CN106338867B - VCOM Wiring structure, display panel and VCOM Wiring structure production method - Google Patents
VCOM Wiring structure, display panel and VCOM Wiring structure production method Download PDFInfo
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- CN106338867B CN106338867B CN201610930193.XA CN201610930193A CN106338867B CN 106338867 B CN106338867 B CN 106338867B CN 201610930193 A CN201610930193 A CN 201610930193A CN 106338867 B CN106338867 B CN 106338867B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 352
- 239000011241 protective layer Substances 0.000 claims abstract description 35
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention relates to technical field of touch-control display, in particular to a kind of to promote the VCOM Wiring structure of VCOM stability and the display panel with it and VCOM Wiring structure production method.The present invention provides a kind of VCOM Wiring structure; including the first routing layer, the second routing layer, third routing layer, the first insulating layer, insulating protective layer, VCOM electrode layer, third insulating layer and the pixel electrode layer from bottom to top set gradually; insulating protective layer is lacked in narrow frame line areas marginal portion; VCOM electrode layer and third routing layer are electrically connected; third routing layer and the second routing layer are bridged by pixel electrode layer; first routing layer and the second routing layer are electrically connected, and third routing layer covers cabling area and narrow frame circuit region.The present invention also provides a kind of display panel and VCOM Wiring structure manufacturing methods.
Description
Technical field
The present invention relates to technical field of touch-control display, in particular to a kind of VCOM Wiring structure that can promote VCOM stability
With display panel and VCOM Wiring structure production method with it.
Background technique
With the development of LCD technology, liquid crystal display panel narrow frame design has become inexorable trend.However with
Narrowing for frame, peripheral reference voltage (VCOM) cabling of thin film transistor (TFT) (Thin Film Transistor, TFT) substrate
Also increasingly thinner, so that VCOM signal is weaker, cause VCOM unstable, is easy to produce the bad phenomenons such as flashing, green picture.
Existing VCOM cabling is dropped by increasing the defeated enrolled quantity of cabling, trace width and track thickness etc.
The resistance of low cabling, to promote the stability of VCOM.But due to the limitation of VCOM cabling space, it is impossible to unconfined increasing
Add the defeated enrolled quantity of cabling and routing line width, in addition, the blocked up fraction defective that can increase processing procedure of track thickness.
Summary of the invention
In view of the above situation, it is necessary to a kind of simple VCOM Wiring structure of structure is provided, it is in the prior art to solve
Problem.
The present invention provides a kind of VCOM Wiring structure, including the first routing layer, the second routing layer, third routing layer, first
Insulating layer, insulating protective layer, VCOM electrode layer, third insulating layer and pixel electrode layer, first routing layer are set to glass
In substrate, described the is provided with above the substrate of glass of the top of first routing layer and not set first routing layer
One insulating layer, is provided with second routing layer above first insulating layer, second routing layer and not set described
It is provided with the insulating protective layer above first insulating layer of second routing layer, the top of the insulating protective layer is under
The VCOM electrode layer, the third routing layer, the third insulating layer and the pixel electrode layer are disposed on and,
The insulating protective layer is lacked in narrow frame line areas marginal portion, and the VCOM electrode layer electrically connects with the third routing layer
It connecing, the third routing layer is electrically connected with second routing layer by the bridge joint of the pixel electrode layer, and described first
Routing layer and second routing layer are electrically connected, the third routing layer covering cabling area and the narrow frame circuit region.
Further, the third routing layer is net-shaped metal layer structure, first routing layer and second cabling
The electrical junction of layer, which is set up separately, to be placed in the mesh of the third routing layer, offers first above the first routing layer of Yu Suoshu
Via hole, the second via hole is offered above the second routing layer of Yu Suoshu, and the pixel electrode layer passes through first via hole and institute
It states the second via hole and bridges first routing layer and second routing layer.
Further, the missing insulating protective layer in the mesh of the third routing layer.
Further, the third routing layer is sheet metal layers structure, opens up the first insulation on first insulating layer
Layer via hole, first routing layer and second routing layer are electrically connected by the first insulating layer via hole.
Further, the insulating protective layer includes being located at the relatively thin second insulating layer of lower layer and the guarantor thicker positioned at upper layer
Sheath, the protective layer are lacked in narrow frame line areas marginal portion.
Further, the VCOM Wiring structure further includes amorphous silicon layer, and the amorphous silicon layer is set to described first absolutely
Top between edge layer and the protective layer and positioned at first routing layer.
The present invention also provides a kind of display panel, the display panel includes the VCOM Wiring structure.
