CN106356317A - Picking and placing cavity - Google Patents
Picking and placing cavity Download PDFInfo
- Publication number
- CN106356317A CN106356317A CN201510414154.XA CN201510414154A CN106356317A CN 106356317 A CN106356317 A CN 106356317A CN 201510414154 A CN201510414154 A CN 201510414154A CN 106356317 A CN106356317 A CN 106356317A
- Authority
- CN
- China
- Prior art keywords
- plate
- hoisting gear
- chamber
- lowering
- chamber body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 230000008569 process Effects 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 230000000630 rising effect Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010276 construction Methods 0.000 description 4
- 230000036772 blood pressure Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- NBGBEUITCPENLJ-UHFFFAOYSA-N Bunazosin hydrochloride Chemical compound Cl.C1CN(C(=O)CCC)CCCN1C1=NC(N)=C(C=C(OC)C(OC)=C2)C2=N1 NBGBEUITCPENLJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a picking and placing cavity. The picking and placing cavity comprises a cavity body and a first board lifting device, a second board lifting device and a heating device which are arranged in the cavity body. The cavity body is provided with a first inlet/outlet and a second inlet/outlet. The heating device is used for heating an unprocessed board to allow the same to reach processing temperature. The first board lifting device is used for lifting a processed board. The second board lifting device is opposite to the first board lifting device and used for lifting the unprocessed board. When first board lifting device lifts the process board, the second board lifting device lifts the heated unprocessed board to allow the same to enter a semiconductor processing system through the first inlet/outlet. When the second board lifting device descends the unprocessed board, the first board lifting device descends the processed board to allow the same to leave the cavity body through the second inlet/outlet.
Description
Technical field
The present invention picks and places chamber with regard to one kind, espespecially a kind of by the plate being oppositely arranged lowering or hoisting gear arrange
In same chamber main body so that the plate that it is accepted can accordingly lift pick and place chamber.
Background technology
In general, current semiconductor processing system (such as piece leaf formula (cluster) or online (in line)
Process system) typically require be configured be taken into chamber and take out chamber to carry out respectively leading without more than half
The substrate of body fabrication process film releasing operation and completed manufacture of semiconductor process substrate take piece
Operation, this design often increase semiconductor processing system chamber configuration on required occupancy space with
The construction cost of required consuming.
Although the problems referred to above can pass through carrying out picking and placeing being designed to deal with of piece operation using same chamber,
It is because this design needs through multiple chamber during robotic arm carries out picking and placeing piece operation
Blood pressure lowering and back pressure operate, therefore can additionally cause the substrate of semiconductor processing system to pick and place flow process and take and take a lot of work
Problem.On the other hand, if changing the design using double-deck chamber, then can lead to for being taken again
The stroke design of the robotic arm of film releasing operation is excessively complicated, thus increase robotic arm burden and
Difficulty on picking and placeing piece design for the semiconductor processing system.
Content of the invention
It is an object of the invention to provide a kind of the plate being oppositely arranged lowering or hoisting gear is arranged on same
In chamber body so that the plate that it is accepted can accordingly lift pick and place chamber, above-mentioned to solve
Problem.
According to one embodiment of the invention, the present invention pick and place chamber comprise a chamber body, one first
Plate lowering or hoisting gear, one second plate lowering or hoisting gear, and a heater.This chamber body has
One first gateway and one second gateway, this first gateway is used for being communicated in semiconductor processing procedure
System.This first plate lowering or hoisting gear is arranged in this chamber body, in a processed plate from
When this semiconductor processing system enters this chamber body via this first gateway, accept this processed plate
Part lifts between one first lifting position and one first down position.This second plate lowering or hoisting gear
It is arranged in this chamber body and is located at and lift with this first plate under this first plate lowering or hoisting gear
Device is relative, for, when a untreated plate enters this chamber body via this second gateway, holding
Connect this untreated plate to lift between one second lifting position and one second down position.This heating
Device is arranged in this chamber body, for accepting this untreated plate in this second plate lowering or hoisting gear
When rising to this second lifting position, heat this untreated plate to process temperatures.When this second plate
When part lowering or hoisting gear accepts this untreated plate drop to this second down position, this first plate lifts
Device is accepted this processed plate and is dropped to this first down position from this first lifting position, so that should
Processed plate can leave this chamber body via this second gateway.When this first plate lowering or hoisting gear
When accepting this processed plate and rising to this first lifting position, this second plate lowering or hoisting gear is accepted
Heat this untreated plate completing and rise to this second lifting position from this second down position, so that
This untreated plate can enter this semiconductor processing system via this first gateway.
