CN106329959B - High pressure self-powered circuit - Google Patents
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Abstract
The present invention provides a kind of high pressure self-powered circuit, and the high pressure self-powered circuit includes: JFET adjustment pipe, current-limiting resistance, first switch tube, second switch, electric capacity of voltage regulation, control circuit and power MOS pipe.The present invention uses a kind of novel high pressure self-powered circuit structure and method, chip eliminates VCC energization pins, peripheral circuit is more simplified, and high voltage startup resistance and electric capacity of voltage regulation are saved, and system cost is low, small in size compared with traditional high-voltage power supply circuit.Clamp diode and modulation circuit are eliminated inside circuit, circuit structure is simple, and high reliablity, chip area substantially reduces, and chip cost and system cost substantially reduce.Further, high pressure self-powered circuit with current limiting function, charging current is restricted in system establishment process, and current value is able to maintain constant, vdd voltage linear rise effectively prevents overshoot phenomenon and the excessive damage caused by device of electric current in power up.
Description
Technical field
The invention belongs to IC design fields, more particularly to a kind of high pressure self-powered circuit.
Background technique
In LED drive circuit, it will usually use high-voltage power supply circuit, busbar voltage is converted to after processing for inside
The level that circuit uses.Traditional method be by after the activated resistance current limliting of busbar voltage by clamp diode pressure stabilizing, then by core
Required level is obtained after modulation circuit processing inside piece.This method power pins are essential, but also need to open
The peripheral components such as dynamic resistance, feedback resistance, clamp diode and electric capacity of voltage regulation, system cost is high, and volume is big.
Traditional high-voltage power supply circuit is as shown in Figure 1, AC-input voltage is formed after bridge heap rectifies and capacitor C1 is filtered
Busbar voltage is charged for capacitor C2 after the activated resistance Rstart current limliting of busbar voltage, and VCC voltage is gradually increasing, final to stablize
In the pressure stabilizing value of clamp diode D1.Since VCC voltage is influenced by factors such as technique, temperature, precision is lower, therefore VCC voltage
Accurately internal level VDD need to be generated after inner modulation circuit Regulator modulation, supplied for other modules of chip interior
Electricity.
For the high-voltage power supply circuit due to using high voltage startup resistance, internal circuit need to integrate clamp diode, and need to adjust
Circuit processed, therefore circuit is complex, chip VCC pin is also essential, system cost height, and volume is big.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of high pressure self-powered circuits, use
In solving the problems, such as that circuit is complex in the prior art, system cost is high, bulky.
To achieve the above object, the present invention provides a kind of high pressure self-powered circuit, and the high pressure self-powered circuit includes:
JFET adjusts pipe, current-limiting resistance, first switch tube, second switch, electric capacity of voltage regulation, control circuit and power MOS pipe,
In: the grid and Substrate ground of JFET adjustment pipe, drain electrode connect the second pole of power MOS pipe, and source electrode connects the of current-limiting resistance
Second pole of one end and second switch；Second pole of the second termination first switch tube of the current-limiting resistance and second switch
Grid；The grid of the first switch tube is controlled by control circuit, the first pole and Substrate ground；The of the second switch
One pole and substrate are to connect vdd voltage, and connect the first pole plate of electric capacity of voltage regulation；Second pole plate of the electric capacity of voltage regulation is grounded；It is described
Control circuit is powered by VDD, and is modulated by system loop, and the first output end is used to control the working condition of power MOS pipe, together
Shi Suoshu control circuit detects vdd voltage value, and second output terminal is used to control the working condition of first switch tube；The power
The grid of metal-oxide-semiconductor connects the first output end of the control circuit, and the second pole is connected with the drain electrode of JFET adjustment pipe, the first pole
And Substrate ground.
As a kind of preferred embodiment of high pressure self-powered circuit of the invention, the second pole of the power MOS pipe is as core
Piece output port, the external inductance of piece and Schottky diode, while the power input as self-powered circuit.
As a kind of preferred embodiment of high pressure self-powered circuit of the invention, the first switch tube, second switch are
NMOS tube, the first extremely source electrode, second extremely drains.
As a kind of preferred embodiment of high pressure self-powered circuit of the invention, the power MOS pipe is power NMOS tube,
First extremely source electrode, second extremely drains.
