CN106449787A - Solar cell spin-coated with borate diffusion layer and production process of solar cell - Google Patents

Abstract

The invention discloses a solar cell with a spin-coated borate diffusion layer, which includes an N-type silicon substrate, and the surface field of the N-type silicon substrate is sequentially laid with a B-type diffusion layer and an insulating layer, wherein, B The material of the type diffusion layer is borate, the material of the insulating layer is a SiNx film, and the upper surface of the insulating layer is provided with a P-type metal electrode; Technology; the solar cell of the spin-coated borate diffusion layer designed by the present invention has advantages such as low diffusion temperature, short time, simple technique and environmental friendliness, therefore, this diffusion process has advantages in preparing the emitter electrode of N-type solar cell Broad application prospects.

Description

A solar cell with spin-coated borate diffusion layer and its manufacturing process

technical field

The invention relates to the technical field of solar cell production, in particular to a solar cell with a spin-coated borate diffusion layer and a manufacturing process thereof.

Background technique

P-type crystalline silicon still has attenuation in ground applications, while the performance of n-type crystalline silicon is more stable; as early as 1973, H.Fischer et al. found that the newly fabricated P-type boron-doped Cz silicon solar cells would be degraded under light. There is obvious performance attenuation; in 1997, J.Schmidt et al confirmed that the light-induced attenuation of boron-doped Cz silicon is caused by boron-oxygen pairs; since the boron content in n-type phosphorus-doped Cz silicon is extremely low, the boron-oxygen The resulting light-induced attenuation is not obvious; this has been verified by many experimental results. On the other hand, among solar-grade silicon materials, n-type crystalline silicon has a longer minority carrier lifetime than p-type crystalline silicon.

According to the report of J.Zhao et al., the minority carrier lifetime of n-type Cz silicon with different volume resistivity is above 1ms, much higher than that of p-type Cz silicon, and even longer than that of p-type Fz silicon; according to A .Cuevas et al. reported that the minority carrier lifetime of n-type polycrystalline silicon reaches 100us, which can be increased to 1ms after phosphorus gettering; The capture cross-section of n-type silicon is large, so in the case of low injection, n-type silicon has a longer minority carrier life than p-type silicon; the above advantages of n-type crystalline silicon have aroused the interest of researchers, making n-type crystalline silicon solar cells in structure and Technology has achieved rapid development.

According to the composition and formation method of the emitter, n-type solar cells can be divided into three types: aluminum emitter, boron emitter and amorphous silicon/crystalline silicon heterojunction solar cells; according to the position of the emitter, n-type solar cells It can be divided into two types: front emitter and back emitter; for aluminum back emitter, many researchers have carried out detailed discussion and research, and this article does not discuss the research.

Now, we mainly study boron diffusion method to prepare boron front-emitter solar cells; since the boiling point of B2O3 is higher than that of P2O5, it is difficult to control the uniformity of the diffusion junction of solid boron source, and liquid BBr3 is usually used as boron source for diffusion in production, but This process has high requirements on equipment, and the diffusion source used is toxic, and the gas emitted by diffusion needs special treatment; researchers have also developed a diffusion process through silk screen and spin-coated boron paste, but usually requires the use of special slurry.

Boron hydrochloric acid has the advantages of being cheap and non-toxic, so some researchers have also developed related processes using it as a diffusion source, but these diffusion processes usually require high temperature diffusion at 1000°C for 1 hour to complete; this paper mainly uses silicon wafers spin-coated with boron hydrochloric acid As a diffusion source, boron hydrochloric acid is used for diffusion to fabricate a boron front-emitter n-type silicon solar cell.

Contents of the invention

The technical problem to be solved by the present invention is to overcome the shortcomings of the prior art and provide a solar cell with a spin-coated borate diffusion layer and a manufacturing process thereof.

In order to solve the above technical problems, the present invention provides a solar cell with a spin-coated borate diffusion layer, including an N-type silicon substrate, and the surface field of the N-type silicon substrate is sequentially laid with a B-type diffusion layer and an insulating layer from bottom to top. layer, wherein the material of the B-type diffusion layer is borate, the material of the insulating layer is a SiNx film, and the upper surface of the insulating layer is provided with a P-type metal electrode;

The back surface field of the n-type silicon substrate is provided with an n-type metal electrode.

