CN106449428A - Chip encapsulation process - Google Patents
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- CN106449428A CN106449428A CN201610934371.6A CN201610934371A CN106449428A CN 106449428 A CN106449428 A CN 106449428A CN 201610934371 A CN201610934371 A CN 201610934371A CN 106449428 A CN106449428 A CN 106449428A
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Abstract
本发明提供了一种芯片封装工艺,该工艺包括以下步骤:在载板上形成第一金属图案层;将芯片设置在第一金属图案层上,其中,芯片包括设有连接凸点的第一侧面和未设置连接凸点的第二侧面,第二侧面与第一金属图案层接触;在载板上设置第一封料层,以包覆第一金属图案层和芯片,并使第一封料层的表面裸露连接凸点;在第一封料层上形成第二金属图案层,并使第二金属图案层的至少部分区域与连接凸点接触;在第一封料层上设置第二封料层,第二封料层的表面裸露第二金属图案层;拆除载板,以使第一封料层的表面裸露第一金属图案层。本发明能够及时将芯片的热量散发出去,从而维护芯片的性能。
The invention provides a chip packaging process, which comprises the following steps: forming a first metal pattern layer on a carrier plate; disposing a chip on the first metal pattern layer, wherein the chip includes a first metal pattern layer provided with connection bumps. The side and the second side that are not provided with connection bumps, the second side is in contact with the first metal pattern layer; the first encapsulation layer is arranged on the carrier to cover the first metal pattern layer and the chip, and the first encapsulation The connection bumps are exposed on the surface of the material layer; a second metal pattern layer is formed on the first sealing material layer, and at least part of the second metal pattern layer is in contact with the connection bumps; a second metal pattern layer is arranged on the first sealing material layer For the sealing material layer, the surface of the second sealing material layer exposes the second metal pattern layer; the carrier board is removed, so that the surface of the first sealing material layer exposes the first metal pattern layer. The invention can dissipate the heat of the chip in time, thereby maintaining the performance of the chip.
Description
技术领域technical field
本发明涉及芯片封装技术领域,特别是涉及一种芯片封装工艺。The invention relates to the technical field of chip packaging, in particular to a chip packaging process.
背景技术Background technique
随着集成电路技术的不断发展,电子产品越来越向小型化、智能化以及高可靠性方向发展,而集成电路封装直接影响着集成电路、电子模块乃至整机性能,在集成电路晶片尺寸逐步缩小、集成度不断提高的情况下,电子工业对集成电路封装救赎提出了越来越高的要求。With the continuous development of integrated circuit technology, electronic products are increasingly developing in the direction of miniaturization, intelligence and high reliability, and integrated circuit packaging directly affects the performance of integrated circuits, electronic modules and even the entire machine. In the case of shrinking and increasing integration, the electronics industry has put forward higher and higher requirements for the salvation of integrated circuit packaging.
目前的扇出(fanout)工艺,芯片埋在树脂材料中,当芯片工作四产生的热量因散热不好而累积,从而造成芯片过热,性能降低。In the current fan-out (fanout) process, the chip is buried in the resin material. When the chip is working, the heat generated by the chip is accumulated due to poor heat dissipation, which will cause the chip to overheat and reduce the performance.
发明内容Contents of the invention
本发明提供一种芯片封装工艺,能够解决现有技术存在的散热不佳导致芯片性能降低的问题。The invention provides a chip packaging process, which can solve the problem in the prior art that the performance of the chip is reduced due to poor heat dissipation.
为解决上述技术问题,本发明采用的一个技术方案是:提供一种芯片封装工艺,该工艺包括以下步骤:在载板上形成第一金属图案层;将芯片设置在所述第一金属图案层上,其中,所述芯片包括设有连接凸点的第一侧面和未设置连接凸点的第二侧面,所述第二侧面与所述第一金属图案层接触;在所述载板上设置第一封料层,以包覆所述第一金属图案层和所述芯片,并使所述第一封料层的表面裸露所述连接凸点;在所述第一封料层上形成第二金属图案层,并使所述第二金属图案层的至少部分区域与所述连接凸点接触;在所述第一封料层上设置第二封料层,所述第二封料层的表面裸露所述第二金属图案层;拆除所述载板,以使所述第一封料层的表面裸露所述第一金属图案层。In order to solve the above technical problems, a technical solution adopted by the present invention is to provide a chip packaging process, which includes the following steps: forming a first metal pattern layer on a carrier plate; placing the chip on the first metal pattern layer On, wherein, the chip includes a first side with connection bumps and a second side without connection bumps, the second side is in contact with the first metal pattern layer; set on the carrier A first sealing material layer, to cover the first metal pattern layer and the chip, and expose the connection bumps on the surface of the first sealing material layer; form a second sealing material layer on the first sealing material layer two metal pattern layers, and make at least a partial area of the second metal pattern layer contact with the connection bumps; a second sealing material layer is arranged on the first sealing material layer, and the second sealing material layer The surface of the second metal pattern layer is exposed; the carrier board is removed, so that the surface of the first encapsulant layer exposes the first metal pattern layer.
其中,所述在载板上形成第一金属图案层的步骤之后还包括:在所述载板之上形成限位部件,以限定所述芯片的位置。Wherein, after the step of forming the first metal pattern layer on the carrier, it further includes: forming a limiting component on the carrier to limit the position of the chip.
其中,所述限位部件包括多个限位柱体,所述多个限位柱体嵌在所述第一封料层内部并围成一个装载空间;所述将芯片设置在所述第一金属图案层上的步骤还包括:将所述芯片设置在所述装载空间内。Wherein, the limiting component includes a plurality of limiting cylinders, and the plurality of limiting cylinders are embedded in the first encapsulant layer and enclose a loading space; the chip is placed in the first The step on the metal pattern layer further includes: disposing the chip in the loading space.