It further include current limliting detection resistance and Current limited Control as a kind of preferred embodiment of high pressure self-powered circuit of the invention
Pipe, in which: the first end of the current limliting detection resistance is connected with the grid of the first pole of second switch, Current limited Control pipe, the
Two ends are connected with vdd voltage；The second end of second pole of the Current limited Control pipe and current-limiting resistance, second switch grid and
The second of first switch tube is extremely connected, and grid is connected with the second end of the first pole of second switch and current limliting detection resistance, the
One pole and substrate are connected with vdd voltage.
Further, the Current limited Control pipe is NMOS tube, and the first extremely source electrode, second extremely drains.
As described above, high pressure self-powered circuit of the invention, has the advantages that and traditional high-voltage power supply circuit
It compares, present invention employs a kind of high pressure self-powered circuit structure, chip eliminates VCC energization pins, and peripheral circuit is more smart
Letter saves high voltage startup resistance and electric capacity of voltage regulation, and system cost is low, small in size.Eliminated inside circuit clamp diode and
Modulation circuit, circuit structure is simple, and high reliablity, chip area substantially reduces, and chip cost and system cost substantially reduce.Into
One step, the high pressure self-powered circuit with current limiting function, charging current is restricted in system establishment process, current value energy
It enough keeps constant, vdd voltage linear rise, effectively prevents that overshoot phenomenon and electric current in power up are excessive to cause device
Damage.
Detailed description of the invention
Fig. 1 is shown as a kind of electrical block diagram of high-voltage power supply circuit in the prior art.
Fig. 2 is shown as the electrical block diagram of high pressure self-powered circuit of the invention.
Fig. 3 is shown as the timing diagram of high pressure self-powered circuit of the invention.
Fig. 4 is shown as the electrical block diagram of the high pressure self-powered circuit of the invention with current-limiting function.
Fig. 5 is shown as no current limliting of the invention and the voltage and current timing diagram with current limliting high pressure self-powered circuit.
Component label instructions
J1 JFET adjustment pipe
R1 current-limiting resistance
NM1 first switch tube
NM2 second switch
C3 electric capacity of voltage regulation
Control control circuit
NM0 power MOS pipe
R2 current limliting detection resistance
NM3 Current limited Control pipe
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 2~Fig. 5.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment 1
As shown in Fig. 2, the high pressure self-powered circuit includes: JFET the present embodiment provides a kind of high pressure self-powered circuit
Adjust pipe J1, current-limiting resistance R1, first switch tube NM1, second switch NM2, electric capacity of voltage regulation C3, control circuit Control, with
And power MOS pipe NM0, in which: the grid and Substrate ground of the JFET adjustment pipe J1, drain electrode connect the second of power MOS pipe NM0
Pole, source electrode connect the first end of current-limiting resistance R1 and the second pole of second switch NM2；The second termination the of the current-limiting resistance R1
The second pole of one switching tube NM1 and the grid of second switch NM2；The grid of the first switch tube NM1 is by control circuit
Control control, the first pole and Substrate ground；The first pole of the second switch NM2 and substrate are to connect vdd voltage, and connect
The first pole plate of electric capacity of voltage regulation C3；The second pole plate of the electric capacity of voltage regulation C3 is grounded；The control circuit Control is supplied by VDD
Electricity, and modulated by system loop, the first output end is used to control the working condition of power MOS pipe NM0, while control electricity
Road Control detects vdd voltage value, and second output terminal is used to control the working condition of first switch tube NM1；The power
The grid of metal-oxide-semiconductor NM0 connects the first output end of the control circuit Control, the drain electrode of the second pole and JFET adjustment pipe J1
Be connected, the first pole and Substrate ground, the second pole of the power MOS pipe NM0 as chip output mouth, the external inductance of piece and
Schottky diode, while the power input as self-powered circuit.
In the present embodiment, the first switch tube NM1, second switch NM2 are NMOS tube, the first extremely source electrode,
Second extremely drains, and the power MOS pipe NM0 is power NMOS tube, and the first extremely source electrode, second extremely drains.
