CN106441644A - Silicon piezoresistive pressure sensor temperature drift compensation method - Google Patents
Silicon piezoresistive pressure sensor temperature drift compensation method Download PDFInfo
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- CN106441644A CN106441644A CN201610353836.9A CN201610353836A CN106441644A CN 106441644 A CN106441644 A CN 106441644A CN 201610353836 A CN201610353836 A CN 201610353836A CN 106441644 A CN106441644 A CN 106441644A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000035945 sensitivity Effects 0.000 claims abstract description 18
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000003750 conditioning effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
- G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention relates to a silicon piezoresistive pressure sensor temperature drift compensation method. The pressure output value UT' after temperature compensation under a certain temperature T DEG C is a<0>+(U<r>-a<r>/b<r>)xb(0) through linear compensation of the zero position and the sensitivity of a pressure sensor line. The beneficial effects are that the error of a silicon piezoresistive pressure sensor caused by the change of temperature can be effectively avoided, and nonlinear correction, zero position temperature compensation and sensitivity temperature compensation can be performed on the pressure sensor.
Description
Technical Field
The invention relates to the related technical field of circuit design applied to signal conditioning of a silicon piezoresistive pressure sensor, in particular to a compensation method for temperature drift of the pressure sensor.
Background
The silicon piezoresistive pressure sensor measures the pressure value of an object by using the wheatstone bridge principle, and generally, four equal resistors are diffused on a circular silicon film and are connected into a wheatstone bridge, as shown in fig. 1.
Due to the characteristics of silicon materials, the pressure response characteristics of silicon piezoresistive pressure sensors at different temperatures are not uniform. In order to avoid the influence of temperature on the pressure sensor, the linear characteristics of the pressure sensor at different temperature points are improved, and the pressure sensor needs to be correspondingly temperature-compensated.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a compensation method for temperature drift of a silicon piezoresistive pressure sensor, which is realized by the following specific technical scheme:
the compensation method for the temperature drift of the silicon piezoresistive pressure sensor comprises the following steps:
1) in the temperature interval [ T1,T2]Inner, T1、T2Are all temperature values, and T1<T2Selecting a plurality of temperature points T, keeping the temperature T unchanged, collecting pressure output values under different pressures P, calculating a first-order linear formula of the pressure output values by a linear fitting method, and calculating second-order fitting formulas a (T) and b (T) of the temperature points by performing second-order linear fitting on the zero point a and the sensitivity b of the temperature points according to the first-order linear formula to obtain the zero points a (T) corresponding to the different temperature points TTAnd sensitivity bT;
2) In the temperature interval [ T1,T2]Setting a known selected fitting temperature point T, and judging the fitting temperature interval [ T ] in which the temperature point T is positioned3,T4],T1、T2、T3、T4Are all temperature values, and T1<T3≤T≤T4<T2By the linear difference formulaCalculating the pressure output value U of the temperature point TTWherein U is3、U4Respectively is a temperature point T3、T4A lower pressure output value;
3) calculating a compensated pressure output value U 'according to the formula (2)'TIn the formula (2), a0Zero position of the sensor at ambient temperature, b0Is the sensitivity of the sensor at normal temperature
The method for compensating the temperature drift of the silicon piezoresistive pressure sensor is further designed in the following way, the first-order linear formula in the step 1) is shown as the formula (1), and a in the formula (1)T、bTRespectively the zero position and the sensitivity of the sensor at a certain temperature T ℃, and P is the measured pressure value of the sensor; u shapeTFor sensor pressure output value
UT=aT+bT×P(1)。
The method for compensating the temperature drift of the silicon piezoresistive pressure sensor is further designed in the step 1)
a(T)=a0+α(T-T0)*Y(FS)
b(T)=b0+β(T-T0)*Y(FS) (3)
Wherein alpha is a zero temperature coefficient; beta is the sensitivity temperature coefficient, and Y (FS) is the full scale output value.
The invention has the following advantages:
the compensation method for the temperature drift of the silicon piezoresistive pressure sensor can be applied to the signal conditioning circuit design of the silicon piezoresistive pressure sensor, and the output stability of the silicon piezoresistive pressure sensor is improved.
Drawings
FIG. 1 is a schematic block diagram of a method of compensating for temperature drift in a silicon piezoresistive pressure sensor in accordance with the present invention.
FIG. 2 is a schematic diagram of a Wheatstone bridge of a silicon piezoresistive pressure sensor.
Detailed Description
The following describes the present invention in detail with reference to the accompanying drawings.