In sum, the present invention is arranged on same chamber master using by the plate being oppositely arranged lowering or hoisting gear
Internal so that the design that can accordingly lift of plate that it is accepted, taken with reaching to be not required to be respectively configured
Enter chamber and take out chamber to carry out plate and pick and place piece operation and only to need to carry out a blood pressure lowering and return
Press operation can complete the purpose of plate loading or unloading operation.Consequently, it is possible to the present invention does not only effectively reduce
The semiconductor processing system space of required occupancy and construction cost of required consuming on chamber configures, with
The plate that Shi Yike simplifies semiconductor processing system picks and places flow process, thus significantly lifting manufacture of semiconductor
The plate of system picks and places efficiency.
Can be described in detail by invention below with regard to the advantages and spirit of the present invention and institute's accompanying drawings obtain
Further understanding.
Brief description
Fig. 1 is the schematic perspective view picking and placeing chamber being proposed according to one embodiment of the invention.
Fig. 2 be Fig. 1 pick and place chamber along the partial cutaway schematic view of hatching a-a.
Fig. 3 is that the cut-away section of the second plate lowering or hoisting gear untreated plate drop of undertaking of Fig. 2 is illustrated
Figure.
Fig. 4 is that the first plate lowering or hoisting gear of Fig. 3 accepts processed plate rising and the lifting of the second plate
Device accepts the partial cutaway schematic view that untreated plate rises.
The cut-away section that Fig. 5 stretches into the chamber body of Fig. 4 for robotic arm via the first gateway is illustrated
Figure.
Fig. 6 be Fig. 5 second plate lowering or hoisting gear drive thimble retract so that robotic arm accept at
The partial cutaway schematic view of reason plate.
Fig. 7 is that the first plate lowering or hoisting gear of Fig. 6 accepts processed plate drop so that processed plate
It is positioned over the partial cutaway schematic view on robotic arm.
The chamber body of Fig. 7 sent into by untreated plate by Fig. 8 for robotic arm via the second gateway
Partial cutaway schematic view.
Fig. 9 is that the second plate lowering or hoisting gear of Fig. 8 drives thimble to stretch out so that untreated plate is lifted off machine
The partial cutaway schematic view of device arm.
[symbol description]
10 pick and place chamber 12 chamber body
14 first plate lowering or hoisting gear 15 holding arm
16 second plate lowering or hoisting gear 17 thimble
18 heater 19 heats fluorescent tube
20 first gateway 22 second gateway
24 Pneumatic controllers 26,34 untreated plates
28 process plate 30,32 robotic arms
Specific embodiment
Refer to Fig. 1 and Fig. 2, Fig. 1 is picked and placeed chamber by propose according to one embodiment of the invention
10 schematic perspective view, Fig. 2 be Fig. 1 pick and place chamber 10 along the partial cutaway schematic view of hatching a-a,
As shown in Figure 1 and Figure 2, pick and place chamber 10 comprise chamber body 12, the first plate lowering or hoisting gear 14,
Second plate lowering or hoisting gear 16, and heater 18.Chamber body 12 have the first gateway 20 with
And second gateway 22, the first gateway 20 is used for being communicated in semiconductor processing system and (is not depicted in figure
In formula, such as piece leaf formula process system, online process system, online piece of leaf (linear cluster)
Process system etc.), thus, in chamber body 12, complete the untreated plate of heat treated (such as
Glass substrate, semi-conductor silicon chip, silicon chip are combined with pallet, or have multiple silicon chips and be arranged on
Pallet etc., but be not limited) can enter in semiconductor processing system via the first gateway 20
To carry out Subsequent semiconductor processing procedure, for example chemical vapor deposition (chemical vapor deposition,
Cvd) processing procedure, etch process etc..
First plate lowering or hoisting gear 14 is arranged in chamber body 12 with completing quasiconductor system
The plate that journey is processed, when semiconductor processing system enters chamber body 12 via the first gateway 20, enters
The descending operation of the above-mentioned plate of row, in more detail, in this embodiment, the first plate lowering or hoisting gear
14 can have the multiple holding arms 15 being distributed in distance with for accepting above-mentioned plate, with so that above-mentioned
Plate can lift with multiple moving up and down of holding arm 15.
