CN106356327A - Device for reducing growth of back of wafer - Google Patents
Device for reducing growth of back of wafer Download PDFInfo
- Publication number
- CN106356327A CN106356327A CN201611023030.XA CN201611023030A CN106356327A CN 106356327 A CN106356327 A CN 106356327A CN 201611023030 A CN201611023030 A CN 201611023030A CN 106356327 A CN106356327 A CN 106356327A
- Authority
- CN
- China
- Prior art keywords
- load ring
- wafer rear
- wafer
- device reducing
- reducing wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012546 transfer Methods 0.000 claims description 16
- 238000009434 installation Methods 0.000 claims description 6
- 239000004744 fabric Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000009423 ventilation Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- NOQGZXFMHARMLW-UHFFFAOYSA-N Daminozide Chemical group CN(C)NC(=O)CCC(O)=O NOQGZXFMHARMLW-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a device for reducing growth of the back of a wafer. The device provided by the invention comprises a transferring plate, a load ring arranged on the transferring plate and a vacuum device, wherein a circular groove concentric with the load ring is formed on a panel of the load ring; a ventilation hole used for ventilating towards the load ring is formed in each load ring mounting part on the transferring plate; and the vacuum device is communicated with the ventilation holes. According to the invention, in an oxide growth process, the wafer is sucked on the load ring by virtue of the vacuum device, so that no gap exists between the wafer and the load ring, a reaction source can not flow into the back of the wafer, and an oxide is not grown any more.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to a kind of reduce what wafer rear grew
Device.
Background technology
With semiconductor technology development, ald (atomic layer deposition, ald) technology is due to filling out
Hole ability is strong, stepcoverage is good, temperature is low, high retentivity the advantages of, industry has started to more and more utilize this technology.
And the atomic layer precipitated oxides in the board growth with novellus vector series, due to the design of its board
Defect, reaction source can enter into the back side of wafer, thus leading to wafer frontside growth outer, the back side of wafer is also and then given birth to
Long, due to the problem of reactant used, the oxide thickness growing at the edge (edge) of wafer rear, and in wafer rear
Between (center) do not grow oxide because reaction source fails to reach.So remove in oxide process in follow-up wet method,
Within the regular hour, the oxide of wafer rear mid portion is entirely removed, but because brim-portion thickness is thicker, just
Have the residual of oxide.During subsequent wet removes silicon nitride sin, the silicon nitride sin at the back side is due to edge oxide
Residual so that silicon nitride sin at dorsal edge one circle also has hundreds of angstrom cannot remove.Because wafer rear has silicon nitride
The residual of sin, has influence on the measurement of the level (leveling) of wafer, and then has influence on dissipating of photoresistance exposure process in subsequent technique
Jiao and ovl transition problem.
Accordingly, it is desirable to be able to propose a kind of technical scheme, enabling when wafer growth, wafer rear does not have
The growth of atomic layer precipitated oxides, thus do not affect the problem defocusing with ovl transformation of the photoresistance exposure process of subsequent technique.
Content of the invention
The technical problem to be solved is that there is drawbacks described above in prior art, provides a kind of minimizing wafer
The device of back side growth, enabling when wafer growth, wafer rear does not have the growth of atomic layer deposition shallow lake oxide,
Thus not affecting the problem defocusing with ovl transformation of the photoresistance exposure process of subsequent technique.
In order to realize above-mentioned technical purpose, according to the present invention, there is provided a kind of device of minimizing wafer rear growth, bag
Include: transfer blade, the load ring being arranged on transfer blade and vacuum equipment；Wherein, the panel of load ring is formed with and bears
Carry the concentric circular groove of ring；Each load ring installation position on transfer blade is disposed with for ventilating towards load ring
Blow vent, wherein vacuum equipment are connected with blow vent.
Preferably, in the described device reducing wafer rear growth, the width of described circular groove between 0.5 to
1.5 between.
Preferably, in the described device reducing wafer rear growth, the width of described circle ditch is 1cm.
Preferably, in the described device reducing wafer rear growth, the depth of described circular groove is between 1 to 2.5
Between.
Preferably, in the described device reducing wafer rear growth, the depth of described circular groove is 2cm.
Preferably, in the described device reducing wafer rear growth, each load ring is installed in the phase of transfer blade
Between adjacent alar part.
Preferably, each the load ring installation portion in the described device reducing wafer rear growth, on transfer blade
At least 3 fixing devices for dead load ring are disposed with position.
Preferably, in the described device reducing wafer rear growth, described blow vent be arranged in fixing device
At position.
Preferably, the described device reducing wafer rear growth also includes: the control device of vacuum equipment.
