CN106340485A - Wafer bonding clamping device, aligning machine, bonding machine and warping substrate adsorption method - Google Patents

Abstract

The invention discloses a wafer bonding clamping device, which comprises a carrier table (110), a clamping mechanism (120), a pressure head (130), and a pressure plate (140). The pressure head (130) is crimped on The crimping point of the pressure plate (140) is arranged on the area of the pressure plate (140) outside the corresponding substrate; the material of the pressure plate (140) is the same as that of the carrying platform (110). The platen (140) is compatible with all sizes of substrates. The invention also discloses an alignment machine and a bonding machine using the above seed wafer bonding clamping device. The invention can reduce or eliminate invalid lamination surfaces, facilitate temperature control, improve production efficiency, uniform lamination performance, increase yield, and is compatible with all wafer specifications and sizes. The invention also discloses an adsorption method for warped substrates, which can realize the adsorption of warped substrates.

Description

Wafer bonding clamping device and aligner and bonder, warped substrate adsorption method

technical field

The invention relates to the field of semiconductor device equipment manufacturing, in particular to a wafer bonding clamping device, an alignment machine and a bonding machine.

Background technique

Wafer bonding technology can bond two wafer substrates together, and the materials of the two wafer substrates can be the same or different. Wafer bonding is an important process for three-dimensional processing of semiconductor devices. Whether it is anodic bonding, direct bonding, metal expansion bonding, metal eutectic bonding and other bonding methods, the main process steps include the surface of the wafer. Cleaning and activation processes, wafer alignment, and final wafer bonding steps. Through these process steps, individual single wafers are aligned and then bonded together to achieve their three-dimensional structure. Bonding is not only a packaging technology in microsystem technology, but also an organic part of three-dimensional device manufacturing, which is used in both the front-end process and the back-end process of device manufacturing. The most important existing bonding applications are the bonding of silicon wafers to silicon wafers and the bonding of silicon wafers to glass substrates.

With the application of wafer bonding technology in micro-electromechanical systems (MEMS, Micro-Electro-MechanicalSystem), micro-optical systems, especially CMOS image sensor (CIS) manufacturing, and emerging three-dimensional chip manufacturing technologies, such as through-silicon vias (TSV) technology Widely used in the field, bonding technology has continuously put forward higher requirements for the performance of wafer bonding equipment. The bonding system is divided into two parts, the alignment machine and the bonding machine. As a relatively independent unit in the bonding system, the wafer bonding clamping device is one of the key factors affecting the bonding accuracy.

The wafer bonding clamping device realizes the alignment function of the upper and lower wafer substrates in the alignment machine, and realizes the wafer substrate pressing function in the bonding machine. After the bonding process is completed, the tape is taken out from the bonding machine. Bonding fixture for bonded wafer substrates. Therefore, the performance of the wafer bonding clamping device itself directly affects the bonding effect.

The wafer bonding clamping device in the prior art includes a carrier table, a clamping mechanism vertically arranged on both sides of the carrier table, and a pressure head arranged on the clamping mechanism. When in use, the upper substrate and the lower substrate are sequentially placed on the carrying platform, and the pressure head is directly pressed against the edge of the substrate. When bonding, after vacuuming, the clamping mechanism drives the pressure head to press and bond two wafer substrates to make them bond. The wafer bonding clamping device with such a structure has the following problems.

1. In the alignment machine, the bonded substrates are in direct contact with the substrates through the pressure head mechanism to compress the two substrates. In the atmospheric environment, the substrates will be pressed tightly, which will cause the two silicon wafers to remain in the pressed place. Air, even if it is sent into the bonding machine for vacuuming, the air in the pressing part of the pressure head cannot be taken away, resulting in the generation of air bubbles, which will lead to the generation of local invalid pressing surfaces after pressing. On the other hand, since the indenter directly presses the substrate, when bonding and pressing the substrate, the position of the indenter must be avoided. As a result, the area of the substrate covered by the indenter cannot be directly pressed, and the pressing force is transmitted to the indenter through the plane. The shielding area makes the force on the pressing area of the substrate press head smaller than that of the direct pressing surface, resulting in uneven pressing performance and lower yield of finished products.

2. Temperature control is an important indicator of the performance parameters of the bonding machine. Because the bonding process is different, sometimes it is necessary to accurately control the temperature of the upper substrate, and sometimes it is necessary to control the temperature of the lower substrate. In order to improve the compatibility of bonding , it is necessary to control the temperature of the upper and lower substrates at the same time. The upper and lower heating plates are designed in the bonding machine to control the temperature of the upper and lower substrates respectively. When the temperature of the upper and lower substrates reaches a certain value, the bonding effect is the best. The wafer bonding and clamping device in the prior art only has a carrier table. When the bonding machine needs to heat or cool the upper and lower substrates, the upper substrate is directly heated or cooled, and the lower substrate is heated or cooled by the carrier table, thereby The heat transfer paths of the upper and lower substrates are different, resulting in different temperature stabilization times for the upper and lower substrates, uneven heat transfer between the upper and lower substrates, and difficult simultaneous temperature control, which increases the difficulty of temperature control.