The present invention also provides a kind of VCOM Wiring structure manufacturing methods, comprising steps of on a side surface of substrate of glass
Make the first routing layer；In first routing layer top and be not provided with first routing layer substrate of glass above make
Make the first insulating layer；Amorphous silicon layer is made above first insulating layer；Top and not set institute in the amorphous silicon layer
It states and is provided with the second routing layer above first insulating layer of amorphous silicon layer；In top, the part of second routing layer
The top of first insulating layer of the top of the amorphous silicon layer and not set second routing layer and the amorphous silicon layer
From bottom to top successively make second insulating layer and protective layer；VCOM electrode layer is made above the protective layer in cabling area；
In the VCOM electrode layer top and be not provided with the VCOM electrode layer the protective layer above from bottom to top successively make
Make third routing layer and third insulating layer；The second via hole is opened up above second routing layer, while being walked in the third
Third via hole is opened up above line layer, is made through second via hole and the third via hole by second routing layer and institute
State the pixel electrode layer of third routing layer bridge joint.
Further, first insulating layer is etched after first insulating layer that completes forms the first insulating layer
Via hole, when making second routing layer, second routing layer passes through the first insulating layer via hole and second cabling
The electric connection of layer.
Further, the first via hole is opened up above first routing layer, made second routing layer and institute
While stating the pixel electrode layer of third routing layer bridge joint, through first via hole and second via hole production by described the
Another pixel electrode layer of one routing layer and second routing layer bridge joint.
The technical solution of the embodiment of the present invention has the benefit that above-mentioned VCOM Wiring structure, cover cabling area and
Narrow frame line areas promotes VCOM signal, and then promote VCOM stability so that VCOM cabling significantly broadens.
Detailed description of the invention
Fig. 1 is the planar structure schematic diagram of VCOM Wiring structure of the invention；
Fig. 2 is the cross-sectional view at II-II place in Fig. 1；
Fig. 3 is the cross-sectional view at III-III place in Fig. 1；
Fig. 4 is the planar structure schematic diagram of the contact hole of the VCOM Wiring structure of first embodiment of the invention；
Fig. 5 is the cross-sectional view at V-V place in Fig. 4；
Fig. 6 is the planar structure schematic diagram of the contact hole of the VCOM Wiring structure of second embodiment of the invention；
Fig. 7 is the cross-sectional view at VII-VII place in Fig. 6.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to the embodiment of the present invention
It is described in further detail.So-called orientation "upper" and "lower" are only to indicate that opposite orientation is closed in the description of the present invention
System.
Fig. 1 is the planar structure schematic diagram of VCOM Wiring structure of the invention, and Fig. 2 is the cross-sectional view at II-II place in Fig. 1,
Fig. 3 is the cross-sectional view at III-III place in Fig. 1, and Fig. 4 is the planar junction of the contact hole of the VCOM Wiring structure of first embodiment of the invention
Structure schematic diagram, Fig. 5 are the cross-sectional views at V-V place in Fig. 4, and Fig. 6 is the contact of the VCOM Wiring structure of second embodiment of the invention
The planar structure schematic diagram in hole, Fig. 7 are the cross-sectional views at VII-VII place in Fig. 6.
Specifically, VCOM Wiring structure 10 of the invention includes the first routing layer 11, the second cabling referring to Figure 1 to Fig. 7
Layer 12, third routing layer 13, the first insulating layer 14, amorphous silicon (α-si) layer 15, insulating protective layer 16, VCOM electrode layer 17, the
Three insulating layers 18 and pixel electrode layer 19.