Specifically, as shown in Fig. 2, the high pressure self-powered circuit includes:
The JFET adjustment pipe being made of JFET device J1, grid and substrate electric potential are GND, and drain electrode meets power MOS pipe NM0
Drain electrode SW, source electrode connects the drain electrode of current-limiting resistance R1 and second switch NM2；
The current-limiting resistance being made of R1, the drain electrode of the source electrode and second switch NM2 of a termination JFET adjustment pipe J1 are another
Terminate drain electrode and the grid of NM2 of first switch tube NM1；
The first switch tube being made of NM1, grid are controlled by control circuit Control, and drain electrode meets current-limiting resistance R1 and D
The grid of second switch NM2, source electrode and Substrate ground GND；
The second switch being made of NM2, grid connect the drain electrode of current-limiting resistance R1 and first switch tube NM1, and drain electrode connects limit
The leakage resistance R1 other end and JFET adjust pipe J1 source electrode, and source electrode and substrate are vdd voltage, and connect the top crown of electric capacity of voltage regulation C3；
The electric capacity of voltage regulation being made of C3, top crown VDD connect the source electrode and substrate of second switch NM2, bottom crown ground connection
GND；
It by the control circuit of Control module composition, is powered by VDD, is modulated by system loop, the first output end DRV
For controlling the working condition of power MOS pipe NM0, while Control module detects vdd voltage value, second output terminal VDD_
OK is used to control the working condition of first switch tube NM1；
The power MOS pipe NM0 being made of NM0, grid are controlled by the first output end DRV of control circuit Control, leakage
The extremely end chip SW, the external inductance of piece and Schottky diode, while the power input as self-powered circuit, with JFET tune
Homogeneous tube J1 drain electrode is connected, source electrode and Substrate ground GND.
Generally speaking, the high pressure self-powered circuit of the present embodiment is mainly opened by JFET adjustment pipe J1, current-limiting resistance R1, first
Pipe NM1, second switch NM2, electric capacity of voltage regulation C3, control circuit Control and power MOS pipe NM0 are closed, by power MOS pipe
Drain the power supply of the end SW, is controlled by control module Control output end VDD_OK, the vdd voltage of generation is through filter capacitor C3 pressure stabilizing
After export, be other module for power supply of chip interior.The end SW voltage is that busbar voltage access chip after LED and inductance decompression obtains
It arrives, and is modulated by power MOS pipe NM0.
The high pressure self-powered circuit working principle and embodiment of the present embodiment circuit diagram as shown in connection with fig. 2 and Fig. 3 institute
Show that timing diagram is described in detail.
T0 moment, chip power on, and start to start, and internal level VDD is 0V at this time, since Control module is supplied by VDD
Electricity, therefore its output signal DRV and VDD_OK is 0V at this time, power MOS pipe NM0 and first switch tube NM1 are turned off at this time.
Busbar voltage end access chip SW after LED and inductance L1 decompression, power supply and JFET the adjustment pipe J1 leakage as self-powered circuit
Extremely it is connected.Since power MOS pipe NM0 is turned off, the end SW is high level at this time.Since first switch tube NM1 is turned off, second is opened
It closes pipe NM2 grid and drain electrode is connected with voltage regulation resistance R1, current potential is equal, therefore second switch NM2 conducting, due to VDD at this time
Voltage is 0V, therefore JFET adjustment pipe J1 source voltage is low level, and JFET adjusts pipe J1 conducting.SW is adjusted by JFET and is managed
J1, second switch NM2 are electric capacity of voltage regulation C3 charging, and VDD current potential gradually rises, and only reach setting value.
T1 moment, VDD reach setting value, and chip starts to work normally.When Control module detects that VDD reaches setting
Output signal VDD_OK overturning is high level after value, and first switch tube NM1 is connected at this time, by the grid electricity of second switch NM2
Pressure pulls down to GND, therefore second switch NM2 is turned off.SW can not adjust pipe J1 and second switch NM2 by JFET again at this time
For electric capacity of voltage regulation C3 charging, vdd voltage is maintained by the charge that electric capacity of voltage regulation C3 is stored, due to chip interior module quiescent current
Consumption, vdd voltage are gradually reduced.After chip starts normal work, Control module can detect SW voltage and inductance electricity
Stream controls power tube by DRV signal after system loop is modulated and is in alternate conduction off state, and then realizes LED current
Current constant control.
At the T2 moment, VDD level drops to setting value lower limit, and after Control module detects, output signal VDD_OK is turned over
Switch to low level, first switch tube NM1 shutdown, second switch NM2 grid is connected with drain electrode by current-limiting resistance R1, current potential phase
Deng, therefore second switch NM2 is connected, SW adjusts pipe J1, second switch NM2 by JFET and charges for electric capacity of voltage regulation C3, VDD
Current potential gradually rises, until reaching setting value.
