CN106374328B - Mid-infrared fiber laser system based on the soft glass optical fiber covering any wavelength of 2-10 mu m waveband - Google Patents
Mid-infrared fiber laser system based on the soft glass optical fiber covering any wavelength of 2-10 mu m waveband Download PDFInfo
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- CN106374328B CN106374328B CN201611028661.0A CN201611028661A CN106374328B CN 106374328 B CN106374328 B CN 106374328B CN 201611028661 A CN201611028661 A CN 201611028661A CN 106374328 B CN106374328 B CN 106374328B
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- 239000013307 optical fiber Substances 0.000 title claims abstract description 145
- 239000011521 glass Substances 0.000 title abstract description 13
- 238000001069 Raman spectroscopy Methods 0.000 claims abstract description 148
- XHGGEBRKUWZHEK-UHFFFAOYSA-L tellurate Chemical compound [O-][Te]([O-])(=O)=O XHGGEBRKUWZHEK-UHFFFAOYSA-L 0.000 claims abstract description 54
- 230000003321 amplification Effects 0.000 claims abstract description 19
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 19
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 13
- 150000003346 selenoethers Chemical class 0.000 claims abstract 10
- 239000003365 glass fiber Substances 0.000 claims abstract 5
- 239000004065 semiconductor Substances 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 22
- 229910052775 Thulium Inorganic materials 0.000 claims description 19
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 claims description 19
- 230000008878 coupling Effects 0.000 claims description 18
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- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 claims 6
- 238000005253 cladding Methods 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 239000011669 selenium Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 11
- 150000004770 chalcogenides Chemical class 0.000 description 38
- 150000004771 selenides Chemical class 0.000 description 35
- -1 rare earth ion Chemical class 0.000 description 12
- 229910052761 rare earth metal Inorganic materials 0.000 description 8
- 238000005086 pumping Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
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- 238000002310 reflectometry Methods 0.000 description 3
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- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- OKOSPWNNXVDXKZ-UHFFFAOYSA-N but-3-enoyl chloride Chemical compound ClC(=O)CC=C OKOSPWNNXVDXKZ-UHFFFAOYSA-N 0.000 description 1
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- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
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- 230000007704 transition Effects 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
- H01S3/06716—Fibre compositions or doping with active elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08013—Resonator comprising a fibre, e.g. for modifying dispersion or repetition rate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094042—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a fibre laser
- H01S3/094046—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a fibre laser of a Raman fibre laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/17—Solid materials amorphous, e.g. glass
- H01S3/171—Solid materials amorphous, e.g. glass chalcogenide glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/17—Solid materials amorphous, e.g. glass
- H01S3/172—Solid materials amorphous, e.g. glass selenide glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/17—Solid materials amorphous, e.g. glass
- H01S3/177—Solid materials amorphous, e.g. glass telluride glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
- H01S3/302—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects in an optical fibre
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
本发明公开了基于软玻璃光纤覆盖2‑10μm波段任意波长的中红外光纤激光器系统，其特征在于：是将碲酸盐、硫化物和硒化物三种软玻璃光纤组合，利用其高非线性效应，实现2‑10μm波段任意波长的激光输出；整个系统包括种子光产生单元、种子光放大单元、碲酸盐光纤级联拉曼单元、硫化物光纤级联拉曼单元和硒化物光纤级联拉曼单元五个部分。本发明所基于的软玻璃光纤具有高拉曼增益系数、大拉曼频移和宽拉曼增益带宽，利用该光纤的级联受激拉曼过程，产生输出波长覆盖2‑10μm的中红外激光，进一步拓展可获得输出波长超过13μm的激光输出。
The invention discloses a mid-infrared fiber laser system based on a soft glass fiber covering any wavelength in the 2-10 μm band. , to achieve laser output at any wavelength in the 2-10μm band; the entire system includes a seed light generation unit, a seed light amplification unit, a tellurate fiber cascade Raman unit, a sulfide fiber cascade Raman unit, and a selenide fiber cascade Raman unit There are five parts to the Mann unit. The soft glass optical fiber based on the invention has high Raman gain coefficient, large Raman frequency shift and wide Raman gain bandwidth, and utilizes the cascade stimulated Raman process of the optical fiber to generate mid-infrared laser light with an output wavelength covering 2-10 μm , and further expansion can obtain a laser output with an output wavelength exceeding 13 μm.