3. The wafer bonding clamping device is generally required to be compatible with substrates of the design size and below. If the design size is 300mm, it is hoped that the wafer bonding clamping device can be applied to 300mm and smaller wafer specifications below 300mm Dimensions of the substrate. When the wafer bonding clamping device in the prior art is used to be compatible with substrates of smaller sizes, it is often necessary to replace multiple indenter assemblies. Small area, when replacing wafer substrates of different sizes, it is necessary to change the specifications of the indenter at the same time to use, the operation is more complicated, and the production time is delayed.

4. The carrier table of the wafer bonding clamping device in the prior art is only equipped with a first-level vacuum adsorption function, and uses the same pressure to absorb the substrate. The carrier table with this structure cannot be used for warped sheets.

Contents of the invention

The technical problem to be solved by the present invention is to provide a wafer bonding method that reduces or eliminates invalid bonding surfaces, facilitates temperature control, improves production efficiency, uniform bonding performance, improves yield, and is compatible with all wafer sizes. clamping device.

In order to solve the above-mentioned technical problems, the technical solution of the present invention is: a wafer bonding clamping device, including a carrying platform for carrying the lower substrate and the upper substrate, and a mounting table for clamping the lower substrate and the upper substrate Clamping mechanism, the clamping mechanism is connected with a pressure head, and also includes a pressure plate arranged between the bearing platform and the pressure head, the material of the pressure plate is the same as that of the bearing platform, and the pressure head is crimped The crimping point on the pressure plate is arranged on the area of the pressure plate corresponding to the outside of the substrate.

Further, in the above-mentioned wafer bonding clamping device, the pressure plate and/or the carrier table are provided with a micro-grain suction cup structure.

Further, in the above-mentioned wafer bonding and clamping device, the structure of the compact suction cup includes several stages of vacuum adsorption ring grooves arranged in the pressure plate and/or the carrier table, and each stage of the vacuum adsorption ring The groove is provided with a vacuum suction port; each stage of the vacuum suction ring groove is connected to a vacuum air source with the same or different pressure through the corresponding vacuum suction hole or vacuum suction channel.

Further, in the above-mentioned wafer bonding clamping device, the vacuum suction hole or the vacuum suction channel is provided with a switch for controlling the on-off of the vacuum air source; the switch is a solenoid valve or a pressure valve.

Further, in the above-mentioned wafer bonding clamping device, at least one vacuum suction ring groove is provided at each stage.

Further, in the above-mentioned wafer bonding clamping device, the vacuum suction ring grooves of several stages can simultaneously or time-sharingly absorb the substrate.

Further, in the above-mentioned wafer bonding clamping device, when the vacuum adsorption ring grooves of each stage are provided with vacuum adsorption channels, all the vacuum adsorption ring grooves of the same stage are connected; when the vacuum adsorption ring grooves of each stage are set When there are vacuum adsorption holes, all the vacuum adsorption ring grooves at the same level are connected or not connected.

Further, in the above-mentioned wafer bonding clamping device, the vacuum suction ring groove is a circular groove or a polygonal groove.

Further, in the above-mentioned wafer bonding clamping device, the vacuum adsorption ring groove is three-stage, including a first-stage vacuum adsorption ring groove, a second-stage vacuum adsorption ring groove, and a third-stage vacuum suction ring groove arranged sequentially from outside to inside. The adsorption ring groove, the third-stage vacuum adsorption ring groove is two connected.

Compared with prior art, the beneficial effect of the present invention is:

In the wafer bonding clamping device of the present invention, a pressure plate is added between the carrier table and the indenter, and the crimping point of the indenter on the pressure plate is set in an area outside the corresponding substrate of the pressure plate; thus, The size of the pressure plate is larger than the size of the upper substrate and the lower substrate, the indenter does not directly contact the substrate, but contacts the substrate through the pressure plate, the clamping mechanism drives the indenter to press the pressure plate, and then passes through the pressure plate Press the upper and lower substrates, and the clamping mechanism drives the pressure head to press the pressure plate, thereby pressing the upper and lower substrates together. The present invention avoids the direct contact between the indenter and the substrate, and the stress applied on the platen is outside the area corresponding to the substrate of the platen, then the applied stress will avoid the position of the substrate corresponding to the platen, so that The entire pressure plate exerts the same stress on the substrate, so that the upper and lower substrates are pressed tightly, thereby reducing or eliminating the ineffective bonding surface where the pressure head is directly connected to the corresponding bonding point of the substrate. After clamping the upper and lower substrates, the wafer bonding clamping device does not need to make any avoidance when pressing in the bonding machine, avoiding or eliminating the unpressed area, and improving the bonding performance of the upper and lower substrates. Uniformity, thereby improving the qualified rate of finished products.

