, this injection nozzle in injection nozzle Cylinder including cavity；Insertion aperture more than above-mentioned two, this insertion aperture is according in this circumference, plural insertion The corresponding opening portion of aperture is oppositely arranged on the same plane parallel with the radial section of above-mentioned cylinder；Positioned at above-mentioned cylinder extremely The miniature nano bubble jet of a few end, above-mentioned insertion aperture is according to by the kernel of section portion of this insertion aperture The mode of whole central crossbar in above-mentioned cylinder of extended line is arranged；
Shower nozzle, this shower nozzle is connected with above-mentioned injection nozzle, so as to processed substrate, injection comprises the miniature of above-mentioned gas and receives The treatment fluid of rice bubble, this processed substrate refers to adhere to the processed substrate of etchant resist or its surface on substrate because of metal or gold The processed substrate belonging to compound and polluting；
In addition, this cleaning device also includes retainer and heating arrangements, this retainer is oppositely arranged with shower nozzle with above-mentioned, so that Hold above-mentioned processed substrate, this heating arrangements is used in the range of 30～90 DEG C to the miniature nanometer gas comprising above-mentioned gas The treatment fluid of bubble is heated.
(12) present invention provides the cleaning device using miniature nano bubble according to (11st) item, wherein above-mentioned Heater is in order to carry out to the lysate of the state of the above-mentioned gas-liquid mixed being in after sending from above-mentioned gas-liquid mixed groove adding Heat and arrange heater.
(13) present invention provides the cleaning device using miniature nano bubble according to (12nd) item, wherein above-mentioned At least position of any one in the bottom and sidepiece of above-mentioned gas-liquid mixed groove for the heater, is arranged as heater.
(14) present invention offer is clear using miniature nano bubble according to any one in (11)～(13) Cleaning device, wherein this cleaning device also include drier, and this drier makes water droplet and moisture on above-mentioned non-process substrate It is dried.
(15) present invention provide according to any one in (11st)～(14) using miniature nano bubble Cleaning device, wherein above-mentioned retainer is connected with the supersonic generator that to above-mentioned processed substrate, can apply ultrasonic activation.
(16) present invention provide according to any one in (11st)～(14) using miniature nano bubble Cleaning device, wherein has in the retainer supporting above-mentioned non-process substrate and the vicinity in the shower nozzle spraying above-mentioned treatment fluid Between the electrode of setting, the voltage applying mechanism of applied voltage.
(17) present invention provide according to any one in (11st)～(16) using miniature nano bubble Cleaning device, wherein above-mentioned heater also include in above-mentioned shower nozzle and above-mentioned retainer at least any one heats Heater or heat blower.
(18) present invention provide according to any one in (11st)～(17) using miniature nano bubble Cleaning device, wherein above-mentioned heater also includes air conditioner, this use in refrigeration system in using above-mentioned shower nozzle and above-mentioned retainer as one Individual chamber and surround, by the internal control in above-mentioned chamber in 30～90 DEG C of temperature.
(19) present invention provides the cleaning using miniature nano bubble described in any one in (11st)～(18) Temperature during device, wherein above-mentioned heating is in the range of 50～85 DEG C.
The effect of invention
The cleaning method of the present invention can while reducing the load to environment, compared with existing method, can in short time, Effectively, and positively the stripping of residue attachment of etchant resist on substrate or the pollutant of metal or metal oxide are carried out Removal.In addition, in dry processed substrate, or when spraying the treatment fluid of miniature nano bubble comprising above-mentioned gas, lead to Cross applying ultrasonic activation, or carry out voltage applying, the further raising of cleaning performance can be sought.
The cleaning device of the present invention only by the miniature nano-bubble generator in past, combine for heating State the device of the miniature nano bubble of gas, with the shower nozzle with injection nozzle and the holding supporting above-mentioned processed substrate Frame, may make up simple or compact apparatus structure.In addition, can add and arrange dry only by these apparatus structures Dry mechanism, ultrasonic vibration generator, or voltage applying mechanism, seek the shortening of scavenging period and the efficient activity of cleaning.
Brief description
Fig. 1 is the front view of an example of the cleaning device using miniature nano bubble and the perspective representing the present invention Figure；
Fig. 2 is to represent the front view of miniature nano-bubble generator and the perspective view being arranged in the cleaning device shown in Fig. 1；
Fig. 3 is to be illustrated respectively in the cleaning device shown in Fig. 1, produces the nozzle form of miniature nano bubble and the spray of gas Penetrate the figure of the example of the shower nozzle for the treatment of fluid；
Fig. 4 is to represent that the one of liquid shown in Fig. 3 collides the shape graph of nozzle 16；
Fig. 5 is the figure of the version of heating arrangements in the cleaning device using miniature nano bubble represent the present invention；
Fig. 6 is another version of the heating arrangements in the cleaning device using miniature nano bubble represent the present invention Figure；
Fig. 7 is another version of the heating arrangements in the cleaning device using miniature nano bubble represent the present invention Figure；
Fig. 8 is in the cleaning device using miniature nano bubble represent the present invention, has the drying machine of processed substrate The figure of the device example of structure；
Fig. 9 is that in the cleaning device using miniature nano bubble represent the present invention, the voltage with processed substrate is applied Plus the figure of the device example of mechanism；
Figure 10 is air nanobubble water and the water not comprising nano bubble representing for embodiment 1, their amorphous ice The photo of electron microscopic mirror image and nano bubble size distribution figure；
Figure 11 is the ozone nanometer air-bubble representing for embodiment 2, the photo of electron microscopic mirror image of its amorphous ice and receiving The figure of the size distribution of rice bubble.
The explanation of label：
Label 1 represents cleaning device；
Label 2 represents bellowspump；
Label 3 represents gas-liquid mixed groove；
Label 4 represents heater platform；
Label 5 represents shower nozzle；
Label 6 represents retainer；
Label 7 represents processed substrate；
Label 8 represents supersonic generator；
Label 9 represents pump controller；
Label 10 represents pressure sensor；
Label 11 represents miniature nano bubble nozzle mounting portion；
Label 12 represents that liquid attracts tank；
Label 13 represents gas suction port；
Label 14 represents that gas attracts adjustment valve；
Label 15 represents injection nozzle；
Label 16 represents liquid collision nozzle；
Label 17 represents platform；
Label 18 represents cleaning device；
Label 19 represents heater；
Label 20 represents cleaning device；
Label 21 represents band heater；
Label 22 represents hot air apparatus；
Label 23 represents cleaning device；
Label 24 represents chamber；
Label 25 represents air conditioner；
Label 26 represents cleaning device；
Label 27 represents drier；
Label 28 represents cleaning device；
Label 29 represents electrode；
Label 30 represents power supply；
Label 31 represents voltage applicator.
Specific embodiment
The generating capacity of the miniature nano bubble of gas depends on the meltage of the gas comprising in the treatment fluid of cleaning, If the temperature of above-mentioned treatment fluid is high, the solubility constant of gas relative liquid is little, thus, has few the inclining of this generating capacity To.Thus, the occasion using under high temperature in the miniature nano bubble of gas, it is believed that leading to the reduction of cleansing power, Do not implement up till now.As described in also in above-mentioned patent document 3, the temperature of miniature nano bubble is in 15～50 DEG C of scope As interior, the solution of the miniature nano bubble comprising gas typically uses at low temperatures.In addition, in above-mentioned patent literary composition Offer and arrive described in 1：As the first strip step, the first stripper L1 being mixed with nano bubble is under 40～60 DEG C of low temperature Heating, this occasion is equivalent to the state being construed in order in nano bubble, maintains and heats with respect to the high permeability of etchant resist Occasion situation, it is not suitable for for the treatment fluid of the nano bubble comprising gas being directly injected to processed substrate, carries out The processing method that resist is peeled off.
This situation relatively, in the present invention, as being not limited to common sense in the past, as cleaning, specifically to optimal The property of miniature nano bubble and characteristic, and the result examined of processing method and find, by using gas The particle diameter of the miniature nano bubble situation less than the past, is in height in the treatment fluid making the miniature nano bubble comprising gas , to processed substrate, the directly method of injection, the stripping of the residue attachment of etchant resist, by metal or metal compound for the state of temperature Thing constitute pollutant remove with pass by method compared with, can the short period, effectively and positively carry out.