Description
Technical field
The invention belongs to optical fiber laser fields, are related specifically to a kind of based on soft glass optical fiber covering 2-10 mu m waveband times
The mid-infrared fiber laser system of meaning wavelength.
Background technique
So far, the research of optical fiber laser is concentrated mainly on near-infrared and is especially 1.06 μm and 1.55 mu m wavebands,
Output power has been approached the theoretical limit that material can bear.In recent years, wavelength is greater than 2 μm of middle infrared band optical fiber laser
Increasingly it is taken seriously.Infrared band laser is in many necks such as biomedicine, national defence, environmental protection and public safety in 2-10 μm
Domain, which has, to be widely applied.For example, the 2.8-3.2 μm of most strong absorption bands for having corresponded to water in tissue, are optimal laser doctors
Learn to do art wave-length coverage.3.0-5.0 μm penetrates window for atmosphere, and the laser of this wave band can be used for infrared imaging illumination, orientation
Infrared counteraction and atmosphere pollution monitoring etc..The laser of the 2.5-10 μm of functional group region and fingerprint region for molecule, this wave band is available
In chemical substance identification, drugs detection, the detection of trace hazardous gas and the painless diognose of disease etc..
The laser of middle infrared band, in addition to optical fiber laser, there are also semiconductor quantum cascade lasers, parametric oscillation
Device, Transition-Metal Ions solid state laser and gas laser etc. respectively have different advantageous features.In contrast, infrared in
Optical fiber laser has many advantages, such as high reliability, high brightness, high efficiency, easy heat radiation, coherently combined easy to maintain and easy to accomplish, more
More to cause the attention of academia and industrial circle.
Mid-infrared fiber laser mainly has the classes such as rare earth ion doped optical fiber laser and Raman fiber lasers at present
Type.The representative er-doped fluoride optical fiber laser and 2.9 for having 2.7-2.8 mu m waveband in rare earth ion doped optical fiber laser
Mu m waveband mixes holmium fluoride fiber laser etc..Wherein the maximum average power of 2.8 μm of erbium doped fiber lasers has reached tens of
Watt magnitude.But rare earth ion doped optical fiber laser can only cover and correspond to the several of a small number of rare earth ion particular level transition
A wave band；Moreover, being limited by the radiationless relaxation of matrix material of optic fibre phonon, rare earth ion doped optical fiber laser is difficult to realize
Mid-infrared laser greater than 5 μm.
Raman fiber lasers generate laser based on the stimulated Raman scattering process of optical fiber, and output wavelength is in pumping wave
Single order or multistage Stokes shift on the basis of length, thus optical maser wavelength flexibility and changeability, and wide coverage.It is drawn using cascade
The wide raman gain spectrum of graceful effect and gain media is, it can be achieved that broadband tunable laser exports.Theoretically, the suitable pumping of selection
Wavelength can realize that laser exports in any wave band using stimulated Raman scattering.Raman laser power depends primarily on pumping source function
Rate, Raman gain and efficiency, the damage threshold of optical fiber and to inhibition of other nonlinear effects etc., have very big promotions sky
Between.
The research of Raman fiber laser focuses primarily upon near infrared band at present, has also realized kW grades of laser output,
As the important optical fiber laser being complementary to one another with rare earth ion doped optical fiber laser.Compared near infrared band, Raman light
Fine light technology is even more important in middle infrared band, because middle infrared band is by the rare earth ion doped laser for achieving over 4-5 μm
Export particularly difficult, and the laser wave number of middle infrared band is small, so that wider wavelength model can be achieved under same Raman frequency shift
The laser output enclosed.
Although Raman fiber laser technology is most important in middle infrared band, and middle infrared band needs Raman fiber to swash
Light technology provides new output wavelength, but so far, middle infrared Raman optical-fiber laser development is relatively slow, and the country is especially such as
This.Mainly since very good solution is not yet received around a series of underlying issues of middle infrared Raman Fiber laser technology,
Especially it is the absence of the Raman gain optical fiber with ultra-low loss and ultra-wide transmission range.