The material of the platen added in the present invention is the same as that of the carrying table, then when heating or cooling, the upper substrate transfers heat through the pressing plate, and the lower substrate transfers heat through the carrying table of the same material, and the heat transfer of the upper and lower substrates The path is the same, the temperature stabilization time of the upper and lower substrates is the same, the heat transfer of the upper and lower substrates is uniform, and the temperature is easy to control at the same time, thereby reducing the difficulty of temperature control.

The platen of the present invention is compatible with the specifications and sizes of all substrates, and can be compatible with all wafer specifications and sizes suitable for 16-inch wafers, 8-inch wafers and below, and does not need to be matched with different lengths of wafers according to different specifications and sizes. The clamping structure of the head, the upper and lower substrates are pressed by the pressing force transmitted to the platen by the indenter, so any substrate smaller than the size of the platen can be clamped without replacing the indenter assembly. Therefore, the steps of replacing devices are reduced, and the production efficiency is improved.

The present invention also provides an alignment machine for a wafer bonding system, including a light source, an alignment frame, a wedge-shaped positioning mechanism, and a mounting frame, on which the above-mentioned wafer is detachably installed forward or reverse Keyed clamping device.

In the alignment machine of the present invention, the light source passes through the carrier table and the pressure plate to precisely align the upper and lower substrates through the alignment frame and the wedge-shaped positioning mechanism, and the clamping mechanism drives the pressure plate to clamp the upper and lower substrates. Therefore, the present invention also has the effects of reducing or eliminating invalid bonding surfaces, facilitating temperature control, improving production efficiency, and being compatible with all wafer sizes. When the wafer bonding clamping device is installed forward, the upper substrate faces upward; when it is installed reversely, the upper substrate faces downward. Alignment can be achieved with either mounting method. In order not to affect the work of aligning the light source, the bearing table and the pressure plate are treated accordingly in the alignment mark area, such as using light-transmitting materials or partially opening escape holes.

The present invention also provides a bonding machine of a wafer bonding system, including the above-mentioned wafer bonding clamping device installed forwardly or backwardly.

The bonding machine of the present invention adopts the above-mentioned wafer bonding clamping device, therefore, the wafer bonding clamping device that reduces or eliminates the clamping of the invalid pressing surfaces of the upper and lower substrates can be put together into the In the bonding machine, the uniformity of bonding the upper and lower substrates of the wafer is improved, and the yield of bonding is improved.

The present invention also provides an adsorption method for warping substrates, comprising the following steps:

Step S1, preset vacuum degree T0;

Step S2, placing the substrate on the lower surface of the platen or the upper surface of the carrier table;

Step S3, control the on-off switch of the vacuum air source from the inside to the outside or from the inside to the outside, so that several stages of vacuum adsorption ring grooves are connected with vacuum air sources, and the corresponding vacuum adsorption rings are detected step by step by the vacuum detector. The vacuum degree Tn of the tank, if the vacuum degree Tn<preset vacuum degree T0, the vacuum adsorption ring groove of the corresponding stage has not established adsorption, and the switch of the vacuum adsorption ring groove corresponding to the unestablished adsorption function is turned off to disconnect the vacuum adsorption ring The vacuum air source of the groove, otherwise the vacuum adsorption ring groove of the corresponding stage establishes adsorption, where n represents the number of stages of the vacuum adsorption ring groove, which is a natural number greater than 1;

Step S4, comparing the number of vacuum adsorption ring grooves that have been established with the total number of stages n of vacuum adsorption ring grooves, if the number of vacuum adsorption ring grooves that have been established is greater than 1/ of the total number of stages of vacuum adsorption ring grooves At 2 o'clock, the platen or the carrying table performs the adsorption operation on the substrate to complete the adsorption on the warped substrate; otherwise, repeat the above step S3.

Further, in the above-mentioned adsorption method for warping substrates, the pressures of the vacuum air sources are the same or different.

Further, the above-mentioned adsorption method for warped substrates is characterized in that the switch is a solenoid valve.

The present invention also provides an adsorption method for warping substrates, comprising the following steps:

Step S1, preset vacuum degree T0;

Step S2, placing the substrate on the lower surface of the platen or the upper surface of the carrier table;

Step S3, sequentially control the on-off switch of the vacuum air source from the inside to the outside or from the inside to the outside, so that several levels of vacuum adsorption ring grooves are connected with vacuum air sources, and the vacuum detectors are used to detect the vacuum adsorption ring grooves of the corresponding stages step by step The vacuum degree Tn, if the vacuum degree Tn<preset vacuum degree T0, the vacuum adsorption ring groove of the corresponding stage has not established adsorption, and the switch of the vacuum adsorption ring groove corresponding to the unestablished adsorption function is turned off to disconnect the vacuum adsorption ring groove The vacuum air source, otherwise the vacuum adsorption ring groove of the corresponding stage establishes adsorption, where n represents the number of stages of the vacuum adsorption ring groove, which is a natural number greater than 1;

