CN106345543B - A kind of microring array chip of the charge inducing electric osmose based on fixed potential - Google Patents
A kind of microring array chip of the charge inducing electric osmose based on fixed potential Download PDFInfo
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Abstract
Description
技术领域technical field
本发明涉及微混合芯片领域,具体涉及一种基于固定电势的感应电荷电渗的微混合芯片。The invention relates to the field of micro-mixing chips, in particular to a micro-mixing chip based on fixed potential induction charge electroosmosis.
背景技术Background technique
微流控芯片(Micro fluidic Chip)又称芯片实验室(Lab-on-A-Chip),指的是把生物和化学等领域中所涉及的样品制备、反应、分离和检测等基本操作单元集成或基本集成到一块几平方厘米(甚至更小)的芯片上,由微通道形成网络,自动完成分析过程,已经发展成为一个机械、化学、生物、医学和流体力学等多学科交叉的十分具有应用前景的研究领域。Microfluidic Chip (Micro fluidic Chip), also known as Lab-on-A-Chip, refers to the integration of basic operating units such as sample preparation, reaction, separation and detection involved in the fields of biology and chemistry. Or basically integrated on a chip of a few square centimeters (or even smaller), the network is formed by microchannels, and the analysis process is automatically completed. promising research areas.
在微流控芯片技术领域中,如何对微流体进行精准的操控一直以来都是学者们研究的热门课题。传统的宏观流体可以通过对流实现混合,而微通道中的流体由于低雷诺数,主要依靠扩散来实现混合。因此,在微系统中,为了实现微通道中流体的有效混合,外部能量或者部件是不可缺少的。In the field of microfluidic chip technology, how to precisely control microfluidics has always been a hot topic for scholars to study. Traditional macroscopic fluids can be mixed by convection, while fluids in microchannels mainly rely on diffusion to achieve mixing due to their low Reynolds numbers. Therefore, in microsystems, external energy or components are indispensable in order to achieve efficient mixing of fluids in microchannels.
现有的微混合芯片分为主动式微混合芯片和被动式微混合芯片。被动式微混合芯片主要依靠复杂的内部结构设计或者通道表面处理实现微通道中流体的混合。主动式微混合芯片主要依靠声场、磁场或电场等外部能量来实现微通道中流体的混合。这其中应用较多的是依靠电场的微混合芯片。电驱动微混合芯片具有结构简单、无需外部构件和易于集合等优点。Existing micro-hybrid chips are divided into active micro-hybrid chips and passive micro-hybrid chips. Passive micro-mixing chips mainly rely on complex internal structure design or channel surface treatment to achieve fluid mixing in micro-channels. Active micro-mixing chips mainly rely on external energy such as acoustic field, magnetic field or electric field to realize the mixing of fluids in microchannels. Among them, micro-hybrid chips relying on electric fields are more widely used. The electrically driven micro-hybrid chip has the advantages of simple structure, no need for external components, and easy assembly.
现有的电驱动微混合芯片主要是基于感应电荷电渗原理,通过在微通道内设置多个三维复杂的导体障碍物,产生感应电荷电渗现象,进而促进微通道中流体的混合。该类微混合芯片虽然具有优良的混合能力,但是由于需要在微通道内设置三维复杂的导体障碍物,使得该类混合芯片的加工步骤繁琐,难于操作。Existing electrically driven micro-hybrid chips are mainly based on the principle of induced charge electroosmosis, by setting multiple three-dimensional complex conductor obstacles in the microchannel to generate induced charge electroosmosis, thereby promoting the mixing of fluids in the microchannel. Although this type of micro-hybrid chip has excellent mixing capability, the processing steps of this type of hybrid chip are cumbersome and difficult to operate due to the need to arrange three-dimensional and complex conductor obstacles in the microchannel.
发明内容Contents of the invention
本发明为解决现有基于感应电荷电渗的微混合芯片加工步骤繁琐、难于操作的问题,提出了一种基于固定电势的感应电荷电渗的微混合芯片。In order to solve the problems of cumbersome processing steps and difficult operation of the existing micro-mix chip based on induced charge electroosmosis, the invention proposes a micro-mix chip based on fixed potential induced charge electroosmosis.