其中,所述第一金属图案层包括互不连接的基部和散热部,所述基部设置在所述散热部的外周;所述将芯片设置在所述第一金属图案层上的步骤为:将所述芯片设置在所述散热部上,并使所述第二侧面与所述散热部接触;所述在所述载板之上形成限位部件的步骤为:在所述基部上形成所述限位柱体,并使所述限位柱体的一端与所述基部接触。Wherein, the first metal pattern layer includes a base part and a heat dissipation part which are not connected to each other, and the base part is arranged on the outer periphery of the heat dissipation part; the step of arranging the chip on the first metal pattern layer is: The chip is arranged on the heat dissipation part, and the second side surface is in contact with the heat dissipation part; the step of forming a limiting part on the carrier board is: forming the Limit the column, and make one end of the limit column contact with the base.
其中,所述限位柱体为金属柱体;所述在所述第一封料层上形成第二金属图案层,并使所述第二金属图案层的至少部分区域与所述连接凸点接触的步骤还包括:使所述第二金属图案层的至少部分区域与所述限位柱体的另一端接触。Wherein, the limiting cylinder is a metal cylinder; the second metal pattern layer is formed on the first encapsulant layer, and at least part of the second metal pattern layer is connected to the connection bump The contacting step further includes: contacting at least a partial area of the second metal pattern layer with the other end of the limiting post.
其中,所述基部包括多个互不相连的布线区域,每个所述布线区域上至少设置有一个所述限位柱体。Wherein, the base includes a plurality of interconnected wiring areas, each of which is provided with at least one limiting column.
其中,所述在所述载板上设置第一封料层,以包覆所述第一金属图案层和所述芯片,并使所述第一封料层的表面裸露所述连接凸点的步骤包括:在所述载板上压合第一封料预制片,以使所述第一封料预制片包覆所述第一金属图案层和所述芯片;打磨所述第一封料预制片的表面,以形成所述第一封料层,并使所述连接凸点裸露出来。Wherein, the first encapsulant layer is provided on the carrier to cover the first metal pattern layer and the chip, and the surface of the first encapsulant layer exposes the connection bumps. The steps include: pressing a first encapsulation prefabricated sheet on the carrier, so that the first encapsulation prefabricated sheet covers the first metal pattern layer and the chip; polishing the first encapsulation prefabricated sheet The surface of the material prefabricated sheet is formed to form the first encapsulant layer and expose the connection bumps.
其中,所述在载板上形成第一金属图案层的步骤之后还包括:在所述载板之上形成限位部件,以限定所述芯片的位置;Wherein, after the step of forming the first metal pattern layer on the carrier, it further includes: forming a limiting member on the carrier to limit the position of the chip;
所述在所述载板上设置第一封料层,以包覆所述第一金属图案层和所述芯片,并使所述第一封料层的表面裸露所述连接凸点的步骤包括:在所述载板上压合第一封料预制片,以使所述第一封料预制片包覆所述第一金属图案层、所述芯片以及所述限位部件;打磨所述第一封料预制片的表面,以形成所述第一封料层,并使所述连接凸点和所述限位部件裸露出来。The step of arranging a first encapsulant layer on the carrier to cover the first metal pattern layer and the chip, and exposing the connection bumps on the surface of the first encapsulant layer includes : Pressing the first encapsulation prefabricated sheet on the carrier, so that the first encapsulation prefabricated sheet covers the first metal pattern layer, the chip and the limiting component; The surface of the first encapsulant prefabricated sheet is formed to form the first encapsulant layer, and the connecting bumps and the limiting components are exposed.
其中,所述在所述第一封料层上设置第二封料层,所述第二封料层的表面裸露出所述第二金属图案层的步骤包括:在所述第一封料层上压合第二封料预制片,以使所述第二封料预制片包覆所述第二金属图案层;打磨所述第二封料预制片的表面,以形成所述第二封料层,并使所述第二金属图案层裸露出来。Wherein, the step of arranging a second sealing material layer on the first sealing material layer, and exposing the second metal pattern layer on the surface of the second sealing material layer includes: pressing the second encapsulation prefabricated sheet, so that the second encapsulation prefabricated sheet covers the second metal pattern layer; polishing the surface of the second encapsulation prefabricated sheet to form the first The second sealing material layer is used to expose the second metal pattern layer.
其中,所述第一封料层和所述第二封料层均为树脂层。Wherein, both the first sealing material layer and the second sealing material layer are resin layers.
本发明的有益效果是:区别于现有技术的情况,本发明通过将第一金属图案层和第二金属图案层分别在封料层的两侧裸露出来,并且,芯片的第二侧面与第一金属图案层接触,因而,即使芯片嵌于封料层中,芯片工作时产生的热量能从第一金属图案层及时散发出去,而不会造成热量的累积,避免芯片过热而导致性能降低。The beneficial effects of the present invention are: different from the situation of the prior art, the present invention exposes the first metal pattern layer and the second metal pattern layer on both sides of the encapsulant layer respectively, and the second side of the chip and the first The first metal pattern layer is in contact with each other, so even if the chip is embedded in the encapsulation layer, the heat generated by the chip can be dissipated from the first metal pattern layer in time without causing heat accumulation, which prevents the chip from overheating and resulting in performance degradation.
附图说明Description of drawings
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those skilled in the art, other drawings can also be obtained based on these drawings without creative effort.