The technical scheme further defined in the present invention is:

Further, in the solar cell of the aforementioned spin-coated borate diffusion layer, a distance is left between the P-type metal electrode and the edge of the N-type silicon substrate, and a distance is left between the n-type metal electrode and the edge of the N-type silicon substrate. distance.

In the aforementioned solar cell with a spin-coated borate diffusion layer, the SiNx layer film is a stacked film composed of silicon nitride and silicon dioxide.

In the aforementioned solar cell with a spin-coated borate diffusion layer, the silicon dioxide layer is located under the silicon nitride layer, the thickness of the silicon dioxide layer is 41-43nm, and the thickness of the silicon nitride layer is 80-83nm .

The present invention also designs a kind of manufacturing process of the solar cell of spin-coating borate diffusion layer, selects N-type silicon substrate as base, comprises following specific steps:

① Coat the boric hydrochloric acid solution on the surface field of the N-type silicon substrate, put the N-type silicon substrate into a tube furnace for diffusion, and feed N ₂ gas as a protection. The flow rate of N ₂ gas is 11slm, and the diffusion The temperature is 910-930°C, and the diffusion time is 11-13min to form a B-type diffusion layer;

_The preparation of the boron hydrochloric acid solution is as follows: dissolving B2O5 into dilute hydrochloric acid to form a _13-16wt % solution;

②The PCLO3 diffusion method is used on the back surface field of the N-type silicon substrate, the diffusion flow rate is controlled to 1000 sccm, the diffusion time is 9-11min, and the diffusion temperature is 880-900°C;

③Use nitric acid oxidation on the upper surface of the B-type diffusion layer to make a silicon dioxide film with a thickness of 41-43nm, and use PECV D to deposit a silicon nitride film with a thickness of 80-83nm on the silicon dioxide film. The silicon layer film is used as a passivation layer, the silicon nitride layer is used as an anti-reflection layer, and the reflectivity is controlled to be less than 8%, and the passivation layer and the anti-reflection layer are used together as an insulating layer;

④ Print Ag/Al paste on the insulating layer to make P-type metal electrodes; field-print Ag paste on the back surface of N-type silicon substrate as n-type metal electrodes. The manufacturing process of the aforementioned solar cell with a spin-coated borate diffusion layer selects an N-type silicon substrate as a base, and includes the following specific steps:

① Coat the boric hydrochloric acid solution on the surface field of the N-type silicon substrate, put the N-type silicon substrate into a tube furnace for diffusion, and feed N ₂ gas as a protection. The flow rate of N ₂ gas is 11slm, and the diffusion The temperature is 920°C, the diffusion time is 12 minutes, the uniformity in the control tube is less than 10%, and the uniformity in the control sheet is less than 7%; a B-type diffusion layer is formed;

The preparation of the boron hydrochloric acid solution is: dissolving B ₂ O ₅ in dilute hydrochloric acid to form a 15wt% solution;

②The PCLO3 diffusion method is used on the back surface field of the N-type silicon substrate, the diffusion flow rate is controlled to 1000 sccm, the diffusion time is 9-11min, and the diffusion temperature is 880-900°C;

③Use nitric acid oxidation on the upper surface of the B-type diffusion layer to make a silicon dioxide film with a thickness of 42nm, and use PECVD to deposit a silicon nitride film with a thickness of 82nm on the silicon dioxide film, and the silicon dioxide film is used as a passivation film. The silicon nitride layer is used as an anti-reflection layer, and the reflectivity is controlled to be less than 8%, and the passivation layer and the anti-reflection layer are used together as an insulating layer;

④ Print Ag/Al paste on the insulating layer to make P-type metal electrodes; field-print Ag paste on the back surface of N-type silicon substrate as n-type metal electrodes. The manufacturing process of the aforementioned solar cell with a spin-coated borate diffusion layer selects an N-type silicon substrate as a base, and includes the following specific steps:

① Coat the boric hydrochloric acid solution on the surface field of the N-type silicon substrate, put the N-type silicon substrate into a tube furnace for diffusion, and feed N ₂ gas as a protection. The flow rate of N ₂ gas is 11slm, and the diffusion The temperature is 920°C, the diffusion time is 12 minutes, the uniformity in the control tube is less than 10%, and the uniformity in the control sheet is less than 7%; a B-type diffusion layer is formed;

The preparation of the boron hydrochloric acid solution is: dissolving B ₂ O ₅ in dilute hydrochloric acid to form a 15wt% solution;

②Using the PCLO3 diffusion method on the back surface field of the N-type silicon substrate, controlling the diffusion flow rate to 1000sccm, the diffusion time to 10min, and the diffusion temperature to 890°C;

③Use nitric acid oxidation on the upper surface of the B-type diffusion layer to make a silicon dioxide film with a thickness of 42nm, and use PECVD to deposit a silicon nitride film with a thickness of 81nm on the silicon dioxide film. The silicon nitride layer is used as an anti-reflection layer, and the reflectivity is controlled to be less than 8%, and the passivation layer and the anti-reflection layer are used together as an insulating layer;

④ Print Ag/Al paste on the insulating layer to make P-type metal electrodes; field-print Ag paste on the back surface of N-type silicon substrate as n-type metal electrodes. The manufacturing process of the solar cell of the aforementioned spin-coated borate diffusion layer is coated with an anti-icing adhesion emulsion on the side surface of the N-type silicon substrate, and the mass percent composition of the anti-icing adhesion emulsion is: 4- Methylcyclohexyl isocyanate: 7-9%, Urethane: 11-13%, Alpha-linolenic acid: 3.3-3.5%, Ethoxylated bisphenol A dimethacrylate: 1.3-1.5%, Trimethylol Propanyl trimethacrylate: 4.5-4.7%, Benzoyl peroxide: 3.2-3.4%, Butyl acrylate: 2.3-2.5%, 2-Hydroxy-1,2-diphenylethanone: 2.7-2.9 %, antimony-doped tin oxide nanocrystal: 2.8-3%, nano-titanium dioxide: 4.3-4.5%, nano-silicon carbide: 2.5-2.7%, ethylene-vinyl acetate: 2.5-2.7%, polyoxyethylene fatty alcohol ether: 3.7 -3.9%, polydimethylsiloxane: 1.4-1.6%, polyether modified silicone oil: 1.1-1.3%, co-solvent: 5.4-5.6%, adhesion promoter: 9.3-9.5%, organic fluorine water repellent :margin.

In the manufacturing process of the aforementioned solar cell with spin-coated borate diffusion layer, the mass percentage components of the anti-icing adhesion emulsion are: 4-methylcyclohexyl isocyanate: 8%, urethane: 12%, α- Linolenic Acid: 3.3%, Ethoxylated Bisphenol A Dimethacrylate: 1.3%, Trimethylolpropane Trimethacrylate: 4.6%, Benzoyl Peroxide: 3.3%, Butyl Acrylate: 2.4%, 2-Hydroxy-1,2-diphenylethanone: 2.8%, antimony-doped tin oxide nanocrystals: 2.9%, nano-titanium dioxide: 4.4%, nano-silicon carbide: 2.6%, ethylene-vinyl acetate: 2.7%, poly Oxyethylene fatty alcohol ether: 3.8%, polydimethylsiloxane: 1.5%, polyether modified silicone oil: 1.2%, cosolvent: 5.5%, adhesion promoter: 9.4%, organic fluorine water repellent: balance .

The beneficial effects of the present invention are:

In the present invention, the N-type silicon substrate is put into a tube furnace for diffusion, and N ₂ gas is introduced as protection, the flow rate of N ₂ gas is 11slm, the diffusion temperature is 920°C, the diffusion time is 12min, and the uniformity in the control tube is less than 10%, control the uniformity in the chip to be less than 7%, as shown in Table 1, the obtained average square resistance is 70.2Ω/sq, the deviation is ≤3Ω/sq; it has low diffusion temperature and short time with solid boron diffusion and liquid boron diffusion , simple process and environmental friendliness, etc., therefore, this diffusion process has broad application prospects in preparing the emitter of N-type solar cells. In addition, this diffusion process can also be applied to the back field of P-type batteries.