Step S4, comparing the number of vacuum adsorption ring grooves that have been established with the total number of stages n of vacuum adsorption ring grooves, if the number of vacuum adsorption ring grooves that have been established is greater than 1/ of the total number of stages of vacuum adsorption ring grooves At 2 o'clock, the platen or the carrying platform performs the adsorption operation on the substrate; otherwise, step S3 is performed in reverse order;

Step S5, compare the number of vacuum adsorption ring grooves that have been established with the total number of stages n of vacuum adsorption ring grooves, if the number of vacuum suction ring grooves that have been established for adsorption is greater than 1/ of the total number of stages of vacuum adsorption ring grooves At 2 o'clock, the platen or the carrying table performs the adsorption operation on the substrate to complete the adsorption on the warped substrate, otherwise, the adsorption fails; the above steps S3 to S5 are repeated.

Further, in the above-mentioned adsorption method for warping substrates, the pressures of the vacuum air sources are the same or different.

Further, in the above-mentioned adsorption method for realizing a warped substrate, the switch is a solenoid valve.

The adsorption method of the warped substrate provided by the invention can realize the adsorption of the warped substrate.

Description of drawings

Fig. 1 is a front view structural schematic diagram of Embodiment 1 of the present invention;

Fig. 2 is a schematic structural diagram of Embodiment 2 of the present invention;

Fig. 3 is a schematic cross-sectional view at A-A in Fig. 2;

Fig. 4 is a schematic diagram of the front view structure of Embodiment 3 of the present invention;

Fig. 5 is a schematic diagram of the front view structure of Embodiment 4 of the present invention;

Fig. 6 is a flow chart of the method of Embodiment 5 of the present invention;

Fig. 7 is a flow chart of the method of Embodiment 6 of the present invention.

As shown in the figure: 100, wafer bonding clamping device, 110, carrying table, 111, first-stage vacuum adsorption ring groove, 112, second-stage vacuum adsorption ring groove, 113, third-stage vacuum adsorption ring groove, 114, vacuum suction channel, 120, clamping mechanism, 130, pressure head, 140, pressure plate, 150, lower substrate, 160, upper substrate, 170, spacer, 200, mounting frame, 300, positioning mechanism, 400 , Alignment frame, 500, aim at the light source.

detailed description

The present invention is described in detail below in conjunction with accompanying drawing:

Embodiment one

As shown in FIG. 1 , the first embodiment provides a wafer bonding clamping device 100 , including a carrier 110 , a clamping mechanism 120 , a pressure head 130 , and a pressure plate 140 . Wherein, the pressure plate 140 is arranged between the carrier table 110 and the indenter 130, the specifications and sizes of the pressure plate 140 are compatible with the specifications and sizes of all substrates, and the indenter 130 is crimped on the pressure plate 140, The crimping point of the pressure head 130 on the pressure plate 140 is located outside the corresponding substrate of the pressure plate 140 ; the material of the pressure plate 140 is the same as that of the carrying platform 110 . Wherein, the carrying table 110 is used to carry the lower substrate 150 and the upper substrate 160; the clamping mechanism 120 is used to clamp the lower substrate 150 and the upper substrate 160, specifically, the clamping mechanism 120 is connected by the pressure head 130 A pressing force is applied to the platen 140 , so that the upper and lower substrates are pressed by the platen 140 , thereby clamping the lower substrate 150 and the upper substrate 160 . Wherein, the upper substrate 160 and the lower substrate 150 in this embodiment are both wafers, which may also be referred to as wafers.

In the wafer bonding clamping device 100 of the first embodiment, a pressure plate 140 is added between the carrier table 110 and the indenter 130, and the size of the pressure plate 140 is larger than that of the upper substrate 160 and the lower substrate 150, The crimping point where the indenter 130 is crimped on the platen 140 is arranged in an area outside the corresponding substrate of the platen 140; Contact the substrate, the clamping mechanism 120 drives the pressure head 130 to press the pressure plate 140, and then presses the upper and lower substrates through the pressure plate 140, the clamping mechanism 120 drives the pressure head 130 to press the pressure plate 140, thereby pressing the upper and lower substrates together. The present invention avoids direct contact between the indenter 130 and the substrate, and the stress applied to the platen 140 is outside the area corresponding to the substrate of the platen 140, so the applied stress will avoid the substrate corresponding to the platen 140 Position, so that the entire pressure plate 140 exerts the same stress on the substrate, so that the upper and lower substrates are pressed together, thereby reducing or eliminating the ineffective bonding surface where the pressure head 130 is directly connected to the corresponding bonding point of the substrate. After clamping the upper and lower substrates, the wafer bonding clamping device does not need to make any avoidance when pressing in the bonding machine, avoiding or eliminating the unpressed area, and improving the bonding performance of the upper and lower substrates. Uniformity, thereby improving the qualified rate of finished products.