本发明所述的一种基于固定电势的感应电荷电渗的微混合芯片包括玻璃基底1、PDMS盖片2、第一激发电极3、第二激发电极4、第三激发电极5、第四激发电极6、第一悬浮电极7和第二悬浮电极8;A micro-hybrid chip based on fixed potential induced charge electroosmosis according to the present invention includes a glass substrate 1, a PDMS cover sheet 2, a first excitation electrode 3, a second excitation electrode 4, a third excitation electrode 5, a fourth excitation electrode Electrode 6, first suspension electrode 7 and second suspension electrode 8;
所述第一激发电极3、第二激发电极4、第三激发电极5、第四激发电极6、第一悬浮电极7和第二悬浮电极8均为薄膜电极,并均设置在玻璃基底1的上表面;The first excitation electrode 3, the second excitation electrode 4, the third excitation electrode 5, the fourth excitation electrode 6, the first suspension electrode 7 and the second suspension electrode 8 are thin film electrodes, and are all arranged on the glass substrate 1. upper surface;
所述PDMS盖片2的下表面上设置有第一流道9、第二流道10、第三流道11和混合流道12,所述混合流道12的流入端同时与第一流道9的流出端和第二流道10的流出端连接,所述混合流道12的流出端与第三流道11的流入端连接,所述第一流道9的流入端设置有第一流入槽13,所述第二流道10的流入端设置有第二流入槽14,所述第三流道11的流出端设置有流出通孔15;The lower surface of the PDMS cover sheet 2 is provided with a first flow channel 9, a second flow channel 10, a third flow channel 11 and a mixing flow channel 12, and the inflow end of the mixing flow channel 12 is connected with the first flow channel 9 at the same time. The outflow end is connected to the outflow end of the second flow channel 10, the outflow end of the mixing flow channel 12 is connected to the inflow end of the third flow channel 11, and the inflow end of the first flow channel 9 is provided with a first inflow groove 13, The inflow end of the second flow channel 10 is provided with a second inflow groove 14, and the outflow end of the third flow channel 11 is provided with an outflow through hole 15;
所述第一流入槽13的底部设置有第一流入通孔,所述第二流入槽14的底部设置有第二流入通孔,所述第一流入通孔、第二流入通孔和流出通孔15均贯穿PDMS盖片2;The bottom of the first inflow groove 13 is provided with a first inflow through hole, the bottom of the second inflow groove 14 is provided with a second inflow through hole, the first inflow through hole, the second inflow through hole and the outflow through hole The holes 15 all run through the PDMS cover slip 2;
所述第一流入通孔的流入端和第二流入通孔的流入端分别接有第一金属连接器16和第二金属连接器17;The inflow end of the first inflow hole and the inflow end of the second inflow hole are respectively connected with a first metal connector 16 and a second metal connector 17;
所述玻璃基底1的上表面与PDMS盖片2的下表面相对且密封设置,所述第一激发电极3的一端18和第二激发电极4的一端19均与混合流道12的一侧贴合,所述第三激发电极5的一端20和第四激发电极6的一端21均与混合流道12的另一侧贴合;The upper surface of the glass substrate 1 is opposite to the lower surface of the PDMS cover sheet 2 and sealed, and one end 18 of the first excitation electrode 3 and one end 19 of the second excitation electrode 4 are all attached to one side of the mixing channel 12. close, one end 20 of the third excitation electrode 5 and one end 21 of the fourth excitation electrode 6 are attached to the other side of the mixing channel 12;
所述第一激发电极3的一端18与第四激发电极6的一端21相对设置,在两者之间设置第一悬浮电极7的一端22,所述第一悬浮电极7的一端22与两者的间距相等;One end 18 of the first excitation electrode 3 is arranged opposite to one end 21 of the fourth excitation electrode 6, and one end 22 of the first suspension electrode 7 is arranged between the two, and one end 22 of the first suspension electrode 7 is connected to both are equally spaced;
所述第二激发电极4的一端19与第三激发电极5的一端20相对设置,在两者之间设置第二悬浮电极8的一端23,所述第二悬浮电极8的一端23与两者的间距相等;One end 19 of the second excitation electrode 4 is arranged opposite to one end 20 of the third excitation electrode 5, and one end 23 of the second suspension electrode 8 is arranged between the two, and one end 23 of the second suspension electrode 8 is connected to both are equally spaced;
所述第一激发电极3的一端18与第四激发电极6的一端21的电势差等于所述第二激发电极4的一端19与第三激发电极5的一端20的电势差。The potential difference between one end 18 of the first excitation electrode 3 and one end 21 of the fourth excitation electrode 6 is equal to the potential difference between one end 19 of the second excitation electrode 4 and one end 20 of the third excitation electrode 5 .
优选的是,所述第一悬浮电极7的一端22与第二悬浮电极8的一端23的尺寸相同;Preferably, the size of one end 22 of the first suspension electrode 7 is the same as that of the end 23 of the second suspension electrode 8;
所述第一悬浮电极7的一端22的长度Lc为1000微米,宽度Wc为80微米,所述第一悬浮电极7的一端22与第二悬浮电极8的一端23的间距Gc为100微米;The length Lc of one end 22 of the first suspension electrode 7 is 1000 microns, the width Wc is 80 microns, and the distance Gc between the end 22 of the first suspension electrode 7 and the end 23 of the second suspension electrode 8 is 100 microns;
所述混合流道12的长度L为2300微米,宽度W为180微米,高度为100微米;The length L of the mixing channel 12 is 2300 microns, the width W is 180 microns, and the height is 100 microns;
所述第一激发电极3的一端18与第四激发电极6的一端21的间距和所述第二激发电极4的一端19与第三激发电极5的一端20的间距相同;The distance between one end 18 of the first excitation electrode 3 and one end 21 of the fourth excitation electrode 6 is the same as the distance between one end 19 of the second excitation electrode 4 and one end 20 of the third excitation electrode 5;
所述第一悬浮电极7的一端22与第三激发电极5的一端20的间距Gl为30微米;The distance G1 between one end 22 of the first suspension electrode 7 and one end 20 of the third excitation electrode 5 is 30 microns;
所述第一激发电极3的一端18与第二激发电极4的一端19的间距Gd等于第三激发电极5的一端20与第四激发电极6的一端21的间距,所述间距Gd为140微米。The distance Gd between one end 18 of the first excitation electrode 3 and one end 19 of the second excitation electrode 4 is equal to the distance between one end 20 of the third excitation electrode 5 and one end 21 of the fourth excitation electrode 6, and the distance Gd is 140 microns .