In conclusion the development of middle infrared Raman Fiber laser technology relatively lags.Some well-known sections in the world
Though grinding mechanism has been achieved with some progress, there are two clearly disadvantageous places: experiment obtains raman laser wavelength at 4 μm
Hereinafter, being essentially blank in more long-wave band；Laser output power is lower, and maximum only has several watts of magnitudes.Domestic centering infrared Raman
The research of optical-fiber laser is at the early-stage, there is not yet more influential experimental result is reported.Currently, middle infrared Raman optical-fiber laser without
By being in compared with infrared rare earth ion doped optical fiber laser, or compared with near-infrared Raman fiber laser, in highest
Power, laser output form and tunability etc. seem backward.
Summary of the invention
The present invention is to solve deficiency existing for existing mid-infrared fiber laser output wavelength, is proposed a kind of based on soft glass
The mid-infrared fiber laser system of the glass optical fiber covering any wavelength of 2-10 mu m waveband.
The present invention solves technical problem, adopts the following technical scheme that
The invention discloses a kind of mid-infrared light fibre laser based on the soft glass optical fiber covering any wavelength of 2-10 mu m waveband
Device system, it is characterised in that: the mid-infrared fiber laser system is by tellurate optical fiber, chalcogenide fiber and selenizing object light
Fine three kinds of soft glass optical fiber combinations realize the laser output of any wavelength of 2-10 mu m waveband using its high non-linearity effect；Entirely
System includes that seed light generates unit, seed optical amplification unit, tellurate optical fiber cascade Raman cell, chalcogenide fiber cascade drawing
Graceful unit and selenides optical fiber cascade five parts of Raman cell；Seed light generates unit and uses ring cavity structure, utilizes 790nm
Diode-end-pumped gain media double clad thulium doped fiber, passes through the Q impulse of 2 mu m waveband of acousto-optic modulator generation wavelength
Laser；The output light that seed light generates unit enters seed optical amplification unit, closes beam pump through multiple 790nm semiconductor lasers
Pu, mean power can be amplified to 100W magnitude；Tellurate optical fiber cascades Raman cell using tellurate optical fiber as gain media,
Join Raman Process by three classes, generates the laser of 3.64 μm of arrival；Chalcogenide fiber cascades Raman cell using vulcanization object light
Fibre is used as gain media, joins Raman Process by three classes, generates the laser of 5.89 μm of arrival；Selenides optical fiber cascades Raman list
Member joins Raman Process using selenides optical fiber as gain media, by three classes, generates the laser of 10.55 μm of arrival；Seed
Light generation unit optical wavelength is tunable in 1.90-2.10 μ m, infrared 2-10 μm of wave in the corresponding raman laser covering generated
Section.
It is specific:
The tellurate optical fiber cascade Raman cell, chalcogenide fiber cascade Raman cell and the selenides optical fiber
Cascade Raman cell is to be carved with reflection one in the both ends near zone of tellurate optical fiber, chalcogenide fiber, selenides optical fiber respectively
The fiber bragg grating of rank Raman Stokes signal to, reflection second order Raman Stokes signal fiber bragg grating
To the fiber bragg grating pair with three rank Raman Stokes signals of reflection；
It is described reflection second order Raman Stokes signal fiber bragg grating to be located at the reflection single order Raman this
The outside of the fiber bragg grating pair of lentor signal, the optical fiber Bragg light of three rank Raman Stokes signals of the reflection
Outside of the grid to the fiber bragg grating pair for being located at the reflection second order Raman Stokes signal；
The tellurate optic fibre input end is connected with the seed optical amplification unit, and the seed optical amplification unit exports 2 μ
M laser enters tellurate optical fiber by first end face coupling unit；The signal light input end and kind of the seed optical amplification unit
The laser output that sub-light generates unit is connected, and the seed light generates unit 2 μm of signal lights of output and is coupled by bundling device
Enter in the double clad thulium doped fiber II of seed optical amplification unit；The tellurate fiber-optic output and chalcogenide fiber input terminal phase
Even, the tellurate fiber-optic output laser enters chalcogenide fiber input terminal by second end face coupling unit；The vulcanization
Object fiber-optic output is connected with selenides optic fibre input end, and the chalcogenide fiber output end laser passes through third end coupling portion
Divide and enters selenides optic fibre input end.