T3 moment, VDD reach setting value, and the high pressure self-powered circuit working condition is identical as the T1 moment, therefore system is steady
After fixed, circuit working state and mode are recycled in T1 to T3 moment.
It after chip starts normal work, is modulated by system loop, DRV signal can control the shutdown of power tube alternate conduction.
When DRV is high level, power MOS pipe NM0 is connected, and SW current potential is 0V at this time；When DRV is low level, power MOS pipe NM0 is closed
Disconnected, SW is high level at this time, has charging ability.Therefore Control inside modules logic setting, only when DRV signal is low
When level, detect that VDD level drops to after setting value lower limit, VDD_OK signal can just overturn as low level.
The above is a kind of novel high pressure self-powered circuit structure and method of the present invention, passes through power
Pipe drains SW as circuit power supply, and chip eliminates VCC energization pins, therefore peripheral circuit is more simplified, and saves high voltage startup
Resistance and electric capacity of voltage regulation, system cost is low, small in size.Due to, as adjustment pipe, eliminating clamper two using JFET inside circuit
Pole pipe and modulation circuit, circuit structure is simple, high reliablity, and chip area substantially reduces, and chip cost and system cost are big
It is big to reduce.
Embodiment 2
As shown in figure 4, the present embodiment provides a kind of high pressure self-powered circuit with current-limiting function, basic structure is as implemented
Example 1, wherein the high pressure self-powered circuit with current-limiting function of the present embodiment further includes current limliting detection resistance R2 and Current limited Control pipe
The first end of NM3, the current limliting detection resistance R2 and the first pole of second switch NM2, the grid phase of Current limited Control pipe NM3
Even, second end is connected with vdd voltage；The second pole of the Current limited Control pipe NM3 and second end, the second switch of current-limiting resistance R1
The grid of pipe NM2 is extremely connected with the second of first switch tube NM1, and the first pole and current limliting of grid and second switch NM2 are detected
The second end of resistance R2 is connected, and the first pole and substrate are connected with vdd voltage.In the present embodiment, the Current limited Control pipe NM3 is
NMOS tube, the first extremely source electrode, second extremely drains.
Specifically, in traditional power supply circuit, since system peripherals have used start-up resistor, what is charged for electric capacity of voltage regulation
The effect of current limliting is also played simultaneously.In the circuit structure shown in the present invention, due to saving high voltage startup resistance, internal electricity
In flat VDD uphill process, the charging current of electric capacity of voltage regulation C3 can carry out current limliting by other methods, i.e., in above-mentioned high pressure self-powered
The high pressure self-powered circuit structure with current limiting function is derived on the basis of circuit structure, circuit diagram is as shown in figure 4, wherein
Include:
Increase the current limliting detection resistance being made of R2, one end and second switch NM2 on the basis of high pressure self-powered circuit
Source electrode, Current limited Control pipe NM3 grid are connected, and the other end is vdd terminal, and
The Current limited Control pipe being made of NM3, drain electrode are opened with current-limiting resistance R1, the grid of second switch NM2 and first
The drain electrode for closing pipe NM1 is connected, and grid is connected with the source electrode of NM2 and current limliting detection resistance R2, and source electrode and substrate are vdd terminal.
The high pressure self-powered circuit working principle with current-limiting function and vdd voltage control mode and embodiment of the present embodiment
1 is similar, below with reference to circuit diagram shown in Fig. 4 and no current-limiting function shown in fig. 5 and two kinds of circuits with current limiting function in work
Vdd voltage electric current timing diagram during work, emphasis illustrate the circuit operation principle and control method of current-limiting function.
The high pressure self-powered circuit without current-limiting function in embodiment 1 vdd voltage during the work time and charging current
IVDD changes over time waveform diagram as shown in VDD1 and IVDD1 in Fig. 5:
The T0 moment is chip initial state, and chip not yet works at this time, and vdd voltage zero, charging current IVDD is zero.
T1 moment, chip are started to work, and vdd voltage starts to increase, and concrete operating principle is as described in Example 1, no longer superfluous
It states.At this time since vdd voltage is lower, JFET adjustment pipe J1 source voltage is lower, and IVDD charging current is very big at this time, vdd voltage
Rise quick.As vdd voltage gradually rises, JFET adjustment pipe J1 source voltage gradually rise, charging current IVDD gradually under
Drop.The vdd voltage rate of rise is gradually reduced at this time.
T2 moment, vdd voltage reach setting value, and second switch NM2 is turned off later, and charging current IVDD is reduced to zero.?