图1是本发明实施例提供的芯片封装结构的俯视图;FIG. 1 is a top view of a chip packaging structure provided by an embodiment of the present invention;
图2是图1中A区域的侧视图;Fig. 2 is a side view of area A in Fig. 1;
图3是本发明实施例提供的芯片封装结构中第一金属图案层和限位部件的俯视图;Fig. 3 is a top view of the first metal pattern layer and the limiting component in the chip packaging structure provided by the embodiment of the present invention;
图4是本发明另一实施例提供的芯片封装结构一个区域的侧视图;Fig. 4 is a side view of a region of a chip package structure provided by another embodiment of the present invention;
图5是本发明实施例提供的芯片封装工艺的流程示意图;5 is a schematic flow chart of a chip packaging process provided by an embodiment of the present invention;
图6是本发明另一实施例提供的芯片封装工艺的流程示意图;6 is a schematic flow chart of a chip packaging process provided by another embodiment of the present invention;
图7是图6中步骤S21时的俯视图;Fig. 7 is a top view during step S21 in Fig. 6;
图8是图7中A区域的侧视图;Fig. 8 is a side view of area A in Fig. 7;
图9是图6中步骤S22时的俯视图;Fig. 9 is a top view during step S22 in Fig. 6;
图10是图9中A区域的侧视图;Fig. 10 is a side view of area A in Fig. 9;
图11是图6中步骤S23时的俯视图;Fig. 11 is a top view during step S23 in Fig. 6;
图12是图11中A区域的侧视图;Fig. 12 is a side view of area A in Fig. 11;
图13是图6中步骤S24的第一封料预制片压合前的俯视图;Fig. 13 is a top view of the first sealing prefabricated sheet in step S24 in Fig. 6 before lamination;
图14是图13中A区域的侧视图;Fig. 14 is a side view of area A in Fig. 13;
图15是图6中步骤S24的第一封料预制片压合后的俯视图;Fig. 15 is a top view of the first encapsulation prefabricated sheet after lamination in step S24 in Fig. 6;
图16是图15中A区域的侧视图;Fig. 16 is a side view of area A in Fig. 15;
图17是图6中步骤S24形成第一封料层后的俯视图;Fig. 17 is a top view of the first encapsulant layer formed in step S24 in Fig. 6;
图18是图17中A区域的侧视图;Fig. 18 is a side view of area A in Fig. 17;
图19是图6中步骤S25时的俯视图;Fig. 19 is a top view during step S25 in Fig. 6;
图20是图19中A区域的侧视图;Fig. 20 is a side view of area A in Fig. 19;
图21是图6中步骤S26压合第二封料预制片后的俯视图;Fig. 21 is a top view of the second sealing material prefabricated sheet after step S26 in Fig. 6 is pressed;
图22是图21中A区域的侧视图;Fig. 22 is a side view of area A in Fig. 21;
图23是图6中步骤S26形成第二封料层后的俯视图;Fig. 23 is a top view of the second encapsulant layer formed in step S26 in Fig. 6;
图24是图23中A区域的侧视图。Fig. 24 is a side view of area A in Fig. 23 .
具体实施方式detailed description
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明的一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
图1是本发明实施例提供的芯片封装结构的俯视图。图2是图1中A区域的侧视图。FIG. 1 is a top view of a chip package structure provided by an embodiment of the present invention. Fig. 2 is a side view of area A in Fig. 1 .
如图1和图2所示,本发明的芯片封装工艺所形成的芯片封装结构至少包括第一金属图案层10、芯片20、第二金属图案层30以及封料层40,其中,芯片20设置在第一金属图案层10上,并与第一金属图案层10接触,第二金属图案层30设置在芯片20之上,封料层40包覆第一金属图案层10、芯片20和第二金属图案层30。As shown in Figures 1 and 2, the chip packaging structure formed by the chip packaging process of the present invention at least includes a first metal pattern layer 10, a chip 20, a second metal pattern layer 30, and a sealing material layer 40, wherein the chip 20 is set On the first metal pattern layer 10 and in contact with the first metal pattern layer 10, the second metal pattern layer 30 is arranged on the chip 20, and the sealing material layer 40 covers the first metal pattern layer 10, the chip 20 and the second metal pattern layer. Metal pattern layer 30 .
具体地,芯片20包括设有连接凸点21的第一侧面22和未设置连接凸点21的第二侧面23,芯片20设置在第一金属图案层10上,且芯片20的第二侧面23与第一金属图案层10接触,以使芯片20产生的热量可以从第一金属图案层10导出。Specifically, the chip 20 includes a first side 22 provided with connection bumps 21 and a second side 23 not provided with connection bumps 21, the chip 20 is arranged on the first metal pattern layer 10, and the second side 23 of the chip 20 It is in contact with the first metal pattern layer 10 so that the heat generated by the chip 20 can be dissipated from the first metal pattern layer 10 .
第二金属图案层30设置在芯片20之上,第二金属图案层30的至少部分区域与连接凸点21接触,以通过第二金属图案层30将芯片20与外部电路导通。The second metal pattern layer 30 is disposed on the chip 20 , at least a part of the second metal pattern layer 30 is in contact with the connection bump 21 , so as to conduct the chip 20 with the external circuit through the second metal pattern layer 30 .
封料层40包覆第一金属图案层10、芯片20和第二金属图案层30,且封料层40的一侧裸露出第一金属图案层10,封料层40的另一侧裸露出第二金属图案层30。该封料层40一方面能起绝缘作用,另一方面使芯片20更加牢固地固定在第一金属图案层40上,能有效避免芯片20脱落的情况发生。The sealing material layer 40 covers the first metal pattern layer 10, the chip 20 and the second metal pattern layer 30, and one side of the sealing material layer 40 exposes the first metal pattern layer 10, and the other side of the sealing material layer 40 exposes The second metal pattern layer 30 . On the one hand, the encapsulant layer 40 can play an insulating role, and on the other hand, the chip 20 can be more firmly fixed on the first metal pattern layer 40 , which can effectively prevent the chip 20 from falling off.
区别于现有技术,本发明通过将第一金属图案层10和第二金属图案层30分别在封料层40的两侧裸露出来,并且,芯片20的第二侧面23与第一金属图案层10接触,因而,即使芯片20嵌于封料层40中,芯片20工作时产生的热量能从第一金属图案层10及时散发出去,而不会造成热量的累积,避免芯片20过热而导致性能降低。Different from the prior art, the present invention exposes the first metal pattern layer 10 and the second metal pattern layer 30 on both sides of the sealing material layer 40, and the second side 23 of the chip 20 is connected to the first metal pattern layer 10 contacts, therefore, even if the chip 20 is embedded in the encapsulant layer 40, the heat generated by the chip 20 during operation can be dissipated from the first metal pattern layer 10 in time, without causing accumulation of heat, and avoiding the overheating of the chip 20 and causing performance problems. reduce.