The size of the miniature nano bubble comprising in the treatment fluid adopting in the present invention can be specified with average grain diameter. The amount with the bubble that average grain diameter is less, comprises in nano bubble is more, the fewer tendency of the amount of the bubble of miniature grade.Micro- The size of type nano bubble is also affected because of size distribution (standard deviation of particle diameter), but this impact is little, treatment fluid In the average grain diameter of miniature nano bubble that comprises be nano bubble grade, it is necessary to have average grain diameter as little as possible.
In the present invention, for the miniature nano bubble of gas, by ice investment, show by freezing transmission electron Micro mirror and average grain diameter when measuring in below 100nm, preferably in below 30nm.Exist in the average grain diameter of miniature nano bubble During below 100nm, if being the state under high temperature, stripper being heated, this liquid is sprayed, then can be shorter Time, with high ratio, positively carry out the stripping of the residue attachment of etchant resist, the dirt being made up of metal or metallic compound The removal of dye thing.In addition, if above-mentioned average grain diameter in below 30nm, then can obtain significantly big effect.
As the assay method of the particle diameter of miniature nano bubble, know there are various methods in past people.At these In method, because the determination method of nano bubble is difficult to optical observation, therefore such as, using the light scattering of Mie scattering light The nano particle trace analysis method of the Brownian motion of bubble particles in method, laser refraction scattering method, observation liquid, pore electricity Resistance method (coulter counter method), dynamic light scattering method, using MEMS (Micro Electro-Mechanical Systems) Resonant quality determination method of beam etc..Equally beyond these methods, it has been proposed that have by Zeta potential mensure and obtaining and receive The method of the particle diameter of rice bubble, using rotation capturing agent, the nano bubble being confirmed by electron spin resonance (ESR) Presence method.
The present inventor etc. proposes as miniature nano bubble determination method other than the above, by ice investment, by Freezing transmission electron microscope and method for measuring (with reference to JP spy 2014 No. 230407 documents).The method can be by making Liquid is in amorphous solid state shape, using transmission electron microscope, observes and is in above-mentioned amorphous solid state shape The ultra-fine microbubble comprising in liquid and its distribution are directly divided by the superfine air bubble comprising in liquid as image Analysis.Thus, the ultra-fine microbubble with the particle diameter less than 10 μm can accurately be measured.The gas specifying in the present invention micro- The average grain diameter of type nano bubble is measured by the method, obtains.
The method being measured by freezing transmission electron microscope by ice investment will be held in piconet Liquid on lattice or miniature mesh is used as sample, by transmission-type electricity in the range of 10～300 kiloelectron-volts (keV) for the energy Sub- microscope, the quantity set of the electron beam being adopted when observing is existedIt is measured.
For the temperature for the treatment of fluid of the present invention, the examination when cleaning performance peeled off or remove, cleaning step The process of sample, the sight of the management of temperature, the ability of cleaning device and durability, energy-conservation, the load to environment and security Point it is necessary to more than room temperature～100 DEG C in the range of carry out optimization process.Particularly, in the present invention, in order to reduce to ring The load in border, treatment fluid is preferably with pure water.Then, the temperature for treatment fluid is it is necessary to be set in 30 of the boiling point less than water In the range of～90 DEG C, preferably in the range of 50～85 DEG C.The occasion being less than 30 DEG C in the temperature of processing system, even if adopting Comprise average grain diameter in the case of the treatment fluid of the miniature nano bubble of the gas of below 100nm, during due to having process Between long tendency, therefore still cannot fully obtain the effect of the present invention.If increase treatment fluid temperature, can in short time, And effectively carry out the stripping of the residue attachment of etchant resist, the removal of the pollutant being made up of metal or metal oxide, But if the temperature of above-mentioned treatment fluid is more than 90 DEG C, then the difficult management of temperature.In addition, the temperature in above-mentioned treatment fluid exceedes 90 DEG C of occasion, due to the volatilization with treatment fluid, the rate of release of miniature nano bubble is accelerated, therefore peels off or removal effect Tendency occurs, the advantage that the temperature for the treatment of fluid is higher loses.It is set in the range of 50～85 DEG C in the temperature for the treatment of fluid When, can stably obtain high cleaning performance.
In the present invention, not only specify the average grain diameter of the miniature nano bubble of gas, and pass through the process of 1ml The number comprising in liquid, i.e. the density regulation of miniature nano bubble, in high value, can achieve high cleaning performance.The present invention The density of the miniature nano bubble comprising in the treatment fluid being adopted, is shown by freezing transmission electron by ice investment Micro mirror and density when being measured, the treatment fluid for 1ml is it is necessary to be more than 108Individual, more preferably greater than 1012Individual/ml, particularly More preferably greater than 1016Individual/ml.More than miniature nano bubble of the present invention, because original average grain diameter is very little, therefore such as Really its density is less than 108Individual, the concentration of the gas because comprising in bubble little it is impossible to be sufficiently carried out the residue attachment of etchant resist Stripping, the removal of the pollutant being made up of metal or metal oxide.Such as, adopt the high ozone of cleaning performance in gas Occasion, ozone concentration is higher, and the cleaning performance being obtained is bigger, but if the density of miniature nano bubble is less than 108It is individual, The ozone concentration comprising in treatment fluid is few, and cleaning performance is limited.
As the miniature nano bubble of gas of the present invention and the combination for the treatment of fluid, preferably, above-mentioned gas are Ozone or oxygen, above-mentioned treatment fluid is the pure water of the miniature nano bubble comprising ozone or oxygen.Ozone and pure water or oxygen can be passed through With combining of pure water, realize the reduction of the load to environment and the simplification of cleaning step and both high efficiencies, and can obtain Obtain high cleaning performance.Wherein, because the miniature nano bubble of the ozone of ozone and the combination of pure water can seek cleaning performance Further raising, therefore it is particularly preferred.
For the miniature nano bubble of gas of the present invention, above-mentioned gas are at least ozone or oxygen, in addition Include well at least anyone in carbon dioxide and hydrogen peroxide.Such as, above-mentioned gas include ozone or oxygen and carbon dioxide Ozone that treatment fluid can be caused by attachment on processed substrate for the carbon dioxide adsorption or pollutant or oxygen are to cleaning The induction of thing and the oxidation of carbon dioxide, carry out significantly more efficient cleaning.In addition, including ozone or oxygen and hydrogen peroxide Occasion, there is the reaction with hydrogen peroxide by oxygen or ozone, produce the situation of hydroxyl (OH), this hydroxyl can be utilized Strong oxidizing force.May know that, wherein, particularly, miniature for the gas making the combination of smelly oxygen and carbon dioxide Nano bubble, is not only easily processed, and compared with the method in past, obtains very big effect.
As above, the cleaning method of the present invention can be carried by having the injection of the treatment fluid of miniature nano bubble High cleaning effect, but by by be provided below 3 Combination of Methods, cleaning speed can be improved, seeks scavenging period Time shortening is greatly improved with cleaning efficiency.
First, as first method, preferably, injection have above-mentioned gas miniature nano bubble treatment fluid it Before, using the step of the water droplet making on above-mentioned non-process substrate and moisture drying.It is on above-mentioned non-process substrate to remain water droplet With the occasion of moisture, even if injection above-mentioned gas miniature nano bubble treatment fluid in the case of, due to residual water So that the density of the miniature nano bubble of gas is reduced, therefore lead to the reduction of cleaning performance.In addition, for miniature nanometer gas Bubble, people know in its particle surface there is Zeta potential, around by OH-Negative electrical charge surround.Although concrete reason is unclear Chu, but it is believed that this OH-It is through various reactions, promote the attachment on processed substrate or the decomposition of pollutant to go The composition removing.But, it is believed that：The water residuing on above-mentioned non-process substrate is used as OH-Ion close to above-mentioned attachment or Pollutant and retaining wall when acting on, weaken and utilize OH-The cleaning action of ion.Then, can be by using making above-mentioned non-process lining Water droplet on bottom and the step of moisture drying, the reason the effect of miniature nano bubble of the gas that gets obstacles out of the way as much as possible, Thus, seek the raising of cleaning performance.