进一步的是,所述第一金属连接器16和第二金属连接器17的内径均为1毫米,所述流出通孔15的直径为6毫米。Further, the inner diameters of the first metal connector 16 and the second metal connector 17 are both 1 mm, and the diameter of the outflow through hole 15 is 6 mm.
优选的是,所述薄膜电极的材质为ITO。Preferably, the material of the thin film electrode is ITO.
优选的是,所述薄膜电极的材质为金属。Preferably, the film electrode is made of metal.
所述第一激发电极3的一端18和第二激发电极4的一端19的电势均为V1。所述第三激发电极5的一端20和第四激发电极6的一端21的电势均为V2。当第一悬浮电极7的一端22和第二悬浮电极8的一端23不加电压时,两者的电势均为(V1+V2)/2。在对混合流道12内的流体进行混合时,分别对第一悬浮电极7的一端22和第二悬浮电极8的一端23施加电压,使第一悬浮电极7的一端22的电势大于(V1+V2)/2,第二悬浮电极8的一端23的电势小于(V1+V2)/2;或者使第一悬浮电极7的一端22的电势小于(V1+V2)/2,第二悬浮电极8的一端23的电势大于(V1+V2)/2。The potentials of one end 18 of the first excitation electrode 3 and one end 19 of the second excitation electrode 4 are both V 1 . The potentials of one end 20 of the third excitation electrode 5 and one end 21 of the fourth excitation electrode 6 are both V 2 . When no voltage is applied to one end 22 of the first floating electrode 7 and one end 23 of the second floating electrode 8 , the potentials of both are (V 1 +V 2 )/2. When the fluid in the mixing channel 12 is mixed, a voltage is applied to one end 22 of the first suspension electrode 7 and one end 23 of the second suspension electrode 8 respectively, so that the potential of one end 22 of the first suspension electrode 7 is greater than (V 1 +V 2 )/2, the potential of one end 23 of the second floating electrode 8 is less than (V 1 +V 2 )/2; or the potential of one end 22 of the first floating electrode 7 is less than (V 1 +V 2 )/2 , the potential of one end 23 of the second floating electrode 8 is greater than (V 1 +V 2 )/2.
本发明所述的一种基于固定电势的感应电荷电渗的微混合芯片,通过改变两个悬浮电极表面的电势,影响了悬浮电极与流体交界处双电层的电容充电,使得悬浮电极表面的电渗流发生改变,进而产生两个非对称的电渗漩涡,对微通道中的流体进行搅拌,实现流体的混合。本发明中的电极均为薄膜电极,与三维复杂的导体障碍物相比,薄膜电极更容易制备。因此本发明所述的微混合芯片,加工步骤简便,易于操作,能够解决现有基于感应电荷电渗的微混合芯片加工步骤繁琐、难于操作的问题。A micro-hybrid chip based on the induction charge electroosmosis of fixed potential according to the present invention affects the capacitive charging of the electric double layer at the junction of the suspension electrode and the fluid by changing the potential of the surface of the two suspension electrodes, so that the surface of the suspension electrode The electroosmotic flow is changed, and then two asymmetric electroosmotic vortices are generated, which stir the fluid in the microchannel to realize fluid mixing. The electrodes in the present invention are all thin-film electrodes, and compared with three-dimensional complex conductor obstacles, the thin-film electrodes are easier to prepare. Therefore, the micro-hybrid chip of the present invention has simple processing steps and is easy to operate, and can solve the problems of cumbersome processing steps and difficult operation of the existing micro-hybrid chip based on induced charge electroosmosis.
附图说明Description of drawings
在下文中将基于实施例并参考附图来对本发明所述的一种基于固定电势的感应电荷电渗的微混合芯片进行更详细的描述,其中:In the following, a micro-hybrid chip based on fixed potential induced charge electroosmosis according to the present invention will be described in more detail based on the embodiments and with reference to the accompanying drawings, wherein:
图1是实施例所述的一种基于固定电势的感应电荷电渗的微混合芯片的透视图;Fig. 1 is the perspective view of a kind of micro-mixing chip based on the induction charge electroosmosis of fixed electric potential described in the embodiment;
图2是实施例中混合流道处的放大图;Figure 2 is an enlarged view of the mixing channel in the embodiment;
图3是实施例中混合流道与电极端部的尺寸图;Fig. 3 is the dimensional drawing of mixing channel and electrode end in the embodiment;
图4是实施例中第一激发电极和第二激发电极上施加10Vpp电压,第三激发电极和第四激发电极接地,第一悬浮电极施加8Vpp电压,第二悬浮电极施加2Vpp电压,电压频率均为500Hz时,混合流道中,B溶液与C溶液的混合流场图;Fig. 4 is that 10Vpp voltage is applied on the first excitation electrode and the second excitation electrode in the embodiment, the third excitation electrode and the fourth excitation electrode are grounded, the first suspension electrode is applied with 8Vpp voltage, and the second suspension electrode is applied with 2Vpp voltage. When the frequency is 500Hz, the mixed flow field diagram of solution B and solution C in the mixed channel;
图5是实施例中PDMS通道加工的流程图,a为硅基底,b为光刻胶,c为流道模板,d为PDMS与固化剂的混合物,UV为紫外线;Fig. 5 is a flowchart of PDMS channel processing in the embodiment, a is a silicon substrate, b is a photoresist, c is a flow channel template, d is a mixture of PDMS and a curing agent, and UV is ultraviolet light;
图6是实施例中ITO薄膜电极加工的流程图,e为ITO薄膜,f为电极模板;Fig. 6 is the flowchart of ITO thin film electrode processing in the embodiment, e is ITO thin film, f is electrode template;
图7是实施例中PDMS盖片与ITO基底的键合图。Fig. 7 is a bonding diagram of the PDMS cover sheet and the ITO substrate in the embodiment.
