CN106435470A - Baking cavity structure achieving automatic cleaning and automatic cleaning method of baking cavity structure - Google Patents
Baking cavity structure achieving automatic cleaning and automatic cleaning method of baking cavity structure Download PDFInfo
- Publication number
- CN106435470A CN106435470A CN201610983031.2A CN201610983031A CN106435470A CN 106435470 A CN106435470 A CN 106435470A CN 201610983031 A CN201610983031 A CN 201610983031A CN 106435470 A CN106435470 A CN 106435470A
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- CN
- China
- Prior art keywords
- baking
- cavity
- cleaning
- automatic cleaning
- realizing automatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Drying Of Semiconductors (AREA)
- Particle Accelerators (AREA)
Abstract
The invention provides a baking cavity structure achieving automatic cleaning. The baking cavity structure comprises a cavity and a heater in the cavity, and is characterized in that an outer remote control cleaning module is connected with the cavity through a gas pipeline, the cleaning module is controlled through triggering signals, a coil in the module is used for ionization and gas deflection, and large-mass ions are guided into the cavity for cleaning. The invention further provides a method for conducting automatic baking cavity cleaning through the above structure. Through automatic cleaning, volatile matter, stacked on the inner wall of the cavity and the surface of the heater, of previous procedure byproducts of silicon wafers can be removed, particles in the cavity are reduced, and the situation that the cleaning effect possibly fluctuates from person to person due to the assistance of manpower is avoided; and the vacuum pumping process necessary for vacuum recovering after cavity opening is omitted as well, and the final purpose of further improving the cleaning efficiency is achieved.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly to a kind of baking cavity configuration realizing automatically cleaning and its certainly
Dynamic cleaning method.
Background technology
It is known that metal film forming is higher to the vacuum level requirements of cavity.The preestablished pressure of general cavity need to reach 10E- 8After Torr rank, silicon chip cavity of being allowed for access carries out follow-up film forming action.The equipment of therefore metal film forming be provided with baking-
Degas cavity, is blown by high-temperature baking and removes the steam of silicon chip surface attachment.
But so also bring a kind of drawback, the accessory substance on front road silicon chip volatilizees with the transpiration of steam during baking, quilt
Take away silicon chip surface, then gradually pile up on the inwall of baking cavity and the heater of baking cavity, as shown in figure 1, finally
The granule number entirely toasting cavity is caused to increase.
The cleaning way of prior art is manual wet-cleaning：Open baking chamber, realized to cavity by manual wipping
Inwall and the cleaning of heater surfaces, thus reducing the granule number in baking cavity, wash result is as shown in Figure 2.Open baking
Chamber means that cavity will be exposed in atmospheric pressure, thus cleaning finishing also needed to before returning to normal production one continuously take out true
Empty process.
Accordingly, it would be desirable to a kind of baking cavity configuration by the automatic cleaning of the triggering that imposes a condition of exploitation and its auto-cleaning method.
The volatile matter of the front road accessory substance of the silicon chip piled up can be removed by automatic cleaning on cavity inner wall and heater surfaces, reduce
Cavity endoparticle, it is to avoid the fluctuation that the cleaning performance that may cause due to making use of manpower varies with each individual, also makes to eliminate to open chamber
Recover vacuum necessary to vacuum after body, realize improving the final purpose of cleaning efficiency further.
Content of the invention
The technical problem to be solved is to remove by automatic cleaning to pile up on cavity inner wall and heater surfaces
The front road accessory substance of silicon chip volatile matter, reduce cavity endoparticle, realize further improve cleaning efficiency final purpose.