Above-mentioned drying steps can using such as, rotary blower that the cleaning step of common semiconductor wafer is adopted, The drier of isopropanol (IPA) steam dryer, spin etching machine etc. and carry out.Rotary blower is the centrifugation by rotation Power and the filter via ulpa filter etc. and the flowing of the air of cleaning that attracts, control to processed substrate cleanly Water, makes the device of water droplet and moisture drying.In addition, in the occasion of the simplification seeking above-mentioned drying steps, can be using in injection gas Before the miniature nano bubble of body, make the processed substrate high-speed rotation being installed on retainer in advance, utilizing centrifugal force While, the method removing water droplet and moisture.In this occasion, may also be employed by high-speed rotation, by dry air or height Warm air (also can replace air, and be employed as the nitrogen of inert gas.) blow on above-mentioned processed substrate, remove water droplet and The method of moisture.In addition, the speed of the drying in order to improve water droplet and moisture, liquid that also can be high to the volatility of ethanol etc. or The water comprising this volatile liquid carries out spraying treatment, to processed substrate.These drying steps can be combined to by the present invention Cleaning method and one of a series of step of constituting step, but the detached step of alternatively batch.
In the present invention, as the second method for improving cleaning performance, to the substrate as cleaning object, apply super Acoustic vibration, in this occasion, can obtain the stripping of the residue attachment of the relatively above-mentioned substrate of etchant resist, or by metal or metal oxygen The big effect of removal of the pollutant that compound is constituted.Although its mechanism is specifically unclear, it is believed that：Ultrasonic activation does not have There is a fine particle diameter by comprising in above-mentioned treatment fluid, help the uniform destruction of miniature nano bubble being difficult to destroy, Encourage gas present in miniature nano bubble, such as, the function of the release of ozone？That is, in the cleaning method of the present invention In, even if being maintained at 30～90 DEG C in above-mentioned treatment fluid, in the case of being preferably kept in 50～85 DEG C of high temperature, due to miniature Nano bubble has the particle diameter of superfine, therefore it still stays in above-mentioned treatment fluid.Due in this miniature nano bubble because to quilt Process the injection of substrate, when open on processed substrate, by applying ultrasonic activation, the gas in miniature nano bubble Opening can be uniform, and realize short space or slight void, therefore it is believed that also go far towards cleaning performance.
If vibration frequency during the above-mentioned ultrasonic activation of applying is in the range of 10kHz～3MHz, can be fully real The effect of the existing present invention.In the high occasion of vibration frequency, due to there is the shortcoming assuming processed substrate, cracking or damaging, make Become the situation of the impact of difference, thus particularly best, and vibration frequency is in the range of 10kHz～3MHz.
In addition, it is known that as the third method for improving cleaning performance, by above-mentioned non-process substrate with set It is placed in and spray between the electrode of the vicinity of shower nozzle of above-mentioned treatment fluid, applied voltage, the relatively above-mentioned non-place of etchant resist can be obtained The stripping of the residue attachment of reason substrate, or the big effect of removal of the pollutant being made up of metal or metal oxide.At this In method, in the vicinity of the shower nozzle spraying above-mentioned treatment fluid, electrode is set, between this electrode and above-mentioned non-process substrate, By dc source or pulse power etc., apply the voltage of continuous DC voltage or pulse type, meanwhile, receive miniature , on processed substrate, the method is based on the new sight undertaking the function of mutually working in coordination with the raising of cleaning performance for rice bubble jet Point.For the miniature nano bubble comprising in treatment fluid, due to from the teeth outwards, there is OH-Ion, therefore have by by electricity Pressure applies, and decomposes similar phenomenon with electricity, and promotion has the destruction of miniature nano bubble of the trickle particle diameter being difficult to destroy Possibility.Thus, it is also believed that, help gas present in miniature nano bubble, such as, smelly oxygen and carbon dioxide etc. Release, but the reason it is concrete is unclear.
When using the method, compared with the mode being directly applied to voltage on processed substrate, using in supporting State the retainer of non-process substrate, carry out this point between above-mentioned retainer and the electrode of the vicinity being arranged at above-mentioned shower nozzle Can easily operate, in addition in terms of the security for be also practical.In addition, as applied voltage, preferably, from being readily available High voltage, the reasons why energy efficiency height etc., compared with DC voltage, using pulse voltage.
As above, while being applied voltage, when being carried out by the miniature nano bubble of gas, Processed substrate formed using circuit layout after semiconductor wafer occasion, voltage applies to be to constitute to obtain from chip and partly lead The main cause of the electric misoperation of volume elements part etc., produces the impact of difference.In this occasion, may also be employed such as, by ion Generator etc. and the ion of offsetting electric charge is often launched from the inner side of above-mentioned process substrate, reduce the voltage to chip apply and The method of the impact of the difference causing.On the other hand, in the occasion of the cleaning of the chip being applied to before formation circuit layout, due to The impact of such difference need not be considered, therefore obtain very big cleaning performance.
In the present invention, the temperature being above-mentioned treatment fluid in the range of 30～90 DEG C, preferably in 50～85 DEG C of model State in enclosing, to the processed substrate as cleaning object thing, when spraying this treatment fluid, can be by making above-mentioned processed substrate Rotation, is uniformly cleaned.
Below by accompanying drawing, the cleaning device of the cleaning method implementing the present invention is illustrated.
Fig. 1 be represent the present invention an example of the cleaning device using miniature nano bubble figure, Fig. 1 (a) and Fig. 1 (b) is respectively front view and the perspective view of cleaning device.Cleaning device 1 shown in Fig. 1 is by bellowspump 2, gas-liquid mixed groove 3, heater 4 and shower nozzle 5 are constituted, and this shower nozzle 5 has, in figure unshowned miniature nano bubble, the miniature of nozzle occurs Nano bubble mechanism is constituted, and has injection nozzle, and this injection nozzle is used for the place of the miniature nano bubble that injection comprises gas Reason liquid.By heater 4, the treatment fluid of heating, from shower nozzle 5, sprays towards the processed substrate 7 being supported on retainer 6, Produce miniature nano bubble, be carried out.The retainer 6 of the processed substrate 7 of supporting doubles as the turntable with rotating mechanism. In addition, retainer 6 is to be connected with ultrasound transmitter device 8, as needed, the mechanism of ultrasonic wave can to processed substrate 7, be applied.
Only only pull out the part of the miniature nano-bubble generator being arranged in the cleaning device shown in Fig. 1, Fig. 2 represents Its structure.In fig. 2, Fig. 2 (a) and Fig. 2 (b) is respectively front view and the perspective view of miniature nano-bubble generator.In Fig. 2 In, label 2 represents bellows cylinder pump, and label 9 represents pump controller, and label 3 represents gas-liquid mixed groove, and label 10 represents that pressure passes Sensor, label 11 represents miniature nano bubble nozzle mounting portion, and label 12 represents liquid suction tube, and label 13 represents Gas suction port, label 14 represents that gas attracts adjustment valve.
Arrange their perspective views shown in as Fig. 2 (b).The ripple that liquid portion is made by fluororesin connect by pump 2 Tube pump 2, using liquid suction tube 12, gas attracts adjustment valve 14, adjusts gas flow, in the inside of pump, mixing liquid and gas, This state, sucks, and in bellows interior stirring, dissolving, is compressed, so that gas is dissolved in liquid.In the present invention, ripple Pipe cylinder pump 2 can be nonmetallic, and plastics fluororesin beyond may also be employed, such as, polyethylene, polypropylene and poly terephthalic acid second The general-purpose plastics of diol ester etc.；The engineering plastics of polyacetals, polyamide, Merlon and Noryl etc.；Polyether sulfone, polyphenyl Thioether, polyether-ether-ketone, at least one of superengineering plastics of liquid crystal polymer etc. etc..In this occasion, not only in pump, but also Set portion in liquid, start fluororesin, using above-mentioned various plastics, thus, the high miniature nano bubble of reliability can be formed and send out Raw device.In addition, in the present invention, do not requiring strict no metallized cleaning, the occasion of sterilization, not only can adopt above-mentioned Plastics, may also be employed metal, pottery.
