CN106316407A - Preparation technology of high-hardness substrate for LED - Google Patents
Preparation technology of high-hardness substrate for LED Download PDFInfo
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- CN106316407A CN106316407A CN201610654596.6A CN201610654596A CN106316407A CN 106316407 A CN106316407 A CN 106316407A CN 201610654596 A CN201610654596 A CN 201610654596A CN 106316407 A CN106316407 A CN 106316407A
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- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000005516 engineering process Methods 0.000 title claims abstract description 16
- 238000005245 sintering Methods 0.000 claims abstract description 21
- 239000002002 slurry Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000000465 moulding Methods 0.000 claims abstract description 5
- 239000000843 powder Substances 0.000 claims description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 6
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 claims description 4
- 238000000498 ball milling Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- FPAFDBFIGPHWGO-UHFFFAOYSA-N dioxosilane;oxomagnesium;hydrate Chemical compound O.[Mg]=O.[Mg]=O.[Mg]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O FPAFDBFIGPHWGO-UHFFFAOYSA-N 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 238000007731 hot pressing Methods 0.000 claims description 4
- 239000011268 mixed slurry Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 239000010456 wollastonite Substances 0.000 claims description 4
- 229910052882 wollastonite Inorganic materials 0.000 claims description 4
- 229920000180 alkyd Polymers 0.000 claims 1
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 4
- 238000010304 firing Methods 0.000 abstract description 2
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 239000012071 phase Substances 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract 1
- 238000000280 densification Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
- C04B35/6306—Binders based on phosphoric acids or phosphates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3427—Silicates other than clay, e.g. water glass
- C04B2235/3436—Alkaline earth metal silicates, e.g. barium silicate
- C04B2235/3454—Calcium silicates, e.g. wollastonite
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/447—Phosphates or phosphites, e.g. orthophosphate or hypophosphite
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/449—Organic acids, e.g. EDTA, citrate, acetate, oxalate
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- Compositions Of Oxide Ceramics (AREA)
- Ceramic Products (AREA)
Abstract
The invention relates to a preparation technology of a high-hardness substrate for an LED. The technology comprises the steps of 1 preparing of a composite sintering aid, 2 preparing of slurry and 3 molding. The preparation technology has the following advantages that by adopting an appropriate sintering method and selecting the appropriate sintering aid, compactness of a sintered body is achieved, and the heat conductivity of the substrate is greatly improved; the sintering aid can form a low-melting-point phase, achieve liquid-phase sintering, lower the firing temperature, promote compactness of a green body and improve the hardness and glossiness of the substrate surface; the substrate is high in heat conductivity coefficient, excellent in heat resistance, high in bending strength and capable of avoiding the phenomena such as bending and warping.
Description
Technical field
The invention belongs to LED matrix technique field, be specifically related to the preparation technology of a kind of LED high rigidity substrate.
Background technology
LED mainly include LED chip and Lamp cup, usual LED chip be with LED luminescent wafer with beat gold thread, eutectic or
The mode of flip is connected on heat-radiating substrate formation, then LED chip is fixed on the circuit board of system, and heat-radiating substrate is played the part of
Heat radiation, conduct electricity, insulate triple role, existing heat-radiating substrate is mainly metal basal board, but this kind of metal basal board connects LED
The technology of luminescent wafer also exists the drawback of poor radiation, poor insulativity.
Along with the demand of LED illumination is increasingly urgent, the heat dissipation problem of great power LED comes into one's own (too high temperature increasingly
LED luminous efficiency can be caused to decay)；If LED uses produced used heat effectively to shed, then the life-span of LED can be caused
Fatefulue impact.Present stage more universal heat-radiating substrate has 4 kinds: directly copper-clad plate (DBC), direct copper plating substrate (DPC), high
Temperature burns multilager base plate (HTCC) and low temperature co-fired multilager base plate (LTCC) altogether.There is cost restriction, insulating properties in actual use
Can wait shortcoming not, its manufacturing cost is higher, and heat dispersion is poor, and moisture resistance, corrosion resistance are bad, causes the use longevity of LED
Order shorter, it is impossible to foot market demand, the formula of the most necessary improvement material, design the LED-baseplate of a kind of superior performance.
Summary of the invention
The present invention is directed to the problem of the existence in background technology and the LED high rigidity substrate of a kind of perfect heat-dissipating is provided
Preparation technology.