The material of the platen 140 added in the present invention is the same as that of the carrier table 110. When heating or cooling, the upper substrate 160 transfers heat through the platen 140, and the lower substrate 150 transfers heat through the carrier table 110 of the same material. The heat transfer paths of the substrates are the same, the temperature stabilization time of the upper and lower substrates is the same, the heat transfer of the upper and lower substrates is uniform, and the temperature is easy to be controlled simultaneously, thereby reducing the difficulty of temperature control.

The pressure plate 140 of the present invention is compatible with all substrate specifications and sizes, and can be compatible with all wafer specifications and sizes suitable for 16-inch wafers, 8-inch wafers and below, and does not need to be matched with different lengths according to wafers of different specifications and sizes. In the clamping structure of the indenter, the upper and lower substrates are compressed by the pressing force transmitted to the platen 140 by the indenter 130, so any substrate smaller than the size of the platen 140 can be replaced without replacing the indenter 130 assembly. The bottom is clamped, thereby reducing the steps of replacing components and improving production efficiency.

Embodiment two:

As shown in FIG. 2 and FIG. 3 , the second embodiment is improved on the basis of the first embodiment, and the difference lies in that the pressure plate 140 and/or the bearing table 110 are provided with a dense textured suction cup structure. The dense pattern suction cup structure includes several stages of vacuum adsorption ring grooves arranged in the pressure plate 140 and/or the carrying platform 110, each stage of the vacuum adsorption ring groove is provided with a vacuum adsorption hole 114, and each stage of the vacuum adsorption ring groove is provided with a vacuum adsorption hole 114, and each stage The vacuum suction ring groove is connected to a vacuum air source with the same pressure or different pressures through the corresponding vacuum suction hole 114; the vacuum suction hole 114 can also be provided with a switch for controlling the on-off of the vacuum air source, and the switch can be Solenoid valve or pressure valve or manual valve. There is at least one vacuum adsorption ring groove at each stage. Wherein, the shape of the vacuum adsorption ring groove may be a circular groove or a polygonal groove such as a triangle, a rectangle, or a pentagon. The vacuum adsorption ring groove of the second embodiment is three-stage, including the first-stage vacuum adsorption ring groove 111, the second-stage vacuum adsorption ring groove 112 and the third-stage vacuum adsorption ring groove 113 arranged sequentially from outside to inside or from inside to outside , wherein, there are two third-stage vacuum adsorption ring grooves 113, and the shape of the vacuum adsorption ring grooves may be a circular groove. All the vacuum adsorption ring grooves at the same level can be connected or not connected. The advantage of the second embodiment is that the clamping of warped substrates can be realized. In the second embodiment, several stages of vacuum adsorption ring grooves can be connected to vacuum air sources with the same pressure or different pressures through the vacuum adsorption holes 114. The warped substrate is adsorbed from the center to the surrounding or from the surrounding to the center, thereby realizing the clamping of the warped substrate through the pressure plate; Open the second-stage vacuum adsorption ring groove 112 to absorb the substrate in the central peripheral area of the substrate, and finally open the first-stage vacuum adsorption ring groove 111 to suck the area outside the substrate to realize the adsorption of the warped sheet. In this embodiment, since the multi-stage direct air adsorption ring grooves are used to adsorb the substrate in sections, the substrate is not easily broken, and the purpose of clamping the warped substrate in the wafer bonding clamping device is realized. In this embodiment, vacuum air sources with different pressures can also be used to simultaneously absorb the warped substrate from the center to the surrounding or from the surrounding to the center, and achieve the purpose of clamping the warped substrate through the pressure plate.

As shown in FIG. 3 , as a preferred embodiment, the vacuum adsorption holes 114 in the second embodiment can be replaced by vacuum adsorption channels 115 , or a mixed arrangement of the two. Preferably, when the vacuum adsorption ring grooves of each stage are provided with vacuum adsorption channels 115, all the vacuum adsorption ring grooves of the same stage are connected to reduce the number of gas source pipelines connected to the pressure plate 140 or the bearing platform 110, Simplify the periphery of wafer bonding fixtures.

As shown in Figure 3, as a preferred embodiment, this embodiment also includes a spacer 170, which is used to be arranged between the upper substrate 160 and the lower substrate 150, so that the clamped upper substrate 160 and the lower substrate There is a certain gap between the sheets 150, and the spacer 170 is removed after vacuuming in the bonding machine to avoid the generation of air bubbles, thereby improving the qualified rate of bonding the upper and lower substrates.

Embodiment Three

As shown in Figures 4 and 5, the third embodiment provides an alignment machine for a wafer bonding system, including a light source 500, an alignment frame 400, a wedge-shaped positioning mechanism 300, and a mounting frame 200, on which the mounting frame 200 The wafer bonding clamping device 100 of the above-mentioned embodiment 1 or 2 is installed in a detachable forward or reverse direction.