在芯片20外周设有限位部件,以限定芯片20的位置,从而防止塑封时候封料在固化过程中的涨缩导致芯片20偏移。A limiting component is provided on the periphery of the chip 20 to limit the position of the chip 20 , so as to prevent the chip 20 from shifting due to expansion and contraction of the encapsulant during curing.
具体而言,在本实施例中,限位部件包括多个限位柱体50,多个限位柱体50嵌在封料层40内部并围成一个装载空间60,芯片20设置在装载空间60内。例如,本实施例的芯片20为方形,限位柱体50形成栅栏并围成一个方形,芯片20装载在该方形的装载空间60内。当然,在其它一些实施例中,芯片20可以是其它形状,限位柱体50形成的栅栏则围成与芯片20近似的形状。Specifically, in this embodiment, the limiting component includes a plurality of limiting cylinders 50, the plurality of limiting cylinders 50 are embedded inside the encapsulant layer 40 and enclose a loading space 60, and the chip 20 is arranged in the loading space Within 60. For example, the chip 20 in this embodiment is square, and the limiting columns 50 form a fence and enclose a square, and the chip 20 is loaded in the square loading space 60 . Certainly, in some other embodiments, the chip 20 may have other shapes, and the fence formed by the limiting cylinder 50 is surrounded by a shape similar to the chip 20 .
可以理解地,在其它一些实施例中,限位部件还可以是其它结构,例如,限位部件为设置在芯片四个角处的L形件,或者设置在芯片20四条边上的挡板等,只要能限定芯片20的位置,防止芯片20偏移即可。It can be understood that in some other embodiments, the limiting component can also be of other structures, for example, the limiting component is an L-shaped piece arranged at the four corners of the chip, or a baffle arranged on the four sides of the chip 20, etc. , as long as the position of the chip 20 can be limited to prevent the chip 20 from shifting.
限位柱体50形成在第一金属图案层10上,限位柱体50的一端与第一金属图案层10接触,从而以第一金属图案层10作为限位柱体50的基础,形成框架结构,能增加结合力,提高限位柱体50的稳固性。The limiting cylinder 50 is formed on the first metal pattern layer 10, and one end of the limiting cylinder 50 is in contact with the first metal pattern layer 10, so that the first metal pattern layer 10 is used as the basis of the limiting cylinder 50 to form a frame The structure can increase the binding force and improve the stability of the limiting cylinder 50.
请参阅图3,图3是本发明实施例提供的芯片封装结构中第一金属图案层和限位部件的俯视图。第一金属图案层10包括互不相连的基部11和散热部12,基部11设置在散热部12的外周。具体地,限位柱体50形成在基部11上,芯片20则设置在散热部12上,且第二侧面23与散热部12接触。其中,散热部12呈网状,例如,本实施例的散热部12为一个方形的网,该方形的网的形状和大小与芯片的第二侧面23的形状和大小相近,芯片20的第二侧面23直接与该散热部12接触,由于散热部12为金属材料,因而散热部12能将芯片20的热量充分导出。Please refer to FIG. 3 . FIG. 3 is a top view of the first metal pattern layer and the limiting component in the chip package structure provided by the embodiment of the present invention. The first metal pattern layer 10 includes a base portion 11 and a heat dissipation portion 12 which are not connected to each other, and the base portion 11 is disposed on the outer periphery of the heat dissipation portion 12 . Specifically, the limiting post 50 is formed on the base 11 , the chip 20 is disposed on the heat dissipation portion 12 , and the second side 23 is in contact with the heat dissipation portion 12 . Wherein, the heat dissipation part 12 is in the shape of a net. For example, the heat dissipation part 12 of the present embodiment is a square net whose shape and size are similar to those of the second side 23 of the chip. The second side of the chip 20 The side surface 23 is directly in contact with the heat dissipation part 12 , and since the heat dissipation part 12 is made of metal material, the heat dissipation part 12 can fully dissipate the heat of the chip 20 .
限位柱体50为金属柱体,第二金属图案层30的至少部分区域与限位柱体50的另一端接触。因此,限位柱体50的两端分别连接第一金属图案层10和第二金属图案层30,第二金属图案层30与芯片20的连接凸点21连接,从而可以建立连接凸点21与限位柱体20以及第一金属层10之间的连接。使得第一金属层10也能作为基线,从而使芯片20的第一侧面22和第二侧面23均能与外部电路连接。The limiting cylinder 50 is a metal cylinder, and at least a partial area of the second metal pattern layer 30 is in contact with the other end of the limiting cylinder 50 . Therefore, the two ends of the limiting cylinder 50 are respectively connected to the first metal pattern layer 10 and the second metal pattern layer 30, and the second metal pattern layer 30 is connected to the connection bump 21 of the chip 20, so that the connection bump 21 and the connection bump 21 can be established. Limit the connection between the post 20 and the first metal layer 10 . The first metal layer 10 can also be used as a baseline, so that both the first side 22 and the second side 23 of the chip 20 can be connected to external circuits.
举例而言,本实施例中的第二金属图案层30包括多个圆形的连接盘31以及连接桥32,第二金属图案层30的一部分区域,如本实施例的中间的区域中,每个连接盘31分别对应一个连接凸点21,并与该连接凸点21连接,其余区域的连接盘31则位于中间区域的外周,外周的连接盘31中,有部分连接盘31通过连接桥32与中间区域的部分连接盘31连接。此外,连接桥32还可以设置在中间区域,而在不同的连个连接凸点21之间建立连接。连接盘31和连接桥32的形状和数量根据实际需要来设置。可以理解地,在另一些实施例中,第二金属图案层30还可以具有其他图案。For example, the second metal pattern layer 30 in this embodiment includes a plurality of circular lands 31 and connection bridges 32, a part of the second metal pattern layer 30, such as the middle area of this embodiment, each Each connection pad 31 corresponds to a connection bump 21 respectively, and is connected with the connection bump 21, and the connection pads 31 in the remaining areas are located at the outer periphery of the middle area, and among the connection pads 31 of the outer periphery, some connection pads 31 pass through the connection bridge 32 It is connected with some connection pads 31 in the middle area. In addition, the connecting bridge 32 can also be arranged in the middle area to establish a connection between two different connecting bumps 21 . The shapes and numbers of the connection pads 31 and the connection bridges 32 are set according to actual needs. Understandably, in other embodiments, the second metal pattern layer 30 may also have other patterns.