The technical scheme used to realize the object of the invention is: the preparation technology of a kind of LED high rigidity substrate, tool
Preparation step is as follows:
1) preparation of complex sintering aids
By alumina powder 65～75 parts, zinc powder 5～10 parts, kieselguhr 15～20 parts, Pulvis Talci 5～10 parts, calcium fluoride 15
～20 parts be scattered in dehydrated alcohol formation mixed slurry, the most i.e. prepare complex sintering aids, wherein, described alumina powder
It is 1g:5mL with the mass volume ratio of dehydrated alcohol；
2) preparation of slurry
It is sequentially added into silicon nitride powder, sodium hypophosphite 3～6 parts, wollastonite in powder 3～6 parts, the aluminum phosphate 3～5 of 50～60 parts
Part, glycolic 6～10 parts and step 1) complex sintering aids 6 for preparing～10 parts carry out wet ball grinding, ball milling 3～5 hours, enter
Row vacuum stirring de-bubble, prepares slurry；
3) molding
By step 2) prepare slurry press-in die in, naturally placed gel process；Take out blank at 70～80 DEG C
In temperature, it is dried process 3～5 hours；It is then placed in hot pressing die being sintered compacting, is 1200～1400 in temperature
It is incubated 1～2 hour at DEG C, continues to improve temperature and be incubated 1～2 hour to 1400 DEG C～1700 DEG C, then cooling down obtains base
Plate.
Beneficial effects of the present invention is as follows:
The present invention is by using suitable sintering method and choosing suitable sintering aid, it is achieved that the densification of sintered body
Change, substantially increase the thermal conductivity of substrate；The sintering aid of the present invention can form the thing phase of low melting point, it is achieved liquid-phase sintering, fall
Low firing temperature, promotes the densification of base substrate, adds hardness and the glossiness of substrate surface；The substrate heat conductivity of the present invention
Greatly, heat resistance is excellent, and bending strength is high, it is to avoid the phenomenons such as bending, warpage occur.
Detailed description of the invention
Below in conjunction with embodiment, the invention will be further described.
Embodiment 1:
The preparation technology of the embodiment of the present invention a kind of LED high rigidity substrate, concrete preparation process is as follows:
1) preparation of complex sintering aids
Alumina powder 65 parts, zinc powder 5 parts, 15 parts of kieselguhr, Pulvis Talci 5 parts, 15 parts of calcium fluoride are scattered in dehydrated alcohol
Middle formation mixed slurry, the most i.e. prepares complex sintering aids, wherein, described alumina powder and the quality volume of dehydrated alcohol
Ratio is 1g:5mL；
2) preparation of slurry
Be sequentially added into 50 parts silicon nitride powder, sodium hypophosphite 3 parts, wollastonite in powder 3 parts, aluminum phosphate 3 parts, glycolic 6 parts and
Step 1) prepare complex sintering aids 6 parts carry out wet ball grinding, ball milling 3 hours, carry out vacuum stirring de-bubble, prepare slurry；
3) molding
By step 2) prepare slurry press-in die in, naturally placed gel process；Take out blank at 70～80 DEG C
In temperature, it is dried process 3 hours；It is then placed in hot pressing die being sintered compacting, is 1200～1400 DEG C in temperature
Lower insulation 1 hour, continues to improve temperature and is incubated 1 hour to 1400 DEG C～1700 DEG C, then cooling down obtains substrate.
Embodiment 2:
The preparation technology of the embodiment of the present invention a kind of LED high rigidity substrate, concrete preparation process is as follows:
1) preparation of complex sintering aids
Alumina powder 75 parts, zinc powder 10 parts, 20 parts of kieselguhr, Pulvis Talci 10 parts, 20 parts of calcium fluoride are scattered in anhydrous second
Alcohol is formed mixed slurry, the most i.e. prepares complex sintering aids, wherein, described alumina powder and the mass body of dehydrated alcohol
Long-pending ratio is 1g:5mL；
2) preparation of slurry
Be sequentially added into 60 parts silicon nitride powder, sodium hypophosphite 6 parts, wollastonite in powder 6 parts, aluminum phosphate 5 parts, glycolic 10 parts and
Step 1) prepare complex sintering aids 10 parts carry out wet ball grinding, ball milling 5 hours, carry out vacuum stirring de-bubble, prepare slurry；
3) molding
By step 2) prepare slurry press-in die in, naturally placed gel process；Take out blank at 70～80 DEG C
In temperature, it is dried process 5 hours；It is then placed in hot pressing die being sintered compacting, is 1200～1400 DEG C in temperature
Lower insulation 2 hours, continues to improve temperature and is incubated 2 hours to 1400 DEG C～1700 DEG C, then cooling down obtains substrate.