In vdd voltage uphill process, charging current IVDD is increased with vdd voltage and is reduced, and is adjusted by second switch NM2 and JFET
Pipe J1 technique and equipment parameters affect, but due to there is no current-limiting circuit, specific current value is difficult to control.
The high pressure self-powered circuit with current-limiting function of the present embodiment vdd voltage during the work time and charging current
IVDD changes over time waveform diagram as shown in VDD2 and IVDD2 in Fig. 5:
The T0 moment is chip initial state, and chip not yet works at this time, and vdd voltage zero, charging current IVDD is zero.
T1 moment, chip are started to work, and control signal VDD_OK overturning is low level, at this time since charging current IVDD is
Pressure drop on zero, current limliting detection resistance R2 is zero, and Current limited Control pipe NM3 shutdown, the grid voltage of second switch NM2 is by current limliting
Resistance R1 is drawn high, and second switch NM2 conducting, charging current IVDD increases, and is started as electric capacity of voltage regulation C3 charging, vdd voltage
It gradually rises.As charging current IVDD increases, the pressure drop on current limliting detection resistance R2 is gradually increased, i.e. Current limited Control pipe NM3
Gate source voltage increase.After charging current IVDD increases to a certain current value, the pressure drop on current limliting detection resistance R2 be will lead to
Current limited Control pipe NM3 conducting, and second switch NM2 grid voltage is dragged down, the gate source voltage of second switch NM2 reduces,
Charging current no longer increases, and IVDD electric current at this time is the cut-off current of charging current.Current-limiting resistance R1, current limliting in circuit at this time
Detection resistance R2, second switch NM2 and Current limited Control pipe NM3 constitute negative-feedback circuit, and it is steady that system loop controls charging current
It is scheduled on cut-off current, and VDD electric capacity of voltage regulation C3 charging is continuously with this electric current, vdd voltage linearly increases.The current limliting of charging current
Value is determined by the gate source voltage of Current limited Control pipe NM3 and the resistance value of current limliting detection resistance R2, it may be assumed that
IVDD=VGS_NM3/ R2,
It follows that adjusting the resistance value of current limliting detection resistance R2, the cut-off current of charging current can be easily set.
T3 moment, vdd voltage reach setting value, and control signal VDD_OK overturning is high level, first switch tube NM1 conducting
And drag down second switch NM2 grid voltage, second switch NM2 shutdown, charging current IVDD is reduced to zero.
In the circuit, since charging current is restricted in vdd voltage establishment process, charging current is able to maintain perseverance
Fixed, vdd voltage linear rise effectively prevents the overshoot phenomenon and the excessive damage caused by device of electric current in power up.
As described above, the present invention provides a kind of high pressure self-powered circuit, the high pressure self-powered circuit includes: JFET adjustment
Pipe J1, current-limiting resistance R1, first switch tube NM1, second switch NM2, electric capacity of voltage regulation C3, control circuit Control, Yi Jigong
Rate metal-oxide-semiconductor NM0, in which: the grid and Substrate ground of the JFET adjustment pipe J1, drain electrode connect the second pole of power MOS pipe NM0,
Source electrode connects the first end of current-limiting resistance R1 and the second pole of second switch NM2；The second termination first of the current-limiting resistance R1
The second pole of switching tube NM1 and the grid of second switch NM2；The grid of the first switch tube NM1 is by control circuit
Control control, the first pole and Substrate ground；The first pole of the second switch NM2 and substrate are to connect vdd voltage, and connect
The first pole plate of electric capacity of voltage regulation C3；The second pole plate of the electric capacity of voltage regulation C3 is grounded；The control circuit Control is supplied by VDD
Electricity, and modulated by system loop, the first output end is used to control the working condition of power MOS pipe NM0, while control electricity
Road Control detects vdd voltage value, and second output terminal is used to control the working condition of first switch tube NM1；The power
The grid of metal-oxide-semiconductor NM0 connects the first output end of the control circuit Control, the drain electrode of the second pole and JFET adjustment pipe J1
Be connected, the first pole and Substrate ground, the second pole of the power MOS pipe NM0 as chip output mouth, the external inductance of piece and
Schottky diode, while the power input as self-powered circuit.The present invention adopts compared with traditional high-voltage power supply circuit