在附图中,相同的部件使用相同的附图标记。附图并未按照实际的比例。In the figures, the same parts are given the same reference numerals. The drawings are not to scale.
具体实施方式Detailed ways
下面将结合附图对本发明所述的一种基于固定电势的感应电荷电渗的微混合芯片作进一步说明。A micro-hybrid chip based on fixed potential induced charge electroosmosis according to the present invention will be further described below with reference to the accompanying drawings.
实施例:下面结合图1至图7详细地说明本实施例。Embodiment: The present embodiment will be described in detail below in conjunction with FIG. 1 to FIG. 7 .
本实施例所述的一种基于固定电势的感应电荷电渗的微混合芯片,包括玻璃基底1、PDMS盖片2、第一激发电极3、第二激发电极4、第三激发电极5、第四激发电极6、第一悬浮电极7和第二悬浮电极8;A micro-hybrid chip based on fixed potential induced charge electroosmosis described in this embodiment includes a glass substrate 1, a PDMS cover sheet 2, a first excitation electrode 3, a second excitation electrode 4, a third excitation electrode 5, a Four excitation electrodes 6, a first suspension electrode 7 and a second suspension electrode 8;
所述第一激发电极3、第二激发电极4、第三激发电极5、第四激发电极6、第一悬浮电极7和第二悬浮电极8均为薄膜电极,并均设置在玻璃基底1的上表面;The first excitation electrode 3, the second excitation electrode 4, the third excitation electrode 5, the fourth excitation electrode 6, the first suspension electrode 7 and the second suspension electrode 8 are thin film electrodes, and are all arranged on the glass substrate 1. upper surface;
所述PDMS盖片2的下表面上设置有第一流道9、第二流道10、第三流道11和混合流道12,所述混合流道12的流入端同时与第一流道9的流出端和第二流道10的流出端连接,所述混合流道12的流出端与第三流道11的流入端连接,所述第一流道9的流入端设置有第一流入槽13,所述第二流道10的流入端设置有第二流入槽14,所述第三流道11的流出端设置有流出通孔15;The lower surface of the PDMS cover sheet 2 is provided with a first flow channel 9, a second flow channel 10, a third flow channel 11 and a mixing flow channel 12, and the inflow end of the mixing flow channel 12 is connected with the first flow channel 9 at the same time. The outflow end is connected to the outflow end of the second flow channel 10, the outflow end of the mixing flow channel 12 is connected to the inflow end of the third flow channel 11, and the inflow end of the first flow channel 9 is provided with a first inflow groove 13, The inflow end of the second flow channel 10 is provided with a second inflow groove 14, and the outflow end of the third flow channel 11 is provided with an outflow through hole 15;
所述第一流入槽13的底部设置有第一流入通孔,所述第二流入槽14的底部设置有第二流入通孔,所述第一流入通孔、第二流入通孔和流出通孔15均贯穿PDMS盖片2;The bottom of the first inflow groove 13 is provided with a first inflow through hole, the bottom of the second inflow groove 14 is provided with a second inflow through hole, the first inflow through hole, the second inflow through hole and the outflow through hole The holes 15 all run through the PDMS cover slip 2;
所述第一流入通孔的流入端和第二流入通孔的流入端分别接有第一金属连接器16和第二金属连接器17;The inflow end of the first inflow hole and the inflow end of the second inflow hole are respectively connected with a first metal connector 16 and a second metal connector 17;
所述玻璃基底1的上表面与PDMS盖片2的下表面相对且密封设置,所述第一激发电极3的一端18和第二激发电极4的一端19均与混合流道12的一侧贴合,所述第三激发电极5的一端20和第四激发电极6的一端21均与混合流道12的另一侧贴合;The upper surface of the glass substrate 1 is opposite to the lower surface of the PDMS cover sheet 2 and sealed, and one end 18 of the first excitation electrode 3 and one end 19 of the second excitation electrode 4 are all attached to one side of the mixing channel 12. close, one end 20 of the third excitation electrode 5 and one end 21 of the fourth excitation electrode 6 are attached to the other side of the mixing channel 12;
所述第一激发电极3的一端18与第四激发电极6的一端21相对设置,在两者之间设置第一悬浮电极7的一端22,所述第一悬浮电极7的一端22与两者的间距相等;One end 18 of the first excitation electrode 3 is arranged opposite to one end 21 of the fourth excitation electrode 6, and one end 22 of the first suspension electrode 7 is arranged between the two, and one end 22 of the first suspension electrode 7 is connected to both are equally spaced;
所述第二激发电极4的一端19与第三激发电极5的一端20相对设置,在两者之间设置第二悬浮电极8的一端23,所述第二悬浮电极8的一端23与两者的间距相等;One end 19 of the second excitation electrode 4 is arranged opposite to one end 20 of the third excitation electrode 5, and one end 23 of the second suspension electrode 8 is arranged between the two, and one end 23 of the second suspension electrode 8 is connected to both are equally spaced;