第一金属图案层10中的基部和11散热部12之间互不相连,从而使得基部11作为基线而与外部电路连通,起导通作用,而散热部12起散热作用。The base in the first metal pattern layer 10 is not connected to the heat sink 11 , so that the base 11 acts as a base line and communicates with an external circuit for conduction, while the heat sink 12 acts as a heat sink.
基部11包括多个互不相连的布线区域,例如图3中的布线区域13a,13b、13c、13d、13e和13f,每个布线区域上至少设置有一个限位柱体50,以建立该布线区域与芯片20之间的连接。例如图3中布线区域13a上设有5个限位柱体50,布线区域13b、13c、13d上分别设有1个限位柱体50,13e上设有4个限位柱体50,具体布线区域的数量以及每个布线区域上设置的限位柱体50的数量根据实际需求而设置。The base 11 includes a plurality of interconnected wiring areas, such as the wiring areas 13a, 13b, 13c, 13d, 13e and 13f in FIG. connection between the area and the chip 20 . For example, in Fig. 3, five space-limiting cylinders 50 are arranged on the wiring area 13a, one space-limiting cylinder 50 is respectively provided on the wiring areas 13b, 13c, and 13d, and four space-limiting cylinders 50 are provided on the wiring area 13e. The number of wiring areas and the number of limiting cylinders 50 provided on each wiring area are set according to actual requirements.
封料层40包括第一封料层41和第二封料层42,第一金属图案层10、芯片20和限位部件嵌在第一封料层41内,第二金属图案层30嵌在第二封料层42内。The sealing material layer 40 includes a first sealing material layer 41 and a second sealing material layer 42, the first metal pattern layer 10, the chip 20 and the limiting component are embedded in the first sealing material layer 41, and the second metal pattern layer 30 is embedded in the Inside the second sealing material layer 42 .
具体地,本实施例的第一封料层41包覆第一金属图案层10、芯片20和限位柱体50,使得芯片20、第一金属图案层10和限位柱体50的位置固定。Specifically, the first encapsulant layer 41 of this embodiment covers the first metal pattern layer 10, the chip 20 and the limiting cylinder 50, so that the positions of the chip 20, the first metal pattern layer 10 and the limiting cylinder 50 are fixed. .
第二封料层42包覆第二金属图案层30,使得第二金属图案层30能更牢固地固定在第一封料层41上。The second sealing material layer 42 covers the second metal pattern layer 30 so that the second metal pattern layer 30 can be more firmly fixed on the first sealing material layer 41 .
具体地,封料层40为树脂层,例如环氧树脂,环氧树脂的密封性能较好,塑封容易。Specifically, the sealing material layer 40 is a resin layer, such as epoxy resin. The epoxy resin has better sealing performance and is easy to be molded.
综上,本发明的芯片封装结构中,芯片20产生的热量能及时从第一金属图案层10散发出去,避免热量的累积,维护了芯片20的性能。To sum up, in the chip packaging structure of the present invention, the heat generated by the chip 20 can be dissipated from the first metal pattern layer 10 in time to avoid heat accumulation and maintain the performance of the chip 20 .
如图4所示,图4是本发明另一实施例提供的芯片封装结构一个区域的侧视图。本实施例与上述实施例的区别在于,本实施例的芯片封装结构为两个上述实施例的芯片封装结构的堆叠,并且,底层的芯片封装结构的第二金属图案层30与限位柱体50对应的位置处,以及顶层的芯片封装结构的第一金属图案层10余限位柱体50对应的位置处通过焊球70进行连接,以实现两个芯片之间的导通。As shown in FIG. 4 , FIG. 4 is a side view of a region of a chip package structure provided by another embodiment of the present invention. The difference between this embodiment and the above-mentioned embodiments is that the chip packaging structure of this embodiment is a stack of the chip packaging structures of the two above-mentioned embodiments, and the second metal pattern layer 30 of the underlying chip packaging structure and the limiting posts 50, and the positions corresponding to the first metal pattern layer 10 of the top chip packaging structure and the position corresponding to the limiting pillars 50 are connected through solder balls 70 to realize the conduction between the two chips.
可以理解地,在其它一些实施例中,还可以是多个上述实施例的芯片封装结构的堆叠。Understandably, in some other embodiments, multiple chip packaging structures of the above embodiments may also be stacked.
请继续参阅图5,图5是本发明实施例提供的芯片封装工艺的流程示意图。Please continue to refer to FIG. 5 , which is a schematic flowchart of a chip packaging process provided by an embodiment of the present invention.
本实施例的芯片封装工艺包括以下步骤:The chip packaging process of this embodiment includes the following steps:
S11:在载板上形成第一金属图案层。S11: forming a first metal pattern layer on the carrier.
第一金属图案层10的形成过程可以是:先在载板上形成一金属层,再通过黄光制程,经过曝光、显影、蚀刻等步骤形成预设的图案,从而形成第一金属图案层10。The formation process of the first metal pattern layer 10 may be: firstly forming a metal layer on the carrier plate, and then forming a preset pattern through the yellow light process, exposure, development, etching and other steps, thereby forming the first metal pattern layer 10 .
S12:将芯片设置在第一金属图案层上,其中,芯片包括设有连接凸点的第一侧面和未设置连接凸点的第二侧面,第二侧面与第一金属图案层接触。S12: disposing the chip on the first metal pattern layer, wherein the chip includes a first side with connection bumps and a second side without connection bumps, and the second side is in contact with the first metal pattern layer.