In the present invention, in the growth course of oxide, by the device of vacuum equipment, wafer is inhaled in load ring
On, make there is not space between wafer and load ring, so that reaction source cannot flow into wafer rear and no longer grow oxide.
Brief description
In conjunction with accompanying drawing, and by reference to detailed description below, it will more easily have more complete understanding to the present invention
And its adjoint advantages and features are more easily understood, wherein:
Fig. 1 schematically shows the load ring of the device reducing wafer rear growth according to the preferred embodiment of the invention
Structural representation.
Fig. 2 schematically shows the transfer blade of the device reducing wafer rear growth according to the preferred embodiment of the invention
Structural representation.
Fig. 3 schematically shows totally showing of the device reducing wafer rear growth according to the preferred embodiment of the invention
It is intended to.
It should be noted that accompanying drawing is used for the present invention is described, and the unrestricted present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.And, in accompanying drawing, same or like element indicates same or like label.
Specific embodiment
In order that present disclosure is more clear and understandable, with reference to specific embodiments and the drawings in the present invention
Appearance is described in detail.
On the board of existing novellus vector series, due to the defect of its board design, precipitated with atomic layer
The oxide that method grows out, in addition to wafer frontside growth, the back side of wafer also and then grows, due to wafer rear oxidation
The growth of thing, to subsequently bringing many unnecessary problems.In consideration of it, the present invention passes through to improve various structures, can avoid
The growth of wafer rear.Grow atomic layer precipitated oxides under apparatus of the present invention, will not have atomic layer deposition in wafer rear
The residual of shallow lake oxide, thus do not affect the problem defocusing with ovl transformation of the photoresistance exposure process of subsequent technique.
Fig. 1 schematically shows the load ring of the device reducing wafer rear growth according to the preferred embodiment of the invention
Structural representation.Fig. 2 schematically shows turning of the device reducing wafer rear growth according to the preferred embodiment of the invention
Move plate structure schematic diagram.Fig. 3 schematically shows the device reducing wafer rear growth according to the preferred embodiment of the invention
General illustration.
As shown in Figure 1, Figure 2 and Figure 3, the device reducing wafer rear growth according to the preferred embodiment of the invention includes:
Transfer blade 100, the load ring 200 being arranged on transfer blade 100 and vacuum equipment (not shown)；Wherein, in load ring 200
Panel on be formed with the circular groove 10 (as shown in Figure 1) concentric with load ring 200；Each load on transfer blade 100
Blow vent for ventilating towards load ring is disposed with ring installation position, wherein vacuum equipment is connected with blow vent.
Preferably, the width of described circular groove 10 is between 0.5 to 1.5.It is further preferred that described circular groove
10 width is 1cm.
Preferably, the depth of described circular groove 10 is between 1 to 2.5.It is further preferred that described circular groove 10
Depth be 2cm.
And, for example, each load ring 200 is installed between the adjacent wings 20 of transfer blade 100.
It is further preferred that being disposed with for dead load ring on each the load ring installation position on transfer blade 100
200 at least 3 fixing devices 30.
It is further preferred that described blow vent be arranged at the position of fixing device 30.
Wherein, described blow vent is connected with built-in ventilation through hole 31.
Preferably, the device reducing wafer rear growth according to the preferred embodiment of the invention also includes: vacuum equipment
Control device.
In the present invention, in the growth course of oxide, by the device of vacuum equipment, wafer is inhaled in load ring
On, make there is not space between wafer and load ring, so that reaction source cannot flow into wafer rear and no longer grow oxide.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in description " first ", " the
Two ", " 3rd " etc. describes each assembly being used only in differentiation description, element, step etc., rather than is used for representing each
Logical relation between assembly, element, step or ordering relation etc..
Although it is understood that the present invention is disclosed as above with preferred embodiment, but above-described embodiment being not used to
Limit the present invention.For any those of ordinary skill in the art, without departing under technical solution of the present invention ambit,
The technology contents that the disclosure above all can be utilized are made many possible variations and modification, or are revised as to technical solution of the present invention
Equivalent embodiments with change.Therefore, every content without departing from technical solution of the present invention, according to the technical spirit pair of the present invention
Any simple modification made for any of the above embodiments, equivalent variations and modification, all still fall within the scope of technical solution of the present invention protection
Interior.