所述第一激发电极3的一端18与第四激发电极6的一端21的电势差等于所述第二激发电极4的一端19与第三激发电极5的一端20的电势差;The potential difference between one end 18 of the first excitation electrode 3 and one end 21 of the fourth excitation electrode 6 is equal to the potential difference between one end 19 of the second excitation electrode 4 and one end 20 of the third excitation electrode 5;
所述第一悬浮电极7的一端22与第二悬浮电极8的一端23的尺寸相同;One end 22 of the first floating electrode 7 has the same size as the one end 23 of the second floating electrode 8;
所述第一悬浮电极7的一端22的长度Lc为1000微米,宽度Wc为80微米,所述第一悬浮电极7的一端22与第二悬浮电极8的一端23的间距Gc为100微米;The length Lc of one end 22 of the first suspension electrode 7 is 1000 microns, the width Wc is 80 microns, and the distance Gc between the end 22 of the first suspension electrode 7 and the end 23 of the second suspension electrode 8 is 100 microns;
所述混合流道12的长度L为2300微米,宽度W为180微米,高度为100微米;The length L of the mixing channel 12 is 2300 microns, the width W is 180 microns, and the height is 100 microns;
所述第一激发电极3的一端18与第四激发电极6的一端21的间距和所述第二激发电极4的一端19与第三激发电极5的一端20的间距相同;The distance between one end 18 of the first excitation electrode 3 and one end 21 of the fourth excitation electrode 6 is the same as the distance between one end 19 of the second excitation electrode 4 and one end 20 of the third excitation electrode 5;
所述第一悬浮电极7的一端22与第三激发电极5的一端20的间距Gl为30微米;The distance G1 between one end 22 of the first suspension electrode 7 and one end 20 of the third excitation electrode 5 is 30 microns;
所述第一激发电极3的一端18与第二激发电极4的一端19的间距Gd等于第三激发电极5的一端20与第四激发电极6的一端21的间距,所述间距Gd为140微米。The distance Gd between one end 18 of the first excitation electrode 3 and one end 19 of the second excitation electrode 4 is equal to the distance between one end 20 of the third excitation electrode 5 and one end 21 of the fourth excitation electrode 6, and the distance Gd is 140 microns .
所述第一金属连接器16和第二金属连接器17的内径均为1毫米,所述流出通孔15的直径为6毫米;The inner diameters of the first metal connector 16 and the second metal connector 17 are both 1 mm, and the diameter of the outflow through hole 15 is 6 mm;
所述薄膜电极的材质为ITO。The material of the thin film electrode is ITO.
基于海姆霍兹-斯姆鲁乔斯基公式可以得到悬浮电极上电渗滑移的时均流速:Based on the Helmholtz-Smruchowski formula, the time-average velocity of the electroosmotic slip on the suspended electrode can be obtained:
其中,<vs>为电渗滑移的时均流速,ε为溶液介电常数,η为溶液粘度,为诱导的电动电势,为金属表面电势,为双电层外侧电势,为电场强度复振幅,为电场切向分量复振幅,δ为扩散层与吸附层电容之比,n为法向量。Among them, <v s > is the time-average flow rate of electroosmotic slip, ε is the dielectric constant of the solution, η is the solution viscosity, is the induced zeta potential, is the metal surface potential, is the electric potential outside the double layer, is the complex amplitude of the electric field intensity, is the complex amplitude of the tangential component of the electric field, δ is the ratio of the capacitance of the diffusion layer to the adsorption layer, and n is the normal vector.
图3为混合流道与电极端部的尺寸图。图中的各项尺寸参数通过基于Comsol仿真优化得到。Fig. 3 is a dimensional drawing of the mixing channel and the electrode end. The size parameters in the figure are obtained through optimization based on Comsol simulation.
本实施例所述的一种基于固定电势的感应电荷电渗的微混合芯片的制备方法按照以下步骤进行:The preparation method of a micro-mixed chip based on fixed potential induced charge electroosmosis described in this embodiment is carried out according to the following steps:
一、PDMS通道加工:1. PDMS channel processing:
(1)、清洗硅基底:首先,采用清洗剂手洗硅基底。其次,将硅基底依次置于丙酮和异丙醇中分别超声清洗10分钟。再次,采用等离子水冲洗硅基底,并采用氮气吹干。最后,将吹干后的硅基底置于烘烤箱中,在80℃的温度下,加热15分钟。(1) Cleaning the silicon substrate: first, the silicon substrate is washed by hand with a cleaning agent. Secondly, the silicon substrate was ultrasonically cleaned in acetone and isopropanol for 10 minutes respectively. Again, the silicon substrate was rinsed with plasma water and dried with nitrogen gas. Finally, the dried silicon substrate was placed in a baking oven, and heated at a temperature of 80° C. for 15 minutes.