具体地,载板的一面通过激光形成对准标记,芯片20则按照对准标记进行设置。本实施例的芯片20的整个第二侧面23均与第一金属图案层10接触,从而能充分散热。Specifically, alignment marks are formed on one side of the carrier board by laser, and the chips 20 are arranged according to the alignment marks. In this embodiment, the entire second side surface 23 of the chip 20 is in contact with the first metal pattern layer 10 , so that heat can be sufficiently dissipated.
S13:在载板上设置第一封料层,以包覆第一金属图案层和芯片,并使第一封料层的表面裸露连接凸点。S13: disposing a first encapsulant layer on the carrier to cover the first metal pattern layer and the chip, and expose the connection bumps on the surface of the first encapsulant layer.
具体地,本实施例中,第一封料层41的设置包括以下步骤:先在载板上压合第一封料预制片,以使第一封料预制片包覆第一金属图案层10和芯片20,再打磨第一封料预制片的表面,以形成第一封料层41,并使连接凸点21裸露出来。Specifically, in this embodiment, the setting of the first encapsulation layer 41 includes the following steps: first, press the first encapsulation prefabricated sheet on the carrier, so that the first encapsulation prefabricated sheet covers the first metal pattern layer 10 and chip 20, and then polish the surface of the first encapsulation prefabricated sheet to form the first encapsulation layer 41 and expose the connection bumps 21.
可以理解地,在其他一些实施例中,还可以通过形成通孔来裸露出连接凸点21。Understandably, in some other embodiments, the connection bumps 21 may also be exposed by forming through holes.
S14:在第一封料层上形成第二金属图案层,并使第二金属图案层的至少部分区域与连接凸点接触。S14: forming a second metal pattern layer on the first encapsulant layer, and making at least a partial area of the second metal pattern layer contact with the connection bumps.
第二金属图案层30的形成过程可以是:先在载板上形成一金属层,再通过黄光制程,经过曝光、显影、蚀刻等步骤形成预设的图案,从而形成第二金属图案层30。并且,第二金属图案层30的部分区域与连接凸点21接触,从而建立的连接凸点21和第二金属图案层30之间的连接,从而使外部电路通过第二金属图案层30而与芯片20导通。The formation process of the second metal pattern layer 30 can be: firstly forming a metal layer on the carrier plate, and then through the yellow light process, after exposure, development, etching and other steps to form a preset pattern, so as to form the second metal pattern layer 30 . And, the partial area of the second metal pattern layer 30 is in contact with the connection bump 21, thereby establishing the connection between the connection bump 21 and the second metal pattern layer 30, so that the external circuit is connected with the second metal pattern layer 30. Chip 20 is turned on.
S15:在第一封料层上设置第二封料层,第二封料层的表面裸露第二金属图案层。S15: disposing a second sealing material layer on the first sealing material layer, the surface of the second sealing material layer exposing the second metal pattern layer.
步骤S15中,第二封料层42的设置包括以下步骤:先在第一封料层41上压合第二封料预制片,以使第二封料预制片包覆第二金属图案层30,再打磨第二封料预制片的表面,以形成第二封料层42,并使第二金属图案层30裸露出来。In step S15, the setting of the second sealing material layer 42 includes the following steps: firstly pressing the second sealing material prefabricated sheet on the first sealing material layer 41, so that the second sealing material prefabricated sheet covers the second metal pattern layer 30, and then polish the surface of the second encapsulation prefabricated sheet to form the second encapsulation layer 42 and expose the second metal pattern layer 30.
S16:拆除载板,以使第一封料层的表面裸露第一金属图案层。S16: Remove the carrier board, so that the surface of the first encapsulant layer exposes the first metal pattern layer.
步骤S16后,第一金属图案层10裸露在第一封料层41的表面,而芯片20的第二侧面23与该第一金属图案层41接触,从而使得芯片20产生的热量能通过第一金属图案层10散发出去,而不会造成热量的累积,避免芯片20过热而导致性能降低。After step S16, the first metal pattern layer 10 is exposed on the surface of the first encapsulant layer 41, and the second side 23 of the chip 20 is in contact with the first metal pattern layer 41, so that the heat generated by the chip 20 can pass through the first metal pattern layer 41. The metal pattern layer 10 is dissipated without causing heat accumulation, so as to prevent the chip 20 from being overheated and causing performance degradation.
请参阅图6,图6是本发明另一实施例提供的芯片封装工艺的流程示意图。Please refer to FIG. 6 . FIG. 6 is a schematic flowchart of a chip packaging process provided by another embodiment of the present invention.
S21:在载板上形成第一金属图案层。S21: forming a first metal pattern layer on the carrier.
如图7和图8所示,图7是图6中步骤S21时的俯视图。图8是图7中A区域的侧视图。本实施例的第一金属图案层10形成在载板90上,该第一金属图案层10包括基部11和散热部12,其中,基部11设置在散热部12的外周,基部11包括多个互不相连的布线区域11a、11b、11c、11d、11e和11f。散热部12呈网状。As shown in FIG. 7 and FIG. 8 , FIG. 7 is a top view of step S21 in FIG. 6 . Fig. 8 is a side view of area A in Fig. 7 . The first metal pattern layer 10 of this embodiment is formed on the carrier 90, the first metal pattern layer 10 includes a base 11 and a heat dissipation portion 12, wherein the base 11 is arranged on the outer periphery of the heat dissipation portion 12, and the base 11 includes a plurality of interconnected Disconnected wiring regions 11a, 11b, 11c, 11d, 11e, and 11f. The heat dissipation portion 12 is in the shape of a mesh.
基部11和散热部12之间互不相连,从而使得基部11作为基线而与外部电路连通,起导通作用,而散热部12起散热作用。The base portion 11 and the heat dissipation portion 12 are not connected to each other, so that the base portion 11 is used as a baseline to communicate with an external circuit, and plays a role of conduction, while the heat dissipation portion 12 plays a role of heat dissipation.
S22:在载板之上形成限位部件,以限定芯片的位置。S22: Form a limiting component on the carrier to limit the position of the chip.