In the alignment machine of Embodiment 3, the light source passes through the carrier platform and the pressure plate 140 to precisely align the upper and lower substrates through the alignment frame and the wedge-shaped positioning mechanism, and the upper and lower substrates are aligned by the clamping mechanism 120 to drive the pressure plate 140 Clamp. Therefore, the present invention also has the effects of reducing or eliminating invalid bonding surfaces, facilitating temperature control, improving production efficiency, and being compatible with all wafer sizes. Fig. 4 is a schematic diagram of the structure of the wafer bonding clamping device installed in the forward direction, with the upper substrate 160 facing upward; Fig. 5 is a schematic structural diagram of the wafer bonding clamping device installed in the reverse direction, with the upper substrate 160 facing downwards set up. Alignment can be achieved with either mounting method. In order not to affect the work of aligning the light source, the carrying platform and the pressure plate 140 are treated accordingly in the alignment mark area, such as using light-transmitting materials or partially opening escape holes.

Embodiment Four

The fourth embodiment provides a bonding machine of a wafer bonding system, including the above-mentioned wafer bonding clamping device 100 installed forwardly or backwardly.

The bonding machine of the fourth embodiment adopts the above-mentioned wafer bonding clamping device 100, therefore, the wafer bonding clamping device after clamping the invalid pressing surfaces of the upper and lower substrates can be reduced or eliminated together. Put it into the bonding machine, so as to improve the uniformity of the bonding of the upper and lower substrates of the wafer, and improve the yield of bonding.

Embodiment five

Embodiment 5 provides an adsorption method for warping substrates, including the following steps:

Step S1, preset vacuum degree T0;

Step S2, placing the substrate on the lower surface of the platen or the upper surface of the carrier table;

Step S3, control the on-off switch of the vacuum air source from the inside to the outside or from the inside to the outside, so that several stages of vacuum adsorption ring grooves are connected with vacuum air sources, and the corresponding vacuum adsorption rings are detected step by step by the vacuum detector. The vacuum degree Tn of the tank, if the vacuum degree Tn<preset vacuum degree T0, the vacuum adsorption ring groove of the corresponding stage has not established adsorption, and the switch of the vacuum adsorption ring groove corresponding to the unestablished adsorption function is turned off to disconnect the vacuum adsorption ring The vacuum air source of the groove, otherwise the vacuum adsorption ring groove of the corresponding stage establishes adsorption, where n represents the number of stages of the vacuum adsorption ring groove, which is a natural number greater than 1;

Step S4, comparing the number of vacuum adsorption ring grooves that have been established with the total number of stages n of vacuum adsorption ring grooves, if the number of vacuum adsorption ring grooves that have been established is greater than 1/ of the total number of stages of vacuum adsorption ring grooves At 2 o'clock, the platen or the carrying table performs the adsorption operation on the substrate to complete the adsorption on the warped substrate; otherwise, repeat the above step S3.

As shown in FIG. 6 , the fifth embodiment adopts three-stage vacuum adsorption ring grooves, that is, n=3. Then the specific steps in step S3 are as follows:

First, turn on the switch of the first stage vacuum adsorption ring groove, such as solenoid valve D1, detect the vacuum degree T1 of the first stage vacuum adsorption ring groove, compare T1 with T0, if T1<T0, the first stage vacuum adsorption ring groove If the adsorption is not established, close the solenoid valve D1; if T1>T0, the first-stage vacuum adsorption ring groove will establish adsorption;

Secondly, turn on the switch of the second-stage vacuum adsorption ring groove, such as solenoid valve D2, detect the vacuum degree T2 of the second-stage vacuum adsorption ring groove, compare T2 with T0, if T2<T0, the second-stage vacuum adsorption ring groove If the adsorption is not established, close the solenoid valve D2; if T2>T0, the second-stage vacuum adsorption ring groove will establish adsorption;

Again, turn on the switch of the third-stage vacuum adsorption ring groove, such as solenoid valve D3, detect the vacuum degree T3 of the third-stage vacuum adsorption ring groove, compare T3 with T0, if T3<T0, the third-stage vacuum adsorption ring groove If no adsorption is established, close the solenoid valve D3; if T3>T0, the third-stage vacuum adsorption ring groove will establish adsorption.

