CN106371170A - Array waveguide type light path conversion interconnection chip - Google Patents

Abstract

An arrayed waveguide type optical path conversion interconnection chip, comprising: a substrate, which is rectangular; an arrayed waveguide core area, the arrayed waveguide core area includes a plurality of waveguides, and each waveguide is a tapered strip, which are arranged in sequence The upper surface of the substrate; an upper cladding layer covering the upper surface of the substrate and wrapping the arrayed waveguide core area to form an arrayed waveguide type optical path conversion interconnection chip. The process of the multi-channel waveguide type optical path conversion interconnection chip produced by the invention is simple, and can greatly reduce the difficulty of coupling and integrated production of photonic hybrid integrated devices.

Description

Arrayed waveguide type optical path conversion interconnection chip

technical field

The invention belongs to the field of semiconductor communication, in particular to an arrayed waveguide type optical path conversion interconnection chip.

Background technique

With the rapid development of communication and information technology, people have put forward higher and higher requirements for the integration of photonic devices. However, due to the current monolithic integration technology, active chips and passive chips cannot be realized on the same substrate. Integration and vertical coupling between photonic chips of different structures and sizes are very difficult. Hybrid integration has become the main development direction of current photonic devices.

In the process of designing and manufacturing photonic hybrid integrated devices, how to realize the vertical coupling between different photonic chips and the interconnection between small-pitch high-integration chips and large-pitch chips, discrete chips and fiber arrays has become one of the important research contents. one. Therefore, it is of great significance for the manufacture and application of photonic hybrid integrated devices to fabricate arrayed waveguide type optical path conversion interconnection chips that meet the needs of photonic hybrid integrated devices in a relatively simple way.

The arrayed waveguide type optical path conversion interconnection chip is a chip with a structural design and a simple manufacturing process, and can realize the vertical coupling of optical paths between different chips and the interconnection between small-pitch high-integration chips and large-pitch chips, discrete chips, and optical fiber arrays. .

Contents of the invention

The object of the present invention is to provide an arrayed waveguide type optical path conversion and interconnection chip to realize the vertical coupling of optical paths between different chips and the interconnection between small-pitch high-integration chips and large-pitch chips, discrete chips and optical fiber arrays. The multi-channel waveguide type optical path conversion interconnection chip designed and manufactured by the present invention has a simple process, and can greatly reduce the difficulty of coupling and integrated manufacturing of photonic hybrid integrated devices.

The present invention provides an arrayed waveguide type optical path conversion interconnection chip, including:

A substrate, which is rectangular;

An arrayed waveguide core area, the arrayed waveguide core area includes a plurality of waveguides, each waveguide is in the shape of a tapered strip, which are arranged in sequence on the substrate;

An upper cladding layer covers the upper surface of the substrate and wraps the arrayed waveguide core area to form an arrayed waveguide type optical path conversion interconnection chip.

The beneficial effect of the invention is that it can realize vertical coupling of optical paths between different chips and interconnection between small-pitch high-integration chips and large-pitch chips, discrete chips and optical fiber arrays. The arrayed waveguide type optical path conversion interconnection chip provided by the invention has simple design and manufacturing process, and can greatly reduce the difficulty of coupling and integrated manufacturing of photonic hybrid integrated devices.

Description of drawings

In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings, wherein:

FIG. 1 is a schematic structural diagram of an arrayed waveguide type optical path conversion interconnection chip;

Figure 2 is a schematic diagram of the application of the arrayed waveguide type optical path conversion interconnection chip;

Fig. 3 is a schematic diagram of the θ angle of the arrayed waveguide type optical path conversion interconnection chip;

Among them, reference signs:

1-Photonic chips with vertical emission and reception characteristics of optical signals

2-Optical signal transmission and reception window

3-Arrayed waveguide type optical path conversion interconnection chip substrate

4-Arrayed waveguide type optical path conversion interconnection chip rate core area

5-Arrayed waveguide type optical path conversion interconnect chip cladding

6-Large pitch chip, discrete chip or fiber array

detailed description

Please refer to Fig. 1, which is a schematic structural view of the arrayed waveguide type optical path conversion interconnection chip of the present invention, including:

A substrate 3 is rectangular, and the material of the substrate 3 is intrinsic silicon dioxide, with a thickness of 15-20 μm, which is mainly used to protect the arrayed waveguide core 4, and at the same time as a light-transmitting layer, so that the optical signal can It enters the total reflection end face of the arrayed waveguide core region 4 through it.

Arrayed waveguide core 4, the arrayed waveguide core 4 includes a plurality of waveguides, each waveguide is a tapered strip, which is arranged on the substrate 3 in sequence, the cross-section of the large diameter end of the arrayed waveguide core 4 The size of the arrayed waveguide core region 4 is 6-8×8-11 μm, the material of the arrayed waveguide core region 4 is doped silicon dioxide, and the thickness is 6-8 μm; it is mainly used for optical signals in the arrayed waveguide type optical path conversion interconnection chip Light path direction transformation and transmission.