And it should also be understood that the present invention is not limited to specific method described herein, compound, material, system
Make technology, usage and application, they can change.It should also be understood that term described herein be used merely to describe specific
Embodiment, rather than be used for limiting the scope of the present invention.Must be noted that herein and claims used in
Singulative " one ", " a kind of " and " being somebody's turn to do " include complex reference, unless context explicitly indicates that contrary.Therefore, example
As the citation of " element " meaned with the citation to one or more elements, and including known to those skilled in the art
Its equivalent.Similarly, as another example, the citation of " step " or " device " is meaned to one or
Multiple steps or the citation of device, and potentially include secondary step and second unit.Should be managed with broadest implication
All conjunctions that solution uses.Therefore, word "or" should be understood that the definition with logical "or", rather than logical exclusive-OR
Definition, unless context explicitly indicates that contrary.Structure described herein will be understood as also quoting from the function of this structure
Equivalent.Can be interpreted that approximate language should be understood like that, unless context explicitly indicates that contrary.
And, the method for the embodiment of the present invention and/or the realization of system may include manual, automatic or execute selected in combination
Task.And, the real instrument of the embodiment of the method according to the invention and/or system and equipment, available operating system is led to
Cross hardware, software or a combination thereof and realize several selected tasks.
Claims (9)
1. a kind of device reducing wafer rear growth is it is characterised in that include: transfer blade, the load being arranged on transfer blade
Ring and vacuum equipment；Wherein, the circular groove concentric with load ring is formed with the panel of load ring；On transfer blade
Each load ring installation position on be disposed with blow vent for ventilating, wherein vacuum equipment towards load ring with blow vent even
Logical.
2. the device reducing wafer rear growth according to claim 1 is it is characterised in that the width of described circular groove
Between 0.5 to 1.5.
3. according to claim 1 and 2 reduce wafer rear growth device it is characterised in that described circle ditch width
Spend for 1cm.
4. the device reducing wafer rear growth according to claim 1 and 2 is it is characterised in that described circular groove
Depth is between 1 to 2.5.
5. the device reducing wafer rear growth according to claim 1 and 2 is it is characterised in that described circular groove
Depth is 2cm.
6. the device reducing wafer rear growth according to claim 1 and 2 is it is characterised in that each load ring is pacified
It is contained between the adjacent wings of transfer blade.
7. the device reducing wafer rear growth according to claim 1 and 2 is it is characterised in that every on transfer blade
At least 3 fixing devices for dead load ring are disposed with individual load ring installation position.
8. the device reducing wafer rear growth according to claim 1 and 2 is it is characterised in that described blow vent and cloth
Put at the position of fixing device.
9. the device reducing wafer rear growth according to claim 1 and 2 is it is characterised in that also include: vacuum equipment
Control device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611023030.XA CN106356327A (en) | 2016-11-18 | 2016-11-18 | Device for reducing growth of back of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611023030.XA CN106356327A (en) | 2016-11-18 | 2016-11-18 | Device for reducing growth of back of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106356327A true CN106356327A (en) | 2017-01-25 |
Family
ID=57861751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611023030.XA Pending CN106356327A (en) | 2016-11-18 | 2016-11-18 | Device for reducing growth of back of wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106356327A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107881487A (en) * | 2017-11-09 | 2018-04-06 | 上海华力微电子有限公司 | A kind of edge-protected coil structures, reative cell and chemical vapor depsotition equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6511543B1 (en) * | 1997-12-23 | 2003-01-28 | Unaxis Balzers Aktiengesellschaft | Holding device |
| CN104233227A (en) * | 2014-09-23 | 2014-12-24 | 上海华力微电子有限公司 | Atomic layer deposition equipment and method |
| CN204424238U (en) * | 2015-03-20 | 2015-06-24 | 中芯国际集成电路制造(北京)有限公司 | Wafer mounting apparatus and vapor phase growing apparatus |
-
2016
- 2016-11-18 CN CN201611023030.XA patent/CN106356327A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6511543B1 (en) * | 1997-12-23 | 2003-01-28 | Unaxis Balzers Aktiengesellschaft | Holding device |
| CN104233227A (en) * | 2014-09-23 | 2014-12-24 | 上海华力微电子有限公司 | Atomic layer deposition equipment and method |
| CN204424238U (en) * | 2015-03-20 | 2015-06-24 | 中芯国际集成电路制造(北京)有限公司 | Wafer mounting apparatus and vapor phase growing apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107881487A (en) * | 2017-11-09 | 2018-04-06 | 上海华力微电子有限公司 | A kind of edge-protected coil structures, reative cell and chemical vapor depsotition equipment |
| CN107881487B (en) * | 2017-11-09 | 2019-12-03 | 上海华力微电子有限公司 | A kind of edge-protected coil structures, reaction chamber and chemical vapor depsotition equipment |
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| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170125 |
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| RJ01 | Rejection of invention patent application after publication |