Table 1

The first temperature zone Second temperature zone The third temperature zone The fourth temperature zone fifth temperature zone 67.5 71.2 69 70.5 70.1 70.2 73.5 68.7 70.6 68.9 69.3 69.5 68.9 70.9 69 70.1 70 70.3 69 69.3 68.2 70.1 71 68.5 70.2 average value 69.06 70.86 69.58 69.9 69.5

The anti-icing adhesion emulsion of the present invention uses its scientific formula, after spraying the adhesion emulsion on the side surface of the N-type silicon substrate, the adhesion emulsion will undergo secondary copolymerization and crosslinking under the action of outdoor ultraviolet light reaction to generate a protective film with a network structure, which greatly improves the bonding strength, strong peel strength and tear strength of the side surface of the adhesion emulsion and the N-type silicon substrate, thereby solving the problem of anti-icing adhesion emulsion and N-type silicon substrate. The technical problem that the side surface of the silicon substrate is not easy to combine makes the side surface of the N-type silicon substrate have excellent water repellency, waterproof antifreeze and anti-icing performance, so that it can still maintain excellent performance when used in rainy and cold environments;

According to the test, the solar cell of the spin-coated borate diffusion layer of the present invention is placed in a rainstorm, and the water repellency is 3-5 times that of a common solar cell; Placed in an environment of minus 1-15°C, the outer surface of the solar cell is not easy to freeze after rain;

In addition, in the adhesive emulsion of the present invention, the addition of antimony-doped tin oxide nanocrystals, nano-titanium dioxide, and nano-silicon carbide can make the side surface of the N-type silicon substrate have good antistatic properties and absorption and heat insulation properties, and It has anti-mildew, anti-fouling and anti-fouling properties, and can also improve its wear resistance, obtaining unexpected technical effects.

Description of drawings

Fig. 1 is the structural representation of the solar cell of spin coating borate diffusion layer designed by the present invention;

Among them, 1-P-type metal electrode, 2-insulating layer, 3-B-type diffusion layer, 4-N-type silicon substrate, 5-n-type metal electrode, 6-n-type metal electrode and N-type silicon substrate edge distance , 7-The distance between the P-type metal electrode and the edge of the N-type silicon substrate.

detailed description

Example 1

As shown in Figure 1, a solar cell with a spin-coated borate diffusion layer provided in this embodiment includes an N-type silicon substrate 4, and the surface field of the N-type silicon substrate 4 is sequentially laid with B-type silicon substrates from bottom to top. The diffusion layer 3 and the insulating layer 2, wherein, the material of the B-type diffusion layer 3 is borate, the material of the insulating layer 2 is a SiNx film, and the upper surface of the insulating layer 2 is provided with a P-type metal electrode 1;

The back surface field of the N-type silicon substrate 4 is provided with an n-type metal electrode 5 .

In the solar cell of the aforementioned spin-coated borate diffusion layer, a distance is left between the P-type metal electrode 1 and the edge of the N-type silicon substrate 4, and a distance is left between the n-type metal electrode 5 and the edge of the N-type silicon substrate 4. There is a distance.

In the aforementioned solar cell with a spin-coated borate diffusion layer, the SiNx layer film is a stacked film composed of silicon nitride and silicon dioxide.

In the aforementioned solar cell with a spin-coated borate diffusion layer, the silicon dioxide layer is located under the silicon nitride layer, the thickness of the silicon dioxide layer is 41-43nm, and the thickness of the silicon nitride layer is 80-83nm .