An upper cladding layer 5, which covers the upper surface of the substrate 3, and wraps the arrayed waveguide core region 4 to form an optical path conversion interconnection chip. The material of the upper cladding layer 5 is intrinsic silicon dioxide, and the upper cladding layer 5 is made of intrinsic silicon dioxide. The cladding layer 5 has a thickness of 500-1500 μm.

Wherein the end face side of the small diameter end of the arrayed waveguide core 4 and the substrate 3 and the upper cladding 5 are a downward slope, forming an included angle θ, and the included angle θ is 35-45 degrees.

Please refer to FIG. 2 , which is a schematic diagram of the application of the arrayed waveguide type optical circuit conversion interconnection chip of the present invention, and the arrows in the figure indicate the transmission direction of the optical signal. The optical signal is coupled into the arrayed waveguide type optical circuit conversion interconnection chip composed of 3/4/5 from the photonic integrated chip with the vertical emission and reception characteristics of the optical signal at the lower end 1, and then transmitted to the right end 6 large-pitch chips, discrete chips or In the optical fiber array; or the optical signal is transmitted in the opposite direction. The optical signal is transmitted from the 6 large-pitch chips, discrete chips or optical fiber array at the right end to the array waveguide optical circuit conversion interconnection chip composed of 3/4/5, and then passes through the optical path at the left end. The transmission direction conversion is coupled to the photonic integrated chip 1 with the vertical emission and reception characteristics of optical signals at the lower end, thereby realizing the transmission of optical signals between the photonic integrated chip 1 with the characteristics of vertical emission and reception of optical signals and large-pitch chips, discrete chips or optical fiber arrays 6 free transfer between.

If we directly couple the photonic integrated chip 1 with the vertical emission and reception characteristics of optical signals at the lower end to the large-pitch chip, discrete chip or optical fiber array 6 at the right end, it will be very difficult, and the coupling loss will be very high. We use the arrayed waveguide type optical path conversion interconnection chip composed of 3/4/5 in the middle to connect the photonic integrated chip 1 with the vertical emission and reception characteristics of optical signals at the lower end and the large-pitch chip, discrete chip or optical fiber array 6 at the right end to realize the optical signal in the middle. The transmission and processing between large-size photonic chips and small-pitch high-integration photonic chips make them together form a photonic hybrid integrated device. The multi-channel waveguide type optical path conversion interconnection chip designed by us can greatly reduce the difficulty of manufacturing photonic hybrid integrated devices and improve the coupling efficiency, which is of great significance for the manufacture and application of photonic hybrid integrated devices.

Please refer to Fig. 3, which is a schematic diagram of the θ angle of the arrayed waveguide type optical path conversion interconnection chip of the present invention, n1 and n2 are the refractive indices of the air and the arrayed waveguide core region 4 in the figure, using the principle of total optical reflection: when the transmission angle of light When the formula is satisfied: sin(90°-θ)≥n ₁ /n ₂ , the transmitted light will be totally reflected on the surface of the transmission medium, so as to achieve the purpose of changing the transmission direction of the optical path; The refractive index of region 4 is 1.45 as an example, the calculated sin(90°-θ)≥0.6897, that is, θ≤46.4°; at this time, the optical signal realizes the optical path conversion at the left end of the arrayed waveguide core region 4, thereby coupling to the lower end with optical In the photonic integrated chip 1 with vertical signal transmission and reception characteristics, the free transmission of optical signals between the photonic integrated chip 1 with optical signal vertical transmission and reception characteristics and the large-pitch chip, discrete chip or optical fiber array 6 is realized.

The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention, and are not intended to limit the present invention. Within the spirit and principles of the present invention, any modifications, equivalent replacements, improvements, etc., shall be included in the protection scope of the present invention.

Claims (8)

1. a kind of Waveguide array type light path converting interconnects chip, comprising:

One substrate, is rectangle；

An array waveguide core region, this Waveguide array core area includes multiple waveguides, and each waveguide is the bar shaped with taper, and it is sequentially It is arranged in above substrate；

One top covering, it covers the upper surface of substrate, and coats Waveguide array core area, forms the interconnection of Waveguide array type light path converting Chip.

2. Waveguide array type light path converting interconnection chip according to claim 1, wherein Waveguide array core area miner diameter end End face side and substrate and top covering are a downward inclined-plane, form an angle theta.

3. Waveguide array type light path converting according to claim 2 interconnects chip, and wherein said angle theta is 35 degree- 46.4 degree.

4. Waveguide array type light path converting according to claim 1 interconnects chip, and the material of wherein said substrate is this Levy silicon dioxide.

5. Waveguide array type light path converting according to claim 4 interconnects chip, and the thickness of wherein said substrate is 15- 20μm.

6. Waveguide array type light path converting according to claim 1 interconnects chip, wherein, in described Waveguide array core area The size in the section of single waveguide bigger diameter end is 6-8 × 8-11 μm.

7. Waveguide array type light path converting according to claim 1 interconnects chip, and the material in wherein said core area is to mix Miscellaneous silicon dioxide, thickness is 6-8 μm.

8. Waveguide array type light path converting according to claim 1 interconnects chip, and the material of wherein said top covering is Native silicon dioxide, thickness is 500-1500 μm.