请参阅图9和图10,图9是图6中步骤S22时的俯视图。图10是图9中A区域的侧视图。具体地,限位部件包括多个限位柱体50,该限位柱体50为金属柱体,多个限位柱体50围成一个装载空间60,例如限位柱体5围绕在散热部12的外周而在散热部12的上方形成装载空间60。本实施例的多个限位柱体50均形成在基部11上,使基部11作为限位柱体50的基础,形成框架结构,能增加结合力,提高限位柱体50的稳固性。基部11的每个布线区域上至少设置有一个限位柱体50。Please refer to FIG. 9 and FIG. 10 , FIG. 9 is a top view of step S22 in FIG. 6 . Fig. 10 is a side view of area A in Fig. 9 . Specifically, the limiting component includes a plurality of limiting cylinders 50, the limiting cylinders 50 are metal cylinders, and the multiple limiting cylinders 50 enclose a loading space 60, for example, the limiting cylinders 5 surround the heat dissipation part 12 to form a loading space 60 above the heat sink 12 . The plurality of limiting cylinders 50 in this embodiment are all formed on the base 11 , and the base 11 is used as the foundation of the limiting cylinders 50 to form a frame structure, which can increase the binding force and improve the stability of the limiting cylinders 50 . At least one limiting column 50 is disposed on each wiring area of the base 11 .
可以理解地,在其它一些实施例中,限位部件还可以是其它结构,例如,限位部件为设置在芯片20四个角处的L形件,或者设置在芯片20四条边上的挡板等,只要能限定芯片20的位置,防止芯片20偏移即可。It can be understood that in some other embodiments, the limiting component can also be of other structures, for example, the limiting component is an L-shaped piece arranged at the four corners of the chip 20, or a baffle arranged on the four sides of the chip 20 etc., as long as the position of the chip 20 can be limited to prevent the chip 20 from shifting.
S23:将芯片设置在第一金属图案层上,其中,芯片包括设有连接凸点的第一侧面和未设置连接凸点的第二侧面,第二侧面与第一金属图案层接触。S23: disposing the chip on the first metal pattern layer, wherein the chip includes a first side with connection bumps and a second side without connection bumps, and the second side is in contact with the first metal pattern layer.
如图11和图12所示,图11是图6中步骤S23的俯视图,图12是图11中A区域的侧视图。As shown in FIG. 11 and FIG. 12 , FIG. 11 is a top view of step S23 in FIG. 6 , and FIG. 12 is a side view of area A in FIG. 11 .
芯片20包括设有连接凸点21的第一侧面22和未设置连接凸点21的第二侧面23。将芯片20设置在限位柱体50形成的装载空间60内,从而通过限位柱体50防止塑封时候封料在固化过程中的涨缩导致芯片20偏移。同时,将芯片20设置在散热部12上,使第二侧面23与散热部12接触。The chip 20 includes a first side 22 with connection bumps 21 and a second side 23 without connection bumps 21 . The chip 20 is placed in the loading space 60 formed by the limiting cylinder 50 , so that the limiting cylinder 50 prevents the chip 20 from shifting due to expansion and contraction of the encapsulant during the curing process during plastic packaging. At the same time, the chip 20 is disposed on the heat dissipation part 12 so that the second side surface 23 is in contact with the heat dissipation part 12 .
S24:在载板上设置第一封料层,以包覆第一金属图案层、芯片和限位部件,并使第一封料层的表面裸露连接凸点和限位部件。S24: disposing a first encapsulant layer on the carrier to cover the first metal pattern layer, the chip and the limiting component, and expose the surface of the first encapsulating material layer to connect the bumps and the limiting component.
步骤S24具体包括:Step S24 specifically includes:
先在载板90上压合第一封料预制片43,以使第一封料预制片43包覆第一金属图案层10、芯片20以及限位柱体50。如图13、图14、图15和图16所示,图13是图6中步骤S24的第一封料预制片压合前的俯视图。图14是图13中A区域的侧视图。图15是图6中步骤S24的第一封料预制片压合后的俯视图。图16是图15中A区域的侧视图。Firstly, the first encapsulation prefabricated sheet 43 is pressed on the carrier 90 so that the first encapsulation prefabricated sheet 43 covers the first metal pattern layer 10 , the chip 20 and the limiting cylinder 50 . As shown in FIG. 13 , FIG. 14 , FIG. 15 and FIG. 16 , FIG. 13 is a top view of the first sealing prefabricated sheet in step S24 in FIG. 6 before lamination. Fig. 14 is a side view of area A in Fig. 13 . FIG. 15 is a top view of the first encapsulation prefabricated sheet after lamination in step S24 in FIG. 6 . Fig. 16 is a side view of area A in Fig. 15 .
然后,打磨第一封料预制片43的表面,以形成第一封料层41,并使连接凸点21和限位柱体50裸露出来。如图17和图18所示,图17是图6中步骤S24形成第一封料层后的俯视图,图18是图17中A区域的侧视图。Then, the surface of the first sealing material prefabricated sheet 43 is polished to form the first sealing material layer 41 , and expose the connection bumps 21 and the limiting posts 50 . As shown in FIG. 17 and FIG. 18 , FIG. 17 is a top view of the first encapsulant layer formed in step S24 in FIG. 6 , and FIG. 18 is a side view of area A in FIG. 17 .
S25:在第一封料层上形成第二金属图案层,并使第二金属图案层的至少部分区域与连接凸点接触,至少部分区域与限位柱体的另一端接触。S25: Form a second metal pattern layer on the first encapsulant layer, and make at least a partial area of the second metal pattern layer be in contact with the connection bump, and at least a partial area be in contact with the other end of the limiting post.