(2)、光刻胶的平铺:首先,在硅基底的上表面涂覆一层光刻胶。其次,将硅基底放置在甩胶机上以1500r/s的速度旋转,直至光刻胶的厚度为100微米。最后,对硅基底进行前烘,将硅基底放置在60℃的热板上,将热板加热至95℃,以该温度加热硅基底1小时。所述光刻胶为SU-82050型号的负性光刻胶。(2) Tiling of photoresist: First, a layer of photoresist is coated on the upper surface of the silicon substrate. Secondly, the silicon substrate is placed on a glue spinner and rotated at a speed of 1500r/s until the thickness of the photoresist is 100 microns. Finally, pre-bake the silicon substrate, place the silicon substrate on a hot plate at 60° C., heat the hot plate to 95° C., and heat the silicon substrate at this temperature for 1 hour. The photoresist is a negative photoresist of the SU-82050 model.
(3)、曝光:首先,将流道模板放置在光刻胶面上。其次,采用透光板将流道模板与光刻胶面压紧。最后,采用紫外线灯管对其进行曝光。(3) Exposure: First, place the runner template on the photoresist surface. Secondly, use a light-transmitting plate to press the flow channel template and the photoresist surface tightly. Finally, it is exposed using a UV lamp.
(4)、显影:首先,对曝光后的硅基底进行后烘,将硅基底放置在60℃的热板上,将热板加热至95℃,以该温度加热硅基底35分钟。其次,将冷却后的硅基底放置于SU-8显影液中显影10分钟。再次,对硅基底进行等离子水清洗、氮气吹干。最后,将硅基底置于烘烤箱中,在80℃的温度下,加热10分钟至20分钟,得到PDMS流道模子。(4) Developing: First, after-baking the exposed silicon substrate, place the silicon substrate on a hot plate at 60° C., heat the hot plate to 95° C., and heat the silicon substrate at this temperature for 35 minutes. Secondly, place the cooled silicon substrate in SU-8 developer solution for 10 minutes for development. Again, the silicon substrate was cleaned with plasma water and dried with nitrogen gas. Finally, the silicon substrate is placed in a baking oven and heated at a temperature of 80° C. for 10 minutes to 20 minutes to obtain a PDMS flow channel mold.
(5)、浇筑PDMS:首先,将PDMS与固化剂以10:1的质量比进行混合,并采用洁净的玻璃棒搅拌15分钟至20分钟,使其混合均匀。其次,采用真空泵对PDMS与固化剂的混合物抽真空30分钟,以消除混合物中的气泡。再次,对PDMS流道模子进行硅烷化处理,使PDMS流道模子的表面沉积一层硅烷。最后,在PDMS流道模子的硅烷面上浇筑PDMS与固化剂的混合物,并采用真空泵对其抽真空20分钟,以消除混合物中的气泡,在80℃的温度下,加热2小时,使其固化。(5) Pouring PDMS: First, mix PDMS and curing agent at a mass ratio of 10:1, and stir with a clean glass rod for 15 to 20 minutes to make it evenly mixed. Second, the mixture of PDMS and curing agent was evacuated for 30 minutes using a vacuum pump to eliminate air bubbles in the mixture. Thirdly, carry out silanization treatment to the PDMS flow channel mold, so that a layer of silane is deposited on the surface of the PDMS flow channel mold. Finally, pour the mixture of PDMS and curing agent on the silane surface of the PDMS flow channel mold, and use a vacuum pump to evacuate it for 20 minutes to eliminate air bubbles in the mixture, and heat it at 80°C for 2 hours to cure it. .
PDMS流道模子的表面的硅烷层用于避免PDMS流道模子与所述混合物粘连。The silane layer on the surface of the PDMS runner mold was used to prevent the PDMS runner mold from sticking to the mixture.
(6)、PDMS通道处理:首先,将固化后的PDMS从PDMS流道模子上缓缓揭下。其次,采用刀片将其切割为与玻璃基底相匹配的形状。最后,采用挖槽器和打孔器,设置第一流入槽、第二流入槽、第一流入通孔、第二流入通孔和流出通孔,得到PDMS盖片。(6) PDMS channel treatment: First, slowly peel off the cured PDMS from the PDMS flow channel mold. Second, it is cut with a blade to match the shape of the glass substrate. Finally, the first inflow groove, the second inflow groove, the first inflow through hole, the second inflow through hole and the outflow through hole are set by using a groove digger and a hole puncher to obtain a PDMS cover sheet.
图5是PDMS通道加工的流程图。Figure 5 is a flowchart of PDMS channel processing.
二、ITO薄膜电极的加工:2. Processing of ITO thin film electrodes:
(1)、清洗ITO基底:ITO基底包括玻璃基底和ITO薄膜,ITO基底的清洗方法与硅基底的清洗方法相同。(1) Cleaning the ITO substrate: the ITO substrate includes a glass substrate and an ITO film, and the cleaning method of the ITO substrate is the same as that of the silicon substrate.