VCC energization pins are eliminated with a kind of novel high pressure self-powered circuit structure and method, chip, peripheral circuit is more smart
Letter saves high voltage startup resistance and electric capacity of voltage regulation, and system cost is low, small in size.Eliminated inside circuit clamp diode and
Modulation circuit, circuit structure is simple, and high reliablity, chip area substantially reduces, and chip cost and system cost substantially reduce.Into
One step, the high pressure self-powered circuit with current limiting function, charging current is restricted in system establishment process, current value energy
It enough keeps constant, vdd voltage linear rise, effectively prevents that overshoot phenomenon and electric current in power up are excessive to cause device
Damage.So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (5)
1. a kind of high pressure self-powered circuit, which is characterized in that the high pressure self-powered circuit includes: JFET adjustment pipe, current limliting electricity
Resistance, first switch tube, second switch, electric capacity of voltage regulation, control circuit, power MOS pipe, current limliting detection resistance and Current limited Control
Pipe, in which:
The grid and Substrate ground of JFET adjustment pipe, drain electrode connect the second pole of power MOS pipe, and source electrode connects the of current-limiting resistance
Second pole of one end, the second pole of second switch and first switch tube；Second termination Current limited Control of the current-limiting resistance
Second pole of pipe and the grid of second switch；The grid of the first switch tube is controlled by control circuit, the first pole and substrate
Ground connection；First pole of the second switch and substrate connect the first end of current limliting detection resistance and the grid of Current limited Control pipe；Institute
The first pole and substrate for stating Current limited Control pipe connect the first pole of the second end of current limliting detection resistance, vdd voltage and electric capacity of voltage regulation
Plate；Second pole plate of the electric capacity of voltage regulation is grounded；The control circuit is powered by VDD, and is modulated by system loop, and first is defeated
Outlet is used to control the working condition of power MOS pipe, while the control circuit detects vdd voltage value, and second output terminal is used
In the working condition of control first switch tube；The grid of the power MOS pipe connects the first output end of the control circuit, the
Two poles are connected with the drain electrode of JFET adjustment pipe, the first pole and Substrate ground.
2. high pressure self-powered circuit according to claim 1, it is characterised in that: the second pole conduct of the power MOS pipe
Chip output mouth, the external inductance of piece and Schottky diode, while the power input as self-powered circuit.
3. high pressure self-powered circuit according to claim 1, it is characterised in that: the first switch tube, second switch
For NMOS tube, the first extremely source electrode, second extremely drains.
4. high pressure self-powered circuit according to claim 1, it is characterised in that: the power MOS pipe is power NMOS tube,
Its first extremely source electrode, second extremely drains.
5. high pressure self-powered circuit according to claim 1, it is characterised in that: the Current limited Control pipe is NMOS tube,
First extremely source electrode, second extremely drains.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108347181B (en) * | 2017-01-25 | 2020-02-07 | 芯好半导体(成都)有限公司 | Power supply conversion device |
| CN109428474B (en) * | 2017-08-24 | 2021-03-23 | 通嘉科技股份有限公司 | High-voltage starting circuit and high-voltage charging control method |
| CN109922559B (en) * | 2017-12-13 | 2021-04-27 | 华润微集成电路(无锡)有限公司 | Constant-current control module, non-isolated step-down circuit and constant-current control method |
| CN108233686B (en) * | 2018-03-09 | 2024-08-06 | 深圳深爱半导体股份有限公司 | Power management integrated circuit integrated with power switch tube and power management device |
| CN108282096A (en) * | 2018-04-04 | 2018-07-13 | 深圳市必易微电子有限公司 | No auxiliary winding primary side feedback constant pressure and flow device and control chip |
| CN112886837B (en) * | 2021-03-03 | 2022-08-30 | 昂宝电子（上海）有限公司 | Switching power supply and control chip thereof |
| CN116232040B (en) * | 2023-05-09 | 2023-12-12 | 苏州力生美半导体有限公司 | Switching power supply and control circuit thereof |
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| CN106329959A (en) | 2017-01-11 |
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Effective date of registration: 20210107 Address after: 214135 -6, Linghu Avenue, Wuxi Taihu international science and Technology Park, Wuxi, Jiangsu, China, 180 Patentee after: China Resources micro integrated circuit (Wuxi) Co., Ltd Address before: 9-10 / F, building 4 (i.e. building a), 100 Zixiu Road, Minhang District, Shanghai, 201103 Patentee before: CHINA RESOURCES POWTECH (SHANGHAI) Co.,Ltd. |