Second plate lowering or hoisting gear 16 is arranged in chamber body 12 and is located at the first plate lowering or hoisting gear
14 times and relative with the first plate lowering or hoisting gear 14, in order to be used in not yet through manufacture of semiconductor process
Plate via the second gateway 22 enter chamber body 12 when, carry out the descending operation of above-mentioned plate,
In more detail, in this embodiment, the second plate lowering or hoisting gear 16 can have be distributed in distance many
Individual thimble 17, to be used for supporting to arrive in above-mentioned plate, is used so that above-mentioned plate can be with the flexible of thimble 17
Lifting.
As for the design aspect in heater 18, such as Fig. 2 shows, heater 18 is arranged at chamber master
To be used for carrying out plate heating operation in body 12, as shown in Figure 2, in this embodiment, heater
18 can have multiple heating fluorescent tubes 19, to be used for the plate not yet processing through manufacture of semiconductor heating
Process temperatures needed for manufacture of semiconductor, each of which heating fluorescent tube 19 can be preferably infrared lamp
Pipe (as quartz-iodine lamp etc.), thus, heater 18 can enter andante with fluorescent tube radiant heating pattern
Part heating operation and reach the purpose being rapidly heated.
In addition, pick and place chamber 10 and can additionally comprise Pneumatic controller 24, Pneumatic controller 24 is even
Lead in chamber body 12 with for pressure liftable operation is carried out to chamber body 12.In actual applications,
In order to further avoid the inner structural members (as direct reflection sheet etc.) of chamber body 12 in chamber
Main body 12 carries out occurring during back pressure chemical reaction with back pressure gas and the situation of oxidation corrosion is sent out
Raw, if above-mentioned process temperatures are more than particular value (as 200 DEG C), Pneumatic controller 24 can be adopted
Carry out the back pressure operation of chamber body 12 in order to nitrogen filling method, if conversely, above-mentioned process temperatures
During less than above-mentioned particular value, Pneumatic controller 24 is then can to adopt to carry out with dry air filling method
The back pressure operation of chamber body 12.
It is described in detail for the plate loading or unloading operation picking and placeing chamber 10 in this, refer to Fig. 2 extremely
Fig. 9, Fig. 3 are that the cut-away section that untreated plate 26 declines accepted by the second plate lowering or hoisting gear 16 of Fig. 2
Schematic diagram, the first plate lowering or hoisting gear 14 for Fig. 3 for the Fig. 4 is accepted processed plate 28 and is risen and the second plate
The partial cutaway schematic view that untreated plate 26 rises accepted by part lowering or hoisting gear 16, and Fig. 5 is robotic arm
The partial cutaway schematic view of 30 chamber body 12 stretching into Fig. 4 via the first gateway 20, Fig. 6 is Fig. 5
The second plate lowering or hoisting gear 16 drive thimble 17 retract so that robotic arm 30 accepts untreated plate
26 partial cutaway schematic view, Fig. 7 is that processed plate 28 accepted by the first plate lowering or hoisting gear 14 of Fig. 6
Decline so that processed plate 28 is positioned over the partial cutaway schematic view on robotic arm 32, Fig. 8 is machine
The part of the chamber body 12 of Fig. 7 sent into by untreated plate 34 by device arm 32 via the second gateway 22
Generalized section, Fig. 9 is that the second plate lowering or hoisting gear 16 of Fig. 8 drives thimble 17 to stretch out with will be untreated
Plate 34 is lifted off the partial cutaway schematic view of robotic arm 32, wherein robotic arm 30 and robotic arm 32
It is that it is shown with dotted line in Fig. 3 and Fig. 5 to Fig. 9, its related actuating travel design is common in existing
In technology, repeat no more in this.