The seed light generate unit be by 790nm semiconductor laser I, wavelength division multiplexer, double clad thulium doped fiber I,
Width tunable optic filter, acousto-optic modulator, isolator I and output coupler are connected in turn；The output coupler one
End is connected with the wavelength division multiplexer, constitutes annular chamber；The 790nm diode-end-pumped double clad thulium doped fiber I is produced
Raw 2 μm of laser, the broad-band tunable filter tuning wavelength range, the pulse that the acousto-optic modulator adjusts seed light are defeated
Out, the direction of the isolator I limitation light, makes its one-way transmission.
The seed optical amplification unit includes the first isolator II, the first 790nm semiconductor laser II, the 2nd 790nm
Semiconductor laser II, bundling device, double clad thulium doped fiber II and the second isolator II；The seed light generates unit and exports 2 μ
M pulse light passes through the conjunction beam together with the first 790nm semiconductor laser II, the 2nd 790nm semiconductor laser II
Device is coupled into double clad thulium doped fiber II, and 2 μm of pulse signal optical powers pass through the first 790nm semiconductor laser II, the
The pumping of two 790nm semiconductor laser II, is amplified in double clad thulium doped fiber II.
The Bragg grating of the reflection single order Raman Stokes signal is to, reflection second order Raman Stokes letter
Number fiber bragg grating to it is described reflection three rank Raman Stokes signals fiber bragg grating pair, be utilize
800nm femtosecond pulse laser adds double beam interferometry to be directly scribed at the tellurate optical fiber, chalcogenide fiber and selenides
On optical fiber；The Bragg grating of the reflection single order Raman Stokes signal is to, reflection second order Raman Stokes letter
Number fiber bragg grating to it is described reflection three rank Raman Stokes signals fiber bragg grating pair reflection in
Cardiac wave length corresponds respectively to single order, second order and three rank Raman Stokes signal wavelength.Reflect three rank Raman Stokes signals
Fiber bragg grating pair, one of grating is as high reflection mirror, another grating is as output coupling cavity mirror.
The core size of the tellurate optical fiber, chalcogenide fiber and selenides optical fiber respectively with 2-3.64 μm, 3.64-
The single mode mould field of 5.89 μm and 5.89-10 mu m waveband matches.
The sound-optical controller adjusts the pulse width of 2 μm of seed lights in 10-100ns, the broad-band tunable filter
Tuning wavelength range is at 1.90-2.10 μm.
The tellurate optical fiber, chalcogenide fiber and selenides optical fiber are fixed on water cooling close to the position of end coupling part
In V-groove, the middle section of the tellurate optical fiber, chalcogenide fiber and selenides optical fiber is under water.
Compared with the prior art, the beneficial effects of the present invention are embodied in:
1, the laser output of any wavelength in infrared band in 2-10 μm can be achieved in the present invention, further expands, exportable
Wavelength is up to 13 μm of laser.
2, the present invention, which uses, has high-purity, high damage threshold, high non-linearity, big Raman frequency shift, wide gain bandwidth, width thoroughly
Cross three kinds of wave-length coverage, the tellurate of ultra-low loss, arsenones and arsenic selenide soft glass optical fiber: Raman frequency shift is respectively 750cm-1、350cm-1And 250cm-1；It is respectively 0.5-4 μm, 0.8-6 μm and 1.0-11.0 μm through wave-length coverage；Loss factor difference
For < 0.2dB/m, < 0.5dB/m and < 0.5dB/m.Tellurate optical fiber, arsenones optical fiber and the arsenic selenide optical fiber of use are at 2-10 μm
Wave band has zero-dispersion wavelength.