First routing layer 11 is set to the part in substrate of glass 21, and the first routing layer 11 can be metal routing layer.First
The top of routing layer 11 is provided with the first insulating layer 14 (gate insulating layer), i.e. the first insulating layer 14 is set to the first routing layer 11
Top and be not provided with the top of substrate of glass 21 of the first routing layer 11.The top of first insulating layer 14 is provided with amorphous silicon
Layer 15, amorphous silicon layer 15 top and be not provided with the top of the first insulating layer 14 of amorphous silicon layer 15 and be provided with second and walk
Line layer 12.It is the top of the second routing layer 12, the top of portion of amorphous silicon layer 15 and is not provided with the second routing layer 12 and non-
The top of first insulating layer 14 of crystal silicon layer 15 is provided with insulating protective layer 16, and insulating protective layer 16 includes relatively thin second of lower layer
Thicker protection (OC) layer 164 of insulating layer 162 and upper layer, protection (OC) layer 164 have been sequentially arranged above VCOM electrode layer 17, the
Three routing layers 13, third insulating layer 18 and pixel electrode layer 19.It should be noted that the first routing layer 11 and the second routing layer
12 may be used as Different electrodes in different location, such as the first routing layer 11 can be used as the grid of TFT substrate or the public affairs of pixel
(com) electrode, the second routing layer 12 can be used as source electrode, drain electrode or line altogether.VCOM electrode layer 17 be present in effective display area and
In the cabling area 22 at its edge, and third routing layer 13 is electrically connected with VCOM electrode layer 17 below in cabling area 22,
VCOM electrode layer 17 is made of ITO material, and third routing layer 13 is metal routing layer, and third routing layer 13 can reduce VCOM electricity
The resistance value of pole layer 17, while VCOM electrode layer 17 being drawn.Pixel electrode layer 19 is used as pixel electrode in pixel, in addition to
Other regions (cabling area 22, narrow frame line areas 23), pixel electrode layer 19 is a bridge layer, such as the first routing layer 11
And the second electric connection between routing layer 12, it is necessary to which pixel electrode layer 19 passes through the via hole and the of 11 top of the first routing layer
One routing layer 11 links together, while pixel electrode layer 19 passes through the via hole and the second routing layer 12 of 12 top of the second routing layer
It links together, pixel electrode layer 19 plays the role of connecting bridge, in this way, the first routing layer 11 and the second routing layer 12 electrically connect
It is connected to one, pixel electrode layer 19 is made of ITO material.
In order to increase the width of VCOM Wiring structure 10 (third routing layer 13) to promote VCOM stability, third routing layer
13 are extended in narrow frame line areas 23 by cabling area 22.And be to avoid side light according to the influence to narrow frame TFT, it needs to remove
The protective layer 164 of 23 marginal portion of narrow frame line areas, so that third routing layer 13 can be extended downwardly in the position and will be protected
164 lateral margin of sheath cladding, cannot be transmitted into again in narrow frame TFT in the blocking downside illumination of third routing layer 13.
Referring to fig. 4 and Fig. 5, in the first embodiment, third routing layer 13 is net-shaped metal layer structure, the first routing layer 11
It is set in the mesh of third routing layer 13 with the part of the second routing layer 12 bridge joint, which is not provided with protective layer 164, passes through
First insulating layer 14, second insulating layer 162 and third insulating layer 18 offer the first via hole 31 in the top of the first routing layer 11,
The second via hole 32, pixel electrode are offered in the top of the second routing layer 12 across second insulating layer 162 and third insulating layer 18
Layer 19 passes through the first via hole 31 and the second via hole 32 and connects respectively with the first routing layer 11 and the second routing layer 12 bridge joint.
Referring to Fig. 6 and Fig. 7, in a second embodiment, third routing layer 13 is whole face sheet metal layers structure, avoids third
13 aperture of routing layer, therefore the first insulation is opened up in the first insulating layer 14 after having made the first insulating layer 14 in manufacturing process
Layer via hole 142, makes the second routing layer 12, the second routing layer 12 is in the first insulating layer via hole above the first insulating layer 14
The first insulating layer via hole 142 is protruded at 142 and is electrically connected with the first insulating layer 14, then successively makes second insulating layer again
162, protective layer 164, third routing layer 13 and third insulating layer 18.It is not required between first routing layer 11 and the second routing layer 12
Bridge joint is additionally carried out to be connected to.
The invention also includes a kind of display panel, display panel includes VCOM Wiring structure 10.
VCOM Wiring structure manufacturing method of the invention includes the following steps:
S201: in making the first routing layer 11 on a side surface of substrate of glass 21.
S202: in the first routing layer 11 top and be not provided with the first routing layer 11 substrate of glass 21 above make
One insulating layer 14.If third routing layer 13 uses whole face sheet metal layers structure, need to insulate by etch process to first
Layer 14 opens up the first insulating layer via hole 142, so as to the electric connection of the first routing layer 11 and the second routing layer 12.
S203: amorphous silicon layer 15 is made above the first insulating layer 14.
S204: in amorphous silicon layer 15 top and be not provided with the top of the first insulating layer 14 of amorphous silicon layer 15 and be provided with
Second routing layer 12.
S205: in the top of the second routing layer 12, the top of portion of amorphous silicon layer 15 and it is not provided with the second routing layer 12
Second insulating layer 162 and protective layer 164 are from bottom to top successively made with the top of the first insulating layer 14 of amorphous silicon layer 15.Protection
Layer 164 need to be removed locally in certain positions or not made.