(2)、光刻胶的平铺:首先,在ITO薄膜上涂覆一层光刻胶。其次,将ITO基底放置在甩胶机上以3100r/s的速度旋转40秒。最后,对ITO基底进行软烘,将ITO基底放置在100℃的热板上,加热6分钟。(2) Tiling of photoresist: First, coat a layer of photoresist on the ITO film. Secondly, the ITO substrate was placed on a spinner and rotated at a speed of 3100r/s for 40 seconds. Finally, soft-bake the ITO substrate, place the ITO substrate on a hot plate at 100° C., and heat it for 6 minutes.
所述光刻胶为AZ4620型号的光刻胶。The photoresist is AZ4620 photoresist.
(3)、曝光:将ITO基底放置在紫外线灯管下进行曝光。(3) Exposure: place the ITO substrate under an ultraviolet lamp for exposure.
(4)、显影:将曝光后的ITO基底放置于AZ显影液中,显影4分钟至5分钟。(4) Developing: place the exposed ITO substrate in AZ developing solution, and develop for 4 to 5 minutes.
(5)、腐蚀ITO薄膜:将显影后的ITO基底置于质量比为60%的盐酸溶液中,并加入氯化铁作为催化剂,浸泡40分钟,对ITO薄膜进行腐蚀。此过程中,经曝光固化的光刻胶层起到了保护ITO薄膜的作用,没有光刻胶覆盖的ITO薄膜被腐蚀掉。(5) Corrosion of the ITO film: the developed ITO substrate is placed in a hydrochloric acid solution with a mass ratio of 60%, and ferric chloride is added as a catalyst, soaked for 40 minutes, and the ITO film is corroded. During this process, the exposed and cured photoresist layer plays a role in protecting the ITO film, and the ITO film not covered by the photoresist is etched away.
(6)、去除光刻胶:完成ITO薄膜的腐蚀后,将ITO基底置于质量比为5%的NaOH溶液中浸泡,去除固化的光刻胶,得到ITO薄膜电极。(6) Removing the photoresist: After the etching of the ITO thin film is completed, the ITO substrate is soaked in a 5% NaOH solution by mass, and the cured photoresist is removed to obtain an ITO thin film electrode.
图6是ITO薄膜电极加工的流程图。Fig. 6 is a flow chart of ITO thin film electrode processing.
三、PDMS盖片与ITO基底的键合3. Bonding of PDMS cover sheet and ITO substrate
首先,将PDMS盖片设置在ITO基底上,并将其放置在等离子机的腔室内,按照等离子机的使用步骤进行等离子化处理,使PDMS盖片与ITO基底密封设置,构成微混合芯片。First, set the PDMS cover on the ITO substrate, place it in the chamber of the plasma machine, and perform plasma treatment according to the use steps of the plasma machine, so that the PDMS cover and the ITO substrate are sealed to form a micro-hybrid chip.
其次,取出微混合芯片,并在显微镜下,校准混合流道与薄膜电极的相对位置。Secondly, take out the micro-mixing chip, and under the microscope, calibrate the relative position of the mixing channel and the membrane electrode.
最后,完成校准后,用力按压几分钟,接着放置于烘烤箱中,在80℃的条件下,加热30分钟,得到微混合芯片。Finally, after the calibration is completed, press firmly for a few minutes, then place it in a baking oven, and heat it at 80°C for 30 minutes to obtain a micro-hybrid chip.
图7是PDMS盖片与ITO基底的键合图。Figure 7 is a bonding diagram of the PDMS cover sheet and the ITO substrate.
本实施例所述的一种基于固定电势的感应电荷电渗的微混合芯片的应用按照以下步骤进行:The application of a micro-hybrid chip based on fixed potential induced charge electroosmosis described in this embodiment is carried out according to the following steps:
一、颗粒的准备:1. Granule preparation:
(1)、缓冲液的配制:向去离子水中加入氯化钾和氨水,配置出PH值为9.2、电导率为1mS/m缓冲液。(1), preparation of buffer solution: add potassium chloride and ammonia water to deionized water, configure the buffer solution with a pH value of 9.2 and a conductivity of 1mS/m.
(2)、将缓冲液与荧光素粉混合,得到浓度为1.32×10-5mol/L的荧光素溶液。(2) Mix the buffer solution with the fluorescein powder to obtain a fluorescein solution with a concentration of 1.32×10 -5 mol/L.
(3)、首先,将无水乙醇与吐温溶液以9:1的体积比进行混合,得到A溶液(其主要作用是减少粒子在流道或者ITO基底表面粘结)。其次,将A溶液与缓冲液以1:99的体积比进行混合,得到B溶液。最后,将A溶液与荧光素溶液以1:99的体积比进行混合,得到C溶液。(3) First, mix absolute ethanol and Tween solution at a volume ratio of 9:1 to obtain solution A (its main function is to reduce the adhesion of particles on the flow channel or the surface of the ITO substrate). Secondly, solution A and buffer are mixed at a volume ratio of 1:99 to obtain solution B. Finally, solution A and fluorescein solution were mixed at a volume ratio of 1:99 to obtain solution C.