Then, in gas-liquid mixed groove 3, by pump 2, gas and liquid are stirred and force feed.Pump 2 is mainly using pressure Contracting air actuation formula bellows cylinder pump, but DYN dynamic pump may also be employed.The gas of gas-liquid mixed groove 3 and liquid bear and are derived from The pressure of pump, gas easily dissolves.That is, by pressure sensor 10, check the pressure from pump 2 force feed gas and liquid.Logical Cross the method, carry out increasing the amount of dissolved gas, increase the preparation of the generating capacity of miniature nano bubble.Micro- in the present invention In type nano bubble generation system, pump 2 is practical using bellows cylinder pump 2 this point, but, can adopt as needed In the past, the vibrating armature pump of known piston pump, flange pump or barrier film etc., gear pump, eccentric driven pump or spiral shell as liquid-feeding pump The rotary pump of line pump, boxlike pump, vane pump etc..
Institute's force feed, enter the liquid in gas-liquid mixed groove 3 and gas mixing, gas is dissolved in the inside of liquid, then, Give miniature nano bubble generation installation portion 11.Miniature nano bubble generation installation portion 11 is and makes in large quantities The diameter of the gas of dissolving is less than 100 μm, the part of the nozzle connection of the miniature nano bubble of more preferably less than 30 μm of size.
Now, by pressure sensor 10, the variation of the fluid pressure between viewing nozzle 11 and gas-liquid mixing channel 3, prison Dissolved state depending on gas-liquid.By formed, realizing must for stable miniature nano bubble generation nozzle The certain pressure state wanted.
The step implemented using the of the present invention miniature nano-bubble generator shown in Fig. 2 (a) and Fig. 2 (b) Suddenly as described below.Using liquid suction tube 12, what gas suction port 13 and gas attracted adjustment pump 14 and carried out is gas/liquid Attract step.Pressure is adjusted by pressure sensor 10.Then, using bellows cylinder pump 2, to the liquid including gas The step pressurizeed is gas/liquid pressurization steps.Afterwards, in order that comprise the liquid of pressurized above-mentioned gas with new Gas mixing, the step being carried out using pump controller 9 and gas-liquid mixing channel 3 is rich in step for dissolved gas.Then, make aftermentioned The generation nozzle of the present invention be connected with miniature nano bubble generation nozzle mounting portion 11, thus, produce miniature nanometer Bubble.This step is referred to as dissolved gas granular step, but, miniature nano bubble can be by from having more than 2 The outside of the cylinder of insertion aperture, by this insertion aperture, is sprayed with pressure more than atmospheric pressure, the one of the inside of above-mentioned cylinder The mode of point collision occurs.
Fig. 3 is illustrated respectively in the cleaning device of Fig. 1, produces the nozzle form of miniature nano bubble and the injection of gas The example of the shower nozzle for the treatment of fluid.In figure 3, Fig. 3 (a) and Fig. 3 (b) is respectively sectional view and the top view of shower nozzle 5.Fig. 3 (a) table Show the section along the D D line in Fig. 3 (b).
As shown in Fig. 3 (a) and Fig. 3 (b), shower nozzle 5 is by for the injection nozzle 15 of spray treatment liquid and miniature Nano bubble injection nozzle 16 is constituted with platform 17, liquid collide 1 or 2 of nozzle 16 installed above and be arranged on platform 17. Here, liquid collides the example that nozzle 16 is the shape of the nozzle of miniature nano bubble that gas occurs.From liquid collision Nozzle 16 and the treatment fluid (Q) that sprays, from the jet 15a of injection nozzle 15, sprays towards processed substrate 7, carries out clear Wash.In the present invention, the temperature for the treatment of fluid adjusts in the range of 30～90 DEG C, adjusts preferably in the range of 50～85 DEG C, But the adjustment of this temperature is preferably carried out by means of the treatment fluid of the part of shower nozzle 5.Its reason is：Cleansing power and logical Correlation between the temperature of the treatment fluid crossing the part of shower nozzle 5 is good.Thus, preferably in shower nozzle 5, it is provided at mensure The temperature sensor of the temperature of reason liquid.
In addition, Fig. 4 is the enlarged drawing of the part of setting liquid collision nozzle 16 in the shower nozzle 5 shown in Fig. 3 (a).As Fig. 4 As shown, collide the shape of 1 of nozzle 16 for liquid, aperture 16a towards liquid collide nozzle 16 center but Empty.Make by this aperture 16a, the liquid being entered with high pressure is collided the core of nozzle 16 in liquid, collided, and produces Raw miniature nano bubble, sprays along the direction shown in arrow Q.Know as the result of experiment, if to liquid Speed V is controlled, then the amount of the miniature nano bubble of generation is many, and the life-span length of bubble.Mesh as speed V , using if the speed more than the 25m/ second, then there is nozzle for stable miniature nano bubble in mark.
Fig. 5 is the version of the heating arrangements in the cleaning device using miniature nano bubble represent the present invention Figure.Cleaning device 18 shown in Fig. 5 is with the structure difference of the cleaning device 1 shown in Fig. 1：Heater 4 shown in Fig. 1 is not It is arranged at the downstream of gas-liquid mixed groove 3, in the bottom of gas-liquid mixed groove 3, be provided as the heater 19 of heating arrangements, heating Mechanism is arranged at the downstream of gas-liquid mixed groove 3.The position of setting heater 19 is not limited to the bottom of gas-liquid mixed groove 3, also may be used It is arranged at the sidepiece of gas-liquid mixed groove 3.In addition, may also be disposed on the bottom of gas-liquid mixed groove 3 and sidepiece both at.
Fig. 6 is another variation of the heating arrangements in the cleaning device using miniature nano bubble represent the present invention The figure of son.In cleaning device 20 shown in Fig. 6, the pipe that gas-liquid mixed groove 3 and shower nozzle 5 are connected is by band heater 21 Heating, in addition, shower nozzle 5 is heated by storage heater 22.Even if in the case of using which, still can be by treatment fluid Within the temperature range of temperature is set in regulation.Device shown in Fig. 6 has both of band heater 21 and storage heater 22, However, it is possible to the mode for the anyone in both settings.
Fig. 7 is another variation of the heating arrangements in the cleaning device using miniature nano bubble represent the present invention The figure of son.For the cleaning device 23 shown in Fig. 7, in the device shown in Fig. 1, also set up air conditioner 25, this air conditioner 25 is used Surround as a chamber 24 in the space also being included shower nozzle 5 and retainer 6, by the internal control in chamber 24 at 30～90 DEG C Temperature.Cleaning device tool shown in Fig. 7 has the advantage that, i.e. treatment fluid is easily adjusted to the temperature specifying, the control of temperature Can be uniform.
Fig. 8 is to represent the drying in the present invention is using the cleaning device of miniature nano bubble with processed substrate The figure of the device example of mechanism.For the cleaning device 26 shown in Fig. 8, in the cleaning device shown in Fig. 1, drier is set 27, this drier 27 is for making the water droplet on the processed substrate residue in semiconductor wafer etc. and moisture drying.As dry Dry mechanism 27, as discussed above, can adopt rotary blower, isopropanol (IPA) vapor drying plant, spin etching machine Deng Fig. 8 represents the example of rotary blower.In cleaning device 26, first, the processed substrate 7 of chip etc. is inserted drying In mechanism 27, it is dried by obtaining the centrifugal force+air-breathing drying mode of surrounding air.Then, as the dotted line arrow of in figure As shown in head, take out dried processed substrate 7, be supported on the retainer 6 with rotating mechanism, from having In the shower nozzle 5 of the unshowned injection nozzle of in figure, the treatment fluid direction with the miniature nano bubble of gas is made to be rotated Processed substrate 7, as the symbol ↓ shown of in figure, is sprayed.