Example 2

This embodiment provides a manufacturing process for a solar cell with a spin-coated borate diffusion layer, using an N-type silicon substrate 4 as the substrate, including the following specific steps:

① Coat the boric hydrochloric acid solution on the surface field of the N-type silicon substrate 4, put the N-type silicon substrate 4 into the tube furnace for diffusion, and feed _N2 gas as protection, and the flow rate of _N2 gas is 11slm , the diffusion temperature is 920°C, the diffusion time is 12min, the uniformity in the tube is controlled to be less than 10%, and the uniformity in the sheet is controlled to be less than 7%; a B-type diffusion layer 3 is formed;

The preparation of the boron hydrochloric acid solution is: dissolving B ₂ O ₅ in dilute hydrochloric acid to form a 15wt% solution;

②The PCLO3 diffusion method is adopted in the back surface field of the N-type silicon substrate 4, the diffusion flow rate is controlled to 1000 sccm, the diffusion time is 9-11 min, and the diffusion temperature is 880-900°C;

③The upper surface of the B-type diffusion layer 3 is oxidized with nitric acid to make a silicon dioxide film with a thickness of 42nm, and a silicon nitride film with a thickness of 82nm is deposited on the silicon dioxide film by PECVD, and the silicon dioxide film is used as The passivation layer, the silicon nitride layer is used as the anti-reflection layer, and the reflectivity is controlled to be less than 8%, and the passivation layer and the anti-reflection layer are used together as the insulating layer 2;

④ Printing Ag/Al paste on the insulating layer 2 to make a P-type metal electrode 1 ; printing Ag paste on the back surface of the N-type silicon substrate 4 as an n-type metal electrode 5 .

Example 3

This embodiment provides a manufacturing process for a solar cell with a spin-coated borate diffusion layer, using an N-type silicon substrate 4 as the substrate, including the following specific steps:

① Coat the boric hydrochloric acid solution on the surface field of the N-type silicon substrate 4, put the N-type silicon substrate 4 into the tube furnace for diffusion, and feed _N2 gas as protection, and the flow rate of _N2 gas is 11slm , the diffusion temperature is 920°C, the diffusion time is 12min, the uniformity in the tube is controlled to be less than 10%, and the uniformity in the sheet is controlled to be less than 7%; a B-type diffusion layer 3 is formed;

The preparation of the boron hydrochloric acid solution is: dissolving B ₂ O ₅ in dilute hydrochloric acid to form a 15wt% solution;

②The PCLO3 diffusion method is adopted in the back surface field of the N-type silicon substrate 4, the diffusion flow rate is controlled to 1000 sccm, the diffusion time is 10 min, and the diffusion temperature is 890°C;

③The upper surface of the B-type diffusion layer 3 is oxidized with nitric acid to make a silicon dioxide film with a thickness of 42nm, and a silicon nitride film with a thickness of 81nm is deposited on the silicon dioxide film by PECVD, and the silicon dioxide film is used as The passivation layer, the silicon nitride layer is used as the anti-reflection layer, the reflectivity is controlled to be less than 8%, and the passivation layer and the anti-reflection layer are used together as the insulating layer 2;

④ Printing Ag/Al paste on the insulating layer 2 to make a P-type metal electrode 1 ; printing Ag paste on the back surface of the N-type silicon substrate 4 as an n-type metal electrode 5 .

In this embodiment, the anti-icing adhesion emulsion is coated on the side surface of the N-type silicon substrate 4. The mass percentage composition of the anti-icing adhesion emulsion is: 4-methylcyclohexyl isocyanate: 8%, urethane Esters: 12%, Alpha-Linolenic Acid: 3.3%, Ethoxylated Bisphenol A Dimethacrylate: 1.3%, Trimethylolpropane Trimethacrylate: 4.6%, Benzoyl Peroxide: 3.3%, Butyl Acrylate: 2.4%, 2-Hydroxy-1,2-Diphenylethanone: 2.8%, Antimony Doped Tin Oxide Nanocrystalline: 2.9%, Nano Titanium Dioxide: 4.4%, Nano Silicon Carbide: 2.6%, Ethylene- Vinyl acetate: 2.7%, polyoxyethylene fatty alcohol ether: 3.8%, polydimethylsiloxane: 1.5%, polyether modified silicone oil: 1.2%, cosolvent: 5.5%, adhesion promoter: 9.4%, Organic fluorine water repellent: balance.

The above embodiments are only to illustrate the technical ideas of the present invention, and can not limit the protection scope of the present invention with this. All technical ideas proposed in accordance with the present invention, any changes made on the basis of technical solutions, all fall within the protection scope of the present invention. Inside.