For solving above-mentioned technical problem, the present invention proposes a kind of baking cavity configuration realizing automatic cleaning, including cavity
And the heater of inside cavity is it is characterised in that an external remote purge module is connected with cavity by gas line；
Optionally, described remote purge module triggers work by control signal；
Preferably, described control signal is the basic statistical data in baking process；
Preferably, the basic statistical data of described baking process is the work that baking piece number or baking chamber add up
Time；
Optionally, there is the coil being wound around gas line in described external remote purge module
Preferably, magnetic field, gas by positively charged gas ion again in ionization pipeline are produced after described coil electricity
It is passed through in baking chamber via described gas line；
Preferably, described ionized gas is the inert gas of big quality；
Preferably, the inert gas of described big quality is argon gas；
The present invention proposes a kind of mode realizing automatic cleaning baking chamber, and external remote purge module receives control signal
Afterwards, its Inside coil is energized, ionizes inert gas, the magnetic field that isochrone circle is formed is inclined by ionizing the positively charged ion of gained
It is passed through after turning in baking chamber, Bombardment and cleaning is carried out to cavity and internal structure；
Optionally, described inert gas is argon Ar.
The cleaning way of prior art is manual wet-cleaning, opens baking chamber, is realized to cavity by manual wipping
The cleaning of inwall and heater surfaces come to reduce baking cavity in granule number.But its shortcoming is it will be apparent that artificial first
The effect of cleaning is often because the qualification of operator's action and technical ability fluctuates；Secondly, wet-cleaning is switched on
Cavity, and open baking chamber and mean that cavity will be exposed in atmospheric pressure, so cleaning finishes before returning to normal production also needing
There is a process continuously vacuumizing, this can affect manufacturing schedule.
And the structure of the present invention can have external remote purge module to start to impose a condition as control signal triggering
Automatically clean.Control condition separately need not can especially set up new statistics ginseng from existing basic statistical data in processing procedure
Number：Can be that baking silicon chip counts or toasts the cumulative operation time in chamber.There is the hot-wire coil can in remote purge module
So that by gas ionization, charged ion is sent in chamber by the gas line through being connected with baking chamber, to cavity inner wall and heater
The volatile matter of the front road accessory substance of silicon chip piled up on surface carries out physical bombardment, realizes reducing cavity endoparticle, realizes into one
Step improves the final purpose of cleaning efficiency.
As prioritization scheme, the gas that present configuration uses is the inert gas Ar of big quality.On the one hand, using inertia
, because it is difficult to participate in reaction, on the other hand, Ar mass is enough big for gas, and the carbonium after ionization can be used for cleaning cavity
Physical bombardment.
The invention allows for the auto-cleaning method based on said structure.The inventive method is whole without opening chamber
Body, therefore cleaning process eliminate after opening cavity and recover vacuum necessary to vacuum, and same realization improves further
The final purpose of cleaning efficiency.
In sum, structure and the method realizing automatically cleaning baking chamber proposed by the present invention, is touched by control signal
Send out remote purge module external, be passed through cavity after big mass gas are ionized, by above-mentioned ion pair cavity inner wall and heater table
Face carries out Bombardment and cleaning, reduces the granule number in cavity, realizes improving the final purpose of cleaning efficiency further.
Brief description
Fig. 1 is the baking cavity wall and heater photo before wet-cleaning.
Fig. 2 is the baking cavity wall and heater photo after wet-cleaning.
Fig. 3 is the schematic cross-section in the baking chamber of prior art.
Fig. 4 is the schematic cross-section in the baking chamber of the present invention.
Fig. 5 is the remote purge module coil ionized gas schematic diagram of the present invention.
Specific embodiment
For making present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Step explanation.Certainly the invention is not limited in this specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
Secondly, the present invention carries out detailed statement using schematic diagram, when describing present example in detail, for convenience of description,
Schematic diagram, should not be in this, as limitation of the invention not according to general ratio partial enlargement.
With reference to Figure of description, the invention will be further described.
Due to needing to carry out the high-temperature baking under vacuum to silicon chip and blow before metal film forming by toasting cavity, removal is attached to
The steam of silicon chip surface.This operation bring simultaneously drawback be silicon chip go forward technique byproduct residue with baking volatilization,
Gradually accumulate on the heater of baking cavity wall and baking cavity.The section in the baking chamber of prior art is as shown in figure 3, wherein
Round is inside cavity A, and B is the heater of baking silicon chip.