二、实验操作:2. Experimental operation:
(1)、打开与显微镜相连接的计算机、信号发生器、信号放大器、示波器、CCD以及荧光灯开关,观察设备运转是否正常,然后打开Q-Capture Pro图像采集软件,实时观察显微镜载物台。(1) Turn on the computer, signal generator, signal amplifier, oscilloscope, CCD and fluorescent light switch connected to the microscope to observe whether the equipment is operating normally, and then open the Q-Capture Pro image acquisition software to observe the microscope stage in real time.
(2)、首先,将等离子处理后的微混合芯片放置在显微镜的载物台上,调整芯片的位置与物镜的焦距。其次,经流出通孔向微混合芯片内部注入少量的B溶液,通过显微镜观察,确保微混合芯片内部的流道完全湿润。再次,将两个25微升的微量进样器固定在注射泵上,并分别吸入一定量的B溶液和C溶液。最后,通过金属连接器,使两个注射泵输出端口分别设置在第一流入通孔和第二流入通孔中。(2) First, place the plasma-treated micro-hybrid chip on the stage of the microscope, and adjust the position of the chip and the focal length of the objective lens. Secondly, inject a small amount of B solution into the micro-mixing chip through the outflow through hole, and observe through a microscope to ensure that the flow channel inside the micro-mixing chip is completely wet. Again, fix two 25 microliter microsamplers on the syringe pump, and inhale a certain amount of solution B and solution C respectively. Finally, through the metal connector, the two syringe pump output ports are respectively arranged in the first inflow through hole and the second inflow through hole.
(3)、首先,将第一激发电极、第二激发电极、第三激发电极、第四激发电极、第一悬浮电极和第二悬浮电极均与信号放大器相连。其次,将信号放大器与信号发生器相连。最后,调整信号发生器输出电压信号的幅值、相位和频率,以及注射泵的流量控制参数。(3) First, connect the first excitation electrode, the second excitation electrode, the third excitation electrode, the fourth excitation electrode, the first suspension electrode and the second suspension electrode to the signal amplifier. Second, connect the signal amplifier to the signal generator. Finally, adjust the amplitude, phase, and frequency of the signal generator output voltage signal, as well as the flow control parameters of the syringe pump.
输出电压信号的幅值、相位和频率的最优值通过Comsol仿真优化得到。The optimal values of the amplitude, phase and frequency of the output voltage signal are obtained through Comsol simulation optimization.
(4)、启动注射泵,使B溶液和C溶液以给定的流速分别流入第一流道和第二流道,当混合流道内的流体流速稳定时,启动信号发生器。(4) Start the syringe pump, so that solution B and solution C flow into the first flow channel and the second flow channel at a given flow rate, and when the fluid flow rate in the mixing flow channel is stable, start the signal generator.
(5)、通过显微镜观察混合流道,并再次调整微混合芯片的位置和物镜的焦距,直至观察到的荧光素粒子清晰,稳定度高时,进行视频的检测和录制。(5) Observe the mixing channel through a microscope, and adjust the position of the micro-mixing chip and the focal length of the objective lens again until the observed fluorescein particles are clear and stable, then video detection and recording are performed.
(6)、重复实施(3)至(5),不断调整电压、频率和流速,观察实验现象并记录。(6) Repeat (3) to (5), continuously adjust the voltage, frequency and flow rate, observe and record the experimental phenomena.
(7)、实验数据的处理和分析。(7) Processing and analysis of experimental data.
图4是第一激发电极和第二激发电极上施加10Vpp电压,第三激发电极和第四激发电极接地,第一悬浮电极施加8Vpp电压,第二悬浮电极施加2Vpp电压,电压频率均为500Hz时,混合流道中,B溶液与C溶液的混合流场图。从图4中可以观察到,在混合流道的流出端,B溶液与C溶液实现了很好的混合。Figure 4 shows that 10Vpp voltage is applied to the first excitation electrode and the second excitation electrode, the third excitation electrode and the fourth excitation electrode are grounded, 8Vpp voltage is applied to the first suspension electrode, and 2Vpp voltage is applied to the second suspension electrode, and the voltage frequency is 500Hz. , in the mixing flow channel, the mixing flow field diagram of solution B and solution C. It can be observed from Figure 4 that at the outflow end of the mixing channel, solution B and solution C are well mixed.
虽然在本文中参照了特定的实施方式来描述本发明,但是应该理解的是,这些实施例仅是本发明的原理和应用的示例。因此应该理解的是,可以对示例性的实施例进行许多修改,并且可以设计出其他的布置,只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是,可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是,结合单独实施例所描述的特征可以使用在其他所述实施例中。Although the invention is described herein with reference to specific embodiments, it should be understood that these embodiments are merely illustrative of the principles and applications of the invention. It is therefore to be understood that numerous modifications may be made to the exemplary embodiments and that other arrangements may be devised without departing from the spirit and scope of the invention as defined by the appended claims. It shall be understood that different dependent claims and features described herein may be combined in a different way than that described in the original claims. It will also be appreciated that features described in connection with individual embodiments can be used in other described embodiments.
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