Fig. 9 is to represent the voltage in the present invention is using the cleaning device of miniature nano bubble with processed substrate Apply the figure of the device example of press mechanism 31.Voltage applies press mechanism 31 substantially, by electrode 29, power supply 30, constitutes with electric wire, This electrode 29 is arranged at the vicinity of the shower nozzle 5 of spray treatment liquid, and this electric wire will support the retainer of electrode 29 and processed substrate 7 6, it is connected with power supply 30, it is the device and part adding in the cleaning device shown in Fig. 1 that voltage applies press mechanism 31.In Fig. 9 In shown cleaning device 28, electrode 29 and shower nozzle 6 respectively with power supply 30 (+) side and (-) side electrically connects.There is gas The treatment fluid of miniature nano bubble while the applied voltage by power supply 30, as the symbol ↓ shown of in figure, court Sprayed to processed substrate 7, carried out the stripping of residue attachment of the relatively above-mentioned non-process substrate of etchant resist or by gold The removal of the pollutant of genus or metallic compound composition.As the scope of the electrostatic capacitance value of power supply 30, have no particular limits, But apply to be located at the DC voltage in the range of 10～100V, or voltage is in the range of 10～100V, have 10～ The pulse voltage this point of the frequency of 100kHz is practical.In the present invention, compared with DC voltage, preferably with pulse Voltage.
In cleaning device shown in Fig. 1 and Fig. 5～Fig. 7, only by the miniature nano-bubble generator in the past In, it is additionally implemented for the device of the miniature nano bubble of hot gas, with the injection spray having for spraying to processed substrate The shower nozzle of mouth and the retainer supporting above-mentioned processed substrate, may make up simple or compact apparatus structure.In addition, Fig. 8 Can be by, in the cleaning device shown in Fig. 1 and Fig. 5～Fig. 7, adding processed substrate respectively with the cleaning device shown in Fig. 9 The mode of drier or voltage applying mechanism is constituted, and may be formed at the side of the efficient activity of the shortening seeking scavenging period and cleaning The good device in face.
Embodiment
Below, specifically illustrate to based on embodiments of the invention, but, the present invention is not limited to these completely Embodiment.
(embodiment 1)
According to the method disclosed in above-mentioned patent document 4, by nanobubble water producing device ∑ PM-5 (bellows pump type) (production of Xi Ma Science and Technology Ltd.), makes air nanobubble water, by pure water, dilutes according to 100 times, as mensure examination Sample.In addition, with reference to the pure water before adopting nanobubble water to make with sample.Pure water before nanobubble water makes is equivalent to and does not wrap Water containing nano bubble.
By sample Quick freezing device Vitrobot Mark IV (production of FEI society), upper after Quick freezing just making State air nanobubble water, make the sample that nano bubble is embedded in amorphous ice, form observation sample.Sample thickness is 200nm.On the other hand, similarly for the water (pure water) not comprising nano bubble, by sample Quick freezing device, carry out rapidly Freeze, form reference sample.Sample thickness is 200nm.Freezing transmission electron using the electron energy with 300keV Microscope Titan Krios (production of FEI society), directly observes and is embedded in amorphous ice under conditions of specimen temperature is for 80K Nano bubble.Electron beam for observing passes through Low dose technology, isDegree, the sample temperature in photography Degree rising substantially without.
Figure 10 represents and freezes the amorphous ice of the pure water including air nano bubble and freeze pure water (not comprising nano bubble Water) the electron microscope of amorphous ice photo.In addition, being directed to air nanobubble water, under electron micrograph Provide the size distribution (representing the block diagram of size dispersion) of bubble.
The photo of the electron microscope shown in the left side of Figure 10 is after being made by ∑ PM-5, observes at once Air nano bubble, the contrast of the circle observed in photo is nano bubble.As the result of image procossing, average grain diameter For 7nm.Volume for the amorphous ice of the mensure of block diagram is 3.2 × 10- 14Cc (400nm × 400nm × 200nm thickness), Wherein, including about 260 bubbles.From observing the nanobubble water of dilution according to 100 times, it is evaluated as：This nanobubble water Air nano bubble concentration be 8.1 × 1017Individual/cc (ml) (81,000,000,000,000/cc (ml)).This situation relatively, can confirm that, figure The photo of the electron microscope shown in 10 right side is amorphous ice, does not have the change of contrast, for not comprising the water of bubble.As So, by the assay method of the present invention and measure device, not only can by the presence of the nano bubble comprising in water directly as Image and confirm, and obtain and the particle diameter of nano bubble, number, size distribution and the relevant information of form.
The pure water of the air nano bubble shown in the left side comprising Figure 10 is applied to the cleaning device shown in Fig. 1, carries out attached The cleaning of the residue etchant resist in the wafer substrates of semiconductor.In the pure water comprising air nano bubble, by can wink Between the heater-treater 4 that heated, temperature is brought up to about 85 DEG C, air nanometer gas will be comprised by shower nozzle 5 The temperature of the pure water of bubble is adjusted in the range of 70～75 DEG C.Here, due to by 1 temperature, strictly setting and comprising sky The temperature this point of the pure water of gas nano bubble, for the occasion considering production, is unpractical, therefore adjustment temperature is minimum Temperature-visualized is in heating-up temperature specified in treatment fluid of the present invention.It is dissolved with air from shower nozzle 5 transmitting, carry out The pure water heating, produces miniature nano bubble, is carried out.Now, for the semiconductor die as cleaning object Piece substrate, makes retainer 6 rotate, and while rotation, is carried out.As a result, may know that, in the miniature nanometer of normal temperature In bubble generator, if making the height that the cleaning that the time fully peeling off the residue of etchant resist is 30 minutes is in 70～75 DEG C Under temperature, can complete about 1/2 time, this time is within 15 minutes.
In addition, as the gas being dissolved in pure water, replacing air, and adopt oxygen, by method as hereinbefore, Oxygen nano bubble is used as the occasion of cleaning treatment fluid, can confirm that, the time that the residue of etchant resist is fully peeled off is 10 Minute, scavenging period can be made to shorten to 1/3.
(embodiment 2)
According to the method disclosed in above-mentioned patent document 4, by nanobubble water producing device ∑ PM-5 (bellows pump type) (production of Xi Ma Science and Technology Ltd.), makes ozone nanometer air-bubble, then will be by pure water, according to 100 times to through half The sample that the ozone nanometer bubble of the time of the moon is diluted and is formed is used as measurement sample.Sample thickness is 200nm.Logical Cross sample Quick freezing device same as Example 1, this sample is carried out after Quick freezing, by same as Example 1 Freezing transmission electron microscope, directly observes under conditions of specimen temperature about 80K, is embedded in the nanometer in amorphous ice Bubble.Electron beam for observing passes through Low dose technology, isDegree, the specimen temperature in photography upper Rise substantially without.
Figure 11 represents the photo of the electron microscopic mirror image observed using this sample and the grain of the bubble being located under this photo Degree distribution (represents the block diagram of size dispersion).Image shown in Figure 11 is after being made by ∑ PM-5, observes through more than half The image of the ozone nanometer bubble of individual month.Average grain diameter is 18nm, it is believed that compared with the air nano bubble shown in Figure 10 Relatively, slightly larger, fit by being formed, also produce the coarsening of size.Volume for the amorphous ice of the mensure of block diagram is 3.2 ×1014Cc (400nm × 400nm × 200nm thickness), wherein, including about 21 bubbles.From observation dilution according to 100 times Nanobubble water rises, and is evaluated as：The concentration of the air nano bubble of this nanobubble water is 8.6 × 1016Individual/cc (ml) (about 90 Trillion/cc (ml)).