3, Ramar laser of the invention is excited to draw by three ranks of tellurate optical fiber, arsenones optical fiber and arsenic selenide optical fiber
Graceful scattering process can make Raman fiber lasers output wavelength expand to the entire 2-10 mu m waveband of covering.
4, the present invention adds double beam interferometry directly in tellurate optical fiber, arsenones using 800nm femtosecond pulse laser
Fiber Bragg Grating on optical fiber and arsenic selenide optical fiber forms resonant cavity.Based on the light sensitive effect that femtosecond pulse generates, without to tellurium
Hydrochlorate optical fiber, chalcogenide fiber and selenides optical fiber carry the pretreatment such as hydrogen, and the pulse of 800nm wavelength can penetrate in it is infrared
Optical fiber coating enters covering and fibre core, without removing coat, improves the resistant to mechanical damage energy of fiber bragg grating finished product
Power improves the reliability of laser system.
5, the present invention needs each rank Raman to raman pump light and generation to realize 2-10 μ m wavelength range all standing
Stokes signal light is tuned.Output wavelength can be tuned by broad-band tunable filter in 1.90-2.10 μm, average
Power is 50-100mW, and repetition rate is that 10-100kHz is adjustable.Pulse width can be by control acousto-optic modulator driving signal
It is adjusted in 10-100ns.Seed through the output of 2 μm of pulse thulium-doped fiber lasers is put down optically coupling to 2 μm of thulium doped fiber amplifiers
Equal power can be amplified to 100W magnitude.
Detailed description of the invention
Fig. 1 is that the present invention is based on the mid-infrared fiber laser systems of the soft glass optical fiber covering any wavelength of 2-10 mu m waveband
Structural schematic diagram (have reflection single order, second order and three rank Raman Stokes signals optical fiber Bragg to).
Fig. 2 is single order, second order and the three rank Raman frequency shift schematic diagrames of soft glass optical fiber used in the present invention.
Figure label: I is that seed light generates unit；II is seed optical amplification unit；III is that tellurate optical fiber cascades Raman
Unit；IV is that chalcogenide fiber cascades Raman cell；V is that selenides optical fiber cascades Raman cell；1 is semiconductor laser I；2
For wavelength division multiplexer；3 be double clad thulium doped fiber I；4 be broad-band tunable filter；5 be acousto-optic modulator；6 be isolator I；
7 be output coupler；8 be the first isolator II；9 be the first 790nm semiconductor laser II；10 be the 2nd 790nm semiconductor
Laser II；11 be bundling device；12 be double clad thulium doped fiber II；13 be the second isolator II；14 be first end face coupling part
Point；15 be tellurate optical fiber；16 be the fiber bragg grating pair of the reflection single order Raman Stokes signal of tellurate optical fiber；
17 be the fiber bragg grating pair of the reflection second order Raman Stokes signal of tellurate optical fiber；18 be the anti-of tellurate optical fiber
Penetrate the fiber bragg grating pair of three rank Raman Stokes signals；19 be second end face coupling unit；20 be chalcogenide fiber；
21 be the fiber bragg grating pair of the reflection single order Raman Stokes signal of chalcogenide fiber；22 be the anti-of chalcogenide fiber
Penetrate the fiber bragg grating pair of second order Raman Stokes signal；23 be the three rank Raman Stokes of reflection of chalcogenide fiber
The fiber bragg grating pair of signal；24 be third end coupling part；25 be selenides optical fiber；26 be the anti-of selenides optical fiber
Penetrate the fiber bragg grating pair of single order Raman Stokes signal；27 be the reflection second order Raman Stokes of selenides optical fiber
The fiber bragg grating pair of signal；28 be the optical fiber Bragg light of the three rank Raman Stokes signal of reflection of selenides optical fiber
Grid pair.
Specific embodiment
Below in conjunction with the drawings and specific embodiments, the following further describes the technical solution of the present invention.
As shown in Figure 1, in covering of the present embodiment based on soft glass optical fiber infrared 2-10 mu m waveband Raman fiber laser
Device system, including seed light generate unit I, seed optical amplification unit II, tellurate optical fiber and cascade Raman cell III, sulfide
Optical fiber cascades Raman cell IV and selenides optical fiber cascades five parts Raman cell V.