S206: VCOM electrode layer 17 is made above the protective layer 164 in cabling area 22.
S207: in VCOM electrode layer 17 top and be not provided with VCOM electrode layer 17 protective layer 164 above by lower and
On successively make third routing layer 13 and third insulating layer 18.
S208: the second via hole 32 through other layers is opened up in the top of the second routing layer 12, while in third routing layer 13
Top open up the third via hole 33 through other layers, then through the second via hole 32 and the production of third via hole 33 by the second routing layer
12 and third routing layer 13 bridge pixel electrode layer 19.It is net-shaped metal layer structure for third routing layer 13, it need to also be in the
The top of one routing layer 11, which is opened up, has the first via hole 31 through other layers, is making the second routing layer 12 and third routing layer 13
While bridging pixel electrode layer 19, make through the first via hole 31 and the second via hole 32 by the first routing layer 11 and the second cabling
Another pixel electrode layer 19 of 12 bridge joint of layer.
The technical solution of the embodiment of the present invention has the benefit that above-mentioned VCOM Wiring structure 10, covers cabling area
22 and narrow frame line areas 23, it may make VCOM cabling significantly to broaden, promote VCOM signal, and then promote VCOM stability.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, though
So the present invention has been disclosed as a preferred embodiment, and however, it is not intended to limit the invention, any technology people for being familiar with this profession
Member, without departing from the scope of the present invention, when the technology contents using the disclosure above make a little change or modification
It is right according to the technical essence of the invention for the equivalent embodiment of equivalent variations, but without departing from the technical solutions of the present invention
Any simple modification, equivalent change and modification made by above embodiments, all of which are still within the scope of the technical scheme of the invention.
Claims (9)
1. a kind of VCOM Wiring structure (10), which is characterized in that including the first routing layer (11), the second routing layer (12), third
Routing layer (13), the first insulating layer (14), amorphous silicon layer (15), insulating protective layer (16), VCOM electrode layer (17), third insulation
Layer (18) and pixel electrode layer (19)；
First routing layer (11) is set on substrate of glass (21), the top of first routing layer (11) and not set
First insulating layer (14), first insulating layer are provided with above the substrate of glass (21) of first routing layer (11)
(14) amorphous silicon layer (15) are provided with above, the amorphous silicon layer (15) top and be not provided with the amorphous silicon layer
(15) it is provided with second routing layer (12) above first insulating layer (14), second routing layer (12) and not
It is arranged above first insulating layer (14) of second routing layer (12) and is provided with the insulating protective layer (16), it is described
Insulating protective layer (16) includes positioned at the relatively thin second insulating layer (162) of lower layer and positioned at the thicker protective layer in upper layer (164), institute
The top for stating insulating protective layer (16) is from bottom to top disposed with the VCOM electrode layer (17), the third routing layer
(13), the third insulating layer (18) and the pixel electrode layer (19)；
The protective layer (164) of the insulating protective layer (16) is lacked in narrow frame line areas (23) marginal portion, the VCOM electricity
Pole layer (17) and the third routing layer (13) are electrically connected, and the third routing layer (13) and second routing layer (12) are logical
It crosses the bridge joint of the pixel electrode layer (19) and is electrically connected, first routing layer (11) and second routing layer (12) electricity
Property connection, the third routing layer (13) covering cabling area (22) and the narrow frame line areas (23).
2. VCOM Wiring structure (10) as described in claim 1, it is characterised in that: the third routing layer (13) is netted gold
Belong to layer structure, the electrical junction of first routing layer (11) and second routing layer (12), which is set up separately, to be placed in the third and walk
It in the mesh of line layer (13), is offered above the first routing layer of Yu Suoshu (11) the first via hole (31), the second cabling of Yu Suoshu
It is offered the second via hole (32) above layer (12), the pixel electrode layer (19) passes through first via hole (31) and described the
Two via holes (32) and bridge first routing layer (11) and second routing layer (12).
3. VCOM Wiring structure (10) as claimed in claim 2, it is characterised in that: in the mesh of the third routing layer (13)
Lack the protective layer (164) of the insulating protective layer (16).
4. VCOM Wiring structure (10) as described in claim 1, it is characterised in that: the third routing layer (13) is lamellar gold
Belong to layer structure, open up the first insulating layer via hole (142) on first insulating layer (14), first routing layer (11) with it is described
Second routing layer (12) is electrically connected by the first insulating layer via hole (142).
