CN106367724A - Sputtering device - Google Patents
Sputtering device Download PDFInfo
- Publication number
- CN106367724A CN106367724A CN201610859100.9A CN201610859100A CN106367724A CN 106367724 A CN106367724 A CN 106367724A CN 201610859100 A CN201610859100 A CN 201610859100A CN 106367724 A CN106367724 A CN 106367724A
- Authority
- CN
- China
- Prior art keywords
- mounting seat
- target
- target mounting
- sputter equipment
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 43
- 238000009434 installation Methods 0.000 claims abstract description 25
- 239000013077 target material Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 71
- 238000005516 engineering process Methods 0.000 claims description 14
- 230000000740 bleeding effect Effects 0.000 claims description 10
- 239000010405 anode material Substances 0.000 claims description 5
- 239000010406 cathode material Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims 1
- 239000007888 film coating Substances 0.000 abstract 5
- 238000009501 film coating Methods 0.000 abstract 5
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 29
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- -1 Argon ion Chemical class 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a sputtering device which comprises a film coating cavity, a first target material installation base, a first base plate installation base, a second target material installation base and a second base plate installation base. The film coating cavity comprises a top wall and a bottom wall which are opposite in parallel. The first target material installation base is arranged at the upper half portion of the interior of the film coating cavity, and a target material installation face of the first target material installation base faces the top wall. The first base plate installation base is arranged between the first target material installation base and the top wall, and a base plate carrying face of the first base plate installation base faces the target material installation face of the first target material installation base. The second target material installation base is arranged at the lower half portion of the interior of the film coating cavity, and a target material installation face of the second target material installation base faces the bottom wall. The second base plate installation base is arranged between the second target material installation base and the bottom wall, and a base plate carrying face of the second base plate installation base faces the target material installation face of the second target material installation base. The sputtering device is provided with the twinning target material installation bases which are arranged back to back, a target material installed on each target material installation base is independently controlled and forms a Plasma area of a base plate obtained after film coating, the film forming uniformity and controllability are greatly improved, in addition, two films subjected to coating are formed at the same time, and the film sputtering efficiency of the sputtering device is greatly improved.
Description
Technical field
The present invention relates to a kind of sputter equipment, specifically, it is related to a kind of there is at least one pair of twin target mounting seat
Magnetic control sputtering device.
Background technology
The positive charge obtaining from ion bombardment process can be passed to and closely connect with it by DC sputtering requirement target
Tactile negative electrode, thus the method can only sputter conductive material, is unsuitable for insulant.This is because insulation during bombardment insulation target
The ionic charge of target material surface cannot neutralize, and this will lead to target surface current potential to raise, and applied voltage is nearly all added on target, two interpolars
Acceleration of ions will diminish with the chance of ionization, or even can not ionize, lead to be unable to continuous discharge and even discharge stopping, thus leading
Sputtering is caused to stop.Therefore for the very poor nonmetallic target of insulation target or electric conductivity, radio frequency sputtering method (rf) must be used.
Using in twin-target sputtering technology, sputtering source is two plane magnetic control targets installed side by side, during power supply is
Frequency power, it has two outfans, and this two outfans are connected to the plane magnetic control of two identical installations arranged side by side
On target, double targets work simultaneously.Advantage using twin-target sputtering technology is to solve when being coated with dielectric film due to target side
Edge deposition covers dielectric film and guiding discharge beats arc phenomenon and due to anode surface deposition covering dielectric film (anode disappears)
Lead to plasma arcs wild effect.But, the shortcoming using twin-target sputtering technology is: the spacing between target side by side
Determine that two targets region that operationally plasma (plasma) is formed can produce repetition or make somebody a mere figurehead, directly affect whole
The uniformity of substrate film forming.
Content of the invention
In order to solve above-mentioned technical problem, it is an object of the invention to provide a kind of sputter equipment, comprising: plated film chamber
Body, the roof including parallel surface pair and diapire；First target mounting seat, be arranged at top half in described plated film cavity and its
Target installed surface is towards described roof；First substrate mounting seat, is arranged between described first target mounting seat and described roof
And its substrate placed side is towards the target installed surface of described first target mounting seat；Second target mounting seat, is arranged at described plating
The latter half in membrane cavity body and its target installed surface is towards described diapire；Second substrate mounting seat, is arranged at described second target
Between material mounting seat and described diapire and its substrate placed side is towards the target installed surface of described second target mounting seat.