Wherein: it is to mix thulium light by 790nm semiconductor laser I 1, wavelength division multiplexer 2, double clad that seed light, which generates unit I,
Fine I 3, width tunable optic filter 4, acousto-optic modulator 5, isolator I6 and output coupler 7 are connected in turn；Export coupling
7 one end of clutch is connected with wavelength division multiplexer 2, constitutes annular chamber.Seed light generates unit I and is pumped by 790nm semiconductor laser 1
Pu double clad thulium doped fiber 3 generates 2 μm of laser, passes through the adjusting Q pulse laser of 5 generation wavelength of acousto-optic modulator, 2 mu m waveband.Its is defeated
Wavelength can be tuned by broad-band tunable filter 4 in 1.90-2.10 μm out, mean power 50-100mW, repetition rate
It is adjustable for 10-100kHz；Pulse width can be adjusted by controlling acousto-optic modulator driving signal in 10-100ns.
Seed optical amplification unit II includes the first isolator II 8, the second isolator II 13, and the first 790nm semiconductor swashs
Light device II 9, the 2nd 790nm semiconductor laser II 10, bundling device 11 and double clad thulium doped fiber II 12；Seed light generates
Unit exports 2 μm of pulse lights and two high power 790nm semiconductor laser (the first 790nm semiconductor laser II 9
Pass through bundling device 11 together with the 2nd 790nm semiconductor laser II 10) output light and be coupled into double clad thulium doped fiber II
In 12, two high power 790nm semiconductor laser output 790nm high power laser lights pump 2 μm in double clad thulium doped fiber
Pulse light, 2 μm of pulse lights are amplified, and mean power can be amplified to 100W magnitude.
Tellurate optical fiber cascades Raman cell III, chalcogenide fiber cascade Raman cell IV and the cascade of selenides optical fiber and draws
Graceful unit V is to be carved with reflection one in the both ends near zone of tellurate optical fiber 15, chalcogenide fiber 20, selenides optical fiber 25 respectively
The fiber bragg grating of rank Raman Stokes signal is to (respectively the reflection single order Raman Stokes of tellurate optical fiber is believed
Number fiber bragg grating to 16, chalcogenide fiber reflection single order Raman Stokes signal fiber bragg grating pair
21, selenides optical fiber reflection single order Raman Stokes signal fiber bragg grating to 26), reflection second order Raman this support
The fiber bragg grating of gram this signal is to (the respectively optical fiber cloth of the reflection second order Raman Stokes signal of tellurate optical fiber
Glug grating is to the fiber bragg grating of the reflection second order Raman Stokes signal of 17, chalcogenide fiber to 22, selenides
Optical fiber reflection second order Raman Stokes signal fiber bragg grating to 27), reflection three rank Raman Stokes signals
Fiber bragg grating to (point than be tellurate optical fiber three rank Raman Stokes signal of reflection fiber bragg grating
To the fiber bragg grating of the three rank Raman Stokes signal of reflection of 18, chalcogenide fiber to the anti-of 23, selenides optical fiber
The fiber bragg grating of three rank Raman Stokes signals is penetrated to 28).Reflect the optical fiber cloth of second order Raman Stokes signal
Glug grating to be located at reflection single order Raman Stokes signal fiber bragg grating pair outside, reflection three rank Ramans this
The fiber bragg grating of lentor signal is to the fiber bragg grating pair for being located at reflection second order Raman Stokes signal
Outside.
Each rank Bragg grating adds double beam interferometry to inscribe to 800nm femtosecond pulse laser is all made of.Based on femtosecond
The light sensitive effect that pulse generates carry the pretreatment such as hydrogen without centering infrared optical fiber, and during the pulse of 800nm wavelength can penetrate
Infrared optical fiber coat enters covering and fibre core, without removing coat, improves the resistance to mechanical damage of fiber bragg grating finished product
Hurt ability, improves the reliability of laser system.