5. VCOM Wiring structure (10) as described in claim 1, it is characterised in that: the VCOM Wiring structure (10) further includes
Amorphous silicon layer (15), the amorphous silicon layer (15) is set between first insulating layer (14) and the protective layer (16) and position
In the top of first routing layer (11).
6. a kind of display panel, which is characterized in that the display panel (10) includes as claimed in claim 1 to 5
VCOM Wiring structure (10).
7. a kind of VCOM Wiring structure manufacturing method, which is characterized in that comprising steps of
In making the first routing layer (11) on a side surface of substrate of glass (21)；
In first routing layer (11) top and be not provided with above the substrate of glass (21) of first routing layer (11)
Make the first insulating layer (14)；
Amorphous silicon layer (15) are made above first insulating layer (14)；
In the top and not set amorphous silicon layer (15) of the amorphous silicon layer (15) first insulating layer (14) it is upper
Side is provided with the second routing layer (12)；
It is walked in the top of top, the part amorphous silicon layer (15) of second routing layer (12) and not set described second
From bottom to top successively the second insulation of production of the top of first insulating layer (14) of line layer (12) and the amorphous silicon layer (15)
Layer (162) and protective layer (164)；
VCOM electrode layer (17) are made above the protective layer (164) in cabling area (22)；
In the VCOM electrode layer (17) top and be not provided on the protective layer (164) of the VCOM electrode layer (17)
Side from bottom to top successively makes third routing layer (13) and third insulating layer (18)；
It is opened up the second via hole (32) above second routing layer (12), while in the top of the third routing layer (13)
Third via hole (33) are opened up, are made through second via hole (32) and the third via hole (33) by second routing layer
(12) and the third routing layer (13) bridge joint pixel electrode layer (19).
8. VCOM Wiring structure manufacturing method as claimed in claim 7, it is characterised in that: in first insulation that completes
First insulating layer (14) is etched after layer (14) and forms the first insulating layer via hole (142), makes second routing layer
(12) when, second routing layer (12) passes through the electricity of the first insulating layer via hole (142) and second routing layer (12)
Property connection.
9. VCOM Wiring structure manufacturing method as claimed in claim 7, it is characterised in that: first routing layer (11) it is upper
The first via hole of Fang Kaishe (31), in the pixel electricity that production bridges second routing layer (12) and the third routing layer (13)
While pole layer (19), make through first via hole (31) and second via hole (32) by first routing layer (11)
With another pixel electrode layer (19) of second routing layer (12) bridge joint.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610930193.XA CN106338867B (en) | 2016-10-31 | 2016-10-31 | VCOM Wiring structure, display panel and VCOM Wiring structure production method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610930193.XA CN106338867B (en) | 2016-10-31 | 2016-10-31 | VCOM Wiring structure, display panel and VCOM Wiring structure production method |
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| CN106338867A CN106338867A (en) | 2017-01-18 |
| CN106338867B true CN106338867B (en) | 2019-04-05 |
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| JPWO2018181522A1 (en) * | 2017-03-31 | 2020-02-13 | 株式会社ジャパンディスプレイ | Electronic equipment and manufacturing method thereof |
| CN110610659B (en) * | 2019-08-15 | 2021-11-23 | 福建华佳彩有限公司 | Panel structure and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003005206A (en) * | 2001-06-18 | 2003-01-08 | Hitachi Ltd | Liquid crystal display device |
| JP2004061688A (en) * | 2002-07-26 | 2004-02-26 | Fujitsu Display Technologies Corp | Liquid crystal display device substrate, liquid crystal display device having the same, and method of manufacturing the same |
| CN102760718A (en) * | 2011-04-27 | 2012-10-31 | 索尼公司 | Semiconductor device, display device, and electronic device |
| CN102844803A (en) * | 2010-04-22 | 2012-12-26 | 夏普株式会社 | Active matrix substrate and display device |
-
2016
- 2016-10-31 CN CN201610930193.XA patent/CN106338867B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003005206A (en) * | 2001-06-18 | 2003-01-08 | Hitachi Ltd | Liquid crystal display device |
| JP2004061688A (en) * | 2002-07-26 | 2004-02-26 | Fujitsu Display Technologies Corp | Liquid crystal display device substrate, liquid crystal display device having the same, and method of manufacturing the same |
| CN102844803A (en) * | 2010-04-22 | 2012-12-26 | 夏普株式会社 | Active matrix substrate and display device |
| CN102760718A (en) * | 2011-04-27 | 2012-10-31 | 索尼公司 | Semiconductor device, display device, and electronic device |
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