Embodiment six

This embodiment six provides an adsorption method for warping substrates, including the following steps:

Step S1, preset vacuum degree T0;

Step S2, placing the substrate on the lower surface of the platen or the upper surface of the carrier table;

Step S3, sequentially control the on-off switch of the vacuum air source from the inside to the outside or from the inside to the outside, so that several levels of vacuum adsorption ring grooves are connected with vacuum air sources, and the vacuum detectors are used to detect the vacuum adsorption ring grooves of the corresponding stages step by step The vacuum degree Tn, if the vacuum degree Tn<preset vacuum degree T0, the vacuum adsorption ring groove of the corresponding stage has not established adsorption, and the switch of the vacuum adsorption ring groove corresponding to the unestablished adsorption function is turned off to disconnect the vacuum adsorption ring groove The vacuum air source, otherwise the vacuum adsorption ring groove of the corresponding stage establishes adsorption, where n represents the number of stages of the vacuum adsorption ring groove, which is a natural number greater than 1;

Step S4, comparing the number of vacuum adsorption ring grooves that have been established with the total number of stages n of vacuum adsorption ring grooves, if the number of vacuum adsorption ring grooves that have been established is greater than 1/ of the total number of stages of vacuum adsorption ring grooves At 2 o'clock, the platen or the carrying platform performs the adsorption operation on the substrate; otherwise, step S3 is performed in reverse order;

Step S5, compare the number of vacuum adsorption ring grooves that have been established with the total number of stages n of vacuum adsorption ring grooves, if the number of vacuum suction ring grooves that have been established for adsorption is greater than 1/ of the total number of stages of vacuum adsorption ring grooves At 2 o'clock, the platen or the carrying platform performs the adsorption operation on the substrate, otherwise, the adsorption fails; the above steps S3 to S5 are repeated.

As shown in Figure 7, the difference between the sixth embodiment and the fifth embodiment is that in step S4, when the number of vacuum suction ring grooves for which adsorption has been established is less than 1/2 of the total number of stages of vacuum suction ring grooves, Step S3 is performed in reverse order, taking the three-stage vacuum ring groove as an example. The specific steps are:

First, open the switch of the third-stage vacuum adsorption ring groove, such as solenoid valve D3, detect the vacuum degree T3 of the third-stage vacuum adsorption ring groove, compare T3 with T0, if T3<T0, the third-stage vacuum adsorption ring groove If the adsorption is not established, close the solenoid valve D3; if T3>T0, the third-stage vacuum adsorption ring groove will establish adsorption;

Secondly, turn on the switch of the second-stage vacuum adsorption ring groove, such as solenoid valve D2, detect the vacuum degree T2 of the second-stage vacuum adsorption ring groove, compare T2 with T0, if T2<T0, the second-stage vacuum adsorption ring groove If the adsorption is not established, close the solenoid valve D2; if T2>T0, the second-stage vacuum adsorption ring groove will establish adsorption;

Again, open the switch of the first-stage vacuum adsorption ring groove, such as solenoid valve D1, detect the vacuum degree T1 of the first-stage vacuum adsorption ring groove, compare T1 with T0, if T1<T0, the first-stage vacuum adsorption ring groove If the adsorption is not established, close the solenoid valve D1; if T1>T0, the first-stage vacuum adsorption ring groove will establish adsorption.

The vacuum air sources of Embodiment 5 and Example 6 can be vacuum air sources of the same pressure, or vacuum air sources of different pressures. When vacuum air sources with different pressures are used, switches corresponding to several stages of vacuum adsorption ring grooves can also be turned on at the same time, and vacuum air sources with different vacuum pressures can be used to adsorb the warped substrate.

The present invention is not limited to the specific embodiments described above, and all the various changes made within the spirit and scope of the claims of the present invention are within the protection scope of the present invention.

Claims (18)

1. a kind of wafer bonding clamping device, including for carrying subtegulum (150) and upper substrate (160) Plummer (110), for clamping the clamp system (120) of subtegulum (150) and upper substrate (160), Described clamp system (120) is connected with pressure head (130) it is characterised in that also including being arranged at described carrying Platen (140) between platform (110) and pressure head (130), described platen (140) and described plummer (110) Material identical, the crimping point that described pressure head (130) is crimped on described platen (140) is arranged at described pressure Region outside the corresponding substrate of disk (140).

2. wafer bonding clamping device as claimed in claim 1 is it is characterised in that described platen (140) And/or described plummer (110) is provided with fine groove sucker structure.

3. wafer bonding clamping device as claimed in claim 2 is it is characterised in that described fine groove sucker is tied Structure, including some grades of vac sorbs being arranged in described platen (140) and/or described plummer (110) Annular groove, every grade of described vac sorb annular groove is provided with vacuum absorption holes (114) or vac sorb passage (115)； Every grade of described vac sorb annular groove passes through corresponding described vacuum absorption holes (114) or vac sorb passage (115) Connect the vacuum source having pressure identical or differing.

4. wafer bonding clamping device as claimed in claim 3 is it is characterised in that described vacuum absorption holes Or vac sorb passage (115) is provided with the switch for controlling vacuum source break-make (114).

5. wafer bonding clamping device as claimed in claim 4 is it is characterised in that described switch is electromagnetism Valve or pressure valve.

6. wafer bonding clamping device as claimed in claim 3 is it is characterised in that every grade of described vacuum is inhaled Follower ring groove is at least provided with one.