15 input terminal of tellurate optical fiber is connected with seed optical amplification unit II, and seed optical amplification unit II exports 2 μm of laser
Enter tellurate optical fiber 15 by first end face coupling unit 14；The signal light input end and seed light of seed optical amplification unit II
The laser output for generating unit I is connected, and seed light generates unit I 2 μm of signal lights of output and is coupled into kind by bundling device 11
In the double clad thulium doped fiber II 12 of sub-light amplifying unit II；15 output end of tellurate optical fiber and 20 input terminal of chalcogenide fiber
It is connected, 15 output end laser of tellurate optical fiber enters 20 input terminal of chalcogenide fiber by second end face coupling unit 19；Vulcanization
Object light 20 output ends of fibre are connected with 25 input terminal of selenides optical fiber, and 20 output end laser of chalcogenide fiber passes through third end coupling
Part 24 enters 25 input terminal of selenides optical fiber.
The 2 μm of pulsed lights exported from seed optical amplification unit II enter tellurate optical fiber cascade Raman as raman pump source
Part III, 15 3 rank Raman scattering laser of tellurate optical fiber (wavelength is 3.64 μm) enter chalcogenide fiber grade as pumping source
Join Raman part IV, three rank Raman scattering laser of chalcogenide fiber (wavelength is 5.89 μm) enters selenides optical fiber as pumping source
Raman part V is cascaded, finally realizes and optical maser wavelength is expanded to 10.55 μm.Tellurate optical fiber 15, chalcogenide fiber 20 and selenizing
Object light fibre 25 3 kinds of optical fiber core size respectively with 2-3.64 μm, 3.64-5.89 μm and the single mode mould field of 5.89-10 mu m waveband
Match, so that Light Energy is concentrated on fibre core and participate in Raman scattering processes, improve lasing efficiency.
Tellurate optical fiber 15 is used as gain media, Raman frequency shift 750cm-1, join Raman Process by three classes, generate
3.64 μm of stokes light.The fiber bragg grating of the reflection single order Raman Stokes signal of tellurate optical fiber to 16,
The fiber bragg grating of the reflection second order Raman Stokes signal of tellurate optical fiber is to 17 and the reflection three of tellurate optical fiber
The fiber bragg grating of the fiber bragg grating pair of rank Raman Stokes signal is right respectively to 18 reflection kernel wavelength
Answer Yu Yijie, second order and three rank Raman Stokes signal wavelength, respectively 2.35 μm, 2.86 μm and 3.64 μm.
Chalcogenide fiber 20 is used as gain media, Raman frequency shift 350cm-1, join Raman Process by three classes, generate
5.89 μm of stokes light.The fiber bragg grating of the reflection single order Raman Stokes signal of chalcogenide fiber to 21,
The fiber bragg grating of the reflection second order Raman Stokes signal of chalcogenide fiber is to 22 and the reflection three of chalcogenide fiber
The fiber bragg grating of rank Raman Stokes signal corresponds respectively to single order, second order and three ranks to 23 reflection kernel wavelength
Raman Stokes signal wavelength, respectively 4.17 μm, 4.88 μm and 5.89 μm.
Selenides optical fiber 25 is used as gain media, Raman frequency shift 250cm-1, join Raman Process by three classes, generate
10.55 μm stokes light.The fiber bragg grating of the reflection single order Raman Stokes signal of selenides optical fiber to 26,
The fiber bragg grating of the reflection second order Raman Stokes signal of selenides optical fiber is to 27 and the reflection three of selenides optical fiber
The fiber bragg grating of rank Raman Stokes signal corresponds respectively to single order, second order and three ranks to 28 reflection kernel wavelength
Raman Stokes signal wavelength, respectively 6.91 μm, 8.35 μm and 10.55 μm.
Tellurate optical fiber 15, chalcogenide fiber 20 and selenides optical fiber 25 reflect the optical fiber of each rank Raman Stokes signal
Bragg grating reflects single order and second order Raman Stokes signal to the resonant cavity for respectively constituting the first to three rank raman lasers
Fiber bragg grating to being high reflectance, reflectivity is all larger than~95%, has wide reflection bandwidth (~10nm)；Instead
The fiber bragg grating pair of three rank Raman Stokes signals is penetrated, one of grating is as input hysteroscope, respectively in 3.64 μ
M, nearby there is the~reflection bandwidth of 10nm 5.89 μm and 10.55 μm, reflectivity is greater than~95%, another grating is as output
Hysteroscope nearby has the~reflection bandwidth of 1nm at 3.64 μm, 5.89 μm and 10.55 μm respectively, and reflectivity is according to output power
It is selected, can be~70-90%.