Through above-mentioned configuration, the thimble 17 of the second plate lowering or hoisting gear 16 support to arrive in untreated plate 26 in
Lifting position as shown in Figure 2 and heater 18 open multiple heating fluorescent tubes 19 with by untreated plate
26 be heated to process temperatures after (now, the inside of chamber body 12 is via the fall of Pneumatic controller 24
Press operation and be in vacuum state), the second plate lowering or hoisting gear 16 thimble 17 can be driven to retract so that
Heated the untreated plate 26 completing and dropped to down position as shown in Figure 3, thus allow for
Carry out plate put into operation robotic arm 30 can via the first gateway 20 stretch into chamber body 12 with
The processed plate 28 having been completed manufacture of semiconductor process is sent in chamber body 12.Next,
First plate lowering or hoisting gear 14 drives holding arm 15 to decline to accept processed plate 28 and so as to locate
Reason plate 28 rises to after lifting position as shown in Figure 4 with holding arm 15, the second plate lifting dress
Putting 16 can drive thimble 17 to stretch out so that untreated plate 26 rises to lifting position as shown in Figure 4,
Now, robotic arm 30 can stretch into chamber body 12 (as shown in Figure 5) again, thus allowing second
Plate lowering or hoisting gear 16 can drive thimble 17 to retract and make untreated plate 26 by robotic arm 30 institute
Accept (as shown in Figure 6).Consequently, it is possible to untreated plate 26 can exit with robotic arm 30
The movement of chamber body 12 and via the first gateway 20 enter semiconductor processing system in carry out after
Continuous manufacture of semiconductor (as chemical vapor deposition process, etch process etc.), thus complete to pick and place chamber
Operation put into by 10 plate.
Completing above-mentioned robotic arm 30, untreated plate 26 is sent into the behaviour in semiconductor processing system
After work, holding arm 15 can be driven to decline for the first plate lowering or hoisting gear 14 so that processed plate 28 drops to
(now, the inside of chamber body 12 can be first via Pneumatic controller for down position as shown in Figure 7
24 back pressure operates and is in and ambient pressure identical isopiestic state), thus allowing for entering andante
The robotic arm 32 that part takes out operation can stretch into chamber body 12 via the second gateway 22, and can be the
One plate lowering or hoisting gear 14 drives holding arm 15 to accept processed plate 28 when rising.Consequently, it is possible to
Processed plate 28 can with robotic arm 32 exit chamber body 12 movement and can be via second
Chamber body 12 is left in gateway 22, thus the plate completing to pick and place chamber 10 takes out operation.
After completing above-mentioned plate taking-up operation, robotic arm 32 can stretch into chamber body 12 again to incite somebody to action
Chamber body 12 (as shown in Figure 8) sent into by another untreated plate 34, now, the second plate lifting
Device 16 can drive thimble 17 to stretch out to support to arrive in untreated plate 34 in lifting position as shown in Figure 9,
So that heater 18 open heat lamps pipe 19 heating, take with plate as for subsequent heat operation
Put the associated description of operation, it can be analogized according to foregoing description, repeats no more in this.
It is noted that in this embodiment, the lifting travel of the first plate lowering or hoisting gear 14 can be relatively
Goodly overlapping with the lifting travel of the second plate lowering or hoisting gear 16 (the stroke portion for example shown in Fig. 2 to Fig. 9
Divide Overlap design), in order to effectively to reduce the overall cavity space picking and placeing chamber 10, thus reduction half
Conductor process system on chamber configures the space of required occupancy and the construction cost of required consuming and
Reduce the burden of Pneumatic controller 24 and make its blood pressure lowering and back pressure improved efficiency.
Compared to prior art, the present invention is same using being arranged on the plate being oppositely arranged lowering or hoisting gear
So that the design that can accordingly lift of the plate that it is accepted in chamber body, it is not required to respectively with reaching
Configuration be taken into chamber and take out chamber with carry out plate pick and place piece operation and only need once to be dropped
Pressure can complete the purpose of plate loading or unloading operation with back pressure operation.Consequently, it is possible to the present invention is not only effective
Ground reduction the semiconductor processing system space of required occupancy and construction of required consuming in chamber configuration
Cost, the plate that simultaneously also can simplify semiconductor processing system picks and places flow process, thus significantly lifting half
The plate of conductor process system picks and places efficiency.
The foregoing is only presently preferred embodiments of the present invention, all done according to scope of the present invention patent
Impartial change and modification, all should belong to the covering scope of the present invention.