7. wafer bonding clamping device as claimed in claim 3 is it is characterised in that the described vacuum of some levels Absorption annular groove is simultaneously or substrate is adsorbed in timesharing.

8. wafer bonding clamping device as claimed in claim 3 is it is characterised in that work as every grade of described vacuum During absorption annular groove setting vac sorb passage (115), connect with all described vac sorb annular grooves of one-level； When every grade of described vac sorb annular groove is provided with vacuum absorption holes (114), inhale with all described vacuum of one-level Follower ring groove connects or not insertion.

9. wafer bonding clamping device as claimed in claim 3 is it is characterised in that described vac sorb ring Groove is circular trough or polygon groove.

10. wafer bonding clamping device as claimed in claim 3 is it is characterised in that described vac sorb Annular groove is three-level, first order vac sorb annular groove (111) setting gradually including ecto-entad or from inside to outside, Second level vac sorb annular groove (112) and third level vac sorb annular groove (113), described third level vacuum is inhaled Follower ring groove (113) is two connecting.

A kind of 11. be aligned machines of wafer bonding system are it is characterised in that include light source (500), be aligned machine Frame (400), wedge shape detent mechanism (300), installing rack (200), described installing rack (200) is upper removable Install forward or backwards just like the wafer bonding clamping device any one of claim 1-10.

A kind of 12. bonders of wafer bonding system it is characterised in that include install forward or backwards as Wafer bonding clamping device any one of claim 1-10.

A kind of 13. adsorption methods realizing warpage substrate are it is characterised in that comprise the following steps:

Step s1, predetermined vacuum degree t0；

Step s2, substrate is positioned over the lower surface of described platen or the upper surface of plummer；

Step s3, by the switch controlling vacuum source break-make outside introversion and extroversion or order from inside to outside successively, with So that some grades of vac sorb annular grooves is connected vacuum source, detects respective stages vacuum step by step by vacuum detector Vacuum tn of absorption annular groove, if vacuum tn < predetermined vacuum degree t0, the vac sorb annular groove of respective stages Do not set up absorption, close the switch not setting up adsorption function corresponding vac sorb annular groove, to disconnect this vacuum The vacuum source of absorption annular groove, the otherwise vac sorb annular groove foundation absorption of respective stages, wherein n represents vacuum The series of absorption annular groove, is the natural number more than 1；

Step s4, by total series n ratio of the vac sorb annular groove number of built vertical absorption and vac sorb annular groove Relatively, if the number of the vacuum suction annular groove of built vertical absorption is more than the 1/2 of total series of vac sorb annular groove, pressure The disk or plummer execution adsorption operation to substrate, completes the absorption to warpage substrate；Otherwise, repeat above-mentioned Step s3.

14. adsorption methods realizing warpage substrate as claimed in claim 13 are it is characterised in that described The pressure of vacuum source is identical or differs.

15. adsorption methods realizing warpage substrate as claimed in claim 13 are it is characterised in that described Switch as electromagnetic valve.

A kind of 16. adsorption methods realizing warpage substrate are it is characterised in that comprise the following steps:

Step s1, predetermined vacuum degree t0；

Step s2, substrate is positioned over the lower surface of described platen or the upper surface of plummer；

Step s3, is controlled the switch of vacuum source break-make successively by introversion and extroversion or order from inside to outside, so that Some grades of vac sorb annular grooves are connected vacuum source, detects that respective stages vacuum is inhaled step by step by vacuum detector Vacuum tn of follower ring groove, if < predetermined vacuum degree t0, the vac sorb annular groove of respective stages is not for vacuum tn Set up absorption, close the switch not setting up adsorption function corresponding vac sorb annular groove, to disconnect the suction of this vacuum The vacuum source of follower ring groove, the otherwise vac sorb annular groove foundation absorption of respective stages, wherein n represents that vacuum is inhaled The series of follower ring groove, is the natural number more than 1；

Step s4, by total series n ratio of the vac sorb annular groove number of built vertical absorption and vac sorb annular groove Relatively, if the number of the vacuum suction annular groove of built vertical absorption is more than the 1/2 of total series of vac sorb annular groove, pressure The disk or plummer execution adsorption operation to substrate；Otherwise, reverse sequence execution step s3；

Step s5, by total series n ratio of the vac sorb annular groove number of built vertical absorption and vac sorb annular groove Relatively, if the number of the vacuum suction annular groove of built vertical absorption is more than the 1/2 of total series of vac sorb annular groove, pressure The disk or plummer execution adsorption operation to substrate, completes the absorption to warpage substrate, otherwise, adsorbs unsuccessfully； Repeat above-mentioned steps s3 to s5.

17. adsorption methods realizing warpage substrate as claimed in claim 15 are it is characterised in that described The pressure of vacuum source is identical or differs.

18. adsorption methods realizing warpage substrate as claimed in claim 15 are it is characterised in that described Switch as electromagnetic valve.