如图19和图20所示,图19是图6中步骤S25的俯视图。图20是图19中A区域的侧视图。步骤S25中,在第一封料层41上形成第二金属图案层30,举例而言,本实施例中的第二金属图案层30包括多个圆形的连接盘31以及连接桥32,第二金属图案层30的一部分区域,如本实施例的中间的区域中,每个连接盘31分别对应一个连接凸点21,并与该连接凸点21连接,其余区域的连接盘31则位于中间区域的外周,外周的连接盘31中,有部分连接盘31通过连接桥32与中间区域的部分连接盘31连接。此外,连接桥32还可以设置在中间区域,而在不同的连个连接凸点21之间建立连接。连接盘31和连接桥32的形状和数量根据实际需要来设置。可以理解地,在另一些实施例中,第二金属图案层30还可以具有其他图案。As shown in FIG. 19 and FIG. 20 , FIG. 19 is a top view of step S25 in FIG. 6 . Fig. 20 is a side view of area A in Fig. 19 . In step S25, the second metal pattern layer 30 is formed on the first encapsulant layer 41. For example, the second metal pattern layer 30 in this embodiment includes a plurality of circular lands 31 and connection bridges 32. Part of the area of the second metal pattern layer 30, such as the middle area of this embodiment, each land 31 corresponds to a connection bump 21, and is connected to the connection bump 21, and the lands 31 of the remaining areas are located in the middle In the outer periphery of the region, some of the connecting pads 31 in the outer peripheral region are connected to some of the connecting pads 31 in the middle region through connecting bridges 32 . In addition, the connecting bridge 32 can also be arranged in the middle area to establish a connection between two different connecting bumps 21 . The shapes and numbers of the connection pads 31 and the connection bridges 32 are set according to actual needs. Understandably, in other embodiments, the second metal pattern layer 30 may also have other patterns.
S26:在第一封料层上设置第二封料层,第二封料层的表面裸露第二金属图案层。S26: disposing a second sealing material layer on the first sealing material layer, the surface of the second sealing material layer exposing the second metal pattern layer.
步骤S26具体包括以下步骤:Step S26 specifically includes the following steps:
如图21和图22所示,图21是图6中步骤S26压合第二封料预制片后的俯视图,图22是图21中A区域的侧视图。在第一封料层41上压合第二封料预制片44,以使第二封料预制片44包覆第二金属图案层30。As shown in FIGS. 21 and 22 , FIG. 21 is a top view of the second encapsulation prefabricated sheet after step S26 in FIG. 6 , and FIG. 22 is a side view of area A in FIG. 21 . The second sealing prefabricated sheet 44 is pressed on the first sealing material layer 41 so that the second sealing material prefabricated sheet 44 covers the second metal pattern layer 30 .
如图23和图24所示,图23是图6中步骤S26形成第二封料层后的俯视图,图24是图23中A区域的侧视图。打磨第二封料预制片44的表面,以形成第二封料层42,并使第二金属图案层30裸露出来。As shown in FIG. 23 and FIG. 24 , FIG. 23 is a top view of the second encapsulant layer formed in step S26 in FIG. 6 , and FIG. 24 is a side view of area A in FIG. 23 . The surface of the second encapsulation prefabricated sheet 44 is polished to form the second encapsulation layer 42 and expose the second metal pattern layer 30 .
S27:拆除载板,以使第一封料层的表面裸露第一金属图案层。S27: Remove the carrier board, so that the surface of the first encapsulant layer exposes the first metal pattern layer.
步骤S27中,将载板拆除之后,得到如图1和图2所示的芯片封装结构,该封装结构中,第一金属图案层10裸露在第一封料层41的表面,以将芯片20的热量散发出去。In step S27, after the carrier board is removed, a chip packaging structure as shown in FIG. 1 and FIG. The heat is dissipated.
此外,由于第一金属图案层10和第二金属图案层30分别裸露在封料层40的两侧表面,并且由于限位柱体50为金属柱体,限位柱体50的两端分别连接第一金属图案层10和第二金属图案层30,第二金属图案层30与芯片20的连接凸点21连接,从而可以建立连接凸点21与限位柱体50以及第一金属图案层10之间的连接。使得第一金属图案层10也能作为基线,从而使芯片20的第一侧面22和第二侧面23均能与外部电路连接。In addition, since the first metal pattern layer 10 and the second metal pattern layer 30 are respectively exposed on both sides of the encapsulant layer 40, and since the limiting cylinder 50 is a metal cylinder, the two ends of the limiting cylinder 50 are respectively connected The first metal pattern layer 10 and the second metal pattern layer 30, the second metal pattern layer 30 is connected to the connection bump 21 of the chip 20, so that the connection bump 21 and the limiting column 50 and the first metal pattern layer 10 can be established. the connection between. The first metal pattern layer 10 can also be used as a baseline, so that both the first side 22 and the second side 23 of the chip 20 can be connected to external circuits.
在本发明的另一些实施例中,在上述实施例中,步骤S21-S27之后,还包括:将经过上述步骤S21-S27形成的两个芯片封装结构堆叠起来,并通过焊球进行焊接,最终形成如图4所示的芯片封装结构。具体地,底层的芯片封装结构的第二金属图案层30与限位柱体50对应的位置处,以及顶层的芯片封装结构的第一金属图案层10余限位柱体50对应的位置处通过焊球70进行连接,以实现两个芯片之间的导通。In other embodiments of the present invention, in the above embodiment, after steps S21-S27, it also includes: stacking the two chip package structures formed through the above steps S21-S27, and soldering them through solder balls, and finally A chip package structure as shown in FIG. 4 is formed. Specifically, at the position corresponding to the second metal pattern layer 30 of the bottom chip packaging structure and the limiting column 50, and at the position corresponding to the first metal pattern layer 10 and the limiting column 50 of the chip packaging structure of the top layer. The solder balls 70 are connected to realize conduction between the two chips.
可以理解地,在其它一些实施例中,还可以是多个上述实施例的芯片封装结构的堆叠。Understandably, in some other embodiments, multiple chip packaging structures of the above embodiments may also be stacked.
综上所示,本发明能及时将芯片产生的热量散发出去,防止热量累积,维护了芯片的性能。To sum up, the present invention can dissipate the heat generated by the chip in time, prevent heat accumulation, and maintain the performance of the chip.
以上所述仅为本发明的实施方式,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。The above is only the embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process conversion made by using the description of the present invention and the contents of the accompanying drawings, or directly or indirectly used in other related technologies fields, all of which are equally included in the scope of patent protection of the present invention.
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