The pure water comprising the ozone nanometer bubble shown in Figure 11 is applied to the cleaning device shown in Fig. 1, using its surface because Metal or metal oxide and the wafer substrates 4 of semiconductor that pollute, enter row metal or metal oxide pollutant clear Wash.For the pure water comprising ozone nanometer bubble, by the heater-treater 4 that can be instantaneously heated, temperature is carried High to about 80 DEG C, will be adjusted in the range of 65～70 DEG C by the temperature of the pure water comprising air nano bubble of shower nozzle 5.From Shower nozzle 5 and launch be dissolved with ozone, through heating pure water, produce miniature nano bubble, be carried out.Now, right In the semiconductor wafer substrate as cleaning object, so that retainer 6 is rotated, while rotation, be carried out.Scavenging period is 5 minutes.For the analysis of the pollutant in semiconductor wafer substrate, it is scanned elementary analysis (the EDX survey of type electron microscope Fixed).In following tables 1, provide the quantitative analysis results of the element in semiconductor wafer substrate.Each element amount shown in table 1 Unit be (× 1010Atom/cm2).
(table 1)
Can confirm that as shown in table 1, the pure water of ozone nanometer bubble will be comprised with dealing with by the state in high temperature Liquid, in short time, effectively, and can substantially completely clean the dirt of metal in semiconductor wafer substrate or metallic compound Dye thing.
The pure water comprising ozone nanometer bubble of the present embodiment is applied to the cleaning device shown in Fig. 1, by with embodiment 1 Identical method, the cleaning of the residue etchant resist carrying out being attached in the wafer substrates of semiconductor.Comprising ozone nanometer bubble Pure water in, by the heater-treater 4 that can be instantaneously heated, temperature is brought up to about 80 DEG C, will be by shower nozzle 5 The temperature of the pure water comprising air nano bubble be adjusted in the range of 65～70 DEG C.It is dissolved with ozone from shower nozzle 5 transmitting, The pure water being heated, produces miniature nano bubble, is carried out.Now, for partly leading as cleaning object Body wafer substrates, make retainer 6 rotate, and while rotation, are carried out.As a result, may know that, miniature in normal temperature In nano-bubble generator, if making the cleaning that the time fully peeling off the residue of etchant resist is 20 minutes be in 65～70 DEG C High temperature under, then can complete the short period, this time is within 3 minutes.
(embodiment 3)
Not only include nano bubble ozoniferous, the pure water also wrapping carbonated gas (carbonic acid gas) is with dealing with Liquid.Processed substrate adopts the semiconductor wafer of size same as Example 2 it is adaptable to the cleaning device shown in Fig. 1, passes through Method same as Example 2, the cleaning of the residue etchant resist carrying out being attached in the wafer substrates of semiconductor.Comprising this reality The pure water applying the nano bubble that example is adopted is produced by ozone generator in dissolved gas are rich in step using importing Ozone and carbonic acid gas (amount of about the 1/5 of ozone amount), dissolved ozone concentration are adjusted to the pure water of more than 200ppm, by upper State nanobubble water producing device ∑ PM-5 and make.By make treatment fluid place a couple of days after, by with enforcement Example 1 identical method, measures the nano bubble comprising ozone and carbonic acid gas, confirms, average grain diameter as the result measuring Less than 30nm, the density of the treatment fluid of every 1ml is also 1016More than individual/cc (ml).Because the placement number of days of this treatment fluid is less than upper State embodiment 2, therefore have compared with the result shown in Figure 11, there is the nano bubble of trickleer particle diameter, in addition nanometer The tendency that the density of bubble particles also improves further.
For make treatment fluid, by the heater-treater 4 that can be instantaneously heated, by its temperature Bring up to about 80 DEG C, the temperature of the pure water by the nano bubble comprising ozone and carbonic acid gas of shower nozzle 5 is adjusted to 65～ In the range of 70 DEG C, launch from shower nozzle 5, produce miniature nano bubble, be meanwhile carried out.Now, for conduct The semiconductor wafer substrate of cleaning object, makes retainer 6 rotate, and while rotation, is carried out.As a result, relatively existing Using comprise ozone nanometer bubble pure water when (above-described embodiment 2) in, the time of residue fully peeling off etchant resist is 65 Under conditions of～70 DEG C, situation within 3 minutes, in the present embodiment using the nano bubble comprising smelly oxygen and carbon dioxide In, within 2 minutes, can be peeled off with the shorter time under identical temperature conditionss.
(embodiment 4)
Using the treatment fluid of the bag nano bubble ozoniferous making according to above-described embodiment 2, and as processed substrate Its size semiconductor wafer same as Example 2 it is adaptable to the cleaning device shown in Fig. 8, replace 65～70 DEG C and will be above-mentioned The temperature conditionss for the treatment of fluid are altered to 50～55 DEG C, in addition to above aspect, by method same as Example 2, enter Row is attached to the cleaning of the residue of etchant resist in the wafer substrates of semiconductor.Drier 27 shown in Fig. 8 adopts boxlike Rotary blower, puts into the processed substrate 7 as semiconductor wafer, then, by obtaining the centrifugal force+air-breathing of surrounding air Drying mode, carries out 5 minutes processing.Then, take out dried processed substrate 7 (semiconductor wafer), as the dotted line of in figure As shown, it is supported on the retainer 6 with rotating mechanism.Then, by retainer 6, make processed substrate 7 While rotation, from shower nozzle 5, as the symbol ↓ shown of in figure, transmitting has the process of the miniature nano bubble of ozone Liquid, while producing miniature nano bubble, is carried out.For the heating of the treatment fluid comprising ozone nanometer bubble, lead to Cross the heater-treater 4 that can be instantaneously heated, its temperature is brought up to about 60 DEG C, by by the above-mentioned place of shower nozzle 5 The temperature of reason liquid is adjusted in the range of 50～55 DEG C.
In the present embodiment, in order to investigate the difference of the cleaning performance that the presence or absence of drying steps of processed substrate 7 cause, Using the semiconductor wafer not being dried in advance, under identical cleaning condition, carry out being attached to the chip lining of semiconductor The cleaning of the residue etchant resist on bottom.The temperature of above-mentioned treatment fluid as with the occasion phase after drying steps, being carried out As same, adjust in the range of 50～55 DEG C.
As a result, using the treatment fluid employing the pure water comprising ozone nanometer bubble, not having to processed substrate 7 The occasion being dried, the time of residue fully peeling off etchant resist is within 10 minutes.May know that, relatively this situation, By drier 27, the occasion that processed substrate 7 is dried, splitting time within 7 minutes, when can shorten cleaning Between.
, the shortening of scavenging period can be sought by the drying steps using processed substrate 7.In the present invention, Also not only can adopt the drier 27 shown in Fig. 8, and adopt such as, the cleaning device shown in Fig. 6, thus, seek to be located The simplification of the drying steps of reason substrate 7.In the occasion using the cleaning device 20 shown in Fig. 6, receive in injection the miniature of ozone Before rice bubble, there is no withering state, so that the processed substrate being installed on retainer 6 is revolved at a high speed in advance Turn, thus, while using centrifugal force, remove water droplet and moisture.Now, in order to more positively carry out water droplet and moisture Remove, also can blow dry air or high temperature air from hot air apparatus 22 to above-mentioned processed substrate.Then, in modulation retainer While 6 revolution, there is the miniature nano bubble of ozone, will be in the range of 30～90 DEG C, preferably at 50～85 DEG C In the range of the treatment fluid of heating spray towards the surface of processed substrate 7.Thus, the residue of etchant resist can fully be peeled off.
(embodiment 5)
Using the treatment fluid of the bag nano bubble ozoniferous making according to above-described embodiment 2, and as processed substrate Its size semiconductor wafer same as Example 2 is it is adaptable to as shown in Fig. 1, have the cleaning of supersonic generator 8 Device, replaces 65～70 DEG C and the temperature conditionss of above-mentioned treatment fluid is altered to 50～55 DEG C, in addition to above aspect, lead to Cross method same as Example 2, carry out the cleaning of the residue of the etchant resist being attached in the wafer substrates of semiconductor.This enforcement Example is with the difference of the cleaning method shown in above-described embodiment 2：By supersonic generator 8, to processed substrate 7, apply Plus while ultrasonic activation, the treatment fluid of nano bubble ozoniferous is wrapped in injection.The frequency of ultrasonic activation is 50kHz.