The method for compensating the temperature drift of the silicon piezoresistive pressure sensor comprises the following steps:
1) in the temperature interval [ T1,T2]Inner, T1、T2Are all temperature values, and T1<T2Selecting a plurality of temperature points T, keeping the temperature T unchanged, collecting pressure output values under different pressures P, calculating a first-order linear formula of the pressure output values by a linear fitting method, performing second-order linear fitting on the zero point a and the sensitivity b of each temperature point according to the first-order linear formula, calculating second-order fitting formulas a (T) and b (T) of each temperature point, and obtaining the zero points a (T) corresponding to different temperature points T according to the second-order fitting formulas a (T) and b (T)TAnd sensitivity bT;
2) In the temperature interval [ T1,T2]Setting a known selected fitting temperature point T, and judging the fitting temperature interval [ T ] in which the temperature point T is positioned3,T4],T1、T2、T3、T4Are all temperature values, and T1<T3≤T≤T4<T2By the linear difference formulaCalculating the pressure output value U of the temperature point TTWherein U is3、U4Respectively is a temperature point T3、T4A lower pressure output value;
3) calculating a compensated pressure output value U 'according to the formula (2)'TIn the formula (2), a0Zero position of the sensor at ambient temperature, b0Is the sensitivity of the sensor at normal temperature
The first-order linear formula in the step 1) is shown as the formula (1), wherein a in the formula (1)T、bTRespectively the zero position and the sensitivity of the sensor at a certain temperature T ℃, and P is the measured pressure value of the sensor; u shapeTFor sensor pressure output value
UT=aT+bT×P(1)。
The output of the pressure sensor at room temperature from equation 1 is:
U0=a0+b0×P (4)
wherein,
a(T)=a0+α(T-T0)*Y(FS)
b(T)=b0+β(T-T0)*Y(FS) (3)
wherein alpha is a zero temperature coefficient; beta is the sensitivity temperature coefficient, and Y (FS) is the full scale output value.
From the formulae (1), (2), (3) and (4), a temperature-compensated pressure output value U 'can be obtained'TComprises the following steps:
the response of the silicon piezoresistive pressure sensor varies with temperature, as shown in table 1. The measuring range of the sensor is 0-35 kPa (gauge pressure), the compensation temperature is 0-50 ℃, and the excitation power supply is 1 mA.
TABLE 1 pressure output of silicon pressure sensor as a function of temperature
Keeping the temperature T constant, for the pressure P and the output value UTFitting to obtain a first-order linear fitting formula; fitting the zero position a and the sensitivity b at different temperatures to obtain second-order linear fitting formulas a (T) and b (T).
When T isA≤T≤TBThe pressure output at T ℃ is:
the pressure output values of other temperature points of the sensor can be calculated by the formula (5), and the compensated pressure output value can be obtained by substituting the result into the formula (4).
The compensation results of each point after the algorithm compensation of the invention are shown in the following table 2:
TABLE 2 Algorithm Compensation results for points after temperature Compensation
The compensation results of the rest of temperature points compensated by the algorithm of the invention are shown in the following table 3:
TABLE 3 Compensation results of points after temperature compensation by linear interpolation algorithm
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can substitute or change the technical solution of the present invention and the inventive concept within the technical scope of the present invention.
Claims (3)
1. A compensation method for temperature drift of a silicon piezoresistive pressure sensor comprises the following steps:
1) in the temperature interval [ T1,T2]Inner, T1、T2Are all temperature values, and T1<T2Selecting a plurality of temperature points T, keeping the temperature T unchanged, collecting pressure output values under different pressures P, calculating a first-order linear formula of the pressure output values by a linear fitting method, and calculating each temperature by performing second-order linear fitting on a zero point a and a sensitivity b of each temperature point according to the first-order linear formulaSecond order fitting formulas a (T) and b (T) of the degree points, and obtaining zero points a corresponding to different temperature points T according to the second order fitting formulas a (T) and b (T)TAnd sensitivity bT;
2) In the temperature interval [ T1,T2]Setting a known selected fitting temperature point T, and judging the fitting temperature interval [ T ] in which the temperature point T is positioned3,T4],T1、T2、T3、T4Are all temperature values, and T1<T3≤T≤T4<T2By the linear difference formulaCalculating the pressure output value U of the temperature point TTWherein U is3、U4Respectively is a temperature point T3、T4A lower pressure output value;
3) calculating a compensated pressure output value U according to the formula (2)T', in the formula (2), a0Zero position of the sensor at ambient temperature, b0Is the sensitivity of the sensor at normal temperature
2. The silicon piezoresistive pressure sensor of claim 1, having a temperature driftThe compensation method is characterized in that the first-order linear formula in the step 1) is shown as the formula (1), and a in the formula (1)T、bTRespectively the zero position and the sensitivity of the sensor at a certain temperature T ℃, and P is the measured pressure value of the sensor; u shapeTFor sensor pressure output value
UT=aT+bT×P (1)。
3. The method for compensating temperature drift of a silicon piezoresistive pressure sensor according to claim 2, wherein the second order fitting equations a (t) and b (t) in step 1) are respectively:
a(T)=a0+α(T-T0)*Y(FS)
b(T)=b0+β(T-T0)*Y(FS) (3)
wherein alpha is a zero temperature coefficient; beta is the sensitivity temperature coefficient, and Y (FS) is the full scale output value.