, using the baking cavity configuration equipped with remote purge module, its section is as shown in Figure 4 for the present embodiment.Wherein, around one
Week for cavity wall A, B is heater, and remote purge module D is connected with cavity by gas line E, and remote purge module has tactile
Signalling control control is carried out operating, by the gas ion G of the inert gas Ar of the big quality of positively charged, by gas
Fluid line E sends in chamber and carries out physical bombardment.The control signal of the present embodiment toasts the counting of piece number for silicon chip, often completes
50 silicon chip baking triggerings are once cleaned.
When being illustrated in figure 5 enforcement cleaning, the process of remote purge module coil ionized gas.Twine in remote control module
Around gas line A coil B be energized I, by be ionized into by the gas Ar of pipeline the big quality of positively charged carbonium C and
Electronics D, enters horizontal deflection by the magnetic field that hot-wire coil produces to charged particle simultaneously, by the carbonium C of the big quality of positively charged
Guiding sends into baking chamber via gas line, and cavity wall and heater are carried out with physical bombardment, removes the front road of surface sediment
The byproduct residue of technique, completes to clean.
It is also possible to the hour of baking chamber work be counted the trigger as remote control cleaning module in practical operation.
Foregoing description is only the description to the embodiment of the present invention, not any restriction to the scope of the invention, and the present invention leads
Any change that the those of ordinary skill in domain does according to the disclosure above content, modification, belong to the protection domain of claims.
Claims (10)
1. a kind of baking cavity configuration realizing automatic cleaning, the heater including cavity and inside cavity is it is characterised in that one
Individual external remote purge module is connected with cavity by gas line.
2. as claimed in claim 1 a kind of baking cavity configuration realizing automatic cleaning it is characterised in that described remote purge mould
Block triggers work by control signal.
3. as claimed in claim 2 a kind of baking cavity configuration realizing automatic cleaning it is characterised in that described control signal is
Basic statistical data in baking process.
4. as claimed in claim 3 a kind of baking cavity configuration realizing automatic cleaning it is characterised in that described baking process
Basic statistical data is the working time that baking piece number or baking chamber add up.
5. as claimed in claim 1 a kind of baking cavity configuration realizing automatic cleaning it is characterised in that described external remote control is clear
There is the coil being wound around gas line in mold cleaning block.
6. as claimed in claim 5 a kind of baking cavity configuration realizing automatic cleaning it is characterised in that after described coil electricity
Produce magnetic field, gas in ionization pipeline, positively charged gas ion is passed through after magnetic core logical circuit deflection, then via described gas line
In baking chamber.
7. as claimed in claim 6 a kind of baking cavity configuration realizing automatic cleaning it is characterised in that the described gas being ionized
Body is the inert gas of big quality.
8. as claimed in claim 7 a kind of baking cavity configuration realizing automatic cleaning it is characterised in that described big quality lazy
Property gas be argon Ar.
9. a kind of mode realizing automatic cleaning baking chamber as claimed in claim 1, external remote purge module receives and controls
After signal, to its Inside coil be energized, ionize inert gas, isochrone circle formed magnetic field by ionize gained positively charged from
It is passed through after son deflection in baking chamber, Bombardment and cleaning is carried out to cavity and internal structure.
10. as claimed in claim 9 a kind of mode realizing automatic cleaning baking chamber it is characterised in that described inert gas
For argon Ar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610983031.2A CN106435470A (en) | 2016-11-09 | 2016-11-09 | Baking cavity structure achieving automatic cleaning and automatic cleaning method of baking cavity structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610983031.2A CN106435470A (en) | 2016-11-09 | 2016-11-09 | Baking cavity structure achieving automatic cleaning and automatic cleaning method of baking cavity structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106435470A true CN106435470A (en) | 2017-02-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610983031.2A Pending CN106435470A (en) | 2016-11-09 | 2016-11-09 | Baking cavity structure achieving automatic cleaning and automatic cleaning method of baking cavity structure |
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| CN (1) | CN106435470A (en) |
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