Claims (9)

1. a kind of solar cell of spin coating borate diffusion layer is it is characterised in that include N-type silicon substrate（4）, described N-type silicon Substrate（4）Surface field be equipped with Type B diffusion layer from bottom to top successively（3）And insulating barrier（2）, wherein, described Type B diffusion layer （3）Material be borate, described insulating barrier（2）Material be SiNx layer film, described insulating barrier（2）Upper surface be provided with P Type metal electrode（1）；

Described N-type silicon substrate（4）Back surface field be provided with N-shaped metal electrode（5）.

2. the solar cell of spin coating borate diffusion layer according to claim 1 is it is characterised in that described p-type metal Electrode（1）With N-type silicon substrate（4）Edge between leave distance, described N-shaped metal electrode（5）With N-type silicon substrate（4）Side Distance is left between edge.

3. the solar cell of spin coating borate diffusion layer according to claim 2 is it is characterised in that described SiNx layer film Stack membrane for silicon nitride and silica composition.

4. the solar cell of spin coating borate diffusion layer according to claim 3 is it is characterised in that described silica Tunic is located at the lower section of silicon nitride tunic, and the thickness of described silica tunic is 41-43nm, the thickness of described silicon nitride tunic For 80-83nm.

5. a kind of manufacture craft of the solar cell of spin coating borate diffusion layer is it is characterised in that select N-type silicon substrate（4） As substrate, comprise the following specific steps that：

Boron salt acid solution is coated in N-type silicon substrate（4）Surface field, and by N-type silicon substrate（4）Put in tube furnace and carry out Diffusion, is passed through N₂Gas is as protection, N₂The flow of gas is 11slm, and diffusion temperature is 910-930 DEG C, and diffusion time is 11- 13min, forms Type B diffusion layer（3）；

Being prepared as of described boron salt acid solution：By B₂O₅It is dissolved into the solution forming 13-16wt% in watery hydrochloric acid；

In N-type silicon substrate（4）Back surface field adopt PCLO3 method of diffusion, control diffusion flow 1000sccm, during diffusion Between be 9-11min, diffusion temperature 880-900 DEG C；

In Type B diffusion layer（3）Upper surface adopt nitric acid oxidation make thickness be 41-43nm silica tunic, two The silicon nitride tunic that PECVD deposit thickness is 80-83nm is adopted on silica tunic, described silica tunic is as passivation Layer, described silicon nitride layer, as antireflection layer, controls reflectivity to be less than 8%, passivation layer and antireflection layer are collectively as insulating barrier （2）；

In insulating barrier（2）Upper printing Ag/Al slurry, makes p-type metal electrode（1）；In N-type silicon substrate（4）Back surface field print Brush Ag starches as N-shaped metal electrode（5）.

6. the manufacture craft of the solar cell of spin coating borate diffusion layer according to claim 5 is it is characterised in that select Use N-type silicon substrate（4）As substrate, comprise the following specific steps that：

Boron salt acid solution is coated in N-type silicon substrate（4）Surface field, and by N-type silicon substrate（4）Put in tube furnace and carry out Diffusion, is passed through N₂Gas is as protection, N₂The flow of gas is 11slm, and diffusion temperature is 920 DEG C, and diffusion time is 12min, control In tubulation, the uniformity is less than 10%, and in control sheet, the uniformity is less than 7%；Form Type B diffusion layer（3）；

Being prepared as of described boron salt acid solution：By B₂O₅It is dissolved into the solution forming 15wt% in watery hydrochloric acid；

In N-type silicon substrate（4）Back surface field adopt PCLO3 method of diffusion, control diffusion flow 1000sccm, during diffusion Between be 9-11min, diffusion temperature 880-900 DEG C；

In Type B diffusion layer（3）Upper surface adopt nitric acid oxidation make thickness be 42nm silica tunic, in titanium dioxide On silicon membrane layer adopt PECVD deposit thickness be 82nm silicon nitride tunic, described silica tunic as passivation layer, described nitrogen SiClx layer, as antireflection layer, controls reflectivity to be less than 8%, passivation layer and antireflection layer are collectively as insulating barrier（2）；

In insulating barrier（2）Upper printing Ag/Al slurry, makes p-type metal electrode（1）；In N-type silicon substrate（4）Back surface field print Brush Ag starches as N-shaped metal electrode（5）.