Claims (10)
1. one kind picks and places chamber it is characterised in that comprising:
One chamber body, it has one first gateway and one second gateway, this first gateway
It is used for being communicated in semiconductor process system；
One first plate lowering or hoisting gear, it is arranged in this chamber body, in a processed plate
When this semiconductor processing system enters this chamber body via this first gateway, accept this processed
Plate lifts between one first lifting position and one first down position；
One second plate lowering or hoisting gear, it is arranged in this chamber body and is located at the lifting of this first plate
Relative with this first plate lowering or hoisting gear under device, for second going out via this in a untreated plate
When entrance enters this chamber body, accept this untreated plate in one second lifting position and one
Lift between two down positions；And
One heater, it is arranged in this chamber body, for holding in this second plate lowering or hoisting gear
When connecing this untreated plate and rising to this second lifting position, heat this untreated plate to a processing procedure temperature
Degree；
Wherein when this second plate lowering or hoisting gear accepts this untreated plate drop to this second time decrease
When putting, this first plate lowering or hoisting gear is accepted this processed plate and is dropped to this from this first lifting position
First down position, so that this processed plate can leave this chamber body via this second gateway；
When this first plate lowering or hoisting gear is accepted this processed plate and risen to this first lifting position, this
Two plate lowering or hoisting gears are accepted and have been heated this untreated plate completing from the rising of this second down position
To this second lifting position, so that this untreated plate can enter this quasiconductor via this first gateway
Process system.
2. pick and place chamber as claimed in claim 1 it is characterised in that this first plate lowering or hoisting gear
There are multiple holding arms, the plurality of holding arm is distributed in distance with for accepting this processed plate, with
By this processed plate movement to this first lifting position or this first down position.
3. pick and place chamber as claimed in claim 1 it is characterised in that this second plate lowering or hoisting gear
There are multiple thimbles, the plurality of thimble is distributed in distance with for supporting to arrive in this untreated plate, should
Untreated plate movement is to this second lifting position or this second down position.
4. pick and place chamber as claimed in claim 1 it is characterised in that this first plate lowering or hoisting gear
A lifting travel least partially overlapped with a lifting travel of this second plate lowering or hoisting gear.
5. pick and place chamber as claimed in claim 1 it is characterised in that this heater have multiple
Heating fluorescent tube is with for heating this untreated plate.
6. pick and place chamber as claimed in claim 5 it is characterised in that each heating fluorescent tube is red for one
Outside line fluorescent tube.
7. pick and place chamber as claimed in claim 5 it is characterised in that also comprising:
One Pneumatic controller, it is communicated in this chamber body, for carrying out a gas to this chamber body
Pressure descending operation.
8. pick and place chamber as claimed in claim 7 it is characterised in that working as this process temperatures to be more than one
During particular value, this Pneumatic controller carries out a back pressure behaviour with nitrogen filling method to this chamber body
Make.
9. pick and place chamber as claimed in claim 7 it is characterised in that working as this process temperatures to be less than one
During particular value, Pneumatic controller carries out a back pressure behaviour with dry air filling method to this chamber body
Make.
10. pick and place chamber as claimed in claim 1 it is characterised in that this processed plate and
This untreated plate is glass substrate, semi-conductor silicon chip, silicon chip are combined with pallet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510414154.XA CN106356317A (en) | 2015-07-15 | 2015-07-15 | Picking and placing cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510414154.XA CN106356317A (en) | 2015-07-15 | 2015-07-15 | Picking and placing cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106356317A true CN106356317A (en) | 2017-01-25 |
Family
ID=57842739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510414154.XA Pending CN106356317A (en) | 2015-07-15 | 2015-07-15 | Picking and placing cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106356317A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1639855A (en) * | 2002-02-25 | 2005-07-13 | 东京毅力科创株式会社 | Substrate support mechanism in semiconductor processing system |
| US20060021575A1 (en) * | 2002-09-25 | 2006-02-02 | Tokyo Electron Limited | Method for carrying object to be processed |
| CN101330032A (en) * | 2008-07-22 | 2008-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus and transition chamber thereof |
-
2015
- 2015-07-15 CN CN201510414154.XA patent/CN106356317A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1639855A (en) * | 2002-02-25 | 2005-07-13 | 东京毅力科创株式会社 | Substrate support mechanism in semiconductor processing system |
| US20060021575A1 (en) * | 2002-09-25 | 2006-02-02 | Tokyo Electron Limited | Method for carrying object to be processed |
| CN101330032A (en) * | 2008-07-22 | 2008-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus and transition chamber thereof |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
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Application publication date: 20170125 |