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Cited By (10)
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---|---|---|---|---|
CN109323792A (en) * | 2018-11-15 | 2019-02-12 | 航宇救生装备有限公司 | A kind of intelligent temperature-compensation method based on ejector seat program controller pressure sensor |
CN109425461A (en) * | 2017-09-05 | 2019-03-05 | 上海融德机电工程设备有限公司 | Intelligent pressure transmitter and its temperature-compensation method |
CN109668674A (en) * | 2019-02-26 | 2019-04-23 | 厦门乃尔电子有限公司 | A kind of high-precision temperature compensation circuit and method of silicon piezoresistance type pressure sensor |
CN110553786A (en) * | 2019-10-11 | 2019-12-10 | 北京七星华创流量计有限公司 | Pressure sensor compensation method and system |
CN111487006A (en) * | 2020-04-16 | 2020-08-04 | 南京高华科技股份有限公司 | Micro differential pressure sensor based on stress isolation structure |
CN111946422A (en) * | 2019-05-16 | 2020-11-17 | 丰田自动车株式会社 | Abnormal Diagnosis Device for Vehicle Internal Combustion Engine |
CN113720524A (en) * | 2021-08-26 | 2021-11-30 | 北京七星华创流量计有限公司 | Pressure detection method and pressure detection system |
CN114935428A (en) * | 2022-05-09 | 2022-08-23 | 大连奥托股份有限公司 | Compensation method for drift of force transducer of laminating equipment |
CN115014629A (en) * | 2022-06-15 | 2022-09-06 | 广东乐心医疗电子股份有限公司 | Temperature drift compensation method and device for pressure sensor |
CN116124360A (en) * | 2023-04-14 | 2023-05-16 | 新乡北方车辆仪表有限公司 | Method for self-judging out-of-tolerance output of piezoresistive pressure sensor |
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Cited By (14)
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CN109425461A (en) * | 2017-09-05 | 2019-03-05 | 上海融德机电工程设备有限公司 | Intelligent pressure transmitter and its temperature-compensation method |
CN109323792A (en) * | 2018-11-15 | 2019-02-12 | 航宇救生装备有限公司 | A kind of intelligent temperature-compensation method based on ejector seat program controller pressure sensor |
CN109668674A (en) * | 2019-02-26 | 2019-04-23 | 厦门乃尔电子有限公司 | A kind of high-precision temperature compensation circuit and method of silicon piezoresistance type pressure sensor |
CN109668674B (en) * | 2019-02-26 | 2023-10-03 | 厦门乃尔电子有限公司 | High-precision temperature compensation circuit and method for silicon piezoresistive pressure sensor |
CN111946422A (en) * | 2019-05-16 | 2020-11-17 | 丰田自动车株式会社 | Abnormal Diagnosis Device for Vehicle Internal Combustion Engine |
CN110553786B (en) * | 2019-10-11 | 2021-09-24 | 北京七星华创流量计有限公司 | Pressure sensor compensation method and system |
CN110553786A (en) * | 2019-10-11 | 2019-12-10 | 北京七星华创流量计有限公司 | Pressure sensor compensation method and system |
CN111487006A (en) * | 2020-04-16 | 2020-08-04 | 南京高华科技股份有限公司 | Micro differential pressure sensor based on stress isolation structure |
CN113720524A (en) * | 2021-08-26 | 2021-11-30 | 北京七星华创流量计有限公司 | Pressure detection method and pressure detection system |
CN114935428A (en) * | 2022-05-09 | 2022-08-23 | 大连奥托股份有限公司 | Compensation method for drift of force transducer of laminating equipment |
CN114935428B (en) * | 2022-05-09 | 2023-11-03 | 大连奥托股份有限公司 | A compensation method for the drift of the load cell of pressing equipment |
CN115014629A (en) * | 2022-06-15 | 2022-09-06 | 广东乐心医疗电子股份有限公司 | Temperature drift compensation method and device for pressure sensor |
CN116124360A (en) * | 2023-04-14 | 2023-05-16 | 新乡北方车辆仪表有限公司 | Method for self-judging out-of-tolerance output of piezoresistive pressure sensor |
CN116124360B (en) * | 2023-04-14 | 2023-07-25 | 新乡北方车辆仪表有限公司 | Method for self-judging out-of-tolerance output of piezoresistive pressure sensor |
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