The foregoing is only embodiments of the invention, not thereby limit the scope of the claims of the present invention, every utilize this
Equivalent structure or equivalence flow process that bright description is made convert, or are directly or indirectly used in other relevant technology necks
Territory, is the most in like manner included in the scope of patent protection of the present invention.
Claims (1)
1. the LED preparation technology of high rigidity substrate, it is characterised in that concrete preparation technology is as follows:
1) preparation of complex sintering aids
By alumina powder 65～75 parts, zinc powder 5～10 parts, kieselguhr 15～20 parts, Pulvis Talci 5～10 parts, calcium fluoride 15～20
Part is scattered in dehydrated alcohol formation mixed slurry, the most i.e. prepares complex sintering aids, wherein, described alumina powder and nothing
The mass volume ratio of water-ethanol is 1g:5mL；
2) preparation of slurry
It is sequentially added into silicon nitride powder, sodium hypophosphite 3～6 parts, wollastonite in powder 3～6 parts, aluminum phosphate 3～5 parts, the second of 50～60 parts
Alkyd 6～10 parts and step 1) complex sintering aids 6 for preparing～10 parts carry out wet ball grinding, ball milling 3～5 hours, carry out true
Empty stirring de-bubble, prepares slurry；
3) molding
By step 2) prepare slurry press-in die in, naturally placed gel process；Take out blank 70～80 DEG C of temperature
In, it is dried process 3～5 hours；It is then placed in hot pressing die being sintered compacting, at temperature is 1200～1400 DEG C
It is incubated 1～2 hour, continues to improve temperature and be incubated 1～2 hour to 1400 DEG C～1700 DEG C, then cooling down obtains substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610654596.6A CN106316407A (en) | 2016-08-11 | 2016-08-11 | Preparation technology of high-hardness substrate for LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610654596.6A CN106316407A (en) | 2016-08-11 | 2016-08-11 | Preparation technology of high-hardness substrate for LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106316407A true CN106316407A (en) | 2017-01-11 |
Family
ID=57740261
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610654596.6A Withdrawn CN106316407A (en) | 2016-08-11 | 2016-08-11 | Preparation technology of high-hardness substrate for LED |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112552055A (en) * | 2021-01-14 | 2021-03-26 | 威海圆环先进陶瓷股份有限公司 | Method for high-temperature co-firing of metal and silicon nitride ceramic composite substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101260488A (en) * | 2008-04-18 | 2008-09-10 | 哈尔滨工业大学 | A kind of silicon nitride ceramic particle reinforced aluminum matrix composite material and preparation method thereof |
| CN102795841A (en) * | 2011-05-24 | 2012-11-28 | 比亚迪股份有限公司 | Alumina-based ceramic, ceramic radiating substrate and preparation method for ceramic radiating substrate |
| CN105254308A (en) * | 2015-11-04 | 2016-01-20 | 苏州知瑞光电材料科技有限公司 | Preparation method of ceramic cooling composite material |
| CN105272176A (en) * | 2015-11-04 | 2016-01-27 | 苏州知瑞光电材料科技有限公司 | High-power LED (Light-Emitting Diode) heat dissipation ceramic substrate |
-
2016
- 2016-08-11 CN CN201610654596.6A patent/CN106316407A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101260488A (en) * | 2008-04-18 | 2008-09-10 | 哈尔滨工业大学 | A kind of silicon nitride ceramic particle reinforced aluminum matrix composite material and preparation method thereof |
| CN102795841A (en) * | 2011-05-24 | 2012-11-28 | 比亚迪股份有限公司 | Alumina-based ceramic, ceramic radiating substrate and preparation method for ceramic radiating substrate |
| CN105254308A (en) * | 2015-11-04 | 2016-01-20 | 苏州知瑞光电材料科技有限公司 | Preparation method of ceramic cooling composite material |
| CN105272176A (en) * | 2015-11-04 | 2016-01-27 | 苏州知瑞光电材料科技有限公司 | High-power LED (Light-Emitting Diode) heat dissipation ceramic substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112552055A (en) * | 2021-01-14 | 2021-03-26 | 威海圆环先进陶瓷股份有限公司 | Method for high-temperature co-firing of metal and silicon nitride ceramic composite substrate |
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