As a result, in the present embodiment, the time of residue fully peeling off etchant resist is within 5 minutes.This time It is shorter than analysis in above-described embodiment 4, the occasion not applying ultrasonic activation (does not carry out the processed of prior drying Substrate 7) 10 minutes within.By, in the cleaning of processed substrate 7, apply ultrasonic activation, can by cleaning when Between shorten to about less than 1/2.
(embodiment 6)
Using the treatment fluid of the pure water of the bag nano bubble ozoniferous making according to above-described embodiment 2, and as processed Its size of substrate semiconductor wafer same as Example 2 it is adaptable to the cleaning device shown in Fig. 9, replace 65～70 DEG C and The temperature conditionss of above-mentioned treatment fluid are altered to 50～55 DEG C, in addition to above aspect, by side same as Example 2 Method, the cleaning of the residue etchant resist carrying out being attached in the wafer substrates of semiconductor.Shown in the present embodiment and above-described embodiment 2 The difference of cleaning method is：In the cleaning of processed substrate 7, by voltage applying mechanism 31, to processed substrate 7, While applied voltage, the treatment fluid of nano bubble ozoniferous is wrapped in injection.In cleaning device 28 shown in Fig. 9, power supply 30 Using irritability pulsafeeder, be arranged at the retainer 6 of the electrode 29 of vicinity of shower nozzle and the processed substrate 7 of supporting respectively with Power supply 30 (+) side and (-) side connect, be respectively set as in applied voltage and frequency 32V and 20kHz pulse voltage same When, it is carried out.
As a result, in the present embodiment, the time of residue fully peeling off etchant resist is within 3 minutes.This time It is shorter than analysis in above-described embodiment 4, the occasion not applying ultrasonic activation (does not carry out the processed of prior drying Substrate 7) 10 minutes within, by the cleaning of processed substrate 7, applied voltage, can by scavenging period shorten to less than About 1/3 degree.
The voltage application method that the present embodiment is suitable for also can be with the prior method that above-mentioned processed substrate is dried It is used in combination with least anyone in the method applying ultrasonic activation.Thus, the further shortening of scavenging period can be sought.
As above, the cleaning method of the present invention reduces the load to environment, while compared with existing method Relatively, in short time, effectively, and the stripping of residue attachment or metal or the metal of the etchant resist on substrate can positively be carried out The removal of the pollutant of oxide.In addition, the cleaning device of the present invention occurs only by the miniature nano bubble in the past In device, combine the device of the heating of miniature nano bubble for above-mentioned gas, and in order to miniature nanometer gas will be comprised The treatment fluid of bubble is ejected into processed substrate and has the shower nozzle of injection nozzle and the retainer supporting above-mentioned processed substrate, can Constitute and have simply, and the cleaning device of compact structure, in addition, by the drying in processed substrate, or injection is above-mentioned During the treatment fluid of miniature nano bubble, apply ultrasonic activation or voltage, can further improve cleaning performance.
Utilization possibility in industry
Because the cleaning method of the present invention is applied not only to glass substrate, semiconductor wafer, and apply also for other fields, than As, metal cleaning during intermetallic composite coating, the cleaning of agricultural crops, cleaning of soil etc., therefore its serviceability is extremely wide.

Claims (19)

1. a kind of cleaning method using miniature nano bubble is it is characterised in that to processed substrate spray treatment liquid, this is located Reason substrate refers to adhere to the processed substrate of etchant resist on substrate or its surface is polluted because of metal or metallic compound is located Reason substrate, the average grain diameter that this treatment fluid is comprised when being measured by freezing transmission electron microscope by ice investment exists The miniature nano bubble of the gas of below 100nm, and its temperature is maintained in the range of 30～90 DEG C, thus, carries out above-mentioned The stripping of etchant resist or the removal of above-mentioned metal or metallic compound.
2. the cleaning method using miniature nano bubble according to claim 1 is it is characterised in that micro- in above-mentioned gas In type nano bubble, by ice investment by freezing transmission electron microscope average grain diameter when measuring 30nm with Under.
3. the cleaning method using miniature nano bubble according to claim 1 and 2 is it is characterised in that in above-mentioned process In the miniature nano bubble of the gas comprising in liquid, when being measured by freezing transmission electron microscope by ice investment Density 108Individual/more than ml.
4. the cleaning method using miniature nano bubble according to any one in claims 1 to 3, its feature exists In the miniature nano bubble comprising above-mentioned gas treatment fluid be the miniature nano bubble comprising following gases treatment fluid, The miniature nano bubble of this following gas is occurred by following manner, and this following manner is：From circumference, there is two or more The cylinder of insertion aperture outside, by this insertion aperture, with pressure more than atmospheric pressure, injection comprises the solution of dissolved gas When, the mode concentrating on the center of above-mentioned cylinder according to water slug makes phase from the same plane parallel with the radial section of above-mentioned cylinder The lysate collision that the corresponding opening portion of insertion the aperture more than above-mentioned two of setting is sprayed.
5. the cleaning method using miniature nano bubble according to any one in Claims 1 to 4, its feature exists It is ozone or oxygen in above-mentioned gas, above-mentioned treatment fluid is the pure water of the miniature nano bubble comprising above-mentioned ozone or oxygen.
6. the cleaning method using miniature nano bubble according to any one in Claims 1 to 5, its feature exists It is at least gas of any one comprising in ozone or oxygen, and carbon dioxide and hydrogen peroxide in above-mentioned gas.
7. the cleaning method using miniature nano bubble according to any one in claim 1～6, its feature exists In before the fog spraying above-mentioned treatment fluid, including the step that the water droplet on above-mentioned non-process substrate and moisture are dried Suddenly.
8. the cleaning method using miniature nano bubble according to any one in claim 1～7, its feature exists In the miniature nano bubble comprising above-mentioned gas treatment fluid to the processed substrate as cleaning object, apply ultrasonic wave Sprayed while vibration.
9. the cleaning method using miniature nano bubble according to any one in claim 1～7, its feature exists In above-mentioned non-process substrate and spray above-mentioned treatment fluid shower nozzle vicinity setting electrode between applied voltage.
10. the cleaning method using miniature nano bubble according to any one in claim 1～9, its feature exists In above-mentioned treatment fluid temperature in the range of 50～85 DEG C.
A kind of 11. cleaning devices using miniature nano bubble are it is characterised in that this cleaning device includes miniature nano bubble Generator, this miniature nano-bubble generator has：
Attract the mechanism of gas and liquid respectively, with mechanism above-mentioned gas and aforesaid liquid pressurizeed and transported simultaneously；
Gas-liquid mixed groove, this gas-liquid mixed groove is used for by by the liquid comprising above-mentioned gas of transport, being mixed with new gas Close, rich in dissolved gas；
, in order to using the lysate heating by this heater, there is miniature nano bubble, this injection nozzle in injection nozzle Cylinder including cavity；Plural insertion aperture, the insertion aperture along more than the circumferential above-mentioned two of above-mentioned cylinder corresponding Opening portion is relatively arranged on the same plane parallel with the radial section of above-mentioned cylinder；Positioned at least one end of above-mentioned cylinder Miniature nano bubble jet；Above-mentioned insertion aperture is existed according to by all extended lines in the kernel of section portion of this insertion aperture The mode of the central crossbar of above-mentioned cylinder is arranged；
Shower nozzle, this shower nozzle is connected with above-mentioned injection nozzle, so as to processed substrate, injection comprises the miniature of above-mentioned gas and receives The treatment fluid of rice bubble, this processed substrate refers to adhere to the processed substrate of etchant resist or its surface on substrate because of metal or gold The processed substrate belonging to compound and polluting；
This cleaning device also includes retainer and heating arrangements, and this retainer is oppositely arranged with shower nozzle with above-mentioned, so that in supporting State processed substrate, this heating arrangements is used in the range of 30～90 DEG C to the miniature nano bubble comprising above-mentioned gas Treatment fluid is heated.