7. the manufacture craft of the solar cell of spin coating borate diffusion layer according to claim 5 is it is characterised in that select Use N-type silicon substrate（4）As substrate, comprise the following specific steps that：

Boron salt acid solution is coated in N-type silicon substrate（4）Surface field, and by N-type silicon substrate（4）Put in tube furnace and carry out Diffusion, is passed through N₂Gas is as protection, N₂The flow of gas is 11slm, and diffusion temperature is 920 DEG C, and diffusion time is 12min, control In tubulation, the uniformity is less than 10%, and in control sheet, the uniformity is less than 7%；Form Type B diffusion layer（3）；

Being prepared as of described boron salt acid solution：By B₂O₅It is dissolved into the solution forming 15wt% in watery hydrochloric acid；

In N-type silicon substrate（4）Back surface field adopt PCLO3 method of diffusion, control diffusion flow 1000sccm, during diffusion Between be 10min, 890 DEG C of diffusion temperature；

In Type B diffusion layer（3）Upper surface adopt nitric acid oxidation make thickness be 42nm silica tunic, in titanium dioxide On silicon membrane layer adopt PECVD deposit thickness be 81nm silicon nitride tunic, described silica tunic as passivation layer, described nitrogen SiClx layer, as antireflection layer, controls reflectivity to be less than 8%, passivation layer and antireflection layer are collectively as insulating barrier（2）；

In insulating barrier（2）Upper printing Ag/Al slurry, makes p-type metal electrode（1）；In N-type silicon substrate（4）Back surface field print Brush Ag starches as N-shaped metal electrode（5）.

8. the system of the solar cell of spin coating borate diffusion layer according to any one claim in claim 5-7 Make technique it is characterised in that in described N-type silicon substrate（4）Side surface on coat anti-anti-ice cover attachment emulsion, described anti-anti- cover The mass percent group that ice adheres to emulsion is divided into：4- isocyanatomethyl：7-9%, urethanes：11-13%, α- Leukotrienes：3.3-3.5%, ethoxylated bisphenol A dimethylacrylate：1.3-1.5%, trimethylol propane trimethyl acrylic acid Ester：4.5-4.7%, benzoyl peroxide：3.2-3.4%, butyl acrylate：2.3-2.5%, 2- hydroxyl -1,2- diphenylethan： 2.7-2.9%, antimony doped stannum oxide nano-crystal：2.8-3%, nano titanium oxide：4.3-4.5%, nanometer silicon carbide：2.5-2.7%, Ethene-vinyl acetate：2.5-2.7%, polyoxyethylene aliphatic alcohol ether：3.7-3.9%, dimethyl silicone polymer：1.4-1.6%, polyethers Modified silicon oil：1.1-1.3%, cosolvent：5.4-5.6%, adhesion promoter：9.3-9.5%, organic fluorine waterproof agent：Surplus.

9. the manufacture craft of the solar cell of spin coating borate diffusion layer according to claim 1 is it is characterised in that institute The mass percent group stating anti-anti-ice cover attachment emulsion is divided into：4- isocyanatomethyl：8%, urethanes： 12%, alpha-linolenic acid：3.3%, ethoxylated bisphenol A dimethylacrylate：1.3%, trimethylol-propane trimethacrylate： 4.6%, benzoyl peroxide：3.3%, butyl acrylate：2.4%, 2- hydroxyl -1,2- diphenylethan：2.8%, Sb doped aoxidizes Tin is nanocrystalline：2.9%, nano titanium oxide：4.4%, nanometer silicon carbide：2.6%, ethene-vinyl acetate：2.7%, polyoxyethylene fat Fat alcohol ether：3.8%, dimethyl silicone polymer：1.5%, polyether modified silicon oil：1.2%, cosolvent：5.5%, adhesion promoter： 9.4%, organic fluorine waterproof agent：Surplus.