Further, when described sputter equipment carries out sputtering technology, described first target mounting seat is used for installing by the moon
The target that pole material is made, described second target mounting seat is used for installing the target being made up of anode material, or described first
Target mounting seat is used for installing the target being made up of anode material, and described second target mounting seat is used for installing by cathode material system
The target becoming.
Further, described plated film cavity also includes side wall, and described side wall is arranged between described roof and described diapire,
Described side wall is connected respectively with described roof and described diapire.
Further, described sputter equipment also includes: at least one bleeding point and at least one inflation inlet, described bleeding point
May be contained within the wall of described side with described inflation inlet, and described bleeding point and described inflation inlet all connect with described plated film cavity
Logical.
Further, described sputter equipment also includes medium-high frequency power supply, and described medium-high frequency power supply is connected respectively to described
One target mounting seat and described second target mounting seat, to install to described first target mounting seat and described second target respectively
Seat provides medium-high frequency alternating current.
Further, when described sputter equipment carries out sputtering technology, described medium-high frequency power supply is simultaneously to described first target
Material mounting seat and described first target mounting seat provide medium-high frequency alternating current, so that described first target mounting seat and described first
Target mounting seat works simultaneously.
Further, described sputter equipment also includes: the first sputtering baffle plate, the second sputtering baffle plate；First sputtering baffle plate sets
It is placed between described first target mounting seat and described first substrate mounting seat, the second sputtering baffle plate setting is in described second target
Between mounting seat and described second substrate mounting seat.
Further, the quantity of described first target mounting seat is two or more, the number of described first substrate mounting seat
Measure as two or more, two or more first target mounting seats are set up in parallel, and two or more first substrate mounting seats are arranged side by side
Setting, described first target mounting seat is relative corresponding one by one with described first substrate mounting seat.
Further, the quantity of described second target mounting seat is two or more, the number of described second substrate mounting seat
Measure as two or more, two or more second target mounting seats are set up in parallel, and two or more second substrate mounting seats are arranged side by side
Setting, described second target mounting seat is relative corresponding one by one with described second substrate mounting seat.
Further, the quantity of described first target mounting seat is one, and the quantity of described first substrate mounting seat is one
Individual；The quantity of described second target mounting seat is one, and the quantity of described second substrate mounting seat is one.
Beneficial effects of the present invention: the sputter equipment of the present invention has the twin target mounting seat of dorsad spread configuration, often
The target installed in individual target mounting seat individually controls and forms one piece of plasma (plasma) region by coated basal plate, pole
Improve into greatly film uniformity and controllability, two pieces by plated film film forming simultaneously in addition, greatly improves the plated film efficiency of sputter equipment.
Brief description
By combining the following description that accompanying drawing is carried out, above and other aspect of embodiments of the invention, feature and advantage
Will become clearer from, in accompanying drawing:
Fig. 1 is the structural representation of the sputter equipment according to the first embodiment of the present invention；
Fig. 2 is the structural representation of sputter equipment according to the second embodiment of the present invention；
Fig. 3 is the structural representation of sputter equipment according to the third embodiment of the invention.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to describing embodiments of the invention in detail.However, it is possible to come real in many different forms
Apply the present invention, and the present invention should not be construed as limited to the specific embodiment that illustrates here.On the contrary, these enforcements are provided
Example is to explain the principle of the present invention and its practical application, so that others skilled in the art are it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.In the accompanying drawings, identical label will be used for table all the time
Show identical element.
Fig. 1 is the structural representation of the sputter equipment according to the first embodiment of the present invention.
With reference to Fig. 1, included according to the sputter equipment of the first embodiment of the present invention: plated film cavity 10, the first target are installed
Seat the 20, second target mounting seat 30, first substrate mounting seat 40, second substrate mounting seat 50, medium-high frequency power supply 60.
Specifically, plated film cavity 10 includes roof 11, diapire 12, left side wall 13 and right side wall 14.Roof 11 and diapire
12 parallel to each other faced by, left side wall 13 and right side wall 14 parallel to each other faced by.Left side wall 13 and right side wall 14 may be contained within roof
Between 11 and diapire 12, wherein, left side wall 13 is connected respectively with the left end of roof 11 and diapire 12, right side wall 14 and roof 11 and
The right-hand member of diapire 12 connects respectively.So, roof 11, diapire 12, left side wall 13 and right side wall 14 surround formation plated film cavity 10.
First target mounting seat 20, the second target mounting seat 30, first substrate mounting seat 40, second substrate mounting seat 50 are equal
It is installed in plated film cavity 10.And medium-high frequency power supply 60 is arranged at outside plated film cavity 10.