12. cleaning devices using miniature nano bubble according to claim 11 are it is characterised in that above-mentioned heater is Arranged to heat to the lysate of the state of the above-mentioned gas-liquid mixed being in after sending from above-mentioned gas-liquid mixed groove Heater.
13. cleaning devices using miniature nano bubble according to claim 12 are it is characterised in that above-mentioned heater exists The position of at least anyone in the bottom and sidepiece of above-mentioned gas-liquid mixed groove, is arranged as heater.
14. cleaning devices using miniature nano bubble according to any one in claim 11～13, its feature It is that this cleaning device also includes drier, this drier makes water droplet and moisture drying on above-mentioned non-process substrate.
15. cleaning devices using miniature nano bubble according to any one in claim 11～14, its feature It is above-mentioned retainer and connect with the supersonic generator that ultrasonic activation to above-mentioned processed substrate, can be applied.
16. cleaning devices using miniature nano bubble according to any one in claim 11～14, its feature It is have in the retainer supporting above-mentioned non-process substrate and the electricity in the setting of the vicinity of the shower nozzle spraying above-mentioned treatment fluid Between pole, the voltage applying mechanism of applied voltage.
17. cleaning devices using miniature nano bubble according to any one in claim 11～16, its feature It is that above-mentioned heater also includes the heater for being heated at least anyone in above-mentioned shower nozzle and above-mentioned retainer Or heat blower.
18. cleaning devices using miniature nano bubble according to any one in claim 11～17, its feature It is that above-mentioned heater also includes air conditioner, this use in refrigeration system in wrapping above-mentioned shower nozzle and above-mentioned retainer as a chamber Enclose, by the internal control in above-mentioned chamber in 30～90 DEG C of temperature.
19. cleaning devices using miniature nano bubble according to any one in claim 11～18, its feature It is temperature during above-mentioned heating in the range of 50～85 DEG C.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009170709A (en) * 2008-01-17 2009-07-30 Shibaura Mechatronics Corp Apparatus and method for processing substrate
JP2011088979A (en) * 2009-10-21 2011-05-06 Panasonic Electric Works Co Ltd Cleaning liquid, cleaning method, and cleaning liquid production device
WO2012090815A1 (en) * 2010-12-28 2012-07-05 シャープ株式会社 Resist removal device and resist removal method
JP2013166143A (en) * 2012-01-18 2013-08-29 Sigma Technology Kk Method, generating nozzle and generator for generating micro/nanobubble
CN103579053A (en) * 2012-08-09 2014-02-12 芝浦机械电子株式会社 Cleaning solution producing apparatus and method, and substrate cleaning apparatus and method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW294821B (en) * 1994-09-09 1997-01-01 Tokyo Electron Co Ltd
JP2008192630A (en) * 2006-03-20 2008-08-21 Eiji Matsumura Electromechanical component cleaning method and electromechanical component cleaning device
JP2008300429A (en) * 2007-05-29 2008-12-11 Toshiba Corp Method and apparatus for semiconductor substrate cleaning, and apparatus for mixing air bubbles into liquid
JP2009072649A (en) * 2007-09-18 2009-04-09 Univ Of Tokyo Nanobubble solution, method and apparatus for producing nanobubble solution, and method of using nanobubble solution
JP2009111093A (en) * 2007-10-29 2009-05-21 Covalent Materials Corp Manufacturing method of semiconductor substrate
JP5153305B2 (en) 2007-11-20 2013-02-27 芝浦メカトロニクス株式会社 Resist film peeling apparatus and peeling method
JP5448385B2 (en) * 2008-07-30 2014-03-19 芝浦メカトロニクス株式会社 Substrate processing apparatus and substrate processing method
JP5342220B2 (en) * 2008-12-05 2013-11-13 芝浦メカトロニクス株式会社 Substrate processing equipment
JP2010238992A (en) 2009-03-31 2010-10-21 Sharp Corp Liftoff method and method of manufacturing film transistor
JP2011129743A (en) * 2009-12-18 2011-06-30 Shibaura Mechatronics Corp Substrate processing method and apparatus
WO2011101936A1 (en) * 2010-02-18 2011-08-25 シャープ株式会社 Etching method and etching device
US20130204121A1 (en) * 2010-07-16 2013-08-08 Thomas Lars Andresen Nanoparticle-guided radiotherapy
KR101207384B1 (en) * 2011-03-25 2012-12-04 (주) 엠에스피 Method and apparatus for cleaning of semiconductor wafer using micro nano-bubble
JP2013146714A (en) * 2012-01-23 2013-08-01 Idec Corp Microscopic bubble generation device
JP2014090031A (en) 2012-10-29 2014-05-15 Sharp Corp Etching method and etching device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009170709A (en) * 2008-01-17 2009-07-30 Shibaura Mechatronics Corp Apparatus and method for processing substrate
JP2011088979A (en) * 2009-10-21 2011-05-06 Panasonic Electric Works Co Ltd Cleaning liquid, cleaning method, and cleaning liquid production device
WO2012090815A1 (en) * 2010-12-28 2012-07-05 シャープ株式会社 Resist removal device and resist removal method
JP2013166143A (en) * 2012-01-18 2013-08-29 Sigma Technology Kk Method, generating nozzle and generator for generating micro/nanobubble
CN103579053A (en) * 2012-08-09 2014-02-12 芝浦机械电子株式会社 Cleaning solution producing apparatus and method, and substrate cleaning apparatus and method

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109415686B (en) * 2016-05-13 2023-02-21 株式会社希古玛科技 Aqueous solution for administration to living body and method for producing the same
CN109415686A (en) * 2016-05-13 2019-03-01 希玛科技有限公司 Aqueous solution of living body and preparation method thereof can be administered into
CN111050925A (en) * 2017-08-31 2020-04-21 佳能株式会社 Method for producing ultrafine bubbles, apparatus for producing ultrafine bubble-containing liquid, method for producing ultrafine bubble-containing liquid, and ultrafine bubble-containing liquid
US11766685B2 (en) 2017-08-31 2023-09-26 Canon Kabushiki Kaisha Ultrafine bubble generating method, ultrafine bubble-containing liquid manufacturing apparatus and manufacturing method, and ultrafine bubble-containing liquid
CN110534476A (en) * 2018-05-24 2019-12-03 半导体元件工业有限责任公司 Tube core cleaning systems and correlation technique
CN108905663A (en) * 2018-09-19 2018-11-30 佛山市通海卫浴设备有限公司 It can automatic pollution discharge anticlogging efficiently micro-nano bubble generator and method for generation
CN111610698A (en) * 2019-02-22 2020-09-01 北京北方华创微电子装备有限公司 Photoresist removing device and method for removing photoresist
US11759723B2 (en) 2019-02-28 2023-09-19 Canon Kabushiki Kaisha Ultrafine bubble generating method, ultrafine bubble generating apparatus, and ultrafine bubble-containing liquid
CN111617501A (en) * 2019-02-28 2020-09-04 佳能株式会社 Ultrafine bubble generating method, ultrafine bubble generating device, and ultrafine bubble-containing liquid
CN113632012A (en) * 2019-03-22 2021-11-09 株式会社斯库林集团 Substrate processing method
CN113632012B (en) * 2019-03-22 2024-12-10 株式会社斯库林集团 Substrate processing method
TWI837412B (en) * 2019-08-29 2024-04-01 日商斯庫林集團股份有限公司 Substrate processing method
CN112058752A (en) * 2020-08-13 2020-12-11 刘雄 Cleaning device for heat treatment workpiece
CN112723565A (en) * 2020-12-11 2021-04-30 纳美智创(杭州)科技有限责任公司 Micro-nano aeration system for water purification
CN113293099A (en) * 2021-06-01 2021-08-24 中国科学院重庆绿色智能技术研究院 Device for researching interaction between micro-nano bubbles and cells
CN113293099B (en) * 2021-06-01 2023-12-22 中国科学院重庆绿色智能技术研究院 Methods to study the interaction between micro and nanobubbles and cells
CN115739886A (en) * 2022-12-15 2023-03-07 上海至纯洁净系统科技股份有限公司 Megasonic cleaning capacity control method

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