In order to obtain the laser output of any wavelength in 2-10 μ m, need to carry out wavelength tuning.As shown in table 1, lead to
Crossing 4 output wavelength of broad-band tunable filter can tune in 1.90-2.10 μ m, corresponding tellurate optical fiber one,
Two and three rank Raman Stokes signal wave-length coverages are respectively 2.22-2.49 μm, 2.66-3.06 μm and 3.32-3.97 μm；Phase
One, two and three rank Raman Stokes signal wave-length coverages of corresponding chalcogenide fiber are respectively 3.76-4.61 μm, 4.33-
5.50 μm and 5.51-6.81 μm；One, two and three rank Raman Stokes signal wave-length coverages of corresponding selenides optical fiber point
It Wei not be 5.85-8.21 μm, 6.85-10.33 μm and 8.27-13.93 μm.Each rank Raman peak values wavelength of tellurate optical fiber cannot cover
The maximum region of lid is 2.49-2.66 μm of (~257cm-1) and 3.06-3.32 μm of (~256cm-1).Due to tellurate optical fiber 15
Raman gain width be more than 300cm-1, therefore it is flat to combine seed light to generate each rank Raman peak values caused by unit I wavelength tuning
The Raman gain spectrum width with tellurate optical fiber is moved, the wave-length coverage of 2.49-2.66 μm He 3.06-3.32 μm can be covered；And then it ties
The cascade Raman Process of chalcogenide fiber and selenides optical fiber is closed, it can be achieved that wavelength all standing in 2-10 μ m.
In order to realize wide wavelength, the output of high efficiency laser, for infrared band cascade Raman fiber lasers in high power
For, it needs to solve the heat deposition problem in trace impurity, fiber coupling end face, proposes thermal management scheme: close to coupling
One section of tellurate optical fiber 15, chalcogenide fiber 20 and the selenides optical fiber 25 for closing part are fixed in water cooling V-groove, and tellurate
Optical fiber 15, chalcogenide fiber 20 and 25 middle section of selenides optical fiber are directly under water or fix on the cooling plate or be wound on
In cooling column.
The present invention is based on the mid-infrared fiber laser systems of the soft glass optical fiber covering any wavelength of 2-10 mu m waveband, can be real
The raman laser output of infrared 2-10 mu m waveband in existing further expands and can get the laser output that output wavelength is more than 13 μm.
Table 1
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| CN109103737A (en) * | 2018-10-31 | 2018-12-28 | 深圳技术大学（筹） | A kind of tunable middle infrared Raman optical fiber laser of broad band wavelength |
| CN110518445B (en) * | 2019-09-03 | 2021-01-29 | 电子科技大学 | Broadband tunable optical parameter chirped pulse amplification system based on soliton self-frequency shift |
| CN112803233A (en) * | 2020-12-31 | 2021-05-14 | 厦门大学 | Medium infrared laser generation method based on multi-order diamond Raman and tunable medium infrared laser |
| CN113783092A (en) * | 2021-09-16 | 2021-12-10 | 安徽光智科技有限公司 | Picosecond seed laser based on annular cavity structure |
| CN114512890A (en) * | 2022-02-21 | 2022-05-17 | 山东飞博赛斯光电科技有限公司 | A Widely Tuned Single-Frequency Light Source in a New Communication Band |
| CN115113335B (en) * | 2022-05-18 | 2024-02-09 | 江苏师范大学 | Medium-wavelength and long-wavelength infrared integrated optical fiber beam combiner and preparation method thereof |
| CN116544761B (en) * | 2023-07-06 | 2023-09-22 | 广东省新兴激光等离子体技术研究院 | System for producing compressible coherent Raman pulse fiber laser |
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