Specifically, the first target mounting seat 20 is installed in the top half of plated film cavity 10.First target mounting seat 20
There is the target installed surface 21 for installing target, when the first target mounting seat 20 is installed in the top half of plated film cavity 10
When, the target installed surface 21 of the first target mounting seat 20 is towards roof 11.First substrate mounting seat 40 is installed in the first target
Between mounting seat 20 and roof 11.First substrate mounting seat 40 has for installing by the substrate mounting surface faces 41 of coated basal plate, when
When first substrate mounting seat 40 is installed between the first target mounting seat 20 and roof 11, the substrate of first substrate mounting seat 40
Installed surface 41 is towards the target installed surface 21 of the first target mounting seat 20.
Second target mounting seat 30 is installed in the latter half of plated film cavity 10.Second target mounting seat 30 have for
The target installed surface 31 of target, when the second target mounting seat 30 is installed in the latter half of plated film cavity 10, second are installed
The target installed surface 31 of target mounting seat 30 is towards diapire 12.First substrate mounting seat 40 is installed in the second target mounting seat 30
And diapire 12 between.Second substrate mounting seat 50 has for installing by the substrate mounting surface faces 51 of coated basal plate, works as second substrate
When mounting seat 50 is installed between the second target mounting seat 30 and diapire 12, the substrate mounting surface faces 51 of second substrate mounting seat 50
Target installed surface 31 towards the second target mounting seat 30.
When the sputter equipment according to the first embodiment of the present invention carries out sputtering technology, the target of the first target mounting seat 20
Material installed surface 21 installs the target being made up of cathode material, and the target installed surface 31 of the second target mounting seat 30 is installed by anode material
Expect the target made.Or, when being operated according to the sputter equipment of the first embodiment of the present invention, the first target mounting seat
20 target installed surface 21 installs the target being made up of anode material, the target installed surface 31 of the second target mounting seat 30 install by
The target that cathode material is made.
Medium-high frequency power supply 60 is connected respectively to the first target mounting seat 20 and second substrate mounting seat 50, for the first target
Material mounting seat 20 and second substrate mounting seat 50 provide medium-high frequency alternating current, so that the first target mounting seat 20 and second substrate peace
Dress seat 50 is operated.When the sputter equipment according to the first embodiment of the present invention carries out sputtering technology, medium-high frequency power supply 60
There is provided medium-high frequency alternating current to the first target mounting seat 20 and second substrate mounting seat 50 simultaneously, so that the first target mounting seat
20 and second substrate mounting seat 50 be operated simultaneously.
Before carrying out in sputtering technology, need to carry out evacuation in plated film cavity 10, and carrying out sputtering technology
When, need to be filled with noble gases, the argon such as commonly used into plated film cavity 10, it is ionized in positively charged in sputtering
Argon ion, therefore also includes according to the sputter equipment of the first embodiment of the present invention: 70, three inflation inlet 80a of a bleeding point,
80b and 80c.It should be noted that the quantity of bleeding point and inflation inlet with the quantity shown in the present embodiment is not in the present invention
Limit.
Bleeding point 70 and three inflation inlets 80a, 80b, 80c are all arranged on left side wall 13, and bleeding point 70 and
Three inflation inlets 80a, 80b, 80c all connect with plated film cavity 10.Bleeding point 70 was used for before sputtering technology is carried out to plating
Carry out evacuation in membrane cavity body 10.Three inflation inlets 80a, 80b, 80c are used for when sputtering technology is carried out into plated film cavity 10
It is filled with noble gases.
Further, also included according to the sputter equipment of the first embodiment of the present invention: first sputtering baffle plate 90a, second
Sputtering baffle plate 90b.Wherein, the first sputtering baffle plate 90a is arranged between the first target mounting seat 20 and first substrate mounting seat 40,
And the second sputtering baffle plate 90b is arranged between the second target mounting seat 30 and second substrate mounting seat 50.
When the sputter equipment according to the first embodiment of the present invention is in the pre-sputtering stage, the first sputtering baffle plate 90a and the
Two sputtering baffle plate 90b are closed, and make the first sputtering baffle plate 90a be blocked in the target installed surface of the first target mounting seat 20
21 front end and make the second sputtering baffle plate 90b be blocked in the front end of the target installed surface 31 of the second target mounting seat 30, can be effective
The pollution by coated basal plate installed is avoided on the substrate mounting surface faces 41 to first substrate mounting seat 40 and second substrate is pacified
The pollution by coated basal plate installed on the substrate mounting surface faces 51 of dress seat 50；When the sputtering dress according to the first embodiment of the present invention
Put in normal sputter procedure, the first sputtering baffle plate 90a and the second sputtering baffle plate 90b are opened, and are arranged on target installed surface 21
On target and the target being arranged on target installed surface 31 sputtered by after the bombardment of inert gas particles, thus in quilt
Thin film is formed on coated basal plate.
In the present embodiment, the first target mounting seat 20, the second target mounting seat 30, first substrate mounting seat 40 and
The quantity of two substrate mounting seats 50 is one, but the present invention is not restricted to this.
Fig. 2 is the structural representation of sputter equipment according to the second embodiment of the present invention.With reference to Fig. 2, and shown in Fig. 1
Sputter equipment is a difference in that: the quantity of the first target mounting seat 20 is two, and the quantity of first substrate mounting seat 40 is two；
And the quantity of the second target mounting seat 30 and second substrate mounting seat 50 is one.Two the first target mounting seats 20 are arranged side by side
Setting, two first substrate mounting seats 40 are set up in parallel, and the first target mounting seat 20 is with first substrate mounting seat 40 one by one
Relatively corresponding.It should be noted that the first target mounting seat 20 and first substrate mounting seat 40 are not limited with two, they can
Think three or more.
Fig. 3 is the structural representation of sputter equipment according to the third embodiment of the invention.With reference to Fig. 3, and shown in Fig. 1
Sputter equipment is a difference in that: the quantity of the first target mounting seat 20 and first substrate mounting seat 40 is two, and the second target
The quantity of material mounting seat 30 and second substrate mounting seat 50 is also two.Two the first target mounting seats 20 are set up in parallel, and two
Individual first substrate mounting seat 40 is set up in parallel, and the first target mounting seat 20 is relative right one by one with first substrate mounting seat 40
Should.Two the second target mounting seats 30 are set up in parallel, and two second substrate mounting seats 50 are set up in parallel, and the second target is installed
Seat 30 is relative corresponding one by one with second substrate mounting seat 50.It should be noted that the first target mounting seat 20, the second target are installed
Seat 30, first substrate mounting seat 40 and second substrate mounting seat 50 are not limited with two, and they can be three or more
Multiple.
In sum, sputter equipment has the twin target installation of dorsad spread configuration according to an embodiment of the invention
Seat, the target that each target mounting seat is installed individually controls and forms one piece of plasma (plasma) area by coated basal plate
Domain, is greatly improved into film uniformity and controllability, and two pieces by plated film film forming simultaneously in addition, greatly improves the plated film effect of sputter equipment
Rate.
Although illustrate and describing the present invention with reference to specific embodiment, it should be appreciated by those skilled in the art that:
In the case of without departing from the spirit and scope of the present invention being limited by claim and its equivalent, can here carry out form and
Various change in details.
Claims (10)
1. a kind of sputter equipment is it is characterised in that include:
Plated film cavity, the roof including parallel surface pair and diapire；
First target mounting seat, is arranged at top half in described plated film cavity and its target installed surface is towards described roof；
First substrate mounting seat, is arranged between described first target mounting seat and described roof and its substrate placed side is towards institute
State the target installed surface of the first target mounting seat；
Second target mounting seat, is arranged at the latter half in described plated film cavity and its target installed surface is towards described diapire；
Second substrate mounting seat, is arranged between described second target mounting seat and described diapire and its substrate placed side is towards institute
State the target installed surface of the second target mounting seat.
2. sputter equipment according to claim 1 is it is characterised in that when described sputter equipment carries out sputtering technology, institute
State the first target mounting seat for install the target be made up of cathode material, described second target mounting seat is used for installation by anode
The target that material is made, or described first target mounting seat is for installing the target being made up of anode material, described second target
Material mounting seat is used for installing the target being made up of cathode material.
3. sputter equipment according to claim 1 and 2 is it is characterised in that described plated film cavity also includes side wall, described side
Wall is arranged between described roof and described diapire, and described side wall is connected respectively with described roof and described diapire.
4. sputter equipment according to claim 3 is it is characterised in that described sputter equipment also includes: at least one pumping
Mouth and at least one inflation inlet, described bleeding point and described inflation inlet may be contained within the wall of described side, and described bleeding point and institute
State inflation inlet all to connect with described plated film cavity.
5. sputter equipment according to claim 1 is it is characterised in that described sputter equipment also includes medium-high frequency power supply, institute
State medium-high frequency power supply and be connected respectively to described first target mounting seat and described second target mounting seat, with respectively to described first
Target mounting seat and described second target mounting seat provide medium-high frequency alternating current.
6. sputter equipment according to claim 5 is it is characterised in that when described sputter equipment carries out sputtering technology, institute
State medium-high frequency power supply provides medium-high frequency alternating current to described first target mounting seat and described first target mounting seat simultaneously, so that
Described first target mounting seat and described first target mounting seat work simultaneously.
7. sputter equipment according to claim 1 is it is characterised in that described sputter equipment also includes: the first sputtering baffle plate,
Second sputtering baffle plate；First sputters baffle plate setting between described first target mounting seat and described first substrate mounting seat, the
Two sputtering baffle plate settings are between described second target mounting seat and described second substrate mounting seat.
8. sputter equipment according to claim 1 it is characterised in that described first target mounting seat quantity be two or
Multiple, the quantity of described first substrate mounting seat is two or more, and two or more first target mounting seats are set up in parallel, two
Individual or multiple first substrate mounting seats are set up in parallel, and described first target mounting seat is relative one by one with described first substrate mounting seat
Corresponding.
9. the sputter equipment according to claim 1 or 8 is it is characterised in that the quantity of described second target mounting seat is two
Individual or multiple, the quantity of described second substrate mounting seat is two or more, and two or more second target mounting seats set side by side
Put, two or more second substrate mounting seats are set up in parallel, described second target mounting seat and described second substrate mounting seat one
One is relatively corresponding.
10. sputter equipment according to claim 1 it is characterised in that described first target mounting seat quantity be one,
The quantity of described first substrate mounting seat is one；The quantity of described second target mounting seat is one, described second substrate peace
The quantity of dress seat is one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610859100.9A CN106367724A (en) | 2016-09-28 | 2016-09-28 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610859100.9A CN106367724A (en) | 2016-09-28 | 2016-09-28 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106367724A true CN106367724A (en) | 2017-02-01 |
Family
ID=57898146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610859100.9A Pending CN106367724A (en) | 2016-09-28 | 2016-09-28 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106367724A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107142452A (en) * | 2017-04-27 | 2017-09-08 | 柳州豪祥特科技有限公司 | The magnetron sputtering that quality of forming film can be improved prepares the system of ito thin film |
| CN112593196A (en) * | 2020-12-21 | 2021-04-02 | 无锡爱尔华光电科技有限公司 | Bidirectional coating magnetron sputtering method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196400A (en) * | 1990-08-17 | 1993-03-23 | At&T Bell Laboratories | High temperature superconductor deposition by sputtering |
| CN1718847A (en) * | 2005-07-26 | 2006-01-11 | 武汉大学 | A pair of target twin magnetron sputtering ion plating deposition device |
| CN1948546A (en) * | 2006-11-07 | 2007-04-18 | 武汉大学 | Medium frequency twin magnetron sputtering device for cooling metal gallium target |
| US20070158181A1 (en) * | 2006-01-12 | 2007-07-12 | Seagate Technology Llc | Method & apparatus for cathode sputtering with uniform process gas distribution |
| CN104109835A (en) * | 2013-04-17 | 2014-10-22 | 上海和辉光电有限公司 | Sputtering equipment and sputtering method |
-
2016
- 2016-09-28 CN CN201610859100.9A patent/CN106367724A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196400A (en) * | 1990-08-17 | 1993-03-23 | At&T Bell Laboratories | High temperature superconductor deposition by sputtering |
| CN1718847A (en) * | 2005-07-26 | 2006-01-11 | 武汉大学 | A pair of target twin magnetron sputtering ion plating deposition device |
| US20070158181A1 (en) * | 2006-01-12 | 2007-07-12 | Seagate Technology Llc | Method & apparatus for cathode sputtering with uniform process gas distribution |
| CN1948546A (en) * | 2006-11-07 | 2007-04-18 | 武汉大学 | Medium frequency twin magnetron sputtering device for cooling metal gallium target |
| CN104109835A (en) * | 2013-04-17 | 2014-10-22 | 上海和辉光电有限公司 | Sputtering equipment and sputtering method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107142452A (en) * | 2017-04-27 | 2017-09-08 | 柳州豪祥特科技有限公司 | The magnetron sputtering that quality of forming film can be improved prepares the system of ito thin film |
| CN107142452B (en) * | 2017-04-27 | 2019-07-23 | 柳州豪祥特科技有限公司 | The magnetron sputtering that can be improved quality of forming film prepares the system of ito thin film |
| CN112593196A (en) * | 2020-12-21 | 2021-04-02 | 无锡爱尔华光电科技有限公司 | Bidirectional coating magnetron sputtering method |
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